Analysis of the absorption and emission spectra of poly(p-phenylene vinylene) films thermally converted at a relatively low temperature

In this work, we studied the absorption and emission spectra of spin-coated poly(p-phenylene vinylene) (PPV)–dodecylbenzenesulfonic counter-ion (DBS) films. The PPV–DBS films were obtained from a soluble precursor polymer thermally converted to PPV over a comparatively short time interval (30 min), and at low temperature (110 °C), conditions that yielded films with few structural defects. The line shape of the absorption spectra of the films deposited on glass substrates was analyzed by assuming a Gaussian distribution of segments along the main chain of PPV, and a conjugation degree between 3 and 15 units. For emission studies, only PPV segments with a high conjugation degree or a lower energy gap (HOMO–LUMO transition) contributed to the feature of the spectra.     

Effects of thermal conversion on the metal/polymer interface of layer-by-layer PPV/DBS films

In this paper, the thermal conversion effects on the metal/polymer interface of poly(p-phenylene vinylene) (PPV) films were investigated. The substrates studied were: aluminum, indium–tin oxide, gold and glass (BK7). Layer-by-layer PPV films were processed from poly(xylylidene tetrahydrothiophenium chloride) and dodecylbenzenesulfonate with 5 and 20 layers. The thermal conversion treatment was performed at 110 °C and 230 °C. The films were investigated through emission spectra. Selectively, the emission occurred in large PPV segments and it showed a significant dependence on the film/metal interface. It was clear that this synthesis process reduced the metal degradation in the interface. The Huang–Rhys factor was estimated to demonstrate this effect.     

Plasma enhanced chemical vapor deposition of ZnO thin films

Zinc oxide thin films were deposited on silicon and corning-7059 glass substrates by plasma enhanced chemical vapor deposition at different substrate temperatures ranging from 36 to 400 °C and with different gas flow rates. Diethylzinc as the source precursor, H₂O as oxidizer and argon as carrier gas were used for the preparation of ZnO films. Structural and optical properties of these films were investigated using X-ray diffraction, reflection high energy electron diffraction, atomic force microscopy and photoluminescence. Highly oriented films with (0 0 2) preferred planes were obtained on silicon kept at 300 °C with 50 ml/min flow rate of diethylzinc without any post annealing. Reflection high energy electron diffraction pattern also showed the crystalline nature of these films. A textured surface with rms roughness ∼28 nm was observed by atomic force microscopy for the films deposited at 300 °C. A sharp peak at 380 nm in the PL spectra indicated the UV band-edge emission.     

Correlation between the method of preparation and the properties of the sol–gel HfO2 thin films

This work describes the preparation of HfO₂ thin films by the sol–gel method, starting with different precursors such as hafnium ethoxide, hafnium 2,4-pentadionate and hafnium chloride. From the solution prepared as mentioned above, thin films on silicon wafer substrates have been realized by ‘dip-coating’ with a pulling out speed of 5 cm min^?1. The films densification was achieved by thermal treatment for 10 min at 100 °C and 30 min at 450 °C or 600 °C, with a heating rate of 1 °C min^?1. The structural and optical properties of the films are determined employing spectroellipsometric (SE) measurements in the visible range (0.4–0.7 μm), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The main objective of this paper was to establish a correlation between the method of preparation (precursor, annealing temperature) and the properties of the obtained films. The samples prepared from pentadionate and ethoxide precursors are homogenous and uniform in thickness. The samples prepared starting from chloride precursor are thicker and proved to be less uniform in thickness. Higher non-uniformity develops in multi-deposition films or in crystallized films. A nano-porosity is present in the quasi-amorphous films as well in the crystallized one. For the samples deposited on silicon wafer, the thermal treatment induced the formation of a SiO₂ layer at the coating–substrate interface.     

Alteration of the optical properties of poly 9,9′-dioctylfluorene by TiO2 nanocrystalline

A poly 9,9′-dioctylfluorene (PFO)/TiO₂ composite was successfully prepared by adsorbing the polymer on the surface of a TiO₂ nanocrystalline film. The photoluminescence (PL) spectrum of the obtained nanocomposite film showed 28 nm of red-shift, compared to that of the bulk polymer film. The maximum of the PL emission peaks of the pure bulk polymer occurred at 442 nm, while the maximal emission for the nanocomposite film appeared at 470 nm. The interaction between the conjugated polymer chains and the nanopores of the TiO₂ film played a key role in the resulting red-shift.     

Characterization of europium doped lanthanum oxide films prepared by spray pyrolysis

In this work the characterization of europium doped lanthanum oxide films prepared by ultrasonic spray pyrolysis is reported. The films were prepared from lanthanum and europium nitrates over a corning glass substrate. The films structure was analyzed by X-ray diffraction, Microscopy Electronic and energy dispersive spectroscopy analysis. Photoluminescence and Raman scattering were performed. The excitation spectrum consists of the charge transfer peak at 280 nm and several lines in the 350–450 nm range corresponding to f–f transitions. The emission spectrum, excited at 280 nm, shows five peaks at 580, 595, 615, 652 and 698 nm, corresponding to the transitions of trivalent europium ion. The optical properties of films were compared with the one obtained from powders prepared by precipitation and heating of the precursor material.     

Surface morphology of spin-coated As–S–Se chalcogenide thin films

Surface morphology and roughness of amorphous spin-coated As–S–Se chalcogenide thin films were determined using atomic force microscopy. Prepared films were coated from butylamine solutions with thicknesses d ∼ 100 nm and then annealed in a vacuum furnace at 45 °C and 90 °C for 1 h for their stabilization. The root mean square surface roughness analysis of surfaces of as-deposited spin-coated As–S–Se films indicated a very smooth film surface (with R_q values 0.42–0.45 ± 0.2 nm depending on composition). The nanoscale images of as-deposited films confirmed that surface of the films is created by domains with dimensions 20–40 nm, which corresponds to diameters of clusters found in solutions. The domain character of film surfaces gradually disappeared with increasing annealing temperature while the solvent was removed from the films. Middle-infrared transmission spectra recorded a decrease of intensities of vibration bands connected to N–H (at 3367 and 3292 cm⁻¹) and C–H (at 2965, 2935 and 2880 cm⁻¹) stretching vibrations. Temperature regions of solvent evaporation T = 60–90 °C and glass transformation temperatures T_g = 135–150 °C of spin-coated As–S–Se thin films were determined using a modulated differential scanning calorimetry.     

Luminescence of Dy3+-doped GexGa5Se(95−x) glasses

Dysprosium doped Ge_xGa₅Se_(95?x) (x = 15–30) chalcogenide glasses were synthesized in this present work. The Vis–NIR transmission spectra, photoluminescence spectra and lifetime were measured. Glasses (x = 27.5, 29.17 and 30) doped with 0.2 wt% dysprosium ions shows relatively strong emission bands at 1146 and 1343 nm when pumped at 808 nm. The emission lifetime ranged from 440 to 540 μs. The oscillator strengths and intensity parameters Ω_t (t = 2, 4 and 6) were calculated using Judd–Ofelt theory.     

Preparation and spectral properties of Nd3 +-doped transparent glass ceramic containing Ca5(PO4)3F nanocrystals

A Nd^3 +-doped transparent oxyfluoride glass ceramic containing Ca₅(PO₄)₃F nanocrystals was prepared by thermal treatment at the crystallization temperature for the precursor glass. The transmittances of the precursor glass and the glass ceramic with a thickness of about 2 mm are up to 84.7% and 77.4% in the visible range. The volume fraction of Ca₅(PO₄)₃F nanocrystals in the glass ceramic is about 19% and the ingress fraction of Nd^3 + ions into the Ca₅(PO₄)₃F nanocrystals is about 32%. The peak absorption cross-section increases to 224% at 807 nm and the full width at half maximum for the 807 nm band decreases from 17.5 to 3.5 nm after the crystallization process. The peak stimulated emission cross-section increases from 1.89 × 10^? 20 to 2.42 × 10^? 20 cm² at 1062 nm and the effective width of the emission line for the 1062 nm band decreases from 34 to 29 nm after the crystallization process. The improvement of spectroscopic properties indicates that the glass ceramic is potentially applicable as the 1.06 μm laser material.     

Structural evolution of SnO2 nanostructure from core–shell faceted pyramids to nanorods and its gas-sensing properties

Tin oxide (SnO₂) nanorods were synthesized through an aqueous hexamethylenetetramine (HMTA) assisted synthesis route and their structural evolution from core–shell type faceted pyramidal assembly was investigated. Structural analysis revealed that the as-synthesized faceted SnO₂ structures were made of randomly arranged nanocrystals with diameter of 2–5 nm. The shell thickness (0–80 nm) was dependent on the molar concentration of HMTA (1–10 mM) in aqueous solution. It was revealed that the self-assembly was possible only with tin (II) chloride solution as precursor and not with tin (IV) chloride solution. At longer synthesis hours, the pyramidal nanostructures were gradually disintegrated into single crystalline nanorods with diameter of about 5–10 nm and length of about 100–200 nm. The SnO₂ nanorods showed high sensitivity towards acetone, but they were relatively less sensitive to methane, butane, sulfur dioxide, carbon monoxide and carbon dioxide. Possible mechanisms for the growth and sensing properties of the nanostructures were discussed.     

Broad UHF ferromagnetic resonance of iron rich-aluminum pulsed laser deposited thin films

The magnetic susceptibility of Fe–Al off-normal pulsed laser deposited thin films was measured at ultra high frequencies, UHF. Different Fe_1?x–Al_x films from pure Fe to x = 0.2 Al were prepared. The films were ≈40 nm thick and non-crystalline peaks were detected by the X-ray diffractometry studies. The magnetization of the films remained between 2.0 and 1.8 T for composition less than or equal to 20% Al. A magnetic anisotropy, from H_k ≈ 18 Oe for pure Fe to H_k ≈ 130 Oe for 20% Al was measured. These samples exhibited a well-defined ferromagnetic resonance at frequencies between ≈2.0 GHz and 3.8 GHz depending on composition. The broad resonance peaks had a width, at half maximum, w_h, in the interval from 2.5 GHz to 4.0 GHz depending on Al content. After fitting the magnetic hysteresis loops using a simple distribution of anisotropy values, we used the Landau–Lifshitz–Gilbert equation to fit the UHF magnetic susceptibility. From this last fit we obtained a high damping coefficient value (≈4 times higher than that corresponding to Co or CoFe films), explaining this broad ferromagnetic resonance of these Fe_1?x–Al_x films.     

Sol–gel derived highly transparent and conducting yttrium doped ZnO films

This paper reports the structural, electrical and optical properties of Yttrium doped zinc oxide (YZO) thin films deposited on Corning (7059) glass substrates by spin coating technique. A precursor solution of ZnO, 0.2 M in concentration was prepared from zinc acetate dissolved in anhydrous ethanol with diethanolamine as a sol gel stabilizer. Yttrium nitrate hexahydrate (Y₂NO₃ · 6H₂O) was used as the dopant (3 wt%) in the present study. The films of different thickness in the range (200–500 nm) were prepared. The films were annealed in air at 450 °C for 1 h. It was observed that the c-axis orientation improves and the grain size increases as is indicated by an increase in intensity of the (0 0 2) peak and the decrease in the FWHM with the increase of film thickness. The resistivity decreased sharply from 2.8 × 10⁻² to 5.8 × 10⁻³ Ω-cm as the thickness increased from 200 to 500 nm. However, the average transmittance decreased from 87% to 82.6% as the film thickness increased to 500 nm. The lowest sheet resistance of ∼120 Ω/□ was obtained for the 500 nm thick film.     

Nanostructural and optical features of amorphous AlxSi0.45−xO0.55 (0 ⩽ x ⩽ 0.05) thin films prepared by RF-magnetron sputter techniques

The nanostructural, chemical, and optical features of Al_xSi_0.45−xO_0.55 (0 ⩽ x ⩽ 0.05) thin films were investigated in terms of Al concentration and post-deposition annealing conditions; the films were prepared by co-sputtering a Si main target and Al-chips, and the annealing was carried out at temperatures of 400–1100 °C. The a-Si_0.45O_0.55 films prepared without Al-chips and annealed at 800 °C contain ∼3.5 nm-sized Si nanocrystallites. The photoluminescence (PL) intensity as well as the volume fraction of Si nanocrystallites increased with increasing the concentration of Al to a certain level. In particular, the intensity of the PL spectra of the Al_0.025Si_0.425O_0.550 films which were annealed at 800 °C increased significantly at wavelengths of ∼580 nm. It is highly likely that the observed increase in the PL intensity is caused by the raise in the total volume of the ∼3.5 nm-sized nanocrystallites in the films. The addition of Al as well as the post-deposition annealing allow adjustment and control of the nanostructural and light-emission features of the a-SiO_x films.     

Visible up-conversion photoluminescence from IR diode-pumped SiO2–TiO2 nano-composite films heavily doped with Er3+–Yb3+ and Nd3+–Yb3+

Efficient infrared-to-visible conversion is reported in thin film nano-composites, with composition 90% SiO₂–10% TiO₂, fabricated by a spin-coating sol–gel route and co-doped with Er³⁺ Yb³⁺ and with Nd³⁺:Yb³⁺ ions. The conversion process is observed under 808 nm laser diode excitation and results in the generation of green (526 and 550 nm) and red (650 nm) emissions: from the former, and blue (478 nm) and green (513 and 580 nm) emissions from the latter. The main mechanism that allows for up-conversion is ascribed to energy transfer among Er³⁺ and Yb³⁺ ions in their excited states. Up-conversion efficiency for red emission predominates in samples doped with Er³⁺:Yb³. The results illustrate the large potential of this class of materials for photonic applications in optoelectronics devices.     

Photocarrier diffusion lengths of high-growth-rate microcrystalline silicon

We report on photocarrier transport of high-growth-rate microcrystalline Si (μc-Si) in conjunction with the lateral size, σ_L, of crystallites’ conglomerate (grain) determined from the atomic force microscope (AFM) topographic images on the basis of fractal concepts. μc-Si films were prepared using very-high-frequency plasma-enhanced chemical vapor deposition at a high deposition rate of 6.8 ± 0.5 nm/s. μc-Si thicknesses, d, were varied from 0.53 μm to 5.6 μm. With an increase in d, σ_L increased from 70 nm to 590 nm. At the same time, the ambipolar diffusion lengths, L_amb, of photocarriers, observed using the steady-state photocarrier grating (SSPG) technique, increased from 50 nm to 420 nm. Log–log plots of L_amb versus d and σ_L versus d were both expressed as a power law with an exponent of 0.9, yielding a simple linear relation between L_amb and σ_L. Moreover, their ratio, L_amb/σ_L, was below unity, implying the intra-grain carrier diffusion. From these results, the role of the grain (column) boundaries for photocarrier diffusion in μc-Si is discussed.     

Structure and optical properties of light-emitting Si films fabricated by neutral cluster deposition and subsequent high-temperature annealing

As a new development of our previous study on the production of light-emitting amorphous Si (a-Si) films by the neutral cluster deposition (NCD) method, we have fabricated light-emitting Si films with improved emission intensity by the combined methods of NCD and subsequent high-temperature annealing. The structure of these films is best characterized by Si nanocrystals, surrounded by an interfacial a-SiO_x (x < 2) layer, embedded in an a-SiO₂ film. These improved Si films were observed by atomic force microscopy and high-resolution transmission electron microscopy, and analyzed by means of X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence (PL) and Fourier transform infrared-attenuated total reflection measurements. The PL curves of the annealed samples exhibit peaks around 600 nm, at almost the same position as the unannealed samples. Their PL intensities, however, have increased to approximately five times those of the unannealed samples. The source of the luminescence is most likely due to electron-hole recombination in the a-SiO₂/Si interfacial a-SiO_x layer.     

Broadband near-infrared emission from Bi–Er–Tm Co-doped germanate glasses

Bi–Er–Tm co-doped germanate glasses and Bi, Er, Tm singly doped glasses were prepared and characterized through absorption spectra, NIR emission spectra and decay lifetime. A super broadband near-infrared emission from 1000 nm to 1600 nm, covering the whole O, E, S, C, and L bands, was observed in the Bi–Er–Tm co-doped samples due to the result of the overlapping of the Bi related emission band (centered at 1300 nm), the emission from Er^{3+ 4}I_13/2 → ⁴I_15/2 transition (centered at 1534 nm) as well as the emission from Tm^{3+ 3}H₄ → ³F₄ transition (centered at 1440 nm), which is essential for broadly tunable laser sources and broadband optical amplifiers. The energy transfer process was also discussed at the end of the paper.     

Multilayer planar structures prepared from chalcogenide thin films of As–Se and Ge–Se systems and polymer thin films using thermal evaporation and spin-coating techniques

We report the preparation of multilayers based on polyamide–imide polymer and As–Se or Ge–Se chalcogenide thin films. Chalcogenide films of As–Se and Ge–Se systems were deposited using a thermal evaporation method periodically alternating with spin-coated Polyamide–imide films. Fifteen layers of PAI + As–Se system and nineteen layers of PAI + Ge–Se system were coated. Optical properties of prepared multilayers have been established using UV–vis–NIR and Ellipsometric spectroscopy. Both, PAI + As–Se and PAI + Ge–Se multilayer systems, exhibited the high-reflection bands centered around 830 nm and 1350 nm, respectively. The shift of the band position of PAI + Ge–Se multilayers to lower energies was caused by higher thickness of Ge–Se films. The bandwidth of reflection band of 8 PAI + 7 As–Se multilayer was ～90 nm while bandwidth of PAI + Ge–Se system decreased to ～70 nm because Ge–Se films have 0.1 lower refractive index against As–Se films. Design of 1D-photonic crystals based on alternating chalcogenide and polymer films is a new opportunity for application of chalcogenide thin films as optical materials for near-infrared region.     

Effect of tellurium deposition rate on the properties of Cu–In–Te based thin films and solar cells

To investigate the effects of tellurium (Te) deposition rate on the properties of Cu–In–Te based thin films (Cu/In=0.30–0.31), the films were grown on both bare and Mo-coated soda-lime glass substrates at 200 °C by co-evaporation using a molecular beam epitaxy system. The microstructural properties were examined by means of scanning electron microscopy and X-ray diffraction. The crystalline quality of the films was improved with increase in the deposition rate of Te, and exhibited a single CuIn₃Te₅ phase with a highly preferred (1 1 2) orientation. Te-deficient film (Te/(Cu+In)=1.07) grown with a low Te deposition rate showed a narrow bandgap of 0.99 eV at room temperature. The solar cell performance was affected by the deposition rate of Te. The best solar cell fabricated using CuIn₃Te₅ thin films grown with the highest deposition rate of Te (2.6 nm/s) yielded a total area (0.50 cm²) efficiency of 4.4% (V_oc=309 mV, J_sc=28.0 mA/cm², and FF=0.509) without light soaking.     

Luminescence properties and energy transfer of Eu/Tb ions codoped aluminoborosilicate glasses

Eu/Tb codoped aluminoborosilicate glasses were fabricated by high temperature melting-quenched technique and their luminescence properties were investigated by excitation and emission spectra. Under 376 nm excitation, blue, green and red emission bands were simultaneously observed at 425 nm, 485 nm, 540 nm and 611 nm, respectively. The broad blue emission band centered at 425 nm was originated from the reduced Eu²⁺ ions, which were reduced from Eu³⁺ ions at high temperature in an ambient atmosphere and the reduction process may be related with the optical basicity of glass matrix. A complex bright white light emission was obtained for 0.5 mol% Eu₂O₃, 0.5 mol% Tb₂O₃ codoped aluminoborosilicate glass with CIE-X = 0.31 and CIE-Y = 0.33. The energy transfer among Eu³⁺, Eu²⁺ and Tb³⁺ ions was also discussed.