Luminescence centers in thin films of lead and bismuth tungstates

Luminescence spectra of thin films of PbWO₄ and Bi₂WO₆ are invesigated. The Alentsev-Fock method is used to separate the spectra into elementary components. The emission bands with maxima at 2.8 eV in PbWO₄ and at 2.93 eV in Bi₂WO₆ luminescence spectra are interpreted as the emission of self-localized Frenkel excitons. The bands with maxima at 2.35 and 1.75 eV in PbWO₄ and at 2.35 and 1.9 eV in Bi₂WO₆ are related to oxygen vacancies. L’vov State University, 50, Dragomanov St., L'vov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 1, pp. 143–145, January–February, 1998.     

Tunneling luminescence of Y2O3 and Sc2O3 ceramics

In the present work we investigate the tunneling luminescence (TL) of Y₂O₃, Y₂O₃:Eu, and Sc₂O₃ ceramics. From an analysis of the decay kinetics of the TL it is established that the recombinational processes are described by a model involving recombination with a complex interaction. In addition, using the method of partial light sums, we show that in the ceramics investigated the mechanisms of TL are the same and the majority of radiation-induced defects in pairs are removed to distances exceeding the radius of effective tunneling transitions with a time constant of 10–100 sec. In the Y₂O₃:Eu ceramics the distances between defects decrease. TL occurs in pairs whose electron component is F-centers that are thermally released at 176 K in the Y₂O₃ ceramics and 200 K in the Sc₂O₃ ceramics. The hole components of tunneling pairs are associated with centers that are thermally released at 110 and 122 K in the Y₂O₃ ceramics and at 121 and 146 K in the Sc₂O₃ ceramics. To whom correspondence should be addressed. I. Franko Lvov State University, 50, Dragomanov Str., Lvov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 5, pp. 649–651, September–October, 1999.     

Luminescence centers in bismuth-containing oxytungstate ceramics

We have studied the photoexcitation and luminescence spectra of Bi₂WO₆, Y₂WO₆ and Y₂WO₆:Bi ceramics. We used the Alentsev-Fock method to decompose the spectra into elementary components. The emission bands with maximum at 2.93 eV in the luminescence spectrum of Bi₂WO₆, 3.02 eV in the luminescence spectrum of Y₂WO₆, and 2.95 eV in the luminescence spectrum of Y₂WO₆:Bi are assigned to luminescence of self-localized Frenkel excitons. The bands with maxima at 2.35 eV and 1.90 eV in the spectrum of Bi₂WO₆, 2.25 eV and 1.75 eV in the spectrum of Y₂WO₆, and 2.35 eV and 1.85 eV in the spectrum of Y₂WO₆:Bi are connected with oxygen vacancies. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 5, pp. 688–691, September–October, 2007.     

Luminescence centers in yttrium silicate and germanate

Luminescence spectra for isostructural Y₂SiO₅ and Y₂GeO₅ are investigated. The spectra are resolved into elementary components by the Alentsev—Fock method. Bands with maxima in regions of 2.6, 2.3, and 2.05 eV in the spectra of Y₂SiO₅ luminescence and in regions of 2.55, 2.25, and 2.0 eV in the spectra of Y₂GeO₅ luminescence are considered as radiative recombination of excited associative donor-acceptor Y³⁺−O²⁻ pairs. The indicated bands are related to certain distances between yttrium (the donor) and oxygen (the acceptor). A band with a maximum of 2.95 eV in Y₂SiO₅ and 3.0 eV in Y₂GeO₅ occurs in recombination of electrons with holes trapped by an anionic sublattice. I. Franko L’vov State University, 50, Dragomanov St., L’vov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 4, pp. 528–531, July–August, 1998.     

Luminescence centers in ceramics of yttrium, scandium, and bismuth oxytungstates

An investigation is made of the luminescence spectra of Me₂WO₆ ceramics (Me=Y, Sc, Bi). The spectra were decomposed into elementary components by the Alentsev—Fock method. Radiation hands with a maximum at 3.02 eV in the Y₂WO₆ luminescence spectrum, at 2.8 eV in the ScWO₆ spectrum, and at 2.93 eV in the Bi₂WO₆ spectrum are assigned to the light emission of self-localized Frenkel excitons. The bands with maxima at 2.25 and 1.75 eV in the Y₂WO₆ spectrum, at 2.36 and 1.9 eV in the Sc₂WO₆ spectrum, and at 2.35 and 1.9 eV in the Bi₂WO₆ spectrum are related to oxygen vacancies. Translated from Zhurnal Prikladnoi Spektroskopii, Vol 67, No. 2, pp. 273–275, March–April, 2000.     

Luminescence excitation spectra and characteristics of luminescence centers with overlapping absorption bands

For an ensemble of different types of luminescence centers with overlapping absorption bands, with no restrictions on the optical densities, we have obtained relations describing the luminescence excitation spectra for each type of center. We consider transformations of the relations in some limiting cases. We suggest a procedure for using the equations obtained to determine the characteristics of the luminescence centers. Some of these procedures have been experimentally implemented in study of intrinsic radiation color centers in lithium fluoride crystals. We have determined the ratios of the luminescence quantum yields for F₂ and F₃⁺ color centers, and we have observed that a major role is played by nonradiative transitions in deactivation of the first excited singlet state of F₃⁺ centers. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 365–371, May–June, 2008.     

Luminescence spectroscopy of Eu3+ and Mn2+ ions in MgGa2O4 spinel

Photoluminescence and excitation spectra of the spinel-type MgGa₂O₄ with 0.5 mol. % Mn²⁺ ions and Eu³⁺ content from 0 to 8 mol. % have been investigated in this work at room temperature. Polycrystalline samples were synthesized via high-temperature solid-state reaction method. Photoluminescence spectra of all samples exhibit host emission presented by a broad “blue” band peaking ∼430 nm, which consists of at least three elementary bands that correspond to different host defects. Excitation of the host luminescence showed the broad band with a maximum at 360 nm. Characteristic bands of d–d transitions of Mn²⁺ ions and f–f transitions of Eu³⁺ ions together with charge-transfer bands (CTB) of these ions were also found on the excitation spectra. Mn²⁺ and Eu³⁺ co-doped samples emit in green and red spectral regions. Mn²⁺ ions are responsible for the green emission band at 505 nm (⁴Т₁→⁶А₁ transition). The studies of photoluminescence spectra of activated samples with different Eu³⁺ ions content show characteristic f–f luminesecence of Eu³⁺ ions. The maximum of Eu³⁺ emission was found at 618 nm (⁵D₀→⁷F₂) and optimal concentration of activator ions was around 4 mol. %.     

Luminescence of Bismuth‐Activated Ceramics of Yttrium and Scandium Oxides

The luminescence spectra of Y₂O₃:Bi and Sc₂O₃:Bi ceramics have been investigated. The spectra have been resolved into elementary components by the Alentsev–Fock method. It has been established that the luminescence is attributed to emission centers of three types, two of which are due to the replacement of Y³⁺ (or Sc³⁺) by Bi³⁺ at the nodes of the crystal lattice of Y₂O₃ (or Sc₂O₃) with the point symmetry C ₂ and C _3i . The emission center Bi³⁺ in the position C_3i leads to the appearance of blue luminescence with maxima at 3.03 eV for Y₂O₃:Bi and at 3.05 eV for Sc₂O₃:Bi; this luminescence is attributed to the transition ³ P ₁–¹ S ₀. The emission center Bi³⁺ in the position C ₂ initiates green luminescence (which is also related to the ³ P ₁–¹ S ₀ transition in Bi³⁺) with a maximum in the region of 2.40 eV in Y₂O₃:Bi and in the region of 2.46 eV in Sc₂O₃:Bi. The red luminescence band with maxima at 1.85 eV in Y₂O₃:Bi and at 1.95 eV in Sc₂O₃:Bi is related to the presence of structural defects.     

Investigation of the mechanisms of luminescence of ZnS−Ag(Al) single crystals by the method of time-resolved spectroscopy

By the methods of amplitude and time-resolved spectroscopies the mechanisms of luminescence of ZnS−Ag(Al) single crystals differing in dislocation density are studied in pulse laser excitation. Experimental results are analyzed based on the theory of donor—acceptor pairs and the theory of centers surrounded with defect clouds. The data obtained are in agreement with the second theory. Ural State Technical University, 19 Mir Str., Ekaterinburg, 620002, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 6, pp. 857–860, November–December, 1999.     

Nonlinear Luminescence Quenching in Eu2O3

We report a laser spectroscopic investigation of saturation effects in the spectra and dynamics of Eu₂O₃. The saturation effects occur at high laser intensity and appear as dips in the center of the fluorescence excitation lines and as a shortening of the ⁵D₀ excited‐state decay curve. The saturation effects are observed in nanoparticles, micrometer‐sized particles, and a fused crystal of monoclinic‐phase Eu₂O₃ and in micrometer‐sized particles of cubic‐phase Eu₂O₃. We attribute the mechanism of the nonlinear luminescence quenching to upconversion by energy transfer.     

X-Ray Luminescence of Defects in Spinel Single Crystals

The flareup of x-ray luminescence in spinel single crystals (MgAl₂O₄) depending on the time of x-ray irradiation and the decay of fluorescence depending on the time elapsed after the termination of irradiation have been investigated. These dependences were measured at different powers of the irradiation dose (power of the x-ray tube) and at different temperatures of the samples. The experimental results suggest the existence of large-size complexes of defects, which include antisite defects and impurity ions, the exchange of charge carriers between which during and after irradiation leads to luminescence of the impurity ions. Transfer of charge carriers between isolated elements of the pairs of antisite defects (not interacting with the impurity ions) leads to the formation of a competing channel of recombination luminescence in the UV region of the spectra. The decay of fluorescence attributable to transitions in the Mn²⁺ and Cr³⁺ ions depending on the time elapsed after the termination of x-ray irradiation points to the existence of various combinations of antisite defects in the surroundings of these ions.     

Luminescence Centers of Pr3+ in Gallium Sulfide Single Crystals

The luminescence and luminescence excitation spectra of GaS:Pr single crystals are investigated. It is shown that in the single crystals of gallium sulfide the luminescence centers can be at two positions. The symmetry of the environment and the structure of these centers are considered.     

Luminescence centers in cubic boron nitride

Complex and multiband photoluminescence spectra for GB and HBN centers in single crystals of cubic boron nitride (cBN) were recorded in the wavelength ranges 385–400 nm and 365–395 nm and the nature of these centers was studied. The use of models involving resonance vibrations and strongly shifted configuration diagrams for the electronic ground state and excited state made it possible to associate formation of the GB-1 center with the presence of tungsten impurity in cBN. It was established that the HBN band in the 300–350 nm range of the cathodoluminescence spectra of cBN polycrystals, single crystals, and micropowders is associated with luminescence centers present in microinclusions of graphite-like boron nitride (hBN). The nature of the hBN band is tentatively interpreted within the model of recombination of donor and acceptor defects in hBN: respectively nitrogen vacancies and carbon atoms in positions substituting for nitrogen. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 2, pp. 241–246, March–April, 2007.     

Luminescence of Thin Bi2W2O9 Films

The luminescence spectra of thin Bi₂W₂O₉ films have been investigated. The spectra were separated into elementary components by the Alentsev–Fock method. The radiation band with a maximum at 2.43 eV in the luminescence spectrum of Bi₂W₂O₉ has been assigned to the Frenkel autolocalized excitons. The luminescence bands with maxima at 2.10 and 1.90 eV have been assigned to the emission of the centers whose energy levels are located in the forbidden band. The luminescence of the Bi₂W₂O₉ films is due to the emission of the WO₆ complex.     

Luminescence centers in Pb2Bi6O11 and Sn2Bi6O11 ceramics

We have studied the luminescence spectra and luminescence excitation spectra of Pb₂Bi₆O₁₁ and Sn₂Bi₆O₁₁ ceramics at 80 K. We have used the Alentsev-Fock to decompose the spectra into elementary components. We have established that the luminescence spectra of Pb₂Bi₆O₁₁ and Sn₂Bi₆O₁₁ ceramics contain three elementary bands each with maxima at 2.60, 2.32, 12.93 eV and 2.62, 2.30, 2.00 eV. Comparison of the data obtained with the results of a study of the luminescence spectra for a series of bismuth-containing oxide compounds suggest that luminescence of Pb₂Bi₆O₁₁ and Sn₂Bi₆O₁₁ is due to radiative processes in structural complexes containing a bismuth ion in a nearest-neighbor oxygen environment. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 5, pp. 597–600, September–October, 2006.     

Local trapping sites in Y2O3 and Sc2O3 ceramics

Heat-stimulated luminescence (HSL) of x-ray-irradiated Y₂O₃, Y₂O₃:Eu, and Sc₂O₃ ceramics samples is investigated. An analysis of the form of the elementary contours making the HSL curves shows that recombination processes at the HSL peaks with maxima at 110, 122, 176, 185, 200, and 247 K in Y₂O₃. ceramics and with those at 121, 136, 200, 215, and 221 K in Sc₂O₃ are described in terms of linear kinetics. The spectral composition of the HSL of the ceramic obtained is studied. Some methods are employed to determine the activation energies and frequency factors corresponding to the HSL peaks. It is established that the recombination processes occurring upon release of the trapping sites in the Y₂O₃ and Sc₂O₃ ceramic samples are conditioned by diffusion-controlled tunneling recombination due to heat-stumulated migration of V_k-centers. L'vov I. Franko State University, 50, Dragomanov St., L'vov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 3, pp. 348–353, May–June, 1997.     

Luminescence centers in thin films of yttrium oxide and yttrium-aluminum garnet activated with bismuth

Luminescence spectra and photoluminescence excitation spectra of Y₂O₃:Bi and Y₃Al₅O₁₂:Bi thin films were investigated. Luminescence was stimulated by the emission from two types of centers that were associated with the substitution of Bi³⁺ for Y³⁺ in sites of the crystal lattice of Y₂O₃ (Y₃Al₅O₁₂) with point symmetries C₂ and C_3i (D₂ and C_3i). The emission of Bi³⁺ in the site with point symmetry C_3i causes blue luminescence in both Y₂O₃:Bi and Y₃Al₅O₁₂:Bi films with maxima at 3.03 eV and 3.15 eV, respectively, that is related to the ³P₁-¹S₀ transition. The emission of Bi³⁺ in the site with point symmetry C₂ gives green luminescence in Y₂O₃:Bi with the maximum at 2.40 eV that is also related to the ³P₁-¹S₀ transition. The emission of Bi³⁺ in the site with point symmetry D₂ leads to ultraviolet luminescence in Y₃Al₅O₁₂:Bi with the maximum at 3.75 eV that corresponds to the ³P₁-¹S₀ transition. The red luminescence band with the maximum at 1.85 eV in Y₂O₃:Bi is due to the presence of structural defects. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 2, pp. 202–207, March–April, 2008.     

Luminescence of defect centres in Hg2Cl2

Abstract

Luminescence in Hg₂Cl₂, crystals excited with UV light is investigated in the spectral region 0.8–2.25 eV. Measurements are performed on as-grown samples and on samples previously exposed to UV light at RT. Six emission bands are found which depend on the concentration of the photochemical entities produced by irradiation of the crystals at RT. It is concluded that infra-red (IR) luminescence of Hg₂Cl₂ originates from crystal defects. The observed emission bands are tentatively attributed to the emission of (HgCI_xBr_3?x)^? and (HgCl_xBr_4?x)^2? complexes formed with residual Br impurities. Centres responsible for IR Hg₂Cl₂ emissions are excited: (i) via excitons of Hg₂Cl₂, (ii) via excited states of isolated Hg₂Br₂ molecules, and (iii) resonantly through the excitation bands of defect centres.     

Luminescence of Rb3UO2F5 Crystals in Selective Laser Excitation

The characteristic features of the low-temperature (6 K) luminescence of Rb₃UO₂F₅ crystals in resonant selective laser excitation within an inhomogeneously broadened contour of a phonon-free line have been investigated. The presence of a nonselective spectral migration of the electron-excitation energy over a subsystem of uranylfluoride complexes is established. The energy migration is due to the Raman scattering of crystal phonons and is associated with the interaction of the lower excited energy levels of the uranyl complex, which leads to a disturbance of adiabaticity.