Optical characterization of amorphous Ga50Se45S5 films

The transmission spectra of thermally evaporated Ga₅₀Se₄₅S₅ films were measured over the wavelength range 300–900 nm. A simple method, suggested by Swanepoel, was used for the determination of the optical constants and thickness of the films. Increasing the thickness of the film beyond 450 nm does not affect the optical constants. The dependence of the absorption coefficient on the photon energy (hν) at the edge of the absorption band is well described by the relation hν=β(hν−E_opt)² with an optical gap equals 2.4 eV. A good fit of the experimental points with Tauc relation indicates that non-direct transition is the most probable mechanism responsible for the photon absorption inside the investigated film.     

Origin of the metal-insulator transition in the superconducting series Bi2Sr2Ca1−xYxCu2O8+δ

The metal-insulator transition in the solid solution Bi₂Sr₂Ca_1−xY_xCu₂O_8+δ (0≤x≤1) has been investigated by TGA (oxygen content) and by X-ray absorption spectroscopy (Bi and Cu valence states). Resistivity and AC magnetic susceptibility measurements have shown that the superconducting properties and the metallic behavior vanish for x>0.55. The oxygen content δ is larger than x/2 for x≤0.3 and smaller than x/2 for x≥0.6. For x=0, the Cu K edge shows a shift towards high energy with respect to the Cu(II) oxide La₂CuO₄; this shift decreases with increasing x in agreement with the decrease of the doping hole density and the variations of the physical properties. For 0≤x≤0.3, the Bi L₃ edge shows a shift of 1 eV towards low energy with respect to the Bi(III) oxide Bi₂O₃ in agreement with the charge transfer between [CuO₂]_∞ and [BiO]_∞ planes. This shift also decreases with increasing x, but is still present for the x=0.6 composition for which δ is smaller than x/2. A model of the metal-insulator transition in this series is proposed based on the fact that the intercalation of excess oxygen raises the bottom of the Bi-O band with respect to the Fermi level and decreases the contribution of the Bi-O electron pocket to the hole density.     

Material design of new lithium ionic conductor, thio-LISICON, in the Li2S–P2S5 system

A new lithium ionic conductor of the thio-LISICON (LIthium SuperIonic CONductor) family was found in the binary Li₂S–P₂S₅ system; the new solid solution with the composition range 0.0≤x≤0.27 in Li_3+5xP_1−xS₄ was synthesized at 700 °C and characterized by X-ray diffraction measurements. Its electrical and electrochemical properties were studied by ac impedance and cyclic voltammetry measurements, respectively. The solid solution member at x=0.065 in Li_3+5xP_1−xS₄ showed the highest conductivity value of 1.5×10⁻⁴ S cm⁻¹ at 27 °C with negligible electronic conductivity and the activation energy of 22 kJ mol⁻¹ which is characteristic of high ionic conduction state. The extra lithium ions in Li₃PS₄ created by partial substitution of P⁵⁺ for Li⁺ led to the large increase in ionic conductivity. In the solid solution range examined, the minimum conductivity was obtained for the compositions, Li₃PS₄ (x=0.0 in Li_3+5xP_1−xS₄) and Li₄P_0.8S₄ (x=0.2 in Li_3+5xP_1−xS₄); this conductivity behavior is similar to other thio-LISICON family with the general formula, Li_xM_1−yM_y′S₄ (M=Si, Ge, and M′=P, Al, Zn, Ga, Sb). Conduction mechanism and the material design concepts are discussed based on the conduction behavior and the structure considerations.     

Lithium insertion to ReO3-type metastable phase in the Nb2O5–WO3 system

Lithium insertion to distorted ReO₃-type metastable solid solution Nb_xW_1−xO_3−x/2 (0≤x<0.25) has been studied by chemical and electrochemical methods. In the course of lithium insertion into tetragonal compounds, transition to a cubic phase was found to occur in the region where values of y (in Li_yNb_xW_1−xO_3−x/2) fall between 0.2 and 0.3, and the phase transition was found to depend on the conditions of the reaction. Changes in OCV and lattice parameters in tetragonal region (y<0.2) were discussed from the viewpoint of the ordering of lithium ions. Also, the component diffusion coefficient of lithium in tetragonal compounds Li_0.1Nb_xW_1−xO_3−x/2 (0≤x≤0.23) was found to increase with niobium content when x≤0.10, and to saturate at 4×10⁻⁹ cm²/s.     

Composition and thermal-induced effects on the optical constants of Ge20Se80−xBix thin films

 The effects of composition and thermal annealing near crystallization temperature, T_c on the optical and structural properties of Ge₂₀Se_80−xBi_x (x=0, 2.5, 5 and 7.5 at%) was investigated. The influence of incorporation Bi content in Ge₂₀Se_80−xBi_x system results in a gradual decrease in the indirect optical gap from 1.89 to 1.44 eV, this behavior can be explained as increased tailing. On annealing, the optical band gap E_g decreases gradually for the crystallized films while the refractive index increases, this behavior can be attributed to transformation from amorphous to crystalline and was explained in the light of dangling bond model. The refractive index n of as-prepared and annealed films has been analyzed according to the Wwmple–DiDominico single oscillator model and the values of E_o and E_d were determined. The effect of annealing on the nature and degree of crystallization has been investigated by studying the structure using transmission electron microscope, X-ray diffraction and scanning electron microscope.     

Optical constants of Tl4Ga3InSe8 layered single crystals

The optical properties of Tl₄Ga₃InSe₈ layered single crystals have been studied by means of transmission and reflection measurements in the wavelength range of 500–1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.94 and 2.20 eV, respectively. Transmission measurements carried out in the temperature range of 10–300 K revealed that the rate of change of the indirect band gap with temperature is γ=−4.1×10⁻⁴ eV/K. The absolute zero value of the band gap energy was obtained as E_gi(0)=2.03 eV. The dispersion of the refractive index is discussed in terms of the Wemple–DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index were found to be 4.10 eV, 23.17 eV, 6.21×10¹³ m⁻² and 2.58, respectively. From X-ray powder diffraction study, the parameters of monoclinic unit cell were determined.     

Effects of substitution of Ti for Fe in BiFeO3 films prepared by sol–gel process

Ti substituted BiFe_1−xTi_xO_3+δ films have been prepared on indium–tin oxide (ITO)/glass substrates by the sol–gel process. The films with x=0.00–0.20 were prepared at an annealing temperature of 600 °C. X-ray diffraction patterns indicate that all films adopt R3m structure and the films with x=0 and 0.10 show pure perovskite phase. Cross-section scanning shows the thickness of the films is about 300 nm. Through 0.05 Ti substitution, the 2P_r increases to 8.30 μC/cm² from 2.12 μC/cm² of the un-substituted BiFeO₃ film and show enhanced ferroelectricity at room temperature. The 2P_r values are 2.63 and 0.44 μC/cm² for the films with x=0.01 and 0.2, respectively. Moreover, the films with x=0.05 and 0.10 show enhanced dielectric property since the permittivity increases near 150 at the same measuring frequency. Through the substitution of Ti, the leakage conduction is reduced for the films with x=0.05–0.20.     

Electrical properties of LiCr1-xAlxTiO4 (0≤x≤0.4)

The conductivity measurements on polycrystalline samples have been obtained by ac techniques and the ionic transference number has been calculated by charge/discharge d.c. technique. In the LiCr_1-xAl_xTiO₄ (0≤x≤0.4) spinel systems, at low x, the solid solutions are predominantly electronic conductors but on increasing x, the level of electronic conductivity decreases giving rise to materials that are mixed conductors.     

Structural and optical properties of thermally evaporated Bi2Te3 films

Bi₂Te₃ films were prepared by thermal evaporation technique. X-ray diffraction analysis for as-deposited and annealed films in vacuum at 150 °C were polycrystalline with rhombohedral structure. The crystallite size is found to increase as the film thickness increases and has values in the range 67–162 nm. The optical constants (the refractive index, n, and absorption index, k) were determined using transmittance and reflectance data in the spectral range 2.5–10 μm for Bi₂Te₃ films with different thicknesses (25–99.5 nm). Both n and k are independent on the film thickness in the investigated range. It was also found that Bi₂Te₃ is a high refractive index material (n has values of 4.7–8.8 in the wavelength range 2.5–10 μm). The allowed optical transitions were found to be direct optical transitions with energy gap  eV. The optical conductivities σ₁ = ƒ(hν) and σ₂ = f(hν) show distinct peaks at about 0.13 and 0.3 eV, respectively. These two peaks can be attributed to optical interband transitions.     

Localization of charge carriers in the c-axis electronic transport of YBa2Cu3Oχ

Reflectance measurements with E c on a YBa₂Cu₃O_x single crystal where the oxygen content was varied between x = 6.8 and X = 6.98 are presented in the far infrared range (5 rmmeV < ω < 100 meV) at temperatures between 10 K and 300 K. Performing a Kramers-Kronig transformation we derived the optical conductivity δ _c ( ω). An analysis of the spectral weight shows that the main contribution of the electronic transport is due to localized carriers. With decreasing the oxygen content, the spectral weight of free carriers decreases whereas the spectral weight of localized carriers is enhanced.     

Correlation between structural and optical properties of ion beam synthesized β-FeSi2 precipitates in Si

The structural and optical properties of β-FeSi₂ precipitates produced by ion beam synthesis have been investigated by transmission electron microscopy, photoluminescence (PL) analysis and near infrared transmission measurements. The PL spectrum of β-FeSi₂ precipitates in a dislocation free sample has been observed to consist of a sharp line at 1.54 μm and a weak peak at 1.46 μm. Optical transmission measurements showed a direct band gap about 0.8 eV smaller than in continuous β-FeSi₂ film. Calculation of the electronic bands of β-FeSi₂ for different values of the lattice parameters indicates that this reduction can be ascribed to band distortion provided by the lattice strain.     

Composite protonic solid electrolytes in the CsHSO4-SiO2 system

Transport, thermal and structural properties of the composite solid electrolytes (1 −x)CsHSO₄---xSiO₂ (where x = 0–0.8) were investigated. The composites were prepared by mechanical mixing of components followed by heating at temperatures near CsHSO₄ melting point (483 K). The dependence of low temperature phase conductivity on x has a maximum with a value 2.5 orders of magnitude higher than that of pure CsHSO₄ and conductivity is governed by protons. Heterogeneous doping is shown to change markedly the thermodynamic parameters of the ionic component. The phase transition temperature CsHSO₄ in the composites decreases from 414 to 350 K with the increase of the content of heterogeneous additive SiO₂ from 0 to 0.7. As x raises CsHSO₄ the amorphization takes place and the relative change of ionic conductivity at phase transition diminishes, the phase transition becomes diffusive and disappears for the 0.2CsHSO₄---0.8SiO₂ composite.     

Synthesis and physical behaviour of In2S3 films

In₂S₃ layers have been grown by close-spaced evaporation of pre-synthesized In₂S₃ powder from its constituent elements. The layers were deposited on glass substrates at temperatures in the range, 200–350 °C. The effect of substrate temperature on composition, structure, morphology, electrical and optical properties of the as-grown indium sulfide films has been studied. The synthesized powder exhibited cubic structure with a grain size of 63.92 nm and S/In ratio of 1.01. The films grown at 200 °C were amorphous in nature while its crystallinity increased with the increase of substrate temperature to 300 °C. The films exhibited pure tetragonal β-In₂S₃ phase at the substrate temperature of 350 °C. The surface morphological analysis revealed that the films grown at 300 °C had an average roughness of 1.43 nm. These films showed a S/In ratio of 0.98 and a lower electrical resistivity of 1.28 × 10³ Ω cm. The optical band gap was found to be direct and the layers grown at 300 °C showed a higher optical transmittance of 78% and an energy band gap of 2.49 eV.     

Dielectric and ferroelectric properties of the mixed crystals system (CH3NH3)5Bi2(1 − x)Sb2xCl11

Dielectric and pyroelectric properties of the mixed crystals system, (CH₃NH₃)₅Bi_{2(1 − x)}Sb_2xCl₁₁ (0 < x < 0.25) were systematically investigated. Temperature dependencies of ′_c in the vicinity of ferro-paraelectric phase transition were measured for the mixed crystals with x = 0.05, 0.07, 0.11, 0.13 and 0.25 in the frequency region 1 kHz–1 MHz. The substitution of bismuth atoms by antimony drastically reduces the magnitude of ′_c and shifts the ferro-paraelectric phase transition towards higher temperatures. The dielectric dispersion of the complex electric permittivity, _c^*, in x = 0.05 crystals was studied in the frequency range from 30 to 1000 MHz. Around 321 K phase transition, two dielectric relaxators are postulated; a low-frequency one in the megahertz region showing a critical slowing down and a high-frequency one in the gigahertz region.     

Direct evidence for charge ordering and electronic phase separation in BixSr1−xMnO3 at room temperature

We present a study of charge ordering and electronic phase separation (EPS) phenomenon in Bi_xSr_1−xMnO₃, for an exhaustive range of x (0.25x0.75), by STM/STS at room temperature (RT) and specific heat measurements at high temperatures (350–650 K). Atomically resolved STM images of the samples, in real space, show the presence of stripe-like charge-ordered (CO) phase coexisting with charge-disordered (CD) phase. The STM images further reveal that the fraction of CO phase increases with an increase in x. The conductance spectra of these phases measured at nano level by STS are discussed. The transition to CO phase above RT is corroborated by specific heat measurements in all samples, giving a T_CO(x) phase diagram for this system.     

Kinetics study of a-Se80Te20−xPbx using non-isothermal crystallization

The kinetics of crystallization in Se₈₀Te_20−xPb_x (x=0, 2, 6 and 10) glasses is studied by non-isothermal method using differential scanning calorimetry (DSC). DSC is performed at different heating rates of 5, 10, 15 and 20 K/min. The values of glass transition and crystallization temperatures are found to be composition and heating-rate dependent. From the heating-rate dependence of the glass transition and crystallization temperatures, the activation energy of crystallization (ΔE_c) and order parameter (n) are calculated.     

Effect of Cu doping in MgB2 superconductor at various processing temperatures

The effects of Cu doping in MgB₂ superconductor has been studied at different processing temperatures. The polycrystalline samples of Mg_1−xCu_xB₂ with x = 0.05 were synthesized through the in-situ solid sate reaction method in argon atmosphere at different temperature range between 800–900 °C. The samples were characterized through X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and low temperature R–T measurement techniques for the phase verification, microstructure and superconducting transition temperature, respectively. The XRD patterns of Mg_1−xCu_xB₂ (x = 0.05) do not exhibit any impurity traces of MgB₄ or MgB₆ and they show the sharp transition in the samples prepared at 850 °C. The onset transition temperature of the prepared samples is around 39 K, which is almost the same as that for the pure MgB₂. This indicates that Cu doping in MgB₂ does not affect the transition temperature. The SEM micrograph of Mg_0.95Cu_0.05B₂ has shown that the sample is dense with grain size smaller than 1 μm.     

Shaped crystal growth and scintillating properties of Yb:(Gd,Lu)3Ga5O12 solid solutions

Shaped single crystals of (Lu_xGd_1−x)₃Ga₅O₁₂ (0.0x1.0) and (Yb_0.05Lu_xGd_0.95−x)₃Ga₅O₁₂ (0.0x0.9) were grown by the modified micro-pulling-down method. Continuous solid solutions with garnet structure and a linear compositional dependency of crystal lattice parameter in the system Yb:(Gd,Lu)₃Ga₅O₁₂ are formed. Measured optical absorption spectra of the samples show 4f–4f transitions related to Gd³⁺ ion at 275 and 310 nm, and also an onset of charge transfer transitions from oxygen ligands to Gd³⁺ or Yb³⁺ cations below 240 nm. A complete absence of Yb³⁺ charge transfer luminescence under X-ray excitation in any of the investigated samples was explained by the overlapping of charge transfer absorption of Yb³⁺ by that of Gd³⁺ ions. For specific composition of Lu_1.5Gd_1.5Ga₅O₁₂ an intense defect-host lattice-related emission, which achieve of about 40% integrated intensity compared with Bi₄Ge₃O₁₂, was found.     

Properties of nonstoichiometric Pr0.6−xSr0.4MnO3 as the cathodes of SOFCs

A series of samples Pr_0.6−xSr_0.4MnO₃ (x=0, 0.01, 0.05, 0.1, 0.15, 0.2) were synthesized by a solid state reaction method. Pr deficiency at the A site has a great effect on the properties of Pr_0.6−xSr_0.4MnO₃ as the cathode of SOFCs (solid oxide fuel cells). Compared to the commonly used La_0.6Sr_0.4MnO₃ and La_0.55Sr_0.4MnO₃ cathode, Pr_0.6−xSr_0.4MnO₃ is better in the properties of conductivity, overpotential and impedance. In all the samples, the one with x=0.05, Pr_0.55Sr_0.4MnO₃, revealed the best performance in the measured temperature range.     

Ca1−xYxMnO3 manganites: synthesis and ESR characterization

Ceramic samples of Ca_1−xY_xMnO₃ were synthesized by a liquid-mix method obtaining single phase materials, for 0.1x1, with orthorhombic structure. The cell volume increases with x indicating that changes in the Mn electronic state overcomes the progressive diminishing of the (Ca, Y) cationic radius, r_Ca>r_Y. We observed a continuous broadening of the electronic spin resonance line width with x. This is explained in terms of the increasing orthorhombic distortions. We have measured the DC magnetization for the x=1 compound YMnO₃. Our results are compatible with a G-type antiferromagnet with T_N=44 K.