Nonlinear simulation of multiple toroidal Alfvén eigenmodes in tokamak plasmas

Nonlinear evolution of multiple toroidal Alfven eigenmodes(TAEs) driven by fast ions is self-consistently investigated by kinetic simulations in toroidal plasmas.To clearly identify the effect of nonlinear coupling on the beam ion loss,simulations over single-n modes are also carried out and compared with those over multiple-n modes,and the wave-particle resonance and particle trajectory of lost ions in phase space are analyzed in detail.It is found that in the multiple-n case,the resonance overlap occurs so that the fast ion loss level is rather higher than the sum loss level that represents the summation of loss over all single-n modes in the single-n case.Moreover,increasing fast ion beta β_h can not only significantly increase the loss level in the multiple-n case but also significantly increase the loss level increment between the single-n and multiple-n cases.For example,the loss level in the multiple-n case for β_h=6.0% can even reach 13% of the beam ions and is 44% higher than the sum loss level calculated from all individual single-n modes in the single-n case.On the other hand,when the closely spaced resonance overlap occurs in the multiple-n case,the release of mode energy is increased so that the widely spaced resonances can also take place.In addition,phase space characterization is obtained in both single-n and multiple-n cases.     

The frequency resolution of acousto-optical spectrometer

this paper discusses the frequency resolution of an acousto-opticalspectrometer system under influences of deflector‘s spectral resolution,coherent light-beam truncation ratio,and photodiode array‘s response.Thebroadening of the resoluble line-pattern caused by the response of aphotodiode pixel has been computed.According to this discussion theauthors proposed the selecting principles for the design parameters of theacoustooptical spectrometer including light-beam truncation ratio,focallength of Fourier lens,and number of photodiode array elements,i.e.thequantitative criteria for specific observational necessities with anacousto-optical spectrometer considered with resolution,bandwidth,andsidelobes of instrumental profile comprehensively.An experimentalmeasurement of the frequency resolution to verify the above theoreticalcomputations has also been carried out.     

Stability of tokamak plasmas with internal transport barriers against high n ideal magnetohydrodynamic ballooning mode

A ballooning mode equation for tokamak plasma, with the toroidicity and the Shafranov shift effects included, is derived for a shift circular flux tokamak configuration. Using this equation, the stability of the plasma configuration with an internal transport barrier （ITB） against the high n （the toroidal mode number） ideal magnetohydrodynamic （MHD） ballooning mode is analysed. It is shown that both the toroidicity and the Shaftanov shift effects are stabilizing. In the ITB region, these effects give rise to a low shear stable channel between the first and the second stability regions. Out of the ITB region towards the plasma edge, the stabilizing effect of the Shaftanov shift causes the unstable zone to be significantly narrowed.     

Near field acoustic solution of a rotating point source in frequency domain

I.IntroductionAerodyntalcnoiseofturbomaChinrynotoalythectstheenvironmentbutalsosometimesresultsinstructuredamage.Aeroacoustics,asaintewhsciPlineofacousticsandaerodynamics,isattractingmorandmoreatteDtionandresearch.TherearetwoimportalltcontentsonthenoiseproducingmechAnsmsinaeroacousticproblem.OneisaboutthesourcesofnoiseinturbomachinryGenetallytherearethreetyPesofsources:thickness,forceandturbulencestress,correspondingrespectivelyTomonopole,dipoleandquadruplesourcesThelatertwokindsofsourcesh…     

The high frequency magnetic properties of self assembled Fe–Co–Si–N nanogranular thin films

The effect of a variation in Si and N concentration on the microstructure, crystal structure and high-frequency magnetic properties of Fe–Co–Si–N nanogranular thin films was investigated. The films, prepared by rf magnetron sputtering, consisted of nanosized grains of FeCo as well as a Si and N rich intergranular amorphous phase. The Si concentration had a significant effect on the crystal structure of the FeCo phase. The resistivities of the Fe–Co–Si–N films were significantly enhanced by an increase in Si concentration. The resonant frequency of the Fe–Co–Si–N films could be tuned from 0.45 GHz to 2.1 GHz by controlling Si concentration. The N concentration greatly influenced magnetic properties and the variation in resonant frequency is in agreement with Kittel’s equation.     

The formation of V–Al–N thin films by reactive ion beam mixing of V/Al interfaces

The reactive ion beam mixing (IBM) of V/Al interfaces by low-energy N₂⁺ ions at room temperature leads to the formation of V–Al–N ternary nitride thin films. The kinetics, growth mechanisms, composition and electronic structure of those films have been studied using X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, Factor Analysis and Monte Carlo TRIDYN simulations. The comparison of experimental results with those obtained from TRIDYN simulations suggests that the chemical reaction with the nitrogen partial pressure and processes driven by residual defects are the rate-controlling mechanisms during the reactive IBM of V/Al interfaces. The kinetics of mixing is characterized by two stages. During the first stage (≤4×10¹⁶ ions/cm²), the formation of vanadium nitride is observed. In the second stage, vanadium nitride is transformed into a V–Al–N ternary nitride due to Al incorporation in the near surface region. Moreover, the V/Al ratio can be varied in a broad range, whereas the nitrogen concentration slightly decreases with increasing the aluminium content of the film.     

The effect of series resistance and interface states on the frequency dependent C–V and G/w–V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes

The capacitance–voltage–frequency (C–V–f) and conductance–voltage–frequency (G/w–V–f) characteristics of Al/perylene/p-Si Schottky barrier diodes (SBDs) fabricated with spin coating system have been investigated in the frequency range of 30 kHz–2 MHz at room temperature. In order to elucidate the electrical characteristics of SBDs with perylene interface, the voltage and frequency dependent series resistance (R_s), frequency dependent density distribution profile of interface state (N_ss) were obtained. The measurements of C and G/w were found to be strongly dependent on bias voltage and frequency for Al/perylene/p-Si SBDs. For each frequency, the R_s–V plot gives a peak, decreasing with increasing frequencies. Also, it has been shown that the interface states density exponentially decreases with increasing frequency. The C–V–f and G/w–V–f characteristics confirm that the N_ss and R_s of the diode are important parameters that strongly influence the electric parameters in metal/polymer/semiconductor (MPS) structure.     

Stability and instability properties of rotating Bose–Einstein condensates

We consider the mean-field dynamics of Bose–Einstein condensates in rotating harmonic traps and establish several stability and instability properties for the corresponding solution. We particularly emphasize the difference between the situation in which the trap is symmetric with respect to the rotation axis and the one where this is not the case.

     

Solitons and cnoidal waves of the Klein–Gordon–Zakharov equation in plasmas

This paper studies the Klein?CGordon?CZakharov equation with power-law nonlinearity. This is a coupled nonlinear evolution equation. The solutions for this equation are obtained by the travelling wave hypothesis method, (G??/G) method and the mapping method.     

Nonplanar ion-acoustic shocks in electron–positron–ion plasmas: Effect of superthermal electrons

Ion-acoustic shock waves (IASWs) in a homogeneous unmagnetized plasma, comprising superthermal electrons, positrons, and singly charged adiabatically hot positive ions are investigated via two-dimensional nonplanar Kadomstev–Petviashvili–Burgers (KPB) equation. It is found that the profiles of the nonlinear shock structures depend on the superthermality of electrons. The influence of other plasma parameters such as, ion kinematic viscosity and ion temperature, is discussed in the presence of superthermal electrons in nonplanar geometry. It is also seen that the IASWs propagating in cylindrical/spherical geometry with transverse perturbation will be deformed as time goes on.     

The effect of gradually constricted channel on the I–V characteristics of graphene sheets

Ideal graphene is a gapless semiconductor consisting of a single layer of carbon atoms regularly arranged in a honeycomb lattice having infinite spatial extent in the (x,y)-plane, in which electrons behave as Dirac massless fermions. Even neglecting interactions with the anchoring substrate, a graphene sheet in real world has finite extent, leading to distinctive features in the conductivity of a given sample. In this letter we study the effect of a gradual channel constriction in graphene nanoribbons on their I–V characteristics, using non-equilibrium Green's function formalism. The constriction width and the border cutting angle are the main parameters to be varied. We found that transmission through the channel is considerably affected by these parameters, presenting sharp peaks at specific energies, which can be attributed to a resonance due to the tuning of energy eigenvalues.     

The relationship between the transition voltage of the I–V curve of the ferroelectrics and the coercive field of the P–V hysteretic curve

The relationship between the transition voltage of the I–V curve of the ferroelectrics and the coercive field of the P–V hysteretic curve is calculated. The first mathematical analysis to explain the relation between the transition voltage V_t and the coercive voltage V_c is obtained. The origin of the interrelation between the transition voltage of the I–V curve and the coercive field is that the height of the boundary barrier is inversely proportional to the effective dielectric constant of the near-boundary region, which is dependent on a derivative of polarization on the electric field, ∂P/∂E. The term ξ(eV_t) plus the term (en_b²δ/dN_dP_s)(eV_c) equals a constant. V_t is the function of E_g, P_s, V_c, and E. There is a linear relation between V_c and V_t. This relationship will induce the matchable relations between the I–V curve and the E–P loop. As long as the V_c of the V–P loop exists, the correspondent V_t of I–V curve will certainly exist. It will be the foundation of a new ferroelectric memory, which operates by the I–V characteristics. These relations are the conditions that can enable nonvolatile memory and nondestructive readout.     

The rotation–vibration spectrum of diatomic molecules with the Tietz–Hua rotating oscillator and approximation scheme to the centrifugal term

The Tietz–Hua (TH) potential is one of the very best analytical model potentials for the vibrational energy of diatomic molecules. By using the Nikiforov–Uvarov method and Pekeris approximation to the centrifugal term, we have obtained the solutions of the radial Schrödinger equation for the TH potential. The energy eigenvalues and corresponding eigenfunctions are calculated in closed form. Some remarks and numerical results are also presented for some diatomic molecules.     

The Influence of Defect Structure on Oxidation Rate of V–Cr–W–Zr Alloy During Heat Treatment in Air

Russian Physics Journal - The results of an investigation of the influence of microstructure on the oxidation rate of an alloy of the V–Cr–W–Zr system investigated under the...     

P–V–T equation of state of rhodium oxyhydroxide

A high pressure X-ray diffraction study of RhOOH was carried out up to 17.44?GPa to investigate the compression behavior of an oxyhydroxide with an InOOH-related structure. A fit to the third-order Birch–Murnaghan equation of state gave K₀?=?208?±?6?GPa, and K′?=?9.4?±?1.3. The temperature derivative of the bulk modulus was found to be ?K/?T?=??0.06?±?0.02?GPa K^?1. The refined parameters for volume thermal expansion were α₀?=?2.7?±?0.3?×?10^?5 K^?1; α₁?=?1.7?±?1.1?×?10^?8 K^?2 in the polynomial form (α(T)?=?α_0?+?α₁(T?300)). Our results show that RhOOH is very incompressible, and has a higher bulk modulus than other InOOH-structured oxyhydroxides (e.g. δ-AlOOH, ε-FeOOH, and γ-MnOOH).