Magnetization reversal in (0 0 1)Fe thin films studied by combining domain images and MOKE hysteresis loops

The magnetization reversal of epitaxial single-crystal Fe films has been studied by combining domain images and hysteresis loops. The reversal is quantitatively described by combining the coherent rotation model and the domain wall displacement model. The pinning energy exerted on the domain walls and the domain wall angle at the switching fields are obtained by fitting this model to experimental hysteresis loops. The field-dependent pinning energy and the domain wall angle in the reversal process, and the contributions of second-order magneto-optic effect to hysteresis loops, are revealed to be two important features of single-crystal Fe films.     

Magnetization dynamics in thin films and multilayers

The behavior of spin waves is influenced by essentially all the parameters which characterize a magnetic material – exchange interactions, anisotropy, surface effects, dipolar interactions, phase transitions and imperfections. Thus measurements of spin wave frequencies can give important information on characterizing different magnetic materials and structures. In this paper we outline the major results and calculational methods for long-wavelength spin waves in thin films and multilayers. While the primary attention is on ferromagnet-based structures, long-wavelength spin waves in antiferromagnets are also discussed. We indicate how particular measurements of spin wave frequencies can be used to extract the fundamental parameters of the different structures.     

MOKE hysteresis loop method of determining the anisotropy constants of ferromagnetic thin films: fe on GaAs(1 0 0) with overlayers of Au and Cr

This paper presents a quantitative method used to determine the magnetocrystalline anisotropy constants of thin magnetic films from normalized magnetization data measured on a magneto-optic Kerr effect (MOKE) magnetometer. The method is based on a total magnetic energy density model, and incorporates higher order effects in the detected signal. By way of illustration, the method is used to determine the magnetocrystalline anisotropy constants of epitaxial thin Fe films on GaAs substrates, which have different overlayers. It is shown that a Cr overlayer on a 30 ML thick Fe film reduces the uniaxial contribution to the magnetic anisotropy compared with an Au overlayer.     

Strain effects in epitaxially grown La0.7Sr0.3MnO3 thin films

We report here on an X-ray absorption study of La_0.7Sr_0.3MnO₃ films epitaxially grown on SrTiO₃ substrate. The local organization around Mn in oriented films with 600 Å in thickness was investigated by polarized Extended X-ray Absorption Fine Structure. The angle between electric field vector and film surface was set equal to 5° and 70° to investigate almost independently the contribution of the manganese neighbors situated in and out of the film plane. The first neighboring shell oxygen is found to be the same in both geometries, but small changes in the next neighboring contribution are observed. These changes are associated with variation in the Mn–Mn bond length. A small in-plane elongation (3%) is observed in the constrained films with respect to the unconstrained case.     

Structural and electrical properties of evaporated Fe thin films

Series of Fe thin films have been prepared by thermal evaporation onto glass and Si(1 0 0) substrates. The Rutherford backscattering (RBS), X-ray diffraction (XRD), Scanning electron microscopy (SEM) and the four point probe techniques have been used to investigate the structural and electrical properties of these Fe thin films as a function of the substrate, the Fe thickness t in the 76-431 nm range and the deposition rate. The Fe/Si samples have a 〈1 1 0〉 for all thicknesses, whereas the Fe/glass grows with a strong 〈1 0 0〉 texture; as t increases (>100 nm), the preferred orientation changes to 〈1 1 0〉. The compressive stress in Fe/Si remains constant over the whole thickness range and is greater than the one in Fe/glass which is relieved when t > 100 nm. The grain size D values are between 9.2 and 30 nm. The Fe/glass films are more electrically resistive than the Fe/Si(1 0 0) ones. Diffusion at the grain boundary seems to be the predominant factor in the electrical resistivity ρ values with the reflection coefficient R greater in Fe/glass than in Fe/Si. For the same thickness (100 nm), the decrease of the deposition rate from 4.3 to 0.3 Å/s did not affect the texture and the reflection coefficient R but led to an increase in D and a decrease in the strain and in ρ for both Fe/glass and Fe/Si systems. On the other hand, keeping the same deposition rate (0.3 Å/s) and increasing the thickness t from 76 to 100 nm induced different changes in the two systems.     

Spin-polarized scanning tunneling spectroscopy of dislocation lines in Fe films on W(1 1 0)

We have studied the spin-resolved electronic properties of dislocation lines on the Fe double-layer (DL) on W(1 1 0) by spin-polarized scanning tunneling spectroscopy. The data reveal that the dislocation lines are ferromagnetically ordered with the magnetic contrast exhibiting a pronounced bias-dependence. By comparing tunneling spectra which were measured on the pseudomorphic DL and at different lateral separation from the dislocation line, we find a pronounced shift of a peak which originally appears at positive sample bias towards the Fermi level _EF$E_{\mathrm{F}}$. In contrast, the binding energy of a peak just below _EF$E_{\mathrm{F}}$ remains constant but increases in intensity. This causes a pronounced modification of the bias voltage-dependent magnetic asymmetry.     

Synthesis and characterization of porous crystalline SiC thin films prepared by radio frequency reactive magnetron sputtering technique

Hexagonal SiC thin films have been deposited using radio frequency reactive magnetron sputtering technique by varying the substrate temperature and other deposition conditions. Prior to deposition surface modification of the substrate Si(1 0 0) played an important role in deposition of the hexagonal SiC structure. The effect of substrate temperature during deposition on structure, composition and surface morphology of the SiC films has been analyzed using atomic force microscopy, Fourier transform infrared spectroscopy and spectroscopic ellipsometry. X-ray diffraction in conventional θ-2θ mode and omega scan mode revealed that the deposited films were crystalline having 8H-SiC structure and crystallinity improved with increase of deposition temperature. The bonding order and Si-C composition within the films showed improvement with the increase of deposition temperature. The surface of thin films grew in the shape of globes and columns depending upon deposition temperature. The optical properties also showed improvement with increase of deposition temperature and the results obtained by ellipsometry reinforced the results of other techniques.     

Novel fabrication of net-like and flake-like Fe doped TiO2 thin films

New morphologies of net-like and flake-like TiO₂ thin films with different concentrations of Fe dopant were successfully fabricated by micro-arc oxidation (MAO) process of Ti plates and a subsequent chemical treatment of the as-prepared MAO-TiO₂ thin films. It was found that Fe ions can be easily introduced into the MAO-TiO₂ samples with the increase concentration of K₄(FeCN)₆·3H₂O precursor, and the amount of Fe determined the morphologies of TiO₂ thin films after chemical treatment; net-like morphology was observed with low Fe dopant, while it transformed to a flake-like one when Fe exceeds 1.7 at.%. UV-vis spectroscopy test showed that the absorption edge of the Fe ions doped TiO₂ thin films with new morphologies has an obvious red shift.     

Fe3O4/MgO(100)薄膜外场诱导电阻变化特性

采用激光分子束外延（L-MBE）方法,以MgO(100)为基底生长了Fe3O4单晶薄膜, 研究了Fe3O4/MgO(100)薄膜外场（温度、磁和激光场）诱导电阻变化特性。X射线衍射(XRD)分析表明Fe3O4薄膜是沿MgO(200)晶面外延生长的单晶薄膜;反射高能电子衍射（RHEED）强度振荡曲线分析表明Fe3O4薄膜表面平整,而且生长模式为2维层状生长;原子力显微镜（AFM）分析表明Fe3O4薄膜表面粗糙度为0.201 nm,说明薄膜表面达到原子级平整度。外场作用下Fe3O4薄膜的电阻测试表明:薄膜样品的电阻在120 K(Verwey转变温度)出现一峰值,略微下降后继续增大, 展现出半导体型的导电特性; 在激光作用下,整个测量温度范围内薄膜样品的电阻减小,样品展示出瞬间光电导的特性;从降温曲线可以看出, Verwey转变温度由无激光作用时的120 K上升到有激光作用时的140 K; 光致电阻变化率随着温度的降低而增大,这主要是由于激光作用导致电荷有序态的退局域化。     

Magnetization reversal processes in FeSm thin films

We have investigated the in-plane magnetization reversal in FeSm thin films and discovered that it can be controlled through an induced anisotropy. For films with an induced easy direction, reversal is ultra fast and can be characterized approximately using the Fatuzzo model. In films with no pronounced induced easy axis, the reversal is much slower and can be described using a logarithmic model. We have also investigated the short time (1–50 s) dependence of the remanent coercivity and fitted to logarithmic equations. For films with no pronounced easy axis, the time dependence of the coercivity correlates with the film thickness, indicating that the switching volume scales with thickness. For films with an induced easy direction, the time dependence of the coercivity is essentially constant, independent of film thickness, indicating no scalable switching volume.     

化学水浴法和磁控溅射法制备硫化镉薄膜的性能研究

以氯化铵、氯化镉、氢氧化钾和硫脲为反应物采用化学水浴法制备了硫化镉薄膜,为了作对比研究,采用射频磁控溅射以硫化镉为靶材,氩气为溅射气体,制备了硫化镉薄膜。采用X射线衍射、扫描电子显微镜和紫外-可见光光谱仪分别表征了硫化镉薄膜的结构、形貌和光学吸收特性。结果表明,采用以上两种方法制备的硫化镉均具有(002)择优取向,溅射法制备的硫化镉薄膜较致密,薄膜表面较光滑,平均晶粒尺寸在20～30nm;水浴法制备的硫化镉薄膜颗粒尺寸较小,缺陷较多。除了在短波段溅射所得硫化镉薄膜的透过率略差于水浴法所得硫化镉薄膜之外,溅射法制备的硫化镉薄膜的性能整体上优于水浴法制备的薄膜。两种方法制备的硫化镉薄膜的能隙在2.3～2.5eV。     

Discontinuity in heat capacity of Fe0.5Co0.5(110) alloy thin films

In this work we calculate heat capacity of alloy thin films of FeCo on the surface of the plane (110), using three parameters, the concentration x(i), the lattice long range order parameter t(i) and the magnetic order parameter σ(i), being i the number of layers of the thin film. The formulations reported by Hill [1] in the context of small particles and Valenta's model [2] can be applied to the film structure when we treat a thin film as a system divided into subsystems equivalent to two-dimensional parallel layers. The FeCo bulk alloy is completely homogeneous while a thin film have spatial discontinuities in their surfaces. We consider three ferromagnetic thin films formed by 11, 15 and 19 layers in the Helmholtz's free energy, which is minimized applying their first partial derivatives with respect to chemical composition, long range order parameter and magnetic order parameter. We calculate internal energy and heat capacity as a function of temperature and we verify that have two jumps as are reported in literature for the bulk; there are many results of bulk or surface effects of FeCo, but no enough results about ferromagnetic FeCo thin films and this fact does this work interesting.     

Solid-state synthesis in Ni/Fe/MgO(001) epitaxial thin films

Solid-state synthesis in Ni/Fe/MgO(001) bilayer epitaxial thin films has been studied experimentally. The phase sequence Fe/Ni→(～350°C)Ni₃Fe→(～400°C)NiFe→(～ 550°C)γ_par is formed as the annealing temperature increases. The crystal structure in the invar region consists of epitaxially intergrown single-crystal blocks consisting of the paramagnetic γ_par and ferromagnetic NiFe phases, which satisfy the orientation relationship [100](001)NiFe ∥ [100](001) γ_par. It has been shown that the nucleation temperatures of the Ni₃Fe, NiFe, and γ_par phases coincide with the temperatures of solid-state transformations in the Ni-Fe system.     

Morphology and defect structure of the CeO2(1 1 1) films grown on Ru(0 0 0 1) as studied by scanning tunneling microscopy

The morphology of ceria films grown on a Ru(0 0 0 1) substrate was studied by scanning tunneling microscopy in combination with low-energy electron diffraction and Auger electron spectroscopy. The preparation conditions were determined for the growth of nm-thick, well-ordered CeO₂(1 1 1) films covering the entire surface. The recipe has been adopted from the one suggested by Mullins et al. [D.R. Mullins, P.V. Radulovic, S.H. Overbury, Surf. Sci. 429 (1999) 186] and modified in that significantly higher oxidation temperatures are required to form atomically flat terraces, up to 500 Å in width, with a low density of the point defects assigned to oxygen vacancies. The terraces often consist of several rotational domains. A circular shape of terraces suggest a large variety of undercoordinated sites at the step edges which preferentially nucleate gold particles deposited onto these films. The results show that reactivity studies over ceria and metal/ceria surfaces should be complemented with STM studies, which provide direct information on the film morphology and surface defects, which are usually considered as active sites for catalysis over ceria.     

Magnetization in permalloy thin films

Thin films of permalloy (Ni₈₀Fe₂₀) were prepared using an Ar+N₂ mixture with magnetron sputtering technique at ambient temperature. The film prepared with only Ar gas shows reflections corresponding to the permalloy phase in X-ray diffraction (XRD) pattern. The addition of nitrogen during sputtering results in broadening of the peaks in XRD pattern, which finally leads to an amorphous phase. The M-H loop for the sample prepared with only Ar gas is matching well with the values obtained for the permalloy. For the samples prepared with increased nitrogen partial pressure the magnetic moment decreased rapidly and the values of coercivity increased. The polarized neutron reflectivity measurements (PNR) were performed in the sample prepared with only Ar gas and with nitrogen partial pressure of 5 and 10%. It was found that the spin-up and spin-down reflectivities show exactly similar reflectivity for the sample prepared with Ar gas alone, while PNR measurements on 5 and 10% sample show splitting in the spin-up and spin-down reflectivity.      

Optical and electrical properties of SnO2:Sb thin films deposited by oblique angle deposition

The antimony doped tin oxide (SnO₂:Sb) (ATO) thin films were prepared by oblique angle electron beam evaporation technique. X-ray diffraction, field emission scanning electron microscopy, UV-vis-NIR spectrophotometer and four-point probe resistor were employed to characterize the structure, morphology, optical and electrical properties. The results show that oblique angle deposition ATO thin films with tilted columns structure are anisotropic. The in-plane birefringence of optical anisotropy is up to 0.035 at α = 70°, which means that it is suitable as wave plate and polarizer. The electrical anisotropy of sheet resistance shows that the sheet resistance parallel to the deposition plane is larger than that perpendicular to the deposition plane and it can be changed from 900 Ω/□ to 3500 Ω/□ for deposition angle from 40° to 85°, which means that the sheet resistance can be effectively tuned by changing the deposition angle. Additionally, the sandwich structure of SiO₂ buffer layer plus normal ATO films and oblique angle deposition ATO films can reduce the resistance, which can balance the optical and electrical anisotropy. It is suggested that oblique angle deposition ATO thin films can be used as transparent conductive thin films in solar cell, anti-foggy windows and multifunctional carrier in liquid crystal display.     

Carbon films grown on Pt(1 1 1) as supports for model gold catalysts

Carbon films were grown on a Pt(1 1 1) single crystal by ethylene decomposition at elevated temperatures (1000-1300 K). Depending on the preparation conditions, different carbon structures formed on the metal surface such as flat and curved graphitic layers, carbon particles and carbon nanowires. Although these carbon films exhibited a high density of surface defects, gold interacted only weakly with the carbon surface. CO adsorption on the Au/carbon systems was very similar to that observed for various Au/oxide systems previously studied. This finding strongly indicates that CO adsorption on gold is essentially independent of the nature of support.     

Composition and morphological characteristics of chemically sprayed fluorine-doped zinc oxide thin films deposited on Si(1 0 0)

Fluorine-doped zinc oxide thin films (ZnO:F) were deposited on Si(1 0 0) substrates by the chemical spray technique (CST) from an aged-solution. The effect of the substrate temperature on the morphology and composition of the ZnO:F thin films was studied. The films were polycrystalline, with a preferential growth along the ZnO (0 0 2) plane, irrespective of the deposition temperature. The average crystal size within the films was ca. 35 nm and the morphology of the surface was found to be dependent on the substrate temperature. At low substrate temperatures irregular-shaped grains were observed, whereas at higher temperatures uniform flat grains were obtained. Elemental analysis showed that the composition of the films is close to stoichiometric ZnO and that samples contain quite a low fluorine concentration, which decreases as a function of the deposition temperature.     

Cu-In-O composite thin films deposited by reactive DC magnetron sputtering

Cu-In-O composite thin films were deposited by reactive DC magnetron sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/vis spectrophotometer, four-probe measurement and Seebeck effect measurement, etc. The samples contain Cu, In and O. The ratios of Cu to In and O to In increase with increase in O₂ flow rates. The ratio of Cu to In is over 1 and this suggests that Cu is in excess. The obtained Cu-In-O thin films are very possibly made of rhombohedral In₂O₃ and monoclinic CuO. Transmittance of the films decreases with increase in O₂ flow rate. The decrease in transmittance results from increase in Cu content in the films. The optical band gap of all the samples is estimated to be 4.1-4.4 eV, which is larger than those of In₂O₃ and CuO. The sheet resistance of the films decreases with increase in O₂ flow rate. Conductivity of the films is a little low, due to the addition of Cu and the poor crystalline quality of the film. The conduction behavior of the films is similar to that of In₂O₃ and the conduction mechanism of Cu-In-O thin films is through O vacancy.     

Kinetic stabilization of Fe film on GaAs(1 0 0): An in situ X-ray reflectivity study

We study the growth of Fe films on GaAs(1 0 0) at a low temperature, 140 K, by in situ X-ray reflectivity (XRR) using synchrotron radiation. The XRR curves are well modeled by a single Fe layer on GaAs both at the growth temperature and after annealed at the room temperature. We found that the surface became progressively rougher during the growth with the growth exponent, β_S = 0.43 ± 0.14. The observed β_S is attributed to the restricted interlayer diffusion at the low growth temperature. The change of the interface width during growth was minimal. When the Fe film was annealed to room temperature, the surface smoothed, keeping the interface width almost unchanged. The confinement of the interface derives from that the diffusion of Ga and As proceeds via the inefficient bulk diffusion, and the overlying Fe film is kinetically stabilized.