Zircon formation from amorphous powder and melt in the silica-rich region of the alumina–silica–zirconia system

Chemically homogeneous amorphous powders were prepared by sol–gel method from alkoxide mixtures in the silica-rich region of the alumina–silica–zirconia system. A glass with the same composition was obtained by quenching in water from the melt. The evolution with temperature in the range up to 1625 °C was studied by means of X-ray diffraction, infrared and UV-Raman spectroscopy, scanning electron microscopy and energy-dispersive X-ray analysis. Zircon crystallization and stability at temperatures higher than the liquidus temperature were confirmed in both melt-quenched and gel-glasses. Crystallization of cristobalite from the amorphous gel-glasses was observed above 1200 °C. The crystallization of zircon particles was observed after thermal treatment at 1550 °C. At 1625 °C zircon was the only stable crystalline phase due to the complete melting of the silica-rich matrix. The XRD pattern of the ternary gel treated at 1625 °C shows clearly the disappearance of the cristobalite phase, while at 1550 °C there is already partial melting. These results can help to determine the phase equilibrium in the ternary system.     

High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

We report on a growth of AlN at reduced temperatures of 1100 °C and 1200 °C in a horizontal-tube hot-wall metalorganic chemical vapor deposition reactor configured for operation at temperatures of up to 1500–1600 °C and using a joint delivery of precursors. We present a simple route—as viewed in the context of the elaborate multilayer growth approaches with pulsed ammonia supply—for the AlN growth process on SiC substrates at the reduced temperature of 1200 °C. The established growth conditions in conjunction with the particular in-situ intervening SiC substrate treatment are considered pertinent to the accomplishment of crystalline, relatively thin, ～700 nm, single AlN layers of high-quality. The feedback is obtained from surface morphology, cathodoluminescence and secondary ion mass spectrometry characterization.     

Soda lime zirconia silicate glasses as prospective hosts for zirconia-containing radioactive wastes

Na₂O–CaO–ZrO₂–SiO₂ glass compositions with ZrO₂ contents of up to 20 mol% were melted. Up to 12.3 mol% ZrO₂ could be dissolved into the glasses. Melting temperatures ⩾1450 °C were required to remove seed and produce a melt that could be cast. Addition of ZrO₂ caused an increase in the glass transition and crystallization temperatures. Glasses crystallized at temperatures ⩾1050 °C with Keldyshite and Parakeldyshite (Na₂O · ZrO₂ · 2SiO₂) as the crystalline phases. Addition of up to 4.6 mol% ZrO₂ caused an increase in the hydrolytic resistance of the glass, with further additions having little effect. The suitability of these glasses as hosts for ZrO₂-containing radioactive wastes is discussed.     

Characterizations of pulsed laser deposited SiC thin films

Thin films of silicon carbide (SiC) were prepared using pulsed laser deposition (PLD) on Si(1 0 0) substrates at a temperature of 370 °C. Various structural characterizations showed the development of short-range SiC precipitates in the films. These films were annealed isochronally at temperatures of 800 °C, 1000 °C and 1200 °C for 2 h under an inert environment. Thermally induced crystalline ordering of SiC into β-SiC phase was investigated by X-ray diffraction (XRD), Raman spectroscopy and Fourier transforms infrared (FTIR) spectroscopic measurements. In addition to the crystallization of SiC films, high temperature annealing resulted in the dissolution of carbon clusters found in the as-grown films.     

Comparative study on photoluminescence of amorphous and nano-crystalline YAG:Tb phosphors prepared by a combustion method

Amorphous and nano-crystalline Y₃Al₅O₁₂:Tb phosphor samples were obtained via a facile combustion method by calcination at various temperatures, using yttrium oxide and aluminum nitrite as starting materials and citric acid as fuel. XRD, FT-IR and TEM results showed that the products were amorphous if prepared at 750 °C, well-crystalline when treated above 850 °C. In addition, partially crystalline YAG phase was observed at 800 °C (in air). The excitation spectra of the samples calcined at 750 °C and 800 °C exhibited some difference in the 230–255 nm range in comparison to those of nano-crystalline YAG:Tb, i.e. an extra band centered at 250 nm was detected via Gaussian curve-fitting. Furthermore, the photoluminescence intensity of as-synthesized samples decreased obviously with increasing the crystallinity under 250 nm excitation. Contrary, it increased monotonously when altering the excitation wavelength to 323 nm. The concentration-dependent emission spectra of samples calcined at 800 °C revealed that the strongest intensity could be obtained with 10% Tb doping. Red-shifts indicated changes of the inter-atomic distances within the Tb³⁺ coordination polyhedron with increasing Tb concentration. The low temperature photoluminescence of partially crystalline YAG:10% Tb was also investigated, displaying good-resolution but reduced intensity compared to the room-temperature photoluminescence.     

Structural,electrical and optical properties of in-situ phosphorous-doped Ge layers

We have studied the impact of temperature and pressure on the structural and electronic properties of Ge:P layers grown with GeH₄+PH₃ on thick Ge buffers, themselves on Si(0 0 1). The maximum phosphorous atomic concentration [P] exponentially decreased as the growth temperature increased, irrespective of pressure (20 Torr, 100 Torr or 250 Torr). The highest values were however achieved at 100 Torr (3.6×10²⁰ cm^?3 at 400 °C, 2.5×10¹⁹ cm^?3 at 600 °C and 10¹⁹ cm^?3 at 750 °C). P atomic depth profiles, “box-like” at 400 °C, became trapezoidal at 600 °C and 750 °C, most likely because of surface segregation. The increase at 100 Torr of [P] with the PH₃ mass-flow, almost linear at 400 °C, saturated quite rapidly at much lower values at 600 °C and 750 °C. Adding PH₃ had however almost no impact on the Ge growth rate (be it at 400 °C or 750 °C). A growth temperature of 400 °C yielded Ge:P layers tensily-strained on the Ge buffers underneath, with a very high concentration of substitutional P atoms (5.4×10²⁰ cm^?3). Such layers were however rough and of rather low crystalline quality in X-ray Diffraction. Ge:P layers grown at 600 °C and 750 °C had the same lattice parameter and smooth surface morphology as the Ge:B buffers underneath, most likely because of lower P atomic concentrations (2.5×10¹⁹ cm^?3 and 10¹⁹ cm^?3, respectively). Four point probe measurements showed that almost all P atoms were electrically active at 600 °C and 750 °C (1/4th at 400 °C). Finally, room temperature photoluminescence measurements confirmed that high temperature Ge:P layers were of high optical quality, with a direct bandgap peak either slightly less intense (750 °C) or more intense (600 °C) than similar thickness intrinsic Ge layers. In contrast, highly phosphorous-doped Ge layers grown at 400 °C were of poor optical quality, in line with structural and electrical results.     

Insights into effects of annealing on microstructure from SnO2 thin films prepared by pulsed delivery

Tin dioxide thin films were prepared by pulsed laser deposition techniques on clean glass substrates, and the thin films were then annealed for 30 min from 50 to 550 °C with a step of 50 °C, respectively. The influence of the annealing temperature on the microstructural and morphological properties of the tin dioxide thin films was investigated using X-ray diffraction, scanning electron microscopy, transmission electron microscopy and selected area electron diffraction. The experimental results showed that the amorphous microstructure almost transformed into a polycrystalline tin dioxide phase exhibiting a preferred orientation related to the (1 1 0), (1 0 1) and (2 1 1) crystal planes with increased temperatures. The thin film annealed at 200 °C demonstrated the best crystalline properties, viz. optimum growth conditions. However, the thin film annealed at 100 °C revealed the minimum average root-mean-square roughness of 20.6 nm with average grain size of 26.6 nm. These findings indicate that the annealing temperature is very important parameter to determining the thin film quality, which involves the phase formation, microstructure and preferred orientation of the thin films.     

Crystallization of a niobium phosphate glass

Niobium phosphate glasses with composition 37P₂O₅ · 23K₂O · 40Nb₂O₅ are stable in relation to crystallization during the heating process, exhibit a low critical cooling rate, and are potentially good for nuclear wasteforms. The crystallization of these glasses was evaluated by optical microscopy after proper heat treatments, showing that surface crystallization is the main process occurring during the heat treatment. Two main crystalline phases were observed. These crystalline phases were KNb₃O₈ and K₃NbP₂O₉. Surface crystal growth rates were measured in the temperature range of 806–972 °C (T_g = 683 °C) for both crystalline phases. Apparent crystallization enthalpies were determined through the Arrhenius plots of lnU vs. 1/T. The enthalpies are 496 kJ/mol and 513 kJ/mol for each crystalline phase, respectively. The surface density of nucleation sites (N_s) on 3 μm diamond paste polished surfaces is (2.4 ± 0.7) × 10⁸ nuclei/m² for one crystalline phase and (9.8 ± 0.8) × 10⁹ nuclei/m² for the other crystalline phase, when revealed at 838 °C/17.5 h, and these values show a slight variation depending on the time and the temperature. At the tested temperatures, only one crystal phase appeared inside the volume, and a volume density of nucleation sites N_v = 5 × 10⁶ nuclei/m³ was measured.     

Plasma enhanced chemical vapor deposition of ZnO thin films

Zinc oxide thin films were deposited on silicon and corning-7059 glass substrates by plasma enhanced chemical vapor deposition at different substrate temperatures ranging from 36 to 400 °C and with different gas flow rates. Diethylzinc as the source precursor, H₂O as oxidizer and argon as carrier gas were used for the preparation of ZnO films. Structural and optical properties of these films were investigated using X-ray diffraction, reflection high energy electron diffraction, atomic force microscopy and photoluminescence. Highly oriented films with (0 0 2) preferred planes were obtained on silicon kept at 300 °C with 50 ml/min flow rate of diethylzinc without any post annealing. Reflection high energy electron diffraction pattern also showed the crystalline nature of these films. A textured surface with rms roughness ∼28 nm was observed by atomic force microscopy for the films deposited at 300 °C. A sharp peak at 380 nm in the PL spectra indicated the UV band-edge emission.     

Microstructure and properties of spark plasma sintered Fe–Cr–Mo–Y–B–C bulk metallic glass

Fabrication of Fe-based amorphous alloy using spark plasma sintering (SPS) process has been reported. Fully amorphous compacts with ～95% relative density were successfully sintered at temperature about 100 °C lower than glass transition temperature (T_g: 575 °C). Formation of crystalline Fe₂₃(C, B)₆ phases within near-fully dense (～99%) amorphous matrix is observed at sintering temperatures (>550 °C) close to glass transition temperature. Microstructure evolution in sintered compacts indicated that density, degree of crystallinity, and mechanical properties can be effectively controlled by optimizing SPS parameters.     

Pyrolytic conversion studies of blended polycarbosilane and polyaluminasilazane

Multinuclear solid-state NMR spectroscopy, FTIR and Raman experiments are employed to investigate the pyrolytic conversion of blended polycarbosilane and polyaluminasilazane (denoted CA) up to 800 °C, with the aim of studying structural evolutions and interactions between polycarbosilane and polyaluminasilazane during the pyrolysis process. Vinyl and SiCH₃ units can react with Si–H, SiCH₃ and Si–CH₂–Si groups below 400 °C. These crosslinking reactions can increase the ceramic yield of the blended precursors. At 500 °C aromatic carbon is formed, and N–H and Si–H groups vanish at 600 °C and 700 °C, respectively. At 600 °C, SiCH₃ and Si–H units can further react with SiCN₃, SiC₂N₂, N–H and C–H units. An amount of amorphous carbon and CSi₄ and CSi₃H groups are detectable at 800 °C. Even at this temperature there are still many aromatic protons. In addition, there are also SiC₄, SiC₃N, SiCN₃ and SiN₄ units. Silicon forms SiN₄ more readily than SiC₄. Many AlN₅ groups transform into AlN₆ groups. The D and G bands of graphite are observed in CA pyrolyzed at 1400 °C. According to the XRD patterns, the reflection of crystalline β-Si₃N₄ vanishes at 1700 °C, and the residue pyrolyzed at 1800 °C mainly contains a large number of 2H-SiC/AlN solid solution crystals and a few β-SiC crystals.     

ZnO growth on Si with low-temperature ZnO buffer layers by ECR-assisted MBE

High-quality ZnO films were grown on Si(1 0 0) substrates with low-temperature (LT) ZnO buffer layers by an electron cyclotron resonance (ECR)-assisted molecular-beam epitaxy (MBE). In order to investigate the optimized buffer layer temperature, ZnO buffer layers of about 1.1 μm were grown at different growth temperatures of 350, 450 and 550 °C, followed by identical high-temperature (HT) ZnO films with the thickness of 0.7 μm at 550 °C. A ZnO buffer layer with a growth temperature of 450 °C (450 °C-buffer sample) was found to greatly enhance the crystalline quality of the top ZnO film compared to others. The root mean square (RMS) roughness (3.3 nm) of its surface is the smallest, compared to the 350 °C-buffer sample (6.7 nm), the 550 °C-buffer sample (7.4 nm), and the sample without a buffer layer (6.8 nm). X-ray diffraction (XRD), photoluminescence (PL) and Raman scattering measurements were carried out on these samples at room temperature (RT) in order to characterize the crystalline quality of ZnO films. The preferential c-axis orientations of (0 0 2) ZnO were observed in the XRD spectra. The full-width at half-maximum (FWHM) value of the 450 °C-buffer sample was the narrowest as 0.209°, which indicated that the ZnO film with a buffer layer grown at this temperature was better for the subsequent ZnO growth at elevated temperature of 550 °C. Consistent with these results, the 450 °C-buffer sample exhibits the highest intensity and the smallest FWHM (130 meV) of the ultraviolet (UV) emission at 375 nm in the PL spectrum. The ZnO characteristic peak at 438.6 cm⁻¹ was found in Raman scattering spectra for all films with buffers, which is corresponding to the E₂ mode.     

Dielectric spectroscopy of low-loss sugar lyophiles: II. Relaxation mechanisms in freeze-dried lactose and lactose monohydrate

This article presents an analysis of the dielectric relaxation mechanisms of the disaccharide lactose, in both the freeze-dried state and the crystalline monohydrate. Complex dielectric permittivity spectra for both forms of lactose were measured over wide ranges of frequency (0.1 Hz to 1 MHz) and temperature (−120 °C to +100 °C). The crystalline monohydrate displays a sharp peak in the temperature domain which was ascribed to the percolation of migrating protons over the surfaces of the crystals. The freeze-dried material displayed three relaxation processes. The first (γ) and second (β) processes were observed at low temperature and present as very broad relaxations with low dielectric strength. The relaxation times for both processes showed Arrhenius temperature-dependencies, with activation energies of 52 kJ/mol and 72 kJ/mol, respectively. The mechanisms of dielectric relaxation were ascribed to the motion of the pendant hydroxymethyl group and the relative motion of the pair of saccharide rings, respectively. Analysis and discussion of the third relaxation process is beyond of the scope of this article.     

Low-frequency Raman scattering and small-angle X-ray scattering of glasses inclined to phase decomposition

Low-frequency (<1000 cm⁻¹) Raman scattering of lithium aluminosilicate (12Li₂O : 15Al₂O₃ : 73SiO₂ with 4 mol% TiO2) glasses with addition of titanium dioxide has been studied. With a heat treatment at temperatures 660°C, 700°C, 720°C and 820°C and for various times and sequences of temperature, our samples decompose into nanometer sized dispersed aluminotitanate particles. In Raman spectra of these glasses an evolution of a boson peak was observed. The width of the relatively broad boson band decreases as does the frequency of the band. From small-angle X-ray scattering data we conclude that the boson peak is connected with elastic vibrations of amorphous or crystalline regions of inhomogeneity with a dimension of ∼1.7 nm in initial glasses or larger depending on the heat treatment sequences.     

Structural investigations of nitrided Nb2O5 and Nb2O5–SiO2 sol–gel derived films

Sol–gel derived xNb₂O₅–(100 ? x)SiO₂ films (where x = 100, 80, 60, 50, 40, 20, 0 mol%) were nitrided at various temperatures (800 °C, 900 °C, 1000 °C, 1100 °C and 1200 °C). The structural transformations occurring in the films as a result of ammonolysis were studied using X-ray diffraction (XRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The XRD results have shown that the temperatures below 1100 °C were too low to obtain a pure NbN phase in the samples. The AFM observations indicate that the formation of the NbN phase and the size of NbN grains are related to the silica content in the layer. NbN grains become more regular and larger as the niobium content increases. The maximum grain size of about 100 nm was observed for x = 100. Preparation of the Nb₂O₅–SiO₂ sol–gel derived layers and the subsequent nitridation is a promising method of inducing crystalline NbN in amorphous matrices. It follows from the XPS results that a small amount of Nb₂O₅ remains in the films after nitridation at 1200 °C and that nitrogen reacted not only with Nb₂O₅ but also with SiO₂.     

The study of removing hydroxyl from silica glass

The removal of hydroxyl from silica glass produced by melting quartz powder under an atmosphere containing hydrogen was investigated. After heat-treatment at the temperature range (700–1200 °C) in nitrogen atmosphere, the effective hydrogen diffusion coefficients were evaluated based on the law of nonsteady-state diffusion. The activation energy obtained is 254 kJ mol⁻¹ for the dehydroxylation process in the heat-treatment temperature range of 700–900 °C, and a different activation energy calculated is 32 kJ mol⁻¹ in the temperature range of 900–1200 °C. The activation energies for the dehydroxylation process at the temperature (700–900 °C) and the higher temperature (900–1200 °C) correspond to the binding energy of SiO–H bond and the activation energy for the diffusion of hydrogen in silica glass respectively, which indicate there is a change of mechanism for dehydroxylation with heat-treatment temperature.     

Structural and optical properties of TiO2 thin films derived by sol–gel dip coating process

Nanocrystalline thin films of titanium dioxide have been fabricated on glass and silica substrates from partially hydrolyzed precursor solution. These films were subjected to heat treatment for 1 h at temperatures 100, 200, 300, 400, 500, 600, 700, 800 and 900 °C and characterized by XRD, SEM, XPS and optical techniques. As deposited films are found to be amorphous and also contain hydroxyl and organic functional groups. Films heat treated above 100 °C do not contain hydroxyl and organic functional groups. Microcrystalline behavior is observed in the films heat treated above 300 °C. Crystallite size increases from ∼5 to 50 nm as sintering temperature is increased from 300 to 700 °C. Formation of anatase phase with c-axis length 7.03 Å is observed in the films annealed up to 700 °C. These films peel off from the substrate beyond 700 °C annealing temperature. Density as well as refractive index of the films increases with increase in annealing temperature up to 700 °C. Refractive index is found to show Cauchys behavior. Transmission better than 70% is observed in the visible range. There is a strong absorption around 370 nm, which is attributed to band gap absorption of the material.     

Temperature-dependent structural changes in liquid Ge15Te85

The structure of liquid Ge₁₅Te₈₅ has been studied with neutron diffraction in the liquid state up to 740 °C and in the supercooled liquid state down to 345 °C. The temperature dependences of the diffraction patterns are analyzed. It is shown that the liquid Ge₁₅Te₈₅ can be described by the model of heterogeneous structure, which assumes that the melt consists of atoms joined in clusters and a proportion of atoms with higher mobility that fill the space in between clusters. The number and the size of clusters decrease while the volume fraction of ‘free’ atoms increases under heating.     

Improving the performance of amorphous and crystalline silicon heterojunction solar cells by monitoring surface passivation

The influence of thermal annealing on the crystalline silicon surface passivating properties of selected amorphous silicon containing layer stacks (including intrinsic and doped films), as well as the correlation with silicon heterojunction solar cell performance has been investigated. All samples have been isochronally annealed for 1 h in an N₂ ambient at temperatures between 150 °C and 300 °C in incremental steps of 15 °C. For intrinsic films and intrinsic/n-type stacks, an improvement in passivation quality is observed up to 255 °C and 270 °C, respectively, and a deterioration at higher temperatures. For intrinsic/n-type a-Si:H layer stacks, a maximum minority carrier lifetime of 13.3 ms at an injection level of 10¹⁵ cm^? 3 has been measured. In contrast, for intrinsic/p-type a-Si:H layer stacks, a deterioration in passivation is observed upon annealing over the whole temperature range. Comparing the lifetime values and trends for the different layer stacks to the performance of the corresponding cells, it is inferred that the intrinsic/p-layer stack is limiting device performance. Furthermore, thermal annealing of p-type layers should be avoided entirely. We therefore propose an adapted processing sequence, leading to a substantial improvement in efficiency to 16.7%, well above the efficiency of 15.8% obtained with the ‘standard’ processing sequence.     

Effect of vacuum annealing on charge transport and trapping in a-Si1 − xCx:H/c-Si heterostructures

The processes of charge transport and trapping in amorphous Si_1 ? xC_x:H films deposited on crystalline p-type Si wafers and annealed in vacuum in the temperature range 300–650 °C have been evaluated. Current–voltage (I–V), capacitance–voltage (C–V) and admittance–temperature (G–T) characteristics were measured in the temperature range 100–350 K. The spectrum of thermal effusion of hydrogen was measured from room temperature up to 1000 °C.C–V characteristics indicate a slight increase of the dielectric constant k and a large hysteresis after annealing at 450 °C. The hysteresis is believed to be associated with mobile hydrogen effusion from the a-SiC:H film, and it is not seen after a 650 °C anneal. From I–V data the maximum rectification ratio is observed after annealing at 450 °C. Variable-range hopping (VRH) conduction at the Fermi level is found to dominate the forward current of the as-deposited structure. After annealing at 450 °C the forward current can be described by space-charge limited (SCL) mechanisms with trapping at shallow levels with energy of about 0.12 eV. After annealing at 650 °C the process of VRH conduction appears again, but the density of hopping sites is much higher than in the as-grown sample. From admittance spectra, the energy position of respective traps in a-SiC:H is at (E_V + 0.45) eV for as-deposited material and it decreases slightly after vacuum annealing. On the basis of these results, an energy band diagram of the a-Si_1 ? xC_x:H/p-Si structure annealed at 450 °C is proposed.