Tantalum ion acceleration in laser‐generated plasma and dependence on the pulse duration

The laser irradiation of tantalum targets is presented for different pulsed laser intensities ranging from 10¹⁰ up to about 10¹⁸ W/cm² and pulse durations from 9 ns up to 40 fs. The results show that the produced non‐equilibrium plasma accelerates Ta ions in the backward direction from values of the order of keV up to values of about 5 MeV. In thin foils, the forward plasma, developed behind the target along the direction of incoming laser, at intensities of about 10¹⁶ W/cm² and 300 ps pulse duration, accelerates Ta ions at energies of the order of 4.6 MeV and produces charge states up to about 40+. For fs lasers at intensities of the order of 10¹⁸ W/cm², only proton acceleration occurs up to 2.1 MeV while no Ta ions are accelerated, due to the reduced duration of the electric field and to the too high inertial mass of the Ta ions.     

Analysis and optimization of propagation losses in LiNbO3 optical waveguides produced by swift heavy-ion irradiation

The propagation losses (PL) of lithium niobate optical planar waveguides fabricated by swift heavy-ion irradiation (SHI), an alternative to conventional ion implantation, have been investigated and optimized. For waveguide fabrication, congruently melting LiNbO₃ substrates were irradiated with F ions at 20 MeV or 30 MeV and fluences in the range 10¹³–10¹⁴ cm⁻². The influence of the temperature and time of post-irradiation annealing treatments has been systematically studied. Optimum propagation losses lower than 0.5 dB/cm have been obtained for both TE and TM modes, after a two-stage annealing treatment at 350 and 375^∘C. Possible loss mechanisms are discussed.     

Effect of swift heavy ion irradiation on thermal,optical and structural properties of poly vinylidene chloride

Poly vinylidene chloride (PVDC) irradiated with lithium (50 MeV), carbon (85 MeV), nickel (120 MeV) and silver ions (120 MeV) having fluence range of 1 × 10¹¹ ions/cm² to 3 × 10¹² ions/cm² have been studied using different techniques i.e. XRD (X-ray diffraction), FTIR (Fourier transform infrared), UV–Visible and TGA (thermo-gravimetric analysis). In XRD analysis, the intensity of diffraction peaks of PVDC irradiated with lithium ions was enhanced at lower fluence as compared to pristine. The shift in optical absorption edge in irradiated PVDC was correlated with the decrease in optical band gap energy. The distinguishable characteristic peaks were observed due to UV–Vis analysis, in lithium irradiated samples of PVDC at higher fluences. The % age decrease in optical band gap energy for the respective ions were 30.9%, 34.16%, 81.1%, 87.02% respectively. Formation of double carbon bonds and breaking of C–O and C–Cl bonds with the release of Cl in irradiated PVDC was observed in FTIR spectra. In Thermogravimetric analysis (TGA), the % age weight loss observed for irradiated samples with increase in ion fluence was lesser than the % age weight loss observed in pristine sample.     

K-line X-ray fluorescence from highly charged iron ions under dense astrophysical plasma conditions

In the present work, we report an investigation of plasma environment effects on the atomic parameters associated with the K-vacancy states in highly charged iron ions within the astrophysical context of accretion disks around black holes. More particularly, the sensitivity of K-line X-ray fluorescence parameters (wavelengths, radiative transition probabilities, and Auger rates) in Fe XVII–Fe XXV ions has been estimated for plasma conditions characterized by an electron temperature ranging from 10⁵ to 10⁷ K and an electron density ranging from 10¹⁸ to 10²² cm⁻³. In order to do this, relativistic multiconfiguration Dirac-Fock atomic structure calculations have been carried out by considering a time averaged Debye-Hückel potential for both the electron–nucleus and electron–electron interactions.     

Modified structural,morphological and photoelectrochemical properties of 120 MeV Ag9+ ion irradiated BaTiO3 thin films

The effects of high electronic energy deposition on the structure, surface topography, optical property and photoelectrochemical behavior of barium titanate thin (BaTiO₃) films have been investigated by irradiating films with 120 MeV Ag⁹⁺ ions at different ion fluences in the range of 1 × 10¹¹–3 × 10¹² ions cm^?2. Barium titanate thin films were deposited on indium tin oxide-coated glass substrate by sol–gel spin coating method. The structure of the film was crystalline with tetragonal phase. Surface topography was studied by atomic force microscopy detailing the values of roughness of the films. Maximum photocurrent density of 1.78 mA cm^?2 at 0.4 V/SCE and applied bias photon-to-current efficiency (ABPE) of 0.91% was observed for BaTiO₃ film irradiated at 1 × 10¹¹ ions cm^?2.     

Optical investigation of phosphorous-ion-implantation induced InAs/GaAs quantum dots' intermixing

This work reports on InAs/GaAs quantum dots (QDs) intermixing, induced by phosphorous ion implantation and subsequent rapid thermal annealing. The implantation process was carried out at room temperature at various doses (5×¹⁰¹⁰-¹⁰¹⁴ ions/cm²), where the ions were accelerated at 50 keV. To promote the atomic intermixing, implanted samples are subjected to rapid thermal annealing at 675 °C for 30 s. Low temperature photoluminescence (PL) measurements are carried out to investigate the influence of the interdiffusion process on the optical and electronic properties of the QDs. PL emission energy; linewidth and integrated intensity are found to exhibit a drastic dependence on the ion implantation doses. The band gap tuning limit has been achieved for an implantation dose of 5×¹⁰¹³ ions/cm². However, our measurement reveals that the accumulated defects for implantation doses higher than ¹⁰¹² ions/cm² drive the system towards the degradation of the QDs structure's quality.     

Swift heavy ion beam mixing at V/Si interface

Vanadium silicides are of increasing interest because of applications in high temperature superconductivity and in microelectronics as contact materials due to their good electrical conductivity. In the present work ion beam induced mixing at Si/V/Si interface has been investigated using 120 MeV Au ions at 1 × 10¹³ to 1 × 10¹⁴ ions/cm² fluence at room temperature. V/Si interface was characterized by Grazing Incidence X-Ray Diffraction (GIXRD), Atomic Force Microscopy (AFM), Rutherford Backscattering Spectrometry (RBS) and Cross-sectional Transmission Electron Microscopy (XTEM) techniques before and after irradiation. It was found that the atomic mixing width increases with ion fluence. GIXRD and RBS investigations confirm the formation of V₆Si₅ silicide phase at the interface at the highest ion irradiation dose.     

Nanostructuring and hardening of LiF crystals irradiated with 3–15 MeV Au ions

Modifications of the structure and mechanical properties in LiF crystals irradiated with MeV-energy Au ions have been studied using nanoindentation, atomic force microscopy and optical spectroscopy. The nanostructuring of crystals under a high-fluence irradiation (above 10¹³ ions/cm²) was observed. Nanoindentation tests show a strong ion-induced increase of hardness (up to 150–200%), which is related to the high volume concentration of complex color centers, defect aggregates, dislocation loops and grain boundaries acting as strong barriers for dislocations. From the depth profiling of the hardness and energy loss it follows that both nuclear and electronic stopping mechanisms of MeV Au ions contribute to the creation of damage and hardening. Whereas the electronic stopping is dominating in the near-surface region, the effect of elastic displacements prevails in deeper layers close to the projectile range.     

High-energy ion induced physical and surface modifications in antimony sulphide thin films

Sb₂S₃ thin films prepared by electrodeposition on indium tin oxide coated glass substrate were irradiated with 150 MeV Ni¹¹⁺ ions for various fluence in the range of 10¹¹–10¹³ ions/cm². The modifications in the structure, surface morphology and optical properties have been studied as a function of ion fluence. X-ray diffraction (XRD) analysis indicates a shift in the (2 4 0) peak position towards lower diffraction angle and a decrease in grain size with increase in ion fluence. Presence of microcracks due to irradiation induced grain splitting effect has been observed from the SEM micrograph at higher ion fluence. The optical absorbance spectrum revealed a shift in the fundamental absorption edge and the band gap energy increased from a value of 1.63 eV for as-deposited films to 1.80 eV for the films irradiated with 10¹³ ions/cm².     

FMR and TEM Studies of Co and Ni Nanoparticles Implanted in the SiO<Subscript>2</Subscript> Matrix

Fused silica plates have been implanted with 40 keV Co⁺ or Ni⁺ ions to high doses in the range of (0.25–1.0) × 10¹⁷ ions/cm², and magnetic properties of the implanted samples have been studied with ferromagnetic resonance (FMR) technique supplemented by transmission electron microscopy, electron diffraction and energy dispersive X-ray spectroscopy. The high-dose implantation with 3d-ions results in the formation of cobalt and nickel metal nanoparticles in the irradiated subsurface layer of the SiO₂ matrix. Co and Ni nanocrystals with hexagonal close packing and face-centered cubic structures have a spherical shape and the sizes of 4–5 nm (for cobalt) and 6–14 nm (for nickel) in diameter. Room-temperature FMR signals from ensembles of Co and Ni nanoparticles implanted in the SiO₂ matrix exhibit an out-of-plane uniaxial magnetic anisotropy that is typical for thin magnetic films. The dose and temperature dependences of FMR spectra have been analyzed using the Kittel formalism, and the effective magnetization and g-factor values have been obtained for Co- and Ni-implanted samples. Nonsymmetric FMR line shapes have been fitted by a sum of two symmetrical curves. The dependences of the magnetic parameters of each curve on the implantation dose and temperature are presented.     

Effect of nitrogen ions on the structural,optical, and thermal properties of polyvinyl alcohol/starch blend

This work examines the properties of polyvinyl alcohol (PVA)/starch film containing glycerol as a plasticizer under exposure to different nitrogen ion fluence. The prepared PVA/starch blend was irradiated with ion fluence from 3 × 10¹⁷ to 12 × 10¹⁷ ions.cm⁻². From FTIR, the ion beam irradiation attack and weakens the C–H bond in PVA/starch blend. From XRD findings, the crystallite size of the blend decreased at 3 × 10¹⁷ ions/cm² while it increased at higher fluence up to 9 × 10¹⁷ ions/cm². This indicates the degradation of the blend at low ion fluence compared to crosslinking at high ion fluence. Also, the optical bandgap of the blend was decreased with an increase in ion fluence. Furthermore, the effect of N⁺ ions on some optical dispersion parameters is studied. The thermal stability of the PVA/starch blend shows a decrease in thermal stability upon irradiation with 3 × 10¹⁷ ions/cm² compared to higher thermal stability at higher doses up to 9 × 10¹⁷ ions/cm².     

Room-temperature ferromagnetism of Cu ion-implanted Ga-doped ZnO

1 MeV Cu²⁺ ions have been implanted into un-doped ZnO and Ga-doped ZnO films with a dose of 1 × 10¹⁷ ions/cm² at room-temperature. Cu ion-implanted Ga-doped ZnO had ferromagnetism at room-temperature and the saturation magnetization of this sample was estimated to be 0.12 μ_B per Cu, while the Cu ion-implanted un-doped ZnO did not show ferromagnetic behavior. Near-edge X-ray fine structure (NEXAFS) spectroscopy revealed that a partial amount of implanted Cu ions existed as Cu²⁺ (d⁹) state in Ga-doped ZnO film. On the other hand, almost Cu atoms existed as Cu¹⁺ (d¹⁰) state in un-doped ZnO film. However, the subsequent annealing at temperature above 800 °C on this ferromagnetic sample induced the annihilation of ferromagnetism due to the formation of non-ferromagnetic Cu₂O phase.     

Path integral approach for Stark broadening of Lyman lines in hydrogen plasma

New results for Lyman lines from hydrogen plasmas are presented using the path integral approach. The influence of plasma components (electrons and ions) on the radiator is analysed separately. The ionic contribution is treated within the path integral approach, while the electronic contribution is estimated by the standard collision operator. The Stark effect, including the ion quadrupole contribution, is considered. The time‐dependent ionic microfield is treated within the path integral approximation using the model microfield method (MMM). The comparison with the quantum statistical approach is performed using a wide range of temperatures (T = 10⁴–10⁷ K) and electron densities (N_e = 10²³–10²⁶ m^?3). Good agreement is mainly obtained for low density and high temperature.     

Hydrothermal synthesis of large maghemite nanoparticles: influence of the pH on the particle size

Maghemite nanoparticles with sizes in the range 10–110 nm and good monodispersity have been synthesized by co precipitation at room temperature from Fe²⁺ and Fe³⁺ ions by a (N(CH₃)₄OH) solution, followed by an hydrothermal treatment at 200 °C and an oxidation step with Fe(NO₃)₃. The influence of the incubation time (at 200 °C) and of the pH of the autoclaved solution on the particles size has been studied. It was found that the pH value allows to tune the size of the maghemite particles. Electronic supplementary material  The online version of this article (doi:) contains supplementary material, which is available to authorized users.     

Absorption,luminescence, and electron paramagnetic resonance of molybdenum ions in CdWO4

A single crystal of cadmium tungstate (CdWO₄) containing approximately 200 ppm of molybdenum was grown by the Czochralski method and then characterized in a series of optical absorption, photoluminescence (PL), photoluminescence excitation (PLE), and electron paramagnetic resonance (EPR) experiments. The Mo⁶⁺ ions substitute for W⁶⁺ ions and serve as recombination sites for electrons and holes when the crystal is exposed to ionizing radiation. A charge-transfer absorption band for the Mo⁶⁺ ions was observed near 320 nm at 10 K. The PL experiments, performed at low temperature with 325 nm excitation, showed a Mo-associated emission peaking near 680 nm. A direct correlation of the 680 nm emission and the 320 nm absorption band was established by the PLE data. When these doped CdWO₄ crystals are exposed at low temperature either to light that is near or above the band gap or to X-rays, the Mo⁶⁺ ions can trap an electron and form stable Mo⁵⁺ ions. The EPR spectrum of the Mo⁵⁺ ions was observed at temperatures near 15 K, and a complete set of parameters describing the g matrix was obtained from an angular dependence study.     

Synthesis and characterizations of AgSCN nanospheres using AgCl as the precursor

Nanospheres of AgSCN with an average radius of 30–80 nm have been prepared by a simple reaction between AgCl suspension and KSCN in the presence of gelatin. Gelatin played a decisive role as an inhibitor of the direct attack of SCN⁻ ions to AgCl surfaces and coagulation of the growing AgSCN in producing the spherical AgSCN nanoparticles. The products were characterized by X-ray powder diffraction, transmission electron microscopy and X-ray photoelectron spectra techniques. The electrical conductivity of thin films of as-prepared AgSCN nanoparticles and polyethylene oxide (PEO) at room temperature was measured. The maximum value of electrical conductivity of as-prepared AgSCN–PEO was 1.53 × 10⁻⁵ S cm⁻¹.     

Nonlinear optical properties of Cu nanocluster composite fabricated by 180 keV ion implantation

Metal nanocluster composite glass prepared by 180 keV Cu ions into silica with dose of 5×10¹⁶ ions/cm² has been studied. The microstructural properties of the nanoclusters has been verified by optical absorption spectra and transmission electron microscopy (TEM). Third-order nonlinear optical properties of the nanoclusters were measured at 1064 and 532 nm excitations using Z-scan technique. The nonlinear refraction index, nonlinear absorption coefficient, and the real and imaginary parts of the third-order nonlinear susceptibility were deduced. Results of the investigation of nonlinear refraction by the off-axis Z-scan configuration were presented and the mechanisms responsible for the nonlinear response were discussed. Third-order nonlinear susceptibility χ⁽³⁾ of this kind of sample was determined to be 8.7×10⁻⁸ esu at 532 nm and 6.0×10⁻⁸ esu at 1064 nm, respectively.     

Gamma-ray induced color centers in Yb:YAG crystals grown by Czochralski method

20 at.% Yb:YAG single crystals have been grown by the CZ method and gamma-ray irradiation induced color centers and valence change of Fe³⁺ and Y b³⁺ ions in Yb:YAG have been studied. One significant 255 nm absorption band was observed in as-grown crystals and was attributed to Fe³⁺ ions. Two additional absorption (AA) bands located at 255 nm and 345 nm, respectively, were produced after gamma irradiation. The changes in the AA spectra after gamma irradiation and air annealing are mainly related to the charge exchange of the Fe³⁺, Fe²⁺, oxygen vacancies and F-type color centers. Analysis shows that the broad AA band is associated with Fe²⁺ ions and F-type color centers. The transition Y b³⁺→Y b²⁺ takes place as an effect of recharging of one of the Y b³⁺ ions from a pair in the process of gamma irradiation.     

Tuning of ripple patterns and wetting dynamics of Si (100) surface using ion beam irradiation

Ripple patterns on Si (100) surface have been fabricated using 200 keV Ar⁺ oblique ion beam irradiation. Dynamical evolution of patterns is studied for the fluences ranging from 3 × 10¹⁷ ions/cm² to 3 × 10¹⁸ ions/cm². AFM study reveals that the exponential growth of roughness with stable wavelength of ripples up to higher fluence values is lying in the linear regime of Continuum models. Stylus Profilometer measurement was carried out to emphasize the role of sputtering induced surface etching in ripple formation. Rutherford Backscattering Spectroscopy shows the incorporation of Ar in the near surface region. Observed growth of ripples is discussed in the framework of existing models of surface patterning. Role of ion beam sputtering induced surface etching is emphasized in formation of ripples. In addition, the wetting study is performed to demonstrate the possibility of engineering the hydrophilicity of ripple patterned Si (100) surface.     

Corrosion behavior of tin ions implanted zirconium in 1N H2SO4

In order to study the effect of tin ion implantation on the aqueous corrosion behavior of zirconium, specimens were implanted with tin ions to a fluence ranging from 1 × 10²⁰ to 5 × 10²¹ ions/m², using a metal vapor vacuum arc source (MEVVA) at an extraction voltage of 40 kV. The valence states and depth distributions of elements in the surface layer were analyzed by X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES) respectively. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to examine the micro-morphology and microstructure of tin-implanted samples. When the fluence was greater than 1 × 10²⁰ ions/m², many small tin balls were produced in the implanted surface. The potentiodynamic polarization technique was employed to evaluate the aqueous corrosion resistance of implanted zirconium in a 1N H₂SO₄ solution. It was found that a significant improvement was achieved in the aqueous corrosion resistance of zirconium implanted with 1 × 10²⁰ ions/m². When the fluence is higher than 1 × 10²⁰ ions/m², the corrosion resistance of zirconium implanted with tin ions decreased compared with that of the non-implanted zirconium. Finally, the mechanism of the corrosion behavior of the tin-implanted zirconium is discussed.