A novel method to improve detecting sensitivity of quadrant detector

This paper presents a set of formulae for estimating the light spot position projected on a quadrant detector (QD). A novel method of annular segmentation calculus (ASC) is designed to analyze the detecting light spot of QD. The influences of the spot movement mode, spot energy distribution, and dead area to the dynamic range and the detection sensitivity are analyzed. It is shown in simulations that our new formulae have achieved a much better results to increase measurement accuracy. It is also shown that on the condition of the same spot size, the detection sensitivity of Gaussian distribution is prior to uniform distribution. The detection sensitivity of diagonal mode is better than cross mode. The detection sensitivity increases with increase in the size ratio of dead area to spot. The simulating and experimental results show that the measuring range of QD is 400 μm, and the resolution is 50 μm. The study presented here will be beneficial in developing the nanomechanical displacement detection techniques.     

Fabrication and characterization of a vertical pillar structure including a self-assembled quantum dot and a quantum well

We fabricate and characterize a novel vertical pillar structure including a self-assembled InAs quantum dot (QD) and an InGaAs quantum well (QW). The vertical current through both the InAs QD and an electrostatically defined QD made in the InGaAs QW can be measured by adjusting the position of the InGaAs QD in the QW plane relative to the InAs QD with two side-gate voltages applied independently. We study optical response of the current through the vertical double QD by irradiating light, which is assumed to be mainly absorbed in the InAs QDs. We successfully probe a time-dependent energy level shift due to the Coulomb interaction from holes trapped in the vicinity of the pillar.     

Cooling effect of thermal bias on a current-carrying nanodevice

We investigate the heat generation in a quantum dot (QD) coupled to two normal leads with different temperatures. It is found that heat in the QD can be conducted efficiently away through electron–phonon interaction in the QD when the QD is coupled stronger to colder lead than to the hotter one. As temperature of the colder lead is close to zero, the current through the QD peaks at the very QD level position, where the heat generation is zero, which helps to keep the stability of a working nanodevice. Then an ideal condition for nanodevice operation can be found.     

Optical properties of an off-center hydrogenic impurity in a spherical quantum dot with Gaussian potential

Optical absorption coefficients and refractive index changes associated with intersubband transition of an off-center hydrogenic impurity in a spherical quantum dot (QD) with Gaussian confinement potential are theoretically investigated. Our results show that the optical absorption coefficients in a spherical QD are 2–3 orders of magnitude higher than those in quantum wells and are 2–3 orders smaller than those in a disk-like QD. It is found that the optical absorptions and the optical refractive index are strongly affected not only by the confinement barrier height, dot radius but also by the position of the impurity.     

合肥光源200MeV直线加速器束流位置检测器的计算

 采用Oprea程序对合肥光源200MeV直线加速器束流位置检测器(BPM)的电磁场进行了计算，由2 D的静电场来模拟计算BPM的特性阻抗和耦合系数，采用2 D的静磁场来模拟计算其位置灵敏线性曲线。由此，进行了直线加速器束流位置检测器的优化设计，得到了4个60°电极的位置检测器。它具有非常好的线性，在位置上具有足够大的信号强度，并且较好地满足了直线加速器的几何与机械要求。     

应变纤锌矿GaN/AlxGa1-xN柱形量子点中类氢施主杂质态结合能的压力效应

考虑应变,在有效质量、有限高势垒近似下,变分研究了纤锌矿GaN/AlxGa1-xN柱形量子点中类氢施主杂质态结合能随流体静压力、杂质位置及量子点结构参数(量子点高度、半径、Al含量)的变化关系．结果表明,类氢施主杂质态结合能随流体静压力增大而增大,且在量子点尺寸较小时,流体静压力对杂质态结合能的影响更为显著．受流体静压力的影响,杂质态结合能随量子点高度、半径的增加而单调减少,且变化趋势加剧;随Al含量增加而增大的趋势变缓．无论是否施加流体静压力,随着类氢施主杂质从量子点左界面沿材料生长方向移至右界面,杂质态结合能在量子点的右半部分存在一极大值．流体静压力使得极大值点向量子点中心偏移．     

纤锌矿GaN柱形量子点中类氢施主杂质态

在有效质量近似和变分原理的基础上,选取含两个变分参数的波函数,研究了纤锌矿结构的GaN/AlxGa1-xN单量子点中类氢施主杂质体系的结合能随量子点(QD)尺寸以及杂质在量子点中位置的变化,并与以前使用不同尝试波函数的计算结果进行了比较。结果表明:由我们选取的两变分参数波函数得到的结果与前人选取的两变分参数波函数得到的结果相比有所改进,而与选取一个变分参数波函数得到的结果一致。同时我们还计算了体系的维里定理值随量子点半径的变化情况,所得结果与前人工作结果一致,说明本文选取的两变分参数波函数能很好地描述柱形量子点中施主杂质态的运动。     

一种带有弹簧的丝型同步光位置检测器

 介绍了合肥光源机器诊断光束线上具有弹簧系统的丝型光位置检测器，经过标定该检测器的线性范围大于4 mm，灵敏度约为0.197 9 mm^-1。通过不同束流流强下同步光垂直尺寸的测量，发现束流流强对同步光垂直尺寸的影响不大，不需要对灵敏度进行修正。进行了无氧铜板施加正偏压的测量，在施加正偏压时能够提高线性范围和略改善信噪比。     

闪锌矿GaN量子点中类氢杂质态的束缚能

在有效质量近似下,用变分法研究了闪锌矿GaN/AlxGa1-xN单量子点中的类氢杂质态。结果表明量子点中的杂质位置和量子点结构参数（量子点高度H、半径R及Al含量x）对施主束缚能有很大的影响。当杂质位于量子点中心时,施主束缚能 有最大值。此外,施主束缚能 随着量子点高度H（半径 ）的增大而减小,随着量子点中Al含量x的增大而增大。     

External Electric Field Effect on Hydrogenic Donor Impurity in Zinc-Blende InGaN Quantum Dot

The binding energy of a hydrogenic donor impurity in zinc-blende (ZB) InGaN quantum dot (QD) is calculated in the framework of effective-mass envelope-function theory using the plane wave basis. It is shown that the donor binding energy is highly dependent on the impurity position, QD size and the external electric field. The symmetry of the electron probability distribution is broken and the maximum of the donor binding energy is shifted from the centre of QD in the presence of the external electric field. The degenerating energy levels for symmetrical positions with respect to the centre of QD are split. The splitting increases with the increase of QD height while the splitting increases up to a maximum value and then decreases with the increase of QD radius.     

The donor bound exciton states in wurtzite GaN quantum dot

Based on the effective mass approximation, the donor bound exciton states in a wurtzite (WZ) GaN/AlGaN quantum dot (QD) are investigated by means of a variational method, including the strong built-in electric field effect due to the spontaneous and piezoelectric polarizations. Numerical results show that the donor bound exciton binding energy is highly dependent on the impurity position and QD size. In particular, we find that the donor bound exciton binding energy is insensitive to dot height when the impurity is located at the right boundary of the WZ GaN/AlGaN QD with large dot height.     

Surface-plasmon-assisted electromagnetic field enhancement in semiconductor quantum dots

The temporal development of incident electromagnetic plane waves across semiconductor quantum dots (QDs) is analyzed by the finite-difference time-domain method. By coating the QDs using thin metal films, surface plasmon polaritons (SPPs) can be created. As illustration, our modeling approach is applied to fluorescent multiphoton quantum dots made of cadmium sulphide of particular size (3.7 nm) and energy band gap (2.67 eV). When such a QD is coated by a metal film, a dipole-formed SPP is generated at the external surface of the coated QD by the incident electromagnetic wave with a photon energy of 1.34 eV corresponding to a two-photon process. When the thickness of the metal film is 0.37 nm, the peak intensity of the SPP oscillates through both the thin metal film and the core QD, resulting in an electromagnetic field inside the QD enhanced by a factor of 10, and thus an increased two-photon excitation that can be useful for bioimaging applications. Further increasing the metal film thickness blockades the SPP initially generated at the external surface of the coated QD from penetrating through the metal film, reducing the electromagnetic field inside the QD. PACS 73.22.-f; 78.67.Hc     

Ionized Acceptor Bound Exciton States in Wurtzite GaN/Al_xGa(1-x)N Cylindrical Quantum Dot

Based on the framework of the effective-mass approximation,the ionized acceptor bound exciton(A-,X) binding energy and the emission wavelength are investigated for a cylindrical wurtzite(WZ) GaN/Al x Ga1-x N quantum dot(QD) with finite potential barriers by means of a variational method.Numerical results show that the binding energy and the emission wavelength highly depend on the QD size,the position of the ionized acceptor and the Al composition x of the barrier material Al x Ga1-x N.The binding energy and the emission wavelength are larger when the acceptor is located in the vicinity of the left interface of the QD.In particular,the binding energy of(A-,X) complex is insensitive to the dot height when the acceptor is located at the left boundary of the QD.The ionized acceptor bound exciton binding energy and the emission wavelength are both increased if Al composition x is increased.     

基于AD698的线性差动式位移传感器解码电路设计

线性差动式位移传感器(LVDT)由于其灵敏度高、线性度好、分辨率高、寿命长、可靠性高等优点,已广泛应用于机载测试系统中;为了设计出精度高,稳定性好,能够满足机载测试需求的LVDT传感器解码电路,分析了LVDT传感器磁芯位移与输出电压信号的关系,研究了AD698的内部解调原理,设计出了基于AD698的信号解码电路;该电路通过外围元器件产生传感器所需的激励信号,并对激励信号和传感器输出信号进行解调得到与传感器磁芯位移成正比的直流电压;最后通过实验验证该电路具有结构简单、稳定性高、精度高的优点,能够满足机载测试的要求,且该电路已经过高低温和振动试验,并成功应用于机载测试采集系统中。     

Surpassing the standard quantum limit for optical imaging using nonclassical multimode light

Using continuous wave superposition of spatial modes, we demonstrate experimentally displacement measurement of a light beam below the standard quantum limit. Multimode squeezed light is obtained by mixing a vacuum squeezed beam and a coherent beam that are spatially orthogonal. Although the resultant beam is not squeezed, it is shown to have strong internal spatial correlations. We show that the position of such a light beam can be measured using a split detector with an increased precision compared to a classical beam. This method can be used to improve the sensitivity of small displacement measurements.     

Quantum Dots Luminescence Collection Enhancement and Nanoscopy by Dielectric Microspheres

In recent years, dielectric microspheres have been used in conjunction with optical microscopes to beat the diffraction limit and to obtain superresolution imaging. The use of microspheres on quantum dots (QDs) is investigated, for the first time, to enhance the light coupling efficiency. The enhancement of the QD luminescence collection in terms of extraction and directionality is demonstrated, as well as the enhancement of spatial resolution. In particular, it is found that a dielectric microsphere, placed on top of an epitaxial QD, increases the collected radiant energy by about a factor of 42, when a low numerical aperture objective is used. Moreover, if two or more QDs are present below the microsphere, the modification of the far field emission pattern allows selective collection of the luminescence from a single QD by simply changing the collection angle. Dielectric microspheres present a simple and efficient tool to improve the QD spectroscopy, and potentially QD-based devices.     

Detection of single photons by a resonant tunneling heterostructure with a quantum dot layer

Light absorption by GaAs/AlAs heterostructures with a layer of self-assembled InAs quantum dots (QDs) at resonant tunneling through an energy-selected QD has been investigated. A high sensitivity of the current through this selected tunneling channel to the absorption of single photons with a wavelength λ ≲ 860 nm up to a temperature of 50 K is demonstrated; this sensitivity is caused by the Coulomb effect of the photoexcited holes captured by surrounding QDs on the resonance conditions. It is shown that single-photon absorption can discretely change the current through the system under study by a factor of more than 50. The captured-hole lifetimes have been measured, and a model has been developed to qualitatively describe the experimental data. It is also demonstrated that the InAs monolayer can effectively absorb photons. The properties of the heterostructure studied can be used not only to detect photons but also to design logical valves and optical memory devices.     

Discrepancy between photoluminescence and photoresponse intensities in n-InAs/GaAs and InAs/n-GaAs quantum-dot heterostructures

We report a discrepancy between near-infrared photoluminescence (PL) and far-infrared photoresponse (PR) efficiencies in self-assembled InAs/GaAs quantum-dot (QD) heterostructures with silicon doping in either InAs QDs or GaAs barriers. The structure with n-GaAs barriers reveals a much higher PR intensity in spite of a weaker PL intensity in comparison with n-InAs QD structure. This discrepancy is explained by differences in the electron occupation of QD sublevel associated with the Fermi-level position and in the mean free path of photogenerated carriers in GaAs barriers due to impurity scattering.     

Pressure effects on the donor binding energy in zinc-blende InGaN/GaN quantum dot

Based on the effective-mass approximation, the hydrostatic pressure effects on the donor binding energy of the hydrogenic impurity in zinc-blende (ZB) InGaN/GaN quantum dot (QD) are investigated by means of a variational procedure. Numerical results show that the donor binding energy increases when the hydrostatic pressure increases for any impurity position and QD structure parameter. Moreover, it is found that the hydrostatic pressure has a remarkable influence on the donor binding energy of the hydrogenic impurity located at the vicinity of dot center in ZB InGaN/GaN QD.     

Hydrostatic pressure effects on impurity states in InAs/GaAs quantum dot

Within the framework of effective-mass approximation, the hydrostatic pressure effects on the donor binding energy of a hydrogenic impurity in InAs/GaAs self-assembled quantum dot(QD) are investigated by means of a variational method. Numerical results show that the donor binding energy increases when the hydrostatic pressure increases for any impurity position and QD size. Moreover, the hydrostatic pressure has a remarkable influence on the donor binding energy for small QD. Realistic cases, including the impurity in the QD and the surrounding barrier, are considered.