Influence of the ordering of carbon vacancies on the electronic properties of TiC0.625

Annealing of f.c.c. TiC_0.625 for 10 days between 780 and 750°C leads to a trigonal superstructure by ordering of carbon vacancies. Long-range ordering decreases slightly the residual electrical resistivity ϱ(1.6 K) and the electronic specific heat and increases the temperature coefficient of the resistivity dϱ/dT between 100 and 300 K. A minimum in ϱ(T), more apparent in the disordered samples (around 65 K) is attributed to the scattering of electrons by the strong atomic disorder.     

Notes on number density fluctuations and the scattering cross section for electromagnetic waves scattered from a thermal nonequilibrium plasma

The scattering cross section and the Doppler spectrum for electromagnetic waves scattered by the electron density fluctuations of a plasma, where the mean kinetic temperature of the electronsT _e may differ from that of the ionsT _i , has been obtained among others byFejer, Buneman, Renau, Camnitz andFlood, andSalpeter. These authors use different methods of approach to calculate the autocovariance of the electron number-density fluctuations (from the mean) and then obtain the scattering cross section. Because of the differing results, the methods, concepts, and derivations of the scattering cross section are carefully examined in this paper. It is shown that the short-time dynamical considerations incorporated in the formulation of the statistical theory of the electron number-density fluctuations of the plasma as used by several authors (for instanceFejer, Buneman, Salpeter,) leads to results of limited validity. In addition, a fundamental error in calculating the electron density fluctuations leads these latter authors to an incorrect scattering cross section. The theory of scattering of electromagnetic waves from a plasma, where the electrons arenot in thermal equilibrium with the ions but statistical equilibrium exists, is developed in a general way. The covariance of the number-density fluctuations from the mean of the charged species of the plasma and the scattering cross sectionσ(q) are obtained. In particular it is shown that for a wavelength λ much greater than the effective Debye lengthd, the backscattering cross section increases and approaches complete incoherent scattering asT _e /T _i increases. This result is explained by noting that in the case of thermal equilibrium, the predicted value of the back-scattering cross section is smaller than that of the backscattering cross section from completely uncorrelated electron density fluctuations because the electrostatic interaction between the charged particles of the plasma, which is a function ofT _e andT _i , introduces a certain amount of organization in otherwise completely uncorrelated electron density fluctuations. When the mean temperature of the electrons increases relative to that of the ions, the organization introduced in the fluctuations diminishes because of the increasing thermal agitation of the electrons relative to that of the ions, and the backscattering process approaches that of incoherent backscattering (Thomson-type scattering). The spectrum function of incoherent scattering of electromagnetic waves from a nonequilibrium plasma is obtained and some cases of current interest are plotted.     

Electron impact ionization and excitation rate coefficients in the negative glow region of a glow discharge

Some easy to use reasonable approximations for electron impact rate coefficients have been considered. The most important rate coefficients for electron collisions in noble gases are electron-neutral ionization and electron impact excitation. Electron-neutral ionization besides electron impact excitation of some states of the argon and helium atom in direct current (dc) glow discharge plasma has been calculated. The plasma parameters of electron are significant factors for computing the rate coefficients. We present first results of probe diagnostic that includes the double probe measurements of the plasma parameters, namely, electron temperature (T_e) and electron density (n_e). Electron properties obtained from the double probe characteristic curves including T_e and n_e as well as the calculated rate coefficients (ionization and excitation) were studied as a function of the axial distance from the cathode while the discharge operating parameters of voltage and pressure were varied. Two regions of the glow discharge were investigated: cathode fall region and negative glow. Particular emphasis was placed on the negative glow region.     

Effect of correlation on electronic properties of NiO: A study from dynamical mean field theory

In order to describe a typical strongly correlated insulator NiO at electronic level, we perform a first principles calculation for temperature effect on electronic properties of NiO using a many-body method merging local density approximation (LDA) with dynamical mean field theory, so called the LDA+DMFT scheme. Band gap and density of states (DOS) are in good agreement with available experimental data and theoretical calculations, and Ni d-e_g and d-t_2g components both exhibit insulating character. Calculated hybridization functions indicate that Ni d-e_g states strongly hybrid with O p states at T = 58 K, 116 K, 145 K, 232 K and 464 K. In order to compare with experimental angle-resolved photoemission spectrum (ARPES), we also calculate momentum-resolved electronic spectrum function, which is established that obvious electronic excitation mainly arises from Ni d-t_2g states at temperature T = 232 K, and the spectrum functions between −0.5 eV and 0.0 eV are almost symmetric about certain k points. Finally, we analyze the effect of temperature on electronic properties of NiO by carrying out LDA+DMFT calculations at T = 58 K, 116 K, 145 K, 232 K and 464 K, respectively. Results show that temperature mainly influences the valence states of spectrum function and hybridization function, in particular high-lying states close to Fermi level. Electronic excitation distributions and spectrum characters in electronic spectrum function are also discussed.     

Rydberg states in the D layer of the atmosphere and the GPS positioning errors

The noncoherent radiation in the frequency range 0.8–8.0 (GHz) formed in the D layer of the ionosphere at high solar activity due to transitions between Rydberg states is considered. The emitting layer thickness located 80–110 km above ground surface is estimated. A complicated irregular behavior of the frequency dependence of the radiation intensity for different values of å electron concentration n _e and temperature T _e due to different characteristics of electron scattering on the nitrogen and oxygen molecules is revealed. The dependences of the flux power of UHF radiation from the D layer in the indicated frequency range on the concentration and temperature of free electrons are calculated. It is shown that, at a frequency of ν = 1.44 GHz, the UHF radiation spectrum features a characteristic waist point, the position of which is almost independent of the electron temperature T _e ; i.e., a one-parameter dependence of the power flux on the electron n _e density takes place. In the frequency range of 4.0–8.0 GHz, the radiation spectrum exhibits a family of curves that, for each value of n _e and a wide range of T _e , give rise to a relationship known as the “bottleneck.” It was found that, with increasing frequency, the bottleneck moves upwards along a curve described by a quadratic dependence on the radiation frequency. For a frequency of ～5 GHz, and a certain range of temperature T _e and electron concentration within 5 · 10³ cm^?3 < n _e < 2 · 10⁴ cm^?3, an almost linear dependence of the UHF radiation power on n _e is observed. A comparative analysis of GPS signal delays at frequencies ν _f ⁽¹⁾ = 1.57 and ν _f ⁽²⁾ ≈ 5 GHz for various states of the ionosphere is performed. It is shown that, under the same condition, the use of the second frequency is more advantageous and informative. The ways of further development of the theory and experiment in studying the role of quantum resonant properties in the distortion of global satellite positioning system signals and in solving the fundamental problem of their elimination are discussed.     

Electron–phonon heat exchange in quasi-two-dimensional nanolayers

We study the heat power P transferred between electrons and phonons in thin metallic films deposited on free-standing dielectric membranes. The temperature range is typically below 1 K, such that the wavelengths of the excited phonon modes in the system is large enough so that the picture of a quasi-two-dimensional phonon gas is applicable. Moreover, due to the quantization of the components of the electron wavevectors perpendicular to the metal film’s surface, the electrons spectrum forms also quasi two-dimensional sub-bands, as in a quantum well (QW). We describe in detail the contribution to the electron–phonon energy exchange of different electron scattering channels, as well as of different types of phonon modes. We find that heat flux oscillates strongly with thickness of the film d while having a much smoother variation with temperature (T _e for the electrons temperature and T _ph for the phonons temperature), so that one obtains a ridge-like landscape in the two coordinates, (d, T _e ) or (d, T _ph ), with crests and valleys aligned roughly parallel to the temperature axis. For the valley regions we find P ∝ T _e ^3.5 – T _ph ^3.5 . From valley to crest, P increases by more than one order of magnitude and on the crests P cannot be represented by a simple power law. The strong dependence of P on d is indicative of the formation of the QW state and can be useful in controlling the heat transfer between electrons and crystal lattice in nano-electronic devices. Nevertheless, due to the small value of the Fermi wavelength in metals, the surface imperfections of the metallic films can reduce the magnitude of the oscillations of P vs. d, so this effect might be easier to observe experimentally in doped semiconductors.     

The influence of phonons on the optical properties and the conductivity of quasi-one-dimensional metals

The frequency dependent conductivity σ(ω) completely taking into account the interaction between electrons is studied. The shape and the temperature dependence of optical absorption near the frequency of a molecular phonon activated due to the interaction with electrons are found. For a system with attractive sign of the e-e backward scattering amplitude g₁<0 an absorption edge near the gap 2Δ in the electronic spectrum is studied. A low frequency conductivity is discussed. The properties under consideration depend essentially on the magnitudes of e-e interactions and are critical to the sign of g₁.     

On the dynamic conductivity for an electron-impurity system

The correlation function formula for the dynamic conductivity of a system of non-interacting electrons in the field of impurities is analyzed in terms of proper connected diagrams. By selecting those diagrams appropriate in the region of weak coupling and low impurity concentration, a set of coupled equations for the energy broadening γ (ω, ε, n_s) and the energy shift Δ(ω, ε, n_s) is derived, where both γ and Δ depend on the frequency ω of a probing field, the energy ε of the electron, and the concentration, n_g, of impurities. With the assumption of a finite range potential, these equations are solved. It is found that γ (ω, n_s) is smaller than that extrapolated value which the conventional expression γ₀ for the low-concentration collision frequency would predict, in the entire region studied, that the difference γ₀-γ becomes appreciable when the ratio of the average time between scatterings, τ_c, to the average duration of a scattering, τ_d, is 100 or less, that γ (ω, n_s) decreases monotonically from its static value γ (0, n_s), and becomes vanishingly small in the region ω≈1/τ_d, and that in the static limit (ω=0), γ=γ₀[1?(2/π) (γ₀τ_d)+…], that the energy shift Δ is positive, and increases from 0 and reach a peak of magnitude γ₀ as ω is raised from 0. By using the γ and Δ obtained, the dynamic conductivity σ(ω, n_s) for degenerated electrons is calculated. The deviation, σ-σ₀, from the conventional expression σ₀=(?i) (n_ee²/M) [ω-iΓ₀]^?1, (n_e]=number density of electrons), for 0°K, is appreciable when the ratio τ_c/τ_d is 100 or less. The field-term correction, which arises from the modification of the scattering due to the probing field, is found to be negligible in the entire region studied.     

Investigation of the breakdown temperature in capillary discharge plasmas

We developed a simple way to estimate the breakdown temperature Tb of plasma electrons in a capillary, which is based on measurement of the electrical breakdown voltage Vb. The result shows that the breakdown temperature Tb decreases with increasing pressure. The thermal equilibrium electron temperature Te in the capillary plasma after the electrical discharge is also measured by using the optical emission spectroscopy method.     

Effect of ionizing radiation on the dielectric characteristics of TlInS2 and TlGaS2 single crystals

The dependences of the permittivity and electrical conductivity of TlInS₂ and TlGaS₂ single crystals on the temperature and electron beam irradiation dose have been studied. It has been established that, as the electron irradiation dose increases, the electrical conductivity σ significantly increases, whereas the permittivity ? decreases over the entire temperature range covered (80–320 K). It has been shown that anomalies in the form of maxima in the temperature dependences σ(T) and ?(T) are observed in the regions characteristic of phase transitions in TlInS₂. Irradiation of the TlInS₂ and TlGaS₂ crystals with electrons to doses of 10¹⁵ and 10¹⁶ cm^?2 does not affect their phase transition temperatures. The dispersion curves of the permittivity ? of the TlGaS₂ crystal have been constructed.     

Hopping conductivity and weak localization in two-dimensional disordered systems

The low temperature dependence of hopping conductivity σ(T) in 2d-DS with weak localization of electron states is investigated. Hopping between neighbouring localized states is suggested and a power law for σ(T) is obtained. Coulomb effects are shown to be negligible for this process. The transition from the logarithmic T dependence and to the exponential Mott's law is discussed. The density distribution of localized electron states is proved to be exponential. The dielectric permeability ?′(ω) is found to be proportional to |ω|^?1 in the field of validity of the logarithmic corrections.     

Relaxation of the electron temperature in an inert-gas afterglow plasma at elevated pressures

The relaxation of the electron temperature T _e in helium and neon afterglow at elevated pressures is studied theoretically and experimentally. It is shown that the processes in which fast electrons are produced are accompanied by the heating of thermal electrons. The high-energy part of the electron energy distribution function is studied in the intermediate regime (between the local and nonlocal regimes) of its formation. It is shown that, in this case, the calculated effective energy transferred from the fast electrons to the thermal electrons depends substantially on the wall potential of the discharge tube. Comparison of these calculations with experiments testifies to the reliability of the probe technique for measuring T _e in an afterglow at elevated pressures.     

Theory of the hot free carrier intraband-absorption coefficient of n-inversion layers

The absorption coefficient K of a quasi two dimensional (2D) hot free electron gas is calculated for the first time as a function of the lattice temperature T, the photon angular frequency w, the carrier density N_s as well as the electron temperature T_e when the carriers are scattered by ionized impurities, acoustic phonons and polar optical phonons. Analytical expressions are derived in the limiting cases of non-degeneracy and degeneracy of the electron system. In the quantum limit ħw/k_BT_e ≳ 1 where the interaction between the electron and the photon is inelastic K sensitively depends on the limiting scattering mechanism showing that the electron motion is completely controlled by the photon field. In the classical limit ħw/k_BT_e ⪡ 1 the absorption decreases proportional to w¹ independent of the limiting scattering mechanism in agreement with the experimental data deduced from far-infrared absorptivity measurements on GaAs heterolayers.     

Parametric study on excitation temperature and electron temperature in low pressure plasmas

This work aims at investigation of the validity of the electron excitation temperature (T_exc) by optical emission spectroscopy (OES) as an alternative diagnostic to the electron temperature (T_e). The excitation and the electron temperatures were measured at a wide range of gas pressures and input powers in different plasmas such as capacitively-coupled, inductively-coupled, and magnetron direct current plasmas. As a result, both temperatures were found to decrease with an increase in pressure, whereas they not very dependent on power, indicating that T_exc showed a tendency identical to that of T_e as pressure and power were varied. This result suggests that T_exc measurement can be an alternative diagnostic for T_e measurement once the ratio of the two temperatures is found in advance through a calibration experiment especially for low pressure high electron density industrial processing plasmas in which probe measurements are limited.     

Extension of Yafet's theory of spin relaxation to ferromagnets

By making use of Kramer's degeneracy of the electronic states in a nonmagnetic material, Yafet has derived an expression for the spin relaxation time T₁ due to scattering of electrons at phonons which involves the properties of electronic and phononic states and the matrix elements for the scattering. It is shown that an analogous expression for T₁ can be derived for ferromagnets (where Kramer's degeneracy does not hold) when taking into account the conservation of the total number of electrons. This expression can be used as a starting point for the ab initio calculation of T₁, and this quantity is required for an interpretation of the ultrafast demagnetization of ferromagnets after excitation with a femtosecond laser pulse.     

Energy relaxation of electrons in the (100) n-channel of a Si-MOSFET: II. Surface phonon treatment

The electron energy relaxation is investigated as a function of the “electron temperature” T_e in the n-channel of a (100) surface silicon MOSFET device by inspecting the phenomenological energy relaxation time τ_ε(T_e). τ_ε is determined theoretically and compared to experimental results in order to identify the energy relaxation mechanism(s) present at the interface. Two dimensional electron transport is assumed. Single activation temperature (θ) Rayleigh wave scattering and acoustic Rayleigh wave scattering are studied as possible energy loss processes. The effects of electric subbanding near the surface are included. τ_ε is calculated for T_e ? 15 K in the electric quantum limit. We find that a single θ = 12.0 K Rayleigh phonon fits theory to experiment for a single electron inversion density (N_inv) case, but can not provide a fit simultaneously for more than one N_inv value. Theory and experiment disagree when Rayleigh wave acoustic scattering is assumed.     

Current-conducting properties of paper consisting of multiwall carbon nanotubes

Electrical conductivity σ(T) of the paper consisting of multiwalled carbon nanotubes (MWCNTs) is studied in the temperature range 4.2-295 K, and its magnetoresistivity ρ(B) at various temperatures in magnetic fields up to 9 T is analyzed. The temperature dependence of the paper electrical conductivity σ(T) exhibits two-dimensional quantum corrections to the conductivity below 10 K. The dependences of negative magnetoresistivity ρ(B) measured at various temperatures are used to estimate the wavefunction phase breakdown length L _φ of conduction electrons and to obtain the temperature dependence L _φ = constT ^?p/2, where p ≈ 1/3. Similar dependences of electrical conductivity σ(T), magnetoresistivity ρ(B), and phase breakdown length L _φ(T) are detected for the initial MWCNTs used to prepare the paper.     

Temperature dependence of the radiation-stimulated conductivity of CsI crystals upon picosecond excitation by electron beams

The temperature dependence of the pulse conductivity for CsI crystals upon excitation with an electron beam (0.2 MeV, 50 ps, 400 A/cm²) at a time resolution of 150 ps is investigated. Under experimental conditions, the time of bimolecular recombination of electrons and holes (V _k centers) is directly measured in the temperature range 100–300 K. This made it possible to calculate the temperature dependence of the effective recombination cross section S(T)=7.9×10^?8 T² cm². The temperature dependence of the conductivity σ(T) is interpreted within the model of the separation of genetically bound electron-hole pairs. The activation energy of this process is found to be E _G =0.07 eV.     

Ultrahigh charging of dust particles in a nonequilibrium plasma

Charging of dust particles in a plasma with the two-temperature energy distribution of electrons has been studied. It has been shown that the dust-particle potential divided by the electron temperature decreases with increasing electron temperature in the plasma with cold ions. Owing to this behavior, the potential of the dustparticle surface increases with the electron temperature more slowly than the linear function and is lower than the electron temperature (divided by the elementary charge) for T _e > 5.5 eV in hydrogen and for T _e > 240 eV in argon. The fraction of fast electrons at which these electrons begin to contribute to the charge of dust particles has been determined. It has been shown that the charge of micron particles can reach 10⁶ elementary charges. The effect of the cold and thermal field emission on the charge of dust particles has been analyzed. The possibility of obtaining ultrahigh charges (to 10⁷ elementary charges on dust particles with a radius of 50–100 μm irradiated by a 25-keV 1-mA electron beam has been demonstrated.