Polarized infrared spectra of highly oriented polyacetylenes

The polarization properties of the infrared bands of pure and halogendoped polyacetylene have been studied using highly oriented samples. In particular, the parallel polarization of the doping induced absorptions at low dopant levels is clearly detected from the spectra. At higher doping levels irreversible defects whose bands exhibit different polarization properties have also been identified.The vibrational assignment of pure trans and cis isomers is discussed on the basis of the present polarization data.     

Raman polarization studies of highly oriented organic thin films

In this work we report on the capability of polarized Raman spectroscopy to investigate the structure of thin organic films. Diindenoperylene (DIP) thin films on (1 × 1)‐rutile(110) were prepared via organic molecular beam deposition (OMBD). Raman spectra of DIP thin films showed several strong Raman modes in the wavenumber region from 1200 to 1650 cm⁻¹. The A_g mode at 1284 cm⁻¹ shows two contributions, thereby indicating the coexistence of at least two DIP film structures. Polarized Raman spectroscopy was applied to characterize the molecular orientation and the dominance of the σ‐configuration (i.e. upright standing DIP molecules) was found. Copyright © 2009 John Wiley & Sons, Ltd.     

Polarized absorption spectra of diphenylnitroxide

A polarization study of the low-lying electronic states of the diphenylnitroxide radical imbedded in a benzophenone single crystal is presented. Assignments are made for the first two electronic excited states: ${}^2\text{B}{}_2\text{(n → π}{}^1\text{)}$ at 569 nm and ${}^2\text{B}{}_1\text{(π → π}{}^1\text{)}$ at 431 nm. Vibronic coupling is invoked in inducing the $\text{n → π}{}^1$ transition. The electronic structure of the nitroxide bears some resemblance to the corresponding carbonyl. The delocalization of the π electrons is also discussed.     

Pulsed electron beam deposition of highly oriented thin films of polytetrafluoroethylene

Thin films of polytetrafluoroethylene (PTFE) were deposited by pulsed electron deposition (PED) technique. The transmission electron microscopy (TEM) image of the RT fabricated (20 Å thick) film on carbon coated copper grid shows crystalline nature. Infrared spectra show one to one correspondence between PED ablated film and the PTFE bulk target. The asymmetrical and symmetrical -CF₂- stretching modes were observed at 1220 and 1156 cm⁻¹, respectively. The -CF₂- wagging and bending modes occur at 644 and 512 cm⁻¹, respectively. X-ray diffraction patterns of the film deposited at room temperature (RT) show oriented film along (1 0 0) plane of hexagonal structure and the crystalline nature is retained up to 300 °C on vacuum annealing. The room temperature fabricated film shows smooth and pin hole free surface whereas post-annealing brings discontinuity, roughness and pin holes.     

Preparation and characterization of highly oriented,photoconducting WS2 thin films

A novel combination of methods is shown to produce semiconducting WS₂ thin films with properties close to those of a single crystal. The first step requires the deposition of a very thin Ni layer on a quartz substrate. On top of it an amorphous, sulphur rich, (WS_{3 +x} ) thin film is deposited by reactive rf sputtering. The final annealing step in an argon atmosphere yields 200 nm thick WS₂ films. X-ray diffraction shows that the films crystallize in the 2H-WS₂ phase and are perfectly oriented with the (002) basal planes parallel to the substrate. Residual W₁₈O₄₉ needles and-NiS grains are detected by transmission electron microscopy. The dc conductivity and its activation energy have values typical of bulk crystals. The optical absorption spectrum measured at Room Temperature (RT) shows excitonic peaks at the same energies as in a single crystal. RT photoconductivity measured as a function of wavelength is shown to result from interband transitions.     

Measurements of absorption spectra of thin films by the waveguide technique

The waveguide technique for measuring the absorption spectra of thin films in spectral range of their transparency is considered. The error of measuring the absorption of a ～0.1 μm thick film does not exceed 5% at an absorption coefficient of less than 50 cm^–1. Capabilities and limitations of the method are discussed.     

偶氮聚合物薄膜的吸收谱和二次谐波产生的温度特性

研究了一种偶氮聚合物薄膜的光谱和二阶非线性光学特性.研究结果表明,聚合体中的偶氮发色团以反式异构体形式存在.加热可使分子之间的相互作用减弱,聚集体的聚集程度降低;温度低于70℃时聚集体的结构不会发生变化,分子间相互作用的改变能够完全恢复;高于70℃降温后聚集体聚集程度的降低不能完全恢复.在一定温度下极化可使发色团偶极子定向有序排列,形成J-聚集体.偶氮聚合物薄膜的二阶非线性光学特性起源于偶极子模型,极化温度是影响极化膜二次谐波强度的重要因素之一,该偶氮聚合物薄膜的最佳极化温度约为90℃.     

Resonance Raman spectra of highly oriented trans polyacetylene

Resonant Raman spectra of highly oriented trans polyacetylene have been obtained for different scattering configurations at various exciting wavelengths. The polarization properties of the Raman active phonons have been determined for the first time. The changes in the Raman bandshapes observed upon changing the scattering configuration seem to imply that the dispersion of the Raman bands originates from a distribution of conjugation lengths.     

VUV absorption in thin MgO films

Amorphous films of MgO prepared by laser evaporation of bulk crystals show anomalous absorption in the region between 5.2 and 9.2 eV. An additional broad absorption band attributable to absorption by O^2? ions in states of low coordination has been observed at 217.5nm (5.7 eV). Amorphous MgO films show no evidence of absorption due to the bulk O^2? exciton at 7.62 eV but do exhibit such a feature when annealed to 800C in air.     

Oxygen stoichiometry controlled sharp insulator-metal transition in highly oriented VO2/TiO2 thin films

The insulator-metal transition (IMT) in vanadium dioxide (VO₂) which occurs above room temperature (67 °C) is highly sensitive to atomic defects caused by oxygen stoichiometry. The strained growth and the degree of oxygen deficiency in VO₂ epitaxial films result in lowering of transition temperature below room temperature as well as the broadening of transition parameters such as transition width and hysteresis width, which limit its application potential. Here we demonstrate the growth of highly oriented strain-relaxed VO₂ thin films on (001)-oriented TiO₂ substrates at various oxygen partial pressures, exhibiting the narrow transition and hysteresis width. The cross-sectional transmission electron microscopy and x-ray diffraction analyses of the films reveal the highly oriented growth of insulating monoclinic VO₂. The IMT parameters associated with temperature-dependent phase transition vary with the oxygen partial pressure used during the deposition. The presence of multiple and mixed valence states of vanadium in the films was confirmed by Raman and XPS analyses. We have achieved a narrow transition width (2.3 °C) and hysteresis width (1.2 °C) through controlling the oxygen stoichiometry during the growth of VO₂/TiO₂ films.     

Vibrational spectra of thin eulytine films

This is a study of IR reflection spectra of systems of a thin Bi₄X₃O₁₂(X=Si, Ge) film and a substrate of fused quartz v-SiO₂ in the range 400–1600 cm⁻¹ at T=295 K. Bands assigned to Bi₄X₃O₁₂ are interpreted. It is found that single-photon processes are exhibited in the range 400–800 cm⁻¹, while biphonon processes, in the range 800–1600 cm⁻¹. I. Franko State University of Lvov, 50 Dragomanov St., 290005, Lvov, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 4, pp. 494–498, July–August, 1997.     

Properties of highly oriented spray-deposited fluorine-doped tin oxide thin films on glass substrates of different thickness

Transparent conducting thin films of fluorine-doped tin oxide (FTO) have been deposited onto the preheated glass substrates of different thickness by spray pyrolysis process using SnCl₄·5H₂O and NH₄F precursors. Substrate thickness is varied from 1 to 6 mm. The films are grown using mixed solvent with propane-2-ol as organic solvent and distilled water at optimized substrate temperature of 475 °C. Films of thickness up to 1525 nm are grown by a fine spray of the source solution using compressed air as a carrier gas. The films have been characterized by the techniques such as X-ray diffraction, optical absorption, van der Pauw technique, and Hall effect. The as-deposited films are preferentially oriented along the (2 0 0) plane and are of polycrystalline SnO₂ with a tetragonal crystal structure having the texture coefficient of 6.19 for the films deposited on 4 mm thick substrate. The lattice parameter values remain unchanged with the substrate thickness. The grain size varies between 38 and 48 nm. The films exhibit moderate optical transmission up to 70% at 550 nm. The figure of merit (φ) varies from 1.36×10⁻⁴ to 1.93×10⁻³ Ω⁻¹. The films are heavily doped, therefore degenerate and exhibit n-type electrical conductivity. The lowest sheet resistance (R_s) of 7.5 Ω is obtained for a typical sample deposited on 4 mm thick substrate. The resistivity (ρ) and carrier concentration (n_D) vary over 8.38×10⁻⁴ to 2.95×10⁻³ Ω cm and 4.03×10²⁰ to 2.69×10²¹ cm⁻³, respectively.     

Effects of Mn doping on BaTiO3 thin films grown on highly oriented pyrolytic graphite substrates

We report multiferroelectric properties of Mn-doped BaTiO₃ (MBTO) thin films on highly oriented pyrolytic graphite (HOPG) substrates. The MBTO thin films were grown on the HOPG substrate by pulse laser deposition. For comparison purpose, undoped BaTiO₃ (BTO) thin films were also prepared under same experimental conditions. The BTO and MBTO thin films were polycrystalline, indicating that the MBTO thin film has better crystallinity than the BTO thin film. The leakage current of the MBTO thin film was reduced due to the Mn doping substitution. In addition, the MBTO thin film exhibited better than the BTO thin film in ferroelectric and magnetic behaviors. We suggest that the Mn doping bring about the improvements of ferroelectric and ferromagnetic properties of the BTO thin films. Based on atomic force microscopy (AFM) and conducting AFM (CAFM) studies, the grain size of MBTO thin film was much larger than that of BTO thin film.     

LB薄膜中四新戊氧基酞菁锌和四壬基酞菁铜分子聚集体的吸收光谱的温度特性

本文制备了四新戊氧基酞菁锌(Tetra-neopentoxy phthalocyanine zine)(TNPPeZn)和四壬基酞菁铜(Tetra-nonyl phthalocyanine copper)(TNPeCu)两种酞菁衍生物的Langmuir-Blodgett(LB)薄膜.通过测量10～473K温度下的吸收光谱,研究了两种薄膜的分子聚集状态.TNPPeZn的LB薄膜中,存在着分子单体和分子二聚体,在吸收光谱中分别表现为680nm和620nm的吸收峰.随着温度的升高,分子单体逐渐转变为分子二聚体,这个过程是不可逆的.TNPeCu的LB薄膜中,除了分子单体和分子二聚体以外,还有吸收为740nm的分子J聚集体存在.随着温度的变化,J聚集体发生可逆变化.     

Low-frequency Raman spectra of paradichlorobenzene thin films

The low-frequency Raman spectra of paradichlorobenzene nanofilms with a thickness of about 30 μm, 1 μm, and 400 nm are experimentally measured. With decreasing film thickness, the spectral lines shift to lower frequencies and broaden and some additional lines appear, the intensity of which increases with decreasing film thickness. The film structure is modeled using the method of molecular dynamics, and the histograms of lattice vibration spectra are calculated by the Dean method. It is found that a decrease in the film thickness leads to an increase in the lattice parameters and to a higher orientational disorder both inside the film and, especially, at the film surface. The film structure is similar to the structure of the α-paradichlorobenzene single crystal. To correctly interpret the spectra of lattice vibrations, it is necessary to take into account surface vibrations and existence of vacancies in the structure.     

Transmission spectra of bismuth trioxide thin films

Transmission spectra of bismuth trioxide thin films, of tetragonal and ortorhombic structures, are studied. Experimental data on the wavelength dependence of the refractive index are presented. The dispersion of the refractive index follows a single-oscillator model. Optical energy gap of tetragonal phase is smaller than that of orthorhombic phase; at 300 K these are 2.6 eV and 2.85 eV and at 77K are 2.8 and 3.1 eV, respectively.