Investigation of polymer/inorganic hybrid photovoltaic device using quantum dots as the interface modifier

CdS quantum dots (QDs) were introduced as an interface modifier in the poly(3-hexylthiophene) (P3HT)/TiO₂ nanorod arrays hybrid photovoltaic device. The presence of CdS QDs interlayer was found to provide enhanced light absorption, increased interfacial recombination resistance at the P3HT/TiO₂ interfaces, thus leading to a lower recombination rate of the electrons due to the stepwise structure of band edge in P3HT/CdS/TiO₂, which accounts for the observed enhanced photocurrent and photovoltage of the hybrid solar cells. The optimized performance was achieved in P3HT/CdS/TiO₂ hybrid solar cells after deposition of CdS QDs for 10 cycles, with a power conversion efficiency of 0.57 %, which is nearly ten times higher than that of P3HT/TiO₂. The findings indicate that inorganic semiconductor quantum dots provide effective means to improve the performance of polymer/TiO₂ hybrid solar cells.     

Experimental and theoretical studies of Si-CN bonds to eliminate interface states at Si/SiO2 interface

Cyanide treatment, which includes the immersion of Si in KCN solutions followed by a rinse, effectively passivates interface states at Si/SiO₂ interfaces by the reaction of CN⁻ ions with interface states to form Si-CN bonds. X-ray photoelectron spectroscopy (XPS) measurements show that the concentration of the CN species in the surface region after the cyanide treatment is ∼0.25 at.%. Take-off angle-dependent measurements of the XPS spectra indicate that the concentration of the CN species increases with the depth from the Si/SiO₂ interface at least up to ∼2 nm when ultrathin SiO₂ layers are formed at 450 °C after the cyanide treatment. When the cyanide treatment is applied to metal-oxide-semiconductor (MOS) solar cells with 〈ITO/SiO₂/n-Si〉 structure, the photovoltage greatly increases, leading to a high conversion efficiency of 16.2% in spite of the simple cell structure with no pn-junction. Si-CN bonds are not ruptured by air mass 1.5 100 mW cm⁻² irradiation for 1000 h, and consequently the solar cells show no degradation. Neither are Si-CN bonds broken by heat treatment at 800 °C performed after the cyanide treatment. The thermal and irradiation stability of the cyanide treatment is attributable to strong Si-CN bonds, whose bond energy is calculated to be 1 eV higher than that of the Si-H bond energy using a density functional method.     

Interfacial engineering of CuO nanorod/ZnO nanowire hybrid nanostructure photoanode in dye-sensitized solar cell

Developing efficient and cost-effective photoanode plays a vital role determining the photocurrent and photovoltage in dye-sensitized solar cells (DSSCs). Here, we demonstrate DSSCs that achieve relatively high power conversion efficiencies (PCEs) by using one-dimensional (1D) zinc oxide (ZnO) nanowires and copper (II) oxide (CuO) nanorods hybrid nanostructures. CuO nanorod-based thin films were prepared by hydrothermal method and used as a blocking layer on top of the ZnO nanowires’ layer. The use of 1D ZnO nanowire/CuO nanorod hybrid nanostructures led to an exceptionally high photovoltaic performance of DSSCs with a remarkably high open-circuit voltage (0.764 V), short current density (14.76 mA/cm² under AM1.5G conditions), and relatively high solar to power conversion efficiency (6.18%) . The enhancement of the solar to power conversion efficiency can be explained in terms of the lag effect of the interfacial recombination dynamics of CuO nanorod-blocking layer on ZnO nanowires. This work shows more economically feasible method to bring down the cost of the nano-hybrid cells and promises for the growth of other important materials to further enhance the solar to power conversion efficiency.     

大面积染料敏化太阳电池的串联阻抗特性研究

在电子扩散微分方程的基础上,研究了染料敏化太阳电池光生电流和光生电压随光照强度不同的变化关系.提出敏化太阳电池串联阻抗功率损耗模型,理论模拟了大面积电池（有效面积>1 cm²）光电转换效率随多孔薄膜有效面积宽度变化的曲线、透明导电基底膜与银栅极的比接触电阻以及在不同入射光强下银栅极体电阻对大面积染料敏化太阳电池光伏性能的影响.结果表明透明导电基底膜的方块电阻和银栅极体电阻对大面积染料敏化太阳电池的性能有很大影响,而这种影响随光强的减弱逐渐减小. 关键词： 染料敏化 太阳电池 串联阻抗 光电转换效率     

Natural dye-based photoelectrode for improvement of solar cell performance

In the present paper, photovoltaic studies of dye-sensitized solar cells (DSSCs) based on betacyanin/TiO₂ and betacyanin/WO₃–TiO₂ have been done. The cell performances were compared through I–V curves and wavelength dependant photocurrent measurements for the two new types of DSSCs. The TiO₂-coated DSSC showed the photovoltage and photocurrent of 300 mV and 4.96 mA/cm², whereas the cell employing WO₃–TiO₂ photoelectrode showed the values 435 mV and 9.86 mA/cm², respectively. The conversion efficiency of TiO₂ based dye-sensitized solar cell was found to be 0.69 %, while WO₃–TiO₂-based cell exhibited a higher conversion efficiency of 2.2 %. The better performance of the WO₃–TiO₂ dye-sensitized solar cell photoelectrode is thought to be due to an inherent energy barrier at the electrode/electrolyte interface leading to the reduced recombination of photoinduced electrons.     

n-ZnO:Al/i-ZnO/n-CdS/p-Cu2ZnSnS4太阳能电池光伏特性的分析

具有高光吸收系数的半导体Cu₂ZnSnS₄ (CZTS)薄膜是一种新型太阳能电池材料. 本文对n-ZnO:Al/i-ZnO/n-CdS/p-CZTS结构的CZTS薄膜太阳能电池进行分析, 讨论CZTS薄膜的掺杂浓度、厚度、缺陷态和CdS薄膜的掺杂浓度、 厚度对太阳能电池转换效率的影响以及太阳能电池的温度特性. 分析表明, CZTS薄膜作为太阳能电池的主要光吸收层, CZTS薄膜的掺杂浓度和厚度的取值对太阳能电池的转换效率有显著影响, CZTS薄膜结构缺陷态的存在会导致太阳能电池性能的下降. CdS缓冲层的掺杂浓度、厚度对太阳能电池光伏特性的影响较小. 经结构参数优化得到的n-ZnO:Al/i-ZnO/n-CdS/p-CZTS薄膜太阳能电池的最佳光 伏特性为开路电压1.127 V、短路电流密度27.39 mA/cm²、填充因子87.5%、 转换效率27.02%,转换效率温度系数为-0.14%/K.     

Vibrational entropy of dislocations in Al

The region nearest to a lattice defect must be described by an atomistic model, while a continuum model suffices further away from the defect. We study such a separation into two regions for an edge dislocation. In particular we focus on the excess defect energy and vibrational entropy, when the dislocation core is described by a cluster of about 500–100?atoms, embedded in a large discrete and relaxed, but static, lattice. The interaction between the atoms is given by a potential of the embedded-atom model type referring to Al. The dynamic matrix of the vibrations in the cluster is fully diagonalized. The excess entropy ΔS near the core has positive and negative contributions, depending on the sign of the local strain. Typically, ΔS/k _B ≈ 2 per atomic repeat length along the dislocation core in fcc Al. In the elastic continuum region far from the dislocation core the excess entropy shows the same logarithmic divergence as the elastic energy. Although the work refers to a specific material and defect type, the results are of a generic nature.     

Influence of the local absorber layer thickness on the performance of ZnO nanorod solar cells

The local absorber layer thickness (d_local) of solar cells with extremely thin absorber was changed between 10 nm and 70 nm. As a model system, ZnO nanorod arrays (electron conductor) with fixed internal surface area coated with In₂S₃ (absorber) and impregnated with CuSCN (transparent hole conductor) were applied. The performance of the small area solar cells depended critically on d_local. The highest short circuit current density was reached for the lowest d_local. In contrast, the highest open circuit voltage was obtained for the highest d_local. A maximum energy conversion efficiency of 3.4% at AM1.5 was achieved. Limiting factors are discussed.(© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photovoltaic devices

The term photovoltaics refers to the process whereby the energy in light is directly converted into useful electrical energy. Sunlight is abundant and free; hence, the conversion of this effectively inexhaustable energy source into electrical energy by photovoltaics is of considerable interest. Photovoltaic devices for solar energy conversion (solar cells) are the subject of this article.     

Enhancement of silicon solar cell performances due to light trapping by colloidal metal nanoparticles

Photovoltaics is the most promising technology for the future of green energy production. To fully realize the potential use of photovoltaic technology, low manufacturing cost and high working photoconversion efficiency must be obtained. Light trapping by metal nanoparticles is an attractive strategy in thin film as well as in bulk silicon solar cells aimed to confine light within the active layer to promote the photon absorption and therefore achieving higher efficiency. In this paper, we tested the deposition of silver and gold nanoparticles on bulk silicon solar cells by colloidal technique in order to enhance their photovoltaic conversion efficiency by means of Plasmonic Light Scattering by metal nanoparticles. The feasible Plasmonic Light Scattering related enhancement was examined using spectral response and I–V measurements. Relative increases of the total delivered power under simulated solar irradiation were observed for cells both with and without antireflection coating using silver and gold nanoparticles.     

19.4%‐efficient large‐area fully screen‐printed silicon solar cells

We demonstrate industrially feasible large‐area solar cells with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 × 125 mm² p‐type 2–3 Ω cm boron‐doped Czochralski silicon wafers. Front and rear metal contacts are fabricated by screen‐printing of silver and aluminum paste and firing in a conventional belt furnace. We implement two different dielectric rear surface passivation stacks: (i) a thermally grown silicon dioxide/silicon nitride stack and (ii) an atomic‐layer‐deposited aluminum oxide/silicon nitride stack. The dielectrics at the rear result in a decreased surface recombination velocity of S_rear = 70 cm/s and 80 cm/s, and an increased internal IR reflectance of up to 91% corresponding to an improved J_sc of up to 38.9 mA/cm² and V_oc of up to 664 mV. We observe an increase in cell efficiency of 0.8% absolute for the cells compared to 18.6% efficient reference solar cells featuring a full‐area aluminum back surface field. To our knowledge, the energy conversion efficiency of 19.4% is the best value reported so far for large area screen‐printed solar cells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrochemical properties of TiO2 nanoparticle/nanorod composite photoanode for dye-sensitized solar cells

A unique composite of TiO₂ nanoparticles (NPs) and nanorods (NRs) has been used to fabricate a photoelectrode for developing dye-sensitized solar cells (DSSCs) with higher sensitivity. The TiO₂ nanorods were synthesized using a mechanical process, in which electrospun TiO₂ nanofibers was grinded in a controlled way to obtain uniform size distribution. The characteristics of electron transport, recombination lifetime and charge collection were investigated by intensity-modulated photocurrent spectroscopy (IMPS) and intensity-modulated photovoltage spectroscopy (IMVS). Photoelectrodes prepared with the composites of NRs and NPs showed significant improvements in electron transportation compared to only NP photoelectrodes, which would enhance the photovoltaic performance of DSSCs. IMPS and IMVS measurements show that fast electron transport and slightly decreased recombination lifetime resulted in the improvement of efficiency. The highest energy conversion efficiency obtained from the photoelectrodes fabricated with the as-prepared rutile TiO₂ nanofibers at 5 wt% NR content was up to 6.1% under AM1.5G solar illumination. The results demonstrate that the composite nanostructure can take advantage of both the fast electron transport of the nanorods and the high surface area of the nanoparticles.     

A luminescent solar concentrator with 7.1% power conversion efficiency

The Luminescent Solar Concentrator (LSC) consists of a transparent polymer plate, containing luminescent particles. Solar cells are connected to one or more edges of the polymer plate. Incident light is absorbed by the luminescent particles and re‐emitted. Part of the light emitted by the luminescent particles is guided towards the solar cells by total internal reflection. Since the edge area is smaller than the receiving one, this allows for concentration of sunlight without the need for solar tracking. External Quantum Efficiency (EQE) and current–voltage (I –V) measurements were performed on LSC devices with multicrystalline silicon (mc‐Si) or GaAs cells attached to the sides. The best result was obtained for an LSC with four GaAs cells. The power conversion efficiency of this device, as measured at European Solar Test Installation laboratories, was 7.1% (geometrical concentration of a factor 2.5). With one GaAs cell attached to one edge only, the power efficiency was still as high as 4.6% (geometrical concentration of a factor 10). To our knowledge these efficiencies are among the highest reported for the LSC. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

光栅减反层太阳能电池光电转换效率的研究

运用时域有限差分方法,研究了光栅减反层结构对太阳能电池光电转换效率及储能效果的影响.具体从光栅形状、高度以及光栅表面金属薄膜厚度出发.结果表明经光栅减反层优化表面结构的太阳能电池的光电转换效率显著增大,储能效果大大得到提升.尤其是三角形光栅太阳能电池.随着镀层厚度的增加,储能效果增加,但当薄膜厚度过厚时,储能效果反而降低.     

Controlled synthesis of TiO2-B nanowires and nanoparticles for dye-sensitized solar cells

Controllable synthesis of the TiO₂-B nanowires (NWs) and nanoparticles (NPs) had been achieved via a facile hydrothermal route, respectively, only by tuning the solution volume. The dye-sensitized solar cells prototypes had been fabricated using TiO₂-B NW and NP electrodes, respectively. The TiO₂-B NP cells had higher photocurrent and photoelectrical conversion efficiency than the TiO₂-B NW cells though the latter exhibited larger photovoltage compared to the former. The key factors such as the photogenerated electron injection drive force, surface defects and the interfacial charge transfer, which determined the photoelectrical properties, had been systematically researched with the surface photovoltage spectra (SPS) and the electrochemical impedance spectra (EIS). The SPS proved that there was larger photoelectron injection drive force in TiO₂-B NP photoelectrode than that in NW photoelectrode. And the electrochemical impedance spectra (EIS) revealed that TiO₂-B NP cells had faster interface charge transfer compared to TiO₂-B NW cells. Both proved that NP cells had the higher photocurrents.     

Investigation of Cu2ZnSnS4 thin-film solar cells with carrier concentration gradient

To investigate the effect of carrier concentration gradient on Cu₂ZnSnS₄ (CZTS) thin-film solar cells, the properties of CZTS solar cells were studied by numerical method. The photovoltaic performances of carrier concentration gradient CZTS solar cells were calculated by the solutions of Poisson's equation, continuity equation, and current density equation using AFors-Het v2.4 program. The carrier concentration gradient was changed to analyze its effect. Compared with CZTS solar cells without carrier concentration gradient, the photovoltaic performances of CZTS solar cells can be enhanced by using carrier concentration gradient absorber. The carrier concentration gradient can extend the distribution region of built-in electric field, which is beneficial to the drift of photo-generated carriers. However, the carrier concentration gradient also affects the recombination and series resistances of solar cells. When the defect density of CZTS layer is high, the photo-generated carriers are affected significantly by recombination, resulting in slight effect of carrier concentration gradient. Therefore, the defect density should be reduced to enhance the effect of carrier concentration gradient on improving conversion efficiency of CZTS thin-film solar cells.     

Zinc oxide nanostructures for applications as ethanol sensors and dye-sensitized solar cells

ZnO nanostructures were prepared by thermal oxidation technique for applying as ethanol sensors and dye-sensitized solar cells. To improve sensitivity of the sensor based on ZnO nanostructures, gold doping was performed in ZnO nanostructures. Gold-doped with 0%, 5%, and 10% by weight were investigated. The improvement of sensor sensitivity toward ethanol due to gold doping was observed at entire operating temperature and ethanol concentration. The sensitivity up to 145 was obtained for 10% Au-doped ZnO sensor. This can be explained by an increase of the quantity of oxygen ion due to catalytic effect of gold. Also, it was found that oxygen ion species at the surface of the Au-doped ZnO sensor remained O²⁻ as pure ZnO sensor. For dye-sensitized solar cell application, the dye-sensitized solar cell structure based on ZnO as a photoelectrode was FTO/ZnO/Eosin-Y/electrolyte/Pt counter electrode. ZnO with different morphologies of nanobelt, nano-tetrapod, and powder were investigated. It was found that DSSCs with ZnO powder showed higher photocurrent, photovoltage and overall energy conversion efficiencies than that of ZnO nanobelt and ZnO nano-tetrapod. The best results of DSSCs were the short circuit current (J_sc) of 1.25 mA/cm², the open circuit voltage (V_oc) of 0.45 V, the fill factor (FF) of 0.65 and the overall energy conversion efficiency (η) of 0.68%.     

Characteristic material parameters of CIGS solar cell related with device performance

CIGS solar cells with power conversion efficiency (PCE) in the range of 1.82%–12.30% were obtained by using two-step process, and were further analyzed through various measurement techniques. Material parameters showed diverse values and some trends depending on the device performance. The lower performance device showed small integrated PL intensity, short minority life time, larger defect density and lower activation energy, whereas the higher performance device showed opposite values. We investigated relationship between material parameters and PCE of solar cells, and found that some physical parameters such as integrated PL intensity, minority life time, defect density, and difference between band gap and activation energy (E_g-E_a), which all reflect defect states in bulk and at pn interface, are strongly related with PCE and would be used as a good indicator to evaluate device performance quickly.     

GaN-nanowire-based dye-sensitized solar cells

GaN nanowires typically exhibit high electron mobility and excellent chemical stability. However, stability of GaN is detrimental for successful attachment of dye molecules and its application in dye-sensitized solar cells (DSSCs). Here we demonstrate DSSCs based on GaN/gallium oxide and GaN/TiO _x core–shell structures, and we show that coating of GaN nanowires with a TiO _x shell significantly increases dye adsorption and consequently photovoltaic performance. The best cells exhibited short circuit current density of 1.83 mA/cm² and power conversion efficiency of 0.44% under AM 1.5 simulated solar illumination.     

Assessment of the illumination dependency of Al2O3 and SiO2 rear‐passivated p‐type silicon solar cells

This Letter discusses an important difference between positively charged SiO₂ and negatively charged Al₂O₃ rear‐passivated p‐type Si solar cells: their illumination level dependency. For positively charged SiO₂ rear‐passivated p‐type Si solar cells, a loss in short circuit current (J_SC) and open circuit voltage (V_OC) as a function of illumination level is mainly caused by parasitic shunting and a decrease in surface recombination, respectively. Hence, the relative loss in cell conversion efficiency, J_SC, and V_OC as a function of the illumination level for SiO₂ compared to Al₂O₃ rear‐passivated p‐type Si solar cells has been measured and discussed. Subsequently, an exponential decay fit of the loss in cell efficiency is applied in order to estimate the difference in the energy output for both cell types in three different territories: Belgium (EU), Seattle and Austin (US). The observed trends in the difference in energy output between both cells, as a function of time of the year and region, are as expected and discussed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)