对称测量法在霍尔元件测磁场中的应用

在用霍尔元件测磁场时，一般采用对称测量法以消除各种附加电压的影响，当出现某会加电压大于霍尔电压这种特殊情况时，该测量方法更为必要。     

对称测量法在用霍尔元件测磁场实验中不容忽视

用霍尔元件测磁场时,一般采用对称测量法支消除各种附加电压的影响 ,当出现某种随加 压大于霍尔电压的特殊情况时,该测量方法更和要。     

霍尔效应误差分析及霍尔应用

霍尔效应是研究半导体性质的重要手段,但霍尔电压的测量受到多种副效应的影响。通过分析误差来源加实验论证来探索对称测量法的优势,并且发现除四种常见热磁效应以外,仍存在附加电压。经过一些研究,提供了一些减小误差的方案。考虑到大学物理实验中没有设计霍尔效应的生活应用,本文简单介绍了霍尔开关原理及应用,希望通过本文对教学改革有进一步的推进作用。     

关于霍尔效应实验的误差分析

霍尔效应实验是一个受系统误差影响较大的实验,特别是在霍尔效应产生的同时,伴随产生的其他效应引起的附加电场对实验影响较大.本文简单介绍该实验的原理和实验误差的来源,使用Origin 6.0软件处理实验数据,分析附加电场对霍尔电压和电流线性关系的影响,以及对霍尔系数测量值的影响.结果表明:附加电场的存在不会影响所测霍尔电压和电流U-Is的线性关系,但对霍尔系数的测量有较大影响.     

霍尔电压测量中异常现象的分析与处理

本文分析了霍尔电压测量过程中出现的因不等位电压过高而引起的异常现象，并提出了解决办法。     

自制霍尔效应演示仪

利用霍尔效应原理制作了霍尔效应演示仪,详细介绍了该演示仪的制作过程,定性地演示了霍尔电压与通电电流和磁感应强度的关系.     

霍尔电压的简化测法

一、引言用霍尔元件测量磁场这一实验,现在教学中一般的测法是:对同一场点,利用磁场方向与元件工作电流方向的四种不同的组合,测取四个电压值,再由此四值算出霍尔电压,此法测量次数较多,计算量大。本文提出的简化测法是:只需测量磁场与电流的     

InSb霍尔传感器输出电压温度特性的研究

对InSb霍尔元件在－135～65℃内的霍尔电压的温度特性进行了测量,研究在恒流源和恒压源条件下其输出电压随温度的变化情况,并对其工作温度、线性范围及应用进行了探讨。     

分数量子霍尔效应的新理论

在经典霍尔效应中 ,霍尔电压ＶＨ 线性正比于垂直方向的外场Ｂ⊥ ,并且沿电流方向的纵向电压Ｖ∥ 也随Ｂ⊥ 的增加而连续上升 .1980年 ,冯·克里青 (ＫｌａｕｓｖｏｎＫｌｉｔｚｉｎｇ)用半导体场效应晶体管进行霍尔测量 ,研究被限制在二维平面内的电子运动 .他发现 ,在极低温和强磁场的条件下 ,霍尔电压ＶＨ 不再随外场的增加而线性增加 ,而是 (在ＶＨ-Ｂ⊥ 图上 )表现为一连串ＶＨ =常数的阶跃平台 .与一个个平台相对应的霍尔电阻ＶＨ Ｉ(Ｉ是纵向电流 )恰好等于物理常数ｈ ｅ2 除以一个整数ｉ(ｉ=1,2 ,3,4 ,… ) .克里青的发现后来被称为…     

双因素方差分析模型在霍尔测量中的应用

在测量半导体材料的霍尔效应实验中,研究霍尔电压在不同温度和不同磁场强度下变化情况。文章通过建立双因素方差分析数学模型对实验数据进行分析,判断不同的实验条件对实验结果是否有显著影响。     

A Study on Hall Voltage and Electrical Resistivity of Doped Conducting Polyaniline

We report the electrical resistivity of HCl doped polyaniline in the temperature range 77 T 300 K. A maximum is obtained in the conductivity versus concentration of HCl curve at 3(N) HCl. The resistivity of the sample has been observed to show a decreasing trend with increase in temperature. The resistivity obeys the Mott variable range hopping theory. The Mott characteristic temperature (T _Mott) is very low in this sample compared to other studies. The Hall voltages have been found to be negative. The Hall coefficient, carrier concentration, and density of states have been determined from Hall measurement. From the conductivity versus temperature plot, different physical quantities such as localisation length and molecular vibrational frequency have been determined.     

Electrical measurement of spin Hall current in mesoscopic ring: inhomogeneous Rashba effect

We investigate theoretically the spin Hall current in an inhomogeneous Rashba mesoscopic ring attached to four terminals. It is shown that a voltage drop can be tuned by adjusting the gate voltage due to the inhomogeneous Rashba effect, and provides us a tool to measure spin Hall current electrically. The spin Hall current and the ratio of the probe voltages can survive and keep their obvious relationship even in the presence of disorder. The regular relationship between the spin Hall conductance and the ratio of the probe voltages will be destroyed by the interference between different channels in multi-channel ring.     

Intrinsic contribution to spin Hall and spin Nernst effects in a bilayer graphene

We consider intrinsic contributions to the spin Hall and spin Nernst effects in a bilayer graphene. The relevant electronic spectrum is obtained from the tight binding Hamiltonian, which also includes the intrinsic spin-orbit interaction. The corresponding spin Hall and spin Nernst conductivities are compared with those obtained from effective low-energy k ?p and reduced Hamiltonians, which are appropriate for states in the vicinity of the Fermi level of a neutral bilayer graphene. Both conductivities are determined within the linear response theory and Green function formalism. The influence of an external voltage between the two atomic sheets is also considered. The results reveal a transition from the topological spin Hall insulator phase at low voltages to conventional insulator phase at larger voltages.     

Über die Hallspannungsmessungen in einer Gleichstromgasentladung

The superficial processes produced by the fast electrons in a d.c. glow discharge may influence the values of the potential difference measured with the Hall probes. In order to obtain a good agreement between calculated and measured Hall voltages it is necessary to exclude these superficial processes, specially the secondary electron emission, at the surface of the Hall probes. In this paper the mentioned influence and the optimum work conditions for Hall probes measurements in a d.c. glow discharge are studied.     

Hall effect induced by a spin-polarized current in superconductors

We propose a novel anomalous Hall effect caused by the spin-polarized current in superconductors (SC). The spin-polarized quasiparticles flowing in SC are deflected by spin-orbit scattering to yield a quasiparticle charge imbalance in the transverse direction. Overall charge neutrality gives rise to a compensating change in the number of Cooper pairs. A transverse electric field builds up as opposed to an acceleration of the Cooper pairs, producing the Hall voltage. It is found that the Hall voltages due to the side jump and skew scattering mechanisms have different temperature dependence in the superconducting state. A spin-injection Hall device to generate the ac Josephson effect is proposed.     

Intrinsic spin Hall effect in silicene: transition from spin Hall to normal insulator

An intrinsic contribution to the spin Hall effect in two‐dimensional silicene is considered theoretically within the linear response theory and Green's function formalism. When an external voltage normal to the silicene plane is applied, the spin Hall conductivity is shown to reveal a transition from the spin Hall insulator phase at low bias to the conventional insulator phase at higher voltages. This transition resembles the recently reported phase transition in bilayer graphene. The spin–orbit interaction responsible for this transition in silicene is much stronger than in graphene, which should make the transition observable experimentally. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Vertical hall effect in GaAs quantum wells

Applying orthogonal in-plane electric and magnetic fields in a 2D system leads to the development of a Hall voltage across the width of the quantum well when the cyclotron orbit is greater than the well width. Tang and Butcher [1] have calculated the developed Hall voltage for a parabolic quantum well where they find that the Hall voltage is dependent on the frequency associated with the harmonic potential in the well. The limitation of this model is that it does not enable one to determine the well width dependence of the Hall Voltage, nor is it a particularly good model for a quantum well. It is also difficult to compare their model with the bulk result which would apply at large well widths. In this work we present a model calculation which considers a square quantum well and hence is able to predict the well width dependence of the Hall Voltage and compare the large well width case to the bulk result. An electro-optic probing method previously used to measure bulk Hall voltages [2] is shown to be capable of measuring the Hall 'voltage across a quantum well, and therefore can be used to confirm the prediction of the model presented here.     

Temperature dependent electron transport in graphene

We have investigated the electron transport in graphene at different carrier densities. Single layer graphene was fabricated into Hall bar shaped devices by mechanical extraction onto a silicon oxide/silicon substrate followed by standard microfabrication techniques. From magnetoresistance and Hall measurements, we measure the carrier density and mobility at different gate voltages. Different temperature dependent resistivity behaviors are found in samples with high and low mobilities.     

基于双电源电压和双阈值电压的全局互连性能优化

基于双电源电压和双阈值电压技术,提出了一种优化全局互连性能的新方法.文中首先定义了一个包含互连延时、带宽和功耗等因素的品质因子用以描述全局互连特性,然后在给定延时牺牲的前提下,通过最大化品质因子求得优化的双电压数值用以节省功耗.仿真结果显示,在65 nm工艺下,针对5%,10%和20%的允许牺牲延时,所提方法相较于单电压方法可分别获得27.8%,40.3%和56.9%的功耗节省.同时发现,随着工艺进步,功耗节省更加明显.该方法可用于高性能全局互连的优化和设计. 关键词： 全局互连 双电源电压 双阈值电压 功耗     

霍尔式传感器的不等位电势补偿探讨

不等位电势是霍尔式传感器产生零位误差的主要因素.在霍尔式传感器的直流激励特性实验中霍尔元件处于梯度磁场中,但是磁场强度未知,因此无法确定磁场强度为零的位置.当采用交流激励时,通过调节霍尔元件在磁场中的位置,使输出的最小电势便是不等位电势,此时便可通过补偿桥路进行补偿.