Ga2O3／HZSM—5催化剂的XRD,XPS和TPR研究

利用ＸＲＤ、ＸＰＳ、ＴＰＲ等技术对Ｇａ２Ｏ３／ＨＺＳＭ－５催化剂进行表征，结果表明，催化剂中镓组分以聚集态和分散态的形式存在，其中聚集态中α－Ｇａ２Ｏ３在一定条件下可转化为β－Ｇａ２Ｏ３；分散态又可分为游离Ｇａ２Ｏ３和与ＨＺＳＭ－５产生相互作用的镓组分，催化剂预处理条件及反应一再生过程对镓的分布及状态有较大影响。     

Ga2O3薄膜的光致发光及激光烧蚀产物的分布

采用脉冲激光沉积技术在氧气氛中制备了Ga2O3薄膜。X射线衍射表明薄膜属于β单斜晶系,薄膜的颗粒在纳米量级;原子力显微镜显示随着氧气压强的增加,薄膜颗粒增大。测定了薄膜的光致发光,发现沉积时氧气压强的增加可以提高 纯Ga2O3薄膜的发光强度,且峰位红移。Ga2O3靶物质中掺杂少量的CeO2后所得到的薄膜,其发光强度可以明显地增加。此外,还利用发光光谱技术研究了由激光 烧蚀所产生的羽状物中Ga原子或离子的氧化反应。     

Preparation, characterization and gas-sensitive properties of nano-crystalline Cr2O3Fe2O3 mixed oxides

A series of Fe₂-_xCr_xO₃(x = 0, 0.4, 0.8, 1.2, 1.6, 2.0) mixed oxides have been prepared with the chemical coprecipitation method and characterized by specific surface area, transmission electron microscopy (TEM), powder X-ray diffraction (XRD), IR and Mössbauer spectroscopy. Single-phase Fe-Cr mixed oxide nano-crystalline powders with corundum structure are obtained, and the results of the five characterization methods are well accordant with each other. Furthermore, gas-sensitive properties of the sensors made of the oxide powders have been studied.     

Effects of the crystalline structure of Ga2O3 on the photocatalytic activity for CO production from CO2

Ga₂O₃ samples with different crystalline structures were prepared by calcination of a gallium nitrate powder around 800 K. Ga₂O₃ samples with mixed phases of γ and β showed high photocatalytic activity for CO production from CO₂ reduction with water, and the activity was even higher than that for an Ag-loaded β-Ga₂O_3. The photocatalytic activity increased with time. The increase was attributed to the appearance of GaOOH resulting from the interaction of Ga₂O₃ with water during the reaction as revealed by XRD and XPS analyses. In situ FT-IR measurements revealed that bicarbonates and bidentate carbonate species were adsorbed on GaOOH. Therefore, the increase of the photocatalytic activity with time would be derived from the formation of GaOOH phase on the γ-Ga₂O₃ and β-Ga₂O₃ sample.     

Optical and electrical properties of copper-doped nano-crystallite CdO thin films

Thin films of Cu-doped CdO (CdO:Cu) with different Cu% content were prepared in high vacuum on glass and Si substrates. The samples were characterised X-ray diffraction (XRD), optical spectroscopy, scanning electron microscope (SEM), and dc-electrical measurements. The XRD study reveals the formation of single crystalline phase CdO:Cu of CdO structure with a preferential [111] orientation. However, with increasing of Cu% content, the crystal structure was gradually deteriorated. SEM study shows formation of granular structure with rice shape grains of average size ∼500 nm. The optical study shows that Cu doping increased the films transparency with a slight blueshift for the bandgap. The calculated optical constants for pure and Cu-doped CdO were analysed with Forouhi–Bloomer (FB), Wemple–Didomenico (WD), and Spitzer–Fan (SF) models. Good agreements were obtained between electrical and optical (through SF model) measurements. The electrical measurements show that the utmost enhancement in mobility (82.5 cm²/V s) and conductivity (1428.6 S/cm) was found with 2.3% Cu sample. The optoelectronic study was analysed through the available BGW and BGN models that show close theoretical to the experimental results. In general, the films of CdO prepared with light Cu doping have optical and electrical characteristics suitable for various applications in material sciences and optoelectronic devices.     

Structural, energetic, electronic, bonding, and vibrational properties of Ga3O, Ga3O2, Ga3O3, Ga2O3, and GaO3 clusters

The results of density functional theory based calculations on Ga3O, Ga3O2, Ga3O3, Ga2O3, and GaO3 clusters are reported here. A preference for planar arrangement of the constituent atoms maximizing the ionic interactions is found in the ground state of the clusters considered. The sequential oxidation of the metal-excess clusters increases the binding energy, but the sequential removal of a metal atom from the oxygen-excess clusters decreases the binding energy. The increase in the oxygen to metal ratio in these clusters is accompanied by increase in both electron affinity and ionization potential. The ionization induced structural distortions in the neutral clusters are relatively small, except those for Ga3O2. In anionic (cationic) clusters, the added (ionized) electron is shared by the Ga atoms, except in the case of GaO3. The vibrational frequencies and charge density analysis reveal the importance of the ionic Ga-O bond in stabilizing the gallium oxide clusters considered in this study.     

CO2消除镓氢物种提升Ga2O3/SiO2丙烷脱氢反应性能

丙烯是一种基础石油化工原料,在全球石油化工生产中占有重要地位.以丙烯为原料可生产许多石油化学品,如丙烯腈、环氧丙烷和聚丙烯等.经济快速发展带动了丙烯下游衍生物产业的发展,进而增加了对丙烯的需求量,因此尽管近年来丙烯产能逐年上升,丙烯产量与需求量之间仍存在较大缺口.传统的丙烯生产路径主要是石脑油蒸汽裂解和重质油催化裂化.然而,随着石油资源的短缺和页岩气的发展,丙烷脱氢作为一种直接生产丙烯的技术,成为丙烯生产领域的研究热点.近年来,镓基催化剂由于其较少的积碳和较高的催化活性受到了越来越多的关注.镓基催化剂在丙烷脱氢反应中的活性位点也得到了更多研究.在镓基催化剂中,镓氧化物具有丙烷脱氢活性,而丙烷脱氢反应过程中产生的镓氢(Gaδ+-Hx)物种不稳定,且会造成丙烯选择性降低,导致丙烯产率降低.因此,反应过程中原位消除镓氢物种对于提高丙烷脱氢反应性能具有非常重要的意义.本文将CO2作为温和氧化剂引入Ga2O3/SiO2催化的丙烷脱氢反应中,促进不利的中间产物Gaδ+-Hx的转化,再生丙烷脱氢的活性位点Ga3+-O,从而提高催化性能.原位红外光谱实验结果表明,CO2可有效消除Gaδ+-Hx.在不同反应温度下,引入CO2可显著提高Ga2O3/SiO2催化丙烷脱氢的转化率,特别是选择性.反应4.5 h时,3Ga2O3/SiO2催化丙烷脱氢的选择性从93％降低到89％;引入CO2后,丙烯选择性可提高到并维持在93％.Ga2O3负载量由3 wt％提高到10 wt％时,引入CO2仍可促进反应性能.当CO2:C3H8由0.5增加到3时,引入CO2带来的反应性能提升基本相同.同时,引入CO2大大减少反应过程中产生的积碳.本文对镓基催化剂丙烷脱氢活性中心的认识和提高丙烷脱氢反应性能提供了新方向.     

Electrochemical properties of tetravalent Ti-doped spinel LiMn2O4

Ti-doped spinel LiMn₂O₄ is synthesized by solid-state reaction. The X-ray photoelectron spectroscopy and X-ray diffraction analysis indicate that the structure of the doped sample is Li( Mn^{3 +} Mn_{1 - x} ^{4 +} Ti_x^{4 +} )O₄ {\hbox{Li}}\left( {{\hbox{M}}{{\hbox{n}}^{3 + }}{\hbox{Mn}}_{1 - x\,}^{4 + }{\hbox{Ti}}_x^{4 + }} \right){\hbox{O}}{}_4 . The first principle-based calculation shows that the lattice energy increases as Ti doping content increases, which indicates that Ti doping reinforces the stability of the spinel structure. The galvanostatic charge–discharge results show that the doped sample LiMn_1.97Ti_0.03O₄ exhibits maximum discharge capacity of 135.7 mAh g⁻¹ (C/2 rate). Moreover, after 70 cycles, the capacity retention of LiMn_1.97Ti_0.03O₄ is 95.0% while the undoped sample LiMn₂O₄ shows only 84.6% retention under the same condition. Additionally, as charge–discharge rate increases to 12C, the doped sample delivers the capacity of 107 mAh g⁻¹, which is much higher than that of the undoped sample of only 82 mAh g⁻¹. The significantly enhanced capacity retention and rate capability are attributed to the more stable spinel structure, higher ion diffusion coefficient, and lower charge transfer resistance of the Ti-doped spinel.     

AACVD of WO3 thin films from W(O)(OPri)3[O(CH2)nNMe2] (n = 2, 3)

Monomeric tungsten oxo‐aminoalkoxides W(O)(OPrⁱ)₃(L) [L = O(CH₂)_nNMe₂; n = 2 (dmae, 1) and 3 (dmap, 2 )] were synthesized by alcohol exchange with [W(O)(OPrⁱ)₄]₂ and characterized spectroscopically. 1, 2 and [W(O)(OPrⁱ)₄]₂ were used as precursors for the aerosol‐assisted chemical vapour deposition of WO₃ thin films, which were characterized by glancing angle X‐ray diffraction, SEM and transmission‐reflectance measurements. Copyright © 2008 John Wiley & Sons, Ltd.     

Preparation and electrical properties of ultrafine Ga2O3 nanowires

Uniform and well-crystallized beta-Ga2O3 nanowires are prepared by reacting metal Ga with water vapor based on the vapor-liquid-solid (VLS) mechanism. Electron microscopy studies show that the nanowires have diameters ranging from 10 to 40 nm and lengths up to tens of micrometers. The contact properties of individual Ga2O3 nanowires with Pt or Au/Ti electrodes are studied, respectively, finding that Pt can form Schottky-barrier junctions and Au/Ti is advantageous to fabricate ohmic contacts with individual Ga2O3 nanowires. In ambient air, the conductivity of the Ga2O3 nanowires is about 1 (Omega.m)-1, while with adsorption of NH3 (or NO2) molecules, the conductivity can increase (or decrease) dramatically at room temperature. The as-grown Ga2O3 nanowires have the properties of an n-type semiconductor.     

Ga2O3-La2O3-Yb2O3-Er2O3(HO2O3)体系光谱性质的研究

根据稀土离子能级的特点,对Ga2O3-La2O3-Yb2O3-Er2O3(HO2O3)体系的光谱性质进行了探讨,发现它们有二类发光性质:Stokes发光和反Stokes发光,研究了发光强度和发射波长与掺杂离子的依赖关系,观察到由能量的共振转移引起的荧光浓度猝灭现象,并取得了最大发光强度时的掺杂离子浓度和一些规律性结果.     

Ga_2O_3改性Cu/SiO_2催化剂降低水蒸气催化重整产物中CO选择性

采用蒸氨法制备的xGa-Cu/SiO_2催化剂可以同时产生Cu~0和Cu~+物种,加入Ga后催化剂的二甲醚水蒸气重整反应活性和选择性都有很大程度的提高,其中5Ga-Cu/SiO_2催化剂在380°C时的二甲醚转化率为99.8%,CO选择性为4.8%。通过透射电子显微镜(TEM),氢气-程序升温还原(H_2-TPR),N_2O滴定和X射线光电子能谱(XPS)结果发现,Ga与Cu物种之间的相互作用,一方面可以提高Cu物种的分散度,另一方面可以促进Cu~+的形成。通过改变Ga负载量可以调变Cu~+/(Cu~0+Cu~+)的比例,氢气的时空收率结果表明,Ga通过调变Cu~+/(Cu~0+Cu~+)影响催化活性,并且当Cu~+/(Cu~0+Cu~+)=0.5时,氢气时空收率达到最大值为5.02mol·g~(-1)·h~(-1)。程序升温表面反应(TPSR)结果表明,Ga通过促进水气变换反应提高反应产物CO_2选择性。     

The effect of Al2O3-coating coverage on the electrochemical properties in LiCoO2 thin films

The electrochemical properties of nanoscale Al₂O₃-coated LiCoO₂ thin films were examined as a function of the coating coverage. Al₂O₃-coated LiCoO₂ films showed enhanced cycle-life performance with increasing degree of coating coverage, which was attributed to the suppression of Co dissolution and F⁻ concentration in the electrolyte. Moreover, an Al₂O₃-coating layer with partial coverage clearly improved the electrochemical properties, even at 60 °C or with a water-contaminated electrolyte. Even though metal-oxide coating on LiCoO₂ has been actively investigated, the mechanisms of nanoscale coating have yet to be clearly identified. In this article, surface analysis suggested that the Al₂O₃-coating layer had transformed to an AlF₃ ∙3H₂O layer during cycling, which inhibited the generation of HF by scavenging H₂O molecules present in the electrolyte.     

Influence of thermal annealing on the structural and optical properties of maghemite (γ‐Fe2O3) nanoparticle thin films

In this study, maghemite (γ‐Fe₂O₃) nanoparticles were initially synthesized via chemical co‐precipitation and then deposited by spray pyrolysis as thin films on white glass substrates. The thin films were annealed for 8 h at 400, 450, 500, 550, and 600 °C in an oven. The structural studies of maghemite nanoparticles were carried out using X‐ray diffractometer. Structural properties that we investigated by X‐ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, SEM, and Energy dispersive X‐ray analysis (EDS). Optical properties of the samples were also investigated by ultraviolet‐visible (UV–vis) spectroscopy. The results showed that maghemite nanoparticles have crystalline structure with domain that increases in size with increasing annealing temperature. The optical band gap values were found to reduce from 2.9 to 2.4 eV with increase in annealing temperature. Copyright © 2015 John Wiley & Sons, Ltd.     

Evaluation of the structural,optical and electrical properties of AZO thin films prepared by chemical bath deposition for optoelectronics

Aluminum doped zinc oxide (AZO) thin films for electrode applications were deposited on glass substrates using chemical bath deposition (CBD) method. The influence of deposition time on the structural, morphological, and opto-electrical properties of AZO films were investigated. Structural studies confirmed that all the deposited films were hexagonal wurtzite structure with polycrystalline nature and exhibited (002) preferential orientation. There is no other impurity phases were detected for different deposition time. Surface morphological images shows the spherically shaped grains are uniformly arranged on to the entire film surface. The EDS spectrum confirms the presence of Zn, O and Al elements in deposited AZO film. The observed optical transmittance is high (87%) in the visible region, and the calculated band gap value is 3.27 eV. In this study, the transmittance value is decreased with increasing deposition time. The room temperature PL spectrum exposed that AZO thin film deposited at (60 min) has good optical quality with less defect density. The minimum electrical resistivity and maximum carrier concentration values were observed as 8.53 × 10⁻³(Ω cm) and 3.53 × 10¹⁸ cm⁻³ for 60 min deposited film, respectively. The obtained figure of merit (ϕ) value 3.05 × 10⁻³(Ω/sq)^{- 1} is suggested for an optoelectronic device.