Effect of antimony dopants on the sorption properties of SnO2

The effects of antimony modifying additive (0.15—0.50 at.% Sb) on the electrophysical and sorption properties of SnO₂ powders with a well developed specific surface were studied in the temperature range of 25—250 °C. Small amounts of antimony (0.15 at.%) increase the conductivity of SnO₂ containing SO₂ and CO chemisorbed in the temperature range of 25—100 °C. This makes this composition promising as a sensitive element of gas sensors.     

Ionic conduction of a high-temperature modification of Lu<Subscript>2</Subscript>Ti<Subscript>2</Subscript>O<Subscript>7</Subscript>

A nanoceramic product of the composition Lu₂Ti₂O₇ is synthesized by a coprecipitation method with a subsequent sublimation drying and an annealing at 650–1650°C. The conduction of Lu₂Ti₂O₇ synthesized at 1650°C is ionic (10^–3 S cm^–1 at 800°C). Thus, a new material with a high ionic conduction has been discovered. The ordering in Lu₂Ti₂O₇ is studied by methods of RFA, RSA, IK spectroscopy, electron microscopy, and impedance spectroscopy. The existence of a low-temperature phase transition fluorite-pyrochlore at 800°C and a high-temperature conversion order-disorder at 1650°C are established.Translated from Elektrokhimiya, Vol. 41, No. 3, 2005, pp. 298–303.Original Russian Text Copyright © 2005 by Shlyakhtina, Ukshe, Shcherbakova.     

Low-temperature processing of sol-gel derived Pb(Zr,Ti)O<Subscript>3</Subscript> thick films using CO<Subscript>2</Subscript> laser annealing

Fabrication of ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thick films on a Pt/Ti/SiO₂/Si substrate using powder-mixing sol-gel spin coating and continuous wave CO₂ laser annealing technique to treat the specimens with at a relatively low temperature was investigated in the present work. PZT fine powders were prepared by drying and pyrolysis of sol-gel solutions and calcined at temperatures from 400 to 750°C. After fine powder-containing sol-gel solutions were spin-coated on a substrate and pyrolyzed, CO₂ laser annealing was carried out to heat treat the specimens. The results show that laser annealing provides an extremely efficient way to crystallize the materials, but an amorphous phase may also form in the case of overheating. Thicker films absorb laser energy more effectively and therefore melt at shorter periods, implying a significant volume effect. A film with thickness of 1 μm shows cracks and rough surface morphology and it was difficult to obtain acceptable electrical properties, indicating importance of controlling interfacial stress and choosing appropriate size of the mixing powders. On the other hand, a thick film of 5 μm annealed at 100 W/cm² for 15 s exhibits excellent properties (P _r = 36.1 μC/cm², E _c = 19.66 kV/cm). Films of 10 μm form a melting zone at the surface and a non-crystallized bottom layer easily at an energy density of 100 W/cm², showing poor electrical properties. Besides, porosity and electrical properties of thick films can be controlled using appropriate processing parameters, suggesting that CO₂ laser annealing of modified sol-gel films is suitable for fabricating films of low dielectric constants and high crystallinity.     

Eu<Superscript>3+</Superscript>-fluorescence properties in nano-crystallized SnO<Subscript>2</Subscript>-SiO<Subscript>2</Subscript> glass-ceramics

Fluorescence and spectral hole burning properties of Eu³⁺ ions were studied in nanocrystals-precipitated SnO₂-SiO₂ glasses. The glasses were prepared to contain various amount of Eu₂O₃ using the sol-gel method, in which SnO₂ nanocrystals were precipitated by heating in air. In the glasses containing Eu₂O₃ less than 1%, the Eu³⁺ ions were preferentially doped in the SnO₂ nanocrystals and their fluorescence intensities were enhanced by the energy transfer due to the recombination of electrons and holes excited in SnO₂ crystals. The SnO₂ nanocrystals-precipitated glasses exhibited the persistent spectral holes with the depth of ∼25% of the total fluorescence intensities of the Eu³⁺ ions. With the increasing Eu₂O₃ concentration, the amount of SnO₂ nanocrystals decreased and the Sn⁴⁺ ions formed the random glass structure together with the silica network. This structure change induced the fluorescence intensities and the hole depth to decrease.     

High visible light-driven photocatalytic activity of large surface area Cu doped SnO<Subscript>2</Subscript> nanorods synthesized by novel one-step microwave irradiation method

The paper investigates the structural, optical and photocatalytic activity of large surface area single crystalline copper (Cu) doped SnO₂ nanorods (NRs) synthesized by a novel one-step microwave irradiation method. Powder X-ray diffraction (XRD) analysis confirms that both pure and Cu doped SnO₂ are tetragonal rutile type structure (space group P42/mnm) formed during the microwave process within 10 min without any post annealing treatment. Transmission electron microscopy (TEM) reveals that the as synthesized Cu doped SnO₂ samples exhibited rod-like shape and the length was less than 80 nm and diameter was about few nanometers. Typical selected-area electron diffraction (SAED) pattern indicates that, the growth direction of Cu–SnO₂ nanorod is along [110] direction. The variety of phonon interaction in the pure and Cu doped SnO₂ is observed by Raman spectroscopy. Electron paramagnetic resonance and X-ray photoelectron spectroscopy (XPS) confirms that the presence of copper and tin as Cu²⁺ and Sn⁴⁺ in state, respectively. The photocatalytic activity was monitored via the degradation of methylene blue (MB) and Rhodamine B (RhB) dyes and the Cu–SnO₂ showed better photocatalytic activity than that of pure SnO₂. This could be attributed to the effective electron–hole separation by surface modification.     

Comparing the electrochemical properties of pure phase Zn<Subscript>2</Subscript>SnO<Subscript>4</Subscript> and composite Zn<Subscript>2</Subscript>SnO<Subscript>4</Subscript>/C

Compound Zn₂SnO₄ was synthesized by a hydrothermal method in which SnCl₄ · 5H₂O, ZnCl₂ and N₂H₄ · H₂O were used as reactants. Composite Zn₂SnO₄/C was then synthesized through a carbothermic reduction process using the as-prepared Zn₂SnO₄ and glucose as reactants. Comparing to the pure Zn₂SnO₄, some improved electrochemical properties were obtained for composite Zn₂SnO₄/C. When doped with 15% glucose, the composite Zn₂SnO₄/C showed the best electrochemical performance. Its first discharge capacity was about 1500 mA h g⁻¹, with a capacity retain of 500 mA h g⁻¹ in the 40th cycle at a constant current density of 100 mA/g in the voltage range of 0.05–3.0 V. There were also some differences displayed in their cyclic voltammogram.     

Microstructure and electrical-optical properties of cesium tungsten oxides synthesized by solvothermal reaction followed by ammonia annealing

Cesium tungsten oxides (Cs_xWO₃) were synthesized by solvothermal reactions using ethanol and 57.1 vol% ethanol aqueous solution at 200 °C for 12 h, and the effects of post annealing in ammonia atmosphere on the microstructure and electrical-optical properties were investigated. Agglomerated particles consisting of disk-like nanoparticles and nanorods of Cs_xWO₃ were formed in the pure ethanol and ethanol aqueous solutions, respectively. The samples retained the original morphology and crystallinity after annealing in ammonia atmosphere up to 500 °C, while a small amount of nitrogen ion were incorporated in the lattice. The as-prepared Cs_xWO₃ sample showed excellent near infrared (NIR) light shielding ability as well as high transparency in the visible light region. The electrical resistivity of the pressed pellets of the powders prepared in pure ethanol and 57.1 vol% ethanol aqueous solution greatly decreased after ammonia annealing at 500 °C, i.e., from 734 to 31.5 and 231 to 3.58 Ω cm, respectively.     

Transport coefficients of titanium-doped Sb2Te3 single crystals

Titanium-doped single crystals (c_Ti=0-2×10²⁰ atoms cm⁻³) were prepared from the elements Sb, Ti, and Te of 5 N purity by a modified Bridgman method. The obtained crystals were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity in the temperature range of 3-300 K. It was observed that with an increasing Ti content in the samples the electrical resistivity, the Hall coefficient and the Seebeck coefficient increase. This means that the incorporation of Ti atoms into the Sb₂Te₃ crystal structure results in a decrease in the concentration of holes in the doped crystals. For the explanation of the observed effect a model of defects in the crystals is proposed. The data of the lattice thermal conductivity were fitted well assuming that phonons scatter on boundaries, point defects, charge carriers, and other phonons.     

Preparation and photocatalytic activity of ZnO/TiO2/SnO2 mixture

ZnO/TiO₂/SnO₂ mixture was prepared by mixing its component solid oxides ZnO, TiO₂ and SnO₂ in the molar ratio of 4?1?1, followed by calcining the solid mixture at 200-1300 °C. The products and solid-state reaction process during the calcinations were characterized with powder X-ray diffraction (XRD), thermogravimetric and differential thermal analysis (TG-DTA), UV-Vis diffuse reflectance spectroscopy (UV-Vis DRS) and Brunauer-Emmett-Teller measurement of specific surface area. Neither solid-state reaction nor change of crystal phase composition took place among the ZnO, TiO₂ and SnO₂ powders on the calcinations up to 600 °C. However, formation of the inverse spinel Zn₂TiO₄ and Zn₂SnO₄ was detected at 700-900 and 1100-1200 °C, respectively. Further increase of the calcination temperature enabled the mixture to form a single-phase solid solution Zn₂Ti_0.5Sn_0.5O₄ with an inverse spinel structure in the space group of . The ZnO/TiO₂/SnO₂ mixture was photocatalytically active for the degradation of methyl orange in water; its photocatalytic mass activity was 16.4 times that of SnO₂, 2.0 times that of TiO₂, and 0.92 times that of ZnO after calcination at 500 °C for 2 h. But, the mass activity of the mixture decreased with increasing the calcination temperature at above 700 °C because of the formation of the photoinactive Zn₂TiO₄, Zn₂SnO₄ and Zn₂Ti_0.5Sn_0.5O₄. The sample became completely inert for the photocatalysis after prolonged calcination at 1300 °C (42 h), since all of the active component oxides were reacted to form the solid solution Zn₂Ti_0.5Sn_0.5O₄ with no photocatalytic activity.     

Preparation and selected properties of pigments on base of Ln-doped CaSnO<Subscript>3</Subscript>

Inorganic pigments containing lanthanides based on orthorhombic perovskite structure of CaSnO₃ have been prepared by solid state reaction of CaCO₃, SnO₂ and lanthanide oxides (Tb₄O₇, Pr₆O₁₁, CeO₂). The TG-DTA analysis indicates the formation of Ca-stannates around of temperature 1200°C, but from the pigmentary — application point of view, it is better to synthesize the product at higher temperature (1400 or 1500°C). The resultant materials were characterised by XRD, particle size distribution and measurement of colour properties. The doping of Ca-stannates by ions of rare earth elements (Tb, Pr, Ce) brings the production of two-and three-phase systems. The most interesting colour properties provided the stannate doped by ions of terbium and cerium and synthesized by heating at temperature 1400°C. The pigment has reddish brown colour hue.     

Electrochemical properties of nano-crystalline LiNi<Subscript>0.5</Subscript>Mn<Subscript>1.5</Subscript>O<Subscript>4</Subscript> synthesized by polymer-pyrolysis method

LiNi_0.5Mn_1.5O₄ powders were prepared through polymer-pyrolysis method. XRD and TEM analysis indicated that the pure spinel structure was formed at around 450 °C due to the very homogeneous intermixing of cations at the atomic scale in the starting precursor in this method, while the well-defined octahedral crystals appeared at a relatively high calcination temperature of 900 °C with a uniform particle size of about 100 nm. When cycled between 3.5 and 4.9 V at a current density of 50 mA/g, the as prepared LiNi_0.5Mn_1.5O₄ delivered an initial discharge capacity of 112.9 mAh/g and demonstrated an excellent cyclability with 97.3% capacity retentive after 50 cycles.     

Temperature programmed desorption of F-doped SnO<Subscript>2</Subscript> films deposited by inverted pyrosol technique

Fluorine-doped tin dioxide (FTO) films were deposited on silicon wafers by inverted pyrosol technique using solutions with different doping concentration (F/Sn=0.00, 0.12, 0.75 and 2.50). The physical and electrical properties of the deposited films were analyzed by SEM, XRF, resistivity measurement by four-point-probe method and Hall coefficient measurement by van der Pauw method. The electrical properties showed that the FTO film deposited using the solution with F/Sn=0.75 gave a lowest resistivity of 3.2·10^–4 ohm cm. The FTO films were analyzed by temperature programmed desorption (TPD). Evolved gases from the heated specimens were detected using a quadruple mass analyzer for mass fragments m/z, 1(H⁺), 2(H₂ ⁺), 12(C⁺), 14(N⁺), 15(CH₃ ⁺), 16(O⁺), 17(OH⁺ or NH₃ ⁺), 18(H₂O⁺ or NH₄ ⁺), 19(F⁺), 20(HF⁺), 28(CO⁺ or N₂ ⁺), 32(O₂ ⁺), 37(NH₄F⁺), 44(CO₂ ⁺), 120(Sn⁺), 136(SnO⁺) and 152(SnO₂ ⁺). The majority of evolved gases from all FTO films were water vapor, carbon monoxide and carbon dioxide. Fluorine (m/z 19) was detected only in doped films and its intensity was very strong for highly-doped films at temperature above 400°C.     

Growth and some properties of Sc2AlB6 crystal obtained from the solution in aluminum melt

Crystals of Sc₂AlB₆ were grown using scandium oxide and elemental boron as starting materials in a self-component aluminum solution under an argon atmosphere. The growth conditions for obtaining single crystals of relatively large size were investigated. Sc₂AlB₆ single crystals were obtained in the form of prisms extending in the b-axis direction. The largest Sc₂AlB₆ crystals prepared had maximum dimensions of about 0.4×0.4×4.2 mm³. The values of the Vickers microhardness and the electrical resistivity of Sc₂AlB₆ crystals are 12.7±0.8 GPa and 43±8 μΩ cm, respectively. The oxidation of Sc₂AlB₆ crystals starts at about 773°C, and the weight gain after TG determination is 12.9 mass% at 1200°C. The oxidation products of Sc₂AlB₆ crystals could not determined.     

Hydrothermal synthesis of (Fe,N) co-doped TiO<Subscript>2</Subscript> powders and their photocatalytic properties under visible light irradiation

(Fe, N) co-doped titanium dioxide powders have been prepared by a quick, low-temperature hydrothermal method using TiOSO₄, CO(NH₂)₂, Fe(NO₃)₃, and CN₃H₅ · HCl as starting materials. The synthesized powders were characterized by XRD, TEM, BET, XPS, and UV–Vis spectroscopy. Experimental results show that the as-synthesized TiO₂ powders are present as the anatase phase and that the N and Fe ions have been doped into the TiO₂ lattice. The specific surface area of the powders is 167.8 m²/g by the BET method and the mean grain size is about 11 nm, calculated by Scherrer’s formula. UV–Vis absorption spectra show that the edge of the photon absorption has been red-shifted up to 605 nm. The doped titanium dioxide powders had excellent photocatalytic activity during the process of photo-degradation of formaldehyde and some TVOC gases under visible light irradiation.     

Kilogram‐Scale Production of SnO2 Yolk–Shell Powders by a Spray‐Drying Process Using Dextrin as Carbon Source and Drying Additive

A simple and general method for the large‐scale production of yolk–shell powders with various compositions by a spray‐drying process is reported. Metal salt/dextrin composite powders with a spherical and dense structure were obtained by spray drying and transformed into yolk–shell powders by simple combustion in air. Dextrin plays a key role in the preparation of precursor powders for fabricating yolk–shell powders by spray drying. Droplets containing metal salts and dextrin show good drying characteristics even in a severe environment of high humidity. Sucrose, glucose, and polyvinylpyrrolidone are widely used as carbon sources in the preparation of metal oxide/carbon composite powders; however, they are not appropriate for large‐scale spray‐drying processes because of their caramelization properties and adherence to the surface of the spray dryer. SnO₂ yolk–shell powders were studied as the first target material in the spray‐drying process. Combustion of tin oxalate/dextrin composite powders at 600 °C in air produced single‐shelled SnO₂ yolk–shell powders with the configuration SnO₂@void@SnO₂. The SnO₂ yolk–shell powders prepared by the simple spray‐drying process showed superior electrochemical properties, even at high current densities. The discharge capacities of the SnO₂ yolk–shell powders at a current density of 2000 mA g^?1 were 645 and 570 mA h g^?1 for the second and 100th cycles, respectively; the corresponding capacity retention measured for the second cycle was 88 %.     

Study on the service life and deactivation mechanism of Ti/SnO<Subscript>2</Subscript>-Sb electrode by physical and electrochemical methods

The Sb doped tin dioxide electrode (Sb-doped SnO₂) inter-layer was prepared using electroposition layer-by-layer onto a titanium plate, and the Sb-doped SnO₂ surface catalytic layer (Ti/SnO₂-Sb) was prepared using thermo-decomposition method. Accelerated service life tests were carried out in 0.5 M H₂SO₄ solution and 1.0 M NaOH solution, respectively. The deactivation mechanism of the electrodes is studied using oxygen evolution reaction (OER) as the reaction mode. Cyclic voltammetry test showed that the electrodes after accelerated life tests had no catalytic-oxidizing activity upon phenol. Electrochemical impedance spectroscopy (EIS) analysis exhibited that the membrane resistance of the deactivated electrode increases obviously in 0.5 M H₂SO₄ solution and 1.0 M NaOH solution, with the values of 1231 and 90.6 Ω, respectively. The structure, morphology and the content of the fresh and deactivated electrode were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray detector (EDX). This suggested that the Ti content on the electrode surface increases after deactivation, and TiO₂ membrane with poor conductivity is grown on the electrode surface.     

Application of Alumina Aerogels as Catalysts

Al₂O₃ gels prepared by hydrolysis of Al-alkoxide were applied as catalysts for NO reduction by hydrocarbon. Xerogels were obtained by drying at 90°C, for 24 h, in air. Aerogels were prepared by supercritical drying of the wet gels in ethanol, using an autoclave. The catalyst activity of the gels for NO reduction with C₃H₆ as determined at 200–600°C in a fixed bed flow reactor. NO conversion to N₂ was about 60% at 550°C with both catalysts, and at 600°C it was better with the aerogel than with the xerogel. The specific surface area of the xerogel, which was larger than that of the aerogel as-dried, decreased to 1/3 by annealing at >500°C. However, the surface area of the aerogel hardly changed by annealing at temperatures up to 700°C. The bimodal pore size distribution of the aerogel hardly changed by annealing, too. The microstructure of the aerogels is stable at high temperatures, and they are better catalysts at high temperatures.     

Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> powders by the complex polymerization method: synthesis,characterization and morphology

Lanthanum-modified bismuth titanate (Bi_3.25La_0.75Ti₃O₁₂, BLTO) powders were prepared by the complex polymerization method. The structure and morphology of BLTO powders were investigated by X-ray diffraction and scanning electron microscopy. The complexation of citric acid with the metallic cations was detected by Fourier transformed infrared (FT-IR). The thermal analyses of obtained gels were investigated by differential thermal gravimetric (DTG). The pure and normally stoichiometric phase of BLTO powders could be obtained at relatively low temperature of 550–700 °C even if the bismuth content is not excess in the starting precursors, while the secondary phase could be detected at lower and higher calcination temperatures. The shape of the BLTO grains is similarly to platelet in Bi-layer structure and stoichiometry BLTO was detected by the analysis of energy dispersive spectrometry.     

Conductivity of SnO<Subscript>2</Subscript>-In<Subscript>2</Subscript>O<Subscript>3</Subscript> nanocrystalline composite films

The conductivity of films consisting of a mixture of SnO₂ and In₂O₃ nanocrystals at 200–500°C was studied. Based on the experimental data, it was assumed that in films containing less than 20 wt % In₂O₃, the current flows along SnO₂ nanocrystals. A model of conductivity in these films is presented; it includes an electron transfer from In₂O₃ to SnO₂, which forms positively charged In₂O₃ nanocrystals that contact the negatively charged SnO₂ nanocrystals. In the presence of In₂O₃ nanocrystals, the activation energy of the electron transfer between SnO₂ nanocrystals decreased substantially because of a decrease in the barrier of electron transfer between SnO₂ crystals under the action of the negative charge. As a result, a percolation cluster of charged SnO₂ crystals formed. At high contents of In₂O₃ (over 20 wt %), the conductivity increased dramatically. The curve of the temperature dependence of conductivity changed because of the appearance of a percolation cluster of In₂O₃ nanocrystals, in which the current passed. The conductivity of a mixed film of this kind differed from that of the nanocrystalline film of pure In₂O₃.     

Microstructure and properties of sol-gel derived Pb(Zr<Subscript>0.3</Subscript>Ti<Subscript>0.7</Subscript>)O<Subscript>3</Subscript> thin films on GaN/sapphire for nanoelectromechanical systems

Highly (111) oriented, phase-pure perovskite Pb(Zr_0.3Ti_0.7)O₃ (or PZT 30/70) thin films were deposited on single-crystal, (0001) wurtzite GaN/sapphire substrates using the sol-gel process and rapid thermal annealing. The phase, crystallinity, and stoichiometry of annealed PZT films were evaluated by X-ray diffraction and Rutherford backscattering spectroscopy. The atomic force microscopy revealed a smooth PZT surface (rms roughness ∼1.5 nm) with striations and undulations possibly influenced by the nature of the underlying GaN surface. The cross-sectional field-emission scanning electron microscopic images indicated a sharper PZT/GaN interface compared to that of sol-gel derived PZT on (111) Pt/TiO₂/SiO₂/(100) Si substrates. The capacitance-voltage (C-V) characteristics for PZT in the Pt/PZT/GaN (metal-ferroelectric-semiconductor or MFS) configuration were evaluated as a function of annealing temperature and applied voltage. The observed C-V hysteresis stemmed from trapped charge at defect sites within PZT. Also, the lower capacitance density (C/A = 0.35 μF/cm², where A is the area of an electrode) and remnant polarization (P _r ∼ 4 μC/cm²) for PZT in the MFS configuration, compared to the values for PZT in the MFM configuration (Pt/PZT/Pt), were attributed to the high depolarization field within PZT.