Amorphous tungsten-doped In2O3 transparent conductive films deposited at room temperature from metallic target

Amorphous tungsten-doped In₂O₃ (IWO) films were deposited from a metallic target by dc magnetron sputtering at room temperature. Both oxygen partial pressure and sputtering power have significant effects on the electrical and optical properties of the films. The as-deposited IWO films with the optimum resistivity of 5.8 × 10^?4 Ω·cm and the average optical transmittance of 92.3% from 400 to 700 nm were obtained at a W content of 1 wt%. The average transmittance in the near infrared region (700–2500 nm) is 84.6–92.8% for amorphous IWO prepared under varied oxygen partial pressure. The mobility of the IWO films reaches its highest value of 30.3 cm² V^?1 s^?1 with the carrier concentration of 1.6 × 10²⁰ cm^?3, confirming their potential application as transparent conductive oxide films in various flexible devices.     

InOx semiconductor films deposited on glass substrates for transparent electronics

Transparent undoped semiconductor indium oxide films were deposited by radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) of indium at low substrate temperature. It was experimentally verified that the variation of rf power density has a strong influence on the electrical and structural properties of the films. The thickness of the InO_x films is of about 100 nm. Results show that InO_x films show an average visible transmittance of about 85% and energy gap of about 2.6 eV. Structural and electrical conductivity measurements show that films are polycrystalline and there exists a linear variation of conductivity logarithm vs reciprocal of temperature. Electrical conductivity variation of 17.6 to 5.8 × 10⁻³ (Ω cm)⁻¹ for films produced at rf power densities ranging from 3.9 to 78.1 mW cm⁻³ was obtained. This controllable semiconductor behavior can therefore satisfy the requirement of a particular application for these type of films.     

Fabrication and characterization of transparent conductive ZnO:Al thin films prepared by direct current magnetron sputtering with highly conductive ZnO(ZnAl2O4) ceramic target

Using a highly conductive ZnO(ZnAl₂O₄) ceramic target, c-axis-oriented transparent conductive ZnO:Al₂O₃ (ZAO) thin films were prepared on glass sheet substrates by direct current planar magnetron sputtering. The structural, electrical and optical properties of the films (deposited at different temperatures and annealed at 400°C in vacuum) were characterized with several techniques. The experimental results show that the electrical resistivity of films deposited at 320°C is 2.67×10⁻⁴ Ω cm and can be further reduced to as low as 1.5×10⁻⁴ Ω cm by annealing at 400°C for 2 h in a vacuum pressure of 10⁻⁵ Torr. ZAO thin films deposited at room temperature have flaky crystallites with an average grain size of ∼100 nm; however those deposited at 320°C have tetrahedron grains with an average grain size of ∼150 nm. By increasing the deposition temperature or the post-deposition vacuum annealing, the carrier concentration of ZAO thin films increases, and the absorption edge in the transmission spectra shifts toward the shorter wavelength side (blue shift).     

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge₂Sb₂Te₅ thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10⁷ to 10³ Ω/□ at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge₂Sb₂Te₅ films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 × 10^?3 and 2.725 Ω m, sheet resistance is 3.37 × 10⁴ and 2.725 × 10⁷ Ω/□ respectively, deduced from the I–V curves that is obtained by conductive atomic force microscope (C-AFM).     

Characterization of deep levels in a-plane GaN epi-layers grown using various growth techniques

To study the correlation between defects and deep levels in a-plane GaN films grown on r-plane sapphire substrates, transmission electron microscopy (TEM) and deep level transient spectroscopy (DLTS) have been performed on three types of a-plane GaN samples grown using modified two-step growth (sample I), SiN_x interlayer (sample II), and patterned insulator on sapphire substrate (sample III). From the microstructure evolution in cross-sectional TEM images, it was shown that combination of growth techniques is highly efficient in the reduction of dislocation densities. Average dislocation densities of samples I, II, and III were about 2.2×10⁹ cm^?2, 1.1×10⁹ cm^?2, and 3.4×10⁸ cm^?2, respectively. The trap a_t E_c–E_t～0.13 eV (E1) was observed in only sample I, and three electron traps at 0.28–0.33 eV (E2), 0.52–0.58 eV (E3), and 0.89–0.95 eV (E4) from the conduction band edge were measured common to all the samples. The analysis of trap properties indicated that E2 and E3 trap levels are strongly associated with the partial dislocations in a-plane GaN films.     

Effect of illumination on hydrogenated amorphous silicon thin films doped with chalcogens

Hydrogenated amorphous silicon thin films doped with chalcogens (Se or S) were prepared by the decomposition of silane (SiH₄) and H₂Se/H₂S gas mixtures in an RF plasma glow discharge on 7059 corning glass at a substrate temperature 230 °C. The illumination measurements were performed on these samples as a function of doping concentration, temperature and optical density. The activation energy varied with doping concentration and is higher in Se-doped than S-doped a-Si:H thin films due to a low defect density. From intensity versus photoconductivity data, it is observed that the addition of Se and S changes the recombination mechanism from monomolecular at low doping concentration films to bimolecular at higher doping levels. The photosensitivity (σ_ph/σ_d) of a-Si, Se:H thin films decreases as the gas ratio H₂Se/SiH₄ increased from 10^?4 to 10^?1, while the photosensitivity of a-Si, S:H thin films increases as the gas ratio H₂S/SiH₄ increased from 6.8 × 10^?7 to 1.0×10^?4.     

Kerr studies of several tellurite glasses

Estimates of Kerr electrooptical sensitivity of several tellurite glasses are presented. The highest value of Kerr coefficient B ～ 190 × 10^?16 m V^?2 is registered for 0.6TeO₂–0.3TlO_0.5–0.1ZnO glass. This evidences the prospects of thallium–tellurite glass system for electrooptical applications. A gradual decrease of B from 41 × 10^?16 to 26 × 10^?16 m V^?2 in (1 ? x) TeO₂ – xNbO_2.5 system is revealed for x increasing from 0.1 to 0.15. No crystalline phase was found in that system, thus allowing attributing its Kerr sensitivity to the intrinsic properties of the glass matrix. The Kerr coefficient variation from 66 to 81 × 10^?16 m V^?2 was observed for 0.85TeO₂–0.15WO₃ glasses co-doped with small amounts of silver and cerium. The analysis of optical absorption spectra of several silver-containing tellurium–tungsten oxide glasses makes it possible to think that introducing cerium provokes formation of new mid-range orderings.     

Transparent thin film transistors based on indium oxide semiconductor

Indium oxide films were deposited by radio-frequency plasma enhanced reactive thermal evaporation (rf-PERTE). The combined use of rf power and oxygen pressure allowed the control of the crystallite size in the film, changing the optical and electrical properties. The films obtained have electrical resistivity ranging from 13.7 to 1.7 × 10⁷ Ω cm. Transparent TFTs made with those films as semiconducting and conducting layers, respectively, present threshold voltages near 2 V and on/off ratios of 10⁴.     

Vacuum-deposited poly(o-methoxyaniline) thin films: Structure and electronic properties

Thin poly(o-methoxyaniline) (POMA) films have been formed by thermovacuum deposition in the temperature range of 350–450 °C and at a pressure of 5 × 10^?5 Torr. The structure properties of vacuum deposited POMA films according to FTIR and UV–VIS spectra are similar to those observed for the emeraldine form of polyaniline. Current–voltage characteristics (I–V) of sandwichtype device ITO/POMA/A1 possess rectifying properties with the ideality factor ≈4 at room temperature. On the basis of the dependence of conductivity on frequency in the frequency range of 10 Hz to 1 MHz, it is shown that the Pollack–Pohl current flow hopping mechanism dominates in a polymer film; such mechanism is typical of non-ordered systems.     

Influence of hydrogen on the thermomechanical properties of a-CNx:H and a-CNx films deposited by glow discharge and ion beam assisted deposition

The coefficient of thermal expansion (CTE), Young’s modulus, Poisson’s ratio, stress and hardness of a-CN_x and a-CN_x:H were investigated as a function of nitrogen concentration. Hydrogenated films were prepared by glow discharge, GD, and unhydrogenated films were prepared by ion beam assisted deposition, IBAD. Using nanohardness measurements and the thermally induced bending technique, it was possible to extract separately, Young’s modulus and Poisson’s ratio. A strong influence of hydrogen, in a-CN_x:H films, was observed on the CTE, which reaches about ∼9 × 10⁻⁶ C⁻¹, close to that of graphite (∼8 × 10⁻⁶ C⁻¹) for nitrogen concentration as low as 5 at.%. On the other hand, the CTE of unhydrogenated films increases with nitrogen concentration at a much lower rate, reaching 5.5 × 10⁻⁶ C⁻¹ for 33 at.% nitrogen.     

Growth,electrical and optical behaviour of nanocrystalline Ag2Cu2O3 films produced by RF magnetron sputtering

Thin films of Ag₂Cu₂O₃ were formed on glass substrates by RF magnetron sputtering technique under different oxygen partial pressures in the range 5 × 10^‐3 – 8 × 10^‐2 Pa using mosaic target of Ag₇₀Cu₃₀. The influence of oxygen partial pressure on the core level binding energies, crystallographic structure, and electrical and optical properties of the deposited films was studied. The atomic ratio of copper to silver in the films was 0.302. The oxygen content was in correlation with the oxygen partial pressure maintained during the growth of the films. The films formed at oxygen partial pressures < 2 × 10^‐2 Pa was mixed phase of Ag₂Cu₂O₃ and Ag. The films deposited at 2 × 10^‐2 Pa were single phase of Ag₂Cu₂O₃. The crystallite size of the films formed at 2 × 10^‐2 Pa was 12 nm, while those films annealed at 473 K was 16 nm. The nanocrystalline Ag₂Cu₂O₃ films formed at oxygen partial pressure of 2 × 10^‐2 Pa showed electrical resistivity of 8.2 Ωcm and optical band gap of 1.95 eV. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Bond character,optical properties and ionic conductivity of Li2O/B2O3/SiO2/Al2O3 glass: Effect of structural substitution of Li2O for LiCl

A glass of composition (20 ? x)Li₂O–xLiCl–65B₂O₃–10SiO₂–5Al₂O₃ where 0 ? x ? 12.5 wt% is prepared using the normal melt-quenching technique. The optical constants and electrical conductivity and their correlation are investigated, furnished and discussed with the substitution of Li₂O for LiCl. The mechanism of the optical absorption and the calculated Urbach energy follow the rule of phonon-assisted transitions. The ionic conduction mechanism is determined by activation energy process. Substitution up to 10 wt% LiCl provides high ionic conductivity (1.9 × 10^?2 Ω^?1 m^?1) due to the high average electronegativity of LiCl which increases the polarizability of lithium ions. The small cation–anion distance approach confirmed the enhancement in ionic conductivity of LiCl containing glass compared to that of Li₂O. Due to the large size of Cl^? ions, there is an expansion of the lattice which in turn broadens the available path windows. For 12.5 wt% LiCl, anomalous density behavior is observed and a reduction in conductivity is occurred, σ = 5.4 × 10^?3 Ω^?1 m^?1. Owing to the model of bond fluctuation, the reduction is attributed to the increase in the alkali halide concentration which creates bottlenecks that hinder the motion of Li⁺ ions. The ionic conductivity character is strongly supported by the behavior of the glass ionicity factor, density, molar volume, refractive index, average boron–boron separation, molar refraction, metallization criterion and non-bridging oxygen concentration of the studied glass.     

Impurities in thin-film silicon: Influence on material properties and solar cell performance

The influence of oxygen and nitrogen impurities on the material properties of a-Si:H and μc-Si:H films and on the corresponding solar cell performances was studied. For intentional contamination of the i-layer the impurities were inserted by two contamination sources: (i) directly into the plasma through a leak at the chamber wall or (ii) into the gas supply line. The critical oxygen and nitrogen concentrations for silicon solar cells were determined as the lowest concentration of these impurities in the i-layer causing a deterioration of the cell performance. Similar critical concentrations for a-Si:H and μc-Si:H cells in the range of 4–6 × 10¹⁸ cm^? 3 for nitrogen and 1–5 × 10¹⁹ cm^? 3 for oxygen by applying a chamber leak are observed. Similar increase of conductivity with increasing impurity concentration in the a-Si:H and μc-Si:H films is found. A more detailed study shows that the critical oxygen concentration depends on the contamination source and the deposition parameters. For a-Si:H cells, the application of the gas pipe leak leads to an increased critical oxygen concentration to 2 × 10²⁰ cm^? 3. Such an effect was not observed for nitrogen. For μc-Si:H, a new deposition regime with reduced discharge power was found where the application of the gas pipe leak can also result in an increase of the oxygen concentration to 1 × 10²⁰ cm^? 3.     

Device grade hydrogenated polymorphous silicon deposited at high rates

Hydrogenated polymorphous silicon (pm-Si:H) thin films have been deposited by plasma-enhanced chemical vapor deposition at high rate (8–10 Å/s), and a set of complementary techniques have been used to study transport, localized state distribution, and optical properties of these films, as well as the stability of these properties during light-soaking. We demonstrate that these high deposition rate pm-Si:H films have outstanding electronic properties, with, for example, ambipolar diffusion length (L_d) values up to 290 nm, and density of states at the Fermi level well below 10¹⁵ cm^?3 eV^?1. Consistent with these material studies, results on pm-Si:H PIN modules show no dependence of their initial efficiency on the increase of the deposition rate from 1 to 10 Å/s. Although there is some degradation after light-soaking, the electronic quality of the films is better than for degraded standard hydrogenated amorphous silicon (values of L_d up to 200 nm). This result is reflected in the light-soaked device characteristics.     

Structure and properties of the 70Li2S · (30 − x)P2S5 · xP2O5 oxysulfide glasses and glass–ceramics

The 70Li₂S · (30 ? x)P₂S₅ · xP₂O₅ (mol%) oxysulfide glasses were prepared by the melt quenching method. The glasses were prepared in the composition range 0 ≦ x ≦ 10. The glass–ceramics were prepared by heating the glasses over crystallization temperatures. The PO_nS_3?n (n = 1–3) oxysulfide units were produced in the glasses and glass–ceramics by partial substituting P₂O₅ for P₂S₅. In particular, the P₂OS₆^4? unit would be produced by substituting a small amount of P₂O₅ for P₂S₅. The oxygen atoms were incorporated into the Li₇P₃S₁₁ crystal structure because the diffraction peaks of the oxysulfide glass–ceramic shifted to the higher angle side. The glass–ceramic with 3 mol% of P₂O₅ exhibited the highest conductivity of 3.0 × 10^?3 S cm^?1 and the lowest activation energy for conduction of 16 kJ mol^?1. The P₂OS₆^4? dimer units in the oxygen-incorporated Li₇P₃S₁₁ crystal would improve conductive behavior of the Li₂S–P₂S₅ glass–ceramics.     

A narrow process window for the preparation of polytypes of microcrystalline silicon carbide thin films by hot-wire CVD method

Effects of deposition conditions on the structure of microcrystalline silicon carbide (μc-SiC) films prepared by hot-wire chemical vapor deposition (hot-wire CVD) method have been investigated. It is found from X-ray diffraction patterns of the film that a diffraction peak from crystallites from hexagonal polytypes of SiC is observed in addition to those of 3 C-SiC crystallites. This result is obtained in the film under a narrow deposition conditions of SiH₃CH₃ gas pressure of 8 Pa, the H₂ gas pressure of 80–300 Pa and the total gas pressure of 40–300 Pa under fixed substrate and filament temperatures employed in this study. Furthermore, the grain size of hexagonal crystallites (about 20 nm) on c-Si substrates becomes larger than that of 3 C-SiC crystallites (about 10 nm) for the films deposited under the total gas pressure of 36–88 Pa. The fact that microcrystalline hexagonal SiC can be deposited under limited deposition conditions could be interpreted in the context of a result for c-SiC polytypes prepared by thermal CVD method.     

Thin film membrane based on a-SiGe: B and MEMS technology for application in cochlear implants

In this work is presented the fabrication of a thin film membrane as a bio-transducer for aural assistance detection, therefore it will operate at low pressure. The resonant membrane was deposited by PECVD technique at low temperature of deposition T = 270 °C, using SiH₄, GeH₄, and Boron gases. The membrane was suspended on a micromachined crystalline silicon frame obtained by wet chemical etching. The a-SiGe:B film presented a resistivity of 2.46 × 10³ (Ω-cm), resistance of 20.8 kΩ. Using these experimental data we succeeded in designing a simple structure for sensing low pressure variations. The output voltage of the sensor was measured for a range of pressure from 0 to 3000 Pa and at bias voltage of 10 V.     

Effect of deposition pressure on microstructure and properties of hydrogenated carbon nitride films prepared by DC-RF-PECVD

Hydrogenated carbon nitride (a-CN:H films) were deposited on n-type (1 0 0) silicon substrates making use of dual direct current radio frequency plasma enhanced chemical vapor deposition (DC-RF-PECVD), at working pressure of 2–20 Pa, using a mixed gas of CH₄ and N₂ as the source gas. The growth rate, composition, bonding structure of the deposited films were characterized by means of XPS and FTIR, and the mechanical properties of the deposited films were investigated by nano-indentation test. It was found that the parameters for the DC-RF-PECVD process had significant effects on the growth rate, structure and properties of the deposited films. The growth rate of the deposited films increased at first with increasing deposition pressure, then saturated with further increase of the deposition pressure. The N/C ratio inside the deposited films increased with increasing working pressure except that it was as much as 0.50 at a working pressure of 5.0 Pa. The nano-hardness of the films decreased with increasing deposition pressure. CN radicals were remarkably formed in the deposited films at higher pressures, and their contents are related to the nitrogen concentrations in the deposited films.     

Synthesis and characterizations of phthaloyl chitosan-based polymer electrolytes

Phthaloyl chitosan (PhCh) has been synthesized by reacting excess phthalic anhydride with chitosan in the presence of nitrogen gas (N₂). Confirmation of phthaloyl chitosan structure by Fourier-transform infrared (FTIR) spectroscopy shows bands at 1773 and 1713 cm^? 1 attributable to the pthalimido group. From X-ray diffraction (XRD), the samples are largely amorphous. Thermal stability of chitosan is increased on phthaloylation. Ammonium thiocyanate (NH₄SCN) salt has been added to the solution of phthaloyl chitosan in N,N-dimethylformamide (DMF) before casting to form films. The amount of NH₄SCN salt added ranges from 5 to 50 wt. % concentration. The highest conductivity at 298 K is (2.42 ± 0.01) × 10^? 5 S cm^? 1 for the sample 70 wt. % PhCh-30 wt. % NH₄SCN. Impedance of the films has been measured at temperatures between 298 K and 373 K and in the frequency range from 0.1 Hz to 1 × 10⁷ Hz. Relaxation peaks are observed from dielectric loss and tangent delta variation with frequency at ambient and elevated temperatures in the frequency range investigated for the highest conducting sample. Decomposition voltage is ~ 2.07 V and transference number measurements show that charge conduction is mainly by ions.     

Crystal growth and spectral properties of Nd3+:Ca9Gd(VO4)7 crystal

An Nd³⁺:Ca₉Gd(VO₄)₇ crystal with dimensions of ?25×30 mm³ was grown by the Czochralski method. The hardness, thermal expansion coefficient and thermal conductivity coefficient of the crystal were measured. The spectroscopic characteristics of Nd³⁺:Ca₉Gd(VO₄)₇ crystals were investigated. The absorption band at 810 nm has an FWHM of 10 nm, and absorption cross-sections are 5.81×10^?20 cm² for π-polarization and 7.47×10^?20 cm² for σ-polarization at 810 nm. The emission cross-sections at 1067 nm are 4.2×10^?20 and 6.5×10^?20 cm² for π- and σ-polarizations, respectively. The quantum efficiency η_c is equal to 94.3%. To sum up the above results, Nd³⁺:Ca₉Gd(VO₄)₇ crystal can be regarded as a highly efficient solid state laser material.