Low-temperature thermal conductivity of tellurium-doped bismuth

Phonon thermal conductivities κ₂₂ (?T ‖ C1) and κ₃₃ (? T ‖ C₃) of tellurium-doped bismuth with an electron concentration in the range 1.8 × 10¹⁹ ≤ n_L ≤ 1.4 × 10²⁰ cm^?3 were studied in the temperature interval 2 < T < 300 K. The temperature dependence of the phonon thermal conductivity obtained on doped bismuth samples of both orientations exhibits two maxima, one at a low temperature and the other at a high temperature. The effect of various phonon relaxation mechanisms on the dependence of both phonon thermal conductivity maxima on temperature, impurity concentration, and electron density is studied.     

Electrophysical parameters of <Emphasis Type="Italic">c</Emphasis>-oriented Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> films with a low concentration of antistructural defects

Epitaxial c-oriented Bi₂Te₃ films 1.2 μm in thickness are grown by the hot wall method for a low supersaturation of the vapor phase over the surface of mica substrates. The hexagonal unit cell parameters a = 4.386 Å and c = 30.452 Å of the grown films almost coincide with the corresponding parameters of stoichiometric bulk Bi₂Te₃ crystals. At T = 100 K, the Hall concentration of electrons in the films is on the order of 8 × 10¹⁸ cm^?3, while the highest values of the thermoelectric coefficient (α ≈ 280 μV K^?1) are observed at temperatures on the order of 260 K. Under impurity conduction conditions, conductivity σ of the films increases upon cooling in inverse proportion to the squared temperature. In the temperature range 100–200 K, thermoelectric power parameter α²σ of Bi₂Te₃ films has values of 80–90 μW cm^?1 K^?2.     

Zeitliches Abklingen und Anisotropie von p-Terphenyl- undp-Terphenyl-Anthrazen-Mischkristallen bei Beschuß mit α-Teilchen

The time dependence of scintillation intensity from single crystals ofp-terphenyl and mixed crystals ofp-terphenyl and anthracene after bombarding with α-particles was investigated at the two temperaturesT=296 °K andT=92 °K. For the crystals ofp-terphenyl the time dependence of the scintillation anisotropy was also measured. Using the formulas given byKing andVoltz the decay curves ofp-terphenyl were decomposed into two components. Good agreement between experiment and theory was found. The ratio of the prompt intensity to the delayed intensity was determined to be 1∶2 atT=296 °K and 1∶3 atT=92 °K. The diffusion constants for triplet excitons were calculated to beD _T(296 °K)≈10^?5 cm² sec^?1 andD _T(92 °K)≈ 2×10^?6 cm² sec^?1, and the triplet-triplet interaction rate constantsχ _tt(296 °K)≈ 2.5×10^?11 cm³ sec^?1 andχ _tt(92 °K)≈0.5×10^?11 cm³ sec^?1.     

Thermopower in the region of hopping conduction in TlNiS<Subscript>2</Subscript>

Samples of the composition TlNiS₂ in the hexagonal system with the unit cell parameters a=12.28 Å, c=19.32 Å, and ρ=6.90 g/cm³ are synthesized. The results of the investigation into the electrical and thermoelectrical properties of TlNiS₂ samples in the temperature range 80–300 K indicate that TlNiS₂ is a p-type semiconductor. It is found that, at temperatures ranging from 110 to 240 K, TlNiS₂ samples in a dc electric field possess variable-range-hopping conduction at the states localized in the vicinity of the Fermi level. The density of localized states near the Fermi level is determined to be N_F=9×10²⁰ eV^?1 cm^?3, and the scatter of the states is estimated as J≈2×10^?2 eV. In the temperature range 80–110 K, TlNiS₂ exhibits activationless hopping conduction. At low temperatures (80–240 K), the thermopower of TlNiS₂ is adequately described by the relationship α(T)=A+BT, which is characteristic of the hopping mechanism of charge transfer. In the case when the temperature increases to the temperature of the onset of intrinsic conduction with the activation energy ΔE=1.0 eV, there arise majority intrinsic charge carriers of both signs. This leads to an increase in the electrical conductivity σ and, at the same time, to a drastic decrease in the thermopower α; in this case, the thermopower is virtually independent of the temperature.     

Millimeter wave dispersion in ethyl chloride

Dispersion of millimeter waves due to ethyl chloride in the range ν=1·34 cm^?1 to 1·44 cm^?1 is computed by means of quantum mechanical formulas. It is found that dispersion is due to (i) contribution of sixR branch rotational lines in the region considered, (ii) contribution ofR branch lines away from the region and (iii) the contribution ofQ branch lines at zero wavenumber. The maximum variation in the susceptibility is 1·9 × 10^?5 and occurs at ν=1·39 cm^?1 due to combined contribution of transitions at 1·3878 cm^?1, 1·3902 cm^?1 and 1·3927 cm^?1.     

Paramagnetische Relaxation im Terbiumäthylsulfat

The paramagnetic relaxation of Tb_0,01 Y_0,99(C₂H₅SO₄)₃·9H₂O at temperatures between 1,14°K and 4,21°K has been investigated with the absorption-dispersion method at frequencies between 5 sec^?1 and 10240 sec^?1 and different magnetic fields. AtH=700 Oe. The relaxation time follows the equationτ ^?1=[A H ³ coth (g _z μ _B H/2k T)+B T ⁷] sec^?1 as a function of temperature. ForH<800 Oe the paramagnetic relaxation is influenced by cross relaxation processes between the hyperfine structure levels.     

Bestimmung der Kernmomente des Ho165 aus der Hyperfeinstruktur des Grundzustandes im Ho I-Spektrum

In an atomic beam magnetic resonance experiment, the hyperfine interaction constantsA andB of the⁴ I _2/15-groundstate of Ho¹⁶⁵ were found to beA=800,58389 (50) MHz,B=?1667,997 (50) MHz. Using an effective value for 〈r ^?3〉, the magnetic moment of the Ho¹⁶⁵ nucleus was calculated to beμ=4·1(4)μ _n . The quadrupolement was determined by use of the 〈r ^?3〉 given byWatson andFreeman. The result isQ=2·4·10^?24 cm².     

Adiabatic elastic moduli in ZnSe : Mn<Superscript>2+</Superscript> and ZnSe : V<Superscript>2+</Superscript> crystals

The temperature dependences of the elastic moduli C ₄₄ (C ₁₁ ? C ₁₂)/2 and C _l = (C ₁₁ + C ₁₂ + 2C ₄₄)/2 of ZnSe : V²⁺ (impurity concentration, 6 × 10¹⁸ cm^?3) and ZnSe : Mn²⁺ (9.4 × 10²⁰ cm^?3) are measured in the temperature range 1.4–100.0 K at frequencies of 52 and 156 MHz. The temperature dependences of the adiabatic elastic moduli are derived. It is established that softening of the symmetry modules is observed only in the crystal with an impurity having orbitally degenerate states.     

Paramagnetische Resonanz von Er3+ in Y2O3

The paramagnetic resonance absorption of trivalent erbium in single crystals of Y₂O₃ on sites of crystal field symmetry C_3i and C₂ is investigated at 4.2°K and 9.2 kMc/s. The values of theg-tensors and those of the hyperfine structure parallel to the axes of crystalline fields are:g _‖=12.176,g _⊥=3.319,A=426.4·10^?4 cm^?1, andg _z =12.314,g _x =1.645,g _y =4.892, andA _z =433.2·10^?4 cm^?1 for the C_3i-ions and the C₂-ions, respectively. For ions on sites of symmetry C₂ the principal axes ofg in the plane perpendicular toz are found ± 2° beside the [100]-directions. This is different from the result on Yb³⁺ in Y₂O₃. The dependency ofg on the angle of rotation is determined for the (001)-, (110)-, and (111)-plane.     

Sur les propriétés magnétiques de l'adénosine triphosphate (ATP) et de ses constituants

A detailed thermomagnetic study (80°–380°K) has been made on polycrystalline adenosine triphosphate (disodium salt), hydrated, dried, compressed and deeply cooled. The susceptibility-temperature curves exhibit around 180°K an abrupt transition from the Curie paramagnetismχ?χ ₀=CT ^?1,C=1.37·10^?5 cm³ g^?1°K, to a state, which most frequently is a temperature independent paramagnetism of the order of 10^?7 cm³ g^?1 (extremely weak ESR absorption at room temperature according toIsenberg andSzent-Györgyi). The Curie paramagnetism might be related to the acceptor-donor process of charge transfer imagined bySzent-Györgyi to explain the energetic comportment of ATP. Extensive thermomagnetic study of adenosine, KH₂PO₄ and KD₂PO₄ was made. Using a simple model based on these data we have constructed susceptibility-temperature curves for ATP di-Na which approximate the real behaviour fairly well.     

Mechanisms of low-temperature high-frequency conductivity in systems with a dense array of Ge<Subscript>0.7</Subscript>Si<Subscript>0.3</Subscript> quantum dots in silicon

High-frequency (HF) conductivity in systems with a dense (with a density of n = 3 × 10¹¹ cm^?2) array of self-organized Ge_0.7Si_0.3 quantum dots in silicon with different boron concentrations n_B is determined by acoustic methods. The measurements of the absorption coefficient and the velocity of surface acoustic waves (SAWs) with frequencies of 30–300 MHz that interact with holes localized in quantum dots are carried out in magnetic fields of up to 18 T in the temperature interval from 1 to 20 K. Using one of the samples (n_B = 8.2 × 10¹¹ cm^?2), it is shown that, at temperatures T ≤ 4 K, the HF conductivity is realized by the hopping of holes between the states localized in different quantum dots and can be explained within a two-site model in the case of

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, where ω is the SAW frequency and τ₀ is the relaxation time of the populations of the sites (quantum dots). For T > 7 K, the HF conductivity has an activation character associated with the diffusion over the states at the mobility threshold. In the interval 4 K < T < 7 K, the HF conductivity is determined by a combination of the hopping and activation mechanisms. The contributions of these mechanisms are distinguished; it is found that the temperature dependence of the hopping HF conductivity approaches saturation at T* ≈ 4.5 K, which points to a τ₀ ≤ 1. A value of τ₀(T*) ≈ 5 × 10^?9 s is determined from the condition ωτ₀(T*) ≈ 1.

     

Supraleitung von Niob unter uniaxialem Zug

The transition temperature of Nb-wires is increased by uniaxial stress. The average slope of the observedT _c (σ)-dependence equals 3.2 · 10^?5 °K cm²/kp.     

Lattice instability induced by 3<Emphasis Type="Italic">d</Emphasis> impurities in a zinc selenide crystal

It was experimentally shown that, in a 3d-impurity-doped ZnSe crystal with the zinc blende structure, nanosized ionic shear displacements of the trigonal (ZnSe : Ni, ZnSe : V) and tetragonal (ZnSe : Cr) types arise at temperatures of 300 and 120 K. As the temperature decreases in the range 100.0–4.2 K, the shear elastic moduli C ₄₄ (ZnSe : Ni) and (C ₁₁–C ₁₂)/2 (ZnSe : Cr) are softened owing to the 3d impurities. A new peak at a frequency of 90 cm^?1 appears in the Raman scattering spectrum of ZnSe : Ni at 5 and 20 K.     

Full-Optical Two-Channel Adaptive System for Detecting Microcantilever Vibrations

We demonstrate a full-optical two-channel system for measuring mechanical vibrations of microoscillators, which is based on adaptive holographic interferometer using multiwave mixing in a photorefractive crystal. The orthogonal geometry of dynamic hologram recording makes possible independent operation of the measurement channels. The absolute detection limit of the system to cantilever vibrations in a channel amounted to 2.6·10 ^?6 nm·W^1/2 ·Hz ^?1/2. We tested the system in simultaneous detection of vibrations of two cantilevers with dimensions 215×40×15 μm.     

Rotational analysis of the B-X band system of the SbO molecule

Rotational analyses of the two 0-0 bands of theB ²ΣX ²Π_reg system of SbO were carried out for the first time from spectrograms taken in the second order of a 21 ft. concave grating spectrograph having a dispersion of 1·25 Å/mm. The rotational constants of the ν=0 vibrational levels of the upper and lower states, and of the coupling constant A₀ of the lower²Π_reg state were deduced. These values are summarised below. v₀₀=25 334·93 cm^?1 B′₀=0·3190 cm^?1 B″₀=0·3490 cm^?1 A ₀=2276 cm^?1 r′₀=1·933 Å r″₀=1·848 Å.     

Bestimmung des elektrischen Kernquadrupolmomentes des ungeraden stabilen Strontium-87-Kerns

In order to determine the electric quadrupole moment of Sr⁸⁷ (I= 9/2) the hyperfine structure-splitting of the 5s5p ³ P ₁-state of the SrI-spectra was investigated by optical double resonance. By detection of high frequency transitions (ΔF=±1,Δm _F=0,±1) in an external magnetic fieldH ₀≈0 one obtains the hyperfine structure separations asv _F=11/2?F=9/2=1463·149 (6) Mc/sec andv _F=9/2?F=7/2=1130·264 (6) Mc/sec. From these frequencies one calculates the magnetic hyperfine structure-splitting constantA=?260·084 (2) Mc/sec and the electric quadrupole interaction constantB=?35·658 (6) Mc/sec. B leads to an electric quadrupole moment ofQ(Sr⁸⁷)=+0·36 (3)·10^?24 cm².     

Charge transfer over localized states in a TlS single crystal

It is revealed that TlS single crystals exhibit a variable range hopping conduction along a normal to their natural layers at temperatures T ≤ 230 K in a dc electric field and a nonactivated hopping conduction at low temperatures in strong electric fields. Estimates are made for the density of states near the Fermi level (N _F = 2.8 × 10²⁰ eV^?1 cm^?3 and their energy spread (ΔW = 0.02 eV), the localization radius (a = 33 Å), the average jump distance in the region of activated (R _av(T) = 40 Å) and nonactivated (R _av(F) = 78 Å) hopping conduction, and also the drop in the charge carrier potential energy along the jump distance in an electric field F: eFR = 0.006 and 0.009 eV at F = 7.50 × 10³ and 1.25 × 10⁴ V/cm, respectively.     

Parametric study of radiofrequency helium discharge under atmospheric pressure

The parameters of radiofrequency helium discharge under atmospheric pressure were studied by electrical and optical measurements using high voltage probe, current probe and optical emission spectroscopy. Two discharge modes α and γ were observed within certain limits. During α to γ mode transition, a decrease in voltage (280–168 V), current (2.05–1.61 A) and phase angle (76^°–56^°) occurred. The discharge parameters such as resistance, reactance, sheath thickness, electron density, excitation temperature and gas temperature were assessed by electrical measurements using equivalent circuit model and optical emission spectroscopy. In α mode, the discharge current increased from 1.17 to 2.05 A, electron density increased from 0.19 × 10¹² to 0.47 × 10¹² cm^?3 while sheath thickness decreased from 0.40 to 0.25 mm. The excitation temperatures in the α and γ modes were 3266 and 4500 K respectively, evaluated by Boltzmann’s plot method. The estimated gas temperature increased from 335 K in the α mode to 485 K in the γ mode, suggesting that the radiofrequency atmospheric pressure helium discharge can be used for surface treatment applications.     

Eine Modellvorstellung für das „Auroral Afterglow“ und das „Pink Afterglow“

Based on own measurements of the decay of light intensity and electron density, a simple model for the auroral afterglow and the pink afterglow is proposed. To a certain extent the model can account for the influence of pressure and tube diameter on the behaviour of the afterglow. The first decay of the electron density towards the first minimum seems not to be influenced by creation processes for electrons during 3 to 15 ms. Therefore, the first decay can be used to measure the neutralization processes of electrons and positive ions. At pressures lower than 3 torr the electrons are removed by ambipolar diffusion with a rate given byD _a ·p≈2100 torr·cm²·s^?1. From this value an electron temperature of about 7200 °K could be derived. Assuming that ambipolar diffusion will remain the dominant loss process the time dependence of the electron creation rate has been evaluated. At a pressure of 1,75 torr the maximum electron creation rate was 4·10¹² s^?1·cm^?3. At the same time the emission density rate of the first negative bands was found to be 2.7·10¹³ cm^?3 s^?1. During one decay process about five times more electrons are created than the initial number. To explain the proportionality found between the electron density and the emission of the first negative bands, it is assumed that the ions, presumable N ₂ ⁺ -ions, are repeatedly excited to theB ² Σ _u ⁺ -state by metastables.     

Crystal structure and magnetic susceptibility of (CuInSe<Subscript>2</Subscript>)<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>(2MnSe)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

The crystal structure of samples in the (CuInSe₂)_{1 ? x} (2MnSe) _x system at room temperature and their magnetic susceptibility in the temperature range 77–1000 K are investigated. It is established that compositions with concentrations 0≤ x ≤ 0.2 form solid solutions with a tetragonal structure, space group I \(\bar 4\)2d (122). The specific magnetic susceptibility χ of samples with 0.1 ≤ x ≤ 0.4 at 77 K lies in the range 9 × 10^?4?1.6 × 10^t-3cm³/g. The temperature dependence of the inverse magnetic susceptibility of the sample with x = 0.4 suggests the presence of a component with antiferromagnetic ordering and a reliably measured Néel temperature that is characteristic of MnSe. The dependences χ = f(T) of the compositions with x = 0.1, 0.2, 0.3, and 0.4 indicate the occurrence of magnetic phase transitions with a change in the spin state.