共查询到20条相似文献,搜索用时 0 毫秒
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Hakan Dogan Robert G. Meyer 《Solid-State Circuits, IEEE Journal of》2007,42(3):529-539
Gain control elements are widely used in communication systems both to limit the incident power to the circuitry and to control the amplitude of the transmitted signal. Attenuators are one way of controlling the signal amplitude. The distortion performance of common CMOS attenuator topologies is investigated in this work. CMOS device equations that model the device in different regions of operation and which also model short channel effects are used for calculating distortion performance. Calculated distortion is compared with simulation results and experimental data, and qualitative explanations of the distortion curves as well as the deviation between different sources of data are given. Potential improvements in linearity performance of attenuators via circuit design techniques have also been discussed 相似文献
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使用CMOS RFIC设计2.4GHz蓝牙收发器需要在设计过程中的所有阶段对关键性能进行仔细的验证。这可以通过EDA软件的几个功能来实现,如提供晶片厂模型库,带有蓝牙测试信号的系统兼容性测试模板,还可以和测试仪器的链接,验证仿真数据和实际测量结果是否一致。 相似文献
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Junjie Gu Haipeng Fu Weicong Na Qijun Zhang Jianguo Ma 《Journal of Electronic Testing》2017,33(1):133-140
This paper presents fast and automated electromigration (EM) reliability modeling by using automated modeling generation (AMG) algorithm. The AMG converts human based EM modeling into an automated modeling and simulation process with the help of ANSYS parametric design language (APDL) program. For automating the neural model training process, training-driven adaptive sampling is applied to integrate data generation, data distributions determination, model structure adaptation, training and testing into a unified framework. Fully automated reliability model construction and simulation is achieved for the first time. This method effectively shortens the period of EM modeling by using dynamic sampling method. Furthermore, the heat generation from active devices has been considered to describe the heat effect on the interconnect reliability. Through the proposed technique, the allowable sizes, temperature and output power of a CMOS radio frequency power amplifier (RF PA) are derived to give reliability criteria for PA designer. 相似文献
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C波段CMOS射频前端电路设计与实现 总被引:1,自引:0,他引:1
设计了一款工作在C波段(4.2 GHz)的CMOS射频前端电路,电路包括低噪声放大器和Gilbert型有源双平衡混频器.其中低噪声放大器采用共源和共栅放大器方式,实现了单端输入到差分输出的变换;而混频器的输出端采用电感负载形式.电路采用SMIC 0.18μmRF工艺实现,测试结果表明,混频器的输出频率约为700 MHz,电路的功率增益为24 dB,单边带噪声指数为8 dB,在1.8 V工作电压下,电路总功耗为36 mW. 相似文献
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A CMOS radio-frequency power amplifier including on-chip matching networks has been designed in a 0.6-μm n-well triple-metal digital CMOS process, and optimized using a simulated-annealing-based custom computer-aided design tool. A compact inductor model enables the incorporation of parasitics as an integral part of the parasitic-aware design and CAD optimization; low-Q metal3 spiral inductors are used in the input and output matching networks. A 3-V 85-mW balanced fully integrated Class-C power amplifier with a measured drain efficiency of 55% at 900 MHz has been designed, optimized, integrated, and tested 相似文献
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LI En-ling WANG Xue SONG Lin-hong YUAN Yong-xia YU Fa-da LIU Man-cang 《中国邮电高校学报(英文版)》2009,16(3):103-107
A voltage controlled oscillator (VCO) module is designed, which can be used for the third generation mobile communication (3G) system. The circuit is simulated by spectre radio frequency (RF) by TSMC 0.25 μm CMOS process. During the simulation, the performance parameters of the designed VCO are as follows: tuning range 1.804 GHz-2.039 GHz, phase noise - 136.457 dBc/Hz @1 MHz, - 146.045 dBc/Hz@3 MHz, supply voltage 2.5 V, voltage output rate of 0.8 V-2.6 V, power consumption 25 mW. The layout of the related circuit is drawn by the Virtuoso Layout Editor. 相似文献
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2.1 GHz射频CMOS混频器设计 总被引:2,自引:0,他引:2
设计了一个用于第三代移动通信的2.1 GHz CMOS下变频混频器,采用TsMC 0.25 μm CMOS工艺.在设计中,用LC振荡回路作电流源实现低电压;并用增大电流和降低跨导的方法提高线性度.在Cadence RF仿真器中对电路进行了模拟,在1.8 V电源电压下,仿真结果为:1 dB压缩点PtdB-10.65 dBm,lIP3 1.25 dBm,转换增益7 dB,噪声系数10.8 dB,功耗14.4 mW,且输入输出端口实现了良好的阻抗匹配.并用Cadence中的Virtuoso Layout Editor软件绘制了电路的版图. 相似文献
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A design method for a broadband RF CMOS low noise amplifier (LNA) is presented. The shape of the transfer function fits the classical filtering response such as Butterworth or Tchebycheff. This method uses an input matching cell with only parallel LC resonators coupled with admittance inverters realised by series coupling capacitors. An LNA for the 7.2 to 8.6 GHz frequency band designed with this method in a 0.13 /spl mu/m RF CMOS process shows a 3.9 dB noise figure with a voltage gain of 28 dB at 8 GHz with a power consumption of 3.9 mW and a surface consumption of 0.4 mm/sup 2/. 相似文献
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Yue Wu Chunlei Shi Xiaohui Ding Mohammed Ismail Håkan Olsson 《Analog Integrated Circuits and Signal Processing》2002,33(3):239-248
In this paper, a class of CMOS biquadratic filter suitable to work at VHF/RF frequency range is presented. The proposed circuit has a simple structure which is analyzed and designed according to a universal G
m-C biquad filter. Simulation and experimental results show that these filters can work in GHz range and have wide tuning range. 相似文献
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采用0.18μm CMOS SOI工艺技术研制加工的单刀双掷射频开关,集成了开关电路、驱动器和静电保护电路。在DC~6GHz频带内,测得插入损耗0.7dB@2GHz、1dB@4GHz、1.5dB@6GHz,隔离度37dB@2GHz、31dB@4GHz、27dB@6GHz,在5GHz以内端口输入输出驻波比≤1.5:1,输入功率1dB压缩点达到33dBm,IP3达到42dBm。可应用于移动通信系统。 相似文献
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Design method for fully integrated CMOS RF LNA 总被引:2,自引:0,他引:2
An efficient method for fully integrated RF CMOS LNA design is presented. A particular input matching topology enables inductor values to be selected in order to be integrated fully and to minimise the input losses. Moreover, an active device sizing method is used to achieve a 50 /spl Omega/ input impedance with a low noise factor. Simulations show a 3.0 dB noise figure at 2.45 GHz for a power consumption of 10 mW in a 0.28 /spl mu/m RF CMOS process. 相似文献
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A new architecture of CMOS low voltage downconversion mixer is presented.With 1.452GHz LO input and 1.45GHz RF input,simulation results show that the conversion gain is 15dB,IIP3 is -4.5dBm,NF is 17dB,the maximum transient power dissipation is 9.3mW,and DC power dissipation is 9.2mW.The mixer’s noise and linearity analyses are also presented. 相似文献
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提出了一种低电压高增益CMOS下变频混频器的新结构.这个结构避免了堆叠晶体管,因此可以在低电压下工作.在LO信号的频率为1.452GHz,RF信号频率为1.45GHz的情况下,仿真结果表明:混频器的增益为15dB,ⅡP3为-4.5dBm,NF为17dB,最大瞬态功耗为9.3mW,直流功耗为9.2mW.并对该混频器的噪声特性和线性度进行了分析. 相似文献
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Lu Liu ZhiHua Wang 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2006,53(3):212-216
A CMOS low-voltage downconversion mixer is presented. With 1.69-GHz local oscillator signal input and 1.63-GHz RF signal input, measurement results show that the conversion gain is 6.631 dB, input-referred third-order intercept point is 1.51 dBm, single-sideband noise figure is 21.43 dB with a 1.8-V supply voltage. The mixer's noise and linearity analysis, layout technique to maximize RF performance and minimize noise performance are also presented in this paper. 相似文献