Formation of fluorescent aggregates in Rhodamine 6G doped silica glasses

The photoluminescence properties of type I sol–gel synthesized Rhodamine 6G doped silica samples were investigated in the 1.5 × 10⁻⁴–1.5 × 10⁻³ mol/l range of concentration by means of steady-state and time resolved photoluminescence measurements. The emission peak red shifts as the concentration increases. For a fixed concentration, the peak position also red shifts as the excitation wavelength decreases. The observed spectroscopic features, including excitation of photoluminescence and decay time, indicate the formation of fluorescent dimers.     

Influence of Ag nanoparticles on luminescent performance of SiO2:Tb3 + nanomaterials

Tb^3 + single-doped SiO₂ (SiO₂:Tb^3 +) and Tb^3 +, Ag co-doped SiO₂ (SiO₂:Tb^3 +–Ag) nanostructured luminescent materials were prepared by a modified Stöber method. Their microstructure and optical property were investigated using scanning electron microscopy, ultraviolet visible absorption and photoluminescence spectrophotometry. Results show that the samples are composed of well-dispersed near-spherical particles with a diameter about 50 nm, the highest fluorescence intensity is obtained when the doping concentration of Tb^3 + is 4.86 mol%, the corresponding internal quantum efficiency is 13.6% and the external quantum efficiency is 8.2%. The experimental results indicate that Ag nanoparticles can greatly enhance the light absorption at 226 nm and the light emission at 543 nm of SiO₂:Tb^3 +–Ag, and the fluorescence lifetime reduces with increasing Ag concentration in SiO₂:Tb^3 +–Ag. Additionally, the present results indicate that fluorescence enhancement is attributed to the local field enhancement and the increased radiative decay rates induced by Ag nanoparticles.     

Silica nano-rings and nano-hollows: Preparation and UV photoluminescence emission

By annealing fused silica coated with ultra-thin Ag film, silica nano-rings and nano-hollows were prepared on the substrate. The Ag nano-particles attached on the wall of nano-hollows or embedded in silica were confirmed with energy dispersive spectroscopy and transmission electron microscopy. Besides the well-known characteristic stretching bands of silica, three novel stretching bands around 1579, 1320 and 270 cm^?1 were found in the annealed Ag-coated silica by Raman scattering spectroscopy, which have been attributed to the O₂ in ground state, O–O and metal–oxygen stretching bands, respectively. The formation mechanism of nano-rings and nano-hollows has been discussed based on the experimental results. An ultraviolet photoluminescence emission of 360–370 nm from annealed Ag-coated silica was found when the excitations were 230 nm and 280 nm or longer. The possible photoluminescence emission mechanism has been discussed, which suggests that oxygen excess defects are responsible for the photoluminescence emission, and photoexcitation occurs in the silica as well as in Ag⁺ ions.     

Er3+-doped germanate glasses for active waveguides prepared by Ag+/K+ ↔ Na+ ion-exchange

Planar waveguides were prepared by Ag⁺/K⁺ ? Na⁺ ion-exchange on Er⁺³-doped GeO₂–ZnO–Na₂O–Li₂O glasses obtained by a melting–casting method. Optical parameters of the waveguides were measured at 543.5, 632.8, and 1550 nm by m-line technique as a function of the Ag⁺ ion-exchange time. The optimized planar waveguides show an effective diffusion depth (d) of 2.95 μm and well confined propagating TE₀ and TM₀ modes at 1550 nm. Spectroscopic properties as photoluminescence emission and emission decay time were evaluated for the erbium-doped planar waveguide, indicating that Ag⁺ ? Na⁺ ion-exchange enhance the photoluminescence emissions in the green and infrared regions from erbium ions. The glass system studied is promising to be applied as optical amplifiers in the C-telecom band. Green emission sensitized by Ag⁺ was also observed.     

Photoluminescence characterization of aged and regenerated mesoporous silica

The investigation of the photoluminescence features of aged and regenerated mesoporous silica is reported. The emission spectrum of aged samples displays a blue band peaked at about 450 nm at room temperature with excitation channels at 250 and 200 nm. No UV emission band is detected. The regenerated samples recover the optical transparency of the samples, the vibrational properties in the 3000–3800 cm^? 1 but for the isolated silanols band and the UV-blue emission features. Indeed beside the blue band peaked around 450 nm a UV band centred at 340 nm is reported whose relative contribution depends on the excitation wavelength. The aging and regeneration processes are discussed in view of the attribution of the observed emission features to specific surface defects.     

Comparative study on photoluminescence of amorphous and nano-crystalline YAG:Tb phosphors prepared by a combustion method

Amorphous and nano-crystalline Y₃Al₅O₁₂:Tb phosphor samples were obtained via a facile combustion method by calcination at various temperatures, using yttrium oxide and aluminum nitrite as starting materials and citric acid as fuel. XRD, FT-IR and TEM results showed that the products were amorphous if prepared at 750 °C, well-crystalline when treated above 850 °C. In addition, partially crystalline YAG phase was observed at 800 °C (in air). The excitation spectra of the samples calcined at 750 °C and 800 °C exhibited some difference in the 230–255 nm range in comparison to those of nano-crystalline YAG:Tb, i.e. an extra band centered at 250 nm was detected via Gaussian curve-fitting. Furthermore, the photoluminescence intensity of as-synthesized samples decreased obviously with increasing the crystallinity under 250 nm excitation. Contrary, it increased monotonously when altering the excitation wavelength to 323 nm. The concentration-dependent emission spectra of samples calcined at 800 °C revealed that the strongest intensity could be obtained with 10% Tb doping. Red-shifts indicated changes of the inter-atomic distances within the Tb³⁺ coordination polyhedron with increasing Tb concentration. The low temperature photoluminescence of partially crystalline YAG:10% Tb was also investigated, displaying good-resolution but reduced intensity compared to the room-temperature photoluminescence.     

Fabrication and ionic conductivity of amorphous Li–Al–Ti–P–O thin film

Li⁺ ion conducting Li–Al–Ti–P–O thin films were fabricated on ITO-glass substrates at various temperatures from 25 to 400 °C by RF magnetron sputtering method. When the substrate temperature is higher than 300 °C, severe destruction of ITO films were confirmed by XRD (X-ray diffraction) and the abrupt transformation of one semi-circle into two semi-circles on the impedance spectra. These as-deposited Li–Al–Ti–P–O solid state electrolyte thin films have an amorphous structure confirmed by XRD and a single semicircle on the impedance spectra. Good transmission higher than 80% in the visible light range of these electrolyte thin films can fulfill the demand of electro-chromic devices. Field emission scanning electron microscopy and atomic force microscopy showed the denser, smoother and more uniform film structure with the enhanced substrate temperature. Measurements of impedance spectra indicate that the gradual increased conductivity of these Li–Al–Ti–P–O thin films with the elevation of substrate temperature from room temperature to 300 °C is originated from the increase of the pre-exponential factor (σ₀). The largest Li-ion conductivity can come to 2.46 × 10^? 5 S cm^? 1. This inorganic solid lithium ion conductor film will have a potential application as an electrolyte layer in the field such as lithium batteries or all-solid-state EC devices.     

Optical properties of Ge-oxygen deficient centers embedded in silica films

The emission features of Ge-oxygen deficient centers in a 100 nm thick Ge-doped silica films were investigated by looking at the photoluminescence spectra and time decay under synchrotron radiation excitation in the 10–300 K temperature range. These centers exhibit two luminescence bands centered at 4.3 eV and 3.2 eV associated with the de-excitation from singlet (S₁) and triplet (T₁) states, respectively, that are linked by an intersystem crossing process. The comparison with results obtained in a bulk Ge-doped silica sample shows that the efficiency of the intersystem crossing process depends on the properties of the matrix embedding the Ge-oxygen deficient centers, being more effective in the film than in the bulk counterpart.     

Enhanced 2 μm emission of Yb–Ho doped fluorophosphates glass

In this paper, 2 μm emission spectra of Yb–Ho doped fluorophosphate glass are investigated and compared with Yb–Tm–Ho doped fluorophosphate glass. The 2 μm emission intensity of Yb–Ho doped fluorophosphate glass is much stronger than that of Yb–Tm–Ho doped fluorophosphate glass, exhibiting that Yb–Ho doping is an appropriate doping system to 2 μm application. As the doping concentration of Yb³⁺ ions in Yb–Ho doped fluorophosphate glass increases, the 2 μm emission intensity increases monotonously and possesses a maximum for 10% Yb ions concentration. Therefore, 10% is the optimization of Yb ions doping concentration for 2 μm emission. Otherwise, the up-conversion emission of Ho³⁺ ions is also studied. Combining with the energy transfer processes, the mechanism is discussed.     

Luminescence of Dy3+-doped GexGa5Se(95−x) glasses

Dysprosium doped Ge_xGa₅Se_(95?x) (x = 15–30) chalcogenide glasses were synthesized in this present work. The Vis–NIR transmission spectra, photoluminescence spectra and lifetime were measured. Glasses (x = 27.5, 29.17 and 30) doped with 0.2 wt% dysprosium ions shows relatively strong emission bands at 1146 and 1343 nm when pumped at 808 nm. The emission lifetime ranged from 440 to 540 μs. The oscillator strengths and intensity parameters Ω_t (t = 2, 4 and 6) were calculated using Judd–Ofelt theory.     

Preparation of AlRu intermetallic compounds by mechanical alloying

The formation of Al₆Ru intermetallic compounds using high-energy ball milling was investigated. High-purity Al and Ru crystalline powders, in the relative (molar) ratio of 6:1, were milled for periods up to 30 h. Samples of the milled materials were annealed at different times and temperatures. The microstructures of the annealed samples were compared to those of the as-milled samples. It was found that the obtained alloys have compositions that are in accord with the Al–Ru phase diagram. However, the X-ray analysis of a 10 h milled sample, annealed at 873 K for 30 min, showed evidence of the formation of a quasicrystalline icosahedral alloy mixed with the crystalline Al₆Ru. Scanning electron microscopy showed that the microstructures are similar to those obtained by other sample preparation techniques.     

Photoluminescence of Si or Ge nanocrystallites embedded in silicon oxide

This paper presents the results of photoluminescence, its temperature dependence and Raman scattering investigations on magnetron co-sputtered silicon oxide films with (or without) embedded Si (or Ge) nanocrystallites. It is shown the oxide related defect origin of the visible PL centers peaked at 1.7, 2.06 and 2.30 eV. The infrared PL band centered at 1.44–1.58 eV in Si–SiO_x, system has been analyzed within a quantum confinement PL model. Comparative PL investigation of Ge–SiO_x system has confirmed that high energy visible PL bands (1.60–1.70 and 2.30 eV) are connected with oxide related defects in SiO_x. The PL band in the spectral range of 0.75–0.85 eV in Ge–SiO_x system is attributed to exciton recombination inside of Ge NCs.     

2 μm spectroscopic investigation of Tm3+-doped tellurite glass fiber

TmF₃ doped TeO₂–ZnO–La₂O₃ (TZL) glasses and fibers have been prepared by the conventional melt-quenching and suction casting methods, respectively. 2 μm emission properties and energy transfer mechanisms of the TZL glasses and fibers have been analyzed and discussed. The oscillator strength, Judd–Ofelt parameters, radiative transition probability and radiative lifetime of Tm³⁺ have been calculated based on the absorption spectra and Judd–Ofelt theory. The maximum emission cross-section of Tm³⁺ is 6.9 × 10^?21 cm² near 2 μm. Emission spectra have been obtained from both TZL fibers and bulk glass when excited with a 794 nm pump. The results of 2 μm emission spectra indicate that the line width of Tm³⁺ measured in fibers is narrower than that in the bulk glass sample. The peak position of the emission spectra shifts to longer wavelength with increment of the fiber length.     

Erbium activated HfO2 based glass–ceramics waveguides for photonics

(100 − x)SiO₂ − xHfO₂ (x = 10, 20, 30 mol) glass–ceramics planar waveguides activated by 0.3 mol% Er³⁺ ions were prepared by sol–gel route, using dip-coating deposition on v-SiO₂ substrates. High resolution transmission electron microscopy has shown that after an adapted heat treatment, the resulting materials show nanocrystalline structures. The glass–ceramics waveguides were characterized by m-line, Raman, losses measurements, and photoluminescence spectroscopy. Photoluminescence spectroscopy has demonstrated the embedding of erbium ions in the nanocrystals. The results are discussed with the aim of assessing the role of hafnia on the structural, optical and spectroscopic properties of erbium doped silica hafnia glass–ceramics planar waveguides.     

Optical properties of zinc barium silicate glasses

A serial of glasses samples with the higher ZnO concentration from 30 mol% to 45 mol% were prepared and their optical absorption and photoluminescence properties were investigated. It is shown that the composition of glass strongly affects the position of the absorption edge and emission band where a fairly big red-shift was observed with increasing of ZnO concentration. It is most likely attributed to the reduced quantum confinement effect due to increased aggregation degree of ZnO in the glass matrix. The introduction of F^? into zinc barium silicate glasses leads to a notable red-shift of the absorption spectra, as well as the enhanced UV emission and distinctive visible emissions.     

Synthesis and characterization of nanocrystalline Fe60X20B10P10 (X = Co,Ni) alloys

In this work, two nanocrystalline alloys, Fe₆₀Ni₂₀P₁₀B₁₀ and Fe₆₀Co₂₀P₁₀B₁₀, were produced by mechanical alloying processing them at milling times of 5, 40 and 100 h. Structural properties were determined by X-ray diffraction and transmission Mössbauer spectroscopy. The 100-h milled alloys consisted primarily of metastable bcc Fe(Co, Ni) nanocrystals (11–17 nm) with different Fe-rich environments. Differential scanning calorimetry measurements were performed in order to study the thermal stability of the nanocrystalline phases and their crystalline growth. The values for the apparent activation energy of the main crystallization processes were 2.1 ± 0.1 and 2.4 ± 0.1 eV, respectively, which were associated with grain growth mechanisms.     

Luminescence and defects of Yb3+-doped sol–gel silica glasses

The optical properties of Yb-doped sol–gel silica glasses were studied by optical absorption and radio-luminescence (RL) measurements, that revealed the typical absorption and emission pattern of Yb³⁺ ions. Moreover, RL bands in the 1.5–3.5 eV interval were also observed, and related to defects of the silica matrix. The RL intensity temperature dependence, investigated in the 10–320 K interval, evidenced the presence of the SiO₂ self-trapped exciton emission at 2.2 eV, whose intensity was rapidly quenched by temperature increasing. At variance, the Yb³⁺ emission intensity increased markedly by temperature increasing. This phenomenon is interpreted by considering a competitive role of point defects in free carrier trapping, evidenced by parallel wavelength resolved thermally stimulated luminescence measurements.     

Synthesis,characterization and photoluminescence of ZnO spindles by polyvinylpyrrolidone-assisted low-temperature wet-chemistry process

ZnO spindles were prepared by wet-chemistry process with surfactant polyvinylpyrrolidone at a low temperature of 35 °C. The morphologies and structures of the products were characterized by X-ray powder diffraction, field emission scanning electron microscopy, and high-resolution transmission electron microscopy. The addition of polyvinylpyrrolidone promoted the formation of ZnO crystal nuclei, and accelerated the growth rate of (0001) plane rich in Zn²⁺ ions. The as-obtained ZnO spindles were twin crystal wurtzite structures, with the size of 30 nm at the tips, 350–450 nm at the center, and 1–1.5 μm in length. The room-temperature photoluminescence results showed that surface effects played a major role in the luminescence of the ZnO spindles, which exhibited a broad violet–blue–green emission band related to deep level defects. We proposed a new growth mechanism, which might be useful for applications in synthesis of size- and shape-controlled ZnO crystals.     

Efficient 1.53 μm erbium light emission in heavily Er-doped titania-modified aluminium tellurite glasses

Ti–Al co-doped erbium tellurite glasses have been obtained by melting mixed Er₂O₃, TiO₂ and TeO₂ batches in Al₂O₃ crucibles. By crucible dissolution Al₂O₃ amounts from 11.5 to 18.6 mol% were introduced in the synthesized glasses. Differential thermal analysis of glasses points to a strong dependence of glass transition temperature T_g with the substitution extent of TeO₂ by the doping oxides. No crystallization features are observed up to 450 °C. The spectral features and decay kinetics of the infrared photoluminescence of erbium demonstrate the possibility to achieve more than 50% of quantum yield of light-emission at Er³⁺ concentrations as large as 10²¹ cm⁻³, with about 2 ms of lifetime, 8 × 10⁻²¹ cm² of stimulated emission cross section, and no saturation at pump power densities higher than 10 kW cm⁻². The study of the kinetics of Er–Er energy transfer suggests to ascribe these features to a particularly homogeneous dispersion of Er³⁺ ions in the modified tellurite network. Raman scattering measurements of the spectral distribution of vibrational modes evidence that the introduction of doping oxides leads to an increase of structural disorder without crystallization effects.     

Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE

Non-polar a-plane GaN films were grown on an r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The effect of growth temperature on structural, morphological and optical properties has been studied. The growth of non-polar a-plane (1 1 ?2 0) orientation of the GaN epilayers were confirmed by high resolution X-ray diffraction (HRXRD) study. The X-ray rocking curve (XRC) full width at half maximum of the (1 1 ?2 0) reflection shows in-plane anisotropic behavior and found to decrease with increase in growth temperature. The atomic force micrograph (AFM) shows island-like growth for the film grown at a lower temperature. Surface roughness has been decreased with increase in growth temperature. Room temperature photoluminescence shows near band edge emission at 3.434–3.442 eV. The film grown at 800 °C shows emission at 2.2 eV, which is attributed to yellow luminescence along with near band edge emission.