Luminescent vacuum ultraviolet spectroscopy of Cr3+ ions in nanostructured aluminum oxide

Impurity Cr³⁺ centers in submicron and nanostructured Al₂O₃ crystals of different phase compositions at temperatures of 300 and 7.5 K were studied by a luminescent vacuum ultraviolet (VUV) spectroscopy method. Photoluminescence (PL) spectra and the energies of ²E, ⁴T₂, and ⁴T₁ excited states of Cr³⁺ ion depend on the type of crystalline samples phase. The PL excitation spectrum of R-line in α-Al₂O₃ nanoscale crystals is formed by intracenter transitions (2.5–5.5 eV region), by charge transfer band (6.9 eV) and by effective formation of impurity-bound excitons (9.0 eV region). Such impurity-bound excitons correspond to O₂p→Al₃s electron transition in surroundings of an impurity Cr³⁺ center. The efficiency of impurity-bound excitons formation decreases with the increase of the grain size above 100 nm. The size dependence is noticeably shown in PL excitation spectra in VUV region. Excitons bound to impurity centers do not appear in nanostructured δ+θ-Al₂O₃ crystals. The effect of the electron excitation multiplication is observed distinctly in nanostrucured α-Al₂O₃ at an excitation energy above 19 eV (more than 2E_g).     

A time-resolved luminescence spectroscopy study of non-linear optical crystals K2Al2B2O7

We report the results of complex study of luminescence and dynamics of electronic excitations in K₂Al₂B₂O₇ (KABO) crystals obtained using low-temperature luminescence-optical vacuum ultraviolet spectroscopy with sub-nanosecond time resolution under selective photoexcitation with synchrotron radiation. The paper discusses the decay kinetics of photoluminescence (PL), the time-resolved PL emission spectra (1.2–6.2 eV), the time-resolved PL excitation spectra and the reflection spectra (3.7–21 eV) measured at 7 K. On the basis of the obtained results three absorption peaks at 4.7, 5.8 and 6.5 eV were detected and assigned to charge-transfer absorption from O^2? to Fe³⁺ ions; the intrinsic PL band at 3.28 eV was revealed and attributed to radiative annihilation of self-trapped excitons, the defect luminescence bands at 2.68 and 3.54 eV were separated; the strong PL band at 1.72 eV was revealed and attributed to a radiative transition in Fe³⁺ ion.     

Fabrication and luminescent properties of Al2O3:Cr3 + microspheres via a microwave solvothermal route followed by heat treatment

AlOOH:Cr^3 + powders were synthesized via a microwave solvothermal route at 433 K for 30 min and were used as the precursor and template for the preparation of γ-Al₂O₃:Cr^3 + by thermal transformation at 773 K for 2 h in air. The obtained γ-Al₂O₃ based powders were microspheres with an average diameter about 1.9 μm. Photoluminescence (PL) spectra showed that the Al₂O₃:Cr^3 + particles presented a symmetric broad R band at 696 nm without appreciable splitting when excited at 462 nm. It is shown that the 0.04 mol% of doping concentration of Cr^3 + ions in γ-Al₂O₃:Cr^3 + is optimum. According to Dexter's theory, the critical distance between Cr^3 + ions for energy transfer was determined to be 47.54 Å. Based on the corresponding PL spectrum, full width at half maximum (FWHM) of Al₂O₃:Cr^3 + (0.04 mol%) was calculated to be 3.35 nm.     

Absorption,luminescence, and electron paramagnetic resonance of molybdenum ions in CdWO4

A single crystal of cadmium tungstate (CdWO₄) containing approximately 200 ppm of molybdenum was grown by the Czochralski method and then characterized in a series of optical absorption, photoluminescence (PL), photoluminescence excitation (PLE), and electron paramagnetic resonance (EPR) experiments. The Mo⁶⁺ ions substitute for W⁶⁺ ions and serve as recombination sites for electrons and holes when the crystal is exposed to ionizing radiation. A charge-transfer absorption band for the Mo⁶⁺ ions was observed near 320 nm at 10 K. The PL experiments, performed at low temperature with 325 nm excitation, showed a Mo-associated emission peaking near 680 nm. A direct correlation of the 680 nm emission and the 320 nm absorption band was established by the PLE data. When these doped CdWO₄ crystals are exposed at low temperature either to light that is near or above the band gap or to X-rays, the Mo⁶⁺ ions can trap an electron and form stable Mo⁵⁺ ions. The EPR spectrum of the Mo⁵⁺ ions was observed at temperatures near 15 K, and a complete set of parameters describing the g matrix was obtained from an angular dependence study.     

Blue emission in Eu2+ activated MgXAl10O17 (X = Sr,Ca) phosphors

Here we reported photoluminescence properties of Eu²⁺ activated in novel and existing MgXAl₁₀O₁₇ (X = Sr, Ca) phosphor which has been prepared by combustion synthesis at 550 °C under UV and near UV excitation wavelength. The PL emission properties of MgSrAl₁₀O₁₇:Eu²⁺ were monitored at 254 nm and 354 nm respectively keeping emission wavelength at 469 nm. Whereas novel MgCaAl₁₀O₁₇:Eu²⁺ exhibit emission band at 452 nm keeping excitation at 378 nm. These blue emission corresponds to 4f⁶5d¹ → 4f⁷ transition of Eu²⁺ ions. Further phosphor was analyzed by XRD for the confirmation of desired phase and purity.     

Optical properties,luminescence quenching mechanism and radiation hardness of Eu-doped GaN red powder phosphor

We report on the luminescence quenching mechanism of Eu-doped GaN powder phosphor produced with a low-cost, high yield rapid-ammonothermal method. We have studied as-synthesized and acid rinsed Eu-doped GaN powders with the Eu concentration of ～0.5 at.%. The Eu-doped GaN photoluminescence (PL) was investigated with 325 nm excitation wavelength at hydrostatic pressures up to 7.7 GPa in temperature range between 12 K and 300 K. The room temperature integrated Eu³⁺ ion PL intensity from acid rinsed material is a few times stronger than from the as-synthesized material. The temperature dependent PL studies revealed that the thermal quenching of the dominant Eu³⁺ ion transition (⁵D₀ → ⁷F₂) at 622 nm is stronger in the chemically modified phosphor indicating more efficient coupling between the Eu³⁺ ion and passivated GaN powder grains. Furthermore, it was found that thermal quenching of Eu³⁺ ion emission intensity can be completely suppressed in studied materials by applied pressure. This is due to stronger localization of bound exciton on Eu³⁺ ion trap induced by hydrostatic pressure. Furthermore, the effect of 2 MeV oxygen irradiation on the PL properties has been investigated for highly efficient Eu-doped GaN phosphor embedded in KBr–GaN:Eu³⁺ composite. Fairly good radiation damage resistance was obtained for 1.7 × 10¹² to 5 × 10¹³ cm^?2 oxygen fluence. Preliminary data indicate that Eu-doped GaN powder phosphor can be considered for devices in a radiation environment.     

The unusual variations of photoluminescence and afterglow properties in monoclinic ZrO2 by annealing

The raw ZrO₂ is annealed at 600–1550 °C for 6 h. It is found that the emission at 492 nm increases greatly when the annealing temperature is higher than 1200 °C and its afterglow shows a small improvement at 1200–1450 °C and a large enhancement after annealing at 1550 °C. The results that are obtained indicate that the impurity Ti⁴⁺ in ZrO₂ is efficiently reduced to Ti³⁺ when the temperature is higher than 1200 °C, and the increase of Ti³⁺ centers contributes to the large improvement of emission at 492 nm. The thermoluminescence shows that at least two types of traps with different depths (0.65 eV and 1.46 eV) corresponding to oxygen vacancies exist in monoclinic ZrO₂. After annealing at 1200–1450 °C, some new trap clusters related to oxygen vacancies and Ti³⁺ form and causes the small improvement of afterglow at 1200–1450 °C. The large improvement of afterglow after annealing at 1550 °C originates from the sharp increase of proper shallow traps (0.65 eV) in ZrO₂. Accordingly, we present the feasible interpretations and luminescence mechanisms of monoclinic ZrO₂ for our observations.     

Room-temperature photoluminescence in MnF2 under high pressure

A novel two-color photoluminescence (PL) is found in MnF₂ at room temperature (RT) under high pressure. In contrast to the low-temperature PL, the observation of room-temperature PL is unusual in transition-metal concentrated materials like MnF₂ since the de-excitation process at RT is fully governed by energy transfer to non-radiative centers. We show that room-temperature MnF₂ emissions originate in the pressure-induced cotunnite phase. Both the nine-fold Mn²⁺ coordination and the Mn–F–Mn exchange pathway inhibit exciton migration among Mn²⁺, favoring two-band PL at RT. The electronic structure and the excited-state dynamics are investigated by time-resolved emission and excitation spectroscopies under pressure. The two PL bands at 2.34 and 1.87 eV above 15 GPa are assigned to Mn²⁺ emissions arising from two distinct Mn²⁺ centers formed in the MnF₂ high-pressure phase. The microscopic origin of the two-color PL is analyzed in terms of exciton dynamics in the MnF₂ cotunnite structure.     

Preparation and photoluminescence properties of the Sr1.56Ba0.4SiO4:0.04Eu2+ phosphor

The Sr_1.56Ba_0.4SiO₄:0.04Eu²⁺ phosphors were prepared via a combustion reaction and following the calcination method at low temperature. The influences of the amount of the uncommonly used SrCl₂ flux, different calcination temperatures and time on the structure and the photoluminescence (PL) properties of the phosphors were investigated. Under the excitation of 450 nm blue light, the phosphor shows the intense broad emission band from 490 nm to 650 nm, and the emission peak is centered at 553 nm. The luminescence intensity of Sr_1.56Ba_0.4SiO₄:0.04Eu²⁺ was very sensitive to the crystallinity and morphology characteristics of the phosphor. The phosphor calcined at 950 °C for 3 h in 20%H₂/80%Ar atmosphere exhibits improved PL properties due to its high crystallinity and excellent morphology characteristics. The use of the SrCl₂ flux provides a novel way to improve the crystallinity of the silicates phosphors at low preparation temperature.     

Hydrothermal synthesis and the enhanced blue upconversion luminescence of NaYF4:Nd3+,Tm3+,Yb3+

Nd³⁺, Tm³⁺ and Yb³⁺ co-doped NaYF₄ upconversion (UC) material was synthesized by the hydrothermal method. The structure of the sample was characterized by the X-ray diffraction, and its UC luminescence properties were investigated in detail. Under the 980 nm semiconductor laser excitation, its UC spectra exhibited distinct emission peaks at 451 nm, 475 nm and 646 nm respectively. On the basis of the comparison of UC spectra between NaYF₄:Nd³⁺,Tm³⁺,Yb³⁺ and NaYF₄:Tm³⁺,Yb³⁺, it was indicated that the existence of Nd³⁺ ion enhanced the blue emission intensity. The law of luminescence intensity versus pump power proved that the blue emission at 475 nm, and the red emission at 646 nm were the two-photon processes, while the blue emission at 451 nm was a three-photon process.     

Preparation and luminescence properties of terbium-doped lanthanum oxide nanofibers by electrospinning

Terbium-doped lanthanum oxide (La₂O₃:Tb³⁺) nanofibers were prepared by electrospinning followed by calcination at high temperature. Thermogravimetric analyzer (TGA), field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), and photoluminescence (PL) were used to characterize the obtained fibers. The results reveal that the nanofibers have an average diameter of ca. 95±25 nm and are composed of pure La₂O₃ phase. Under the excitation of 274 nm light, the La₂O₃:Tb³⁺ nanofibers exhibit the characteristic emission resulting from the ⁵D₄→⁷F_J (J=3, 4, 5, 6) transitions of Tb³⁺ ions. And the PL emission intensity is stronger than that of their nanoparticle counterparts.     

Crystal structure and photoluminescence correlations in white emitting nanocrystalline ZrO2:Eu3+ phosphor: Effect of doping and annealing

White emitting nanocrystalline ZrO₂:Eu³⁺ phosphors were synthesized by a simple precipitation route without using a capping agent. X-ray diffraction (XRD) study of ZrO₂ and ZrO₂:Eu³⁺samples revealed the presence of monoclinic and tetragonal phases. The monoclinic phase increases with increase in the annealing temperature while the tetragonal phase increases with increase in the concentration of Eu³⁺. This can be attributed to the presence of oxygen vacancy evolved when Zr⁴⁺ is replaced by Eu³⁺. Photoluminescence (PL) emission peaks of Eu³⁺ are observed at 591, 596, 606 and 613 nm on monitoring excitation wavelengths at 250, 286, 394 and 470 nm. The peaks at 591 and 606 nm were found to correlate with the tetragonal phase and those at 596 and 613 nm with the monoclinic phase. Intensities of these peaks are found to change as the crystal structure changes. The lifetime value corresponding to 591 nm peak increases with Eu³⁺ concentration at a particular heating temperature indicating increase of tetragonal phase with respect to monoclinic phase. The CIE co-ordinates of the doped samples were found to be close to that of white color (0.33, 0.33). The changes in the crystal structure of the doped samples due to doping and annealing did not affect the white color emission.     

Photoluminescence of AgGaS2 and CuGaS2 doped with rare-earth impurities

Photoluminescence (PL) related to rare-earth (RE) impurities (Ho, Er and Eu) in AgGaS₂ and CuGaS₂ crystals has been studied. In Ho-doped AgGaS₂ and CuGaS₂, two series of PL lines are observed in 1.86–1.92 eV region and 2.24 eV region, and they are assigned to ⁵F₃–⁵I₇ and ⁵S₂–⁵I₈ transitions of the Ho³⁺ ion, respectively. Similarly, in Er-doped AgGaS₂ and CuGaS₂, Er³⁺-related two PL series are observed: 1.83–1.88 eV region (⁴F_9/2–⁴I_15/2) and 2.22–2.26 eV region (⁴S_3/2–⁴I_15/2). For both Ho and Er impurities, the profile of the PL spectrum in AgGaS₂ is complex, and PL exhibited large number of lines compared with that in CuGaS₂. The differences in PL spectra between this two compounds are related to the crystal field at the cation site and the local atomic arrangement of the RE impurities. This work also refers to the PL band at 2.28 eV observed for the Eu-doped AgGaS₂ crystal.     

Luminescent properties of Eu2+and Dy3+ ions in Ba4Al2O7 phosphor for solid state lighting

In this paper we report the combustion synthesis of rare earth (RE=Eu, Dy) doped Ba₄Al₂O₇ phosphors. Prepared phosphors were characterized by X-ray powder diffraction (XRD), scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FTIR), CIE color co-ordinates and their photoluminescence (PL) properties were also investigated. In case of Ba₄Al₂O₇: Eu²⁺, the emission spectra show unique band centered at 495 nm, which corresponds to the 4f⁶5d¹→4f⁷ transition of Eu²⁺, and PL emission spectra of Dy³⁺ ion under 348 nm excitation give two bands centered at 478 nm (blue) and 575 nm (yellow), which originate from the transitions of ⁴F_9/2→⁶H_15/2 and ⁴F_9/2→⁶H_13/2 of Dy³⁺, respectively. The results indicate that the Eu²⁺ and Dy³⁺ activated Ba₄Al₂O₇ phosphor could find application in solid state lighting.     

Novel EGCG assisted ultrasound synthesis of self-assembled Ca2SiO4:Eu3+ hierarchical superstructures: Photometric characteristics and LED applications

This paper reports for the first time ultrasound, EGCG assisted synthesis of pure and Eu³⁺ (1–5 mol%) activated Ca₂SiO₄ nanophosphors having self-assembled superstructures with high purity. The shape, size and morphology of the product were tuned by controlling influential parameters. It was found that morphology was highly dependent on EGCG concentration, sonication time, pH and sonication power. The probable formation mechanism for various hierarchical superstructures was proposed. The PL studies of Ca₂SiO₄:Eu³⁺ phosphors can be effectively excited by the near ultraviolet (UV) (396 nm) light and exhibited strong red emission around 613 nm, which was attributed to the Eu³⁺ (⁵D₀ → ⁷F₂) transition. The concentration quenching phenomenon was explained based on energy transfer between defect and Eu³⁺ ions, electron–phonon coupling and Eu³⁺–Eu³⁺ interaction. The Judd–Ofelt intensity parameters and radiative properties were estimated by using PL emission spectra. The photometric studies indicate that the obtained phosphors could be a promising red component for possible applications in the field of white light emitting diodes.     

Luminescence and defect studies of YAlO3:Dy3+, Sm3+ single crystals exposed to 100 MeV Si7+ ion beam

Ionoluminescence (IL) and photoluminescence (PL) spectra for different rare earth ions (Sm³⁺ and Dy³⁺) activated YAlO₃ single crystals have been induced with 100 MeV Si⁷⁺ ions with fluence of 7.81×10¹² ions cm^?2. Prominent IL and PL emission peaks in the range 550–725 nm in Sm³⁺ and 482–574 nm in Dy³⁺ were recorded. Variation of IL intensity in Dy³⁺ doped YAlO₃ single crystals was studied in the fluence range 7.81×10¹²–11.71×10¹² ions cm^?2. IL intensity is found to be high in lower ion fluences and it decreases with increase in ion fluence due to thermal quenching as a result of an increase in the sample temperature caused by ion beam irradiation. Thermoluminescence (TL) spectra were recorded for fluence of 5.2×10¹² ions cm^?2 on pure and doped crystals at a warming rate of 5 °C s^?1 at room temperature. Pure crystals show two glow peaks at 232 (Tg₁) and 328 °C (Tg₂). However, in Sm³⁺ doped crystals three glow peaks at 278 (Tg₁), 332 (Tg₂) and 384 °C (Tg₃) and two glow peaks at 278 (Tg₁) and 331 °C (Tg₂) in Dy³⁺ was recorded. The kinetic parameters (E, b s) were estimated using glow peak shape method. The decay of IL intensity was explained by excitation spike model.     

Peculiarities of luminescent properties of cerium doped YAG transparent nanoceramics

Optical and luminescence properties of transparent nanosized cerium doped Y₃Al₅O₁₂ (YAG:Ce) ceramics have been studied. YAG:Ce nanoceramics were obtained by means of low temperature and high pressure (LTHP) sintering method. Nanoceramic samples were sintered in the 2–8 GPa pressure range, whereas Ce³⁺ concentration was varied in the 0.5–5 at. % range. It is shown that, in contrast to the single crystal, a strong rise of absorption coefficient was detected already at wavelength shorter than 400 nm in all nanoceramic samples studied. Furthermore, in nanoceramic samples unusual UV emission band near 3.1 eV was observed, which is not observed in the YAG:Ce single crystal. High pressure applied during nanoceramics sintering leads to significant changes in their optical and luminescence properties.     

5D0→7F1 and 5D0→7F2 transition in europium doped halosulphates for mercury-free lamps

Polycrystalline Na₃SO₄F:Eu and NaMgSO₄F:Eu halosulphate phosphors prepared by a wet chemical method have been studied for its photoluminescence (PL) and thermoluminescence (TL) characteristics. Two well resolved peaks are observed at 593 nm and 614 nm, which are assigned to due to ⁵D₀→⁷F₁ and ⁵D₀→⁷F₂ transitions of Eu³⁺ ions. TL is observed at temperatures between 100 °C and 300 °C. In this paper, we report PL emission spectra of Eu³⁺ and TL glow curves, which are more sensitive than the standard TLD-CaSO₄:Dy. The presented phosphors are applicable for the mercury free lamps and solid state lighting devices.     

Synthesis and photoluminescent behavior of Eu3+-doped alkaline-earth tungstates

Eu³⁺-doped alkaline-earth tungstates MWO₄ (M=Ca²⁺, Sr²⁺, Ba²⁺) were prepared by a polymeric precursor method based on the Pechini process. The polymeric precursors were calcined at 700 °C for 2 h in order to obtain well-crystallized powders and then characterized by X-ray diffraction (XRD), thermogravimetric analysis (TG), scanning electron microscopy (SEM), Fourier-transform infrared (FTIR) spectroscopy and photoluminescence spectroscopy (PL). All prepared samples showed a pure crystalline phase with scheelite-type structure confirmed by XRD. It was noted that the charge-transfer band shifted from 260 to 283 nm when calcium is replaced by strontium. However, this band was not observed for Eu³⁺-doped barium tungstate. Upon excitation at 260 nm, the emission spectra are dominated by the red ⁵D₀→⁷F₂ transition at 618 nm. By analyzing of the emission lines, it was inferred that Eu³⁺ ions occupy low symmetry sites in the host lattice. It was also found that Eu³⁺-doped SrWO₄ displays better chromaticity coordinates and greater luminescence intensity than the other samples.     

Ultraviolet spectroscopy of Pr+3 and its use in making ultraviolet filters

Sputtered deposited thin films of AlN:Pr and GaN:Pr emit in ultraviolet–visible and visible regions of the spectrum, respectively, under electron excitation in cathodoluminescence apparatus. The goal is to study the ultraviolet emission from Pr⁺³ when doped in nitride semiconductor hosts. Luminescence peaks at a wavelength of 295 nm (4.2 eV), 335 nm (3.7 eV) and 385 nm (3.24 eV) are observed as a result from ¹S₀ → ¹G₄, ¹S₀ → ¹D₂ and ¹S₀ → ¹I₆ transitions, respectively. However the ¹S₀ → ¹G₄ and ¹S₀ → ¹D₂ transitions are not observed when Pr⁺³ is doped in GaN host. The bandgap of GaN absorbs the ultraviolet radiation emitted from Pr⁺³ and hence GaN can be used as ultraviolet filter for radiation shielding and protection purposes. AlN is transparent to ultraviolet due to its wide bandgap of 6.2 eV.