Growth and characterization of GaN and AlN films on (1 1 1) and (0 0 1) Si substrates

GaN and AlN films were grown on (1 1 1) and (0 0 1) Si substrates by separate admittances of trimethylgallium (or trimethylaluminum) and ammonia (NH₃) at 1000°C. A high temperature (HT) or low temperature (LT) grown AlN thin layer was employed as the buffer layer between HT GaN (or HT AlN) film and Si substrate. Experimental results show that HT AlN and HT GaN films grown on the HT AlN-coated Si substrates exhibit better crystalline quality than those deposited on the LT AlN-coated Si substrates. Transmission electron microscopy (TEM) of the HT GaN/HT AlN buffer layer/(1 1 1)Si samples shows a particular orientation relationship between the (0 0 0 1) planes of GaN film and the (1 1 1) planes of Si substrate. High quality HT GaN films were achieved on (1 1 1) Si substrates using a 200 Å thick HT AlN buffer layer. Room temperature photoluminescence spectra of the high quality HT GaN films show strong near band edge luminescence at 3.41 eV with an emission linewidth of ∼110 meV and weak yellow luminescence.     

N-type doping of GaN/Si(1 1 1) using Al0.2Ga0.8N/ALN composite buffer layer and Al0.2Ga0.8N/GaN superlattice

The characteristics of Si-doped and undoped GaN/Si(1 1 1) heteroepitaxy with composite buffer layer (CBL) and superlattice are compared and discussed. While as-grown Si-doped GaN/Si(1 1 1) heteroepitaxy shows lower quality compared to undoped GaN, crack-free n-type and undoped GaN with the thickness of 1200 nm were obtained by metalorganic chemical vapor deposition (MOCVD). In order to achieve the crack-free GaN on Si(1 1 1), we have introduced the scheme of multiple buffer layers; composite buffer layer of Al_0.2Ga_0.8N/AlN and superlattice of Al_0.2Ga_0.8N/GaN on 2-in. Si(1 1 1) substrate, simultaneously. The FWHM values of the double-crystal X-ray diffractometry (DCXRD) rocking curves were 823 arcsec and 745 arcsec for n-GaN and undoped GaN/Si(1 1 1) heteroepitaxy, respectively. The average dislocation density on GaN surface was measured as 3.85×10⁹ and 1.32×10⁹ cm⁻² for n-GaN and undoped GaN epitaxy by 2-D images of atomic force microscopy (AFM). Point analysis of photoluminescence (PL) spectra was performed for evaluating the optical properties of the GaN epitaxy. We also implemented PL mapping, which showed the distribution of edge emission peaks onto the 2 inch whole Si(1 1 1) wafers. The average FWHMs of the band edge emission peak was 367.1 and 367.0 nm related with 3.377 and 3.378 eV, respectively, using 325 nm He-Cd laser as an excitation source under room temperature.     

Nanostructural and optical features of amorphous AlxSi0.45−xO0.55 (0 ⩽ x ⩽ 0.05) thin films prepared by RF-magnetron sputter techniques

The nanostructural, chemical, and optical features of Al_xSi_0.45−xO_0.55 (0 ⩽ x ⩽ 0.05) thin films were investigated in terms of Al concentration and post-deposition annealing conditions; the films were prepared by co-sputtering a Si main target and Al-chips, and the annealing was carried out at temperatures of 400–1100 °C. The a-Si_0.45O_0.55 films prepared without Al-chips and annealed at 800 °C contain ∼3.5 nm-sized Si nanocrystallites. The photoluminescence (PL) intensity as well as the volume fraction of Si nanocrystallites increased with increasing the concentration of Al to a certain level. In particular, the intensity of the PL spectra of the Al_0.025Si_0.425O_0.550 films which were annealed at 800 °C increased significantly at wavelengths of ∼580 nm. It is highly likely that the observed increase in the PL intensity is caused by the raise in the total volume of the ∼3.5 nm-sized nanocrystallites in the films. The addition of Al as well as the post-deposition annealing allow adjustment and control of the nanostructural and light-emission features of the a-SiO_x films.     

Self-limiting nature in atomic-layer epitaxy of rutile thin films from TiCl4 and H2O on sapphire (0 0 1) substrates

The atomic-layer epitaxy of rutile thin films on sapphire (0 0 1) substrates was studied in the controlled growth of titanium oxide films by sequential surface chemical reactions using sequentially fast pressurized titanium tetrachloride (TiCl₄) and water (H₂O) vapor pulses. Optical constants and thicknesses of these rutile films were investigated in terms of vapor pressure using a variable-angle spectroscopic ellipsometer. As a result, the self-limiting nature in the atomic-layer epitaxy of rutile thin films was demonstrated clearly under various conditions of dosing reactant vapors, where growth rates were almost constant at approximately 0.077 nm/cycle (0.77 nm/min) and refractive indices were also constant at 2.59.     

Correlation between the 2.7 eV and 4.3 eV photoluminescence bands in silica glass

Our previous studies have reported the excitation energy dependence of the 2.7 and 4.3 eV photoluminescence (PL) bands in oxygen deficient silica glass at low temperature (∼20 K). An oxygen vacancy (O₃SiSiO₃) was thought to be the origin of the two PL bands. In order to verify the origin of the 2.7 and 4.3 eV PL bands in silica glass, we measured the PL band of various thermally heat treated silica glasses. In the sample after heat treatment, we did not observe the 4.3 eV PL band, though we did observe the 2.7 eV PL band. These results suggest that these two PL bands do not have a common origin.     

Effects of vicinal angles from (0 0 1) surface on the Boron-doping features of high-quality homoepitaxial diamond films grown by the high-power microwave plasma chemical-vapor-deposition method

Vicinal surface effects on homoepitaxial growth and boron-doping processes have been studied in case of single-crystalline diamond (0 0 1) surfaces grown using the high-power microwave plasma chemical-vapor-deposition (MWPCVD) method. The off-angles inclined from the on-orientation (0 0 1) surfaces ranged to 5° along the [1 1 0] or [1 0 0] direction, while the concentration of doping B(CH₃)₃ gas was kept constant with a B/C ratio of 50 ppm. Although a number of square-like growth hillocks often appeared, depending substantially on the crystalline quality of the high-pressure/high-temperature-synthesized (HPHT) Ib diamond substrates employed, the number and shape of the hillocks changed significantly with the increasing off-angle. For the vicinal surfaces with off-angles of ≈3° inclined along the [1 1 0] direction, macroscopically flat surfaces were obtained, compared with the other off-angle cases examined. Furthermore, the growth rate and acceptor density of substitutional boron atoms in the homoepitaxial layers were found to substantially increase with the increasing off-angle. These indicate that the step density can play important roles not only in the homoepitaxial growth but also in the boron-incorporation process during the high-power MWPCVD growth.     

Alteration of the optical properties of poly 9,9′-dioctylfluorene by TiO2 nanocrystalline

A poly 9,9′-dioctylfluorene (PFO)/TiO₂ composite was successfully prepared by adsorbing the polymer on the surface of a TiO₂ nanocrystalline film. The photoluminescence (PL) spectrum of the obtained nanocomposite film showed 28 nm of red-shift, compared to that of the bulk polymer film. The maximum of the PL emission peaks of the pure bulk polymer occurred at 442 nm, while the maximal emission for the nanocomposite film appeared at 470 nm. The interaction between the conjugated polymer chains and the nanopores of the TiO₂ film played a key role in the resulting red-shift.     

ZnO growth on Si with low-temperature ZnO buffer layers by ECR-assisted MBE

High-quality ZnO films were grown on Si(1 0 0) substrates with low-temperature (LT) ZnO buffer layers by an electron cyclotron resonance (ECR)-assisted molecular-beam epitaxy (MBE). In order to investigate the optimized buffer layer temperature, ZnO buffer layers of about 1.1 μm were grown at different growth temperatures of 350, 450 and 550 °C, followed by identical high-temperature (HT) ZnO films with the thickness of 0.7 μm at 550 °C. A ZnO buffer layer with a growth temperature of 450 °C (450 °C-buffer sample) was found to greatly enhance the crystalline quality of the top ZnO film compared to others. The root mean square (RMS) roughness (3.3 nm) of its surface is the smallest, compared to the 350 °C-buffer sample (6.7 nm), the 550 °C-buffer sample (7.4 nm), and the sample without a buffer layer (6.8 nm). X-ray diffraction (XRD), photoluminescence (PL) and Raman scattering measurements were carried out on these samples at room temperature (RT) in order to characterize the crystalline quality of ZnO films. The preferential c-axis orientations of (0 0 2) ZnO were observed in the XRD spectra. The full-width at half-maximum (FWHM) value of the 450 °C-buffer sample was the narrowest as 0.209°, which indicated that the ZnO film with a buffer layer grown at this temperature was better for the subsequent ZnO growth at elevated temperature of 550 °C. Consistent with these results, the 450 °C-buffer sample exhibits the highest intensity and the smallest FWHM (130 meV) of the ultraviolet (UV) emission at 375 nm in the PL spectrum. The ZnO characteristic peak at 438.6 cm⁻¹ was found in Raman scattering spectra for all films with buffers, which is corresponding to the E₂ mode.     

Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion

AlGaInP/GaInP quantum well intermixing phenomena induced by Zn impurity diffusion at 540 °C were studied using room-temperature photoluminescence (PL) spectroscopy. As the diffusion time increased from 40 to 120 min, PL blue shift taken on the AlGaInP/GaInP quantum well regions increased from 36.3 to 171.6 meV. Moreover, when the diffusion time was equal to or above 60 min, it was observed firstly that a PL red shift occurred with a PL blue shift on the samples. After detailed analysis, it was found that the red-shift PL spectra were measured on the Ga_0.51In_0.49P buffer layer of the samples, and the mechanism of the PL red shift and the PL blue shift were studied qualitatively.     

1.5 μm Emission and infrared-to-visible frequency upconversion in Er+3/Yb+3-doped phosphoniobate glasses

Sodium phosphoniobate glasses with the composition (mol%) 75NaPO₃–25Nb₂O₅ and containing 2 mol% Yb³⁺ and x mol% Er³⁺ (0.01 ⩽ x ⩽ 2) were prepared using the conventional melting/casting process. Er³⁺ emission at 1.5 μm and infrared-to-visible upconversion emission, upon excitation at 976 nm, are evaluated as a function of the Er³⁺ concentration. For the lowest Er³⁺ content, 1.5 μm emission quantum efficiency was 90%. Increasing the Er³⁺ concentration up to 2 mol%, the emission quantum efficiency was observed to decrease to 37% due to concentration quenching. The green and red upconversion emission intensity ratio was studied as a function of Yb³⁺ co-doping and the Er³⁺–Er³⁺ energy transfer processes.     

Synthesis and luminescent properties of novel RENbO4:Ln3+ (RE = Y, Gd, Lu; Ln = Eu, Tb) micro-crystalline phosphors

Using rare earth coordination polymers with aromatic carboxylic acids as the precursors of rare earth oxide components, with polyethylene glycol (PEG) as the dispersing media, micro-crystalline phosphors RENbO₄:Ln³⁺ (RE = Y, Gd, Lu; Ln = Eu, Tb) have been synthesized by an in situ co-precipitation method. Both X-ray diffraction and scanning electron microscopy have shown that the resultant samples present are crystalline with ‘rice glue ball’ micro-morphology and crystalline grain sizes in the range of 1–2 μm. The luminescent properties of these phosphors have been studied, which show that the best photoluminescent performance is achieved for GdNbO₄:Tb³⁺ or Eu³⁺. This was because Gd³⁺ plays an important role to enhance the luminescence of Tb³⁺ or Eu³⁺ in an energy transfer process. In addition, the influence of the doping concentration on the fluorescence behaviors has been examined. With increase of the doping concentration from 1 mol% to 5 mol%, both the red emission intensity of Eu³⁺ and the green emission intensity of Tb³⁺ increase.     

Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors

We report on the epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-?? superlattices (T2SLs) on GaSb substrates by metalorganic chemical vapor deposition. For InAs/GaSb strained T2SLs, interfacial layers were introduced at the superlattice interfaces to compensate the tensile strain and hence to improve the overall material quality of the superlattice structures. The optimal morphology and low strain was achieved via a combined interfacial layer scheme with 1 monolayer (ML) InAsSb+1 ML InGaSb layers. In contrast, the InAs/InAsSb strain-balanced T2SLs allow for a relatively easy strain management and simple precursor flow switching scheme while maintaining device-quality materials. Surface root mean square roughness of 0.108 nm and a nearly zero net strain were obtained, with effective bandgaps of 147 and 94 meV determined for two sets of InAs/InAsSb strain-balanced T2SLs.     

Beryllium doping and silicon amphotericity in (1 1 0) GaAs-based heterostructures: structural and optical properties

The use of beryllium as an acceptor at high doping levels in (1 1 0)GaAs-based heterostructures is found to be deleterious to the structural and optical properties of these epi-layers. This may limit the use of beryllium as a p-type dopant on the (1 1 0) surface. Because silicon is amphoteric on the (1 1 0), it can be used as an alternative p-type dopant, in addition to its traditional role as an n-type dopant. Transmission electron microscopy, optical absorption, and luminescence data indicate that high quality multiple quantum well structures with p-type GaAs buffer layers doped with silicon, rather than beryllium, can be grown.     

Efficient plasmonic coupling between Er3 +:(Ag/Au) in tellurite glasses

We report a systematic study of the localized surface plasmon resonance effects on the photoluminescence of Er^3 +-doped tellurite glasses containing Silver or Gold nanoparticles. The Silver and Gold nanoparticles are obtained by means of reduction of Ag ions (Ag⁺ → Ag⁰) or Au ions (Au^3 + → Au⁰) during the melting process followed by the formation of nanoparticles by heat treatment of the glasses. Absorption and photoluminescence spectra reveal particular features of the interaction between the metallic nanoparticles and Er^3 + ions. The photoluminescence enhancement observed is due to dipole coupling of Silver nanoparticles with the ⁴I_13/2 → ⁴I_15/2 Er^3 + transition and Gold nanoparticles with the ²H_11/2 → ⁴I_13/2 (805 nm) and ⁴S_3/2 → ⁴I_13/2 (840 nm) Er^3 + transitions. Such process is achieved via an efficient coupling yielding an energy transfer from the nanoparticles to the Er^3 + ions, which is confirmed from the theoretical spectra calculated through the decay rate.     

Enhancement of photoluminescence in SiCxNy nanoparticle films by addition of a Ni buffer layer

This work reports the effect of the presence of a Ni buffer layer on the photoluminescence (PL) of SiC_xN_y nanoparticle films prepared by RF plasma magnetron sputtering process in a reactive N₂ + Ar + H₂ gas mixture. An introduction of a Ni buffer of 80 nm or thicker remarkably improves the PL of the films. Annealing in a temperature range of 400–1100 °C is found to significantly affect the PL intensity. Optimal PL is achievable at 600 °C. X-ray photoelectron and Fourier-transform infrared spectroscopy suggest that the strong PL is directly related to the composition of the SiC_xN_y nanoparticle and the concentration of Si–O, and Si–N bonds. The results are relevant to the development of wide bandgap optoelectronic devices.     

Structural study of undoped and (Mn, In)-doped SnO2 thin films grown by RF sputtering

Undoped and 5%(Mn, In)-doped SnO₂ thin films were deposited on Si(1 0 0) and Al₂O₃ (R-cut) by RF magnetron sputtering at different deposition power, sputtering gas mixture and substrate temperature. X-ray reflectivity was used to determine the films thickness (10–130 nm) and roughness (～1 nm). The combination of X-ray diffraction and Mössbauer techniques evidenced the presence of Sn⁴⁺ in an amorphous environment, for as-grown films obtained at low power and temperature, and the formation of crystalline SnO₂ for annealed films. As the deposition power, substrate temperature or O₂ proportion are increased, SnO₂ nanocrystals are formed. Epitaxial SnO₂ films are obtained on Al₂O₃ at 550 °C. The amorphous films are quite uniform but a more columnar growth is detected for increasing deposition power. No secondary phases or segregation of dopants were detected.     

On the optical absorption and photoluminescence of Er-doped Ge–S–Ga glasses

We have studied the absorption and photoluminescence (PL) of (GeS₂)₈₀(Ga₂S₃)₂₀ glasses doped with 0.17, 0.35 and 1.05 at.% Er. The sharp bands centered at around 660, 810, 980 and 1540 nm in the absorption spectra can be associated with intra 4f-shell transitions in Er³⁺ ions from ⁴I_15/2 level to ⁴F_9/2, ⁴I_9/2, ⁴I_11/2 and ⁴I_13/2 levels, respectively. It has been observed that the absorption edge shifts towards lower energies with increasing Er concentration. A decrease in the absorption coefficient in the range of weak absorption, as well as the host luminescence in more heavily doped samples has been established, which may be associated with less native defects in the glassy structure. The role of excitation wavelength (λ_ex) on the PL emission band at 1540 nm using different Er³⁺-doping level has been evaluated. It has been found that the total PL band remains almost the same under direct excitation of Er³⁺ ions (at λ_ex = 644, 770 and 982 nm), while it becomes narrower under the host excitation (at λ_ex = 532 nm).     

Structure and optical properties of light-emitting Si films fabricated by neutral cluster deposition and subsequent high-temperature annealing

As a new development of our previous study on the production of light-emitting amorphous Si (a-Si) films by the neutral cluster deposition (NCD) method, we have fabricated light-emitting Si films with improved emission intensity by the combined methods of NCD and subsequent high-temperature annealing. The structure of these films is best characterized by Si nanocrystals, surrounded by an interfacial a-SiO_x (x < 2) layer, embedded in an a-SiO₂ film. These improved Si films were observed by atomic force microscopy and high-resolution transmission electron microscopy, and analyzed by means of X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence (PL) and Fourier transform infrared-attenuated total reflection measurements. The PL curves of the annealed samples exhibit peaks around 600 nm, at almost the same position as the unannealed samples. Their PL intensities, however, have increased to approximately five times those of the unannealed samples. The source of the luminescence is most likely due to electron-hole recombination in the a-SiO₂/Si interfacial a-SiO_x layer.     

White light emission from Eu3 +/Tb3 +/Tm3 + triply-doped aluminoborate glass excited by UV light

The Eu^3 +/Tb^3 +/Tm^3 + triply-doped glasses with the composition of CaO―Al₂O₃―B₂O₃―RE₂O₃ (RE = Eu,Tb,Tm) have been synthesized by melt quenching method. The photoluminescence of these Eu^3 +/Tb^3 +/Tm^3 + triply-doped glasses (CaAlB:RE^3 +) were studied and the emission spectra combining with blue, green and reddish orange bands were observed. Under 360 nm wavelength excitation the white light emission is achieved when the concentration (x) of Tm^3 + in Ca_0.931 ?xAlB:Eu^3 +_0.038,Tb^3 +_0.031,Tm^3 +_x glass is in the range of 0.0013-0.011 per mol matrix. In addition, the energy transfer (ET) between Tb^3 + and Eu^3 + ions in Eu^3 +/Tb^3 +/Tm^3 + triply-doped glasses was validated and the electric dipole–dipole interaction is responsible for the ET process of Tb^3 + → Eu^3 + at low concentrations. Hence, the Eu^3 +/Tb^3 +/Tm^3 + triply-doped aluminoborate glass could be a potential candidate for white LEDs.     

Highly enhanced f–f transitions of Eu3+ in La2O3 phosphor via citric acid and poly (ethylene glycol) precursor route

The luminescent material europium-activated La₂O₃ have been prepared by the citric acid and poly (ethylene glycol) (PEG) precursor route. Their structures and optical properties were characterized by FT-IR spectrum, X-ray diffraction (XRD), thermogravimetry-differential thermal analysis (TG-DTA), UV–vis spectroscopy, and photoluminescence (PL) spectra, respectively. The results show considerable enhancement of the photoluminescence, especially the Eu³⁺ f–f transition excitation lines and the charge transfer band (CT). The samples can exhibit strong red emission centered at 626 nm excited at either the CT band (300 nm) or the Eu³⁺ f–f transition (396 nm), suggesting the potential application as the red phosphors for ultraviolet light-emitting diodes (LEDs), which can be attributed to the ⁵D₀→⁷F₂ transition of Eu³⁺. The remarkable enhancement of color purity of red emission and the concentration quenching of Eu³⁺ in La₂O₃ were also observed with increasing Eu³⁺ doped concentration.