Molding of soft glass refraction mini lens with hot embossing process for broadband infrared transmission systems

In this paper we report on the development of small-diameter lenses in soft glass with transmission in infrared till 5 μm using hot embossing method. A fused silica stamps and in-house synthesized tungsten–tellurium–niobate and lead–bismuth–galate glasses are used for replication. Optimization process of hot embossing is presented. Optical properties of replicated lenses were characterized. Resolution of 50 lp/mm is obtained.     

The fabrication of aspherical microlenses using focused ion-beam techniques

Aspheric lenses are the most common method for correcting for spherical aberrations but, in microlens production, highly-controlled lens profiles are hard to achieve. We demonstrate a technique for creating bespoke, highly-accurate aspheric or spherical profile silicon microlens moulds, of almost any footprint, using focused ion-beam milling. Along with this, we present a method of removing induced ion-beam damage in silicon, via a hydrofluoric acid etch, helping to recover the surface's optical and chemical properties.In this paper, we demonstrate that our milled and etched moulds have a roughness of 4.0–4.1 nm, meaning they scatter less than 1% of light, down to wavelengths of 51 nm, showing that the moulds are suitable to make lenses that are able to handle light from UV up to infra-red.Using empirical experiments and computer simulations, we show that increasing the ion-dose when milling increases the amount of gallium a hydrofluoric acid etch can remove, by increasing the degree of amorphisation within the surface. For doses above 3000 μC/cm² this restores previous surface properties, reducing adhesion to the mould, allowing for a cleaner release and enabling higher quality lenses to be made.Our technique is used to make aspheric microlenses of down to 3 μm in size, but with a potential to make lenses smaller than 1 μm.     

Cross-shaped metal–semiconductor–metal plasmonic crystal for terahertz modulator

The transmission and tuning properties of a cross-shaped plasmonic crystal based on periodic metal–semiconductor–metal (MSM) structures have been investigated in the terahertz (THz) regime. According to the mode analysis, we find that the different resonance modes in the plasmonic crystal show the different changes when this device is actively controlled by the carrier injection of the MSM structures. The longitudinal modes disappear, while the horizontal mode moves to a higher frequency. The former leads to an intensity modulation at 0.5 THz and 1.1 THz when the groove depth h = 60 μm, and the later leads to a band blue-shift from 1.325 THz to 1.38 THz. These results will be applied to THz modulation and tunable filtering.     

Cascaded continuous-wave singly resonant optical parametric oscillator pumped by a single-frequency fiber laser

We present a cascaded continuous-wave singly resonant optical parametric oscillator (SRO) delivering idler output in mid-IR and terahertz frequency range. The SRO was pumped by an ytterbium-doped fiber laser with 27 W linear polarization pump powers, and based on periodically poled MgO:LiNbO₃ crystal (PPMgLN) in two-mirror linear cavity. The PPMgLN is 50 mm long with 29.5 μm period. The idler power output at 3811 nm was obtained 2.6 W. The additional spectral components that have been attributed to cascaded optical parametric processes are described at increasing pump levels. Besides the initial signal component at about 1476.8 nm, further generated wavelengths with frequency shifts about 47 cm^?1, 94 cm^?1 and 104 cm^?1 were observed. It was speculated that the idler waves lie in the terahertz (THz) domain from the observed results.     

Development of an efficient coherent optical source at 6.04 μm

Efficiency as high as 26% is obtained for generation of mid-infrared radiation at 6.04 μm by frequency doubling of ammonia laser emission at 12.08 μm in a 15 mm long type-I cut AgGaSe₂ crystal. The NH₃ laser used for this work is optically pumped by a commercial TEA CO₂ laser operating on 9.22 μm and produces pulsed output of ∼210 mJ with a duration of ∼200 ns at 12.08 μm. The generated radiation at 6.04 μm is separated out from the residual radiation at 12.08 μm by exploiting the principle of polarization dependent diffraction of reflection grating.     

Optimization of microcrystalline silicon thin film solar cell isolation processing parameters using ultraviolet laser

This study used ultraviolet laser to perform the microcrystalline silicon thin film solar cell isolation scribing process, and applied the Taguchi method and an L₁₈ orthogonal array to plan the experiment. The isolation scribing materials included ZnO:Al, AZO transparent conductive film with a thickness of 200 nm, microcrystalline silicon thin film at 38% crystallinity and of thickness of 500 nm, and the aluminum back contact layer with a thickness of 300 nm. The main objective was to ensure the success of isolation scribing. After laser scribing isolation, using the minimum scribing line width, the flattest trough bottom, and the minimum processing edge surface bumps as the quality characteristics, this study performed main effect analysis and applied the ANOVA (analysis of variance) theory of the Taguchi method to identify the single quality optimal parameter. It then employed the hierarchical structure of the AHP (analytic hierarchy process) theory to establish the positive contrast matrix. After consistency verification, global weight calculation, and priority sequencing, the optimal multi-attribute parameters were obtained. Finally, the experimental results were verified by a Taguchi confirmation experiment and confidence interval calculation. The minimum scribing line width of AZO (200 nm) was 45.6 μm, the minimum scribing line width of the microcrystalline silicon (at 38% crystallinity) was 50.63 μm and the minimum line width of the aluminum thin film (300 nm) was 30.96 μm. The confirmation experiment results were within the 95% confidence interval, verifying that using ultraviolet laser in the isolation scribing process for microcrystalline silicon thin film solar cell has high reproducibility.     

Design and VNA-measurement of coplanar waveguide (CPW) on benzocyclobutene (BCB) at THz frequencies

The low permittivity and the low loss tangent of the benzocyclobutene polymer (BCB) offers to coplanar waveguides (CPW) a low dispersive propagation properties at THz frequency. These transmission lines have been designed, modeled with a three dimensional (3D) solver of Maxwell equations based on finite element method (FEM) from 20 to 1000 GHz at various characteristic impedances (Z_c). Their dispersion and losses (radiation, conduction and dielectric) have been investigated separately versus the waveguide size, the nature of the substrate (dielectric or semiconductor) to optimize the THz signal propagation. Monomode CPW on BCB numerically designed for various Z_c were realized and measured with vector network analyzer (VNA). S-parameters of CPW are de-embedded by optimization of the accesses’ model. A good agreement is found between experimental and numerical results with low attenuation constants of 2.7 dB/mm and 3.5 dB/mm at 400 GHz and 500 GHz, respectively.     

Photovoltaic properties of black silicon microstructured by femtosecond pulsed laser

Prototype devices based on black silicon have been fabricated by microstructuring 250 μm thick multicrystalline n doped silicon wafers using femtosecond pulsed laser in ambient gas of SF₆ to measure its photovoltaic properties. The enhanced optical absorption of black silicon extends across the visible region and all the black silicons prepared in this work exhibit enhanced optical absorption close to 90% from 300 nm to 800 nm. The highest open-circuit voltage (V_oc) and short-circuit current (I_sc) under the illumination of He–Ne continuous laser at 632.8 nm were measured to be 53.3 mV and 0.11 mA, respectively at a maximum power conversion efficiency of 1.44%. Upon excitation with He–Ne continuous laser at 632.8 nm, external quantum efficiency (EQE) of black silicon as high as 112.9% has also been observed. Development of black silicon for photovoltaic purposes could open up a new perspective in achieving high efficient silicon-based solar cell by means of the enhanced optical absorption in the visible region. The current–voltage characteristic and photo responsivity of these prototype devices fabricated with microstructured silicon were also investigated.     

Pump tuned wide tunable noncritically phase-matched ZnGeP2 narrow line width optical parametric oscillator

A line tunable singly resonant noncritically phase matched narrow band width ZnGeP₂ (ZGP) optical parametric oscillator pumped by the output idler radiation from a KTA OPO based on a 20 mm long KTA crystal pumped from a Q-switched Gaussian shaped Nd:YAG laser beam with a grating having grooves density 85 lines/mm has been demonstrated in the spectral ranges of 3–7 μm. The measured threshold of oscillation energy was 10 μJ. The conversion efficiency was 20.5% and slope efficiency of the ZGP OPO was 20% using a 23 mm long ZGP crystal at 26 mm cavity length. Line width of the generated infrared radiation from ZGP OPO was 37–60 nm.     

Reactivity and diffusion between La0.8Sr0.2MnO3 and ZrO2 at interfaces in SOFC cores by TEM analyses on FIB samples

In this paper, we investigate the diffusion and reactivity at the interface between the electrolyte (YSZ) and the cathode (LSM) of planar SOFC single cells by Analytical and High Resolution Transmission Microscopy. Cells were obtained via an aqueous tape-casting process allowing casting the three layers (cathode, electrolyte, anode [Ni-YSZ]) in a single operation. To allow the cell to function at intermediate temperatures (750–850 °C), the final electrolyte thickness after co-sintering at 1350 °C must range between 40 μm and 50 μm. As-sintered cells as well as cells that have been operated at 850 °C have been considered here; it is shown that the electrical performances were one order of magnitude less than expected and that they deteriorated quickly under operating conditions.In order to explain this behavior, we carried out analytical transmission electron microcopy. To obtain precisely located chemical and structural information, we used the “H-Shape” as well as the Lift Out FIB (Focused Ion Beam) techniques to extract 5 × 10 × 0.1 μm TEM samples; additional High Resolution characterization was carried out at interfaces between LSM and YSZ grains on standard ion-milled samples. We showed that the co-sintering temperature (1350 °C) was responsible for some diffusion of manganese through the electrolyte and the cathode, leading then to the rise of a significant electronic conduction and to the drop off of the ionic conductivity, and accounts for the germination and growth of the resistive pyrochlore phase La₂Zr₂O₇. Operating the cell at 850 °C do not aggravate these phenomena, but rather alters the anode microstructure.     

A long-range hybrid THz plasmonic waveguide with low attenuation loss

Numerical solutions are obtained for the proposed novel hybrid terahertz plasmonic waveguide structure, namely the silicon metal silicon (SMS) waveguide. It is shown that the SMS waveguide can overcome the diffraction limit while still maintaining a sizeable propagation length. The geometric dependence of the mode characteristics of this structure is analyzed in detail, showing strong confinement and low loss with propagation lengths exceeding 14 mm at normalized mode areas of 1.72 × 10⁻². By using the FEM method (Comsol), the guiding properties of the hybrid terahertz surface plasmon polariton (HTSPP) waveguide are numerically analyzed at the THz frequency, and a combination of double-structured comparisons of the best features of the terahertz plasmonic waveguide is made. Depending on the height used and how the mode confinement is measured, various modal designs, such as double microwire structures, are developed. The structures indicate that we verified the possibility of low attenuation loss of hybrid THz plasmonics propagation. The effective mode area A_eff, energy distribution, and propagation length L_p versus height for waveguides with Si microwire and SiO₂ are shown. The numerical calculation results reveal a potential for use in applications such as optical force in trapping and transporting biomolecules, and in high-density integrated circuits.     

Picosecond laser cutting and drilling of thin flex glass

We investigate the feasibility of cutting and drilling thin flex glass (TFG) substrates using a picosecond laser operating at wavelengths of 1030 nm, 515 nm and 343 nm. 50 μm and 100 μm thick AF32^®Eco Thin Glass (Schott AG) sheets are used. The laser processing parameters such as the wavelength, pulse energy, pulse repetition frequency, scan speed and the number of laser passes which are necessary to perform through a cut or to drill a borehole in the TFG substrate are studied in detail. Our results show that the highest effective cutting speeds (220 mm/s for a 50 μm thick TFG substrate and 74 mm/s for a 100 μm thick TFG substrate) are obtained with the 1030 nm wavelength, whereas the 343 nm wavelength provides the best quality cuts. The 515 nm wavelength, meanwhile, can be used to provide relatively good laser cut quality with heat affected zones (HAZ) of <25 μm for 50 μm TFG and <40 μm for 100 μm TFG with cutting speeds of 100 mm/s and 28.5 mm/s, respectively. The 343 nm and 515 nm wavelengths can also be used for drilling micro-holes (with inlet diameters of ⩽75 µm) in the 100 μm TFG substrate with speeds of up to 2 holes per second (using 343 nm) and 8 holes per second (using 515 nm). Optical microscope and SEM images of the cuts and micro-holes are presented.     

Quadratic detection with two-photon quantum well infrared photodetectors

Two-photon quantum well infrared photodetectors (QWIPs) involving three equidistant subbands take advantage of a resonantly enhanced optical nonlinearity, which is six orders of magnitude stronger than in a bulk semiconductor. This approach results in a sensitive device to measure quadratic autocorrelation of mid-infrared optical pulses from modelocked quantum cascade lasers, nonlinear optical conversion, and free-electron lasers (FEL). We report on autocorrelation measurements at wavelengths in the mid-infrared and Terahertz regimes using ps optical pulses from the FEL at the Forschungszentrum Dresden Rossendorf. In particular, quadratic detection at wavelengths around 5.5 μm is still possible at room-temperature, which is crucial for applications in practical systems. We also report on a two-photon detector which works below the Reststrahlen band at 42 μm (7.1 THz).     

Analysis of graphene based optically transparent patch antenna for terahertz communications

With and without multi walled carbon nanotube (MWCNT) loaded graphene based optically transparent patch antennas are designed to resonate at 6 THz. Their radiation characteristics are analyzed in 5.66–6.43 THz band. The optically transparent graphene is deployed as the patch and ground plane of the antennas, which are separated by a 2.5 μm thick flexible polyimide substrate. By shorting the microstrip line and ground plane of the antenna with a MWCNT via, the return loss of the antenna is improved. The peak gain of 3.3dB at 6.2 THz and a gain greater than 3dB in 5.66–6.43 THz band is obtained for antenna loaded without MWCNT. Both the antennas achieved a −10dB impedance bandwidth of 12.83%. Gain, directivity and radiation efficiency of the proposed antennas are compared with conventional transparent patch antennas and graphene based non-transparent antennas. The antenna structures are simulated by using finite element method based electromagnetic simulator-Ansys HFSS.     

Improvement of R0A product of type-II InAs/GaSb superlattice MWIR/LWIR photodiodes

The effects of atomic hydrogen and polyimide passivation on R₀A product of type-II InAs/GaSb superlattice photo detectors for cut-off wavelength of both 6.5 μm and 12 μm were investigated. Low temperature current–voltage measurement shows that the use of atomic hydrogen during molecular beam epitaxy growth can improve R₀A product by 260% for 6.5 μm cut-off superlattice diodes and by 50% for 12 μm cut-off ones. The R₀A product of polyimide-passivated diodes with 12 μm cut-off is about 80% higher than those un-passivated ones. Wannier–Stark oscillations at higher reverse bias were observed for polyimide-passivated superlattice diodes with 12 μm cut-off. No Wannier–Stark oscillations were observed for un-passivated superlattice diodes, indicating that surface leakage current dominates in un-passivated diodes, while intrinsic dark current mechanisms such as tunneling and diffusion current dominate in polyimide-passivated diodes.     

Ultrasmall optical logic gates based on silicon periodic dielectric waveguides

An ultrasmall silicon periodic dielectric waveguides-based multimode interference all-optical logic gate has been proposed. The device consists of three 205 nm wide single-mode input waveguides, a 1.1 μm wide and 5.5 μm long multimode interference waveguide, and three 205 nm wide single-mode output waveguides. The total length and width of the device are 13.7 μm and 3.2 μm, respectively. By changing the states of the input optical signals and/or control signals launched into the device, multifunctional logic functions including OR, NAND, NOR, and NOT gates are performed, and each logic function can be realized at a specific output waveguide in accordance with the launched control signals. The ultrasmall multifunctional logic device has potential applications in high density photonic integrated circuits.     

Effect of PZT particle size on dielectric and piezoelectric properties of PZT–cement composites

In this work, the effect of PZT particle size on the properties of PZT–PC composites was investigated. PZT of various median particle sizes (3.8–620 μm) were used at 50% by volume to produce the composites. The results showed that the dielectric properties of the composites increased marginally with PZT particle size where ε_r = 176 and 167 for composites with 620 μm and 3.8 μm PZT particle size, respectively. A noticeable increase in d₃₃ values was also found when the particle size was increased where the composite with 620 μm PZT particles size was found to have d₃₃ value of 26 pC/N compared to 17 pC/N for the composite with 3.8 μm PZT particle size. The enhancement in the dielectric and piezoelectric properties was contributed to lesser contacting surfaces between the cement matrix and the PZT particles.     

Compact WDM demultiplexer for seven channels in photonic crystal

We demonstrate a new device concept for wavelength division demultiplexing based on planar photonic crystal waveguides. The filtering of wavelength channels is realized by shifting the cutoff frequency of the fundamental photonic bandgap mode in consecutive sections of the waveguide. The shift is realized by modifying the size of the border holes.The proposed demultiplexer has an area equal to (16.5 μm × 6.5 μm) and thus it is verified that this structure is very small and can be integrated easily into optical integrated circuits with nanophotonic technologies. The output wavelengths of designed structure can be tuned for communication applications, around 1550 nm. The wavelengths of demultiplexer channels are λ₁ = 1.590 μm, λ₂ = 1.566 μm, λ₃ = 1.525 μm, λ₄ = 1.510 μm, λ₅ = 1.484 μm, λ₆ = 1.450 μm, λ₇ = 1.400 μm respectively. Designs offering improvement of number of the separate wavelengths (seven), miniaturization of the structure (107.25 μm²) is our aim in this work.In our structure, we consider that the 2D triangular lattice photonic crystal is composed of air holes surrounded by dielectric. Its parameters are: radius of holes (r = 0.130 μm), lattice constant (a = 0.380 μm), and index of membrane (n = 3.181:InP). The numerical model used to simulate the structure of the demultiplexer is based on the finite difference time domain (FDTD).     

Laser welding of structural steels: Influence of the edge roughness level

Laser welding continues to become more extensively used in many industrial applications and in the last 10 years an increasing number of studies have examined ways to increase the efficiency of the process. This study investigates the influence of joint edge surface roughness on weld quality and penetration depth. The characteristics are investigated of welded samples of two low alloyed steels, S355 and St 3, of 20 mm thickness with various joint edge surface roughness levels in butt joint configuration. Welding was performed with different fiber lasers with a wavelength of 1070 nm at power levels from 10 to 15 kW. The absorption characteristics were evaluated at 10 kW power level using a calorimeter. There was a significant positive correlation between edge surface roughness level and the penetration depth. Optimum roughness levels to provide maximum penetration depth are presented. The highest penetration depth at power levels of 14 and 10 kW was achieved at R_a=6.3 μm.     

Porous microstructures induced by picosecond laser scanning irradiation on stainless steel surface

A study of porous surfaces having micropores significantly smaller than laser spot on the stainless steel 304L sample surface induced by a picosecond regenerative amplified laser, operating at 1064 nm, is presented. Variations in the interaction regime of picosecond laser pulses with stainless steel surfaces at peak irradiation fluences(F_pk=0.378–4.496 J/cm²) with scanning speeds(v=125–1000 μm/s) and scan line spacings(s=0–50 μm) have been observed and thoroughly investigated. It is observed that interactions within these parameters allows for the generation of well-defined structured surfaces. To investigate the formation mechanism of sub-focus micropores, the influence of key processing parameters has been analyzed using a pre-designed laser pulse scanning layout. Appearances of sub-focus ripples and micropores with the variation of laser peak fluence, scanning speed and scan line spacing have been observed. The dependencies of surface structures on these interaction parameters have been preliminarily verified. With the help of the experimental results obtained, interaction parameters for fabrication of large area homogeneous porous structures with the feature sizes in the range of 3–15 μm are determined.