共查询到19条相似文献,搜索用时 140 毫秒
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采用分子动力学方法研究了Pb液滴在Ni(100)晶面、(110)晶面和(111)晶面的铺展润湿行为. 结果表明: Pb液滴在Ni(100)及(111)基底上的润湿铺展现象呈各向同性, 而在Ni(110)基底上的润湿铺展现象呈明显的各向异性, 且这种各向异性源于Ni(110)晶面点阵结构上Pb原子沿不同晶向的扩散机制及速度的明显差异; Pb液滴在Ni(111)晶面上铺展时, 未发生表面合金化, 液滴铺展动力学描述近似满足 R2 ∝ t, 而液滴在(100)晶面和(110)晶面上铺展时表面产生合金化现象, 铺展动力学关系近似满足 R4 ∝ t, 且液滴在(100)晶面上的铺展速度高于(110)晶面上的铺展速度.
关键词:
分子动力学
润湿各向异性
铺展膜
扩散机制 相似文献
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研究并制备了不同晶面偏角的Si(111)单晶,经过研磨和抛光使表面粗糙度低至3.4?达到超光滑水平,消除了表面和亚表面损伤层以及其所产生的应力变化.利用高精度X射线衍射仪分别测定了在不同晶面偏角条件下衍射曲线的半高全宽和积分宽度.应用Voigt函数法分析计算了微观应变,通过理论计算和实验对比可知,Si(111)单晶在晶面偏角达到0.749o时,偏角本身所带来的衍射峰半高全宽变化使计算出的应变值误差大于5%.研究结果为其他晶体类似研究提供了重要参考. 相似文献
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为了研究离子注入对外延磁性薄膜面内磁各向异性的影响,用离子加速器对在有错切角的Si(111)面上外延生长的Fe膜进行了N~+注入实验.随着N~+注入剂量的增加,外延生长的Fe膜的面内磁各向异性逐渐从二重对称改变为六重对称.通过透射电子显微镜和刻蚀实验验证,发现离子辐照改变了Fe膜表面和界面的状态.未辐照Fe膜面内二重磁对称来自于由于Si(111)面的错切使得在薄膜界面和表面处形成的原子台阶.N~+注入的溅射作用使得Fe膜表面的原子台阶被擦除,N~+注入使得缓冲层和Fe膜界面处相互扩散导致界面处原子台阶消失.因此,外延Fe膜在大剂量N~+注入后表现出Fe(111)面诱导的六重磁对称.研究结果对于提高面内磁记录密度有潜在的应用价值. 相似文献
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用透射电子显微镜(TEM)和x射线衍射(XRD)方法对经300℃,2h退火的Ag和Cu自由膜和Si基体上的Ag和Cu附着膜的异常晶粒生长和织构变化进行了实验研究.XRD分析表明:Ag和Cu沉积膜均有(111)和(100)择优取向.但经退火处理后,Ag和Cu自由膜的(111)织构稍有加强.相反,Si基体上的Ag和Cu附着膜的(100)和(110)织构明显加强,同时用TEM在Cu附着膜中观察到了两个(110)和四个(211)取向的异常大晶粒.根据表面能和应变能的各向异性对实验结果进行了分析. 相似文献
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采用高分辨电子能量损失谱对比研究Mo(CO)6在清洁的、预吸附氧的和深度氧化的Si(111)表面上的吸附行为. 吸附Mo(CO)6的C-O伸缩振动模式向低频方向移动,说明Mo(CO)6与清洁Si(111)和SiO2/Si(111)表面发生了不同的相互作用,前者较弱而后者较强. 与SiO2/Si(111)表面的强相互作用可能引起Mo(CO)6部分解离,形成部分分解的羰基钼物种. 相似文献
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利用原位扫描隧道显微镜和低能电子衍射分析了Si的纳米颗粒在Si3N4 /Si(111)和Si3N4 /Si(10 0 )表面生长过程的结构演变 .在生长早期T为 35 0— 10 75K范围内 ,Si在两种衬底表面上都形成高密度的三维纳米团簇 ,这些团簇的大小均在几个纳米范围内 ,并且在高温退火时保持相当稳定的形状而不相互融合 .当生长继续时 ,Si的晶体小面开始显现 .在晶态的Si3N4 (0 0 0 1) /Si(111)表面 ,Si的 (111)小面生长比其他方向优先 ,生长方向与衬底Si(111)方向一致 .最后在大范围内形成以 (111)为主的晶面 .相反 ,在非晶的Si3N4 表面 ,即Si3N4 /Si(10 0 ) ,Si晶体的生长呈现完全随机的方向性 ,低指数面如 (111)和 (10 0 )面共存 ,但它们并不占据主导地位 ,大部分暴露的小面是高指数面如 (113)面 .对表面生长过程进行了探讨并给出了合理的物理解释 相似文献
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本文就纳米复合永磁材料中软磁相被交换硬化问题,从一维模型和三维模拟计算进行了分析研究. 一维和三维各向异性样品研究表明,在相同微结构下,当硬磁相的各向异性降低时,除矫顽力降低外,在磁矩全部反转之前退磁曲线是一样的. 因此,硬磁相各向异性的降低不会导致最大磁能积(BH)max增大和剩磁增加. 对于三维各向同性样品的模拟计算表明,降低硬磁相的各向异性会使剩磁和(BH)max都明显降低. 因此,增强硬磁相的各向异性并增大硬磁相晶粒尺寸是提高
关键词:
纳米复合永磁
矫顽力
剩磁
磁能积 相似文献
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M. Danckwerts E. Savinova B. Pettinger K. Doblhofer 《Applied physics. B, Lasers and optics》2002,74(7-8):635-639
We combine in situ electrochemical second-harmonic generation (SHG) with voltammetry measurements using the hanging meniscus
configuration. This setup is used to investigate the interface between a Ag (111) electrode and an alkaline electrolyte. The
study offers a new in situ insight into the electrochemical processes at the Ag (111) electrode during OH adsorption and subsequent
oxidation. The behavior of SHG isotropic and anisotropic contributions as a function of potential is discussed and related
to the interfacial electric field. Comparison of the results with previous investigations of the Ag underpotential oxidation
in alkaline solutions shows that submonolayer oxidation is followed by bulk oxidation.
Received: 16 October 2001 / Revised version: 26 March 2002 / Published online: 6 June 2002 相似文献
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K. Pedersen T.G. Pedersen T.B. Kristensen P. Morgen 《Applied physics. B, Lasers and optics》1999,68(3):637-640
×):Au-structure prior to film growth leads to increased amplitude in the oscillations indicating improved growth characteristics
compared to the 7×7 substrate. The position of the maxima shifts towards lower coverage and the oscillation period decreases
with increasing pump frequency. This behaviour is an unambiguous signature of quantum well resonances and, hence, clearly
demonstrates that Au deposition on Si(111)(×):Au leads to well-defined quantum well structures with atomically flat interfaces. Furthermore, the rotationally anisotropic
contribution to SHG also shows coverage oscillations as a result of quantum well effects and demonstrates the presence of
structural order.
Received: 12 October 1998 相似文献
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Native oxidation of the Si(111)(1 x 1)H surface causes the appearance and disappearance of second-harmonic generation (SHG) resonances related to specific bonding configurations of Si atoms at the interface. Resonances at 3.52 eV two-photon energy observed in p-polarized SHG spectra are indicative of a Si suboxide configuration present in a partially oxidized Si surface bilayer. Similar resonances are observed in spectra of thermally oxidized Si(111) and point to Si2+ suboxide states at the buried interface. 相似文献
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The strength of the different source terms in the isotropic Second Harmonic (SH) response of the surface has been measured in different ionic crystals LiF, NaF, GGG(Gadolinium-Gallium-Garnet), and MgF2, using as excitation beam the fundamental output of a Nd:YAG laser (1.06 m). The azimuthal dependences of the optical second-harmonic generation has also been measured at the LiF(100), LiF(111), GGG(100), and GGG(111) surfaces. No experimental evidence of a bulk contribution to the anisotropic part of the nonlineau polarization has been observed. 相似文献
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Shubnikov-de Haas oscillations, piezoresistance, Hall mobility, and transverse “Hall” field due to mobility anisotropy have been studied on n-channel (111) Si inversion layers. The valley degeneracy was found to be 2 between 1.7 and 300 K. Under uniaxial mechanical stress the initially isotropic conductivity became strongly anisotropic. All results can be described by the existence of domains in the inversion layer. 相似文献
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The asymmetric distributions of surface optical second harmonic generation
(SHG) through azimuthally angular scans of (111) silicon wafers on which
thin silver films were deposited, have been detected with different
polarizations of output beams. On account of the inversion symmetry of
silicon crystals, the SHG for the Ag/Si system is mainly contributed by the
silver film and the silicon surface. In this work, we found that the
interface strain implies an asymmetric intensity variation of SHG with
respect to the surface azimuthal angles as an ultra thin Ag film is
deposited on silicon wafers. This asymmetric behavior is prominent as the
deposited silver layer is heated so that the continuous film aggregates to
become granular nanoparticles. Similar changes of the surface asymmetric SHG
are observed for a bare Si wafer imposed upon by an external force. 相似文献
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U. Höfer 《Applied Physics A: Materials Science & Processing》1996,63(6):533-547
Optical second-harmonic generation (SHG) from silicon surfaces may be resonantly enhanced by dangling-bond-derived surface states. The resulting high sensitivity to hydrogen adsorption combined with unique features of SHG as an optical probe has been exploited to study various kinetical and dynamical aspects of the adsorption system H2/Si. Studies of surface diffusion of H/Si(111)7×7 and recombinative desorption of hydrogen from Si(111)7 × 7 and Si(100)2 × 1 revealed that the covalent nature of hydrogen bonding on silicon surfaces leads to high diffusion barriers and to desorption kinetics that strongly depend on the surface structure. Recently, dissociative adsorption of molecular hydrogen on Si(100)2×1 and Si(111)7×7 could be observed for the first time by heating the surfaces to temperatures between 550 K and 1050 K and monitoring the SH response during exposure to a high flux of H2 or D2. The measured initial sticking coefficients for a gas temperature of 300K range from 10–9 to 10–5 and strongly increase as a function of surface temperature. These results demonstrate that the lattice degrees of freedom may play a decisive role in the reaction dynamics on semiconductor surfaces. 相似文献
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The YbSi interface has been investigated in the sub-monolayer regime employing Ion Scattering Spectroscopy (ISS), Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED). Three different structures, YbSi(111) 2x1, YbSi(111) 5x1, and YbSi(111) 3x1, have been established by heat treatments of the interfaces. The structures consist of a stable overlayer of Yb atoms on the Si(111) surfaces. The distance of the Yb atoms to the uppermost layer of Si atoms has been estimated by comparing the YbSi ISS intensity ratio with the predictions of a model based on classical scattering theory and a Thomas-Fermi-Moliére potential. The height of the Yb atoms relative to the substrate toplayer was found to be 1.9 ± 0.3→. 相似文献
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V. Venkataramanan K. Noguchi M. Aono T. Suzuki 《Applied physics. B, Lasers and optics》2002,74(7-8):683-689
We describe the instrumentation related to the first observation of magnetization-induced enhancement of surface second-harmonic
generation (SHG) from the paramagnetic Si(111)-7×7 surfaces. A judicious choice of polarization and sample orientation enabled
us to isolate the magnetic-field-dependent tensor element of the nonlinear susceptibility. A conductive liquid-nitrogen system,
coupled to an ultrahigh-vacuum system that is immune to the high magnetic field of 10 T, cooled the sample to about 120 K.
A high extinction that is necessary to detect the magnetization-induced SHG (MSHG) was accomplished by minimizing stray optical
effects such as Faraday rotation, photoluminescence and thermal birefringence in all optical components, with extra care taken
for the UHV window. Consistent and stable operation of this sensitive measurement system permitted experiments involving MSHG
at multiple wavelengths and temperatures. Probing the magnetization-induced optical nonlinearity was validated by quenching
the surface states by oxidation of the surface layers. From MSHG measurements at two wavelengths resonant with different surface-state
transitions, we were able to suggest that the observed MSHG is proportional to the number of dangling bond states of Si(111)-7×7.
Received: 15 January 2002 / Published online: 2 May 2002 相似文献