The annealing effect on structural,optical and photoelectrical properties of CuInS2/In2S3 films

Successive Ionic Layer Adsorption and Reaction (SILAR) technique was used to deposit the CuInS₂/In₂S₃ multilayer thin film structure at room temperature. The as-deposited film was annealed at 100, 200, 300, 400 and 500 °C for 30 min in nitrogen atmosphere and the annealing effect on structural, optical and photoelectrical properties of the film was investigated. X-ray diffraction (XRD) and optical absorption spectroscopy were used for structural and optical studies. Current–Voltage (I–V) measurements were performed in dark environment and under 15, 30 and 50 mW/cm² light intensity to investigate the photosensitivity of the structure. Also, the electrical resistivity of the film was determined in the temperature range of 300–470 K. It was found that annealing temperature drastically affects the structural, optical and photoelectrical properties of the CuInS₂/In₂S₃ films.     

The growth and field evaporation of Er and deuterated Er films

The morphological structure of clean and deuterated Er films deposited on W substrates and their removal by field evaporation have been investigated as part of a program directed toward the development of deuterium ion sources for neutron generators. Annealed Er films up to ~ 20 monolayers in thickness deposited on W < 110 > substrates appear pseudomorphic. Thicker annealed films form a hexagonal close-packed < 0001 > orientated over-layer with the Pitsch–Schrader orientation relation. The pseudomorphic and hexagonal close-packed character of the films is retained up to the last atomic layer that forms the film-substrate interface. Deuterated Er films appear polycrystalline. At 77 K in Ar, annealed Er films field evaporate at 2.5 V/Å primarily as Er^2 + and deuterated Er films evaporate at ~ 2.4 V/Å primarily as ErD_x^2 +. Field evaporation of both clean and deuterated Er films shows signs of space charge induced field lowering when film thicknesses exceeding ~ 10 layers were field evaporated using 20 ns duration voltage pulses.     

Extraordinary fast oxide ion conductivity in La1.61GeO5−δ thin film consisting of nano-size grain

Thin films of La_1.61GeO_5−δ, a new oxide ionic conductor, were fabricated on dense polycrystalline Al₂O₃ substrates by a pulsed laser deposition (PLD) method and the effect of the film thickness on the oxide ionic conductivity was investigated on the nanoscale. The deposition parameters were optimized to obtain La_1.61GeO_5−δ thin films with stoichiometric composition. Annealing was found necessary to get crystalline La_1.61GeO_5−δ thin films. It was also found that the annealed La_1.61GeO_5−δ film exhibited extraordinarily high oxide ionic conductivity. Due to the nano-size effects, the oxide ion conductivity of La_1.61GeO_5−δ thin films increased with the decreasing thickness as compared to that in bulk La_1.61GeO_5−δ. In particular, the improvement in conductivity of the film at low temperature was significant .The electrical conductivity of the La_1.61GeO_5−δ film with a thickness of 373 nm is as high as 0.05 S cm^− 1 (log(σ/S cm^− 1) = − 1.3) at 573 K.     

Effect of GZO thickness and annealing temperature on the structural,electrical and optical properties of GZO/Ag/GZO sandwich films

The GZO/Ag/GZO sandwich films were deposited on glass substrates by RF magnetron sputtering of Ga-doped ZnO (GZO) and ion-beam sputtering of Ag at room temperature. The effect of GZO thickness and annealing temperature on the structural, electrical and optical properties of these sandwich films was investigated. The microstructures of the films were studied by X-ray diffraction (XRD). X-ray diffraction measurements indicate that the GZO layers in the sandwich films are polycrystalline with the ZnO hexagonal structure and have a preferred orientation with the c-axis perpendicular to the substrates. For the sandwich film with upper and under GZO thickness of 40 and 30 nm, respectively, it owns the maximum figure of merit of 5.3 × 10⁻² Ω⁻¹ with a resistivity of 5.6 × 10⁻⁵ Ω cm and an average transmittance of 90.7%. The electrical property of the sandwich films is improved by post annealing in vacuum. Comparing with the as-deposited sandwich film, the film annealed in vacuum has a remarkable 42.8% decrease in resistivity. The sandwich film annealed at the temperature of 350 °C in vacuum shows a sheet resistance of 5 Ω/sq and a transmittance of 92.7%, and the figure of merit achieved is 9.3 × 10⁻² Ω⁻¹.     

Effect of annealing on structure and optical properties of Ga5Se95 films

To investigate the effect of annealing on the structural and optical properties of a binary compound Ga₅Se₉₅, thin films of Ga₅Se₉₅ have been deposited on quartz substrates at room temperature by the thermal evaporation technique. X-ray diffraction patterns showed that the films before and after annealing at 573 K have polycrystalline texture and exhibit tetragonal structure. The dependences of the optical constants, the refractive index n and extinction coefficient k were studied in the spectral range of 200 nm to 2500 nm. The normal dispersion of the refractive index of the films could be described using the Wemple–DiDomenco single-oscillator model. Analysis of absorption index data reveals that as-deposited Ga₅Se₉₅ films has indirect transitions with optical energy gap of 1.685 eV.     

Infrared spectroscopy of superionic conductor LiNaSO4: Vibrational modes and thermodynamics

Infrared active phonon spectra of lithium sodium sulphate, LiNaSO₄, were studied at temperatures between 20 K and 780 K. Dielectric constant [ε = ε′ + iε″] and energy loss function [− Im(1/ε)] were obtained from Kramers–Kronig analysis. Our IR data show a more complete set of vibrational modes than previous investigations. The IR data of LiNaSO₄ at 20 K are consistent with the P31c symmetry, indicating that LiNaSO₄ shows no structural phase transitions between 20 K and 300 K, in contrast to LiKSO₄. On heating from 20 K, phonon modes related to Li and Na vibrations show a dramatic line broadening and decrease in intensity. An extra mode is recorded near 380 cm^− 1 at 500 K. The absorption shows a systematic increase in intensity on further heating. These changes are attributed to anharmonic effects and Li diffusion or hopping. Dramatic spectral changes in the internal modes occur near 620 K on heating, suggesting the onset of the rotational disorder of SO₄ tetrahedra, but the Li atom spectrum shows weak response to the rotational disorder.     

Schottky-type polycrystalline CdZnTe X-ray detectors

The polycrystalline CdZnTe:Cl thick films which have high resistivity about 5 × 10⁹ Ω cm are grown by thermal evaporation method. The leakage currents of as-deposited CdZnTe layers are still too high to operate as medical applications. The blocking layer of Schottky type was formed on the stoichiometric surface of polycrystalline CdZnTe layers to suppress the leakage current of polycrystalline CdZnTe X-ray detectors. The polycrystalline CdZnTe Schottky barrier diodes with indium contact exhibit the low leakage current (14 nA/cm²) at 40 V due to its high barrier height (ϕ_b = 0.80 eV). In X-ray image acquisition with Schottky-type linear array polycrystalline CdZnTe X-ray detector, we have obtained the promising results and proved the possibility of polycrystalline CdZnTe for applications as a flat panel X-ray detector.     

Superconducting characteristics and microstructure of polycrystalline Zn-doped In2O3 films

In order to investigate the relation among the superconducting transition T_c, carrier density n, resistivity ρ and the microstructure in the polycrystalline (In₂O₃)_1?x–(ZnO)_x films, we prepared specimen films by post annealing of amorphous films with x = 0.025 at various annealing temperature T_a and for annealing time t_a = 1 h and 4 h. As for microstructures, we have investigated the distribution of elements by scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). We have found followings: (1) The annealed films clearly show the superconductivity of which T_c depends on T_a, t_a and n. This indicates that the superconductivity is determined by the combination of crystallinity and carrier density. (2) The data on STEM–EELS spectra mapping of indium plasmon indicate that droplets of the pure indium phase exist inside a film, where the distribution of these droplets dispersed. Therefore, it seems that droplets do not form an electrical conducting path, that is, it is possible that observed superconductivity is due to intrinsic characteristic of polycrystalline (In₂O₃)_1?x–(ZnO)_x films.     

Carrier transport properties in high resistivity polycrystalline CdZnTe material

The electrical properties of polycrystalline CdZnTe (Zn = 4%) having high resistivity (3.3 × 10⁹ Ω cm) were investigated by using the time-of-flight technique. We have found that the average drift mobility of as-deposited polycrystalline CdZnTe samples is 1.21 cm²/V s and the electron trapping time is 4.6 μs. In a comparison of annealed samples at different conditions, the variation of resistivity in polycrystalline CdZnTe is considered to be mainly related to the fluctuation of carrier concentration, which originates from the change of density in deep level.     

Properties of thin manganite films grown on semiconducting substrates for spintronics applications

La_0.7Sr_0.3MnO₃ (LSMO) manganite thin films were grown by pulsed plasma deposition on silicon (Si) and gallium arsenide (GaAs) substrates covered by an amorphous oxide. Manganite films are characterized by polycrystalline structure. Ferromagnetic transition is above room temperature and for 50 nm thick film the Curie temperature was as high as 325 K and 305 K for LSMO/SiO_x/Si and LSMO/AlO_x/GaAs, respectively.     

Titanium oxide thin layers deposed by dip-coating method: Their optical and structural properties

TiO₂ thin films were prepared by sol-gel method. The structural investigations performed by means of X-ray diffraction (XRD) technique and scanning electron microscopy (SEM) showed the shape structure at T = 600 °C. The optical constants of the deposited film were obtained from the analysis of the experimentally recorded transmittance spectral data in the wavelength of 200–3000 nm range. The values of some important parameters of the studied films are determined, such as refractive index n and thickness d. In this work, using the transmission spectra, we have calculated the dielectric constant (ε_∞) for four layered TiO₂ films; a simple relation is suggested to estimate the third-order optical nonlinear susceptibility χ⁽³⁾. It has been found that the dispersion data obeyed the single oscillator of the Wemple–DiDomenico model, from which the dispersion parameters and high-frequency dielectric constant were determined. The estimations of the corresponding band gap E_g, χ⁽³⁾ and ε_∞ are 2.57 eV, 0.021 · 10⁻¹⁰ esu and 5.20, respectively.     

Anomalous high salt conductivity in primary diamines as solvents

It is shown that the conductivities of LiBF₄, LiPF₆, LiN(SO₂CF₃)₂ (LiTFSI), NaPF₆, KPF are abnormally high in two diamine solvents: ethylenediamine (EDA) and 1,3-diaminopropane (1,3 DAP). This is particularly evident for KPF₆, κ_MAX(EDA) = 35 mS cm^− 1 and κ_MAX(1,3 DAP) = 17.4 mS cm^− 1. Compared to three other organic solvents having the same viscosity, η ≅ 1.6 cP, but higher relative permittivity, NMF ε = 186.9, NMP ε = 32, γ-Bu ε = 39.1, the maxima of conductibility of EDA and 1,2 DAP, which have a low relative permittivity, ε ≅ 13–11, are largely superior or equal to those of NMF, NMP, γ-Bu. For KPF₆, κ_MAX(NMF) = 15.4mS cm^− 1, κ_MAX(NMP) = 7.8 mS cm^− 1 and κ_MAX(γ-BL) = 10.8 mS cm^− 1. We assume that this is due to a non-Stokesian conductivity mechanism.     

The effect of copper concentration on structural,optical and dielectric properties of CuxZn1 − xS thin films

Cu_xZn_1 ? xS (x = 0, 0.25, 0.50, 0.75, 1) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The copper concentration (x) effect on the structural, morphological and optical properties of Cu_xZn_1 ? xS thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing copper concentration. The energy bandgap values were changed from 2.07 to 3.67 eV depending on the copper concentration. The refractive index (n), optical static and high frequency dielectric constants (ε_o, ε_∞) values were calculated by using the energy bandgap values as a function of the copper concentration.     

Magnetic properties of nanocrystalline Fe86.7Zr3.3B4Ag6 thin film

The changes of magnetic properties with annealing temperature were studied in the amorphous Fe_86.7Zr_3.3B₄Ag₆ thin film. The thin films were deposited by a DC magnetron sputtering method, annealed at 300–700°C for 1 h in vacuum under a field of 1.5 kOe parallel to the film plane, and then furnace-cooled. As a result, it has been found that the Ag addition to Fe–Zr–B amorphous thin films resulted in the decrease of crystallization temperature to 400°C due to promoted crystallization ability. Also, it gave rise to formation of fine BCC α-Fe crystalline precipitates with a grain size smaller than 10 nm in the amorphous matrix near 400°C, and led to prominent enhancement in the magnetic properties of the Fe_86.7Zr_3.3B₄Ag₆ thin films. Significantly, excellent magnetic properties such as a saturation magnetization of 1.7 T, a coercive force of 1 Oe and a permeability of 7800 at 50 MHz were obtained in the amorphous Fe_86.7Zr_3.3B₄Ag₆ thin film containing 7.2 nm-size BCC α-Fe, which was annealed at 400°C. Also, core loss of 1.4 W cm⁻³ (B_m=0.1 T) at 1 MHz in the thin film was obtained, and it is a much lower value than had been obtained in any existing soft magnetic materials. Such excellent properties are inferred to originate from the uniform dispersion of nano-size BCC α-Fe in the amorphous matrix.     

Nuclear quadrupole interaction at 181Ta in hafnium dioxide fiber: Time differential perturbed angular correlation measurements and ab initio calculations

The thermal behavior of hafnium dioxide fiber has been investigated with the aid of time differential perturbed angular correlation (TDPAC) technique along with XRD and SEM measurements. This study has proved a good thermal stability of the fibrous material up to 1173 K and the fiber loses its crystallinity to a meager extent at 1673 K. No phase transition has been observed up to 1673 K in this fiber. TDPAC parameters for the HfO₂ fiber annealed at 1173 K are ω_Q=124.6 (3) Mrad/s and η=0.36 (1). These values remain unaltered for the HfO₂ fiber annealed even at 1673 K. Electronic structure calculations based on the density functional theory (DFT) for HfO₂ doped with tantalum impurity have been performed and the calculated EFG parameters are in reasonable agreement with the experimental values.     

Temperature coefficient of resistance and thermal conductivity of Vanadium oxide ‘Big Mac’ sandwich structure

In this paper, we synthesize and characterize a thin film thermometer structure for infrared microbolometers. The structure is composed of alternating multilayers of Vanadium pentoxide (V₂O₅), 25 nm, and Vanadium (V), 5 nm, thin films deposited by rf magnetron and dc magnetron sputtering respectively and annealed for 20, 30 and 40 min at 300 °C in Nitrogen (N₂) atmosphere. The best achieved temperature coefficient of resistance (TCR) was found to be −2.57%/K for 40 min annealed samples. Moreover, we apply, for the first time, the photo-thermal deflection (PTD) technique for measuring the thermal conductivity of the synthesized thin films. The thermal conductivity of the developed thin films reveals an increase in thermal conductivity from 2 W/m K to 5.8 W/m K for as grown and 40 min annealed samples respectively.     

Inclusion of polyaniline in electrodeposited bismuth sulphide thin films: Synthesis and characterization

Structural, electrical and optical properties of polyaniline (PAni) doped Bi₂S₃ composite thin films prepared by electrodeposition method are reported. X-ray diffraction pattern indicates its polycrystalline nature and crystallite size increases with increase in the concentration of PAni. FTIR studies reveal that the dopant PAni has affected the absorption phenomenon in the IR region of the Bi₂S₃ thin films. The optical band gap energy is found to be 1.91 eV for as-deposited Bi₂S₃ thin film and it decreases with increase in the concentration of PAni. The morphology of the doped films changes due to the addition of PAni. Electrical studies indicate that the conductivity increases with increase in the concentration of PAni. The conduction results from a hopping due to localized states in the temperature range 300–358 K. Above 358 K, the conduction process is explained by the traps at grain boundaries of partially depleted grains.     

Structural and magnetic properties of the double perovskite Sr2MnWO6

The nuclear and magnetic structure and the magnetic properties of the polycrystalline double perovskite Sr₂MnWO₆ have been studied. Rietveld analysis of neutron powder diffraction (NPD) data at T=295 K shows that the sample is tetragonal (space group P4₂/n, a=8.0119(4) Å, c=8.0141(8) Å). Some additional magnetic diffraction peaks were found in the NPD pattern at 10 K, which can be accounted for by antiferromagnetic ordering of spins at the Mn sites. The magnetic unit cell is doubled in all three unit axes directions (a=b=15.9984(8) Å, c=16.012(2) Å) and the manganese moments are coupled antiferromagnetically along the unit cell axes. The total magnetic moment of Mn²⁺ is found to be 2.27(7) μ_B. The antiferromagnetic behaviour was confirmed from magnetisation measurements. The transition from a paramagnetic to an antiferromagnetic state takes place at 13.0±0.1 K.     

Dielectric response of Cu0.5Tl0.5Ba2(Ca2−yMgy)(Cu0.5Zn2.5)O10−δ bulk superconductor to frequency and temperature

The dielectric properties of Cu_0.5Tl_0.5Ba₂Ca_2?yMg_yCu_0.5Zn_2.5O_10?δ (y = 0, 0.5, 1.0, 1.5) superconductor samples were studied at 79 and 290 K by means of capacitance (C) and conductance (G) measurements with the test frequency (f) in the range of 10 KHz to 10 MHz. A negative capacitance (NC) phenomenon has been observed, which is most likely arising due to higher Fermi level of ceramic superconductor samples than metal electrodes. Also the NC may be due to the space charge located at the multiple insulator–superconductor interfaces (grain boundaries) in the materials. The negative dielectric constant (ε′) and loss factor (tan δ) show strong dispersion at low frequencies. The lower thermal agitation at 79 K may enhance the polarizability and hence the dielectric constants (ε′ and ε″).     

Oxidation of ultra-thin Ti films on Mo(100): Soft X-ray photoelectron spectroscopy study

Titanium oxide films grown on Mo(100) have been investigated by low-energy electron diffraction (LEED) and soft X-ray photoelectron spectroscopy (PES). The film was grown by Ti deposition on Mo(100) and subsequent oxidation of the film by 12 L of O₂ exposure at room temperature. As the film was annealed at 700–1000 °C, the film in which the Ti atoms were in a Ti³⁺ oxidation state was formed. As the film was annealed at 1100–1500 °C, the oxidation state of Ti in the film was converted to Ti²⁺. The valence electronic structure of the film was measured under the condition that the emission from the Mo substrate was minimized due to a Cooper minimum of the Mo 4 d photoionization cross sections (hν = 100 eV). It was found that the Ti 3 d band in normal-emission spectra was increased in intensity when the film was annealed at 1100–1500 °C. As the film was annealed at 1300 °C for 10 s and 20 s, the film-covered Mo(100) gave (2 × 2) and (4 × 1) LEED patterns, respectively. The two-dimensional band structure of the (2 × 2) system was investigated by angle-resolved PES, and it was found that the film with a (1 × 1) periodicity with respect to the Mo(100) substrate existed in the (2 × 2) system.