Thermodynamic restrictions of LPE of bismuth-containing А3В5 solid solutions

A heterophase equilibrium estimation procedure is proposed for systems InBiAsSb and GaInBiAsSb using the simple solution model and a ‘virtual’ GaBi compound. Thermodynamic characteristics and crystal-chemical parameters of the GaBi compound have been determined for the calculation with the linear interpolation method. Phase equilibrium in In–Bi–As–Sb and Ga–In–Bi–As–Sb systems has been analyzed for the 650–780 K temperature range. The existence limits for solid solutions have been set and the thermodynamic restrictions characterizing the capacity for synthesis have been ascertained. The data obtained may be useful in optimization of LPE methods.     

Bridgman growth of CdxHg1−xTe— A review

Recent developments in the bulk Bridgman growth method for Cd_xHg_1−xTe are reviewed. Both melt mixing and heat flow control techniques have been applied in attempts to produce more uniform material in terms of composition. In the U.K. work has concentrated on application of the Accelerated Crucible Rotation Technique (ACRT) to achieve the required uniformity improvements. Elsewhere, various means to control isotherm shape have been used with the same aim. The ultimate use of the material is in infra-red detectors and Bridgman grown Cd_xHg_1−xTe has produced these successfully for both photoconductive and photovoltaic applications.     

Ga and In incorporation rates in Ga1−xInxAs growth by chemical beam epitaxy

GaAs, InAs and Ga_1?xIn_xAs layers were grown by chemical beam epitaxy (CBE) using triethylgallium, trimethylindium and tertiarybutylarsine as precursors for Ga, In and As, respectively. The growth rate during the homoepitaxial growth of GaAs and InAs, deduced from the frequency of reflection high-energy electron diffraction intensity oscillations, was used to calibrate the incorporation rates for the III elements. The In content of the Ga_1?xIn_xAs layers was measured by Rutherford backscattering spectrometry and compared with the value predicted from the above calibration data; while the measured In mole fraction is close to the predicted value for the samples grown for low In to Ga flux ratios (x<0.2), the In incorporation is enhanced for larger values of this ratio. The results obtained on layers grown at different substrate temperatures show that In mole fraction is almost constant at growth temperatures in the range 400–500 °C, but a strong dependence on the substrate temperature has been found outside this range. The above results, not observed for samples grown by solid source molecular beam epitaxy, indicate that some interaction between Ga and In precursors at the sample surface could take place during the growth by CBE.     

Modeling of convection during the growth of Ga x In1 − x Sb single crystals by the Czochralski method in the presence of ultrasound

Crystallography Reports - The effect of ultrasound on convective flow in the melt at pulling of Ga0.03In0.97Sb single crystals has been modeled by the light cut method in an ebonite crucible using...     

Thermodynamic analysis of the W-Al2O3 system near the melting temperature of Al2O3. I. Evolution of the system in the pressure range of 1 × 10−1−1 × 10−4 bar

The changes in the main chemical reactions occurring upon the interaction between tungsten and the evaporation products of Al₂O₃ melt are considered at a fixed temperature (2400 K). The concentrations of the components coexisting in equilibrium in a closed system under isobaric-isothermal conditions are determined by stochastic simulation for low (× 10⁻¹−1 × 10⁻³ bar) and high (1 × 10⁻⁴ bar) vacuum. It is shown that the gas-liquid-solid system is in heterogeneous equilibrium for the basic component ratio W: Al₂O₃ = 1: 1 in the entire pressure range under consideration. A detailed study of the chemistry of this system should facilitate the choice of the optimal conditions for growing leucosapphire crystals from melt.     

Raman investigation of ZnO and Zn1−xMnxO nanocrystals synthesized by precipitation method

Zn_1?xMn_xO nanocrystal samples have been successfully synthesized using the chemical precipitation method in aqueous solution. Comparing with pure ZnO NC, the Raman data recorded from the manganese-doped nanocrystals shows an enhancement of the peaks located at 334 and 439 cm^?1. Besides, a new feature at 659 cm^?1 emerges. X-ray diffraction (XRD) of the as-precipitated nanocrystal samples illustrates that Mn-doping only makes the XRD peaks of the as-precipitated Mn-doped nanocrystals shift towards lower angle values, but the crystal structure of bulk ZnO is still preserved in the Mn-doped samples. Hence, the high quality Zn_1?xMn_xO (x ? 0) nanocrystals are formed through the replacement of zinc ions by manganese ions.     

Photo-acoustic spectroscopy of SixSe1−x glasses

The optical properties near the fundamental absorption edge has been studied for a series of Si_xSe_1−x glasses using photoacoustic spectroscopy. The compositional dependence of the bandgap E_O, derived from these measurements, is presented and contrasted with the GeSe and the SiS systems. This data is qualitatively explained with a model which accounts for differing numbers of homopolar and heteropolar and heteropolar bonds as the composition is varied. Additional support for this interpretation is found in the compositional behavior of the glass transitions of these alloys.     

Characteristics of GaAs?AlGaAs (SCH) lasers grown by low-temperature LPE technique

In this paper we report the performance and study of GaAs AlGaAs (SCH) laser. The structures were grown by a new variant of the LPE-technique with temperatures regimes lower than 600 °C. The Low Temperature LPE-technique, recently propoused by ANDREEV and coworkers at the IOFFE-Physico-Technical Institute exhibit growth rates of the growing layers as low as that corresponding to MBE or MOCVD techniques. In this way, it is possible to obtain and control layer thicknesses in the structure of the order of tens to hundreds of Ångströms. Laser heterostructures with active layer thickness of 30 nm, were performed and the lowest threshold current density of 437 A/cm² for a cavity length of 1.33 mm were obtained. A typical growth process is described and a SEM structure microphotograph is shown. The dependences of the threshold current density J_th and the differential quantum efficiency η_d with the cavity length L are reported. From these data, other laser parameters are evaluated such as internal optical losses α₁, internal quantum efficiency η_i and the dependence of the maximum of the gain factor against the nominal current density J_nom at threshold. This dependence was compared with the theoretical predictions and a good agreement was found.     

Improvement of a-Si1−xGex:H single-junction thin-film solar cell performance by bandgap profiling techniques

In this work, the effect of hydrogen dilution on the Ge content of the film and the effect of bandgap grading in the a-Si_1?xGe_x:H absorber near the p/i and the i/n interfaces on cell performance were discussed. The a-Si_1?xGe_x:H single-junction solar cells were improved by employing both p/i grading and i/n grading. The i/n grading increased the V_OC and the FF while it also reduced the J_SC as compared to the cell without grading. Presumably the potential gradient established by the i/n grading facilitates the hole transport hereby improved by the FF. On the contrary, the potential barrier established by the p/i grading seemed to limit the cell performance and constrain the p/i grading width below 20 nm due to the drop in FF and J_SC. Combining the effects of bandgap grading on the V_OC, J_SC and FF, the suitable thicknesses of the p/i and the i/n grading were 20 nm and 45 nm, respectively. Finally, the grading structures accompanied with further optimization in doped layers were integrated to achieve a cell efficiency of 8.59%.     

Growth of Ga x In1 − x Sb solid solution single crystals by the Czochralski method

Crystallography Reports - Ga x In1 ? x Sb solid solution single crystals (x = 0.03–0.09) have been grown. The dislocation density and electrophysical parameters are measured. A...     

Ab initio calculation of vibrational frequencies of GexSe1−x glass

We have used the density functional theory to make the models of Ge_xSe_1?x glass for which the energy is a minimum. The clusters, Ge₂Se₂, Ge₂Se₃, Ge₃Se, Ge₃Se₂, Ge₄Se, GeSe₃, GeSe₄, chain mode zig-zag Ge₄Se₃, corner sharing GeSe₄, and edge sharing Ge₂Se₆, have been made successfully and their vibrational spectra have been calculated from the first principles. We are able to optimize the bond distances as well as the bond angles. The calculated values of the frequencies of vibrations of the various clusters have been compared with those obtained from the experimental Raman spectra of actual glasses, Ge_xSe_1?x(0 < x < 0.3). The local concentration, x within 0.25 nm is nonuniform in the amorphous material. When the same cluster occurs in two stable configurations, low frequency vibrations of frequency, ν < 100 cm^?1, are found. The corner sharing GeSe₄ has low frequency modes at 54 cm^?1 and 93 cm^?1 whereas these modes disappear in the pyramidal configuration. The low frequency modes are therefore associated with the breaking of C₄ symmetry of the pyramidal configuration. The computed vibrational frequencies of clusters Ge₃, Ge₄Se₃, Ge₂Se₃, GeSe₃ and Ge₃Se₂ are actually present in the Raman spectra of the glass, Ge_xSe_1?x(0 < x < 0.3).     

Growth and structural properties of Zn1−xCrxTe crystals

Single crystals of Zn_1?xCr_xTe were grown by vapour phase growth method in the composition range of 0?x?0.005. Chemical analysis, surface morphology, structural and microhardness studies were carried out by EDAX, SEM, XRD and Vicker's indentation techniques, respectively. Microscopic variations between the target and actual compositions were noticed. Morphology studies revealed that dislocation aided growth is active in the present crystals. XRD studies showed that samples of all compositions crystallized in zinc blende structure, and the lattice parameters varied linearly with x following Vegard's law. Vicker's hardness (H_v) decreased exponentially with x.     

Extrinsic doping of CdxHg1−xTe— A review

Extrinsic doping by elements which are stable to subsequent processing will become increasingly important in future infra-red device structures based on Cd_xHg_1−xTe. This paper reviews the incorporation and activation of dopants in the most widely used bulk and epitaxial growth methods. Stoichiometry at the growth temperature is shown to be the critical factor affecting dopant activation. Various factors, including stoichiometry, can affect the as-grown electrical properties and the importance of determining the type of conduction in the as-grown state, if successful extrinsic doping is to be accomplished, is stressed. Data on dopant segregation behaviour, in growth from liquids, acceptor ionization energies and carrier lifetimes are also presented and their importance is discussed.     

Effects of post-annealing temperature on structural,optical, and electrical properties of MgxZn1−xO films by RF magnetron sputtering

Mg_xZn_1?xO thin films were deposited on quartz substrates by RF magnetron sputtering. The effect of post-annealing temperature on structural, optical, and electrical properties was investigated with the annealing temperatures increasing from 450 to 750 °C. The crystallinity of Mg_xZn_1?xO film annealed at 650 °C was significantly improved while the film annealed at 750 °C showed little improvement. The electrical properties degraded with the increase of annealing temperature. The annealing temperature seemed to impact the E_g value of Mg_xZn_1?xO thin films because of the variation of carrier concentration.     

Change of bonding system in liquid SexTe1−1 alloys as shown by density measurements

Density measurements have been performed on melts in the binary chalcogenide system Se_xTe_1?x up to a temperature of 950°C. Anomalous behaviour of the density was observed. At higher temperatures the density increased on raising the temperature up to a maximum whose position shifts to lower temperatures with increasing concentration of tellurium. This anomalous density behaviour clearly shows an increase of the average coordination number of atoms in the melt. This increase of CN is caused by a change of the bonding system because of the tendency of Te to form pσ bondings. It was assumed that there exist two distinct structures in thermodynamical equilibrium at each temperature according to a law of mass action, for which cooperation effects have to be taken in account. At low temperatures Te atoms easily accept a loosely packed structure I with the aid of selenium. At high temperatures even Se atoms develop a more densely packed structure II with the aid of Te.     

Stoichiometry–structure correlation of epitaxial Ce1−xPrxO2−δ (x=0−1) thin films on Si(111)

Epitaxial oxide thin film layers are of interest for model catalytic studies. We report the growth of Ce_1?xPr_xO_2?δ mixed oxide layers of different stoichiometries (x=0–1) and oxygen deficiency (δ>0) on Si(111) by co-evaporating molecular beam epitaxy. The main objective is to identify the crystal phases and to investigate the correlation between compositions and crystal structures. X-ray photoemission spectroscopy was performed to quantify the stoichiometries. An extensive laboratory and synchrotron based X-ray diffraction analysis was carried out to determine the vertical and lateral lattice orientations and the strain status of the layers. The study revealed that single crystalline Ce_1?xPr_xO_2?δ/Si(111) heterostructures can be epitaxially grown on Si(111) for model catalytic studies. In addition to the structure–stoichiometry relationship typical to mixed oxide bulk powders, we identified a hexagonal mixed Ce–Pr oxide thin film phase not yet reported in bulk studies.     

Growth and characterization of lead-free Ba(1−x)CaxTi(1−y)ZryO3 single crystal

A lead-free Ba_(1?x)Ca_xTi_(1?y)Zr_yO₃ (BCZT) single crystal (x=0.08, y=0.26) was grown by the Czochralski (CZ) method in a mixed flux of TiO₂ and ZrO₂. The composition of as-grown BCZT was analyzed by electron probe micro-analysis. The structure, dielectric properties and phase transition were investigated at different temperatures. The X-ray diffraction results confirmed that the structure of the as-grown BCZT crystal was cubic both at 25 °C and 500 °C. The temperature dependence of the dielectric constant and Raman spectra characterization revealed that there was a phase transition from cubic to tetragonal, which happened between 200 K and 250 K. With increasing frequency, the Curie temperature shifted towards high temperature.