Faraday rotation measurement with photorefractive Bi12TiO20

A simple method for accurate measurement of Faraday rotation in materials with low rotation is developed using photorefractive Bi₁₂TiO₂₀. High optical activity of Bi₁₂TiO₂₀ is made use for this measurement. Detailed theoretical and experimental analysis is given.     

Bi2Te3拓扑绝缘体表面颗粒化铅膜诱导的超导邻近效应

拓扑绝缘体的出现为寻找拓扑超导体和Majorana费米子提供了一种可能的途径. 在拓扑绝缘体Bi₂Te₃表面沉积极薄的不连续铅膜, 试图通过邻近效应感应出大片的超导区, 为下一步研究拓扑超导电性创造条件.借助四引线电输运测量实验, 在0.25 K的低温下看到了超流现象, 表明沉积在Bi₂Te₃表面的厚度小于20 nm的颗粒化铅膜能够诱导邻近效应, 并且使大片Bi₂Te₃超导. 关键词： 超导邻近效应 S-N-S结 拓扑绝缘体     

Optical waveguide in Nd:Bi_(12)SiO_(20) crystal produced by multi-energy C ion implantation

We report the fabrication of a planar waveguide in the Nd:Bi_(12)SiO_(20) crystal by multi-energy C ions at room temperature. The waveguide is annealed at 200℃, 260℃, and 300℃ in succession each for 30 min in an open oven. The effective refractive index profiles at transverse electric(TE) polarization are stable after the annealing treatments. Damage distribution for multi-energy C ion implanted in Nd:Bi_(12)SiO_(20) crystal is calculated by SRIM 2010. The Raman and fluorescence spectra of the Nd:Bi_(12)SiO_(20) crystal are collected by an excitation beam at 633 nm and 473 nm, respectively. The results indicate the stabilization of the optical waveguide in Nd:Bi_(12)SiO_(20) crystal.     

Bi2S3/BiOCl复合光催化剂的水热合成及其高活性

采用一种简便的水热法在433 K的温度下成功合成了具有不同Bi₂S₃质量分数的Bi₂S₃/BiOCl复合光催化剂,利用各种技术对其进行了表征.在紫外光照射下,以甲基橙水溶液的光催化降解为模型反应,评价了Bi₂S₃/BiOCl复合光催化剂的活性.研究结果表明:与纯Bi₂S₃和纯BiOCl相比,Bi₂S₃/BiOCl样品明显具有更高的光催化性能,尤其当Bi₂S₃在Bi₂S₃/BiOCl中的质量分数为26.5%时,Bi₂S₃/BiOCl复合催化剂的光催化活性与商业P25(TiO₂)的活性非常接近,而这种商业P25在紫外光照射下是公认的高效光催化剂.这种明显提高的光催化活性主要归功于光生电子和空穴在Bi₂S₃和BiOCl形成异质结界面上的有效转移,降低了电子-空穴对的复合.     

Preparation, characterization and oxide ion conductivity in U-substituted Bi4V2O11

A Bi₂V_{1 − x − y}U_xBi_yO_{5.5 + 0.5x − y} solid solution derived from Bi₄V₂O₁₁ has been prepared and characterized with x up to 0.125 for y = 0. Partial substitution of U⁶⁺ for V⁵⁺ in Bi₄V₂O₁₁ leads to the stabilization at room temperature of the high-oxide ion conducting γ-phase, in contrast with other M⁶⁺ dopants which stabilize the β-phase. The lower conductivity in U substituted system compared with BICUVOX.10 is attributed to its higher activation energy. Conductivity values and activation energies of the U substituted phases compare well with Bi₂UO₆.     

“Running” holograms in photorefractive Bi12SiO20 crystals

It is shown that under uniform illumination and application of an external electric field, a phase volume hologram in a photorefractive crystal exists in the form of relaxing running wave. Effective recording of such a running hologram is possible only by an interference pattern moving synchronously with the recorded grating. The physical nature of this phenomenon, the possible enhancement of the hologram diffraction efficiency upon recording of a running pattern and the main factors limiting its value are discussed for the case of photorefractive Bi₁₂SiO₂₀ crystals.     

The role of Bi2O3 as a network modifier and a network former in xBi2O3 · (1 − x)LiBO2 glass system

The effect of Bi₂O₃ on the glass transition temperature, electrical conductivity and structure of LiBO₂ glass has been investigated. T_g vs. composition curve shows three different linear regions, while there is an overall decrease in T_g with the increase in Bi₂O₃ content. The slope of these three straight lines is in a decreasing order. These results are interpreted in terms of the increase in the number of non-bridging oxygen atoms, substitution of Bi-O bond in place of B-O bond and change in Li⁺ ion concentration. The conductivity vs. composition curve exhibits two maxima which are interpreted in terms of the structural modification effect of Bi₂O₃ on LiBO₂ network and mixed-former effect, respectively. Results obtained from the XPS studies of the samples of composition x 0.005, have shown that the number of non-bridging oxygen atoms from B-O bond increases with the increase in Bi₂O₃ content. It has a maximum value at x = 0.003 where the conductivity has also exhibited a maximum value. Further increase of Bi₂O₃ content causes decrease in it. For higher Bi₂O₃ content (x * > 0.005), O 1s spectra of Bi₂O₃ has been separated out from that of Bi₂O₃. Bismuth ions have been substituted for boron ions as network former ions.     

退火处理对W:Bi4Ge3O12和Bi12GeO20晶体发光性能的影响

通过提拉法制备了W:Bi4 Ge3 O12和Bi12GeO20晶体,测试了晶体的吸收光谱、光致发光谱和发光衰减时间等.W:Bi4 Ge3 O12的可见光发光强度比纯Bi4 Ge3 O12有所增强,而且N2中退火处理对W:Bi4Ge3O12发光有进一步增强作用.Bi12GeO20在N2中退火处理后在745 nm附近有发光...     

Structure and properties of Bi2Sr2CaCu2Ox/Bi2Sr2CuOx superlattices prepared by RF magnetron sputtering

We have prepared Bi₂Sr₂CaCu₂O_x/Bi₂Sr₂CuO_x (2212/2201) superlattices with various stacking periodicity by multitarget RF magnetron sputtering. Their crystal structure and electrical properties were investigated. The superlattice was found to be successfully constructed from the data of XRD patterns, AES, etc. The critical temperature increased almost linearly with increasing thickness of the 2212 phase up to a thickness of 6 unit cells. On the other hand, it did not decrease as the thickness of the 2201 layers was increased. The unit cell/unit cell superlattice showed T_{c zero} of 30 K.     

The a---b anisotropy in Bi2Sr2CaCu2O8 superconductor: An investigation by Raman spectroscopy

In the present paper, we report a study of the Raman active phonons of Bi₂Sr₂CaCu₂O₈ for frequencies extending down to 20 cm⁻¹ and temperatures ranging from 77 to 673 K. In spite of important changes in the spectra occurring under heating, we show that the a---b anisotropy, exemplified by Raman spectroscopy in Bi₂Sr₂CaCu₂O₈ and obvious on the macroscopic scale through the crystal morphology, still persists at 673 K. These changes are interpreted in terms of disordering effects in the BiO planes and speak in favor of an order-disorder transition around 500 K.     

The nuclear contribution to the specific heat of single crystals of YBa2Cu3O7 and Bi2Sr2CaCu2O8

Specific heat data below 1 K of Bi₂Sr₂CaCu₂O₈ and YBa₂Cu₃O₇ are analyzed. For YBa₂Cu₃O₇ the nuclear specific heat, C_N, amounts to 38T⁻² μJ/mol K. C_N for Bi₂Sr₂CaCu₂O₈ exceeds that of YBa₂Cu₃O₇ by a factor of 15. The nuclear quadrupolar specific heat contribution alone is insufficient to explain the data for YBa₂Cu₃O₇, while lack of NQR data does not allow such a comparison in Bi₂Sr₂CaCu₂O₈ to be made. The contribution to C_N from nuclear spins coupled via the contact hyperfine interaction with correlated magnetic spins (in the CuO₂ plane) is derived as a function of the correlation length. This contribution can be treated independently from the quadrupolar term. We show that the excess specific heat in YBa₂Cu₃O₇ likely originates in a few percentage of an impurity (oxygen deficient) phase with a strong hyperfine field on the Cu nuclei.     

Growth mechanism and characterisation of chemically grown Sb doped Bi2Se3 thin films

The synthesis of combinatorial Bi_2−xSb_xSe₃ thin films by arrested precipitation technique (APT) using triethanolamine-bismuth, triethanolamine-antimony and sodium selenosulphite as sources of Bi³⁺, Sb³⁺ and Se²⁻, respectively is investigated on commercial glass substrates. The growth mechanism of film formation, composition and surface morphology of the as deposited films were studied as a function of preparative parameters and bath composition. The films were monophasic, polycrystalline and covered the surface of the substrate completely. Energy dispersive X-ray analysis gave coherent elemental composition indicating single phase BiSbSe₃ was made. The good results obtained for Bi_2−xSb_xSe₃ thin films revealed that arrested precipitation technique is best suited for the deposition of large area thin films on conducting/nonconducting substrates to produce materials for device applications.     

Real-time image division in four-wave mixing with photorefractive Bi12GeO20 crystals

Real-time image division is obtained by using four-wave mixing of a reflection hologram type with photorefractive Bi₁₂GeO₂₀ crystals. This method utilizes the nonlinear characteristic of four-wave mixing which reverses the phase of the incident wave.     

探索基于人工超晶格LaFeO3-YMnO3和自然超晶格n-LaFeO3-Bi4Ti3O12薄膜多铁性

基于纳米尺寸下复合铁电材料和反铁磁性材料是一个探索多铁性材料有效的方法. 利用激光脉冲沉积制备出LaFeO₃-YMnO₃人工超晶格和掺入不同层LaFeO₃, BiFeO₃的Bi₄Ti₃O₁₂的外延薄膜. 通过系统的X射线衍射、透射电子显微术、扫描透射电子显微术下的能量损失谱表征证明这些样品具有原子尺寸上清晰的界面和完整的层状结构. 磁性测试证明这些材料具有亚铁磁性. 特别是在0.5和1.5LaFeO₃-Bi₄Ti₃O₁₂中的亚铁磁性甚至能保持到室温. 就铁电性而言, 铁电性测试显示出LaFeO₃-YMnO₃和插入BiFeO₃的Bi₄Ti₃O₁₂样品中存在较大的漏电流, 而在0.5LaFeO₃-Bi₄Ti₃O₁₂样品中存在铁电性. 因此在0.5LaFeO₃-Bi₄Ti₃O₁₂中能够实现亚铁磁和铁电共存. 其次发现当掺入多层的钙钛矿(3层SrTiO₃或2.5层LaFeO₃)后, Bi₄Ti₃O₁₂ 的层状结构将出现结构失稳现象. 这些工作对于利用纳米复合开发新颖多铁性提供一些实例.     

用正电子湮没研究纳米碲化铋的缺陷及其对热导率的影响

利用水热法合成了Bi₂Te₃纳米粉末, 并在300–500 ℃的温度范围内对其进行等离子烧结. X射线衍射测试表明制得的Bi₂Te₃粉末是单相的. 对于300–500 ℃范围内烧结的样品, 扫描电子显微镜观察发现随着烧结温度的升高样品颗粒明显增大, 但是根据X射线衍射峰的宽度计算得到的样品晶粒大小并没有明显的变化. 正电子湮没寿命测试结果表明, 所有的样品中均存在空位型缺陷, 而这些缺陷很可能存在于晶界处. 正电子平均寿命随着烧结温度的升高而单调下降, 说明较高的烧结温度导致了空位型缺陷浓度的降低. 另外, 随着烧结温度从300 ℃升高到500 ℃, 样品的热导率从0.3 W·m^-1·K^-1升高到了2.4 W·m^-1·K^-1, 这表明在纳米Bi₂Te₃中, 空位型缺陷和热导率之间存在着密切的联系.     

多铁材料Bi1-xCaxFeO3的介电、铁磁特性和高温磁相变

采用溶胶凝胶法制备Bi_1-xCa_xFeO₃ (x=0, 0.05, 0.1, 0.15, 0.2)陶瓷样品. X衍射图谱表明所有样品的主衍射峰均与纯相BiFeO₃相符合且具有良好的晶体结构. 随着x的增大, Bi_1-xCa_xFeO₃样品的主衍射峰由双峰(104)与(110) 逐渐重叠为单峰(110), 当x ≥0.15时, 样品呈现正方晶系结构; 扫描电镜形貌分析可知, 晶粒由原来的0.5 μm逐渐增大到2 μm. Bi_1-xCa_xFeO₃样品介电常数和介电损耗随着x 的增加先增大而后减小. 当f=1 kHz, Bi_0.9Ca_0.1FeO₃ 的介电常数达到最大值, 是BiFeO₃的7.5倍, 而Bi_0.8Ca_0.2FeO₃的介电常数达到最小值, 仅仅是BiFeO₃的十分之一. Bi_1-xCa_xFeO₃样品所呈现的介电特性是由偶极子取向极化和空间电荷限制电流两种极化机理共同作用的结果. 随着Ca²⁺ 的引入, BiFeO₃ 样品的铁磁性显著提高. X射线光电子能谱图表明Fe²⁺和Fe³⁺ 共存于Bi_1-xCa_xFeO₃ 样品中, Fe²⁺/Fe³⁺比例随着Ca²⁺ 掺杂量的增加而增大, 证明Ca²⁺掺杂增加了Fe²⁺的含量, 增强BiFeO₃的铁磁特性. 从M-T曲线观察到BiFeO₃样品在878 K附近发生铁磁相变, 示差扫描量热法测试再次证明BiFeO₃ 在878 K发生相变. Ca²⁺掺杂使BiFeO₃样品的T_N略有变化而T_M基本不变, 其主要原因是Fe-O-Fe反铁磁超交换作用的强弱和磁结构相对稳定.     

Low-temperature AC conductivity of Bi2Sr2CaCu2O8+δ

We report measurements of anamolously large dissipative conductivities, σ₁, in Bi₂Sr₂CaCu₂O_8+δ at low temperatures. We have measured the complex conductivity of Bi₂Sr₂CaCu₂O_8+δ thin films at 100–600 GHz as a function of doping from the underdoped to the overdoped state. At low temperatures there exists a residual σ₁ which scales with the T=0 superfluid density as the doping is varied. This residual σ₁ is larger than the possible contribution to σ₁ from a thermal population of quasiparticles (QP) at the d-wave gap nodes.     

Bi2ZnOB2O6单晶偏振拉曼光谱

本文通过分析不同几何配置下的偏振拉曼光谱对非线性光学晶体的晶格振动模式进行了研究. 首先根据因子群分析,将晶体的振动模按晶体对称群的不可约表示进行分类,其次测量了晶体在10–1600 cm^-1范围内,不同几何配置下的偏振拉曼光谱,并在此基础上指认了晶体的晶格振动模式. 300 cm^-1以下的振动峰,归结为晶体的外振动,来自[BiO₆],[ZnO₄],[BO₄]和[BO₃]原子基团的平动和转动;300cm^-1以上为晶体的内振动,主要与Bi-O,和Zn-O键振动有关. 晶体拉曼光谱中最高振动频率达到1407 cm^-1,被指认为[BO₃]三角形中B-O键的伸缩振动,体现了[BO₃]基团中高的电子非局域化程度. 关键词： 2ZnOB₂O₆单晶')" href="#">Bi₂ZnOB₂O₆单晶 偏振拉曼光谱 振动模式     

Electrochemical reduction of Bi2Sr2Ca1Cu2O8 superconductor single crystals

Single crystals and polycrystalline pellets of the high-temperature cuprate superconductor Bi₂Sr₂Ca₁Cu₂O₈ were doped at room temperature by electrochemical reduction at > 95% Coulombic efficiency using lithium dopant ions in propylene carbonate electrolyte. Cyclic voltammetry and potential step measurements on single crystals suggest an unusual reduction mechanism, with a diffusion coefficient for Li⁺ in the c-axis direction of bulk superconductor of ca. 3 × 10⁻¹¹ cm²s⁻¹. Sintered pellets of polycrystalline powder could be doped more rapidly, with an apparent diffusion coefficient of 7 × 10⁻⁸ cm²s⁻¹. X-ray susceptibility analysis show extensive disordering occurs on heavy Li doping, with a first-order transition from a crystalline/superconducting to an amorphous/non-superconducting phase. Single, crystals of Bi₂Sr₂Ca₁Cu₂O₈ exhibited a color change on reduction from metallic gray to golden bronze. The reduced material was highly air-sensitive, forming a hydroxide surface film on exposure to ambient atmosphere.     

Modelling of the reactive interface formation on Bi2Sr2CaCu2O8

We have applied the phenomenological model of diffused interfaces, developed originally to describe the Fe growth on Bi₂Sr₂CaCu₂O₈, to interpret quantitatively the core photoemission spectra of two reactive interfaces, namely Cr and Ge on Bi₂Sr₂CaCu₂O₈. At room temperature the interfaces with Fe and Cr have the same kinetics of growth suggesting similar adatom condensation, while the semiconductor-superconductor interface grows layer-by-layer according to the Franck-van der Merwe kinetics. Differences in the parameters of the model resulting from the simultaneous fit of the core-level decays are related to differences in the microscopic processes occurring during the growth.