Observation of the ferroelectric phase transition in Pb5Ge3O11 by the chemical potential changes

We observed the transition from the ferroelectric (FE) to paraelectric (PE) phase in the semiconducting, ferroelectric Pb₅Ge₃O₁₁ single crystal with the use of the contact electrode method. To this purpose a thin, metallic layer was placed onto the Pb₅Ge₃O₁₁ crystal surface, forming the contact electrode. At opposite ends of the contact electrode, silver wires were glued and a voltage was applied to the contact electrode in such a way that the electric current could flow only through the attached electrode. The electric resistance R(T) of the electrode was measured as a function of temperature. Two series of measurements were performed. In one of them the ferroelectric c-axis of the investigated crystal was perpendicular to the contact electrode. In the second one the c-axis was parallel to the attached electrode. We used gold as the contact electrode material. The anomaly in the R(T) in a form of a kink at T _kink?=?452?K was found for both c-axis orientations. The measured value of T _kink, appearing in the temperature dependence of contact electrode resistance, corresponds exactly to the phase transition temperature T _C from the FE to PE phase of the investigated Pb₅Ge₃O₁₁ material. This result demonstrates that the contact electrode method, primarily proposed exclusively to find critical temperatures of metallic samples, also works well in the case of ferroelectric and semiconducting materials like Pb₅Ge₃O₁₁. We ascribe the effect of the resistance kink in the temperature dependence of the contact electrode R(T) to thermal excitations of the electrons with different rates below and above T _C due to different electronic activation energies in the FE and PE phases of the investigated Pb₅Ge₃O₁₁ crystal. It, however, means that the phase transition in the electronic subsystem of the Pb₅Ge₃O₁₁ transfers into the electron gas of the contact electrode via the chemical potential relation µ _sample?=?µ _electrode due to the contact between the sample and the electrode. The magnitude of the kink, observed in the R(T) dependence, was higher on heating than on cooling. The additional measurement of the thermally stimulated current (TSC) was carried out on the non-polarised Pb₅Ge₃O₁₁ sample. In this series of measurements, the sample was covered with gold layers sputtered on the two opposite surfaces of the crystal. The TSC anomaly occurred, related to the residual pyroelectric effect, several degrees below the Curie temperature, T _C, and does not disturb the detection of the critical point with the use of the contact electrode method.     

A threshold electric field for acoustic emission from ferroelectric Pb5Ge3O11

Acoustic emission has been observed in ferroelectric Pb₅Ge₃O₁₁ and TGS near saturation polarisation. An abrupt electric field threshold for AE has been discovered in Pb₅Ge₃O₁₁ (but not in TGS) which is related to the onset of domain wall movement.     

Acoustic emission from domain wall motion in ferroelectric lead germanate

Simultaneous visual observation and monitoring of the ultrasonic signals show that acoustic emission (AE) produced as Pb₅Ge₃O₁₁c-plate crystals undergo the ferroelectric hysteresis cycle results from domain wall nucleation and collapse. AE activity takes place predominantly at applied electric fields large enough to bring a crystal substantially towards its saturation polarisation. A notable feature observed in Pb₅Ge₃O₁₁ and Pb_5?xBa_xGe₃O₁₁ alloys is the existence of an abrupt threshold electric field, denoted by E_∞ in the high gain limit, for production of AE: as the electric field is increased beyond the threshold value, the amount of AE observed increases by several orders of magnitude. E_∞ depends linearly on the inverse of the c-plate sample thickness (1/d) and also upon sample temperature—falling to a minimum at about 70°C for Pb₅Ge₃O₁₁ and then rising steeply as the Curie temperature (178°C) is approached. E_∞ is also dependent on the rate of change of the applied electric field and as this is increased extrapolates to the high frequency limit of the coercive field. Measurements of crystal polarisation indicate a one-to-one correspondence between AE and the electrical Barkhausen pulses which occur during polarisation reversal—further evidence for domain nucleation and collapse as the source of AE. Optical and AE studies made simultaneously on gadolinium molybdate add confirmation that these particular processes are responsible for the AE produced by ferroelectric crystals.     

Raman scattering from the ferroelectric mode in the Pb5(Ge1−x,Six)3O11 system

We have observed the temperature dependence of the ferroelectric soft mode in the single crystals of Pb₅(Ge_1?x,Si_x)₃O₁₁ (x = 0.05 and 0.10) by means of the Raman scattering technique. The increasing of the amount of the silicon impurity lowers the soft mode frequency and influences the small change on the damping. The damping constant seems to be dominantly dependent upon the frequency. The experimental results have been well explained by considering the change of the short range harmonic force due to the silicon impurity.     

Neutron diffraction study of magnetic ordering in PrCu2Si2, PrCu2Ge2, PrFe2Ge2 and NdFe2Ge2

A neutron diffraction study of polycrystalline PrCu₂Si₂ [1], PrCu₂Ge₂ [2], PrFe₂Ge₂ [3] and NdFe₂Ge₂ [4] intermetallics carried out at liquid helium temperature shows the presence of a collinear antiferromagnetic order below T_N = 19 ± 1 K [1], T_N = 16 ± 1 K [2], T_N = 9 ± 1 K [3] and 13 ± 1 K [4]. Magnetic moment, parallel to the c-axis is localized on RE ions only. The magnetic structure of these compounds consists of ferromagnetic layers perpendicular to the c-axis coupled antiferromagnetically with sequence +-+- for PrCu₂Si₂ and PrCu₂Ge₂ and +--+ for PrFe₂Ge₂ and NdFe₂Ge₂. The RE moments amount close to the free ion values for Fe containing compounds but are smaller in those containing Cu suggesting a fairly strong influence of crystal field.     

Effect of 3d metal ion doping on the structure and superconductivity of (Tl0.5Pb0.5)Sr2CaCu2O7

(Tl_0.5Pb_0.5)Sr₂Ca(Cu_2−xM_x)O₇ (M=Co, Ni and Zn) have been synthesized and investigated by means of X-ray diffraction, scanning electron microscope, electrical resistivity and magnetic susceptibility measurements. X-ray diffraction patterns show that all studied samples contain the nearly single ‘1212’ phase. They crystallize in a tetragonal unit cell with a=3.8028-3.8040 Å and c=12.0748-12.1558 Å. In (Tl_0.5Pb_0.5)Sr₂Ca(Cu_2−xM_x)O₇ system (M=Co or Ni), the superconducting critical temperature T_c decreases linearly with both Co and Ni concentrations and the rate of T_c decrease is around −6.5 and −7.0 K/at%, respectively. For (Tl_0.5Pb_0.5)Sr₂Ca (Cu_2−xZn_x)O₇ system, the dependence of T_c on the Zn dopant concentration deviates from a linear behavior and the Zn substitution suppresses T_c much less (−2.5 K/at%) than the Co and Ni substitutions. The suppression in T_c in Co and Ni doped samples are attributed to the magnetic pair-breaking mechanism and the reduction in the carrier concentration. The suppression of T_c in Zn doped samples is not caused by the reduction in carrier concentration which should remain constant, but rather due to nonmagnetic pair-breaking mechanism induced by disorder as well as the filling of the local Cu d_x²−y² state due to the full d band of Zn ions.     

The canted ferrimagnetic structure of Nd5Ge4 by neutron diffraction

The chemical and magnetic structures of the intermetallic compound Nd₅Ge₄ were determined from neutron diffraction powder data. In contrast to the isomorphous heavy rare-earth compounds, Nd₅Ge₄ orders with a canted ferrimagnetic arrangement below T_c = 52 K. The ordered Nd moments are 2.6, 3.1 and 2.4 μ_B for the three sites respectively. The magnetic space group is Pnm'a' and the plane of easy magnetization (010).     

(Pb0.97La0.02)(Zr0.65Sn0.35-xTi x)O3反铁电陶瓷的热膨胀性质

在-100—200℃温度范围内，测量了(Pb_0.97La_0.02)(Zr_{0.65< /sub>Sn0.35-xTix)O3(PZST，0.1≤x≤0.14)反铁电陶 瓷的热膨胀性质.实验结果表明，组分在0.1 ≤x≤0.12的试样室温下为反铁电(AFEt)四方相，热膨胀系数(α)在低温段发生 “弯曲” ，而变温x射线衍射谱(XRD)显示材料保持四方相结构；当Ti含量在0.125≤x≤0.14时，室温 下是铁电三方相(FER)，温度升高时FER→AFEt相变体 积收缩，AFEt→立方顺电(PE c)相变体积增大；变温XRD谱证明了材料相结构随温度的转变过程.用多元复杂 化合物存在 纳米线度组分非均匀的观点解释了热膨胀性质随Ti含量演化的物理机理，并得到了该系统的 温度-Ti(x)含量相图. 关键词： 热膨胀性质 铁电/反铁电相界 反铁电陶瓷 PZST}     

Pressure dependence of elastic constants of orthorhombic Li2Ge7O15 above and below the ferroelectric transition

The pressure derivatives of the elastic constants c_ij of orthorhombic Li₂Ge₇O₁₅ have been determined at 293 K by the method of pressure-induced shifts of resonance frequencies of thick plates at ca. 15 MHz in the range between 0 and 1500 bar. Approaching the transition at ca. 630 bar, all P_ij = dc_ij/dp (i, j = 1, 2, 3; p pressure) develop strongly negative values. At higher pressures a similar behaviour with reversed sign is observed. The pressure derivatives of the pure “shear resistances” c₄₄, c₅₅, and c₆₆ depend only slightly on pressure even in the vicinity of the transition. The main interactions driving the transition are of the totally symmetric type. The values dK^?1/dp (K volume compressibility) deviate strongly from the quasi-invariant value of ca. 5 observed in almost all stable crystals (dK^?1/dp = ? 1750 at 620 bar and 1380 at 700 bar). The anomalous piezoelastic behaviour reflects the anomalous thermoelastic behaviour: negative P_ij in the low pressure (high temperature) phase correspond to positive T_ij = d log c_ij/dT (T temperature) and vice versa.     

Specific heat anomaly in Bi1.6Pb0.4Sr2Ca2Cu3Oy superconductor

The specific heat anomaly ΔC of Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_y was observed in the temperature range 80–100 K. It is estimated from ΔC that γ15 mJ/mol·K² and H_{c2(T=0)100 T} in this sample. The specific heat anomaly confirmed the occurrence of bulk superconductivity of the high-T_c phase in Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_y superconductor.     

Superconductivity in the pseudo-binary A-15 compounds Mo3Os1−χRuχ and Mo3Ir1−χRuχ

Superconducting transition temperatures (T_c) and room temperature lattice parameters (α_o) are reported for the A-15 pseudo-binary systems Mo₃Ir_1−χRu_χ and Mo₃Os_1−χRu_χ (0 ≤ x ≤ 0.8). If Mo₃Ru could be synthesized in the A-15 structure, its T_c and α_o are predicted to be 10–11°K and 4.95 Å, respectively.     

High pressure study of BaPb0.7Bi0.3O3 films

The resistance R, the superconducting transition temperature T_c and the energy gap Δ(T) have been measured on the BaPb_0.7Bi_0.3O₃ films up to 14 kbar. We have found that up to 14 kbar: (1) pressure suppresses T_c and Δ(T) while enhances R, (2) the value of 2Δ(0)/kT_c is 3.8±0.1, independent of pressure, and (3) the Δ(T)/Δ(0) varies with T/T_c in a BCS fashion but only for T/T_c<0.75 and independent of pressure. The results show that BaPb_1?xBi_xO₃ is a weak-coupling superconductor, but fail to provide information about the cause for the high T_c of the compound.     

Effect of pressure and magnetic field on bilayer La1.25Sr1.75Mn2O7 single crystal

We report the temperature dependence of susceptibility for various pressures, magnetic fields and constant magnetic field of 5 T with various pressures on La_2−2xSr_1+2xMn₂O₇ single crystal to understand the effectiveness of pressure and magnetic field in altering the magnetic properties. We find that the Curie temperature, T_c, increases under pressure (dT_c/dP=10.9 K/GPa) and it indicates the enhancement of ferromagnetic phase under pressure up to 2 GPa. The magnetic field dependence of T_c is about 26 K for 3 T. The combined effect of pressure and constant magnetic field (5 T) shows dT_c/dP=11.3 K/GPa and the peak structure is suppressed and broadened. The application of magnetic field of 5 T realizes 3D spin ordered state below T_c at atmospheric pressure. Both peak structure in χ_c and 3D spin ordered state are suppressed, and changes to 2D-like spin ordered state by increase of pressure. These results reveal that the pressure and the magnetic field are more competitive in altering the magnetic properties of bilayer manganite La_1.25Sr_1.75Mn₂O₇ single crystal.     

Superconductivity and electrical resistivity of amorphous Nb75Ge25 and Nb80Si20 after heavy ion irradiation at low temperature

Low temperature irradiation of thin films of Nb₇₅Ge₂₅ (T_c = 3.2 K) and Nb₈₀Si₂₀ (T_c = 4.7 K) with 20 MeV sulfur ions leads to an increase of T_c of about 0.5 K and a decrease of ? of about 1.5 to 3.5%. Annealing up to room temperature partly restores the initial values. Qualitatively the results can be explained by irradiation induced smearing of the structure factor, which is partially recovered by annealing.     

Heat capacity of the Nb3Al0.8Ge0.2 compounds

Heat capacity of the Nb₃Al_0.8Ge_0.2 samples have been measured in the temperature range 14–25K. It has been shown that the electron part of the heat capacity (γ) and the Debye temperature undergo only a small change after thermal treatment leading to significant increase of superconducting T_c. Such an increase of the band density of states N(E_F)_band may be caused by appropriate changes of phonon spectrum. The character of these changes is determined, to a great extent, by localization of the d-electrons in the niobium chains.     

Structural and dielectric properties of Pb5(Ge,Si)O11

The ferroelectric lead germanate (Pb₅Ge₃O₁₁) and its isomorphous compounds are important because of their uses as pyroelectric and electro-optic devices. Comparison of inter-planar d-spacings of Pb₅Ge_3−x Si _x O₁₁ (x=0, 0.3, 0.7 and 1.00) suggests that there is no change in basic structure of Pb₅Ge_3−x Si _x O₁₁ when Si is substituted for Ge in small quantity (x<1). The dielectric properties of the Si-substituted compounds have been studied as a function of temperature (30 to 200°C). The ferroelectric-paraelectric phase transition has been observed at 185°C. The Si doping causes (a) Curie point to shift towards low temperature, (b) peak value of the dielectric constant to decrease and (c) phase transition diffuse. The fast increase in dielectric constant of pure Pb₅Ge₃O₁₁ with temperature (beyond transition temperature) may be attributed to the development of space charge polarization in the system.     

Cr3+掺杂的Cd3Al2Ge3O12光谱特性及晶场参数计算

采用高温固相法合成了Cd₃Al₂Ge₃O₁₂：Cr³⁺多晶材料,利用X射线衍射对其结构进行了分析,通过Cr³⁺的室温吸收光谱、室温和77K发射光谱分别对其光谱特性和晶场参数进行了分析和计算.结果表明：在450 nm的蓝光激发下,Cd₃Al₂Ge₃O₁₂：Cr³⁺室温发 关键词： 3Al₂Ge₃O₁₂：Cr³⁺')" href="#">Cd₃Al₂Ge₃O₁₂：Cr³⁺ 荧光光谱 晶场参数 可调谐激光     

Specific features of dielectric anomalies in Pb<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te(Ga) near a ferroelectric phase transition

The dielectric properties of Pb_{1 ? x} Ge _x Te(Ga) (x = 0.02, 0.03, 0.05) were studied in the temperature range 77–150 K at frequencies of 10⁴–10⁶ Hz. It is revealed that the ferroelectric phase transition temperature T _c and the permittivity ? of Pb_{1 ? x} Ge _x Te(Ga) increase substantially with the Ge content. The temperature dependence of the permittivity of Pb_{1 ? x} Ge _x Te shows two peaks; the main peak is at the ferroelectric phase transition temperature T _c , and an additional peak is at T ₁ > T _c .     

Effect of Pb additive on crystallization kinetics of Se80In20 glassy matrix

The crystallization kinetics of bulk Se₈₀In_20−xPb_x (x=0, 5, 10 and 15) chalcogenide glasses have been studied using a differential scanning calorimeter (DSC) with different heating rates (5, 10, 15 and 20 K/min) under non-isothermal conditions. Various kinetic parameters of crystallization, such as crystallization temperature T_c, peak crystallization temperature T_p, activation energy for crystallization E_c and order parameters n, m have been determined to study nucleation and growth during crystallization. The reaction rate constant K and pre-exponential factor K₀ also have been determined. The composition dependence of these parameters may be explained on the basis of modification of chemical bonds present in the Se–In system due to addition of Pb content.     

A magnetic study of the ThCr2Si2-type RPd2Ge2 (R=Pr, Nd) compounds. Magnetic structure of PrPd2Ge2 from powder neutron diffraction

The magnetic properties of the PrPd₂Ge₂ and NdPd₂Ge₂ compounds have been investigated by magnetic measurements, specific heat measurements and neutron diffraction experiments. The PrPd₂Ge₂ compound orders antiferromagnetically below T_N=5.0(2) with an original modulated magnetic structure characterized by a magnetic cell three times larger than the chemical one by tripling of the c parameter. The palladium atom is non magnetic and the Pr moments are parallel to the c-axis with a value of ≈2.0 μ_B at 2 K. The specific heat measurements clearly detect a low temperature transition for the NdPd₂Ge₂ compound, interpreted as a Nd sublattice antiferromagnetic ordering below 1.3(2) K.