Zur Temperaturabhängigkeit der Elektrolumineszenz von Zinksulfid-Phosphoren

The temperature dependence of brightness waves and of average emission intensity of ZnS powder phosphors excited by square pulses was studied. In certain temperature ranges brightness waves with two peaks in each half-period of the exciting field are observed. Microscopical investigations of individual luminescent areas of a ZnS-grain showed the second peak in the brightness wave to be present in that half-period which in the model of delayed recombination is called the excitation half-period. It is shown that this emission takes place after the excitation process (duration <2μs) is finished and the resulting field in the inner parts of the crystallites has almost faded. Because of this fact and on the basis of glow and built-up investigations in the excitation half-period a spontaneous recombination of electrons thermally released from traps is proposed. Therefore the brightness waves with two peaks, but also emission in the excitation half-period is observed for temperatures at which — in the time average — many traps are still filled but on the other hand the probability for their emptying is already considerable.     

Energy losses in a flashing ratchet with different potential well shapes

A flashing ratchet is considered, which involves periodic two-well potentials fluctuating via random shifts of one half-period. Such a Brownian motor exhibits the maximum efficiency tending to unity, provided one of the barriers blocks the reverse movement of a Brownian particle and the potential wells have the same curvatures and the half-period-shifted minima. Analytical expressions are derived for the energy losses arising from a discrepancy between potential well curvatures and a deviation of the inter-well distance from a half-period. The dependences of the energy losses on the parameters of the model are analyzed.     

输运层势垒对双层结构器件复合发光的影响

通过分析双层结构器件复合发光的实际物理过程，建立了双层器件载流子输运与复合发光的多势垒的理论模型，计算并讨论了器件复合效率随外加电压及输运层势垒（包括势垒高度和宽度）的变化关系，该理论模型较好地解释实验现象。     

Ⅱ-Ⅵ族稀磁半导体多层结构中的自旋极化隧穿

采用转移矩阵法和Airy函数,研究了ZnSe/ZnMnSe/ZnSe/ZnBeSe/ZnSe/ZnBeSe/ZnSe异质结构的自旋极化输运。在外加偏压和磁场对电子透射系数和自旋极化率的影响方面,所得到的结论显现出复杂而有趣的特性。磁场对自旋向上和向下电子隧穿的影响是不同的:对于自旋向上情况,出现双共振向单共振转换现象。     

On the Kinetics of the Active Zone of the Stationary SF6 Beam Discharge Plasma

The paper deals with the impact of intensive electron attachment on the kinetics of the electrons in the active zone of the stationary band-like beam discharge plasma in SF₆ which is an alternative useful plasma medium for “dry etching”. The energy distribution of the electrons in this plasma was obtained by numerically solving the Boltzmann equation which includes apart from elastic collisions, different exciting collision processes, attachment in electron collisions, direct ionization, the ambipolar loss of electrons, Coulomb interaction between electrons and of electrons with ions and the power input to the electrons by the turbulent electric field. In particular, due to the needed fulfilment of the consistent electron particle balance, for an extended region of the turbulence energy density in this plasma a large impact on the electron kinetics of the intensive electron attachment, which is the prevailing electron loss process, was found enforcing independent of the turbulence energy density always a large power input to the electrons, smooth and only slowly decreasing energy distributions even in the energy region of direct ionization.     

掺杂有机电致发光中电压调制变色两种机制的探讨

研究两种掺杂电致发光器件聚乙烯基咔唑（PVK）：Rubrene和Alq3:MN-PPV。通过其光致发光及电致发光特性的研究，发现两种器件的光致发光与电致发光有较大差别。分析认为这是能量传递及电致发光中陷阱对载流子吸引的共同作用使得PVK激子在光致发光和电致发光中的复合速率不同造成的；同时发现对于不同浓度的PVK：Rubrene及Alq3:MN-PPV电致发光随电压增加都发生变色现象，但是它们分别是由两种不同的机制造成的：前者作为染料分子Rubrene，不能形成类似Alq3那样的分相体系，Rubrene发光主要来自PVK的能量传递及陷阱电子对PVK空穴的吸引；后者是由于分相造成载流子在两相中的迁移不平衡。     

Dark currents of GaAs/AlGaAs quantum-well infrared photodetectors

We study the dark current of the GaAs/AlGaAs quantum-well infrared photodetector (QWIP) by assuming a drift-diffusion carrier transport in the barriers where the electric fields are obtained by the current continuity condition and the self-consistent energy band structure. It has been shown that due to the current continuity condition, the dark currents across the QWIP devices are determined by the thermionic emission from the emitter to the multiple quantum well (MQW) region. The self-consistent calculation of the Schrödinger and Poisson equations shows a weak electric field in the barrier region connecting to the emitter (much smaller than the average field across the QWIP at low bias) due to the accumulation of carriers in the triangle quantum well formed at the emitter-MQW interface, which results in a very small dark current at low bias. The numerical results explain well our experimental observation.     

Generation of low energy resonant electrons during relaxation of57Fe

Collection of low energy electrons (<15 eV) duringConversionElectronMossbauerSpectroscopy (CEMS) provides enhanced surface sensitivity. Spectra collected from a 0.928⁵⁷Fe foil using retarding field energy analyzers in conjunction with spiraltron electron multipliers demonstrates both resonant and nonresonant count rates which decrease by as much as 50% at 10 eV bias potential. Spectra from samples with the topmost 1.0 nm chemically labeled had total spectral areas of 99.0%mm/sec. The area ratio of the resonant 1.0 nm overlayer to the resonant substrate was 1.43 at 0 eV bias potential while at 15 eV the ratio decreased to 0.72. By vacuum evaporating a 5.0 nm copper coating on the sample, near complete attenuation of the low energy electrons from the 1.0 nm overlayer was achieved. These results suggest that some low energy electrons below 15 eV are formed as primary products of electronic relaxation following nuclear decay and that they are not the result of straggling or other scattering phenomena.     

Theoretical modeling of excitation and de-excitation processes of Er in SiO2 with Si nanocrystals

We construct the theory of carriers confined in Si quantum dots with finite energy barriers for electrons and holes in the framework of the multiband effective mass theory. We apply this theory for theoretical modeling of the excitation of erbium inside and outside of Si nanocrystals in SiO₂ matrix due to the Auger process induced by the recombination of a confined electron-hole pair as well as the intraband transitions of “hot” confined carriers. Auger de-excitation processes of the Er³⁺ ion leading to the quenching of erbium luminescence are discussed as well.     

Unusual behavior of the electron reflection coefficient of asymmetric double-barrier quantum structures in a finite-amplitude rf field

The time-dependent Schrödinger equation describing the resonance interaction of electrons with a radio-frequency (rf) field is solved for asymmetric resonance-tunneling structures with thin, high barriers. It is found that in a number of cases the resonance reflection coefficient of such structures decreases almost to zero as the amplitude of the rf field increases. The conditions under which the largest number of electrons incident on the structure (in a number of cases 100%) interacts efficiently with an rf field with frequency ω and pass into a neighboring resonance level, emitting or absorbing a quantum of energy ?ω, are determined.     

I–V characterization of a quantum well infrared photodetector with stepped and graded barriers

I–V characterization of an n-type quantum well infrared photodetector which consists of stepped and graded barriers has been done under dark at temperatures between 20–300 K. Different current transport mechanisms and transition between them have been observed at temperature around 47 K. Activation energies of the electrons at various bias voltages have been obtained from the temperature dependent I–V measurements. Activation energy at zero bias has been calculated by extrapolating the bias dependence of the activation energies. Ground state energies and barrier heights of the four different quantum wells have been calculated by using an iterative technique, which depends on experimentally obtained activation energy. Ground state energies also have been calculated with transfer matrix technique and compared with iteration results. Incorporating the effect of high electron density induced electron exchange interaction on ground state energies; more consistent results with theoretical transfer matrix calculations have been obtained.     

针-板DBD微流注与微辉光交替生成的机理研究

在介质阻挡放电体系中产生辉光放电可以有效的提高放电体系产生高能电子的性能, 为等离子体化学反应提供更加丰富的活性粒子.本文对针-板介质阻挡放电体系下的放电模式进行了研究,实验发现放电正负半周期表现出不同的放电模式, 激励电压为3 kV时放电正负半周期分别为微流注放电和电晕放电(或者Trichel脉冲放电),激励电压为6 kV时放电正负半周期分别为微流注放电和微辉光放电.微辉光放电形貌具有与典型辉光放电相同的分层次放电结构, 分析了激励电压6 kV时的放电过程,认为足够强的阴极电场强度和裸露针状电极形成的有效的二次电子发射过程是形成微辉光放电的主要因素,绝缘介质层的存在避免了微辉光放电向弧光放电过渡.     

Energy relaxation of magnetically confined electrons in quantum cascade lasers

By measuring the light emitted from a quantum cascade laser placed in a high magnetic field, we have investigated the energy relaxation of 0D magnetically confined electrons in the active quantum wells of the structure. The experiment consists of injecting electrons by tunnelling into one upper subband level and monitoring a resonant interaction with optical phonons produced by Landau tuning of subband energy levels. For this purpose, the upper level lifetime is probed by measuring the laser intensity as a function of magnetic field, under constant current bias values. Both the laser intensity and the bias voltage oscillate periodically with the reciprocal of the field. In addition, at high magnetic fields, the current threshold goes through deep minima at antiresonance values. The lifetime is then deduced and analyzed using the strong electron–phonon coupling scheme which is typically applied to quantum dots.     

Effect of surface potential on field-emission energy distributions and on the surface density of states

We present numerical results for the total energy distribution of electrons field emitted from the (100) plane of tungsten for two different surface barriers and two different values of the applied field. Numerical results are also presented for the surface density of states.     

Electron energy distribution function and dense-gas ionization in the presence of a strong field

The mechanism for dense-gas ionization is analyzed in the case when the deceleration of electrons by gas can be neglected in the equation of motion of a single electron. An expression for the electron energy distribution function in the presence of a strong field is derived. The characteristic width of the distribution corresponds to the energy acquired by the electron at a length determined by the inverse Townsend coefficient. The electron energy distributions are calculated for various distances form the cathode. It is demonstrated that the distribution becomes independent of the coordinate at a distance from the cathode that is significantly greater than the inverse Townsend coefficient. In this case, the distribution coincides with the distribution obtained with analytical calculations. The absence of the coordinate dependence is realized even in the presence of an extremely strong field when, in accordance with the commonly accepted point of view, the majority of electrons are runaway electrons.     

Excited atoms in argon gas discharge plasma

General principles are discussed for a gas discharge plasma involving excited atoms where electron-atom collision processes dominate. It is shown that an optimal kinetic model of this plasma at not large electric field strengths can be based on the rate constants of quenching excited atom states by electron impact. The self-consistent character of atom excitation in gas discharge plasma is important and results in the tail of the energy distribution function of electrons being affected by the excitation process, which in turn influences the excitation rate. These principles are applied to an argon gas discharge plasma where excitation and ionization processes have a stepwise character and proceed via formation of argon atom states with the electron shell 3p ⁵4s.     

Electroreflectance spectra of Ag(111) electrodes

Electroreflectance (ER) spectra of Ag(111) evaporated electrodes on mica in aqueous electrolytes were measured within the wavelength range of 500 to 200 nm for p- and s-polarized light as a function of the angle of incidence, bias potential and surface roughness. These spectra show structures which were not seen in previously obtained ER spectra on slightly rough, polycrystalline Ag electrodes. The effect of volume and surface plasma excitation on the spectra is clearly indicated. The experimental results cannot be reproduced satisfactorily by any currently employed theoretical model which takes only free electron effects into account. The influence of the electric field on the bound electrons in the surface layer obviously cannot be neglected. It is demonstrated that the surface plasma resonance is shifted in energy by the applied electric field.     

Spin-valley-dependent transport and giant tunneling magnetoresistance in silicene with periodic electromagnetic modulations

The transport property of electrons tunneling through arrays of magnetic and electric barriers is studied in silicene.In the tunneling transmission spectrum, the spin-valley-dependent filtered states can be achieved in an incident energy range which can be controlled by the electric gate voltage. For the parallel magnetization configuration, the transmission is asymmetric with respect to the incident angle θ, and electrons with a very large negative incident angle can always transmit in propagating modes for one of the spin-valley filtered states under a certain electromagnetic condition. But for the antiparallel configuration, the transmission is symmetric about θ and there is no such transmission channel. The difference of the transmission between the two configurations leads to a giant tunneling magnetoresistance(TMR) effect.The TMR can reach to 100% in a certain Fermi energy interval around the electrostatic potential. This energy interval can be adjusted significantly by the magnetic field and/or electric gate voltage. The results obtained may be useful for future valleytronic and spintronic applications, as well as magnetoresistance device based on silicene.     

电子在激光驻波场中运动产生的太赫兹及X射线辐射研究

采用单电子模型和经典辐射理论分别对低能和高能电子在线偏振激光驻波场中的运动和辐射过程进行了研究. 结果表明: 垂直于激光电场方向入射的低速电子在激光驻波场中随着光强的增大, 逐渐从一维近周期运动演变为二维折叠运动, 并产生强的微米量级波长的太赫兹辐射; 高能电子垂直或者平行于激光电场方向入射到激光驻波场中, 都会产生波长在几个纳米的高频辐射; 低能电子与激光驻波场作用中, 激光强度影响着电子的运动形式、辐射频率以及辐射强度; 高能电子入射时, 激光强度影响了电子高频辐射的强度, 电子初始能量影响着辐射的频率; 电子能量越高, 产生的辐射频率越大. 研究表明可以由激光加速电子的方式得到不同能量的电子束, 并利用电子束在激光驻波场的辐射使之成为太赫兹和X射线波段的小型辐射源. 研究结果可以为实验研究和利用激光驻波场中的电子辐射提供依据.