利用激基复合物发光的有机白光电致发光器件

以NPB为空穴传输材料,(dppy)BF为发光层,Alq为电子传输层和色度调节层,制备了有机白光电致发光器件.该器件的白光发射是来自于(dppy)BF与NPB的固界表面形成的激基复合物发光,以及NPB与(dppy)BF发射的蓝光.该白光器件的色度稳定,在电压10～25V的变化范围内,色坐标变化由(0.29,0.33)到(0.31,0.35).器件在4V开启,12V电压下亮度和效率分别为200cd/m²和0.45lm/W.     

利用氧等离子体处理阳极银实现高效率顶发射有机电致发光

主要报道在器件结构为玻璃衬底/Ag(阳极)/NPB(空穴传输层)/Alq3(电子传输及发光层)/Sm(半透明阴极)/Alq3的顶发射有机电致发光器件中,利用氧等离子体对阳极银的表面进行处理来降低阳极和空穴传输层(Ag/NPB)界面处的空穴注入势垒,提高顶发射有机电致发光器件的性能。主要研究了氧等离子体处理时间对阳极银和顶发射有机电致发光器件光电特性的影响。紫外光电子能谱表明,氧等离子体处理能有效降低Ag/NPB界面处的空穴注入势垒。通过优化处理时间获得最佳器件性能,优化后的器件最大效率可达6.14cd/A。     

基于一种新型有机金属配合物的量子阱结构有机电致白光器件的性能研究

利用一种新型有机金属配合物二(2-(4-三氟甲基-2-羟基苯基)苯并噻唑锌(Zn(4-TfmBTZ)₂),基于NPB/Zn(4-TfmBTZ)₂界面电致激基复合物,制备了一系列异质结量子阱结构有机电致白光器件.结果表明,量子阱结构可以有效提高界面电致激基复合物的发光效率以及器件的显色指数和色度稳定性.得出器件ITO/NPB (60 nm)/Zn(4-TfmBTZ)₂(3.0 nm)/NPB (4.0 nm)/Zn(4-TfmBTZ)_{关键词： 二(2-(4-三氟甲基-2-羟基苯基)苯并噻唑锌 电致激基复合物 量子阱 白光}     

混合发光层有机电致发光器件中的多重成分发射

以等摩尔空穴传输材料TPD和电子传输材料PBD组成结构为ITO/TPD/TPD∶PBD/PBD/Al的混合物发光层有机电致发光(EL)器件,观察到了相对于组成材料的荧光光谱红移的宽发射带。通过比较EL光谱,光致发光光谱及EL光谱分解,表明电致发光中同时包含单体发射、激基复合物和电荷对复合物的发射。激基复合物为TPD的激发态TPD*与PBD的基态相互作用形成TPD*PBD类型的复合物,电荷对复合物是带电荷的空穴传输分子(D+)的空穴和电子传输分子(A-)的电子交叉复合而形成的(D+-A-)*复合物。各激发态在电场作用下呈现不同的形成机理和复合过程,并且单体发射和激发态复合物的比例随电场而变化,导致发射光谱随电场增强而蓝移。该器件的最高亮度和最大外部量子效率分别为240 cd·(cm2)-1和0.49%。有机固态界面激基复合物或电荷对复合物的发射常出现宽的红移发射带,是调节发光颜色的有效手段。     

基于MADN空穴传输层的双层结构高效率黄绿光OLED及其阻抗谱分析

以MADN为空穴传输层,主-客掺杂体系[Alq₃∶0.7 Wt%rubrene]为发光兼电子传输层,构建了双层结构的高效率黄绿光OLED器件。该器件的黄绿光由主发光体Alq₃通过不完全能量转移到客发光体rubrene实现,电致发光峰值位于560 nm,1931CIE色坐标为(0.46, 0.52),最大发光效率达到了7.63 cd·A-1,比相应的NPB做空穴传输层的双层结构器件提高了30%。通过构建以MADN或NPB为空穴传输层的空穴单载流子器件并进行阻抗谱分析,结果表明MADN可以作为一种非常有效的空穴传输层,其空穴迁移性略低于NPB,这恰好弥补了OLED器件中空穴迁移比电子迁移快这一缺陷,为改善OLED发光层中载流子的平衡性创造了条件,从而提高了器件的发光效率。此外,MADN做空穴传输层的双层结构OLED的发光效率与传统三层结构器件(MADN和Alq₃分别作为空穴传输层和电子传输层)基本相当,表明了这种双层结构器件在简化器件结构的同时并不以牺牲发光效率为代价,发光层[Alq₃∶0.7 Wt%rubrene]兼具有优良的电子传输性能。     

微腔有机电致发光白光器件设计及制作

用一种宽谱带材料Alq₃作为发光层,设计并制作白色有机微腔电致发光器件。器件结构:Glass/DBR/ITO(194 nm)/NPB(93 nm) /Alq₃(49 nm)/MgAg(150 nm),得到了位于蓝(488 nm)和红(612 nm)光区域的两个腔发射模式,并通过颜色匹配获得了白光。器件的最大电致发光亮度16 435 cd/m²,最大效率11.1 cd/A,典型亮度值100 cd/m²时的发光效率、电压、电流密度分别是9 cd/A,6 V和1.2 mA/cm²,CIE 色坐标为(0.32, 0.34)。在不同的驱动电压下,器件的发光颜色稳定,说明了微腔是一种制作白光OLED的有效结构。     

非掺杂型高效绿色磷光有机电致发光器件

在空穴传输层TCTA与电子传输层TPBi之间引入磷光染料Ir(ppy)3超薄发光层,制备了结构为ITO/MoO_3(2 nm)/NPB(40 nm)/TCTA(10 nm)/Ir(ppy)3(xnm)/TPBi(40 nm)/LiF(1 nm)/Al(80 nm)的非掺杂磷光有机电致发光器件。通过调控非掺杂发光层的厚度,详细研究了Ir(ppy)3层厚度对器件性能的影响。实验结果表明,当非掺杂发光层厚度为0.2 nm时,器件的性能最好,器件的亮度、效率和外量子效率分别达到26 350 cd·m~(-2)、42.9 cd·A~(-1)和12.9%。研究结果表明,采用超薄的非掺杂发光层可以简化器件结构和制备工艺,获得高效率的OLED器件。     

基于[NPB+Zn(4-TfmBTZ)2-]电致激基复合物的有机电致白光器件

将不同浓度的NPB掺杂到一种新型有机电致发光材料Zn(4-TfmBTZ)2层中制备了有机电致白光及近白光器件,发现NPB浓度不仅影响器件的发光效率,而且影响器件的色度和显色指数.随着Zn(4-TfmB-TZ)2层中NPB摩尔分数从0％～10％逐渐增加,电致激基复合物的发射逐渐增强,器件发光效率先增加后减小,在相同电压下...     

Nondoped-type White Organic Light-Emitting Diode Using Star-Shaped Hexafluorenylbenzene as an Energy Transfer Layer

采用真空蒸镀的方法以星形六苯芴类新材料1,2,3,4,5,6-hexakis(9,9-diethyl-9H-fluoren-2-yl)benzene(HKEthFLYPh)作为能量传输层制备了indium-tin-oxide(ITO)/N,N′-bis-(1-naphthyl)-N,N′-diphenyl-(1,1'-biphenyl)-4,4′-diamine(NPB)/HKEthFLYPh/5,6,11,12-tetraphenylnaphtacene(rubrene)/tris(8-hydroxyquinoline) aluminum (Alq3)/Mg:Ag的白色有机电致发光器件. NPB和Alq3分别作为蓝色发光层和电子传输层,NPB和Alq3之间的超薄Rubrene层 作为黄色发光层. 结果表明,超薄rubrene层改善了白光器件的色纯度与稳定性,器件的光谱及色坐标几乎不随驱动电压的变化而改变.当rubrene层厚度为0.3 nm时,器件的Commissions Internationale De L′Eclairage (CIE)色坐标为(0.32,0.33). 驱动电压为18 V时,器件的最大亮度为4816 cd/m2.     

插入电荷控制层对蓝色OLED发光性能的提高

用蓝色有机荧光材料N6,N6,N12,N12-tetrap-tolylchrysene-6,12-diamine(DNCA)作为发光层,在发光层中间以及发光层与电子传输层之间插入2-methyl-9,10-di(2-napthyl)anthracene(MADN)和9,10-di(2-naphthyl)anthracene(ADN)作为电荷控制层,制备了结构为ITO/NPB(40 nm)/DNCA(15 nm)/MADN(3nm)/DNCA(15 nm)/ADN(3 nm)/Bphen(30 nm)/LiF(0.8 nm)/Al(120 nm)的蓝色有机电致发光器件(OLED)。该器件的最大电流效率和最大亮度分别为5.6 cd/A和23 310 cd/m2。与传统的单发光层器件相比,最大电流效率和最大亮度分别提高了70%和87%。器件发光性能的提高可归结于两个电荷控制层在整个器件中的协同作用。第一电荷控制层MADN的作用主要是将发光层区域分成两个部分,从而扩大了激子在发光层中的复合区域;第二电荷控制层ADN可以有效地将空穴限制在发光层中,避免了激子在电子传输层中形成的无辐射跃迁从而提高了器件的发光性能。     

High-Efficiency Blue Electroluminescence Based on Coumarin Derivative 3-(4-(anthracen-10-yl)phenyl)-benzo[5,6]coumarin

The electroluminescent (EL) properties of a new coumarin derivative, 3-(4-(anthracen-10-yl)phenyl)-benzo[5,6]coumarin (APBC), were investigated. The results show that the EL devices comprised of vacuum vapor-deposited films using the derivative as dopant exhibited blue emission that is identical to the photoluminescence of the thin film. The electroluminescence device of ITO/2-TNATA (5?nm)/NPB (40?nm)/CBP : APBC (1.0?wt%, 30?nm)/PBD (30?nm)/LiF (1?nm)/Al (100?nm) gives a maximum luminous efficiency of 2.3?cd/A at the current density of 20?mA/cm², and maximum luminance of 5169?cd/m² at 16?V. The external quantum efficiency of the device is 1.85?%.     

Efficient and stable single-dopant white OLEDs based on 9,10-bis (2-naphthyl) anthracene

Efficient white organic light-emitting diodes (WOLEDs) are fabricated with a thin layer of 9,10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene as the source of white emission. A device with the structure of ITO/NPB (70 nm)/ADN: 0.5% Rubrene (30 nm)/Alq₃ (50 nm)/MgAg shows a maximum current efficiency of 3.7 cd/A, with the CIE coordinates of x=0.33, y=0.43. The EL spectrum of the devices and the CIE coordinates remains almost the same when the voltage is increased from 10 to 15 V and the current efficiency remains quite stable with the current density increased from 20 to 250 mA/cm².     

Characterization of two-emitter WOLED with no additional blocking layer

In this paper, white organic light emitting diodes (WOLEDs) utilizing two primary-color emitters with no additional blocking layer are fabricated. With a structure of ITO/2TNATA (20 nm)/NPB (20 nm)/NPB: rubrene (2%) (10 nm)/ADN (30 nm)/Alq₃ (20 nm)/LiF (1 nm)/Al (100 nm), a white light with CIE coordinates of (0.344, 0.372) is generated at a current density of 30 mA/cm² and the electroluminescence (EL) spectra consist of two broad bands around 456 nm (ADN) and 556 nm (NPB:rubrene). The device shows the low turn-on voltage and bright white emission with a power efficiency of 2.3 lm/W at a luminance of 100 cd/m². Through control of the location of the recombination zone and energy transfer, a stable white light emission is achieved. The maximum color shift is less than 0.02 units on the 1931 CIE x,y chromaticity diagram. Given the spectral power distribution of WOLED, the parameters of a light source (chromaticity coordinate, CCT, CRI, and the luminous efficacy) can be calculated. A MATLAB program for this purpose is developed in this paper. Based on this, the design of WOLED for an illumination and display system using a white emitter with color filter arrays is discussed.     

Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride

Strong white electroluminescence (EL) from SiN-based devices containing Si nanodots with a density of more than 4.6×10(12)cm(2) was investigated. The white EL illustrates enhanced light emission with increasing applied voltage and can be divided into two components, a dominant peak at ~710 nm and weak one at ~550 nm, which are close to those of the PL spectra optically pumped by the 325 and 488 nm lines, respectively. Based on the PL characteristics, we propose that the dominant EL band arises from the band-to-band recombination in the dense Si nanodots where quantum confinement plays a decisive role in the light emission, whereas the weak EL band originates from the radiative Si dangling bond (K⁰) centers in the silicon nitride matrix.     

High-efficiency Simple Structure White Organic Light-emitting Devices Based on Rubrene Ultrathin Layer

White organic light-emitting devices (WOLEDs) were fabricated with an ultrathin layer of rubrene inserted between NPB and TPBI. With a simple three-layer structure of ITO/NPB(50 nm)/rubrene(0.1 nm)/TPBI(50 nm)/LiF/Al, a white light with CIE coordinates of (0.31, 0.30) were generated. The device gave a maximum luminance efficiency of 2.04 lm/W at 5 V. Furthermore, with a multilayer structure of ITO/m-MTDATA(30 nm)/NPB(20 nm)/rubrene(0.1 nm)/TPBI(40 nm)/Alq₃(10 nm)/LiF/Al, the device reached a maximum luminance efficiency of 4.29 lm/W at 4 V and the luminance could exceed 10 000 cd/m² at 10 V.     

荧光染料掺杂的高效率、高亮度白色有机电致发光器件

制备了结构为 ITO/NPB（30 nm）/Rubrene（0.2 nm）/CBP：Bczvbi（8 nm,x%）/Bphen（30 nm）/Cs₂CO₃：Ag₂O（2 nm,20%）/Al（100 nm）的器件。研究了Bczvbi掺杂浓度（x=5,10,15）对白光器件性能的影响。综合利用发光层中主客体之间的能量转移和空穴阻挡层的空穴阻挡特性,得到了高效率、高亮度的白色有机电致发光器件。当Bczvbi的掺杂质量分数为10%时,器件的效率和亮度都为最大。驱动电压为7 V时,最大电流效率为4.61 cd/A;驱动电压为9 V时,最大亮度为21 240 cd/m²。当驱动电压从4 V增加到9 V时,色坐标从（0.36,0.38）变化为（0.27,0.29）,均处于白光区域。     

LiF超薄层引起的OLEDs发光光谱展宽

将LiF插入到发光层Alq₃中,制备了有机电致发光器件(OLED),其器件的结构为:ITO/NPB (45 nm)/Alq₃ (x nm)/LiF (0.3 nm)/Alq₃ /Al(150 nm)。发现器件的电致发光谱(Electroluminescence spectra, EL)有非常明显的展宽现象,这为白光器件的制备提供了一条简单的途径。通过对比LiF在Alq₃中不同厚度处的发光谱,发现在x=10时谱线展宽最显著,器件最大亮度在22 V时达到8 260 cd/m²,最大效率可达 4.83 cd/A,并对其光谱展宽的机理及器件特性进行了分析。     

以ILTO为阳极的高效有机电致发光器件

以高功函数的掺杂钛酸镧的氧化铟薄膜(ILTO)及氧化铟锡(ITO)作为阳极,制备了Glass/anode/NPB/Alq3/LiF/Al结构的有机电致发光器件。得益于ILTO较好的掺杂性、低的表面粗糙度、高的可见光透过率以及高的有效功函数,以ILTO为阳极的有机电致发光器件的开路电压得到降低,最高亮度、电流效率、功率效率以及外量子效率均获得了成倍的提高。研究结果表明,ILTO是一种潜在的光学窗口材料,有望在各种光电器件中得到广泛的应用。     

白色有机发光器件及其稳定性

报道了一种稳定的白色有机薄膜电致发光器件.电流效率6cd/A,在电流密度20mA/cm²驱动下,亮度为1026cd/m²;最高亮度21200cd/m²,色度(x=0.32,y=0.40).该器件具有较平稳的效率电流关系,即具有弱的电流荧光猝灭.初始亮度100cd/m²下,半亮度寿命达22245h.