Structural,morphological and optical studies on chemically deposited nanocrystalline CdZnSe thin films

In the present paper, cadmium zinc selenide (Cd_0.5Zn_0.5Se) thin films were deposited on glass substrates by chemical bath deposition with optimized deposition parameters. 2-mercaptoethanol was used as a capping agent. The as-deposited thin films were annealed at 300, 500 and 700 °C and then subjected to various structural, morphological and optical investigations. The effect of the presence of capping agent and annealing on these properties was discussed. The phenomenon of phase transformation occurred during annealing. The optical band gap energies were found in the range 2.37–1.7 eV with respect to the annealing temperatures.     

The effect of complexing agent on crystal growth,structure and properties of nanostructured Cu_（2-x）S thin films

Thin films of Cu2 x S（x = 0, 1） were deposited on self-assembled, monolayer modified substrates in the copper–thiosulfate system with various concentrations of ethylene diamine tetraacetic acid（EDTA） at a low temperature of 70 8C. The thin films were characterized by means of X-ray diffraction（XRD）, X-ray photoelectron spectroscope（XPS）, field emission scanning electron microscopy（FESEM）, transmission electron microscopy（TEM）. The optical and photoelectrochemical（PEC） properties of the Cu2 x S semiconductor films were investigated by ultraviolet–visible（UV–vis） absorption spectroscopy and a three-electrode system. It is found that EDTA plays a key role in the process of Cu2 x S nanocrystals formation and growth. The compositions of the Cu2 x S nanocrystals varied from Cu2S（chalcocide） to Cu S（covellite） through adjusting the concentration of EDTA, which is used as a complexing agent to yield high-quality Cu2 x S films. The growth mechanisms of Cu2 x S nanocrystals with different EDTA concentrations are proposed and discussed in detail.     

Control of retention and fatigue-free characteristics in CaBi4Ti4O15 thin films prepared by chemical method

Ferroelectric CaBi₄Ti₄O₁₅ (CBTi144) thin films were deposited on Pt/Ti/SiO₂/Si substrates by the polymeric precursor method. The films present a single phase of layered-structured perovskite with polar axis orientation after annealing at 700 °C for 2 h in static air and oxygen atmosphere. The a/b-axis orientation of the ferroelectric film is considered to be associated with the preferred orientation of the Pt bottom electrode. It is noted that the films annealed in static air showed good polarization fatigue characteristics at least up to 10¹⁰ bipolar pulse cycles and excellent retention properties up to 10⁴ s. On the other hand, oxygen atmosphere seems to be crucial in the decrease of both, fatigue and retention characteristics of the capacitors. Independently of the applied electric field, the retained switchable polarization approached a nearly steady-state value after a retention time of 10 s.     

Chemical deposition of semiconducting cadmium selenide quantum dots in thin film form and investigation of their optical and electrical properties

Cadmium selenide quantum dots with cubic crystal structure are chemically deposited in thin film form using selenosulfate as a precursor for selenide ions and ammonia buffer with double role: as a ligand and as a pH value controller. The optical band gap energies of as-deposited and thermally treated cadmium selenide thin films, calculated within the framework of parabolic approximation for the dispersion relation, on the basis of equations which arise from the Fermi's golden rule for electronic transitions from valence to conduction band, are 2.08 and 1.77 eV, correspondingly. The blue shift of band gap energy of 0.34 eV for as-deposited thin films with respect to the bulk value is due to the quantum size effects (i.e., nanocrystals behave as quantum dots) and this finding is in agreement with the theoretical predictions. During the thermal treatment the nanocrystals are sintered, the increase of crystal size being in correlation with the decrease of band gap energy. The annealed thin films are practically non-quantized. From the resistance-temperature measurements, on the basis of the dependence of ln(R/Ω) vs 1/T in the region of intrinsic conduction, the thermal band gap energy (at 0 K) of 1.85 eV was calculated.     

Dielectric properties of Ca(Zr0.05Ti0.95)O3 thin films prepared by chemical solution deposition

Ca(Zr_0.05Ti_0.95)O₃ (CZT) thin films were grown on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by the soft chemical method. The films were deposited from spin-coating technique and annealed at 928 K for 4 h under oxygen atmosphere. CZT films present orthorhombic structure with a crack free and granular microstructure. Atomic force microscopy and field-emission scanning electron microscopy showed that CZT present grains with about 47 nm and thickness about 450 nm. Dielectric constant and dielectric loss of the films was approximately 210 at 100 kHz and 0.032 at 1 MHz. The Au/CZT/Pt capacitor shows a hysteresis loop with remnant polarization of , and coercive field of 18 kV/cm, at an applied voltage of 6 V. The leakage current density was about at 3 V. Dielectric constant-voltage curve is located at zero bias field suggesting the absence of internal electric fields.     

Structural,morphological, optical and third order nonlinear optical response of spin-coated NiO thin films: An effect of N doping

The present work deals with the deposition of NiO and Nitrogen (N)-doped NiO thin films by sol-gel spin coating technique. Structural, morphological, linear and non-linear optical characteristics of undoped and N-doped (1–15 wt%) NiO films were studied. From XRD measurements, it is evident that single phase nano crystalline NiO is formed for all doping concentrations. Surface morphology study shows that higher concentration of N doped NiO thin films were of high quality and EDX mapping confirmed the doping of Nitrogen in films. The Raman spectra of the studied films were analyzed over the range of 1400-200 cm⁻¹. The optical studies confirm that as doping increases, transparency of the film decreases (except at 10% N doping) and the band gap narrows. Nonlinear parameters such as refractive index and susceptibilities also depend on N dopant concentration. Z-scan studies viz., absorption index, nonlinear refractive index were carried out on undoped and N doped NiO samples and the results were matched with theoretical calculated values.     

Microstructure and electrical properties of BaTiO<Subscript>3</Subscript> and (Ba,Sr)TiO<Subscript>3</Subscript> ferroelectric thin films on nickel electrodes

Nickel thin films have been sputtered on standard Si/SiO₂ substrates with TiO₂ as an adhesive layer. The thermal stability of these substrates was analyzed. SEM images show an increase in grain size with annealing temperature. They were found to be stable till 800°C, beyond which the nickel layer disintegrated. These substrates were used for deposition of BaTiO₃ and (Ba,Sr)TiO₃ dielectric thin films under a reducing atmosphere. The dielectric thin films were processed with various pyrolysis and annealing temperatures in order to optimize the dielectric properties. Increased pyrolysis temperatures showed an increase in the grain size. Results on these nickelised substrates were finally compared with dielectric films deposited on platinized silicon substrates under identical conditions but crystallized in an oxygen atmosphere.     

Structural,chemical and nanomechanical investigations of SiC/polymeric a-C:H films deposited by reactive RF unbalanced magnetron sputtering

Amorphous carbon (or diamond-like carbon, DLC) films have shown a number of important properties usable for a wide range of applications for very thin coatings with low friction and good wear resistance. DLC films alloyed with (semi-)metals show some improved properties and can be deposited by various methods. Among those, the widely used magnetron sputtering of carbon targets is known to increase the number of defects in the films. Therefore, in this paper an alternative approach of depositing silicon-carbide-containing polymeric hydrogenated DLC films using unbalanced magnetron sputtering was investigated. The influence of the C₂H₂ precursor concentration in the deposition chamber on the chemical and structural properties of the deposited films was investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and elastic recoil detection analysis. Roughness, mechanical properties and scratch response of the films were evaluated with the help of atomic force microscopy and nanoindentation. The Raman spectra revealed a strong correlation of the film structure with the C₂H₂ concentration during deposition. A higher C₂H₂ flow rate results in an increase in SiC content and decrease in hydrogen content in the film. This in turn increases hardness and elastic modulus and decreases the ratio H/E and H³/E². The highest scratch resistance is exhibited by the film with the highest hardness, and the film having the highest overall sp³ bond content shows the highest elastic recovery during scratching.     

Structural and optical properties of Ga2O3:In films deposited on MgO (1 0 0) substrates by MOCVD

Ga₂O₃:In films with different indium (In) content x [x=In/(Ga+In) atomic ratio] have been deposited on MgO (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). Structural analyses revealed that the film deposited with actual In content (x′) of 0.09 was an epitaxial film and the films with x′=0.18 and 0.37 had mixed-phase structures of monoclinic Ga₂O₃ and bixbyite In₂O₃. The absolute average transmittance of the obtained films in the visible region exceeded 95%, and the band gap was in the range of 4.74-4.87 eV. Photoluminescence (PL) measurements were performed at room temperature, in which the visible luminescences were strong and could be seen by the naked eye. The strong emissions in the visible light region were proposed to originate from the gallium vacancies, oxygen deficiencies and other defects in these films.     

Structural,morphological, optical and sensing properties of SnSe and SnSe2 thin films as a gas sensing material

In this work, orthorhombic tin selenide thin films were grown onto three different substrates using an organophosphorus precursor (Ph₃PSe) via chemical vapor deposition. Structural, microstructural and morphological properties of the as-grown films were systematically investigated using XRD, ESEM and AFM respectively. Grain size, microstrain and dislocation were calculated and correlated with different factors. The effects of selenization temperature and substrate type on different film properties and gas sensing response of films deposited onto alumina substrates were investigated. XRD analysis reveals the appearance of a mixed phase as a function of temperature. Furthermore, substrate type plays a key role in the rate of appearance of each phase. EDAX analysis confirms the existence of the desired elements and detect the evaporation of selenium and the appearance of oxygen at higher temperatures. Atomic force microscopy (AFM) was used to investigate the surface topography of the grown thin films.Optical properties of the films grown onto glass and silicon substrates were studied. From the recorded optical data, a direct optical band gap in the range of 0.9–1.3 eV was obtained with an absorption coefficient α > 10⁴ cm⁻¹ throughout large spectral regions. Optical studies were remarkably affected by the obtained phase as well as the selenization temperature. Gas sensing properties of the samples deposited onto alumina substrates were examined as a new sensing material for detection of methane gas at different concentrations. SnSe sensors show high sensitivity, are reversible and exhibit fast response and recovery times compared to SnSe₂ sensors.     

Evaluation of a synergetic effect between Rh as permanent chemical modifier and acetylacetone as complexing agent in Sc determination in sediment slurry samples by ETAAS

In the present work, scandium was determined in sediment slurry samples (from three different rivers) by electrothermal atomic absorption spectrometry (ETAAS). Slurries were prepared by weighting 100 mg of dry sediment samples (≤53 μm particle sizes) and adding 6 ml of HCl:HNO₃:HF (3:1:2, v/v). Accurate results were only possible due to the synergetic effect between Rh as permanent chemical modifier and acetylacetone (Acac) as complexing agent. The same platform was used for 400 heating cycles. The performance of the chemical modification was evaluated by using scanning electron microscopy (SEM), synchrotron radiation X-ray fluorescence (SRXRF) and some figures of merit (precision and detectability). The best analytical conditions were attained using 1500 and 2550 °C as pyrolysis and atomization temperatures. The scandium content in the liquid phase of the slurries ranged from 61 to 73%, thus indicating, in this study, that both liquid and solid phases play an important role in slurry analyses. An amount of 5.0–20.0 μg l⁻¹ Sc linear range as well as LOD and LOQ of 0.19 and 0.62 μg l⁻¹, respectively, were obtained under these conditions. The accuracy was checked by using microwave-assisted decomposition, and the results compared to those obtained with the proposed methodology (slurry analysis). By checking both sets of the results, there is no statistical difference at the 95% confidence levels.     

The influence of diffusion temperature on the structural, optical and magnetic properties of manganese-doped zinc oxysulfide thin films

We investigated the structural, optical and magnetic properties of Mn-doped zinc oxysulfide films. Zn(O,S) films were deposited by a spray pyrolysis method on glass substrate. A thin Mn layer evaporated on these films served as the source for the diffusion doping. The XRD pattern of undoped films revealed the presence of two wurtzite phases corresponding to ZnS and ZnO with a strong preferred orientation along the ZnS (0 0 2) hexagonal plane direction. SEM showed a similar surface morphology for the undoped and Mn-doped films, displaying regular arrays of hexagonal micro-rods perpendicular to the substrate. The optical transmission measurements showed that both undoped and Mn diffusion-doped films had a low average transmittance less than about 10%. The gap energy is decreased from 3.42 to 3.33 eV upon annealing at 400 °C. Photoluminescence studies at 300 K show that the incorporation of manganese leads to a decrease of deep level band intensity compared to undoped sample. Clear ferromagnetic loops were observed for the Mn-doped Zn(O,S) films, which might be due to the presence of point defects.     

Structural,optical and secondary electron emission properties of diamond like carbon thin films deposited by pulsed-DC plasma CVD technique

Plasma enhanced chemical vapor deposition (PECVD) technique using pulsed-DC power supply was used to fabricate diamond like carbon (DLC) films at deposition rates as high as 110 nm/min. The DLC films deposited by pulsed-DC and DC based power supplies under different gas flow ratios were studied for their suitability as dielectric layer coatings in plasma display panels (PDPs). The effect of deposition parameters on the properties of the DLC films were studied using Fourier transform infra-red spectroscopy (FTIR) and spectroscopic ellipsometry (SE). FTIR reveals that higher hydrogen dilution in gas mixture leads to higher sp³ content. SE studies in wide spectral range were analyzed using Tauc-Lorentz model dielectric function. A rise in the extracted refractive index was seen on increasing the H₂ content in the feed gas, thus resulting in optically denser films. Secondary electron emission coefficient (γ) was measured in the films deposited by the DC and pulsed-DC based PECVD. Firing voltage in the DLC samples was found to have very low variation in the operating pressure range used in commercial PDPs, suggesting possibility of enhanced long term reliability of DLC coatings in future PDP applications.     

Dielectric and optical properties of BaTiO<Subscript>3</Subscript> thin films prepared by low-temperature process

Barium titanate (BaTiO₃) thin films have been prepared by low temperature processing on Pt/Ti/SiO₂/Si substrates using sol-gel-hydrothermal (SGHT) technique, which combined the conventional sol-gel process and hydrothermal method. X-ray diffraction analysis showed that the barium titanate thin films are polycrystalline. As-reacted barium titanate films grown on Pt(111)/Ti/SiO₂/Si(100) substrates had a dielectric constant (ε) and loss tangent (tanδ) of 80 and 0.05 at 1 MHz, respectively. The optical constants including refractive index n, extinction coefficient k, and absorption coefficient α of the barium titanate thin films in the wavelength range of 2.5–12.6 μm were obtained by infrared spectroscopic ellipsometry.     

Chemical modifications of Pb(Zr<Subscript>0.3</Subscript>,Ti<Subscript>0.7</Subscript>)O<Subscript>3</Subscript> precursor solutions and their influence on the morphological and electrical properties of the resulting thin films

Tetragonal lead zirconate titanate thin films on platinized silicon wafers have been prepared from chemically different precursor solutions by chemical solution deposition. Literature known routes have been evaluated and an optimized standard process has been developed leading to Pb(Zr_0.3,Ti_0.7)O₃ films with a high degree of (111) orientation which consequently shows square hysteris loops with Pr values of 34 μC/cm². Other solvents, different alkoxides of the transition metals, and different carboxylates of lead have been systematically introduced in this standard process and their influence on the final morphological and electrical properties has been studied. It has been found that the use of lead (II) propionate and titanium tetra n-butoxide for solution synthesis leads to a decrease of the remanent polarization of ∼50%. Furthermore the reaction atmosphere after spinning and during the pyrolysis has been investigated. Increased ambient humidity after the spin coating process also caused a significant deterioration of the final film properties. The findings have been explained in terms of a hindered formation of the (111) texture promoting intermediate Pt _x Pb phase.     

Optical constants,dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering

BiVO₄ thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO₄ target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO₄ target material was prepared through solid-state reaction method by heating Bi₂O₃ and V₂O₅ mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV–Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO₄ thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO₄ thin films have been investigated in detail. Dielectric properties of the BiVO₄ thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO₄ thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO₄.     

Influence of a chelating agent on optical and morphological properties of YAG: Tb3+ phosphors prepared by the sol-gel process

Chemical modifications are widely used in sol-gel method in order to control the mechanisms involved during hydrolysis-condensation and polymerization processes. In this paper, the influence of acetylaceton (acac) used as a chelating agent in the synthesis of undoped and Tb³⁺-doped Y₃Al₅O₁₂ (YAG) powders and sols, has been investigated. Its effects on samples crystallization and morphology have been studied by means of high-temperature X-ray diffraction (HTXRD), thermal analysis (DTA-TG), infrared (IR) and Raman spectroscopies, transmission electron microscopy (TEM) and laser granulometry. It was shown that acetylaceton enhances the structural organization of YAG compound. Moreover, acac-modified powders exhibit much smaller particles than unmodified ones. Optical study has also been achieved on doped samples. Laser induced luminescence spectra and fluorescence decays of Tb³⁺ ions show that acac affects the optical properties of YAG: Tb³⁺ for any types of samples (sol, xerogel or crystallized powder). Powders demonstrate a better luminescence yield without acetylaceton, whereas stabilized sols are more efficient than unstabilized ones.     

Use of ICP and XAS to determine the enhancement of gold phytoextraction by <Emphasis Type="Italic">Chilopsis linearis</Emphasis> using thiocyanate as a complexing agent

Under natural conditions gold has low solubility that reduces its bioavailability, a critical factor for phytoextraction. Researchers have found that phytoextraction can be improved by using synthetic chelating agents. Preliminary studies have shown that desert willow (Chilopsis linearis), a common inhabitant of the Chihuahuan Desert, is able to extract gold from a gold-enriched medium. The objective of the present study was to determine the ability of thiocyanate to enhance the gold-uptake capacity of C. linearis. Seedlings of this plant were exposed to the following hydroponics treatment: (1) 5 mg Au L^–1 (2.5×10^–5 mol L^–1), (2) 5 mg Au L^–1+10^–5 mol L^–1 NH₄SCN, (3) 5 mg Au L^–1+5×10^–5 mol L^–1 NH₄SCN, and (4) 5 mg Au L^–1+10^–4 mol L^–1 NH₄SCN. Each treatment had its respective control. After 2 weeks we determined the effect of the treatment on plant growth and gold content by inductively coupled plasma–optical emission spectroscopy (ICP–OES). No signs of shoot-growth inhibition were observed at any NH₄SCN treatment level. The ICP–OES analysis showed that addition of 10^–4 mol L^–1 NH₄SCN increased the concentration of gold by about 595, 396, and 467% in roots, stems, and leaves, respectively. X-ray absorption spectroscopy (XAS) studies showed that the oxidation state of gold was Au(0) and that gold nanoparticles were formed inside the plants.     

Effects of sputtering current on the bonding structure and mechanical properties of diamond‐like carbon films deposited by MFPUMST

Diamond‐like carbon (DLC) films on glass wafers were produced by middle frequency pulsed unbalanced magnetron sputtering technique (MFPUMST) at different sputtering current. The chemical bonding of carbon characterized by Raman spectroscopy and X‐ray photoelectron spectroscopy (XPS) show that the sp³ fraction in DLC films increases with increasing sputtering current from 100 to 300 mA, and then decreases above 300 mA. Mechanical properties like nano‐hardness and elastic recovery for these films under different sputtering currents analyzed by a nano‐indentation technique show the same tendency that nano‐hardness and elastic recovery increase with increasing sputtering current from 100 to 300 mA, and then decrease with increasing sputtering current from 300 to 400 mA. These results indicate that the sp³ fraction in the prepared DLC films is directly related to nano‐hardness and elastic recovery. The results shown above indicate that the parameter of the preparation—sputtering current has a strong influence on the bonding configuration of the deposited DLC films. The mechanism of sputtering current on the sp³ fraction is discussed in this paper. Copyright © 2009 John Wiley & Sons, Ltd.     

Electrical,optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnNx thin films

We present a study of electrical and optical properties of nitrogen‐doped tin oxide thin films deposited on glass by the DC Magnetron Sputtering method. The deposition conditions to obtain p‐type thin films were a relative partial pressure between 7% and 11% (N₂ and/or O₂), a total working pressure of 1.8 mTorr and a plasma power of 30 W. The deposited thin films were oxidized after annealing at 250°C for 30 minutes. X‐ray diffraction results showed that the as‐deposited thin films exhibit a Sn tetragonal structure, and after annealing, they showed SnO tetragonal structure. X‐ray photoelectron spectroscopy results showed the presence of nitrogen in the samples before and after annealing. The measured physical parameters of the thin films were optical band gap between 1.92 and 2.68 eV, resistivity between 0.52 and 5.46 Ωcm, a concentration of p‐type carriers between 10¹⁸ and 10¹⁹ cm^?3, and a Hall mobility between 0.1 and 1.94 cm²V^?1s^?1. These thin films were used to fabricate p‐type thin film transistors.