KLiSO_4单晶的电学性质

我们证实了KLiSO_4为Li离子导体。通过测定样品中的电位分布,确定其载流子为间隙Li离子和Li空位。其电流弛豫在一定时域内遵从负幂次衰减规律。与之对应,在一定频域内存在与频率成负幂次关系的介电色散。在相变温度附近,本底电流、直流电导率和表观介电常数除发生跃变外还出现一个尖锐的小峰。此峰只有在变温速率较慢时才能观察到,表明该相变具有弛豫过程。     

改性锆钛酸铅温度诱导相变的热释电性

测量结果显示,Pb_0.99Nb_0.02［(Zr_1-xSn_x)_1-yTi_y］_0.98O₃在温度诱导相变时伴随有正的和负的热释电电流峰.电流的方向与相变类型有如下关系：铁电相向反铁电或顺电相转变时形成正的电流峰,反铁电相向铁电或顺电相转变时形成负的电流峰.按照铁电相与反铁电和顺电相之间存在静电势差的观点,可以很好地解释热释电电流的方向与 关键词： 改性锆钛酸铅化合物 温度诱导相变 热释电性     

α-碘酸锂的电流弛豫和偏压场作用下表观介电常数弛豫行为

本工作较为详细地测定了静电场作用下α-碘酸锂的电流弛豫行为:在撤去c轴方向上的静电场后,从我们所用测量电流仪器的响应时间到某一t_k的区间内,放电电流服从(t/t₀)^-α的负幂次方律;而在t>t_k,其规律近似地为:(t/t₀)^{(-α′ln(t/t₀))}。相关的弛豫参数α,α′和t_k在有限的范围内,依赖于温度和施加电压的大小,也因样品不同而有差异。对将近十个样品进行了测试,结果表明,大多数晶体在尽可能小的电压下0.43≤α≤0.7,0.07<α′<0.09;上述的电流弛豫表达式与α-碘酸锂在偏压场作用下观察到的其它物理现象的弛豫行为,与在中子衍射加强和表观介电常数中的表现如出一辙;可以初步肯定各种现象的弛豫行为具有相同的物理根源。 关键词：     

La2-xNdxCuO4+δ(0.1≤x≤1.2)体系中滞弹性弛豫与相变内耗研究

通过对La_2-xNd_xCuO_4+δ(0.1≤x≤1.2)体系中滞弹性弛豫与相变内耗性能的研究发现,当0.1≤x≤1.0时,在250K左右存在一个与间隙氧有关的弛豫内耗峰,并且当0.1≤x≤0.4时,弛豫内耗峰峰高随着x值的增大而升高,此时体系为正交结构;当0.5≤x≤1.0时,体系在宏观上呈现四方结构,此时内耗峰峰高随着x< 关键词： 2-xNd_<i>xCuO_4+δ')" href="#">La_2-xNd_<i>xCuO_4+δ 间隙氧 弛豫内耗峰 相变内耗峰     

非化学计量比铌酸钾锂晶体的光谱特征

用顶部籽晶法生长了一批不同组成的铌酸钾锂晶体。利用近红外cw: Ti-sapphire激光研究了三种组成的经过精细抛光的晶体样品的二次谐波性质,结果表明晶体的二次谐波效应与晶体组成密切相关,Li含量越高的样品倍频效率越高。利用红外Raman光谱技术调查了晶体非线性晶格振动特征,分析了晶体中组分离子浓度对晶体红外Raman光谱特征的影响,探讨了组分离子对晶体二次谐波性质影响的原因。结果表明,晶体中位于C格位的Li离子浓度对晶体Raman光谱产生了强烈的影响,低Li含量晶体中[NbO₆]7-八面体所对应的3个Raman特征光谱线没有峰发生分裂;当晶体中Li离子浓度增加时,ν₅所对应的Raman峰有所加宽,ν₂振动模式出现分裂峰,并在100～400 cm-1范围出现小峰数量增多;当Li离子浓度接近铁电相边界时,[NbO₆]7-八面体结构接近解体,ν₅所对应的Raman峰分裂成3个峰,ν₁和ν₂振动模式发生部分分裂,在100～400 cm-1范围小峰更为突出。这些影响的本质在于晶体中Li含量的提高导致晶体中[NbO₆]7-八面体畸变程度加大,与晶体非线性光学性质相一致。     

硫酸锂钾的室温相和低温相的锂离子位置

核磁共振实验表明,LiKSO₄在T_c=195K发生结构相变。本文报道了温度低于T_c时,Li位电场梯度张量的温度依赖关系。结合理想离子晶体模型,讨论了该晶体的结构,指出室温相Li的位置并不像Bradley所推测的,在(2/3,1/3,0.849)的位置,而应在(2/3,1/3,0.706)的位置;195K的相变是由于Li离子的位移造成;低温相的空间群可能为R3。 关键词：     

GdBaCo2O5+δ体系的滞弹性内耗研究

GdBaCo₂O_5+δ体系的低频内耗研究表明：体系中存在一个由额外氧运动引起的弛豫内耗峰；额外氧δ对这个弛豫内耗峰的大小、峰形及峰位有较大影响，反映了额外氧状态随δ而变化.当δ=0.005，体系中额外氧含量很少而接近零时，相应的内耗峰消失；δ达到一定数量后，出现弛豫内耗峰.由δ=0.278，0.407，0.421，0.515样品的弛豫内耗峰分析可得到体系随δ不同存在着三种不同的额外氧形态.此外，δ=0.421及0.515的样品在360K附近存在一个相变内耗峰，它对应着体系中的金属—绝缘体转变. 关键词： 2O_5+δ')" href="#">GdBaCo₂O_5+δ 额外氧 内耗峰     

ZnO压敏陶瓷介电损耗的温度谱研究

利用Novocontrol宽频介电谱仪在-100—20 ℃温度范围内测量了ZnO-Bi₂O₃系压敏陶瓷的介电频谱,其频率范围为10^-2—10⁶ Hz. 研究表明： ZnO压敏陶瓷特征损耗峰的活化能分别为0.26和0.36 eV,结合实验条件、理论计算结果及其他现象的分析排除了特征损耗峰源于阴极电子注入、夹层极化和偶极子转向极化的可能.热刺激电流（TSC）谱共出现三个峰,其中高温峰对应于TSC实验加压过程引入的热离子极化,而中温峰和低温峰对应于介电损耗峰. 在分析的基础上,提出了ZnO压敏陶瓷的特征损耗峰起源于耗尽层内本征缺陷的电子弛豫过程. 关键词： ZnO压敏陶瓷 本征缺陷 介电谱 热刺激电流     

氧离子导体La_(1.95)K_(0.05)Mo_(2-x)Mn_xO_(9-δ)的内耗研究

本文用低频内耗的方法研究了氧离子导体材料La1.95K0.05Mo2-xMnxO9中氧离子的微观扩散机制。当测量频率为0.5 Hz时,在130℃和520℃附近分别观察到一弛豫内耗峰,而在280℃~300℃范围内有一相变峰存在。讨论了各个内耗峰的机理。     

氧离子导体La1.95K0.05Mo2-xMnxO9-δ的内耗研究

本文用低频内耗的方法研究了氧离子导体材料La1.95K0.05Mo2-xMnxO9中氧离子的微观扩散机制.当测量频率为0.5 Hz时,在130℃和520℃附近分别观察到一弛豫内耗峰,而在280℃～300℃范围内有一相变峰存在.讨论了各个内耗峰的机理.     

室温下KLiSO4晶体的中子衍射结构分析

用中子衍射方法研究了室温下KLiSO₄的晶体结构,进一步确定了Li原子的位置,所得到的结果与近年采用X射线分析的结果在z/c上的差异小于1％。 关键词：     

Electrical and thermoluminescence properties of γ-irradiated La2CuO4 crystals

Abstract

Measurements of the electrical properties of unirradiated as well as γ-irradiated La₂CuO₄ crystals were carried out at different temperatures in the frequency range of 0.1-100 kHz. Thermoluminescence (TL) studies were also performed on such crystals in the temperature range of 300-600K. The conductivity of the unirradiated La₂CuO₄ crystals were found to obey the power law frequency dependence at each measured temperature below the transition temperature (T_c = 450K). The activation energies for conduction and dielectric relaxation time have been calculated. The TL response and the dc resistance were found to increase with γ-irradiation dose up to 9-10 kGy. The results showed that the ferroelastic domain walls of La₂CuO₄ crystal as well as its TL traps are sensitive to γ-raditaion. This material can be used in radiation measurements in the range 225 Gy-10 kGy.     

离子导体在直流偏压作用下的介电特性

在我们以前的工作中,发现α-LilO₃在c向直流偏压作用下表观介电常数增加。并把这一现象归结为由离子导电所产生。本文进一步研究了离子导体KLiSO₄和NaCl单晶在直流偏压下的介电特性,也观察到了表观介电常数改变的现象,证实了上述结论的正确性。我们也研究了离子导体的这一特性与温度、频率和样品四周气氛的关系,讨论了它发生的条件。 关键词：     

Dielectric and polarization properties of KH<Subscript>2</Subscript>PO<Subscript>4</Subscript> single crystals doped with Li,Na, and NH<Subscript>4</Subscript> impurities

The dielectric and polarization properties of potassium dihydrogen phosphate (KDP) single crystals doped with Li, Na, and NH₄ impurities have been investigated in the temperature range 70–150 K. It is found that the domain freezing temperature in the lithium-containing sample exceeds that for nominally pure KDP. Disappearance of freezing is observed in the ammonium-doped crystal.     

Nonlinear dielectric response in the mixed K0.91(NH4)0.09H2PO4 crystal

The influence of bias and variable electric fields on the dielectric response of the K_0.91(NH₄)_0.09H₂PO₄ single crystal has been studied in the vicinity of the ferroelectric phase transition temperature T _C. Below T _C, the nonlinear response is caused mainly by the domain mechanism. This is confirmed, in particular, by observations of chaotic oscillations in a series RLC-circuit containing the studied sample as a capacitor C and excited by a sinusoidal voltage. Peculiarities of the behavior of the dielectric nonlinearity are found near the Curie temperature, which are explained by the emergence of an intermediate heterophase state.     

Investigation of dielectric, piezoelectric and ferroelectric properties of b-axis grown triglycine sulphate single crystal

Large single crystal of triglycine sulphate (dimension 100 mm along monoclinic b-axis and 15 mm in diameter) was grown using the unidirectional solution growth technique. The X-ray diffraction studies confirmed the growth/long axis to be b-axis (polar axis). The dielectric studies were carried out at various temperatures to establish the phase transition temperature. The frequency response of the dielectric constant, dielectric loss and impedance of the crystal along the growth axis, was monitored. These are typically characterized by strong resonance peaks in the kHz region. The piezoelectric coefficients like stiffness constant (C), elastic coefficient (S), electromechanical coupling coefficient (k) and d ₃₁ were calculated using the resonance-antiresonance method. Polarization (P)-Electric field (E) hysteresis loops were recorded at various temperatures to find the temperature-dependent spontaneous polarization of the grown crystal. The pyroelectric coefficients were determined from the pyroelectric current measurement by the Byer and Roundy method. The ferroelectric domain patterns were recorded on (010) plane using scanning electron microscopy and optical microscopy.     

Effect of deuteration on the electrical conductivity,dielectric constant and phase transitions in LiNH4SO4

Measurements of dc conductivity and dielectric constant show that deuteration causes an upward shift of the high temperature phase transition point from 186.5 to 191°C and a downward shift of the low temperature transition point from 10 to -1.5°C in LiNH₄SO₄. Mechanisms of phase transitions and of electrical transport in the crystal are discussed.     

Nonlinear dielectric properties of planar structures based on ferroelectric betaine phosphite films

Ferroelectric films of partly deuterated betaine phosphite are grown on NdGaO₃(001) substrates with an interdigitated system of electrodes on their surfaces by evaporation at room temperature. These films have a high capacitance in the ferroelectric phase transition range. The dielectric nonlinearity of the grown structures is studied in small-signal and strong-signal response modes and in the intermediate region between these two modes by measuring the capacitance in a dc bias field, dielectric hysteresis loops, and the Fourier spectra of an output signal in the Sawyer-Tower circuit. In the phase transition range, the capacitance control ratio at a bias voltage U _bias = 40 V is K ? 7. The dielectric nonlinearity of the structures in the paraelectric phase is described by the Landau theory of second-order phase transitions. The additional contribution to the nonlinearity in the ferroelectric phase is related to the motion of domain walls and manifests itself when the input signal amplitude is higher than U _st ～ 0.7–1.0 V. The relaxation times of domain walls are determined from an analysis of the frequency dependences of the dielectric hysteresis.     

KTiOPO4晶体纵横模劈裂的喇曼谱

在室温下测量了ＫＴｉＯＰＯ₄单晶的偏振喇曼散射谱，应用９０°散射及背散射得到了各模的峰位值，其中Ｂ₁（ＬＯ）模、Ｂ₂（ＬＯ）模的喇曼谱测量尚未见报道过。根据ＬＯ－ＴＯ劈裂的实验结果，计算出该晶体极化模的有效电荷、振子强度及沿对称轴方向的静态介电常数。 关键词：     

Selective modulation of infrared radiation by an Al2O3 particles — liquid crystal system

We have developed a dual-frequency liquid crystal consisting of 4-n-pentyl-4′-cyanobiphenyl (5CB), 4-hexyloxyphenyl-4′-hexyloxy-3-nitrobenzoate (C2), and 4-butyl-4′-(hexyloxyphenyloxycarbonyl)phenyl carbonate (H22). We have measured the frequency dependences of the longitudinal and transverse components of the dielectric constant of the mixture and we have determined the frequency regions of positive and negative dielectric anisotropy. We show that for certain changes in the frequency of the applied electric field while the magnitude of the field remains the same, the transmission region of the Al₂O₃ particles — dual-frequency liquid crystal system switches from one wavelength to the other. The experimental results are explained by the optical homogeneity of the system in a narrow wavelength interval when the refractive indices of the particle material and the matrix are close, and also by reorientation of the liquid crystal molecules as the frequency of the applied voltage changes.