调制掺杂(Al,Ga)As-GaAs异质结二维电子气场效应晶体管(TEGFET)

调制掺杂(Al,Ga)As-GaAs异质结二维电子气场效应晶体管(TEGFET)是一种基于(Al,Ga)As-GaAs的界面处存在着高载流子迁移率二线电子气的原理制成的一种新型场效应器件.科学家们预言这种器件将在微波领域及超高速超大规模集成电路中得到重要应用.本文简述了它的工作机理、基本结构、耗尽型及增强型模式、工艺制造、目前达到的性能与通常的GaAs FET的比较、初步的器件物理分析和伏安特性计算.着重指出分子束外延生长工艺是这种器件的关键工艺.     

人工智能(AI)在电力系统中的应用

简要地介绍了人工智能技术的基本概念,并指出其在电力系统中的应用范围。对专家系统、人工神经网络、模糊理论、遗传算法等人工智能技术的基本概念进行了简单的介绍,并从实用化的观点对他们在电力系统故障诊断中的应用特点、存在问题进行分析,最后指出综合运用多种人工智能技术是电力系统中的人工智能技术应用的最新发展动向,并提出了有针对性的建议。     

氢钝化对Hg1—xCdxTe红外透射谱的影响

采用红外透射测量观测了氢钝化对Ｈｇ１－ｘＣｄｘＴｅ晶片的影响，用分层模型计算了晶片射率，分析了氢钝化增加其透射率，吸收边向短波方向移动，低于禁带宽度能量的吸收降低，透过范围减小的原因。表明氢钝化不仅影响到表面，而且影响到整个体内。原因是经氢钝化处理后杂质或缺陷受到有效钝化，载流子浓度降低，组分Ｘ增加；荷电杂质或缺陷的局域内场影响发失变化；以及荷电杂质或缺陷散射增强。     

Analysis of MBE grown AI(x)Ga(1-x)As-GaAs heteroepitaxial layers by rutherford backscattering

The Rutherford Backscattering (RBS) technique has been optimized for the measurement of thin (>85Å) alternating layers of A1(x)Ga(l-x)As and GaAs, which are at the limit of resolution of standard RBS measurements. RBS analysis of these structures provides both layer thicknesses and Al content. This information is useful for device processing since the layer thicknesses impact the FET threshold voltage and the Al content is important for proper selective chemical etching. Experimental conditions for the beam energy, detection angle, and sample rotation have been determined which allow measurement of the layer thicknesses to a precision of ±20-30Å (for layers >85A) and of the Al content,x, to a precision of ±.02. Comparison of the RBS data with Transmission Electron Microscopy (TEM), Cathodoluminescence (CL), and Reflection High Energy Electron Diffraction (RHEED) measurements on the same material showed very good agreement between the different techniques. The advantage of RBS is that it can measure much thinner layers than CL and it provides thickness and composition information at the same time whereas TEM only provides thickness for this particular material. RBS is currently used tocharacterize a monitor wafer from each day’s run to provide a processing baseline for the MBE growth.     

Growth of GaN on Si(1 l 1) by Inserting 5AI/AIN Buffer Layer

GaN films with and without a Al/AIN buffer layers are grown on Si(111) substrate via metalorganic chemical vapor deposition (MOCVD),respectively.The films are characterized by optical microscopy( OM),X-ray diffraction rocking curve (XRDRC),and Raman scattering(RS). OM shows that the GaN film inserting with 8Al/AlN buffer layers has less cracks than film without any δAl/AIN buffer layers.XRDRC demonstrates good quality of the GaN film with δAl/AIN buffer layers and Raman scattering analyses reveal that it is an effective way to overcome the difficulties of growing GaN on Si(111)sub. strate by inserting δAl/AIN buffer layers.     

探索基于AI技术的互联网智能运维新模式

随着4G+技术的应用,5G时代的到来,电信运营商面临着被管道化和业务边缘化的风险。同时,跨界竞争不断加剧,传统通信业务市场趋于饱和,随着5G技术的部署与发展,世界正从“人人互联”向“万物互联”迈进,物联网和VR等互联网应用场景多样化,运维复杂程度越来越高。传统运维方式成本高、协作困难、效率低下,难以满足业务发展需求。近年来大数据和AI新技术的兴起,为加速运营商数字化创新提供了新的契机。运营商应紧抓机遇,积极探索AI网络运维应用场景,逐步推进人工智能与网络运维深度融合。     

Exploring the Determinants of Artificial Intelligence (AI) Literacy: Digital Divide,Computational Thinking,Cognitive Absorption

To effectively utilize artificial intelligence (AI)-based technologies such as ChatGPT and realize their novel ethical issues, individuals must have a variety of knowledge and skills about AI. Such knowledge and skills have led to the emergence of AI literacy. Despite the importance of AI literacy in everyday life, little is known about its determinants. To better understand the determinants of AI literacy, we attempted to build a research model relying on previous research and different theoretical frameworks. The model incorporated digital divide, cognitive absorption, and computational thinking. As a major finding from the current study, computational thinking was found to be a significant determinant of AI literacy, which facilitate using, recognizing, and evaluating AI-based technologies. Moreover, we found out that individuals with physical access to information and communication technologies (ICTs) are more expected to use and recognize AI. Also, motivation and skills in using ICTs enable individuals to better evaluate the outcomes of AI-based technologies. The findings also showed that convenient access to ICTs contributes to a deep involvement with AI-based technologies in the use. Further, individuals with higher motivation and skills to use AI technologies are likely to have a pleasant experience after using these technologies.     

Regulation - A licence to do (almost) anything you want WILLIAM WEBB DESCRIBES A MORE FLEXIBLE APPROACH TO SPECTRUM LICENSING

This article talks about the challenges faced and solutions adopted in searching for the optimal flexible radio license to transmit the radio signals. The key reason for managing spectrum is to avoid interference between different users. License terms for spectrum are largely unchanged since early in the last century. Spectrum usage rights (SURs) is a new and more flexible approach that could play an important role in the future of licensing     

钛合金表面激光熔覆（Ti＋Al/Ni）/（Cr2O3＋CeO2）复合涂层组织写耐磨性能

为改进钛合金(Ti6A14V)的耐磨性能,应用脉冲Nd:YAG激光器进行了钛合金表面熔覆(Ti Al/Ni) (Cr_2O_3 CeO_2)复合涂层实验,分析了熔覆层微观组织,测试了熔覆层显微硬度及其在大气环境室温下的摩擦磨损性能。结果表明,熔覆层组织是在细小树枝晶和共晶基体上散布着未熔Cr_2O_3颗粒和白亮球状液析Cr_2O_3,及生成的硬化TiAl陶瓷颗粒增强相。显微硬度明显提高,最高可达1150HV,平均是基材的3～4倍。熔覆层和基材实现良好冶金结合,白亮熔合区宽度为10～20μm。激光熔覆层干滑动摩损的摩擦系数在0．2～0．3之间,磨损率比Ti6A14V标样降低约4～5倍。     

Theoretical studies of poly(para-phenylene vinylene) (PPV) and poly(para-phenylene) (PPP)

The electroluminescence from PPV and the blue light emission from PPP constitute exciting subjects of study. The band gap of these semiconducting polymers can be engineered in a wide range from red to ultraviolet by structural changes made on them. In the present work, we present a theoretical approach based on semiempirical and ab initio total energy and force calculations of PPV and PPP. We perform a conformational analysis in order to investigate the connection between their structural, optical and electronic properties. We use the large cell approach, in connection with the semiempirical quantum method Extended Hückel (BICON-CEDiT code) and the density functional theory (DFT) within the full-potential linearized augmented-plane-wave method (FPLAPW) as implemented in the computational code WIEN2k. Our results are compared to other calculations and to optical absorption measurements.     

(Sr_(0.5)Ba_(0.5))_(1.9)Ca_(0.1)NaNb_(5–x)TaxO_(15)陶瓷的介电性能

通过Ta掺杂改性钨青铜陶瓷(Sr0.5Ba0.5)1.9Ca0.1NaNb5–xTaxO15(x=0～0.30),分析了Ta掺杂量对其烧结性能、微观结构及介电性能的影响。陶瓷的烧结温度随x的增大略有提高。当x<0.10时,陶瓷的tC和弛豫性变化不大;当x≥0.10时,tm(1kHz)明显降低,从270℃(x=0)降低至231℃(x=0.30)。且tm随频率增加向高温移动,弛豫性明显增强。认为Ta掺杂引起其性能变化是由于Ta—O键与Nb—O键键能的差异,导致陶瓷氧八面体中心离子位移量以及A位离子有序程度的变化所致。     

纳米复合(Nd,Pr)FeTiBC永磁合金的结构与磁性能

采用熔体快淬法制备了纳米复合(Nd1-xPrx)9.4Fe75.6Ti4B10.5C0.5(x为0,0.2,0.4,0.6,0.8和1.0)合金薄带,研究了Pr对合金薄带结构与磁性能的影响规律。结果表明:Pr降低了合金薄带的晶化温度,使合金薄带晶粒变得粗大,不利于合金矫顽力的提高。Pr对合金薄带磁性能的影响不大,不同Nd和Pr比例的合金薄带在最佳热处理条件下,剩磁Br在0.86 T与0.90 T之间,内禀矫顽力Hcj在1 000 kA/m左右,最大磁能积(BH)max介于130 kJ/m3与136 kJ/m3之间。     

Miniband spectra of (AlAs)M(GaAs)N(111) superlattices

Semiconductors - Electron states in the conduction band of (111)-oriented (AlAs)M(GaAs)N superlattices (SLs) with M≥N and N&;lt;10 are considered. The properties of such SLs are mainly...     

单层超晶格Ga_(0.47)In_(0.53)As/InP(110)及半导体合金Ga_(0.235)In_(0.765)P_(0.5)As_(0.5)的状态密度及介电常数(英文)

The DOS, JDOS and ε2(Ω) of monolayer superlattice Ga0.47ln0.53As/ InP(110) have been calculated by a tight-binding approach and compared with that of alloy Ga0.235ln0.765P0.5As0.5 which has the same stoi-chiometric composition as the monolayer superlattice. By using the techniques of the group theory we have obtained the expressions of momentum matrix elements between valence band states and conduction band states with four adjustable parameters. These parameters are determined by fitting the calculated values of ε2(Ω) with the experimental values for InP, GaAs and InAs. Our results show that the superlattice periodicity makes its DOS, JDOS and ε2(Ω) different from those of alloy in varying degree. Due to the folding of Brillouin zone, the JDOS of superlattice turns round in comparison with that of alloy. The momentum matrix elements have different effects for the superlattices and alloys.For the alloys, they can only change the amplitudes of peaks but not the positions of peaks; however, for the superlattices both amplitude and position can be changed.     

Electron-phonon interaction in short-period (GaAs) m (AlAs) n (001) superlattices

The deformation potentials of electron scattering at short-wavelength phonons for intervalley transitions in the conduction band of short-period (GaAs) _m (AlAs) _n (001) (m, n = 1, 2, 3) superlattices are determined by the electron density functional method. The dependences of the electron and phonon states and deformation potentials on the layer thickness in the superlattices are analyzed. The results of ab initio calculations are in good agreement with the data of empirical calculation of the deformation potentials integrated over phonons, but differ from data on the corresponding potentials for partial scattering channels because of approximations of the phenomenological model of interatomic binding.     

Sr0.3Ba0.7Bi3.7La0.3Ti4O15铁电陶瓷的烧结及介电性能

采用两步烧结工艺制备Sr0.3Ba0.7Bi3.7La0.3Ti4O15铁电陶瓷,研究了烧结工艺对陶瓷的晶相和介电性能的影响。结果表明:适当提高最高温度、保温温度和保温时间可改善陶瓷的介电性能。当最高温度为1180～1200℃,在1050～1080℃保温5～15h时,其εr为238～262,tanδ小于10–2,σ为1.0×10–11～10–12S·m–1。该烧结工艺可减少铋的挥发,降低氧空位浓度,因而减弱了陶瓷的高温低频耗散现象。随着保温时间的增加,高温电导得到有效抑制,在1050℃保温15h样品的σ降低了一个数量级,在280℃时为5.2×10–9S·m–1。     

全球信息基础设施总体概念问题(上)

本文讨论了电信技术、网络形态和发展电信技术的指导思想,目的是从技术机理和工程应用方面说明GII网络形态的总体概念.