Effect of relative humidity on current–voltage characteristics of an electrostatic precipitator

This paper aims at characterizing the behavior of dc corona discharge in wire-to-plane electrostatic precipitators (ESPs) as influenced by the relative humidity (RH) of the inlet air. The current–voltage characteristics and time evolution of the current are analyzed. Experimental results show that discharge current is strongly affected by the RH level of the inlet air. For instance, the time-averaged current is lower at higher RH for a given voltage, except when RH = 99%. Time evolution of the discharge current is affected by the humidity especially in the case of negative corona.     

Influence of interface states on the temperature dependence and current–voltage characteristics of Ni/p-InP Schottky diodes

The ideality factor n$n$ and the barrier height _Φap${\Phi }_{ap}$ of the sputtered Ni/p-InP Schottky diodes have been calculated from their experimental Current–voltage (I–V)$\left(I\text{–}V\right)$ characteristics in the temperature range of 60–400 K with steps of 10 K. The n$n$ and _Φap${\Phi }_{ap}$ values for the device have been obtained as 1.27 and 0.87 eV at 300 K and 1.13 and 0.91 eV at 400 K, respectively. The n$n$ values larger than unity at high temperatures indicate the presence of a thin native oxide layer at the semiconductor/metal interface. The barrier height (BH) has been assumed to be bias dependent due to the presence of an interfacial layer and interface states located at the interfacial layer-semiconductor interface. Interfacial layer-thermionic emission current mechanism has been fitted to experimental I–V$I\text{–}V$ data by considering the bias-dependence of the BH at each temperature. The best fitting values of the series resistance _Rs$R_s$ and interface state density _Ns$N_s$ together with the bias-dependence of the BH have been used at each temperature, and the _Rs$R_s$ and _Ns$N_s$ versus temperature plots have been drawn. It has been seen that the experimental and theoretical forward bias I–V$I\text{–}V$ data are in excellent agreement with each other in the temperature range of 60–400 K. It has been seen that the _Rs$R_s$ and _Ns$N_s$ values increase with a decrease in temperature, confirming the results in the literature.     

Theoretical study of the effect of temperature differential and ionizing radiation on the current–voltage characteristics of HEM transistors

Requirements to the modeling of the effects of temperature differential and ionizing radiation on the current–voltage characteristics of high electron mobility transistors (HEMTs) were formulated. The results of modeling of the effects of temperature differential on the current–voltage characteristics of HEMTs were described. The results of analysis of the effects of ionizing radiation on the current–voltage characteristics of HEMTs were given. The results of modeling of the effects of ionizing radiation on the current–voltage characteristics of HEMTs were presented.     

Effect of silver doping on the current–voltage characteristic of PbS nanorods

We report on field emission property from a single nanorod measured by using scanning tunnelling spectroscopy. It has been shown that field emission from nanorods of small band gap semiconductor is significantly increasing by doping. The current transport mechanism is explained using double barrier tunnel junction formalism. It is observed experimentally that the Fowler–Nordheim tunnelling mechanism is dominant and governs the transport mechanism. The transport properties of PbS nanostructures in the form of nanorod are investigated in terms of various conduction mechanism. The minimum voltage necessary for triggering Fowler–Nordheim tunnelling under the revised biased for intrinsic sample ~0.95 V and decreases to ~0.67 V for increase doping concentration up to 1.76 wt%.     

Effect of relative humidity on current–voltage characteristics of monopolar DC wire-to-plane system

This paper deals with the DC monopolar corona discharge in wire-to-plane geometry under variable humid air conditions. The classical formulas of Townsend commonly used for the current–voltage characteristics were used to determine the various corona parameters for the both polarities of the corona discharge. A circular biased probe has been adapted to the plane and is used to measure the ground plane current density and electric field during the monopolar corona discharge. A new approach to the problem of corona discharge in transmission system has been described in this paper. The effect of varying the humidity and wires diameter is also investigated. The values of the electric field and the current density are maximum beneath the corona wire and decrease when moving away from them and the current–voltage characteristics follow the quadratic Townsend's law. The experimental results show that the monopolar corona discharge is strongly affected by the air humidity. The current density and the electric field are measured and compared with the computed values. The agreement between the calculated values and those obtained experimentally is satisfactory. The per unit electric field and current density are also represented by a unique function.     

Analysis of current–voltage and capacitance–voltage characteristics of perylene-monoimide/n-Si Schottky contacts

The electrical and interface state properties of Au/perylene-monoimide (PMI)/n-Si Schottky barrier diode have been investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. A good rectifying behavior was seen from the I–V characteristics. The series resistance (R_s) values were determined from I–V and C–V characteristics and were found to be 160 Ω and 53 Ω, respectively. The barrier height (Φ_b) of Au/PMI/n-Si Schottky diode was found to be 0.694 eV (I–V) and 0.826 eV (C–V). The ideality factor (n) was obtained to be 4.27 from the forward bias I–V characteristics. The energy distribution of interface state density (N_ss) of the PMI-based structure was determined, and the energy values of N_ss were found in the range from E_c ? 0.508 eV to E_c ? 0.569 eV with the exponential growth from midgap toward the bottom of the conduction band. The values of the N_ss without R_s are 2.11 × 10¹² eV^?1 cm^?2 at E_c ? 0.508 eV and 2.00 × 10¹² eV^?1 cm^?2 at E_c ? 0.569 eV. Based on the above results, it is clear that modification of the interfacial potential barrier for metal/n-Si structures has been achieved using a thin interlayer of the perylene-monomide.     

Investigation of current–voltage and capacitance–voltage characteristics of Ag/perylene-monoimide/n-GaAs Schottky diode

Ag/perylene-monoimide(PMI)/n-GaAs Schottky diode was fabricated and the current–voltage (I–V) characteristics at a wide temperature range between 75 and 350 K and also the capacitance–voltage (C–V) characteristics at room temperature for 1 MHz have been analyzed in detail. The measured I–V characteristics exhibit a good rectification behavior at all temperature values. By using standard analysis methods, the ideality factor and the barrier height are deduced from the experimental data and also the variations of these parameters with the temperature are analyzed. In addition, by means of the Cheung and Cheung method, the series resistance and some other electrical properties are calculated for the diode. Finally, capacitance–voltage characteristics of device have been analyzed at the room temperature. From analyzing the capacitance measurements, Schottky barrier height is determined and then compared with the value which calculated from the I–V measurements at room temperature. Also, the concentration of ionized donors, built-in potential and some other parameters of diode are found using C–V characteristics.     

Analytic modelling for current–voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors

A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal–insulator–semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In _0.15Ga_0.85 As channel, have been included to solve the 2D Poisson equation. The theoretical simulation provides a convenient and efficient way to describe the device properties of PDCFET’s. The calculated results demonstrate in excellent agreement with the experimental current–voltage characteristics. Device performances with respect to calculations of various structural dimensions have also been extended and investigated.     

Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices

We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage （I - V） curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I - V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.     

Current–voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range

The forward bias current–voltage (I–V) characteristics of Al/Rhodamine-101/n-GaAs structure have been investigated in the temperature range of 80–350 K. It has been seen a decrease in ideality factor (n) and an increase in the zero-bias barrier height (BH) with an increase in temperature. It has been seen that such a behavior of the BH and n obey Gaussian distribution of the BHs due to the BH inhomogeneities at the metal/semiconductor (MS) interface. The very strong temperature dependence of ideality factor of the structure has shown that the current processes occurring in the organic layer at the MS interface would be a possible candidate such as trap-charge limited conduction in determining the current at the intermediate and high bias regimes. Furthermore, it has been show that the Rh101 can be used to vary effective BHs for the metal/GaAs Schottky diodes. As a result, it has been determined that the BH value for conventional Al/n-GaAs SBD is remarkably higher than our own values of 0.68 eV obtained for the Al/Rh101/n-GaAs at 290 K.     

Effect of interface roughness on I–V relation of AlGaAs/GaAs heterojunction field effect transistor

We have modelled the interface roughness by Al atoms protruding into the GaAs layer at the AlGaAs/GaAs heterointerface. The I_sd − V_sdrelation is calculated to study the effect of the interface roughness on the carrier transport in an AlGaAs/GaAs heterojunction field effect transistor. With ideal conduction, I_sd − V_sdrelation is linear. The current becomes saturated when the Fermi level in the drain drops below the conduction bandedge of the source. Electron waves become scattered by interface roughness and the current is decreased. However, the interface roughness effect is small due to small size of scattering centers.     

Responsivity–dark current relationship of quantum dot infrared photodetectors (QDIPs)

We studied the responsivity–dark current relationship of quantum dot infrared photodetector (QDIP) devices published by several research groups. We found that the dark currents (I_ds) of these devices increased in proportion to the square of responsivity (R). Taking into consideration the photoconductive gain (g), which is considered to be equivalent to the noise gain (g_n), we found that this proportionality was because g (and g_n) is proportional to the square root of I_d. This result indicates that, in order to improve a device’s signal-noise characteristics, it is essential to improve its internal quantum efficiency.     

The influences of the second harmonics together with the asymmetries of junctions on the voltage–current characteristics of high TC DC SQUIDs

We consider a superconducting quantum interference device having two arbitrary different over damped junctions transporting different currents. By replacing the governed two-dimensional Fokker–Planck equation with two one-dimensional equations, two density probability currents are appeared which determine the statistical average of the time-averaged total voltage across the device. To obtain the density probability currents, two coupled integral equations are introduced. These equations together with two other equations coming from normalizing conditions, found one generalized formulation for the voltage–current characteristics of the device. Based on that, the voltage–current characteristics of large inductance asymmetric DC SQUIDs having first and second harmonics in their current-phase relations are obtained and some predictions are illustrated.     

Effect of SiO2–metal–SiO2 plasmonic structures on InGaAs/GaAs quantum well intermixing

Dielectric–metal–dielectric sandwich structures have been fabricated on top of an InGaAs/GaAs single quantum well (QW) structure to enhance atomic interdiffusion across the QW interfaces at elevated temperature during rapid thermal annealing using a halogen lamp as the heating source. The QW intermixing enhancement is realized during rapid thermal annealing. By placing a properly designed SiO₂–Ag–SiO₂ structure on top of the QW sample, a blueshift in photoluminescence emission from 920 to 882 nm was observed, larger than that obtained in a SiO₂-capped QW annealed at the same condition. Finite-difference time-domain simulation and optical reflectance measurements showed that the enhanced QW intermixing is due to the plasmonic resonance-enhanced light absorption and suppressed light reflection from the SiO₂–Ag–SiO₂ structure.     

Voltage–current and voltage–flux characteristics of asymmetric high TC DC SQUIDs

We report measurements of transfer functions and flux shifts of 20 on-chip high T_C DC SQUIDs half of which were made purposely geometrically asymmetric. All of these SQUIDs were fabricated using standard high T_C thin-film technology and they were single layer ones, having 140 nm thickness of YBa₂Cu₃O_7?x film deposited by laser ablation onto MgO bicrystal substrates with 24° misorientation angle. For every SQUID the parameters of its intrinsic asymmetry, i.e., the density of critical current and resistivity of every junction, were measured directly and independently. We showed that the main reason for the on-chip spreading of SQUIDs’ voltage–current and voltage–flux characteristics was the intrinsic asymmetry. We found that for SQUIDs with a relative large inductance (L > 120 pH) both the voltage modulation and the transfer function were not very sensitive to the junctions asymmetry, whereas SQUIDs with smaller inductance (L ? 65–75 pH) were more sensitive. The results obtained in the paper are important for the implementation in the sensitive instruments based on high T_C SQUID arrays and gratings.     

Transient characteristics of the InGaP–GaAs–InGaAs–GaAs transistor laser

Transient characteristics of the InGaP–GaAs–InGaAs (quantum well)-GaAs transistor laser are studied. Rate equations are numerically solved to obtain the response of current density and photon density. Expression of resonance frequency $f_{r}$ is obtained by solving the rate equations analytically. It has been found that the $f_{r}$ increases with decreasing spontaneous carrier lifetime and with increasing value of the bias current density.