Electro-optical characterization of Ge–Se–Te glasses

Chalcogenide bulk glasses Ge₂₀Se_80−xTe_x for x(0,15) have been prepared by systematic replacement of Se by Te. Selected glasses have been doped with Ho, Er and Pr, and samples have been characterized by transmission spectroscopy, measurements of dc electrical conductivity and low-temperature photoluminescence. Absorption coefficients have been derived from measured transmittance and estimated reflectance. Arrhenius plots of dc electrical conductivity, in the measured temperature range 300–460 K, are characterized by single activation energies roughly equal to the half of the optical gap. Activation energies deduced from Arrhenius plots reveal a systematic decrease with increasing Te content. Similarly, both absorption and low-temperature photoluminescence spectra reveal shifts of absorption edge and/or dominant luminescence band to longer wavelength due to Te → Se substitution. Samples doped with Ho and Er exhibit a strong luminescence at 1200 and 1540 nm due to ⁵I₆ → ⁵I₈ and ⁴I_13/2 → ⁴I_15/2 transitions of Ho³⁺ and Er³⁺ ions, respectively. Pr doped samples exhibit only a relatively weak luminescence peak at 1590 nm, which we tentatively assign to ³F₃ → ³H₄ transition of Pr³⁺ ions. Absorption of the base glass luminescence at 1460 and 1520 nm has been observed at low temperature on samples doped with Pr and Er, respectively.     

Broadband near-infrared emission from Bi–Er–Tm Co-doped germanate glasses

Bi–Er–Tm co-doped germanate glasses and Bi, Er, Tm singly doped glasses were prepared and characterized through absorption spectra, NIR emission spectra and decay lifetime. A super broadband near-infrared emission from 1000 nm to 1600 nm, covering the whole O, E, S, C, and L bands, was observed in the Bi–Er–Tm co-doped samples due to the result of the overlapping of the Bi related emission band (centered at 1300 nm), the emission from Er^{3+ 4}I_13/2 → ⁴I_15/2 transition (centered at 1534 nm) as well as the emission from Tm^{3+ 3}H₄ → ³F₄ transition (centered at 1440 nm), which is essential for broadly tunable laser sources and broadband optical amplifiers. The energy transfer process was also discussed at the end of the paper.     

On the optical absorption and photoluminescence of Er-doped Ge–S–Ga glasses

We have studied the absorption and photoluminescence (PL) of (GeS₂)₈₀(Ga₂S₃)₂₀ glasses doped with 0.17, 0.35 and 1.05 at.% Er. The sharp bands centered at around 660, 810, 980 and 1540 nm in the absorption spectra can be associated with intra 4f-shell transitions in Er³⁺ ions from ⁴I_15/2 level to ⁴F_9/2, ⁴I_9/2, ⁴I_11/2 and ⁴I_13/2 levels, respectively. It has been observed that the absorption edge shifts towards lower energies with increasing Er concentration. A decrease in the absorption coefficient in the range of weak absorption, as well as the host luminescence in more heavily doped samples has been established, which may be associated with less native defects in the glassy structure. The role of excitation wavelength (λ_ex) on the PL emission band at 1540 nm using different Er³⁺-doping level has been evaluated. It has been found that the total PL band remains almost the same under direct excitation of Er³⁺ ions (at λ_ex = 644, 770 and 982 nm), while it becomes narrower under the host excitation (at λ_ex = 532 nm).     

Compositional trends in low-temperature photoluminescence of heavily Er-doped GeS2–Ga2S3 glasses

The influence of temperature and glass composition on the photoluminescence (PL) efficiency of Er³⁺ ions embedded in (GeS₂)_100?x(Ga₂S₃)_x (x = 20, 25 and 33 mol%) glasses has been studied. The typical 4f–4f emission bands of Er³⁺ ions at around 830, 1000 and 1550 nm have been observed in the whole investigated temperature range from 300 K down to 10 K for all the compositions. New 4f–4f luminescence bands, in excess of the three basic ones, have been observed at 670, 870, 1120, 1260 and 1350 nm for (GeS₂)₇₅(Ga₂S₃)₂₅ glass composition, and are tentatively assigned to ²H_9/2 → ⁴I_11/2, ⁴G_11/2 → ⁴F_9/2, ²H_11/2 → ⁴I_11/2, ⁴F_7/2 → ⁴I_9/2 and ⁴F_3/2 → ⁴I_9/2 transitions, respectively. Thus a considerable influence of GeGaS host composition on the efficiency of 4f–4f transitions of embedded Er³⁺ ions is documented with the outcome that (GeS₂)₇₅Ga₂S₃)₂₅ composition appears near optimal for the emission efficiency of Er³⁺ ions. With decreasing temperature the PL efficiency is enhanced considerably with pronounced narrowing of all bands. In the case of the strongest PL band at ~ 1550 nm, corresponding to ⁴I_13/2 → ⁴I_15/2 transition, the narrowing at low temperature is further accompanied by the resolution of well pronounced fine structure due to “crystal field” splitting of corresponding electronic terms. The relationship between the photoluminescence and reflectance spectra as a function of Er content has been discussed.     

Structural and optical spectroscopy of LiNbO3:Tm nanocrystals embedded in a SiO2 glass matrix

Transparent SiO₂:Li₂O:Nb₂O₅ glass doped with Tm³⁺ has been prepared by the sol–gel method, and heat-treated in air (HT) at temperatures between 500 and 800 °C. X-ray diffraction (XRD) patterns and Raman spectroscopy show SiO₂ and LiNbO₃ phases in samples HT above 650 °C, and a NbTmO₄ phase for T > 750 °C. The XRD SEM analysis show increasing particle size and number with the increase of HT temperature. Intra-4f¹² transitions due to Tm³⁺ ion dispersed in the matrix are observed in samples with T > 650 °C. The luminescence is dominated by the ¹G₄ → ³F₄ (～650 nm), ¹D₂ → ³F₃ (～780 nm), ³H₄ → ³H₆ (～800 nm), ³H₅ → ³H₆ (～1200 nm) and ³H₄ → ³F₄ (～1500 nm) transitions under resonant excitation to the ion levels.     

Thermal and optical properties of CuO–BaO–B2O3–P2O5 glasses

CuO-doped barium borophosphate glasses in a series of xCuO–(45 − x)BaO–10B₂O₃–45P₂O₅ in molar ratio with x = 0–15 mol% were prepared by a melt-quenching technique. All the glasses had excellent thermal stability against crystallization. Glass transition temperature, thermal expansion coefficient and molar volume decrease with increasing CuO concentration. The linear relationship between the absorption coefficient and CuO concentration exists for a peak wavelength in the transitions of ²A_1g → ²B_1g, ²B_2g → ²B_1g, ²E_g → ²B_1g. The relationship between the properties and glass structure evaluated by Raman spectroscopy is discussed.     

Characterization,luminescence and EPR investigations of Eu2+ activated strontium aluminate phosphor

Strong blue-green light emitting Eu doped SrAl₂O₄ phosphor was synthesized by a low-temperature initiated, self-propagating and gas producing combustion process in a very short time (<5 min). The prepared powder was characterized by X-ray diffraction, Fourier-transform infrared spectrometry and scanning electron microscopy. The excitation spectrum shows a peak at 397 nm. Upon excitation at 397 nm, the emission spectrum exhibits a well defined broad band with maximum at 493 nm corresponding to 4f⁶5d → 4f⁷ transition. Electron paramagnetic resonance (EPR) measurements at X-band showed low field signals due to Eu²⁺ ions in SrAl₂O₄:Eu.     

Growth and characterization of InxBi2−xTe3 single crystals

The V–VI group narrow band gap compounds are known to have important photoconductivity and thermoelectric properties. Among these, Bi₂Te₃ is the most potential material for thermoelectric devices having a direct band gap of 0.16 eV. There has been ample study reported on crystal growth and polycrystalline thin films of both pure and indium doped Bi₂Te₃ pertaining to its basic semiconducting, optoelectronic and thermoelectric properties. It has been shown that on exceeding certain limiting concentration of indium in Bi₂Te₃, the conductivity changes from p-type to n-type. However, there is hardly any work reported in literature on crystal growth, dislocation etching and optical band gap of In_xBi_2?xTe₃ (x=0.1, 0.2, 0.5) single crystals. The authors have grown their single crystals using the zone melting method. The freezing interface temperature gradient of 70 °C/ cm^?1 has been found to yield the best quality crystals obtainable at the growth rate of 0.4 cm/h. The as-grown crystals have been observed to exhibit certain typical features on their top free surfaces. The crystals have been characterized using XRD technique. A chemical dislocation etchant has been used for estimating perfection in terms of dislocation density in the crystals. The optical absorption was measured in the wave number range 500 to 4000 cm^?1. The transitions in all the cases were observed to be allowed direct type. The detailed results are reported in the paper.     

Network topological thresholds in gallium doped As–Te glasses – Electrical and thermal investigations

Electrical switching and differential scanning calorimetric studies are undertaken on bulk As₂₀Te_80−xGa_x glasses, to elucidate the network topological thresholds. It is found that these glasses exhibit a single glass transition (T_g) and two crystallization reactions (T_c1 & T_c2) upon heating. It is also found that there is only a marginal change in T_g with the addition of up to about 10% of Ga; around this composition an increase is seen in T_g which culminates in a local maximum around x = 15. The decrease exhibited in T_g beyond this composition, leads to a local minimum at x = 17.5. Further, the As₂₀Te_80−xGa_x glasses are found to exhibit memory type electrical switching. The switching voltages (V_T) increase with the increase in gallium content and a local maximum is seen in V_T around x = 15. V_T is found to decrease with x thereafter, exhibiting a local minimum around x = 17.5. The composition dependence of T_c1 is found to be very similar to that of V_T of As₂₀Te_80−xGa_x glasses. Based on the present results, it is proposed that the composition x = 15 and x = 17.5 correspond to the rigidity percolation and chemical thresholds, respectively, of As₂₀Te_80−xGa_x glasses.     

Influence of Ce codoping and H2 pre-loading on Er/Yb-doped fiber: Radiation response characterized by Confocal Micro-Luminescence

Confocal microscopy luminescence measurements were applied to study the X-ray radiation response of Er/Yb-doped optical fibers in connection with H₂ pre-loading and with the addition of another lanthanide element (Cerium) in the core composition. Laser excitations at 488 nm and 325 nm allow deriving the emission and absorption pattern of Er³⁺, the latter derived from the dips appearing in a wide luminescence band related to defects in silica. We found that the luminescence spectrum of the X-irradiated Er/Yb-doped core fiber evidences an increase in the emission intensity around 520 and 660 nm; in contrast, no changes are induced by radiation neither after H₂ pre-loading nor when the Cerium is added to the core composition. Both treatments reduce the generation of defects in the Er-doped fibers thus providing hardness in the radiative environment.     

Judd Ofelt calculation of quantum efficiencies and branching ratios of Nd3+ doped glasses

This paper presents the optical characterization of Nd³⁺ lead silicate glasses (SiO₂–Na₂CO₃–PbO–ZnO), synthesized by means of the fusion method. Absorption, luminescence, lifetime and Raman spectroscopy measurements were performed in order to determine the radiative properties of the glasses. The near infrared luminescence exhibited the typical Nd³⁺ bands, particularly the band at 1060 nm (⁴F_3/2 → ⁴I_11/2). The calculated branching ratios for the ⁴F_3/2 level are: β (9/2) = 35%, β (11/2) = 55%, β(13/2) = 9.5% and β (15/2) = 0.5%. The estimated quantum efficiency was about 90%, based on comparison with the Judd Ofelt theory and experimental lifetime measurements.     

Spectroscopic properties and energy transfer in Ga2O3– Bi2O3–PbO–GeO2 glasses codoped with Tm3+ and Ho3+

This paper reports on the spectroscopic properties and energy transfer in Ga₂O₃–Bi₂O₃–PbO–GeO₂ glasses doped with Tm³⁺ and/or Ho³⁺. From the optical absorption spectra of Tm³⁺, Judd–Ofelt intensity parameters, radiative transitions probabilities, fluorescence branching ratios, and radiative lifetimes have been calculated using Judd–Ofelt theory. The measured differential scanning calorimetry result shows that the glass exhibits excellent stability against devitrification with ΔT = 129 °C. The measured luminescence spectra show that the ³H₄ → ³F₄ transition of Tm³⁺ upon 808 nm laser diode excitation possess a broad full width at half-maximum of ∼126 nm. The maximum value calculated stimulated emission cross-section and the measured lifetime of ³H₄ level from the 1.47-μm transition are ∼4.73 × 10⁻²¹ cm² and ∼0.239 ms, respectively. It is noticed that codoping of Ho³⁺ could significantly enhanced the ratio of the intensity of 1.47–1.80 μm by energy transfer via Tm³⁺: ³F₄ → Ho³⁺: ⁵I₇.     

EPR and optical studies of Mn2+ ions in Li2O–Na2O–B2O3 glasses – An evidence of mixed alkali effect

EPR and optical absorption spectra of 0.5 mol% MnO₂ doped xLi₂O–(30 − x)Na₂O–69.5B₂O₃ (5 ⩽ x ⩽ 25) glasses have been studied. The EPR spectra exhibit resonance signals characteristic of Mn²⁺ ions. The resonance signal at g ≅ 2.0 is due to Mn²⁺ ions in an environment close to octahedral symmetry, whereas the resonances at g ≅ 4.3 and g ≅ 3.3 are attributed to the rhombic surroundings of the Mn²⁺ ions. The ionic character (A), the number of spins participating in resonance (N), optical band gap energies (E_opt) and Urbach energies (ΔE) show the mixed alkali effect (MAE) with composition. The present study gives an indication that the size of alkalis we choose, is also an important contributing factor in showing the MAE. The variation of N with temperature obeys the Boltzmann law. The optical absorption spectra show a single broad band at ∼21 000 cm⁻¹ corresponding to the transition ⁶A_1g(S) → ⁴T_1g(G) which exhibits a blue shift with x. The theoretical values of optical basicity (Λ_th) have also been evaluated.     

Thermally reversing window in Ge15Te85 − xInx glasses: Nanoindentation and micro-Raman studies

Nanoindentation studies on Ge₁₅Te_85 ? xIn_x glasses indicate that the hardness and elastic modulus of these glasses increase with indium concentration. While a pronounced plateau is seen in the elastic modulus in the composition range 3 ≤ x ≤ 7, the hardness exhibits a change in slope at compositions x = 3 and x = 7. Also, the density exhibits a broad maximum in this composition range. The observed changes in the mechanical properties and density are clearly associated with the thermally reversing window in Ge₁₅Te_85 ? xIn_x glasses in the composition range 3 ≤ x ≤ 7. In addition, a local minimum is seen in density and hardness around x = 9, the chemical threshold of the system. Further, micro-Raman studies reveal that as-quenched Ge₁₅Te_85 ? xIn_x samples exhibit two prominent peaks, at 123 cm^? 1 and 155 cm^? 1. In thermally annealed samples, the peaks at 120 cm^? 1 and 140 cm^? 1, which are due to crystalline Te, emerge as the strongest peaks. The Raman spectra of polished samples are similar to those of annealed samples, with strong peaks at 123 cm^? 1 and 141 cm^? 1. The spectra of lightly polished samples outside the thermally reversing window resemble those of thermally annealed samples; however, the spectra of glasses with compositions in the thermally reversing window resemble those of as-quenched samples. This observation confirms the earlier idea that compositions in the thermally reversing window are non-aging and are more stable.     

Recent photoluminescence research on chalcogenide glasses for photonics applications

The optical properties of GeGaSe glasses doped with Er by the addition of Er₂S₃ have been investigated. Optically uniform glasses have been prepared using stoichiometric compositions with 9–12 at.% Ga and doped with 0.5–2 at.% Er. The radiative lifetime of the ⁴I_13/2 → ⁴I_15/2 transition has been estimated to be equal to 1.78 ms using the Judd–Ofelt analysis. The photoluminescence lifetime distribution has been investigated in optimized glasses using Quadrature Frequency-Resolved Spectroscopy at room and liquid helium temperatures and at different emission wavelengths. All lifetime distributions were found to be sharp peaks centered at ∼2 ms. A radiation diffusion model has been used to understand the discrepancy between measured photoluminescence spectra and those predicted by the McCumber theory. The model predicts a radiative lifetime of the ⁴I_13/2 → ⁴I_15/2 transition to be around 1.72 ms and a much longer non-radiative lifetime. These results assume quasi-uniform distribution of Er³⁺ ions with negligible concentration-self-quenching and negligible rate of non-radiative relaxation from ⁴I_13/2 to ⁴I_15/2.     

About diffusion mechanism in silica liquid under pressure

We perform a molecular dynamic simulation to study the diffusion mechanism in silica liquid under pressure up to 25 GPa and at temperature of 3000 K. We find that total O―Si―O angle distribution can be expressed by a simple relation between partial O―Si―O angle distribution and fractions of units SiO_x. Specifically, we demonstrate that these liquids consist of identical units SiO₄, SiO₅ and SiO₆ and have common partial O―Si―O angle distribution. We also show that each particle undergoes a series of stages where the particle locates in unchanged unit SiO_x, x = 3, 4, … 7 or OSi_y, y = 1, 2, 3, 4. The diffusivity strongly depends on the rate of transitions Si^ξ → Si^ξ ± 1 and O^ζ → O^ζ ± 1 which is significantly different between low- and high-pressure samples. For low-pressure sample the transitions Si⁴ → Si⁵, Si⁵ → Si⁴, O² → O³ and O³ → O² are dominant, meanwhile for high-pressure sample there are transitions Si^ξ → Si^ξ ± 1 with ξ = 4, 5, 6 and O^ζ → O^ζ ± 1 with ζ = 2, 3, 4. This finding may be common for diffusion in all network-forming liquids. The simulation also reveals the spatially heterogeneous dynamics in low-pressure liquid where a large cluster of immobile particle exists for the time that a number of particles move over several inter-particle distances.     

Glass composition dependence of luminescence due to Ge2+ center in germanate glasses

Germanate glasses were prepared by the melt-quenching method using an assembled hot-thermocoupler equipped in a sample chamber of a fluorescence spectrometer, and subsequently their luminescence and excitation spectra were measured. In the GeO₂ glass, luminescence bands due to the Ge²⁺ center appeared at the central wavelengths of 300 and 395 nm, their excitation bands being at 250 and 330 nm, respectively. In the (100 − x)GeO₂ − xM_mO_n glasses, for M_mO_n = B₂O₃ (x ≦ 50), SiO₂ (x ≦ 40), and Al₂O₃ (x ≦ 2), the luminescence intensity and therefore the amount of the Ge²⁺ center increased with increasing the content of M_mO_n, where M^(2n/m)+ ions (B³⁺, Si⁴⁺, and Al³⁺) have lower basicities than a Ge⁴⁺ ion. Contrarily, for M_mO_n = Li₂O (x ≦ 30), Na₂O (x ≦ 20), K₂O (x ≦ 20), CaO (x ≦ 20), SrO (x ≦ 3), BaO (x ≦ 15), ZnO (x ≦ 20), Ga₂O₃ (x ≦ 10), Sb₂O₃ (x ≦ 20), Bi₂O₃ (15 ≦ x ≦ 25), TiO₂ (x ≦ 3), and Nb₂O₅ (x ≦ 10), the luminescence intensity and the amount of the Ge²⁺ center rapidly decreased with increasing the amount of additives and disappeared, where M^(2n/m)+ ions (Li⁺, Na⁺, K⁺, Ca²⁺, Sr²⁺, Ba²⁺, Zn²⁺, Ga³⁺, Sb³⁺, Bi³⁺, Ti⁴⁺, and Nb⁵⁺) have higher basicities than a Ge⁴⁺ ion.     

Luminescent materials consisting of Eu(III) ions complexed in heteropolyoxometalates incorporated into silica xerogels

Luminescent materials based on the energy transfer effect consist of heteropolyoxometalates of the type K₁₃[Eu(SiMo_xW_11−xO₃₉)₂] incorporated into xerogel matrices. Results of our experiments suggest that not only the composition parameter x (where x = 1, 3 and 5) of the salts with Eu(III) complex but also the type of the matrix influence the luminescent properties of these materials. The luminescent samples were characterized by such luminescence parameters as emission intensity, luminescence lifetime and quantum yield. The highest emission intensity of Eu(III) ions was exhibited by the salt with x = 1 incorporated into a silicate modified with 3-glycidoxypropyl groups. The longest lifetime was found in the material with a methylated silicate matrix with the same salt. For the complexed Eu(III) ions in these materials there is a correlation between emission intensity changes of the ⁵D₀ → ⁷F₂ band and the quantum yield. The materials with a high organic content in matrices such as the silicates with 3-glycidoxypropyl groups (either with closed or opened epoxy cycles) are more thermally unstable and they undergo larger photochemical degradation during exposure on UV radiation than the systems with limited organic content.     

Tb3+-impregnated,non-porous silica glass possessing intense green luminescence under UV and VUV excitation

A colorless transparent luminescence material was successfully prepared by impregnation of leached, porous glass with Tb³⁺ ions followed by reductive sintering in a CO atmosphere. Tb³⁺ emissions under ultraviolet (UV) and vacuum ultraviolet (VUV) excitation clearly showed the most intense emission band to be situated at 543 nm, which corresponds to the ⁵D₄ → ⁷F₅ transition. Sintering of the Tb glass in a reducing atmosphere resulted in a significant enhancement of Tb³⁺ emission intensity in comparison with sintering in air. The presence of traces of cerium ions was verified in Tb glasses, and more Ce³⁺ ions were produced as a result of the reductive sintering. The increase in Ce³⁺ ions was believed to be mainly responsible for the enhancement of ⁵D₃ → ⁷F_j and ⁵D₄ → ⁷F_j transitions from Tb³⁺ ions owing to an energy transfer channel. A clearly defined difference in the spectral energy distribution of Tb³⁺ emissions was found for 231 nm UV and 160 nm VUV excitation of the Tb glass. The phenomenon of cross relaxation was only observed under 231 nm UV excitation. Different excitation mechanisms were taken into account. Direct excitation of Tb³⁺ ions together with Ce³⁺ ions occurred in the Tb glass under the 231 nm UV light, whereas indirect excitation consisting of host absorption of energy and transfer from host to Tb³⁺ ions occurred under the 160 nm VUV light.