Growth and radioluminescence of metal elements doped LiCaAlF6 single crystals for neutron scintillator

The ns²-type metal elements (Pb and Sn) doped LiCaAlF₆ single crystals were grown by a micro-pulling-down (μ-PD) method. Pb doped LiCaAlF₆ [Pb:LiCAF] crystals showed high transparency and single phase of the LiCAF structure. However, we could not obtain Sn:LiCAF crystals due to the evaporation of SnF₂ during the crystal growth. There was an absorption peak around 193 nm in the transmittance spectrum of Pb:LiCAF crystal. In the radioluminescence spectrum of the Pb:LiCAF crystal under X-ray irradiation, two emission peaks around 200 and 830 nm were observed.     

Effect of Eu and Pb doping on the dosimetric properties of LiCAF

LiCaAlF₆ (LiCAF) crystals doped with two different ions (europium and lead) have been investigated as potential new dosimetric materials. The stability of thermally stimulated luminescence (TSL) glow peaks in LiCAF:Eu was evaluated by means of the initial rise technique. The decay times at room temperature of the traps related to the dosimetric glow peaks were found to range between 40 and 2 × 10⁴ years confirming the good dosimetric characteristics of this crystal. The glow curve of LiCAF:Pb is dominated by a peak at approximately 300 °C emitting in the UV region (³P_0,1–¹S₀ transition of Pb²⁺) superimposed to a very broad structure at lower temperature (20–200 °C) featuring recombination at an intrinsic defect centre. The anomalous behavior of the low temperature structure during thermal cleaning procedures prevented any reliable numerical analysis of the TSL glow peak at 300 °C.     

Crystal growth and optical properties of Cr3+, Er3+, RE3+: Gd3Ga5O12 (RE=Tm,Ho, Eu) for mid-IR laser applications

In this paper we report on the optical properties of triply Cr³⁺, Er³⁺, and RE³⁺ (RE=Tm, Ho, Eu) doped Gd₃Ga₅O₁₂ crystals that were grown by the Czochralski method. Optical absorption, near-infrared (NIR), and mid-infrared (mid-IR) fluorescence spectra were characterized for the fabricated crystals and corresponding luminescence decay measurements under 654 nm excitation were also carried out. Based on the analysis of energy transfer process between Er and RE (RE=Tm, Ho, Eu) ions, the energy transfer efficiency (ETE) values were evaluated, correspondingly. From the spectral data of all the studied crystals, it is observed that the co-doped Cr³⁺ ion highly increases the absorption pump power and the three kinds of co-doped RE³⁺ ions depopulate the Er:⁴I_13/2 energy level effectively. The spectral analysis shows that titled rare earth doped crystals are promising materials for ～3.0 μm mid-IR laser applications and among them Cr,Er,Eu:GGG is relatively more suitable due to its excellent optical properties compared with others.     

Crystal growth and luminescence properties of Pr-doped LuLiF4 single crystal

0.1, 1, and 3% Pr (with respect to Lu) doped LuLiF₄ (Pr:LuLiF₄) single crystals were grown by the micro-pulling-down (μ-PD) method. Transparency of the grown crystals was higher than 70% in the visible wavelength region with some absorption bands due to Pr³⁺ 4f-4f transitions. Intense absorption bands related with the Pr³⁺ 4f-5d transitions were observed at 190 and 215 nm. In radioluminescence spectra, Pr³⁺ 5d-4f emissions were observed at 220, 240, 340, and 405 nm. In the pulse height spectra recorded under ¹³⁷Cs γ-ray excitation, the Pr 3% doped sample showed the highest light yield of 2050 photons/MeV and the scintillation decay time of it exhibited 23 and 72 ns also excited by ¹³⁷Cs γ-ray.     

Photoluminescence properties of Eu and Mn-activated BaMgP2O7 as a potential red phosphor for white-emission

A phosphate compound, BaMgP₂O₇ was co-doped with Eu²⁺ and Mn²⁺ for making a red-emitting phosphor. The phosphor was prepared by a solid-state reaction at high temperature. The photoluminescence properties were investigated under ultraviolet (UV) ray excitation. From a powder X-ray diffraction (XRD) analysis, the formation of single-phased BaMgP₂O₇ with a monoclinic structure was confirmed. In the photoluminescence spectra, the BaMgP₂O₇:Eu,Mn phosphor emits two distinctive colors: a blue band centered at 409 nm originating from Eu²⁺ and a red band at 615 nm caused by Mn²⁺. Also, efficient energy transfer from Eu²⁺ to Mn²⁺ in the BaMgP₂O₇:Eu,Mn system was verified by observing that the excitation spectra of BaMgP₂O₇:Eu,Mn emitted at 409 and 615 nm by Eu²⁺ emission and Mn²⁺ emission, respectively, are almost the same as that of BaMgP₂O₇:Eu monitored at 409 nm. The optimum concentration of Eu²⁺ ions in BaMgP₂O₇:0.015Eu excited at 309 nm wavelength is 1.5 mol%. With an increase of Mn²⁺ content up to 17.5 mol%, a systematic decline in the intensity of the excitation spectrum by Eu²⁺ and a gradual growth in the intensity of emission band by Mn²⁺ were observed. Accordingly, the optimum concentration of Mn²⁺ in BaMgP₂O₇:0.015Eu,Mn is 17.5 mol%. The maximum spectral overlap between emission of Eu²⁺ and excitation of Mn²⁺ is achieved in a composition of BaMgP₂O₇:0.015Eu,0.175Mn, resulting in considerable red-emission at 615 nm.     

Synthesis and scintillation properties of GdCl3:Ce3+ (Gd1−xCexCl3, x = 0.005–0.08)

Single crystals of GdCl₃ doped with different concentrations of Ce³⁺ have been grown using the Bridgman–Stockbarger technique and their luminescence and scintillation properties were investigated. The luminescence spectrum of GdCl₃:Ce³⁺ is complex and consists of two bands with maxima at 350 nm and 370 nm. The maximal light yield in GdCl₃:Ce³⁺ was observed at ～1 mol% of Ce³⁺ (more than 38 000 ph/MeV).     

Enhancement of blue holographic properties in Zr4+-doped near stoichiometric Fe:LiNbO3 crystals

The near stoichiometric LiNbO₃ crystals co-doped with ZrO₂ and Fe₂O₃ have been grown from a Li-rich melt (Li/Nb=1.38, atomic ratio) by the Czochralski method in air atmosphere at the first time. The OH^? absorption and UV–vis absorption spectra were characterized to investigate the defect structure of the crystals. The appearances of the 3479 cm^?1 absorption peak and 358 nm absorption edge manifest that the composition of the grown crystal is close to the stoichiometric ratio. The blue holographic properties were also measured by the two-wave coupling experiments. As a result, in the near stoichiometric Zr:Fe:LiNbO₃ crystals, photorefractive response speed, recording sensitivity, and two-wave coupling gain coefficient are significantly enhanced. Meanwhile, the high saturation diffraction efficiency is still maintained. These findings prove that the material of near stoichiometric Zr:Fe:LiNbO₃ crystals are a promising candidate for blue photorefractive holographic recording.     

Study of VUV emission and γ-ray responses of Nd:BaF2 scintillaotor

Nd³⁺ 1%, 5% and 10% doped BaF₂ single crystals were grown by the micro-pulling down method. Photoluminescence properties, including excitation and emission spectra and luminescence decay were measured under synchrotron radiation excitation at the Superlumi station in HASYLAB at DESY (Hamburg, Germany). The Nd³⁺ related 5d-4f emission lines peaking around 180 nm, 230 nm, and 260 nm, identified as the 5d–⁴I_j, 5d–⁴F_j, and 5d–²G_j transitions, were observed under 140–168 nm excitation. In photoluminescence decay under the 160 nm excitation, the dominant component decay time is about 12, 2.5 and 1.2 ns for Nd³⁺ 1%, 5% and 10% concentration, respectively. The decay time shortening is explained by the concentration quenching effect. Transmittance of Nd1% sample is about 80% for wavelengths above 185 nm. Finally, gamma-ray responses, non-proportionality and energy resolution of Nd1% sample were compared with the undoped BaF₂ scintillator. The light yield of the Nd1%:BaF₂ is about 93% of that of undoped BaF₂. ^©2009 Elsevier Ltd. All rights reserved.     

Growth and optical properties of Eu/Li-co-doped SrB4O7 single crystals

This paper reports the growth and optical properties of Eu²⁺/Li⁺-co-doped SrB₄O₇ single crystals. High-quality Eu,Li:SrB₄O₇ crystals without macro-defects or cracks were grown using the top-seeded solution growth (TSSG) method. The absorption and luminescent properties were measured and different spectra were observed in the as-grown crystals. As the doping amount of lithium increases, the absorption peak at 300 nm becomes stronger and the emission peak shifts to a longer wavelength. This phenomenon could be attributed to the doping lithium ions, which might affect the electric field distribution in the lattice structure.     

Luminescence spectroscopy of Ln-doped Bi-containing phosphates and molybdates

The photoluminescence (PL) emission and excitation spectra of undoped and doped with rare-earth (RE = Eu, Tb) ions K₃Bi₅(PO₄)₆ and K₂Bi(PO₄)(MoO₄) crystals are studied in 3.7–14 eV region of the excitation photon energies at T = 8 and 300 K. The mechanisms of the host-related and RE-related luminescence in 3.7–7 eV region of the excitation photon energies are revealed in comparative analysis of the PL spectra of studied compounds. It is assumed that the excitation mechanisms of host luminescence of K₃Bi₅(PO₄)₆ and K₂Bi(PO₄) (MoO₄) crystals below 4.8 eV are related to Bi³⁺ ions in oxygen surrounding. An efficient energy transfer from the Bi³⁺-related luminescence centers to the emitting RE centers exists in crystals with low concentration of the RE dopants (1%). The PL excitation spectra of K₃Bi₅(PO₄)₆ crystals with high concentration of Eu dopants are formed by O – Eu CT transitions.     

Optical and structural properties of Eu-diffused and doped ZnO nanowires

Single crystal ZnO nanowires diffused with europium (Eu) from a solid source at 900 °C for 1 h or doped with Eu during growth have been characterized. The ZnO nanowires were grown by chemical vapor deposition on Si substrates employing Au as a catalyst. The diameter of the resulting nanowires was 200 nm with a length of 1 μm. Photoluminescence spectra excited by a He–Cd laser at room temperature showed the green luminescence at 515 nm in Eu-diffused nanowires. A small red shift of near-band-edge emission of ZnO nanowires was observed in the diffused wires, but sharp emission from Eu³ ions was not present. Transmission electron microscopy shows crystalline Eu₂O₃ formation on the diffused nanowire surface, which forms a coaxial heterostructure system. When Eu was incorporated during the nanowire growth, the sharp ⁵D_O–⁷F₂ transition of the Eu³⁺ ion at around 615 nm was observed.     

Luminescence of CsBr:Eu films grown by liquid-phase epitaxy

By liquid-phase epitaxy from an aqueous alcoholic solution, we have obtained films of the well-known storage phospor CsBr:Eu, and we have studied their cathodoluminescence and photoluminescence (PL) spectra compared with the undoped CsBr films. We have established that the structure of the photoluminescence centers of the CsBr:Eu films when excited by laser radiation in the absorption band of the Eu²⁺ ions (λ = 337 nm) includes Eu²⁺-V_Cs isolated dipole centers and CsEuBr₃ aggregate centers, and also luminescence centers based on inclusions of hydroxyl group OH⁻ with the corresponding emission bands in the 440 nm, 520 nm, and 600 nm regions. We have studied the dependence of the spectra and the intensity of the photoluminescence for CsBr:Eu films on annealing temperature in air at 423–483 K, compared with analogous dependences for CsBr:Eu single crystals obtained from the melt. We have shown that annealing the films at T = 423–463 K leads to rapid formation of CsEuBr3 aggregate luminescence centers, while for T > 473 K thermal degradation of these centers occurs. We conclude that the observed differences between the photoluminescence spectra of CsBr:Eu films and CsBr:Eu single crystals may be due to additional doping of the films with OH⁻ ions. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 2, pp. 191–194, March–April, 2006.     

Preparation of Y2O3:Eu thin films by excimer-laser-assisted metal organic deposition

Europium-doped yttrium oxide (Y₂O₃:Eu) thin films were successfully deposited on quartz and ITO/glass substrates by excimer-laser-assisted metal organic deposition (ELAMOD) at low temperatures. The effects of laser wavelength and thermal temperature on the films’ crystallinity and photoluminescence properties were investigated. Films irradiated by an ArF laser at 80 mJ/cm² and 400–500°C were highly crystallized compared with those prepared by thermal MOD. In contrast, when the film was irradiated by a KrF laser at 500°C, no crystalline Y₂O₃:Eu was formed. The Y₂O₃:Eu film irradiated by the ArF laser at 80 mJ/cm² and 500°C showed typical PL spectra of Eu³⁺ ions with cubic symmetry and a ⁵D₀→⁷F₂ transition at ∼612 nm. The PL intensity at 612 nm was much higher for the film prepared with ELAMOD than for that prepared by the thermal-assisted process, and the photoemission intensity of the film prepared with ELAMOD strongly depended on the substrate material.     

Monoclinic HfO2:Eu X-ray phosphor

HfO₂ and HfO₂:Eu powders were synthesized with Pechini method at temperatures in the range of 600–1500 °C. Structural, radioluminescence and photoluminescence properties of the powders were investigated. The highest light output of about 20% of the efficiency of commercial GOS:Eu was found for materials containing 0.5% of Eu and prepared at 1500 °C. The data shows, that further improvement of light output could be obtained if materials are processed at yet higher temperatures. Emission spectra indicate that Eu³⁺ experiences variety of symmetries of its surroundings. Undoped materials produce broad band emission peaking at 480 nm and showing a significant afterglow.     

Effects of annealing treatment and gamma irradiation on the absorption and fluorescence spectra of Cr:GSGG laser crystal

The influence of annealing treatments and gamma-ray irradiation on the absorption and fluorescence spectra of Cr:GSGG crystals grown by the Czochralski method has been investigated. Two absorption bands located near 686 nm and 1050 nm were weakened markedly after the crystal was re-annealed in H₂ atmosphere, which is due to the Cr⁴⁺ ions being de-oxidized into Cr³⁺ ions. The other two weak additional absorption bands induced by gamma-ray irradiation appearing near 310 nm and 480 nm are ascribed to the Fe²⁺ ions and F-type color centers, respectively. In particular, the gamma-ray irradiation with a dose of 100 Mrad has an effect of improving slightly the luminescence properties of Cr:GSGG crystals. The improvement mechanism is analyzed and discussed.     

High efficiency UV solid state lasers based on Ce:LiCaAlF6 crystals

We report the spectroscopy and laser results of cerium-doped colquiriite LiCaAlF₆ (LiCAF) single crystals. High quality samples have been grown using the Czochralski technique and characterized by means of X-ray Laue diffractometry, absorption and emission spectra. Moreover, we measured the lifetime and deduced the emission cross-sections of the laser transition. Using this crystal we realized two lasers devices: a high-efficiency laser emitting at 289 nm with a repetition rate (RR) of up to 2 kHz and a widely tunable laser (from 280 nm to 317 nm) with an RR of up to 4.3 kHz. The high quality of the crystal made it possible to obtain the highest slope efficiency (49%) ever reported to our knowledge for a Ce:LiCAF laser. PACS 42.55.Rz; 78.55.Hx; 81.10.Fq     

Growth and luminescent properties of the Ce,Pr doped NaCl single crystals grown by the modified micro-pulling-down method

We have investigated luminescent properties of nondope, Ce and Pr doped NaCl [nondope NaCl, Ce:NaCl, Pr:NaCl] single crystals grown by a modified micro-pulling-down method with a removable chamber system. Nondope, Ce 1% and Pr 1% doped NaCl crystals with a single phase of NaCl structure were obtained and the crystals indicated general crystal quality by the X-ray rocking curve measurement. For the nondope NaCl and Pr:NaCl crystals, the transmittance spectra indicated almost more than 60% in the wavelength from 200 to 800 nm and an absorption of Ce³⁺ ion was observed in the transmittance spectrum of Ce:NaCl crystal. The emission spectrum originated from Ce³⁺ 5d–4f transition appeared around 300 nm in the photoluminescence spectrum and the decay time was 19.7 ns.     

Specific features of absorption and luminescence in CsBr: EuOBr crystals

The specific features of the absorption, photoluminescence, x-ray luminescence, thermally stimulated luminescence, and photostimulated luminescence spectra of CsBr: Eu²⁺ single crystals grown using the Bridgman method are investigated in the temperature range 80–500 K at the highest possible dopant content (0.1–0.4 mol % EuOBr in the batch) required for preparing perfect crystals. It is shown that an increase in the dopant content leads to a broadening of the absorption and photoluminescence excitation bands with maxima at wavelengths of 250 and 350 nm due to the interconfigurational transitions 4f⁷(⁸S_7/2) → 4f⁶5d(e _g , t_2g) in Eu²⁺ ions. The photoluminescence and photostimulated luminescence spectra of CsBr: EuOBr single crystals (0.1–0.4 mol % EuOBr) contain a band at a wavelength of λ_max=450 nm and bands at wavelengths of λ_max=508–523 and 436 nm. The last two bands are assigned to Eu²⁺-V_Cs isolated dipole centers and Eu²⁺-containing aggregate centers, respectively. It is revealed that the intensity of the luminescence associated with the aggregate centers (λ_max=508–523 nm) is maximum at an EuOBr content of less than or equal to 0.1 mol % and decreases with an increase in the dopant content. The possibility of forming CsEuBr₃-type nanocrystals that are responsible for the green luminescence observed at a wavelength λ_max=508–523 nm in CsBr: Eu crystals is discussed. The intensity of photostimulated luminescence in the CsBr: EuOBr crystals irradiated with x-ray photons is found to increase as the dopant content increases. It is demonstrated that CsBr: EuOBr crystals at a dopant content in the range 0.3–0.4 mol % can be used as x-ray storage phosphors for visualizing x-ray images with high spatial resolution.     

ESR spectra of Eu centers in defect Ga2S3 single crystals

In this paper, the author presents the results of measurements of the low-temperature and angular dependences of the ESR spectra of Eu²⁺ centers in defect Ga₂S₃ single crystals in the temperature range 8–29 K and for 0–180° orientations of the static magnetic field. The electron structure of impurity ¹⁵¹Eu atoms in Ga₂S₃:Eu single crystals has been studied by using the ESR method at different doping proportions of Eu atoms. Ga₂S₃ single crystals were grown from the melt using the Bridgman method. The Eu concentration was determined by atomic absorption analysis and X–ray fluorescence analysis (XRFA). By investigation on the ESR spectra, the author has first determined the values of charge states for Eu, which have turned out to be a Eu²⁺(4f⁷) ion with spin S=7/2, g=4.18±0.02 and concentration of the states of Eu N=6.3×10¹⁴ cm⁻³.     

Characterization and photoluminescence studies of Eu<Superscript>2+</Superscript>-doped BaSO<Subscript>4</Subscript> phosphor prepared by the recrystallization method

Eu doped BaSO₄ was prepared by the recrystallization method and characterization of the material was done by using X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS) and Fourier transform infrared spectroscopy (FTIR) techniques. From the XRD pattern of Eu doped BaSO₄ compound, it was found that the prominent phase formed was BaSO₄ and traces of other phases were very weak and the result of FTIR spectrum of BaSO₄:Eu shows that the sulfur-oxygen stretch was found at around 1100 cm⁻¹. The room-temperature PL spectra of the Eu doped BaSO₄ sample showed one peak centered at 374 nm, which is the characteristic emission of Eu²⁺ ion. This emission band at 374 nm corresponds to the 4f⁶ 5d→4f⁷ (⁸S_7/2) transitions of Eu²⁺ ions. The excitation spectrum taken at the wavelength 374 nm extends over a wide range of wavelengths from 220–350 nm with a strong peak at around 260 nm. Furthermore, the present sample shows good crystal quality and high photoluminescence sensitivity. Hence our results suggest possible potential applications of Eu doped BaSO₄ phosphor in optoelectronic devices.