Spin-dependent shot noise of inelastic transport through molecular quantum dots

Here we present a theoretical analysis of the effect of inelastic electron scattering on spin-dependent transport characteristics (conductance, current–voltage dependence, magnetoresistance, shot noise spectrum, Fano factor) for magnetic nanojunction. Such device is composed of molecular quantum dot (with discrete energy levels) connected to ferromagnetic electrodes (treated within the wide-band approximation), where molecular vibrations are modeled as dispersionless phonons. Non-perturbative computational scheme, used in this work, is based on the Green's function theory within the framework of mapping technique (GFT–MT), which transforms the many-body electron–phonon interaction problem into a single-electron multi-channel scattering problem. The consequence of the localized electron–phonon coupling is polaron formation. It is shown that polaron shift and additional peaks in the transmission function completely change the shape of considered transport characteristics.     

Spin-polarized current through a lateral double quantum dot with spin–orbit interaction

We study the spin-polarized current through a vertical double quantum dot scheme. Both the Rashba spin–orbit (RSO) interaction inside one of the quantum dots and the strong intradot Coulomb interactions on the two dots are taken into account by using the second-quantized form of the Hamiltonian. Due to the existence of the RSO interaction, spin-up and spin-down electrons couple to the external leads with different strengths, and then a spin polarized current can be driven out of the middle lead by controlling a set of structure parameters and the external bias voltage. Moreover, by properly adjusting the dot levels and the external bias voltages, a pure spin current with no accompanying charge current can be generated in the weak coupling regime. We show that the difference between the intradot Coulomb interactions strongly influences the spin-polarized currents flowing through the middle lead and is undesirable in the generation of the net spin current. Based on the RSO interaction, the structure we propose can efficiently polarize the electron spin without the usage of any magnetic field or ferromagnetic material. This device can be used as a spin-battery and is realizable using the present available technologies.     

Voltage-controllable spin-polarized transport through parallel-coupled double quantum dots with Rashba spin-orbit interaction

A spin device, consisting of parallel-coupled double quantum dots and three normal metal leads, is proposed to realize spin-polarized current without the help of magnetic field and magnetic material. Based on the Keldysh nonequilibrium Green function technique and equation of motion method, the spin-dependent current formula in each lead is derived. It is shown that not only a fully polarized current but also a tunable pure spin current can be obtained by modulating the structure parameters, strength of Rashba spin-orbit interaction and bias voltages properly. It further demonstrates the dependence of the spin-polarized current on the strength of the Rashba spin-orbit interaction.     

Spin-dependent Fano effect through parallel-coupled double quantum dots

Based on the nonequilibrium Green' function method, the spin-dependent Fano effect through parallel-coupled double quantum dots has been investigated by taking account of both Rashba spin-orbit interaction and intradot Coulomb interaction. It is shown that the quantum interference through the bonding, antibonding states and through their Coulomb blockade counterparts may result in two Breit-Wigner resonances and two Fano resonances in the conductance spectra. Moreover, the Fano lineshape of the two spin components can be modulated by Rashba spin-orbit interaction when the magnetic flux is switched on.     

Influence of inter-dot Coulomb repulsion and exchange interactions on conductance through double quantum dot

Conductance and other physical quantities are calculated in double quantum dots (DQD) connected in series in the limit of coherent tunnelling using a Green's function technique. The inter-dot Coulomb repulsion and the exchange interaction are studied by means of the Kotliar and Ruckenstein slave-boson mean-field approach. The crossover from the atomic to the molecular limit is analyzed in order to show how the conductance in the model depends on the competition between the level broadening (dot-lead coupling) and the dot-dot transmission. The double Kondo effect was found in the gate voltage characteristics of the conductance in the atomic limit. In the case, when each dot accommodates one electron, the Kondo resonant states are formed between dots and their adjacent leads and transport is dominated by hopping between these two resonances. In the molecular limit the conductance vanishes for sufficiently low gate voltages, which means the Kondo effect disappeared. For small dot-lead coupling the transport characteristics are very sensitive on the influence of the inter-dot Coulomb repulsion and the position of the local energy level. The resonance region is widened with increase of the inter-dot Coulomb interactions while the exchange interaction has opposite influence.     

Flux-dependent transport through an Aharonov-Bohm interferometer with embedded multiple coupled quantum dots

The electron transport through an Aharonov-Bohm (AB) interferometer with embedded four coupled quantum dots (QDs) is studied with the Green's function technique. The QDs are coupled to each other by the hopping integral tc. Two among them connect with the left lead and the other two with the right lead by the tunneling matrix element T which incorporates the effects of the applied magnetic field φ. The linear conductance spectra swap between the molecular levels and the atomic states by adjusting tc and T. Fano effect appears when the electrons tunnel through different channels contributed by different QDs energy levels, and the Fano resonance peaks split for large tc. The Fano factor can be manipulated by tc, T, φ, and the QD energy levels.     

ac field-induced Fano resonances in a parallel-coupled double quantum dot system

The effects of an ac electric field on the Fano resonance in a parallel-coupled double quantum dot system are investigated theoretically. The field can induce the photon-assisted Fano resonances for both symmetrical and asymmetrical parallel configurations. The magnitude and position of the photon-assisted Fano peak can be tuned by the ac field strength and frequency, respectively. Furthermore, the Fano resonance can appear with increasing the field frequency for both the symmetrical and asymmetrical configurations. This provides an efficient mechanism to control the Fano resonance. The photon-electron pumping effects for the symmetrical and asymmetrical cases are also studied in the weak- and strong-coupling regime.     

Transport properties of a double quantum dot molecule in the presence of impurity effects

In this Letter, we studied the electronic transport through a parallel-coupled double quantum dot (DQD) molecule including impurity effects at zero temperature. The linear conductance can be calculated by using the Green's function method. An obvious Fano resonance arising from the impurity state in the quantum dot is observed for the symmetric dot-lead coupling structure in the absence of the magnetic flux through the quantum device. When the magnetic flux is presented, two groups of conductance peaks appear in the linear conductance spectra. Each group is decomposed into one Breit-Wigner and one Fano resonances. Tuning the system parameters, we can control effectively the shapes of these conductance peaks. The Aharonov-Bohm (AB) oscillation for the magnetic flux is also studied. The oscillation period of the linear conductance with π, 2π or 4π may be observed by tuning the interdot tunneling coupling or the dot-impurity coupling strengths.     

Tunneling mechanism through the nonlinear electrical transport in Co/CoO particles with core-shell nanostructure

We investigate the nonlinear electrical transport as a function of temperature in Co/CoO nanoparticles having core-shell nanostructure. Nanoparticle was synthesized by sol-gel citrate precursor technique where core-shell nanostructure is confirmed by the high resolution Transmission Electron Microscopy. Current-voltage (I-V) characteristics are measured over the temperature range 20-295 K. I-V curve exhibits ohmic behaviour at 295 K. Nonlinear electrical transport is observed at low temperature (T) for T?275 K. Electrical transport properties have been interpreted in terms of tunneling mechanism where tunneling between ferromagnetic Co nanoparticles takes place through the antiferromagnetic CoO layer. Analysis of dynamic conductance (G=dI/dV) indicates that the inelastic tunneling via localized states of antiferromagnetic CoO layers is dominant in the transport mechanism at low temperature.     

Spin-dependent conductance in FM/quantum-dot/FM tunneling system

We present a theoretical study of the spin-dependent conductance spectra in a FM/semiconductor quantum-dot (QD)/FM system. Both the Rashba spin-orbit (SO) coupling in the QD and spin-flip scattering caused by magnetic barrier impurities are taken into account. It is found that in the single-level QD system with parallel magnetic moments in the two FM leads, due to the interference between different tunneling paths through the spin-degenerate level, a dip or a narrow resonant peak can appear in the conductance spectra, which depends on the property of the spin-flip scattering. When the magnetizations of the two FM leads are noncollinear, the resonant peak can be transformed into a dip. The Rashba SO coupling manifests itself by a Rashba phase factor, which changes the phase information of every tunneling path and can greatly modulate the conductance. When the QD has multiple levels, the Rashba interlevel spin-flip effect appears, which changes the topological property of the structure. Its interplay with the Rashba phase can directly tune the coupling strengths between dot and leads, and can result in switching from resonance into antiresonance in the conductance spectra.     

Andreev reflection in a quantum dot coupled to ferromagnetic and superconductor leads under magnetic fields

By employing the nonequilibrium Green's function, we investigate the spin-dependent linear Andreev reflection (AR) resonant tunneling through a quantum dot connected to a ferromagnetic lead and a superconducting lead, where the magnetization direction in the ferromagnetic lead can be tuned by one. We focus our attention on the effects of the magnetic fields on the AR conductance. One high conductance peak and one low conductance peak are developed in the linear AR conductance when a stronger magnetic field is considered. The interplay between the spin-flip scattering and the magnetic fields on the AR conductance are also studied.     

Charge and spin currents tunnelling through a toroidal carbon nanotube side-coupled with a quantum dot

We have investigated the mesoscopic transport through the system with a quantum dot (QD) side-coupled to a toroidal carbon nanotube (TCN) in the presence of spin-flip effect. The coupled QD contributes to the mesoscopic transport significantly through adjusting the gate voltage and Zeeman field applied to the QD. The compound TCN-QD microstructure is related to the separate subsystems, the applied external magnetic fields, as well as the combination of subsystems. The spin current component I_z^s is independent on time, while the spin current components I_x^s and I_y^s evolve with time sinusoidally. The rotating magnetic field induces novel levels due to the spin splitting and photon absorption procedures. The suppression and enhancement of resonant peaks, and semiconductor-metal phase transition are observed by studying the differential conductance through tuning the source-drain bias and photon energy. The magnetic flux induces Aharonov-Bohm oscillation, and it controls the tunnelling behavior due to adjusting the flux. The Fano type of multi-resonant behaviors are displayed in the conductance structures by adjusting the gate voltage V_g and the Zeeman field applied to the QD.     

Spin-polarized transport through a time-periodic non-magnetic semiconductor heterostructure

Spin-dependent Floquet scattering theory is developed to investigate the photon-assisted spin-polarized electron transport through a semiconductor heterostructure in the presence of an external electric field. Spin-dependent Fano resonances and spin-polarized electron transport through a laser irradiated time-periodic non-magnetic heterostructure in the presence of Dresselhaus spin-orbit interaction and a gate-controlled Rashba spin-orbit interaction are investigated. The electric field due to laser along with the spin-orbit interactions help to get spin-dependent Fano resonances in the conductance, whereas the external bias can be appropriately adjusted to get a near 80% spin-polarized electron transmission through heterostructures. The resultant nature of the Floquet scattering depends on the relative strength of these two electric fields.     

Intradot spin-flip Andreev reflection tunneling through a ferromagnet-quantum dot-superconductor system with ac field

We investigate Andreev reflection (AR) tunneling through a ferromagnet-quantum dot-superconductor (F-QD-S) system in the presence of an external ac field. The intradot spin-flip scattering in the QD is involved. Using the nonequilibrium Green function and BCS quasiparticle spectrum for superconductor, time-averaged AR conductance is formulated. The competition between the intradot spin-flip scattering and photon-assisted tunneling dominates the resonant behaviors of the time-averaged AR conductance. For weak intradot spin-flip scattering strengths, the AR conductance shows a series of equal interval resonant levels. However, the single-peak at main resonant level develops into a well-resolved double-peak resonance at a strong intradot spin-flip scattering strength. Remarkable, multiple-photon-assisted tunneling that generates photonic sideband peaks with a variable interval has been found. In addition, the AR conductance-bias voltage characteristic shows a transition between the single-peak to double-peak resonance as the ratio of the two tunneling strengths varies.     

Spin-dependent transport in cluster-assembled nanostructures: influence of cluster size and matrix material

Spin-dependent transport in granular metallic nanostructures has been investigated by means of a thermoelectric measurement. Cobalt clusters of well-defined size (〈n〉 = 15-600) embedded in copper and silver matrices show magnetic field responses of up to several hundred percent at low temperature. The experimental observations are attributed to spin mixing. The influence of cluster size and matrix are discussed.     

Effects of disorder on tunnel magnetoresistance in Fe/MgO/Fe junctions

Effects of lattice distortion and oxygen vacancy on tunnel magnetoresistance in Fe/MgO/Fe junctions are theoretically investigated. By treating the distortion in MgO as the random potential and performing numerical simulations based on the Kubo–Landauer formula, it is shown that the magnetoresistance ratio decreases with increasing randomness. Moreover, first-principles calculations within the density functional theory show that the defect states in the Fe/MgO cluster containing an oxygen vacancy induce no significant shift in the Fermi level.     

Equilibrium spin current induced by spin-orbital interaction in a quantum dot system

We report a theoretical study of the equilibrium spin current flowing in a quantum dot system. Two electrodes are the two-dimensional electron gas with Rashba or Dresselhaus spin-orbital interaction. By using the Keldysh Green's function technique, we demonstrated that a nonzero spin current can flow in the system without bias. At the weak coupling between electrodes and the quantum dot, the spin current is approximately proportional to the cross product of two average pseudo-magnetizations in two electrodes, which agrees with the result of the linear response theory; whereas at the opposite case, the strong coupling between the quantum dot and electrodes can lead to a non-sinusoidal behavior of the equilibrium spin current. These behaviors of the equilibrium spin current are similar to the Josephson current.     

Spin-Polarized Transport through the T-Shaped Double Quantum Dots with Fano-Kondo Interaction

We theoretically investigate the spin-polarized transport properties of the T-shaped double quantum dots coupled to two ferromagnetic leads by the Anderson Hamiltonian. The Hamiltonian is solved by means of the slave-boson mean-field theory. We calculate the density of states and the liner conductance in this system with both parallel and antiparallel lead-polarization alignments, and our results show that the transport properties of this system depend on both the tunnelling strength between the two dots and the spin-polarized strength p. This system is a possible candidate for spin valve transistors in the spintronics.     

Transport through a quantum dot subject to spin and charge bias

Spin and charge transport through a quantum dot coupled to external nonmagnetic leads is analyzed theoretically in terms of the non-equilibrium Green function formalism based on the equation of motion method. The dot is assumed to be subject to spin and charge bias, and the considerations are focused on the Kondo effect in spin and charge transport. It is shown that the differential spin conductance as a function of spin bias reveals a typical zero-bias Kondo anomaly which becomes split when either magnetic field or charge bias are applied. Significantly different behavior is found for mixed charge/spin conductance. The influence of electron-phonon coupling in the dot on tunneling current as well as on both spin and charge conductance is also analyzed.     

Quantum simulations of spin-relaxation and transport in copper

A quantum equation of motion method is applied to simulate conduction electron spin-relaxation and transport in the presence of the spin-orbit interaction and disorder. A spin-relaxation time of 25ps is calculated for Cu with a realistic low temperature resistivity of 3.2 μΩ cm – corresponding to a spin-diffusion length of about 0.4 μm. Spin-relaxation in a finite nanocrystallite of Cu is also simulated and a short spin-relaxation time (0.47 ps) is calculated for a crystallite with 7% surface atoms. The spin-relaxation calculated for bulk Cu is in good agreement with experimental evidence, and the dramatic nanocrystallite effect observed has important implications for nano-spintronic devices.