Effects of post-annealing temperature on structural,optical, and electrical properties of MgxZn1−xO films by RF magnetron sputtering

Mg_xZn_1?xO thin films were deposited on quartz substrates by RF magnetron sputtering. The effect of post-annealing temperature on structural, optical, and electrical properties was investigated with the annealing temperatures increasing from 450 to 750 °C. The crystallinity of Mg_xZn_1?xO film annealed at 650 °C was significantly improved while the film annealed at 750 °C showed little improvement. The electrical properties degraded with the increase of annealing temperature. The annealing temperature seemed to impact the E_g value of Mg_xZn_1?xO thin films because of the variation of carrier concentration.     

Structure and electrical properties of nitrided NbN–TiN sol–gel derived films

The results of investigations of electrical conductivity and the structure of NbN–TiN thin films in a different NbN/TiN molar ratio are presented in this work. Sol–gel derived xNb₂O₅?(100?x)TiO₂ coatings (where x = 100, 90, 80, 70, 60, 50, 40, 0 mol%) were nitrided at 1200 °C to obtain NbN–TiN films. The structural transformations occurring in the films as a result of ammonolysis were studied using X-ray diffraction (XRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The electrical conductivity was measured with a conventional four-terminal method in the temperature range of 5–280 K. The NbN–TiN samples exhibited a negative temperature coefficient of resistivity. The positive temperature coefficient of resistivity was observed only for the x = 0 sample. The results of conductivity versus temperature may be described on the grounds of a model proposed for a weakly disordered system. The film thickness effect on the superconducting properties was studied for x = 80 and x = 100 samples. The superconducting transition was not observed in all samples, the exception was x = 80 sample, 1050 nm in thickness. It is not clear, why all x = 100 samples do not exhibit superconducting transition in resistivity measurements. It seems to be possible, that the Josephson junction formation between NbN grains could be blocked by non-superconducting phases present in these samples.     

The effects of annealing and rate of deposition on the electrical,optical and structural properties of amorphous GeSi alloy films

The electrical, optical and structural properties of rf-sputtered amorphous GeSi alloy films have been investigated as functions of the rate of deposition between 90 and 360 Å min^?1, and various annealing conditions. The stabilization evidenced in the electrical conductivity, optical absorption and density of these films deposited at higher rates and/or annealing temperatures may be explained in terms of the reduction of imperfections in the as-deposited films.     

Transition from amorphous semiconductor to amorphous insulator in hydrogenated carbon–germanium films investigated by IR spectroscopy

Thin a-Ge_XC_1?X:H plasma polymerized films, depending on deposition conditions, can be produced in two very different structures, namely amorphous semiconductor and amorphous insulator. The transition from amorphous insulator to amorphous semiconductor is related to the formation of germanium nanoclusters due to ions bombarding the surface of the growing material. This paper concentrates on investigations of the transition by means of IR spectroscopy. To this end a quantitative analysis of IR spectra obtained for thin films deposited on silicon substrate has been described and used for estimation of hydrogen atom concentration and bonding in the investigated material. It was found that the probability that a given H atom is bonded to a germanium or to a carbon atom is almost the same. This conclusion is true both for a-S and a-I films. The average concentration of hydrogen in the investigated material was found to be about 2.4–3.4 × 10²² cm^?2 which means that there are two times more atoms of the carbon family than hydrogen atoms in the film structure.     

Determination of mechanical, electrical and thermal properties of the Sn―Bi―Zn ternary alloy

The development of lead-free solders has emerged as one of the key issues in the electronics packaging industries. Sn―Zn―Bi eutectic alloy has been considered as one of the lead-free solder materials that can replace the toxic Pb―Sn eutectic solder without increasing soldering temperature. This study investigates the effect of temperature gradient and growth rate on the mechanical, electrical and thermal properties of the Sn―Zn―Bi eutectic alloy. Sn-23 wt.% Bi-5 wt.% Zn alloy was directionally solidified upward with different growth rates (V = 8.3-478.6 μm/s) at a constant temperature gradient (G = 3.99 K/mm) and with different temperature gradients (G = 1.78-3.99 K/mm) at a constant growth rate (V = 8.3 μm/s) in the Bridgman-type growth apparatus. The microhardness (HV), tensile stress (σ_t) and compressive stress (σ_c) were measured from directionally solidified samples. The dependency of the HV, σ_t and σ_c for directionally solidified Sn-23 wt.% Bi-5 wt.% Zn alloy on the solidification parameters (G, V) were investigated and the relationships between them were obtained by using regression analysis. According to present results, HV, σ_t and σ_c of directionally solidified Sn-23 wt.% Bi-5 wt.% Zn alloy increase with increasing G and V. Variations of electrical resistivity (ρ) for cast samples with the temperature in the range of 300-420 K were also measured by using a standard dc four-point probe technique. The enthalpy of fusion (ΔH) and specific heat (C_p) for same alloy was also determined by means of differential scanning calorimeter (DSC) from heating trace during the transformation from eutectic liquid to eutectic solid.     

Spectral response of amorphous–nano-crystalline silicon thin films

A representative set of amorphous–nano-crystalline Si thin films was deposited by radio-frequency plasma enhanced chemical vapor deposition using silane highly diluted by hydrogen. By Raman spectroscopy it was found that the variation of silane to hydrogen ratio resulted in films with crystal fraction between 0 and 55 vol.% and individual crystal sizes between 2 and 20 nm with bi-modal, broad size distribution. High resolution transmission microscopy, done on certain number of samples, confirmed the nano-meter size of crystallites and bi-modal size distribution. The optical properties measured by Fourier transform photocurrent spectroscopy and photo thermal deflection spectroscopy correspond to the material with structure between amorphous and crystalline. The spectral distribution of relative quantum efficiency of photovoltaic solar cell made from this material shows ‘blue shift’ with increase of crystal to amorphous fraction. This result is discussed as a possible consequence of quantum effects accompanied with actual size and size distribution of crystals.     

Properties of amorphous silicon films— Dependence on deposition conditions

We report measurements on the electrical conductivity, optical absorption, electron spin resonance, Raman spectrum and electron diffraction of a set of a-Si films vaccum deposited at room temperature. As revealed by absorption at about 10 μm some of the films grown at deposition rates of about 0.4 Å/sec contain considerable amounts of oxygen. All the properties, except Raman spectra and electron diffraction, are found to vary strongly with the deposition rate and the background pressure during evaporation. Qualitatively, these variations show significant correlations. For instance, if the electrical conductivity is higher so is the spin density, the optical absorption and the low-frequency refractive index. Also, increasing oxygen content leads to lower conductivity. In addition, we have tried to establish a rough quantitative relation between the shift in the optical gap and the change in the spin density by connecting each of these changes to the variation in the low-frequency refractive index. The temperature dependence of the electrical conductivity was also measured and it was found that below about 150 K the data are consistent with recent theoretical predictions, i.e., log σ exhibits a ($\text{1/T)}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$ dependence.     

Effects of tantalum doping on microstructure and ferroelectric properties of Bi4Ti3O12 thin films prepared by a sol–gel method

Tantalum-substituted Bi₄Ti₃O₁₂ (Bi₄Ti_3-x/5Ta_x/5O₁₂, BTTO) thin films were fabricated on Pt(111)/Ti/SiO₂/Si(100) substrates by sol–gel technology. The effects of various processing parameters, including Ta content (x=0～0.08) and annealing temperature (500～800 °C), on the growth and properties of thin films were investigated. X-ray diffraction analysis shows that the BTTO thin films have a bismuth-layered perovskite structure with preferred (117) orientation. With the increase of Ta content, the grain size of film decreased slightly, and highly (117)-oriented BTTO films were obtained in the composition of x=0.06. Ta doping on the B-site of Bi₄Ti₃O₁₂ could induce the distortion of oxygen octahedral and decrease the oxygen vacancy concentration by a compensating effect. The highly (117)-oriented BTTO thin films with x=0.06 exhibits the maximum remanent polarization (2P_r) of 50 μC/cm² and a low coercive field (2E_c) of 104 kV/cm, fatigue free characteristics up to ≧ 10⁸ switching cycles.     

Effect of germanium on the microstructure and the magnetic properties of Fe–B–Si amorphous alloys

In this work, we present a systematic study on the crystallization kinetics and the magnetic properties of melt-spun Fe₈₀B₁₀Si_10 ? xGe_x (x = 0.0 ? 10.0) amorphous alloys. The activation energy for crystallization, determined by differential scanning calorimetry, displayed a strong dependence on the Ge content, reflecting a deleterious effect on the alloys' thermal stability and their glass forming ability with increasing Ge concentration. On the other hand, the alloys exhibited excellent soft magnetic properties, i.e., high saturation magnetization values (around 1.60 T), alongside Curie temperatures of up to 600 K. Complementary, for increasing Ge substitution, the ferromagnetic resonance spectra showed a microstructural evolution comprising at least two different magnetic phases corresponding to a majority amorphous matrix and to Fe(Si, Ge) nanocrystallites for x ≥ 7.5.     

Effects of the mechanoactivation treatment on the structure of ZnO–Zn cermet mixture

Crystallography Reports - ZnO–Zn сermet composite powder with a nanocrystalline structure has been obtained by grinding a mixture of initial powders in a ball mill under inert...     

Kinetics of self-bleaching in some photodarkened Ge–As–S amorphous thin films

Three amorphous Ge–As–S films with the average coordination numbers of 2.4–2.8 were prepared by thermal evaporation. True relaxation that is self-bleaching of photodarkened state has been studied. Considerable differences in kinetics of relaxation of photodarkened state were observed for Ge₁₂As₁₇S₇₁ (Sa 1) and Ge₁₅As₂₀S₆₅ (Sa 3) amorphous thin films. In both cases, the relaxation (self-bleaching) followed stretched exponential, however, flexible matrix of Sa 1 film relaxed significantly faster than the matrix of Sa 3 film. The amorphous film Ge_25.5As_29.5S₄₅ (Sa 8) was found to be insensitive to illumination. It is suggested that the network rigidity may significantly influence the magnitude of photodarkening and the rate of relaxation of photodarkened state.     

Synthesis,characterization and electrical properties of hybrid Zn2GeO4–ZnO beaded nanowire arrays

We report the syntheses of vertically aligned, beaded zinc germinate (Zn₂GeO₄)/zinc oxide (ZnO) hybrid nanowire arrays via a catalyst-free approach. Vertically aligned ZnO nanowire is used as a lattice matching reactive template for the growth of Zn₂GeO₄/ZnO nanowire. The morphology and structure of the as-prepared samples were characterized using X-ray diffractometry (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS). TEM studies revealed the beaded microstructures of the Zn₂GeO₄/ZnO nanowire. The thickness and microstructures of crystalline beads could be easily controlled by tuning the growth duration and temperature. The photoluminescence spectrum of the Zn₂GeO₄/ZnO nanowires is composed of two peaks, i.e., the ultraviolet (UV) peak and the defect peak. For longer treatment duration of the samples, both the UV and defect peak intensities decrease dramatically. One application of the as-prepared Zn₂GeO₄/ZnO nanowire is to use the nanowire as template for the growth of three-dimensionally (3D) aligned, high-density ZnO nanobranches en route to hierarchical structure. The study of field emission properties of the as-prepared samples revealed the low turn-on voltage and high current density electron emission from the 3D ZnO nanobranches as compared to the ZnO nanowires and Zn₂GeO₄/ZnO nanowires. Furthermore, the electrical transport behavior of single hybrid nanowire device indicates the formation of back-to-back Schottky barriers (SBs) formation at the contacts and its application in white-light response has been demonstrated.     

Study of the morphological change of amorphous ITO films after temperature–humidity treatment

Amorphous indium tin oxide (ITO) thin films have been deposited on silicon and Corning 7059 glass substrates at room temperature (RT) and at 75 °C by direct-current magnetron sputtering method. After exposure of the two kinds of samples to the temperature–humidity (T–H) test, we find that there are two different types of circular structures are formed. RT ITO films are composed of granules, and 75 °C ITO films are composed of several different parts which have different Sn and In concentrations. Metallic ion concentration corrosion cells are used to explain the phenomena.     

Effect of tellurium deposition rate on the properties of Cu–In–Te based thin films and solar cells

To investigate the effects of tellurium (Te) deposition rate on the properties of Cu–In–Te based thin films (Cu/In=0.30–0.31), the films were grown on both bare and Mo-coated soda-lime glass substrates at 200 °C by co-evaporation using a molecular beam epitaxy system. The microstructural properties were examined by means of scanning electron microscopy and X-ray diffraction. The crystalline quality of the films was improved with increase in the deposition rate of Te, and exhibited a single CuIn₃Te₅ phase with a highly preferred (1 1 2) orientation. Te-deficient film (Te/(Cu+In)=1.07) grown with a low Te deposition rate showed a narrow bandgap of 0.99 eV at room temperature. The solar cell performance was affected by the deposition rate of Te. The best solar cell fabricated using CuIn₃Te₅ thin films grown with the highest deposition rate of Te (2.6 nm/s) yielded a total area (0.50 cm²) efficiency of 4.4% (V_oc=309 mV, J_sc=28.0 mA/cm², and FF=0.509) without light soaking.     

Effect of alumina on the structure and properties of Li2O–B2O3–P2O5 glasses

The structure of glasses within the system Li₂O–Al₂O₃–B₂O₃–P₂O₅ has been studied through ³¹P, ¹¹B and ²⁷Al Nuclear Magnetic Resonance, and the effect of Al₂O₃ substitution by B₂O₃ and P₂O₅ network formers on the structure and properties investigated for a constant Li₂O content. Multinuclear NMR results reveal that substitution of Al₂O₃ for B₂O₃ and P₂O₅ network formers in a glass with composition 50Li₂O·15B₂O₃·35P₂O₅ produces a change in boron environment from four-fold to three-fold coordination. Meanwhile aluminum can be present in four-, five- and six-fold coordinations a higher amount of Al(IV) groups is found for increasing alumina contents. The behavior of the glass transition temperature and electrical conductivity of the glasses has been interpreted as a function of the structural changes induced in the glass network when alumina is substituted for B₂O₃, P₂O₅ or both. Small additions of alumina produce a drastic increase in glass transition temperature, while it does not change for [Al₂O₃] greater than 3 mol.%. However, the electrical conductivity shows very different behavior depending on the type of substitution; it can remain constant when B₂O₃ content decreases or sharply decrease when P₂O₅ is substituted by Al₂O₃, which is attributed to a higher amount of BO₃ and phase separation.     

Peculiarity of constant photocurrent method for silicon films with mixed amorphous–nanocrystalline structure

The results of conductivity, photoconductivity and constant photocurrent method absorption measurements by DC and AC methods in hydrogenated silicon films with mixed amorphous–nanocrystalline structure are presented. A series of diphasic silicon films was deposited by very high frequency plasma enhanced chemical vapor deposition technique, using different hydrogen dilution ratios of silane. The increase of hydrogen dilution ratio results in five orders of magnitude increase of conductivity and a sharp increase of grain volume fraction. The comparison of the absorption spectra obtained by DC and AC methods showed that they are similar for silicon films with the predominantly amorphous structure and films with high grain volume fraction. However we found a dramatic discrepancy between the absorption spectra obtained by DC and AC constant photocurrent methods in silicon films deposited in the regime of the structure transition from amorphous to nanocrystalline state. AC constant photocurrent method gives higher absorption coefficient than DC constant photocurrent method in the photon energy range of 1.2–1.7 eV. This result indicates the possibility of crystalline grains contribution to absorption spectra measured by AC constant photocurrent method in silicon films with intermediate crystalline grain volume fraction.     

Effects of Zn addition on the improvement of glass forming ability and plasticity of Mg–Cu–Tb bulk metallic glasses

The effects of Zn addition on the glass forming ability and mechanical properties of Mg₆₅Cu_25?xZn_xTb₁₀ (x = 0, 2.5, 5, and 7.5) have been investigated. We show that small amounts of Zn addition improve the glass forming ability, strength, and ductility of the Mg–Cu–Tb bulk metallic glass. For the best glass forming composition, amorphous rods of Mg₆₅Cu₂₀Zn₅Tb₁₀ with a diameter of at least 7 mm have been prepared by a conventional copper mold casting method. Additionally, this composition exhibits obvious yielding and plastic deformation upon quasi-static compressive loading. The fracture strength, total strain to failure, and the plastic strain of the Mg₆₅Cu₂₀Zn₅Tb₁₀ bulk metallic glass reaches 1025 MPa, 2.05% and 0.15%, respectively. This is significantly superior compared to that exhibited by the original Zn-free Mg–Cu–Tb amorphous alloy.