Diffusion of Al in ion-implanted Pd and Pt

The diffusion coefficients of aluminium have been measured in polycrystalline fcc Pd and Pt. The Al-implanted palladium and platinum samples were annealed at 400°–800 °C and 450°–900 °C, respectively. The aluminium profiles were probed using the nuclear resonance broadening (NRB) technique. Values of (1.41±0.09) and (1.38±0.09) eV for the activation energy and (1.5 _–1.0 ⁺⁵ )×10^–6 and (4 _–3 ⁺¹⁰ )×10^–7cm²/s for the frequency factor were obtained for Al in Pd and Pt, respectively. These anomalous results, compared to the normal impurity diffusion, were checked using also Al-evaporated samples.     

XeCl-laser-generated ablation products from a nitrogen-rich polymer studied by laser-ionization mass spectrometry

Laser-ionization time-of-flight mass spectrometry has been used to probe laser-ablation products from a nitrogen-rich polymer at a wavelength of 308 nm. The ablation products at a laser fluence of 150 mJ/cm² showed, similar to 532 nm ablation studied previously [18], two strong peaks due to neutral species that were assigned to C⁺ and CN⁺, as well as several weak peaks that were assigned to CH⁺, HCN⁺, HCNH⁺, H_nN–CN⁺ (n=1–3), and H₂N–C=N–CN⁺ or H₂N–C=N–CN⁺. The ablation products at 870 mJ/cm² revealed, in addition to a broad signal due to ionic products generated directly by the ablation laser, several peaks due to neutral products that were assigned to C⁺, C ₂ ⁺ , C ₃ ⁺ , CN⁺, HCN⁺, HCNH⁺, and NCCN⁺. The most probable flight velocities for major neutral products are 5.7×10⁴ cm/s at 150 mJ/cm² and 2.3–2.7×10⁴ cm/s at 870 mJ/cm². The results at a laser fluence of 150 mJ/cm² support the finding that the translational energy of the tragments has importance for the collision-induced product generation in the laser plume, as suggested earlier [18]. Furthermore, the product generation at 870 mJ/cm² is interpreted by the ejection of small neutral and ionic fragments, and subsequent reactions among the fragments.     

Conductance studies of NaCl, KCl, NaBr, NaI, NaBPh4, Bu4NI and NaClO4 in water + 2-methoxyethanol mixtures at 298.15 K

The electrical conductances of the solutions of sodium chloride (NaCl), potassium chloride (KCl), sodium bromide (NaBr), sodium iodide (NaI), sodium tetraphenylborate (NaBPh₄), tetrabutylammonium iodide (Bu₄NI) and sodium perchlorate (NaClO₄) in water (1) + 2-methoxyethanol (2) mixtures containing 0.01, 0.025, 0.05, 0.075, 0.10, 0.15 and 0.20 mol fractions of 2-methoxyethanol have been reported at 298.15 K. The conductance data have been analyzed by the Fuoss–Justice equation. The individual limiting ionic conductivities of Na⁺, K⁺, Bu₄N⁺, BPh₄⁻, I⁻, Cl⁻, and Br⁻ ions have been determined using the Fuoss–Hirsch assumption. The dependencies of the limiting molar conductances, Λ_o, and Walden products, Λ_oη, versus mixed solvent composition have been discussed.     

Diffusion of silicon in titanium nitride films. Efficiency of TiN barrier layers

Two kinds of reactively evaporated titanium nitride films with columnar (B ₀ films) and fine-grained film structure (B ₊ films) have been examined as diffusion barriers, preventing the silicon diffusion in silicon devices. The silicon diffusion profiles have been investigated by 2 MeV ⁴He⁺ Rutherford backscattering spectrometry (RBS) after annealing at temperatures up to 900° C, in view of application of high-temperature processes. The diffusivity from 400 to 900° C: D (m² s^–1)=2.5×10^–18 exp[–31 kJ/mol/(RT)] in B ₀ layers and D (m² s^–1)=3×10^–19 exp[–26 kJ/mol/(RT) in B ₊ TiN layers. The diffusivities determined correspond to grain boundary diffusion, the difference being due to the different microstructure. The very low diffusivity of silicon in B ₊ TiN layer makes it an excellent high-temperature barrier preventing silicon diffusion.     

Synthesis of anatase-type TiO2 films by reactive laser ablation of a metallic Ti target in ambient O2 gas

TiO₂ films having anatase-type crystal structures were synthesized by reactive laser ablation of a metallic Ti target in ambient O₂ gas. The anatase-type TiO₂ was obtained at O₂ pressures below 0.2 Torr and at substrate temperatures above 150 °C. The films had the (101) orientation at substrate temperatures of 200–250 °C while, at substrate temperatures of 400–450 °C, the orientation of the films was (004). Rutile-type crystal was mixed in at substrate temperatures higher than 450 °C. The synthesis characteristics were compared with the fluxes of Ti, Ti⁺, and TiO toward the substrate, which were evaluated by laser-induced fluorescence imaging spectroscopy. PACS 81.15.Fg; 61.10.-i; 52.70.Kz     

Radiation damage and annealing studies of ion bombarded cobalt

The effects of implantation-induced radiation damage on the thermal oxidation of cobalt have been studied. Bombardment by both Co⁺ self-ions and by Xe⁺ has been studied as a function of ion dose, energy and annealing temperature. A major increase in oxidation was observed for doses of >10¹⁶ Co⁺ cm^–2 in agreement with previous studies on Al. The oxidation behaviour as a function of annealing temperature was markedly different for Co⁺ and Xe⁺ bombarded samples. For Co⁺ bombarded samples, damage anneals rapidly in the temperature range 20–300°C due to thermally assisted repair of point defects and vacancy clusters. However, for Xe⁺ bombardment, it is proposed that the higher annealing temperatures required for damage repair arise due to the stabilisation of three-dimensional vacancy clusters by the oversized Xe atoms. The increase in oxidation after annealing in the temperature range 300–500°C is thought to be due to vacancy release mechanisms which may affect oxide nucleation.     

Orthogonality and Boundary Conditions in Quantum Mechanics

One-dimensional particle states are constructed according to orthogonality conditions, without requiring boundary conditions. Free particle states are constructed using Dirac's delta function orthogonality conditions. The states (doublets) depend on two quantum numbers: energy and parity (+ or —). With the aid of projection operators the particles are confined to a constrained region, in a way similar to the action of an infinite well potential. From the resulting overcomplete basis, only the mutually orthogonal states are selected. Four solutions are found, corresponding to different non-commuting Hamiltonians. Their energy eigenstates are labeled with the main quantum number n and parity + or —. The energy eigenvalues are functions of n only. The four cases correspond to different boundary conditions: (I) The wave function vanishes on the boundary (energy levels: l⁺,2^–,3⁺,4^–,...), (II) the derivative of the wavefunction vanishes on the boundary (energy levels 0⁺,l^–,2⁺,3^–,...), (III) periodic boundary conditions (energy levels: 0⁺,2⁺,2^–,4⁺,4^–6⁺,6^–,...), (IV) periodic boundary conditions (energy levels: l⁺,1^–,3⁺,3^–,5⁺,5^–,...). Among the four cases, only solution (III) forms a complete basis in the sense that any function in the constrained region, can be expanded with it. By extending the boundaries of the constrained region to infinity, only solution (III) converges uniformly to the free particle states. Orthogonality seems to be a more basic requirement than boundary conditions. By using projection operators, confinement of the particle to a definite region can be achieved in a conceptually simple and unambiguous way, and physical operators can be written so that they act only in the confined region.     

Trap centers in Au-implanted MOS structures

Trap centers in the Si-SiO₂ interface region of MOS structures doped by ion implantation of gold have been investigated using constant capacitance deep level transient spectroscopy (CC-DLTS). Gold doses of 10¹²–3 × 10¹³ cm^–2 were implanted into the back surface of the wafers and were then redistributed during a diffusion anneal for 30 min at 1100° or 900° C. Three Au-related trap levels have been observed in the interface region, which were attributed to the Au-donor (E _v +0.35 eV), the Au-acceptor (E _v +0.53 eV), and the Au-Fe complex (E _v +0.45 eV). The trap concentration profiles show that the Si-SiO₂ interface affects the Au concentration in a depth range of 1 m from the interface and that gettering of Au occurs at the interface. The interface state density is independent of the Au concentration at the interface even for concentrations of 10¹⁵ cm^–3.     

Investigation of the Fiban K-1 Sulfocationite by the IR Spectroscopy Method

Using the IR spectroscopy method, we have studied the state of water, sulfogroups, and adsorbed methanol in a Fiban K-1 fibrous cationite under different conditions of preparation of a sample. It is shown that on an air-dried cationite protonation of methanol is performed by the ionic pair [(H_2n+1O _n )⁺·SO₃ ^–] after vacuum treatment at 20°C and by the ionic pair [H⁺·SO₃ ^–] after vacuum treatment at 90°C.     

Sequence of structural-phase states during implantation of C+, N+, and Si+ ions into molybdenum

The sequence of structural-phase changes in the surface layer of molybdenum during pulsed implantation of N⁺, C⁺, and Si⁺ ions has been studied. At radiation doses 5·10¹⁶ cm^–2 we detected qualitatively similar structural-phase transformations with the formation of highly dispersed secondary-phase particles (nitrides, carbides, and silicides), dislocations, point defects, and clusters of defects. At radiation doses (1–2)·10¹⁷ cm^–2 implantation of C⁺ and Si⁺ ions causes amorphization of the surface layer; nitrogen implantation is accompanied by the formation of continuous layers of the nitride phase on the surface.Siberian Physicotechnical Institute at the V. D. Kuznetsov State University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 3–9, February, 1994.     

Aluminium diffusion in titanium nitride films. Efficiency of TiN barrier layers

Two kinds of reactively evaporated titanium nitride films with columnar (B ₀ films) and fine-grained (B ₊ films) film structures, respectively, have been examined as diffusion barriers for preventing aluminium diffusion. The aluminium diffusion profiles have been investigated by 2 MeV ⁴He⁺ Rutherford backscattering spectrometry (RBS) at temperatures up to 550° C. The diffusivity from 300° C to 550° C is: D[m²s^–1]=3×10^–18 exp[–30/(RT)] in B ₀ layers and D[m²s^–1]=1.4×10^–16 exp[–48/(RT)] in B ₊ TiN layers. The activation-energy values determined indicate a grain boundary diffusion mechanism. The difference between the diffusion values is determined implicitly by the microstructure of the layers. Thus, the porous B ₀ layers contain a considerable amount of oxygen absorbed in the intercolumnar voids and distributed throughout the film thickness. As found by AES depth profiling, this oxygen supply allows the formation of Al₂O₃ during annealing the latter preventing the subsequent diffusion of the aluminium atoms.     

High-Resolution Study of the BaI AΠ Electronic State

Near-infrared and visible spectra of the A²Π–X²Σ⁺, C²Π_1/2–A²Π_1/2, C²Π_1/2–B²Σ⁺, and C²Π_1/2–X²Σ⁺ band systems of the BaI molecule were recorded by using Fourier transform spectroscopy (FTS). The spectra were produced from the chemiluminescent reaction Ba + I₂ and also by using laser-induced fluorescence (LIF) technique in which the laser sources were a Ti:sapphire single-mode laser, a dye single-mode laser, and a Kr⁺ multimode ion laser. Resolved rotational data, originating from 19 vibrational levels (0 ≤ v ≤ 5 and 7 ≤ v ≤ 19) of the A²Π state, 24 vibrational levels (0 ≤ v ≤ 18 and 20 ≤ v ≤ 24) of the X²Σ⁺ state, and 8 vibrational levels (1 ≤ v ≤ 2 and 9 ≤ v ≤ 14) of the C²Π state, were used in the final analysis. Previously recorded data for the B²Σ⁺–X²Σ⁺ and C²Π–X²Σ⁺ systems, taken from R. F. Gutterres, J. Vergès, and C. Amiot, J. Mol. Spectrosc. 196, 29–44 (1999) and from C. A. Leach, A. A. Tsekouras, and R. N. Zare, J. Mol. Spectrosc. 153, 59–72 (1992), were added to the present work data field. Accurate and improved molecular constants, for the X²Σ⁺, B²Σ⁺, A²Π, and C²Π states, were derived from a simultaneous treatment of the whole data set.     

Tritium isotope separation by CO2-laser irradiation at low temperatures

Tritium isotope separation by CO₂-laser induced multiphoton dissociation of CTF₃ is investigated. For the optimization of the performance of this working substance, trifluoromethane, the conditions to yield high-selectivity at high-operating pressure and low-critical fluence for complete dissociation are studied using our deconvolution procedure. The irradiation conditions are varied over the following ranges; wavenumber: 1052–1087 cm^–1, gas temperature: 25°C to –78°C, CHF₃ pressure: 5–205 Torr. The selectivities exceeding 10⁴ are observed for 85–205 Torr CHF₃ at –78°C by the irradiation at 1057 cm^–1.     

Equilibrium charge state distributions of beam foil excited molecular fragments exiting carbon foils

Summary Equilibrium charge state distributions of ions emerging from solids have been measured. As incident particles were used both atomic (C⁺, N⁺, O⁺) and molecular (N ₂ ⁺ , CO⁺) projectile ions (0.025<E/M<0.108 MeV/u). The data of atomic projectile ions agree well with the data of other authors in a range in which they overlap. Charge state fractions of emerging molecular-fragment ions behind a carbon foil are strongly influenced by the Coulomb explosion and possibly by the wake potential. Supported by BMFT/Bonn.     

Analysis of inelastic scattering of 3He on 13C at 37.9 MeV

The differential cross section of elastic and inelastic scattering of ³He ions on the ¹³C nucleus has been measured at an energy of 37.9 MeV. By fitting the shape of the measured angular distribution of the elastic scattering the parameters of the optical model have been found. These parameters have been used for the DWBA calculations of angular distributions corresponding to excitations of the ¹³C levels 3.09(1/2⁺) MeV, 3.68(3/2^–) MeV, 3.85(5/2⁺) MeV, 7.55(5/2^–) MeV, 8.84(1/2^–) MeV and 11.85(7/2⁺) MeV. Several sets of transition densities calculated with different effective nucleon-nucleon interactions and six different M3Y interactions between a projectile and target nucleon have been tested. Analysis of the inelastic scattering of 135 MeV protons on ¹³C is also presented, which enabled us to obtain additional information about the tested structure models.     

Argon ion laser-induced BaS BΣ-AΣ, A′Π, aΠ, and XΣ fluorescence spectra: Analysis of A A′, A a, and A′ a perturbations

The 333.6-, 351.1-, and 363.8-nm lines of a cw argon ion laser are found to coincide with the BaS B¹Σ⁺-X¹Σ⁺ (12, 0) R(17), (6, 0) P(35), and (3, 0) R(125) transitions, respectively. Fluorescence transitions from the laser-prepared upper levels terminating in X¹Σ⁺ V = 0–28, A¹Σ⁺ V = 1–3, A′¹Π V = 1–13, and a³Π₁ V = 3–12 are assigned. These results are combined with a previous analysis of the extensively perturbed BaS A¹Σ⁺-X¹Σ⁺ system [R. F. Barrow, W. G. Burton, and P. A. Jones, Trans. Farad. Soc.67, 902–906 (1971)]. Every observed perturbation of the BaS A¹Σ⁺ state is electronically and vibrationally assigned. The levels a³Π₀ V = 10–13, a³Π₁ V = 12–14, a³Π₂ V = 15, and A′¹Π V = 10–13 are sampled via their perturbations of A¹Σ⁺ V = 0–2. Although the mutual interactions of the a³Π, A′¹Π, and A¹Σ⁺ states approach Hund's case (c) limit, a complete deperturbation is performed from a case (a) starting point. Of the five lowest energy electronic states of BaS, only b³Σ⁺ remains uncharacterized. Principal deperturbed molecular constants are (in cm⁻¹, 1σ uncertainties in parentheses):

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Electrolytic coloration and spectral properties of OH- and Cu-codoped NaCl crystals

OH⁻- and Cu⁺-codoped NaCl crystals are colored electrolytically by using a pointed anode and a flat cathode at various temperatures and under various voltages. Absorption and fluorescence spectral properties of colored crystals are investigated. Absorption, excitation and fluorescence spectra reveal existence of V₂, V₂^m, V₃, OH⁻, U, U_A, O²⁻–V_a⁺, O₂⁺, Cu⁺, Cu⁰, Cu⁻ and OH⁻-perturbed Cu⁺ color centers in colored crystals. Formations of color centers are explained.     

The oscillator representation and the stability of three-body Coulomb systems

Within nonrelativistic quantum mechanics the Wick-ordering method, called the oscillator representation, is suggested for calculating the energy spectrum for a wide class of potentials allowing the existence of a bound state. As test cases, anharmonic (V(r)=r ²) and screened Coulomb potentials are considered. In particular, the method is applied to three-body Coulomb systems to obtain the dependence of the bound-state energy on the masses and charges of the particles. The calculations of the bound-state energies for the moleculesH ^–=(pee),H ₂ ⁺ =(ppe), (e ^–e^–e⁺) and (pp), (dd), (dt) prove the accuracy of the zeroth approximation to be better than one per cent. For the three-body Coulomb system with charges +, –, – and arbitrary masses the region of stability is determined. For the systems (pe ^–C⁺), (A ⁺e^–e⁺), and (pB ^–e^–) the critical masses are calculated to beM _c=1.945m_e,M _A=4.350m_e andM _B=1.575m_e. It turns out that the system (pe ^–e⁺) is unstable.     

Annealing behaviour of high-dose-implanted nitrogen in InP

Concentration profiles of nitrogen in vacuum-annealed p- and n-type single-crystal (1 0 0) InP implanted with 1 × 10¹⁶ 30 keV¹⁵N⁺ ions cm^–2 have been studied by Secondary Ion Mass Spectrometry (SIMS) and Nuclear Resonance Broadening (NRB) techniques. Damage induced by the nitrogen implantation was studied by Rutherford Backscattering Spectrometry (RBS) and channeling. Annealing the samples led to loss and redistribution of nitrogen in the temperature range from 575 to 675 °C. At temperatures from 575 to 600 °C, rapid migration of nitrogen towards the sample surface was observed. The n-type InP material had a very dominant tendency for surface nitrogen build-up, whereas the p-type material had a markedly smaller surface peak in the nitrogen distribution. The surface peak in n-type material is due to sulphur acting partly as a diffusion barrier. SIMS analyses showed sulphur build-up on the surface in the course of annealing. At temperatures from 600 to 675 °C, the nitrogen profiles of n- and p-type InP were similar. A small loss of nitrogen was observed at 625–675 °C. Two different recovery stages were observed at 575–600°C and at 625–650 °C. The corresponding activation energies for nitrogen loss are 2.9 and 3.0 eV, respectively.     

Mass formulas for meson nonets

General mass formulas corresponding to irreducible nonet representations of the Formánek infinited imensional Lie algebra A(P, SU₃) are derived and compared with experimental data in cases of 0^–, 1⁺, 1^– and 2⁺ meson nonets.The authors wish to thank Prof. dr. V. Votruba for his continuosu interest in their work and for helpful comments.