Intrinsic colossal magnetoresistance effect in thin-film Pr0.5Sr0.5MnO3 through dimensionality switching

A homogeneous colossal magnetoresistance (CMR) effect at low temperatures has been found in a thin-film perovskite manganite Pr0.5Sr0.5MnO3. The transition is driven not by the spin alignment as in usual CMR in bulk samples but by the localization-delocalization transition switched by the change in the effective dimensionality. Two-dimensional (x2-y2)-orbital ordering enhanced by the substrate strain is essential for the stabilization of the insulating localized state, which is on the verge of the first-order transition to the three-dimensional metallic ferromangetic state.     

Size-dependent electronic-transport mechanism and sign reversal of magnetoresistance in Nd0.5Sr0.5CoO3

A detailed investigation of electronic-transport properties of Nd(0.5)Sr(0.5)CoO(3) has been carried out as a function of grain size ranging from micrometre order down to an average size of 28 nm. Interestingly, we observe a size induced metal-insulator transition in the lowest grain-size sample while the bulk-like sample is metallic in the whole measured temperature regime. An analysis of the temperature dependent resistivity in the metallic regime reveals that the electron-electron interaction is the dominating mechanism while other processes like electron-magnon and electron-phonon scatterings are also likely to be present. The fascinating observation of enhanced low temperature upturn and minimum in resistivity on reduction of grain size is found due to electron-electron interaction (quantum interference effect). This effect is attributed to enhanced disorder on reduction of grain size. Interestingly, we observe a cross over from positive to negative magnetoresistance in the low temperature regime as the grain size is reduced. This observed sign reversal is attributed to enhanced phase separation on decreasing the grain size of the cobaltite.     

Structural and magnetic properties of the layered compound Ca2.375La0.125Sr0.5GaMn2O8

The brownmillerite-type layered compound Ca_2.375La_0.125Sr_0.5GaMn₂O₈ has been synthesized. The crystal and magnetic structures have been refined by the Rietveld analysis of the neutron powder diffraction patterns at 300 and 20 K. This compound crystallizes in the orthorhombic symmetry under the space group Pcm2₁ (a = 5.447(2), b = 11.359(4) and c = 5.322(2) Å). The compound is found to be antiferromagnetic at 20 K. The ordered Mn magnetic moment, aligned along the crystallographic b-direction, is derived to be 2.53(5) µ_B per Mn ion at 20 K.     

Analysis of colossal magnetoresistance effect in perovskite oxide heterostructures

A systemic study of magnetoresistance (MR) in manganite perovskite oxide p-n junction is performed with experiment and theoretical calculation. The spin-dependent tunneling current is calculated with a model of double-band barrier and MR with reverse bias is explained as a result of competition between tunneling currents with different spins. The reduction of recombination rate at the interface of heterojunction with magnetic field is proposed to explain positive MR at forward bias. Furthermore, negative MR is predicted to be observed in oxide heterostructure without electron filling in t2g↓ band of manganite at the interface region with both forward and reverse bias.     

超巨磁电阻材料Pr2/3Sr1/3MnO3薄膜输运性质的研究

对1/f噪声缺口的超巨磁电阻Pr2/3Sr1/3MnO3薄膜样品从10K到室温的热电势值进行了测量,热电势为负值,低温下随温度线性变化,表现为金属扩散热电势,在150K开始急剧减小,过渡到与温度T成反比的变化关系,与小极化子模型相符.结合在电阻极大温度附近对电阻和1/f噪声行为的讨论,对于发生在电阻极大温度附近的相变过程,结果支持源于相分离的渝渗模型.     

纳米晶稀土复合氧化物Dy0.5Sr0.5CoO3—Y的光谱特性研究

研究了纳米晶Dy0.5Sr0.5CoO3-Y的光谱特性。结果表明：当晶粒尺寸减小至纳米量级时,发射光谱的激子峰波长蓝移;XRD,FTIR谱表明,与体材料相比,纳米晶的衍射峰宽化,纳米晶的红外谱带大劈裂和宽化,表现为纳米尺寸量子化效应。     

Nd0.5Sr0.4Pb0.1MnO3的结构和磁性

通过室温下的中子衍射和磁性测量对多晶样品Nd0.5Sr0.4Pb0.1MnO3的结构和磁性进行了实验研究.中子衍射结果表明,该样品具有正交的钙钛矿结构,空间群是Pnma,即结构发生了晶场畸变.由M-T和R-T曲线可知,居里温度TC=273 K,其特征是随着温度的增加样品经历了从铁磁金属态转变到顺磁半导态,且转变温度Tp＝225 K;用锰氧化物晶场和双交换作用的竞争解释了其温度Tp以下的金属特性.     

Oxygen deficiency dependence of magnetic and magnetoresistive properties for La0.5Sr0.5CoO3-x thin films prepared by pulsed laser deposition

The complete (001)-oriented thin films of La_0.5Sr_0.5CoO_3-x (LSCO) are deposited on (001) SrTiO₃ substrates by pulsed laser deposition under reduced oxygen pressure. It is revealed that the c axis of the film stretches with depleting oxygen. The magnetic, electrical, and magnetoresistive properties of the films are characterized by means of various techniques. Significant dependence of these properties on oxygen deficiency in the films is demonstrated, with enhanced magnetoresistance recorded for the samples deposited over a wide range of reduced oxygen pressure. Received: 9 July 1998 / Accepted: 15 January 1999 / Published online: 31 March 1999     

Connection between colossal magnetoresistance in La0.85Sr0.15MnO3 and magnetic ordering inhomogeneities of a sample

Resistive and magnetic measurements are made for La_0.85Sr_0.15MnO₃. The dependence of resistivity on the applied magnetic field (10, 20, 30, and 50 kOe) and temperature (200–310 K) is analyzed using the s-d model and the obtained experimental data. The physical features that should be contained in models proposed to explain the colossal magnetoresistance of manganites with activation-type conductivity are determined. It is shown that the proposed mechanism associating the colossal magnetoresistance effect with phase separation into ferromagnetic and paramagnetic microregions near the Curie temperature has the necessary features.     

Structural and electrical properties of polycrystalline PbZr0.5Ti0.5O3 films deposited on La0.5Sr0.5CoO3 coated silicon by sol-gel process

La_0.5Sr_0.5CoO₃ (LSCO) films have been grown on Si (100) by a metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. Subsequent PbZr_0.5Ti_0.5O₃ (PZT) films were deposited onto LSCO films by a modified sol-gel method. Field-emission scanning electron microscopy and X-ray diffraction analysis show that PZT and LSCO films are polycrystalline and entirely perovskite phase. At an applied electric field of 250 kV/cm, the Pt/PZT/LSCO capacitor shows no polarization fatigue after 3×10⁹ switching cycles and an internal electric field; the remnant polarization P_r and the coercive field E_c are about 22 μC/cm² and 73 kV/cm, respectively. The dielectric constant of PZT films is 650 at a frequency of 1 kHz. Received: 20 February 2001 / Accepted: 6 June 2001 / Published online: 30 August 2001     

Preparation and characterization of La0.5Sr0.5CoO3 /Al-doped ZnO thin film heterojunctions

In this study, p–n heterojunctions with La_0.5Sr_0.5CoO₃ (LSCO) and Al-doped ZnO (AZO) thin films were fabricated by the radio frequency (r.f.) magnetron sputtering technique. The LSCO/AZO heterojunction was obtained by stacking the p-type LSCO thin film on the annealed n-type AZO thin film under different Ar: O₂ sputter gas ratio atmosphere. The thickness of LSCO and AZO thin films are about 400 nm and 500 nm, respectively. Good crystalline match between LSCO and AZO films was observed from the SEM and XRD analysis. The heterojunction diode clearly demonstrated rectifying behavior in the range of ?8 to +8 V in reverse shape. The turn-on voltage of the diodes is obtained around 1.5 V and is in agreement with the value obtained from the difference in the work functions of LSCO and AZO. The band structure of the heterojunction was proposed based on the results of analysis.     

Growth of polycrystalline La0.5Sr0.5CoO3 films by femtosecond pulsed laser deposition

In this paper we present the growth of La_0.5Sr_0.5CoO₃ (LSCO) films on MgO, quartz, and silicon substrates by pulsed laser deposition (PLD) using a Ti:sapphire laser (50 fs, 800 nm wavelength). The morphology and the structure of the films were studied by X-ray diffraction, atomic force microscopy, and scanning electron microscopy. The films were polycrystalline and exhibit a good adherence to the Si substrate. Different deposition parameters such as substrate temperature, oxygen pressure, and laser fluence were varied to achieve good surface quality and low resistivity crystalline films. We also defined the optimum conditions in which the deposited film surface is particulate free. The best films (droplets free) were grown at 625 °C, in an ambient oxygen pressure of 6 mbar, with an incident laser fluence of 0.19 J/cm². This is a mandatory step in the complex work of fabricating La_0.5Sr_0.5CoO₃/BaTiO₃/La_0.5Sr_0.5CoO₃ heterostructures for the development of thin film capacitors for non-volatile ferroelectric access memory devices. PACS 81.15 Fg; 42.62-b; 68.65.Ac     

Nd0.5Sr0.4Pb0.1MnO3的结构和磁性

通过室温下的中子衍射和磁性测量对多晶样品Nd_0.5Sr_0.4Pb_{0 .1}MnO₃ 的结构和磁性进行了实验研究.中子衍射结果表明，该样品具有正交的钙钛矿结构，空间群 是Pnma，即结构发生了晶场畸变.由M-T和R-T曲线可知，居里温度T_C=273 K ，其特征是随着温度的增加样品经历了从铁磁金属态转变到顺磁半导态，且转变温度T _p＝225 K；用锰氧化物晶场和双交换作用的竞争解 关键词： 结构 磁性 中子衍射 晶场畸变 p')" href="#">转变温度T_p 双交换作用     

Infrared optical properties of PbZr0.4Ti0.6O3/La0.5Sr0.5CoO3 heterostructures on platinized silicon substrate

PbZr_0.4Ti_0.6O₃/La_0.5Sr_0.5CoO₃ heterostructures have been grown on Pt/Ti/SiO₂/Si substrates by chemical solution routes. Optical properties of the PbZr_0.4Ti_0.6O₃/La_0.5Sr_0.5CoO₃ heterostructures were studied by infrared spectroscopic ellipsometry (IRSE) in the spectral range of 2.5–12.5 m. The optical constants of PbZr_0.4Ti_0.6O₃ and La_0.5Sr_0.5CoO₃ thin films were determined by fitting the IRSE data using a classical dielectric model and a Drude dielectric model, respectively. For PbZr_0.4Ti_0.6O₃ thin films, the refractive index decreases and the extinction coefficient increases as the wavelength increases. For La_0.5Sr_0.5CoO₃ thin films, the refractive index and the extinction coefficient increase as the wavelength increases. The absorption coefficient of La_0.5Sr_0.5CoO₃ thin films is greater than 10⁴ cm^-1 for the wavelength range of 2.5–12.5 m. The absorption coefficient of PbZr_0.4Ti_0.6O₃ thin films on a La_0.5Sr_0.5CoO₃/Pt/Ti/SiO₂/Si substrate is smaller than that on a Pt/Ti/SiO₂/Si substrate by a factor of two. PACS 77.84.Dy; 78.20.Ci; 81.20.Fw     

Structure,magnetic and magnetoresistance properties of Pr0.67Sr0.33MnO3 manganite oxide prepared by ball milling method

A sample of Pr_0.67Sr_0.33MnO₃ nanoparticles was synthesized by the ball milling method. X-ray diffraction pattern of the sample showed orthorhombic system with Pnma space group. The average crystallite size of 110 nm was obtained by both Scanning Electron Microscopy and X-ray diffraction. Magnetic measurements showed para-to-ferromagnetic transition with a Curie temperature of T_C=269 K. Electrical investigations showed that all our samples exhibit a semi-conducting behavior above T_C and a metallic-like one at lower temperatures. The sample exhibited a large magnetoresistance of 30% at room temperature in an applied magnetic field of 2 T. The transport and the magnetic properties were interpreted in terms of the existence of magnetic polarons in the sample.     

类钙钛矿化合物Ca(Mn2 Cu1)Mn4 O12的磁性与磁电阻效应

利用固相反应法制备了名义成分为Ca(Mn2 Cu1 )Mn4 O1 2 的类钙钛矿锰氧化物 .x射线衍射表明 ,为了获得较为致密的样品和减小杂相含量 ,可以采用高温烧结再在 10 73K长时间空气中退火的制备方法 .样品在低温下同时存在铁磁相和反铁磁相 ,由于反铁磁相的存在导致样品在 4 5K时的磁化强度显著降低 ,并在 8T的高磁场下仍未达到饱和 .样品呈半导体导电性质 ,在 85K和 6T磁场下磁电阻比的最大值可达 - 4 6 % .     

Research on charge-ordering state in La0.5Sr0.5MnO2.88 and La0.5Sr0.5Mn0.5Ti0.5O3 systems

The structural, magnetic and transport properties of La_0.5Sr_0.5MnO_2.88 and La_0.5Sr_0.5Mn_0.5Ti_0.5O₃ samples have been investigated systematically. Indeed, this series has been considered to understand the influence of physical parameters such as oxygen deficiency and titanium doping effect in undoped La_0.5Sr_0.5MnO₃ sample. Ceramic material based on La_0.5Sr_0.5MnO_2.88 exhibits interesting behaviours of charge-ordering (CO), ferromagnetic (FM) states and a good conductivity down to the lowest temperatures. The substitution of Ti for Mn destroyed drastically the CO, damaged the motion of itinerant e_g electrons and changed the local parameters of perovskite cell. A change of the structure from tetragonal to rhombohedral symmetry is observed causing a weakening of double-exchange interaction. The experiment results show that the suppression of the CO is sensitive to the variety of Mn³⁺/Mn⁴⁺ ratio. In a field of 8 T at 10 K, FM and CO phase can be evaluated to be ∼20:80 according to the μ_exp/μ_cal ratio for La_0.5Sr_0.5MnO_2.88, whereas the CO state is suppressed for La_0.5Sr_0.5Mn_0.5Ti_0.5O₃ sample, FM and anti-ferromagnetic (AFM) phase are coexisted and evaluated to be ∼54:46, respectively.     

晶界对庞磁电阻颗粒薄膜的磁学和输运性能的影响

采用脉冲电子束沉积技术，在Si(100)单晶衬底上沉积庞磁电阻La_0.67Ca_0.33MnO₃颗粒薄膜，并对它的磁学性能和电学输运性能进行了表征.研究晶界对庞磁电阻薄膜的物理性能的影响，结果表明，晶界的存在使得晶粒之间的耦合变弱，在变温磁化过程中表现出团簇玻璃态行为，金属—绝缘体转变温度(T_p)远远低于铁磁—顺磁转变温度(T_c).低温下电子输运具有弱局域化行为.在低磁场下，晶界的存在掩盖了La_0.67Ca_0.33MnO₃的本征磁电阻行为. 关键词： 脉冲电子束沉积 晶界 磁学和电学输运性能 庞磁电阻     

半掺杂钙钛矿Pr0.5Sr0.5CoO3中磁熵变的标度律研究

对半掺杂氧化钴Pr0.5Sr0.5CoO3在居里温度附近的磁熵变进行了研究。研究表明,磁熵变的最大值依赖于外磁场强度;半高宽也与磁场强度有关;相对制冷能力与磁场强度几乎呈线性关系。另外,在不同的温度和磁场强度下测得的磁熵变能够重新标度为一条普适的曲线。依据该唯象的普适曲线,能够较准确的计算出在不同温度和磁场强度下磁熵变的大小。