γ-ray irradiation induced multiple effects on Ge–As–Se chalcogenide glasses

In this work, multiple effects of γ-ray irradiation on properties of bulk Ge–As–Se chalcogenide glasses were studied. Increased density (ρ), thermal expansion coefficient (α) and decreased optical band gap (E_opt) were observed after irradiation, depending on glass compositions. Glasses with stoichiometric (GeSe₂)_100?x(As₂Se₃)_x compositions showed linear correlations between As₂Se₃ proportion x and irradiation sensitivity, which is expressed by Δρ/ρ, Δα/α and ΔE_opt/E_opt. Nonstoichiometric glasses (Ge₂Se₃)_100?x(As₂Se₃)_x exhibited irregular variations. The phenomena are discussed in terms of chemical bonds transition and structural evolution under γ-ray irradiation.     

Thermal properties of chalcogenide glasses in the GeSe2–As2Se3–CdSe system

In the present work, thermal properties of GeSe₂–As₂Se₃–CdSe glasses were investigated via DSC measurements. The dependences of glass transition temperature and thermal stability on glass composition were discussed. XRD measurement was also performed to validate the effect of cadmium on the thermal properties of glasses. The calculated Avrami exponent was used to demonstrate the three-dimensional growth of crystals in the glass matrices. The crystallization kinetics for the glasses was studied by using the modified Kissinger and Ozawa equations.     

Compositional effects on fluorescence lifetime of Dy3+ ions embedded in chalcogenide Ge–As–S glasses containing very small amount of Ga and CsBr

We have investigated the fluorescence lifetimes of Dy³⁺: 1.3 μm emission in the chalcogenide Ge–As–S glasses with different compositions but identically containing 0.5 mol% Ga and 0.5 mol% CsBr. The measured lifetimes turn out to be sensitive not only to the concentrations of Ga and CsBr but also to compositional variations in the Ge–As–S host glasses. The lifetime is enhanced conspicuously in glass of the S-sufficient compositions, relative to the stoichiometric GeS₂–As₂S₃ composition, while this effect is not significant in the S-exact and S-deficient compositions. We employ Ga K-edge EXAFS analysis to support that the local structural environments of Ga in the modified chalcogenide glasses are closely correlated with the lifetime enhancement effect.     

Electrical and optical properties of the AsTeIn and GeSeIn chalcogenide systems

The influence of indium on the optical and properties of As_2−xTe_3−xxIn_2x, As_20−xTe_80−xIn_2x and Ge_20−xSe_80−xIn_2x is described. In Te-containing glasses the Fermi level is shifted by 0.05 eV and in Se-containing glasses by 0.2 eV towards the valence band.     

Multilayer planar structures prepared from chalcogenide thin films of As–Se and Ge–Se systems and polymer thin films using thermal evaporation and spin-coating techniques

We report the preparation of multilayers based on polyamide–imide polymer and As–Se or Ge–Se chalcogenide thin films. Chalcogenide films of As–Se and Ge–Se systems were deposited using a thermal evaporation method periodically alternating with spin-coated Polyamide–imide films. Fifteen layers of PAI + As–Se system and nineteen layers of PAI + Ge–Se system were coated. Optical properties of prepared multilayers have been established using UV–vis–NIR and Ellipsometric spectroscopy. Both, PAI + As–Se and PAI + Ge–Se multilayer systems, exhibited the high-reflection bands centered around 830 nm and 1350 nm, respectively. The shift of the band position of PAI + Ge–Se multilayers to lower energies was caused by higher thickness of Ge–Se films. The bandwidth of reflection band of 8 PAI + 7 As–Se multilayer was ～90 nm while bandwidth of PAI + Ge–Se system decreased to ～70 nm because Ge–Se films have 0.1 lower refractive index against As–Se films. Design of 1D-photonic crystals based on alternating chalcogenide and polymer films is a new opportunity for application of chalcogenide thin films as optical materials for near-infrared region.     

Self-diffusion in the chalcogenide glass system SeGeAs

Se, As and Ge self-diffusion were investigated in three different glasses of the chalcogenide system SeGeAs by means of the radioactive tracers ⁷⁵Se, ⁷³As and ⁷¹Ge. All D values (Se between 200 and 290°C, As between 240 and 290°C and Ge between 280 and 295°C) lay between 10^?14 and 5 × 10^?16 cm² s^?1. The diffusion profiles were analyzed using a chemical micro-etching technique. Roles of glass structure and possible diffusion mechanism are discussed.     

Structural dependence of ultrafast third-order optical nonlinearity of Ge–Ga–Ag–S chalcogenide glasses

Ultrafast third-order optical nonlinearity of Ge–Ga–Ag–S chalcogenide glasses at the wavelength of 820 nm has been measured using femtosecond time-resolved optical Kerr (OKE) technique. The results show that Ge–Ga–Ag–S glasses have large third-order optical nonlinear susceptibility, χ⁽³⁾ and the response time is also subpicosecond, which are predominantly due to the ultrafast distortion of electron cloud surrounding the balanced positions of Ge, Ga, Ag and S atoms. What’s more, a strong dependence of χ⁽³⁾ on the composition and microstructure of these glasses was found which shows that [GeS₄] and [GaS₄] tetrahedra play an important role on the third-order optical nonlinearity. These Ge–Ga–Ag–S chalcogenide glasses would be expected as promising materials applied on all-optical switching devices.     

Electron spin resonance of Mn2+ IN As–Se and As–Te glasses

The electron spin resonance of Mn has been studied in As_xSe_100?x with 0 ? x ? 70 and As_xTe_100?x with 40 ? x ? 70. All samples, except those with x < 20 in As_xSe_100?x, exhibit six hyperfine lines centered at g = 4.3. A g = 2.0 line is observed in As–Se with largely scattered linewidth by samples, but not in As–Te unless oxygen contamination is included in the samples. The g = 4.3 line in As–Se is closely related to a formation of As₂Se₃-type layer structure and interpreted as being caused by Mn situated at the interlayer position and surrounded by four Se atoms in an arrangement of rhombic symmetry. In As–Te, a similar model by four Te atoms is valid in composition near As₂Te₃, but the surrounding Te is replaced by As as As content increases. The g = 2.0 line is concluded to come from phase-separated antiferromagnetic particles of Mn–O and MnSe. The linewidth is scattere by differences in the relative amounts of the two kinds of particles and in particle size.     

Preparation and properties of chalcogenide glasses in the GeS2–Sb2S3–CdS system

In searching for new kind of photoelectric material, chalcogenide glasses in the GeS₂–Sb₂S₃–CdS system have been studied and their glass-forming region was determined. The system has a relatively large glass-forming region that is mainly situated along the GeS₂–Sb₂S₃ binary side. Thermal, optical and mechanical properties of the glasses were reported and the effects of compositional change on their properties are discussed. These novel chalcogenide glasses have relatively high glass transition temperatures (T_g ranges from 566 to 583 K), good thermal stabilities (the maximum of deference between the onset crystallization temperature, T_c, and T_g is 105 K), broad transmission region (0.57–12 μm) and large densities (d ranges from 2.99 to 3.34 g cm^?3). These glasses would be expected to be used in the field of rare earth doped fiber amplifiers and nonlinear optical devices.     

Thermoelectric power of AsSeTe glasses

The result of the measurement of the thermoelectric power of glasses in the As₂Se₃As₂Te₃ system are reported. The results indicate that towards the As₂Te₃ end of the composition, there is an anomalous increase in thermoelectric power, the origin of which is not clear. Polaron hopping seems to contribute to conductivity in tellurium rich glasses. Structural restrictions on polaron hopping, such as the availability of AsTeAsTe chains seems to be important in discussing transport behaviour.     

Evaluation of basic physical parameters of quaternary Ge–Sb-(S,Te) chalcogenide glasses

New quaternary chalcogenide Ge_xSb_40?xS₅₀Te₁₀ (x = 10, 20 and 27 at.%) and Ge_xSb_40?xS₅₅Te₅ (x = 20 and 27 at.%) glasses have been synthesized and the compositions have been characterized applying prompt gamma-ray activation analyses, neutron diffraction, and material density measurements. Using the experimental data, the basic physical parameters, such as average atomic volume, packing density, compactness, average coordination number, number of constrains, average heat of atomization and cohesive energy, of the synthesized glasses are evaluated and the results are discussed in a function of glass composition.     

Thermal expansion of glasses in the As2Se3–AsI3 system

Thermal expansion coefficients (α) of glasses in the As₂Se₃–AsI₃ system are measured in the glass transition region and temperature dependence of the fictive temperature is calculated on the basis of relaxation model. It is found that the increase of AsI₃ content results in: an increase of α, decrease of the glass transition temperature (T_g), increase of the α change at T_g, an effect of quenching rate on α, and also changes in the structural relaxation times spectrum. The data are discussed within the framework of the assumption that the addition of AsI₃ to As₂Se₃ results in: (1) destruction of the As₂Se₃ glass network, (2) structural inhomogeneity of the glasses increase, (3) the temperature dependence of chemical–structural equilibria occurring in the liquid state increases.     

Optical properties of Ge–Se–Te wedge-shaped films by using only transmission spectra

Amorphous Ge₁₀Se_90?xTe_x (with x = 0, 5, 10 and 15 at.%) thin films were prepared by thermal evaporation method. The optical transmission spectra of these films were measured in the wavelength range of 500–2500 nm in order to drive the refractive index and the absorption coefficient of these films. Applying the analytical expressions proposed by Swanepoel, enabling the calculations of optical constants of thin films with non-uniform thickness with high accuracy. Furthermore, the dispersion of the refractive index is discussed in terms of the single-oscillator Wemple and DiDomenico model. It was found that, the mechanism of the optical absorption follows the rule of the allowed non-direct transition. The optical band gab, E_g, and the oscillator energy, E_o, decrease while the dispersion energy, E_d, increases by increasing Te content. The relationship between the obtained results and the chemical compositions of the Ge₁₀Se_90?xTe_x thin films were discussed in terms of the chemical bond approach, the excess of Se–Se homopolar bonds and the cohesive energy (CE).     

Thermal and optical properties of TeO2–ZnO–BaO glasses

We report the results of a systematic study of the thermal and optical properties of a new family of tellurite glasses, TeO₂–ZnO–BaO (TZBa), as a function of the barium oxide mole fraction and compare them with those of TeO₂–ZnO–Na₂O (TZN). The characteristic temperatures of this new glass family (glass transition, T_g, crystallization, T_x, and melting, T_m) increase significantly with BaO content and the glasses are more thermally stable (greater ΔT = T_x ? T_g) than TZN glasses. Relative to these, Raman gain coefficient of the TZBa glasses also increases by approximately 40% as well as the Raman shift from ~ 680 cm^? 1 to ~ 770 cm^? 1. The latter shift is due to the modification of the glass with the creation of non-bridging oxygen ions in the glass network. Raman spectroscopy allows us to monitor the changes in the glass network resulting from the introduction of BaO.     

Glass formation and properties of chalcogenide systems XVIII. On glass formation in the system GePbSeTe

The glass formation range of the system GePbSeTe has been investigated. For selected series properties such as the mole volume, glass transition temperature and the electrical direct current conductivity are discussed with respect to their dependence on composition. For some series the results can be compared with the properties of glasses containing Sn instead of Pb. The change in the energy gap for the crystalline compounds SnSe, SnTe, PbSe and PbTe is reflected by the data of the Sn or Pb containing glasses.     

Structural characterization and phase transformation kinetics of Se58Ge42−xPbx (x = 9, 12) chalcogenide glasses

The glass transition behavior and crystallization kinetics of Se₅₈Ge_42?xPb_x (x = 9, 12) have been investigated using Differential Scanning Calorimetry (DSC) at five different heating rates under non-isothermal conditions. It has been observed that these glassy systems exhibit single glass transition and double crystallization on heating. The XRD pattern revealed that the considered glasses get crystallized into GeSe₂ and PbSe/Se phases after annealing at 633–643 K for 2 h. The GeSe₂ and Se phases were found to crystallize in monoclinic structure while, PbSe phase crystallizes in cubic structure. Besides this, a mixed phase was also observed in DSC thermograms after annealing. The kinetic studies include determination of various parameters such as Avrami exponent (n), frequency factor (K_o), dimensionality of growth (m), the activation energy for glass transition (E_t) and for crystallization (E_c). The values of E_t increases while that of E_c decreases after annealing. Also, dimensionality of growth decreases to one dimension from two and three dimensions after annealing.     

Spectroscopic properties and ab initio calculations on the structure of erbium–zinc-borate glasses and glass ceramics

Glasses in the (Er₂O₃)_x·(B₂O₃)_(60 ? x)·(ZnO)₄₀ system (0 ≤ x ≤ 15 mol%) have been prepared by the melt quenching technique. X-ray diffraction, FTIR spectroscopy, UV-VIS spectroscopy and ab initio calculations studies have been employed to study the role of Er₂O₃ content on the structure of the investigated glass system.X-ray diffraction and infrared spectra of the glasses reveal that the B–O–B bonds may be broken with the creation of new non-bridging oxygen ions facilitating the formation of Er–O–B linkages. The excess of oxygen can be accommodated in the network by the conversion of sp² planar [BO₃] units to the more stable sp³ [BO₄] tetrahedral structural units. The linkages of the [BO₄] structural units can polymerize in [B₃O₉]^? 9 cyclic trimeric ions which will produce the ErBO₃ crystalline phase. An increase of the efficiency corresponding to the ⁴I_15/2 state to ⁴I_11/2 state (4f–4f) transitions of Er^+ 3 ions was observed for the erbium oxide richest glasses.Ab initio calculations on the structure of the matrix network show the thermodynamic instability of the [BO₄], [ZnO₄] and [Zn₄O] structural units. Formation of three-coordination oxygens was necessary to compensate shortage of oxygens from zinc ions.     

Sensitivity of the photo-darkening effect in CuAsSe glasses

When CuAsSe glasses are irradiated, they exhibit higher concentrations of darkening than AsSe glasses. Since darkening depends on the composition, the darkening centers in CuAsSe glasses to be of the same kind as those in AsSe glasses, i.e. arsenic clusters. Concerning the kinetics of erasing, it was found that the activation energy and the rate constant of erasing in CuAsSe are almost equal to those in AsSe glasses, but for the kinetics of darkening, it was found that the activation energy of darkening is equal to that of AsSe but α₀, which is proportional to the number of latent darkening centers, and the darkening rate constant k₁ are about twice as high as the corresponding constants of AsSe glasses. This may be the reason for the greater darkening in CuAsSe glasses. The high value of α₀ was attributed to the generation of more AsAs bonds on the addition of Cu to the AsSe glass network. The high value of k₁ was attributed to the increase in efficiency of photo-decomposition because of the many impurity levels in the band gap and also because of the narrow optical energy gap in the CuAsSe glasses.     

Further Meyer–Neldel rule in thermally activated crystallization of chalcogenide glasses

This paper reports the observation of the Further Meyer–Neldel rule in thermally activated crystallization in Se_80?xTe₂₀M_x (M = Ag, Cd, In and Sb); 0 ? x ? 15 chalcogenide glasses. We have investigated Further Meyer–Neldel rule by two different approaches. In the first case, the different sets of Meyer–Neldel pre-factor K₀₀ and Meyer–Neldel energy E_MN are obtained by changing the composition (i.e., value of x) of a particular glassy system keeping the third element (i.e., value of M) constant. In the second case, the different sets of Meyer–Neldel pre-factor K₀₀ and Meyer–Neldel rule energy E_MN are obtained by changing the third element in a particular glassy system keeping the composition constant. The results are explained using the conception of thermal phonons in thermally activated crystallization analogous to optical phonons in thermally activated electric conduction.