Luminescent and scintillation properties of YAG:Dy and YAG:Dy,Ce single crystalline films

The paper is devoted to investigation of the luminescent properties of Dy³⁺ and Dy³⁺-Ce³⁺ doped single crystalline films (SCF) grown by LPE method from PbO–B₂O₃ flux. We have found that the YAG:Dy and YAG:Dy,Ce SCFs possess bright cathodoluminescence in the visible range and good scintillation figure of merit. For this reason LPE grown YAG:Dy and YAG:Dy,Ce SCF are proposed for different applications, namely, as cathodoluminescence screens or screens for microimaging. The Dy³⁺ co-doping can be also proposed for improvement of the scintillation efficiency of the Ce³⁺ doped garnet compounds in the SCF form due to Dy³⁺→ Ce³⁺ energy transfer and removing the trap related centers in the above RT range.     

Luminescent properties of LuAG:Yb and YAG:Yb single crystalline films grown by Liquid Phase Epitaxy method

In this work, investigation of the spectroscopic parameters of the luminescence of Yb³⁺ ions in single crystalline films of Lu₃Al₅O₁₂ and Y₃Al₅O₁₂ garnets was performed using the synchrotron radiation excitation with the energy in the range of Yb³⁺ charge transitions (CT), exciton range and the onset of interband transitions of these garnets. The basic spectroscopic parameters of the Yb³⁺ CT luminescence in LuAG and YAG hosts were determined and summarized with taking into account the differences in the band gap structure of these garnets.     

Luminescence and origin of lead-related centers in single crystalline films of Y2SiO5 and Lu2SiO5

In the temperature range 4.2–350 K, the steady-state and time-resolved emission and excitation spectra and luminescence decay kinetics are studied for the undoped Y₂SiO₅ and Lu₂SiO₅ single crystalline films grown by liquid phase epitaxy method from the PbO-based flux and, owing to that, containing lead ions substituting for Y³⁺ or Lu³⁺ ions. Luminescence characteristics of Pb-related centers of different types are identified. On the basis of the results obtained, we suggest that the ultraviolet emission of Pb-related centers arises from the Pb²⁺ ions substituting for Y³⁺ or Lu³⁺ ions in the Y1 and Lu1 lattice sites of the X₂ structure. Possible hypotheses on the origin of the intense complex lead-related blue emission are discussed. We propose phenomenological models describing the excited-state dynamics of the studied luminescence centers. We also determine characteristic parameters of the corresponding relaxed excited states, in particular, the energy separations between the excited states and the rates of the radiative and non-radiative transitions from these states.     

Photoluminescence and excited state structure in Bi3+-doped Y2SiO5 single crystalline films

Single crystalline films of Bi-doped Y₂SiO₅ are studied at 4.2–350 K by the time-resolved luminescence methods under excitation in the 3.8–6.2 eV energy range. Ultraviolet luminescence of Y₂SiO₅:Bi (≈3.6 eV) is shown to arise from the radiative decay of the metastable and radiative minima of the triplet relaxed excited state (RES) of Bi³⁺ centers which are related to the ³P₀ and ³P₁ levels of a free Bi³⁺ ion, respectively. The lowest-energy excitation band of this emission, located at ≈4.5 eV, is assigned to the ¹S₀ → ³P₁ transitions of a free Bi³⁺ ion. The phenomenological model is proposed to describe the excited-state dynamics of Bi³⁺ centers in Y₂SiO₅:Bi, and parameters of the triplet RES are determined.     

Luminescence spectroscopy of the Bi single and dimer centers in Y3Al5O12:Bi single crystalline films

Luminescence of the Bi³⁺ single and dimer centers in UV and visible ranges is studied in YAG:Bi (0.13 and 0.27 at% of Bi, respectively) single crystalline films (SCFs), grown by liquid phase epitaxy from a Bi₂O₃ flux. The cathodoluminescence spectra, photoluminescence decays, and time-resolved spectra are measured under the excitation by accelerated electrons and synchrotron radiation with energies of 3.7 and 12 eV, respectively. The energy level structure of the Bi³⁺ single and dimer centers was determined. The UV luminescence of YAG:Bi SCF in the bands that peaked at 4.045 and 3.995 eV at 300 K is caused by radiative transitions of Bi³⁺ single and dimer centers, respectively. The excitation spectra of UV luminescence of Bi³⁺ single and dimer centers consist of two dominant bands, peaked at 4.7/4.315 and 5.7/6.15 eV, related to the ¹S₀→³P₁ (A band) and ¹S₀→ ¹P₁ (C-band) transitions of Bi³⁺ ions, respectively. The excitation bands that peaked at 7.0 and 7.09 eV are ascribed to excitons bound with the Bi³⁺ single and dimer centers, respectively. The visible luminescence of YAG:Bi SCF presents superposition of several wide emission bands peaking within the 3.125-2.57 eV range and is ascribed to different types of excitons localized around the Bi³⁺ single and dimer centers. Apart from the above mentioned A and C bands the excitation spectra of visible luminescence contain wide bands at 5.25, 5.93, and 6.85 eV ascribed to the O²⁻→Bi³⁺ and Bi³⁺→Bi⁴⁺ + e charge transfer transition (CTT) in Bi³⁺ single and dimer centers. The observed significant differences in the decay kinetics of visible luminescence under excitation in A and C bands of Bi³⁺ ions, CTT bands, and in the exciton and interband transitions confirm the radiative decay of different types of excitons localized around Bi³⁺ ions in the single and dimer centers.     

Yb:YAG及Cr,Yb:YAG晶体的发光特性

研究了室温下YbYAG的上转换荧光光谱,此荧光归因于Yb3+离子的"合作"发光和Yb3+离子到稀土杂质离子的能量转移.测试了YbYAG晶体的X射线荧光,发光峰对应于电荷迁移态到Yb3+离子的基态、激光态间的跃迁.研究了Cr,YbYAG晶体的荧光光谱,讨论了Cr4+激光输出的可能性.     

Lu2SiO5:Ce and Y2SiO5:Ce single crystals and single crystalline film scintillators: Comparison of the luminescent and scintillation properties

The paper is dedicated to development of scintillators based on the single crystalline films of Ce³⁺ doped Lu₂SiO₅ (LSO:Ce) and Y₂SiO₅ (YSO:Ce) orthosilicates grown by Liquid Phase Epitaxy method onto YSO substrates from melt-solutions based on the PbO–B₂O₃ flux. We also compare the luminescent and scintillation properties of Ce doped LSO:Ce and YSO:Ce single crystalline films with those of their single crystal counterparts, grown by the Czochralski method.     

Highly oriented crystalline Er:YAG and Er:YAP layers prepared by PLD and annealing

High quality, thick, highly oriented crystalline thin films of Yttrium Aluminum Garnet (Y₃Al₅O₁₂) and Yttrium Aluminum Perovskite (YAlO₃) doped with Erbium were prepared by pulsed laser deposition. Samples were created in vacuum or oxygen environment. Depositions were arranged at room temperature, or at high substrate temperatures ranging from 800 to 1100 °C. Amorphous layers were annealed by laser, or in oven (argon flow, temperatures in range from 1200 to 1400 °C). Fused silica and sapphire (0 0 0 1) were used as substrates. Properties of films were characterized by X-ray diffraction, atomic force microscopy, and by photoluminescence measurement. Size of crystalline grains was in the range 116-773 nm. Thickness of layers was up to 17 μm.     

Er,Yb:YAG微晶玻璃发光特性的研究

高温熔制Er³⁺，Yb³⁺离子掺杂CaO-Y₂O₃-Al₂O₃-SiO₂系统玻璃，并进行微晶化处理，研究了微晶玻璃中Er³⁺离子的发光及上转换发光特性，分析了微晶玻璃上转换发光机理.结果表明：原始玻璃经热处理得到了Er,Yb:YAG微晶玻璃，微晶玻璃中Er³⁺离子在室温下⁴I_13/2→⁴I_15/2跃迁产生横盖1450—1650nm区间的超宽带荧光，荧光半高宽达180nm，这可能由于YAG微晶相中Er³⁺离子与玻璃相中残留Er³⁺离子的共同发光；Er³⁺与Yb³⁺离子局域基质声子能量的降低使微晶玻璃Er³⁺离子上转换发光强度与原始玻璃相比显著提高，绿光、红光上转换荧光强度比玻璃样品分别增强约7和3倍；微晶化后Er³⁺，Yb³⁺离子局域环境发生变化也导致微晶玻璃中Er³⁺离子绿光、红光上转换发光相对强度发生变化. 关键词： 铒 镱:钇铝石榴石 微晶玻璃 荧光光谱     

Yb:YAG晶体的合作发光现象

研究了Yb：YAG晶体的合作发光现象。当用940nm的近红外光激发时,Yb:YAG晶体有明显的上转换蓝色发光。实验发现498 nm的蓝色发光强度与激发功率的平方成正比,而且Yb3+掺杂浓度越高,蓝色发光越强。分析表明这是Yb3+间强的相互作用导致的合作发光,是由于Yb3+在共价性的YAG基质中,它的4f13电子易于与近邻离子发生相互作用导致的。     

Yb3+离子掺杂浓度对Yb∶YAG晶体发光及荧光寿命的影响

研究了不同掺杂浓度Yb∶YAG晶体的发光特性和荧光寿命.Yb3+在YAG晶体中的掺杂浓度分别为5at%、10at%、20at%、30at%.Yb3+离子掺杂浓度越高，Yb∶YAG晶体的吸收系数越大.采用940 nm波长的LD泵浦源和TRIA X550荧光谱仪，对这一系列掺有不同浓度Yb3+的Yb∶YAG晶体进行了荧光光谱的测定.结果表明:在1030 nm主发光波段的荧光强度以10at%Yb∶YAG的为最强.同时发现它在450 nm-680 nm波段有明显的可见发光，其强度随Yb3+掺杂浓度的增加而迅速地增强.Yb∶YAG晶体的荧光寿命存在浓度猝灭现象，对猝灭机制进行了分析研究，指出浓度猝灭的主要原因是合作发光和痕量稀土离子的上转换发光.     

Luminescent and scintillation properties of the Pr3+ doped single crystalline films of Lu3Al5−xGaxO12 garnet

The Pr³⁺ d–f luminescence was investigated in the single crystalline films (SCF) of Lu₃Al_5−xGa_xO₁₂:Pr garnet solid solution at x = 1–3, grown by the liquid phase epitaxy (LPE) method from the melt-solution based on the PbO–B₂O₃ flux. The shape of CL spectra and decay kinetics of Pr³⁺ ions in Lu₃Al_5−xGa_xO₁₂ SCFs strongly depend on the total gallium concentration x and distribution of Ga³⁺ ions between the tetrahedral and octahedral position of the garnet host. The best scintillation properties of Lu₃Al_5−xGa_xO₁₂:Pr SCF are achieved at the nominal Ga content in melt-solution in the x = 2–2.5 range.     

Luminescence and scintillation characteristics of YAG:Ce single crystalline films and single crystals

The detailed comparative analysis of luminescent and scintillation properties of the single crystalline films (SCF) of YAG:Ce garnet grown from melt-solutions based on the traditional PbO-based and novel BaO-based fluxes, and of a YAG:Ce bulk single crystal grown from the melt by the Czochralski method, was performed in this work. Using the ²⁴¹Am (α-particle, 5.49 MeV) excitation we show that scintillation yield and energy resolution of the optimized YAG:Ce SCF is fully comparable with that of the YAG:Ce single crystal analogue.     

The recombination channels of luminescence excitation in YAG:Yb single crystalline films

Absorption and emission spectra, luminescence decay kinetics and thermostimulated luminescence of X-ray irradiated YAG:Yb single crystalline films were studied. Two emission bands peaked at 420 and 488 nm have been detected in the investigated films. The strong thermal quenching of luminescence band at 488 nm was observed above 160 K. The influence of growth conditions and annealing in air on the lifetime of ${\mathrm{Yb}}^{3+}$ ion excited state in the IR spectral region have been revealed. The recombination mechanisms of the $f–f$ transition at ${\mathrm{Yb}}^{3+}$ ion excitation, as well as the mechanism of lifetime shortening for the excited ${\mathrm{Yb}}^{3+}$ luminescence have been discussed.     

Luminescence properties of highly Cr co-doped Nd:YAG powder produced by sol-gel method

We examined luminescence properties of highly chromium co-doped Nd:YAG powders fabricated by the sol-gel method. Though the maximum luminescence intensity of Cr:YAG was at 3.0 mol% of Cr³⁺ concentration, we found that the enhancement effect on Nd:YAG by co-doping Cr³⁺ was continued until 6.0 mol% of Cr³⁺ concentration. This phenomenon is well-explained by a simple energy transfer model derived from the rate equations between Cr³⁺ and Nd³⁺. The enhancement of sensitization for Nd³⁺ activator by high co-doped Cr³⁺ is very effective for making a miniaturized or thin film-type solar laser.     

单晶和孪晶的Zn0.96Co0.04O稀磁半导体薄膜的制备与研究

采用分子束外延技术分别在不同晶面的蓝宝石（sapphire Al₂O₃）基片上制备了沿c轴生长的Zn_0.96Co_0.04O稀磁半导体薄膜.发现在Al₂O₃（1120）晶面（a面）上薄膜是二维层状外延生长的高质量单晶薄膜,而在Al₂O₃（0001）晶面（c面）上薄膜却具有有趣的孪晶结构,部分区域相互之间有一个30°的面内转动来减少和基片之间的失配度.在孪晶薄膜中存在的这些相互旋转形成的区域界面上会引起载流子强烈的散射作用,导致载流子迁移率的下降和平均自由程的缩短.利用X射线吸收精细结构技术证明了无论单晶还是孪晶的Zn_0.96Co_0.04O薄膜中所有的Co都以+2价替代进入了ZnO的晶格,而没有形成任何杂相.而对其磁性研究发现,孪晶的薄膜样品比高质量的单晶薄膜样品具有大得多的饱和磁矩.这充分说明孪晶薄膜中的铁磁性来源与缺陷有关.我们还对铁磁性耦合机制进行了探讨. 关键词： Co掺杂ZnO 稀磁半导体 X射线吸收精细结构 单晶和孪晶薄膜     

Spectral properties and energy transfer of Yb,Er:GdVO4 crystal

GdVO₄ single crystal co-doped with Yb³⁺ and Er³⁺ was grown by the Czochralski method. The X-ray powder diffraction pattern of Yb,Er:GdVO₄ crystal confirms that the as-grown crystal is isostructural with pure GdVO₄ crystal. Its polarized absorption spectra and non-polarized fluorescence spectra were measured at room temperature. The absorption band at 984 nm for π-polarization has an FWHM of about 36 nm, which is favorable for InGaAs LD laser pumping. The spectrum properties of Er³⁺ in Yb,Er:GdVO₄ crystal were investigated based on Judd–Ofelt theory. There is strong energy transfer from Yb³⁺ to Er³⁺ in this crystal. When excited with 980 nm radiation, this crystal emitted strong fluorescence at about 1529 nm and 552.5 nm. The total energy transfer rate and efficiency from Yb³⁺ to Er³⁺ is 3.33 ms^-1 and 67%, respectively. The energy transfer between Er³⁺ and Yb³⁺ ions is a multistep transfer process, and was investigated based on a random-walk model. The investigation result shows that there is strong cooperative-sensitization effect from Yb³⁺ to Er³⁺, which is the main upconversion energy-transfer process in this crystal. PACS 42.70.Hj; 81.10.Fq; 42.55.Rz     

Preparation and optical properties of single crystal thin films of bismuth substituted iron garnets for magneto-optic applications

Single crystal thin films of Bi substituted iron garnets have been grown by the liquid phase epitaxy technique. The growth conditions and compositions are presented together with the segregation coefficients of Bi and Pb as a function of growth temperature. The Faraday rotation and optical absorption have been measured for wavelengths between 0.7 and 0.46 μm. The superior magneto-optic properties (Faraday rotations of up to ten times larger than that observed for Y₃Fe₅O₁₂) make these epitaxial layers attractive for magneto-optic devices. The influence of Pb incorporation on the optical properties of the films is discussed. Compositions of Bi and Ga(Al) substituted Gd₃Fe₅O₁₂, which exhibit a magnetic compensation temperature near room temperature and high Faraday rotation, have also been prepared. The magnetic switching behaviour as a function of temperature has been determined. It shows that these films are especially suited for thermomagnetic recording using an argon ion laser at a wavelength of 5145 Å.     

Visible upconversion emission and non-radiative direct Yb to Er energy transfer processes in nanocrystalline ZrO2:Yb,Er

Wide band gap Yb³⁺ and Er³⁺ codoped ZrO₂ nanocrystals have been synthesized by a modified sol-gel method. Under 967 nm excitation strong green and red upconversion emission is observed for several Er³⁺ to Yb³⁺ ions concentration ratios. A simple microscopic rate equation model is used to study the effects of non-radiative direct Yb³⁺ to Er³⁺ energy transfer processes on the visible and near infrared fluorescence decay trends of both Er³⁺ and Yb³⁺ ions. The microscopic rate equation model takes into account the crystalline phase as well as the size of nanocrystals. Nanocrystals phase and size were estimated from XRD patterns. The rate equation model succeeds to fit simultaneously all visible and near infrared fluorescence decay profiles. The dipole-dipole interaction parameters that drive the non-radiative energy transfer processes depend on doping concentration due to crystallite phase changes. In addition the non-radiative relaxation rate (⁴I_11/2→⁴I_13/2) is found to be greater than that estimated by the Judd-Ofelt parameters due to the action of surface impurities. Results suggest that non-radiative direct Yb³⁺ to Er³⁺ energy transfer processes in ZrO₂:Yb,Er are extremely efficient.     

Luminescence and scintillation properties of YAG:Ce single crystal and optical ceramics

We use various techniques to study optical and scintillation properties of Ce-doped yttrium aluminum garnet, Y₃Al₅O₁₂ (YAG:Ce), in the form of a high-quality industrial single crystal. This was compared to optical ceramics prepared from YAG:Ce nanopowders. We present experimental data in the areas of optical absorption, radioluminescence, scintillation decay, photoelectron yield, thermally stimulated luminescence and radiation-induced absorption. The results point to an interesting feature—the absence of antisite (Y_Al, i.e. Y at the Al site) defects in optical ceramics. The scintillation decay of the ceramics is faster than that of the single crystal, but its photoelectron yield (measured with 1 μs integration time) is about 30-40% lower. Apart from the photoelectron yield value the YAG:Ce optical ceramic is fully comparable to a high quality industrial YAG:Ce single crystal and can become a competitive scintillator material.