Anomalous behavior of silver atoms in intercalation under a two-dimensional graphite film

It is shown that silver atoms, the only ones of many atoms studied previously (Si, C, Mo, Pt, Cu, Ir, Ni, Au, Cs, K, Na, Ba,...), do not intercalate, that is, do not penetrate under a two-dimensional graphite film (2DGF) on a metal either upon direct depositing in the temperature range 300–2000 K or annealing of a previously deposited silver film. Intercalation becomes possible if silver is deposited on a 2DGF with previously intercalated cesium; in this case, silver atoms displace Cs atoms from under the 2DGF upon heating up to 1100 K.     

Initial stages of the interaction with oxygen of samarium thin films grown on the iridium surface

The interaction of thin (<1 nm) samarium films deposited on a textured iridium ribbon has been investigated by thermal desorption spectrometry. Samarium atoms deposited at T = 300 K desorb in three phases associated with the formation of a submonolayer samarium coverage on iridium, a compound of samarium with iridium, and a multilayer samarium film. The interaction with oxygen leads to the appearance of a new desorption phase, which is associated with the formation of samarium oxide. Oxidation of samarium is observed during exposure in oxygen already at room temperature. An increase in temperature of the iridium ribbon, at which exposure in oxygen occurs, to T = 1100 K leads to the formation of the compound of samarium with iridium. Further, the film of the compound decomposes in the course of interaction with oxygen, and samarium oxide grows on the Ir surface.     

Superconductivity of A15-and σ-phase of Nb-Ir

The superconducting properties of A15-, σ-, and tetragonal phases of the system Nb−Ir were investigated. The alloys were prepared by sintering and arc melting. They were subjected to optical and scanning electron microscopy. The lattice parameters were determined by x-ray diffraction technique. Superconducting transition temperatures,T _c , as well as upper critical fields,H _c2, were measured inductively and resistively. TheT _c -values of the σ-phase vary between 2.15 and 2.40 K whereas for the A15-phase they vary between 1.83 and 2.73 K. TheT _c -value of the tetragonal phase is 3.81 K. The upper critical fields of the tetragonal and the A 15-phase are nearly the same (≈13 kG) and lower compared with that of the σ-phase (≈18 kG). Several theoretically predicted values ofH _c2(0) are evaluated and compared with the experimental ones.     

Inhomogenous magnetic ground state in CeAgGa

CeAgGa crystallizes in CeCu₂ Imma structure with Ag and Ga atoms randomly distributed at 8h sites. The magnetic and transport properties of the orthorhombic CeAgGa compound have been obtained from the analysis of ac magnetic susceptibility χ _ac , magnetization M vs. magnetic field, specific heat C and electrical resistivity ρ. The results provide evidence for the formation of a spin-glass state with a freezing temperature T _f = 5.1 K. The randomness in the Ce-Ce magnetic exchange interactions seem to arise from a statistical distribution of Ag and Ga atoms on a crystallographic site of the CeAgGa crystal lattice. The results provide also evidence for the formation of ferromagnetic-like order at the temperature T _C ≈ 3.6 K. Band structure calculations for a disordered system give magnetic moment similar to saturation moment obtained from magnetization measurements, however, its calculated value is insensitive on Ga/Ag off-stoichiometry in the 8h position. Complex behavior of CeAgGa Kondo-lattice compound is discussed in terms of interplaying Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions, Kondo effect and structural disorder.     

The relation betweenT c and anharmonicity in Sn-base A15 superconductors

The absolute value of the recoil-free fraction was measured accurately at three reference temperatures in the range 300 K down to 4 K, in two Sn-baseA 15 superconductors with disparate superconducting properties. The higher-T _c compound Nb₃Sn (T _c≈18K) exhibits low-temperature anharmonicity; this is in contrast to the lattice-dynamics of the low-T _c isomorph V₃Sn (T _c≈4K) in which it is observed that harmonic binding of the Sn atoms is prevalent down to low temperatures. The difference in the superconducting properties of the two compounds is shown to correlate with the considerable difference in their lattice-dynamics.     

μ+SR studies on superconducting YBa2(Cu1−xFex)3Oy system

Spin-glass like magnetic ordering of iron moments was observed in both orthorhombic and tetragonal YBa₂(Cu_1−xFe_x)₃O_y (x=0.08) by μ⁺SR measurements. In a “Tetra” sample, all the muons sense the superconducting transition at 60 K and magnetic ordering at around 15 K, while in an “Ortho” sample they reveal that two magnetically different parts exist in the sample: about 40% of the sample is superconducting withT _c ≈90K and the remaining part is magnetic withT _M≈33K. These phenomena can be explained in terms of clustering of the Fe atoms in the “Ortho” sample.     

Ultrahigh-vacuum STM studies of the structure of a graphene layer on the Ir(111) surface

The atomic structure of a two-dimensional graphite film formed on the Ir(111) surface is studied. In order to weaken the interaction of the graphite film with the metal surface, cesium atoms are intercalated beneath the film. The studies by scanning tunneling microscopy in ultrahigh vacuum provide support for the formation of a continuous graphite layer, with the regular arrangement of carbon atoms at extended surface regions. From comparison of the roughness of the film and that of the substrate, it follows that the spacing between the film and metal surface varies within the limits of 1 nm. Characteristic structural defects of configuration (5, 7) are detected in the film.     

Graphene-graphite phase transition at the surface of a carbonized metal

A phase transition leading to the transformation of a graphene layer into a multilayer graphite film at the surface of a carbonized metal has been experimentally studied on the atomic level under ultrahigh-vacuum conditions. It has been shown that this process is governed by dynamic equilibrium between edge atoms of graphene islands and a chemisorbed carbon phase, two-dimensional carbon “gas,” and is observed in the temperature range of 1000–1800 K. The features of the phase transition at the surfaces Ni(111), Rh(111), and Re(10-10) are similar, although the specific kinetic characteristics of the process depend on the properties of the substrate. It has been shown that change in the emissivity of the substrate after the formation of a multilayer graphite film increases the rate of the phase transition and leads to a temperature hysteresis.     

Electrical conductivity and magnetic properties of La1 ? xCaxMn1 ? yFeyO3 ceramic samples (x = 0.67, y = 0, 0.05)

The temperature dependences of the magnetic susceptibility χ(T) and the electrical resistivity ρ(T) of ceramic samples of La_{1 − x} Ca _x MnO₃ with x = 0.67 (LCMO) and La_{1 − x} Ca _x Mn_{1 − y} Fe _y O₃ with x = 0.67 and y = 0.05 (LCMFO) are investigated in magnetic fields B = 50–10⁵ G and the temperature range T = 4.2–400 K. Both samples undergo a transition from the paramagnetic state to a state with charge (orbital) ordering (CO) at temperatures T _CO ≈ 272 K for LCMO and T _CO ≈ 222 K for LCMFO. The behavior of the paramagnetic phase in the temperature range 320–400 K for LCMO and 260–400 K for LCMFO is described by the Curie-Weiss law with effective Bohr magneton numbers p _eff = 4.83 μ_B (LCMO) and 4.77 μ_B (LCMFO), respectively. The disagreement between the observed positive Weiss temperatures (θ ≈ 175 K (LCMO) and θ ≈ 134 K (LCMFO)) and negative Weiss temperatures required for the antiferromagnetic ground state can be explained by the phase separation and transition to the charge-ordered state. The magnetic irreversibility for T < T _CO is accounted for by the existence of a mixture of the ferromagnetic and antiferromagnetic phases, as well as the cluster glass phase. At low temperatures, doping with iron enhances the frustration of the system, which manifests itself in a more regular behavior of the decay rate of the remanent magnetization with time. The temperature dependence of the electrical resistivity in the range of the charge-ordered phase conforms to the variable-range hopping model. The behavior of the electrical resistivity is governed by the complex structure of the density of localized states near the Fermi level, which includes a soft Coulomb gap Δ = 0.464 eV for LCMO and 0.446 eV for LCMFO. It is established that the ratio between the localization radii of charge carriers a for LCMFO and a _und for LCMO is a/a _und = 0.88. Original Russian Text ? V.S. Zakhvalinskiĭ, R. Laiho, T.S. Orlova, A.V. Khokhulin, 2008, published in Fizika Tverdogo Tela, 2008, Vol. 50, No. 1, pp. 61–68.     

Electron spin resonance in InGaAs/GaAs heterostructures with a manganese δ layer

The static and high-frequency dynamic magnetic properties and photoluminescence of two-dimensional semiconductor GaAs heterostructures containing an InGaAs quantum well and a thin manganese layer (δ layer) are studied. It is found that the Curie temperature is T _C ≈ 35 K and the magnetic anisotropy field of the ferromagnetic manganese δ layer is H _a ≈ 600 Oe. The spin resonance spectrum exhibits a line in weak fields (from −50 to 100 Oe), which is observed in the same temperature interval T < 40 K where the ferromagnetic ordering of the manganese δ layer occurs. This line is probably caused by the nonresonance contribution of the spin-dependent scattering of charge carriers to the negative magnetic resistance. The dependence of the degree of polarization of photoluminescence on the magnetic field also points to the ferromagnetic behavior of the manganese δ layer.     

The phase diagram of (NH4I)x(KI)1−x

The χ,T phase diagram of (NH₄I)_x(KI)_1−x has been determined using neutron diffraction experiments and dielectric spectroscopy. At low temperatures and with decreasing χ, the sequence γ, β, ε and glass phase has been detected. The critical concentration χ_c≈0.55 separates the glassy phase with frozen-in orientational disorder from the ε phase which reveals long-range orientational order. Close to χ_c our experiments reveal evidence for two subsequent glass transitions.     

Isotope effect in charge transport of LuB12

The galvanomagnetic properties of single-crystal samples with various isotopic boron compositions have been investigated for the first time for the normal state of superconductor LuB₁₂ (T c ≈ 0.44 K). Precision measurements of the resistivity, Hall coefficient, and magnetic susceptibility have been performed over a wide temperature range of 2–300 K in magnetic fields up to 80 kOe. A change of the charge transport regime in this nonmagnetic compound with metallic conduction is shown to occur near T* ≈ 50−70 K. As a result, a sharp peak with significantly different amplitudes for Lu¹⁰B₁₂ and Lu¹¹B₁₂ is recorded in the temperature dependences of the Hall coefficient R _H(T) near T*. A significant (about 10%) difference (in absolute value) of the Hall coefficients R _H for the Lu¹⁰B₁₂ and Lu¹¹B₁₂ compounds at helium and intermediate temperatures has been found and the patterns of behavior of the dependence R _H(H) for T < T* in an external magnetic field H ≤ 80 kOe for Lu¹⁰B₁₂ and Lu¹¹B₁₂ are shown to differ significantly. Analysis of the Curie-Weiss contribution to the magnetic susceptibility χ(T) leads to the conclusion about the formation of magnetic moments μ_eff ≈ (0.13−0.19)μ_B in each unit cell of the fcc structure of LuB₁₂ compounds with various isotopic compositions. The possibility of the realization of an electronic topological 2.5-order transition near T* and the influence of correlation effects in the 5d-band on the formation of a spin polarization near the rare-earth ions in LuB₁₂ is discussed.     

Electron-stimulated cesium atom desorption from the Cs/CsAu/Au/W system

This paper reports on a continuation of the investigation of electron-stimulated Cs-atom desorption from a tungsten surface on which cesium and gold films had been adsorbed at T = 300 K. Earlier studies revealed that Cs atoms start to desorb only after more than one monolayer of gold and more than one monolayer of cesium had been deposited on the tungsten surface. In this case, a coating consisting of a gold adlayer on tungsten, a CsAu compound possessing semiconducting properties, and a cesium monolayer capping CsAu (Cs/CsAu/Au/W) is formed on the tungsten surface at 300 K. The yield of atoms from this system exhibits a resonant dependence on the incident electron energy E _e , with an appearance threshold of 57 eV and a maximum at 64 eV. In this case, Cs atoms desorb in two channels, with one of them involving Cs desorption out of the cesium monolayer, and the other, from the CsAu monolayer. The Cs yield at E _e = 64 eV has been investigated in both desorption channels, with an additional cesium coating deposited on the already formed Cs/CsAu/Au/W layered system, as well as of the effect annealing produces on the yield and energy distributions of Cs atoms. It has been demonstrated that Cs atoms evaporated at 300 K on a layered coating with a cesium monolayer atop the CsAu layer on tungsten capped with a gold adlayer, rather than reflected from the cesium monolayer or adsorbing on it, penetrate through the cesium monolayer into the bulk of CsAu even with one CsAu layer present. The desorption yield does not vary with increasing cesium concentration at 300 K, but falls off gradually at 160 K. Annealing within the temperature range 320 K ≤ T _H ≤ 400 K destroys the cesium monolayer and the one-layer CsAu coating, but the multilayer CsAu compound does not break up in this temperature range even after evaporation of the cesium monolayer. It is shown that Cs atoms escape from the multilayer CsAu compound primarily out of the top CsAu layer.     

Magnetic and thermal properties of CuFeS<Subscript>2</Subscript> at low temperatures

The magnetic moment M, the magnetic susceptibility χ, and the thermal conductivity of chalcopyrite CuFeS₂, which is a zero-gap semiconductor with antiferromagnetic ordering, have been measured in the temperature range 10–310 K. It has been revealed that the quantities χ(T) and M(T) increase anomalously strongly at temperatures below ∼100 K. The temperature dependence M(T) is affected by the magnetic prehistory of the sample. An analysis has demonstrated that the magnetic anomalies are associated with the presence of a system of noninteracting magnetic clusters in the CuFeS₂ sample under investigation. The formation of the clusters is most likely caused by the disturbance of the ordered arrangement of Fe and Cu atoms in the metal sublattice of the chalcopyrite, which is also responsible for the phase inhomogeneity of the crystal lattice. The inhomogeneity brings about strong phonon scattering, and, as a result, the temperature dependence of the thermal conductivity coefficient exhibits a behavior characteristic of partially disordered crystals.     

Magnetic and transport properties of monocrystalline<Emphasis Type="Italic">Fe</Emphasis><Subscript>3</Subscript><Emphasis Type="Italic">O</Emphasis><Subscript>4</Subscript>

A monocrystal ofFe ₃ O ₄ is characterized by resistance, magnetoresistance and magnetic measurements in a temperature range from 4.2 K to 350 K and magnetic field-cycling from −9 T to 9 T. The resistance measurements revealed a metal-insulator Verwey transition (VT) atT _v =123.76 K with activation energy E=92.5 meV at T >T _v and temperature-substitute for the activation energy below the VT,T ₀=E/k _B ≈3800 K within 70 K–110K. The magnetotransport results independently verified the VT at 123.70 K, with discontinuous change in the magnetic moment ΔM≈0.21 ΔM≈0.21μ _B and resistance hysteresis, dependent on the magnetic field in a narrow temperature range of 0.4° around theT _v . The magnetic characterization established self consistentlyT _v as ≈123.67 K, the jump in the magnetization at the VT≈0.25μ _B and confirmed, that the magnetocrystalline anisotropy is the main microscopic mechanism responsible for the magnetization of the monocrystal (88%) with additional natural and imposed defects contributing as 12%.     

Nonlinear properties and paramagnet-to-ferromagnet transition in Nd<Subscript>0.7</Subscript>Ba<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> single crystal with metallic ground state

We present the results from studying the magnetic properties (linear and nonlinear susceptibilities and the depolarization of polarized neutrons) of Nd_{1 − x} Ba _x MnO₃ manganite, x = 0.3, with Curie temperature T _C ≈ 140 K and dielectric-to-metal transition temperature T _DM ≈ 129 K. Its critical behavior corresponds to that of an isotropic 3-D ferromagnet at temperatures above T*≈ 144 K, but a strong nonlinear response in weak magnetic fields and depolarization are observed at temperatures below T*. It is shown that this nontraditional behavior is related to the generation of ferromagnetic clusters in the paramagnetic matrix that form a conducting percolative network at temperatures near T _DM.     

Low-temperature behavior of specific heat curves in ruthenocuprate RuSr<Subscript>2</Subscript>Gd<Subscript>1.5</Subscript>Ge<Subscript>0.5</Subscript>Cu<Subscript>2</Subscript>O<Subscript>10 − δ</Subscript>: Superconducting,magnetic and crossing-point effects

Magnetic and superconducting properties of polycrystalline samples of RuSr₂Gd_1.5Ce_0.5Cu₂O_{(10 − δ)}, asprepared (by solid-state reaction) and annealed in pure oxygen at different pressure are presented. Specific heat and magnetization were investigated in the temperature range 1.8–300 K with a magnetic field up to 8 T. Specific heat, C (T), shows a jump at the superconducting transition (with onset at T ≈ 37.5 K) and a Schottky-type anomaly below 20 K. It is found that curves C(T) taken for different values of magnetic field have the same crossing point (at T _* ≈ 2.7 K) for all samples studied. At the same time, C(H) curves taken for different temperatures have a crossing point at a characteristic field H _* ≈ 3.7 T. These effects are manifestations of the crossing-point phenomenon, which is supposed to be inherent for strongly correlated electron systems.     

Investigation of thermal expansion,phase diagrams,and barocaloric effect in the (NH4)2WO2F4 and (NH4)2MoO2F4 oxyfluorides

The thermal expansion along the principal crystallographic axes of the (NH₄)₂WO₂F₄ and (NH₄)₂MoO₂F₄ oxyfluorides has been studied. The anomalous behavior of α _i (T) due to the phase transitions has been revealed at T ₁ = 271.4 K and T ₂ ≈ 180 K for the molybdate and at T ₁ = 201.5 K and T ₂ ≈ 161 K for the tungstate. The quantities dT/dp and dT/dσ _i , which characterize the dependence of the phase transition temperatures on the hydrostatic and uniaxial pressures, have been determined from analyzing the results of studies of the thermal expansion and heat capacity with the use of the Pippard relations. The p-T and α _i -T phase diagrams reflect different characters of the influence of the pressure on the stability of the initial and distorted phases of the oxyfluorides. The magnitudes of the extensive and intensive barocaloric effects determined in the vicinity of the structural phase transitions are as follows: ΔS _BCE varies from approximately −10 to −17 J/mol K and ΔT _AD ≈ 8−17 K for the molybdate and ΔS _BCE varies from approximately −10 to −17 J/mol K and ΔT _AD ≈ 8−13 K for the tungstate.     

Intercalation of graphene on iridium with samarium atoms

Intercalation of graphene on Ir (111) with Sm atoms is studied by methods of thermal desorption spectroscopy and thermionic emission. It is shown that adsorption of samarium at T = 300 K on graphene to concentrations of N ≤ 6 × 10¹⁴ atoms cm^–2 followed by heating of the substrate leads to practically complete escape of adsorbate underneath the graphene layer. At N > 6 × 10¹⁴ atoms cm^–2 and increasing temperature, a fraction of adsorbate remains on graphene in the form of two-dimensional “gas” and samarium islands and are desorbed in the range of temperatures of 1000–1200 K. Samarium remaining under the graphene is desorbed from the surface in the temperature range 1200–2150 K. Model conceptions for the samarium–graphene–iridium system in a wide temperature range are developed.     

The nature of the adsorption bond between graphite islands and iridium surface

To reveal the nature of adsorption bonds between two-dimensional graphite islands and iridium (111) and (100) faces, a study has been made of the adsorption of potassium and cesium atoms on the surface of these systems, using thermal desorption and Auger electron spectroscopy, as well as surface ionization and thermionic emission techniques. The graphite islands are shown to be weakly bound to the iridium substrate by Van der Waals forces. The unsaturated valence bonds at the periphery of the graphite islands are “lowered down” on to the metal. The recess between the graphite layer and the metal is filled by adsorbing particles through defects in the graphite layer. The atoms can penetrate into the recess in two ways: at T > 1000 K directly from the flux incident on the surface, and at T < 1000 K also by migration from the graphite island surface. The adsorption capacity of this state is ～ (2?3) × 10¹⁴cm^-2. Thermal destruction of the islands at T > 1900 K liberates the potassium and cesium atoms from under the graphite islands. Our study suggests that the reason for the “raised” position of the islands lies in the valence bonds of the graphite layer being saturated, the valence bonds of the metal and its crystallographic orientation being less significant. Therefore one may expect the graphite layer to be raised also above other metals as well. The filling by cesium of the recess between the graphite layer and iridium and of the adsorption phase on the graphite surface, does not change the general “graphitic” shape of the carbon Auger peak. This cesium results, however, in a pronounced splitting of the negative spike on the carbon peak (which provides information on its location relative to the graphite layer) indicating the appearance in the valence band of graphite near the Fermi level of two narrow (～ 2?3 eV) regions with an enhanced density of states originating from the presence of the alkali metal.