Raman Analysis of 30 MeV C60 Irradiated N-doped Carbon

In the present work, we used the technique of “low energy ion implantation swift; heavy ion irradiation ”to investigate huge electronic excitations induced modification in N-doped graphite-like-carbon.     

Modification of Fe/Cu multilayers under 400 keV Xe20+ irradiation

Two kinds of Fe/Cu multilayers with different modulation wavelength were deposited on cleaved Si(100) substrates and then irradiated at room temperature using 400 keV Xe²⁰⁺ in a wide range of irradiation fluences. As a comparison, thermal annealing at 300—900℃ was also carried out in vacuum. Then the samples were analyzed by XRD and the evolution of crystallite structures induced by irradiation was investigated. The obtained XRD patterns showed that, with increase of the irradiation fluence, the peaks of Fe became weaker, the peaks related to Cu-based fcc solid solution and Fe-based bcc solid solution phase became visible and the former became strong gradually. This implied that the intermixing at the Fe/Cu interface induced by ion irradiation resulted in the formation of the new phases which could not be achieved by thermal annealing. The possible intermixing mechanism of Fe/Cu multilayers induced by energetic ion irradiation was briefly discussed.     

Effects of swift argon-ion irradiation on the proton-exchanged LiNbO₃ crystal

A proton-exchanged LiNbO3 crystal was subjected to 70-MeV argon-ion irradiation.The lattice damage was investigated by the Rutherford backscattering and channeling technique.It was found that the lattice disorder induced by the proton exchange process was partially recovered and the proton-exchanged layer was broadened.It indicated that the lithium ions underneath the initial proton-exchanged layer migrated to the surface during the swift argon-ion irradiation and supplemented the lack of lithium ions in the initial proton-exchanged layer.This effect was ascribed to the great electronic energy deposition and relaxation.The swift argon-ion irradiation induced an increase in extraordinary refractive index and formed another waveguide structure beneath the proton-exchanged waveguide.     

Effects of swift argon-ion irradiation on the proton-exchanged LiNbO3 crystal

A proton-exchanged LiNbO3 crystal was subjected to 70-MeV argon-ion irradiation.The lattice damage was investigated by the Rutherford backscattering and channeling technique.It was found that the lattice disorder induced by the proton exchange process was partially recovered and the proton-exchanged layer was broadened.It indicated that the lithium ions underneath the initial proton-exchanged layer migrated to the surface during the swift argon-ion irradiation and supplemented the lack of lithium ions in the initial proton-exchanged layer.This effect was ascribed to the great electronic energy deposition and relaxation.The swift argon-ion irradiation induced an increase in extraordinary refractive index and formed another waveguide structure beneath the proton-exchanged waveguide.     

Preparation of a Waveguide Array in Flame Hydrolysis Deposited GeO2—SiO2 Glasses by Excimer Laser Irradiation

SiO2 galss films doped with GeO2 were prepared by the flame hydrolysis deposition method,then annealed at 1200℃.After exposure to high pressure hydrogen,the as-deposited films were irradiated with excimer laser pulses operated at 248nm,The induced refractive index change(the growth of index change was 0.33%)was measured by a spectorscopic ellipsometer.A waveguide array has been written in the film by irradiation through a phase mask.     

离子辐照单晶Si损伤效应的研究

回顾了低能离子注入单晶Si经由核弹性碰撞引起的损伤特征及其常规的研究方法,介绍了快重离子辐照单晶Si经由电子能损引起的损伤特点及研究现状,并对该领域的研究作了展望. The radiation damage in silicon induced by low energy ion implantation was briefly reviewed together with a short introduction to the common techniques in the area. The damage characteristics of swift heavy ion irradiation in silicon and its investigations were introduced with emphasis on the effects induced by processes of electronic energy losses. It is shown that swift heavy ion can induce defects far beyond the projected range and up to 28 MeV/μm the electronic energy ...     

ION-BEAM-INDUCED SOLID PHASE CRYSTALLIZATION OF MeV Si+-IMPLANTED Si(100)

The behavior of ion-beam-induced crystallization of a buried amorphous layer created by means of MeV Si⁺ irradiation at 300℃ in Si(100) was studied by Rutherford backscattering and channeling technique. Sohd phase epitaxial crystallizations occurred from both the front and the back amorphous-crystalline(a/c) interfaces with the growth thickness being increased linearly with increasing dose of the annealing ion beam, Nuclear energy deposition was proved to play a dominant role in the process of ion-beam-induced crystallization. The high density of electronic excitation, which could enhance defect production near or at the a/c interface, may thus enhance the nuclearly normalized growth rate of ion-beam-induced crystallization at the front a/c interface.     

ION-BEAM-INDUCED SOLID PHASE CRYSTALLIZATION OF MeV Si+-IMPLANTED Si(100)

The behavior of ion-beam-induced crystallization of a buried amorphous layer created by means of MeV Si⁺ irradiation at 300℃ in Si(100) was studied by Rutherford backscattering and channeling technique. Sohd phase epitaxial crystallizations occurred from both the front and the back amorphous-crystalline(a/c) interfaces with the growth thickness being increased linearly with increasing dose of the annealing ion beam, Nuclear energy deposition was proved to play a dominant role in the process of ion-beam-induced crystallization. The high density of electronic excitation, which could enhance defect production near or at the a/c interface, may thus enhance the nuclearly normalized growth rate of ion-beam-induced crystallization at the front a/c interface.     

Femtosecond Laser Induced Optical Waveguides and Micro—mirrors Inside Glasses

Optical Waveguides and micro-mirrors have been successfully induced inside fused silica glass and k9 glass,respectively,by focusing a 800nm femtosecond(fs)pulsed laser with a repetition rate of 1kHz,The change of refractive index was determined to be 0.001-0.008 in the fused silica glass and 0.006 in the k9 glass.The refractive index change is dependent on both the dose of irradiation and the power density of the fs pulsed laser,Photoluminescence was observed in the irradiated region,and was attributed to the defects induced by fs laser irradiation.We discuss the relationship between the optical property and the luminescent propert property of the irradiated region.     

Tuning the phase separation in La_(0.325)Pr_(0.3)Ca_(0.375)MnO_3 using the electric double-layer field effect

Electric double-layer field effect experiments were performed on ultrathin films of La0.325Pr0.3Ca0.375MnO3, which is noted for its micrometer-scale phase separation. A clear change of resistance up to 220% was observed and the characteristic metal–insulator transition temperature TPwas also shifted. The changes of both the resistance and TPsuggest that the electric field induced not only tuning of the carrier density but also rebalancing of the phase separation states. The change of the charge-ordered insulating phase fraction was estimated to be temperature dependent, and a maximum of 16% was achieved in the phase separation regime. This tuning effect was partially irreversible, which might be due to an oxygen vacancy migration that is driven by the huge applied electric field.     

Electron irradiation-induced change of structure and damage mechanisms in multi-walled carbon nanotubes

Owing to their unique structure and excellent electrical property, carbon nanotubes(CNTs) as an ideal candidate for making future electronic components have great application potentiality. In order to meet the requirements for space application in electronic components, it is necessary to study structural changes and damage mechanisms of multi-walled carbon nanotubes(MWCNTs), caused by the irradiations of 70 and 110 ke V electrons. In the paper, the changes of structure and damage mechanisms in the irradiated MWCNTs, induced by the irradiations of 70 and 110 ke V electrons, are investigated.The changes in surface morphology and structure of the irradiated MWCNT film are characterized using scanning electron microscopy(SEM), x-ray photoelectron spectroscopy(XPS), Raman spectroscopy, x-ray diffraction analysis(XRD), and electron paramagnetic resonance(EPR) spectroscopy. It is found that the MWCNTs show different behaviors in structural changes after 70 and 110 ke V electron irradiation due to different damage mechanisms. SEM results reveal that the irradiation of 70 ke V electrons does not change surface morphology of the MWCNT film, while the irradiation of 110 ke V electrons with a high fluence of 5 × 1015cm-2leads to evident morphological changes, such as the formation of a rough surface, the entanglement of nanotubes and the shrinkage of nanotubes. Based on Raman spectroscopy, XPS, and XRD analyses, it is confirmed that the irradiation of 70 ke V electrons increases the interlayer spacing of the MWCNTs and disorders their structure through electronic excitations and ionization effects, while the irradiation of 110 ke V electrons obviously reduces the interlayer spacing of the MWCNTs and improves their graphitic order through knock-on atom displacements. The improvement of the irradiated MWCNTs by 110 ke V electrons is attributed to the restructuring of defect sites induced by knock-on atom displacements. EPR spectroscopic analyses reveal that the MWCNTs exposed to both70 ke V electrons and 110 ke V electrons suffer ionization damage to some extent.     

Influence of Ga+ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates.It investigates the thermal relaxations of both non-irradiated and Ga + ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field.The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ga + ion irradiated CoFe/IrMn bilayers.Exchange bias field is also found to be smaller upon irradiation at higher ion dose.This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.     

Electronic mobility in the high-carrier-density limit of ion gel gated IDTBT thin film transistors

Indacenodithiophene-co-benzothiadiazole(IDTBT) has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone. By using the recently developed ion gel gating technique we studied the charge transport of IDTBT at carrier densities up to 1021cm-3.While the conductivity in IDTBT was found to be enhanced by nearly six orders of magnitude by ionic gating, the charge transport in IDTBT was found to remain 3D Mott variable range hopping even down to the lowest temperature of our measurements, 12 K. The maximum mobility was found to be around 0.2 cm2·V-1·s-1, lower than that of Cytop gated field effect transistors reported previously. We attribute the lower mobility to the additional disorder induced by the ionic gating.     

Multiple Scattering Effects of Ag Particles in Random Ag-SiN Film

A layer of 40nm-thick Ag-SiN film with Ag nano-particles embedded and distributed randomly in the SiN thin film were deposited by the method of radiant-frequency magnetron sputtering. Specimens orderly comprising a random Ag-SiN film and an optical phase change recording layer were exposed to a focused laser beam with wavelength of 69Ohm. It is shown that, with a random Ag-SiN layer deposited above the recording layer. Calculation by the finite difference time domain method of a 4Ohm-thick SiN film under a Gaussian beam irradiation has been carried out to simulate the near-field distribution in the film, which showed a huge local near-field intensity enhancement of about 200 times if small Ag particles with diameter of 6 nm were modelled inthe SiN film in the central region of the in cident laser spot.     

Estimation of biophysical properties of cell exposed to electric field

Excitable media,such as cells,can be polarized and magnetized in the presence of an external electromagnetic field.In fact,distinct geometric deformation can be induced by the external electromagnetic field,and also the capacitance of the membrane of cell can be changed to pump the field energy.Furthermore,the distribution of ion concentration inside and outside the cell can also be greatly adjusted.Based on the theory of bio-electromagnetism,the distribution of field energy and intracellular and extracellular ion concentrations in a single shell cell can be estimated in the case with or without external electric field.Also,the dependence of shape of cell on the applied electronic field is calculated.From the viewpoint of physics,the involvement of external electric field will change the gradient distribution of field energy blocked by the membrane.And the intracellular and extracellular ion concentration show a certain difference in generating timevarying membrane potential in the presence of electric field.When a constant electric field is applied to the cell,distinct geometric deformation is induced,and the cell triggers a transition from prolate to spherical and then to oblate ellipsoid shape.It is found that the critical frequency in the applied electric field for triggering the distinct transition from prolate to oblate ellipsoid shape obtains smaller value when larger dielectric constant of the cell membrane and intracellular medium,and smaller conductivity for the intracellular medium are used.Furthermore,the effect of cell deformation is estimated by analyzing the capacitance per unit area,the density of field energy,and the change of ion concentration on one side of cell membrane.The intensity of external applied electric field is further increased to detect the change of ion concentration.And the biophysical effect in the cell is discussed.So the deformation effect of cells in electric field should be considered when regulating and preventing harm to normal neural activities occurs in a nervous system.     

Copper Ion Beam Irradiation-Induced Effects on Structural,Morphological and Optical Properties of Tin Dioxide Nanowires

The 0.8 MeV copper(Cu) ion beam irradiation-induced effects on structural,morphological and optical properties of tin dioxide nanowires(SnO_2 NWs) are investigated.The samples are irradiated at three different doses5 × 10~(12) ions/cm~2,1 × 10~(13) ions/cm~2 and 5 × 10~(13) ions/cm~2 at room temperature.The XRD analysis shows that the tetragonal phase of SnO_2 NWs remains stable after Cu ion irradiation,but with increasing irradiation dose level the crystal size increases due to ion beam induced coalescence of NWs.The FTIR spectra of pristine SnO_2NWs exhibit the chemical composition of SnO_2 while the Cu-O bond is also observed in the FTIR spectra after Cu ion beam irradiation.The presence of Cu impurity in SnO_2 is further confirmed by calculating the stopping range of Cu ions by using TRM/SRIM code.Optical properties of SnO_2 NWs are studied before and after Cu ion irradiation.Band gap analysis reveals that the band gap of irradiated samples is found to decrease compared with the pristine sample.Therefore,ion beam irradiation is a promising technology for nanoengineering and band gap tailoring.     

Selective triggering of phase change in dielectrics by femtosecond pulse trains based on electron dynamics control

In this study we experimentally reveal that the phase change mechanism can be selectively triggered by shaping femtosecond pulse trains based on electron dynamics control (EDC), including manipulation of excitations, ionizations, densities, and temperatures of electrons. By designing the pulse energy distribution to adjust the absorptions, excitations, ionizations, and recombinations of electrons, the dominant phase change mechanism experiences transition from nonthermal to thermal process. This phenomenon is observed in quadruple, triple, and double pulses per train ablation of fused silica separately. This opens up possibilities for controlling phase change mechanisms by EDC, which is of great significance in laser processing of dielectrics and fabrication of integrated nano- and micro-optical devices.     

Fabrication of grating structures on silicon carbide by femtosecond laser irradiation and wet etching

A method for fabricating deep grating structures on a silicon carbide(SiC) surface by a femtosecond laser and chemical-selective etching is developed.Periodic lines corresponding to laser-induced structure change(LISC)are formed by femtosecond laser irradiation,and then the SiC material in the LISC zone is removed by a mixed solution of hydrofluoric acid and nitric acid to form grating grooves.Grating grooves with a high-aspect ratio of approximately 25 are obtained.To obtain a small grating period,femtosecond laser exposure through a phase mask was used to fabricate grating structures with a 1.07 μm period on the surface of the SiC.     

Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation

This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deep-submicron MOSFETs.Upon the heavy ion track through the device,it can lead to displacement damage,including the vacancies and the interstitials.As the featured size of device scales down,the damage can change the dopant distribution in the channel and source/drain regions through the generation of radiation-induced defects and thus have significant impacts on their electrical characteristics.The measured results show that the radiation-induced damage can cause DC characteristics degradations including the threshold voltage,subthreshold swing,saturation drain current,transconductance,etc.The radiation-induced displacement damage may become the dominant issue while it was the secondary concern for the traditional devices after the heavy ion irradiation.The samples are also irradiated by Co-60 gamma ray for comparison with the heavy ion irradiation results.Corresponding explanations and analysis are discussed.     

One-dimensional hybrid simulation of the electrical asymmetry effect caused by the fourth-order harmonic in dual-frequency capacitively coupled plasma

A one-dimensional hybrid model was developed to study the electrical asymmetry effect(EAE) caused by the fourthorder harmonic in a dual-frequency capacitively coupled Ar plasma.The self-bias voltage caused by the fourth-order frequency changes periodically with the phase angle,and the cycle of self-bias with the phase angle is π/2,which is half of that in the second-order case.The influence of the phase angle between the fundamental and its fourth-order frequency on the ion density profiles and the ion energy distributions(IEDs) were studied.Both the ion density profile and the IEDs can be controlled by the phase angle,which provides a convenient way to adjust the sheath characters without changing the main discharge parameters.