La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> thin films on SrTiO<Subscript>3</Subscript> and CaTiO<Subscript>3</Subscript> buffered Si substrates: structural,static, and dynamic magnetic properties

Nearly 50-nm thick La_0.7Sr_0.3MnO₃ (LSMO) films were grown on Si substrates using molecular beam epitaxy on (001) Si substrates over-layered by a 20 nm thick SrTiO₃ (STO) or by a 20 nm thick CaTiO₃ (CTO) film. In addition, a reference LSMO film was directly deposited on a (001) STO substrate by pulsed laser deposition. For all the samples, X-ray diffraction revealed an excellent epitaxy of the LSMO film and small mosaicity around (001), with in-plane [100] and [010] cubic axes. The LSMO/CTO films are in-plane compressed while the LSMO/STO ones are in-plane extended. The temperature dependence of their static magnetic properties was studied using a SQUID, showing a Curie temperature overpassing 315 K for all the samples. Hysteresis loops performed at room temperature (294 K) with the help of a vibrating sample magnetometer (VSM) are also discussed. At 294 K Micro-strip ferromagnetic resonance (MS-FMR) was used to investigate the dynamic magnetic properties. It allows concluding to a strong anisotropy perpendicular to the films and to a weak fourfold in-plane anisotropy with easy axes along the [110] and [1[`1]0 1\bar{1}0 ] directions. Their values strongly depend on the studied sample and are presumably related to the strains suffered by the films.     

Photoluminescence of ZnO nanowires grown on sapphire (1 1 2¯ 0) substrates

ZnO nanowires were fabricated on c-plane (0 0 0 1), a-plane (1 1 2¯ 0) sapphire, and boron doped p-type (1 0 0) Si substrates in vacuum furnace by simple physical vapor deposition. Room temperature photoluminescence spectra of the nanowires show the near band-edge emission and the deep-level green light emission. The ZnO nanowires formed on sapphire (1 1 2¯ 0) substrates exhibited enhancement on optical properties and better crystalline structures than those of nanowires grown on other substrates. The formation mechanism and the effect of substrate direction on structural and optical properties of the nanowires are discussed.     

Characterization of InN epilayers grown on Si(1 1 1) substrates at various temperatures by MBE

InN films have been grown by plasma-assisted molecular beam epitaxy (PAMBE) and characterized by various technologies. It was found that the structural, optical and electrical properties can be drastically improved by raising growth temperature from 440 to 525 °C. Grainy morphology was found in the grain size was found in atomic force microscope images. The large grain size was about 360 nm for a film grown at 525 °C. These films exhibited Wurtzite structure with a c/a ratio ranging from 1.59 to 1.609. The dislocation densities estimated by X-ray diffraction techniques closely agreed with those analyzed by plan-view transmission electron microscopy. Photoluminescence (PL) studies confirmed near band-to-band transitions and the narrowest low-temperature PL peak width was found to be 24 meV at 0.666 eV. Carrier concentrations decreased from 1.44×10¹⁹ to 1.66×10¹⁸ cm⁻³ and Hall mobility increased from 226 to 946 cm² V⁻¹ s⁻¹ as the growth temperature is progressively increased from 440 to 525 °C. Raman spectra also indicated improved crystal quality as the growth temperature was raised.     

In situ magneto-optical Kerr effect study of uncovered Fe films on ZnSe(0 0 1)

The magnetic properties of uncovered Fe/ZnSe/GaAs(1 0 0) ultrathin films have been determined in situ by magneto-optical Kerr effect (MOKE). Fe films up to 10 monolayers (ML) thick were deposited on c(2×2) Zn-rich ZnSe/GaAs(0 0 1) surfaces at 180 °C. We have studied the thickness dependence of the in-plane lattice parameter of the Fe films and of the MOKE hysteresis loops in the longitudinal geometry, at 150 K, under magnetic fields up to 0.1 T applied along the [1 1 0] and [1-1 0] directions of the ZnSe(0 0 1). Reflection high energy electron diffraction show that in the low thickness regime the Fe films present an in-plane structural anisotropy characterized by an expansion along the [1 1 0] direction. Hysteretic loops were obtained only starting from ∼5 ML Fe. We found the onset of an uniaxial magnetic anisotropy with [1 1 0] magnetic easy axis at 7 ML Fe.     

Superparamagnetic Ni:SiO<Subscript>2</Subscript>–C nanocomposites films synthesized by a polymeric precursor method

In this work, we report on the magnetic properties of nickel nanoparticles (NP) in a SiO₂–C thin film matrix, prepared by a polymeric precursor method, with Ni content x in the 0–10 wt% range. Microstructural analyses of the films showed that the Ni NP are homogenously distributed in the SiO₂–C matrix and have spherical shape with average diameter of ~10 nm. The magnetic properties reveal features of superparamagnetism with blocking temperatures T _B ~ 10 K. The average diameter of the Ni NP, estimated from magnetization measurements, was found to be ~4 nm for the x = 3 wt% Ni sample, in excellent agreement with X-ray diffraction data. M versus H hysteresis loops indicated that the Ni NP are free from a surrounding oxide layer. We have also observed that coercivity (H _C) develops appreciably below T _B, and follows the H _C ∝ [1 – (T/T _B)^0.5] relationship, a feature expected for randomly oriented and non-interacting nanoparticles. The extrapolation of H _C to 0 K indicates that coercivity decreases with increasing x, suggesting that dipolar interactions may be relevant in films with x > 3 wt% Ni.     

Magnetic shape anisotropy calculations of Fe nanostructures at the Si/Fe(1 1 1) interface

The influence of Si capping layers on the magnetic properties of thin Fe films grown on Si(1 1 1) has been studied by means of shape anisotropy calculations. Fe surface morphology simulations are realized using experimental STM data. Surface modifications induced by the interaction between the Si overlayer and the Fe surface are performed in agreement with the model proposed in a previous work by Stephan et al. [J. Magn. Mater. 293 (2005) 746]. Calculations of the uniaxial anisotropy energy constant K_u are then performed on the modified Fe surface morphology for different Si deposition geometries as proposed in the model. The relevant data deduced by this method such as anisotropy constants and their related easy axis direction, are directly compared to the experimental ones obtained by ex situ magneto-optical Kerr effect (MOKE) measurements at room temperature using the transverse bias initial inverse susceptibility and torque (TBIIST) method. We show that a very good agreement between those results leads to a confirmation of the proposed model.     

Magnetic Properties of Fe/Ni and Fe/Co Multilayer Thin Films

In this work, the magnetic and transport properties of Fe/SiO₂/Ni and Fe/SiO₂/Co multilayers grown on Si/SiO₂ substrates have been studied. The samples have been prepared by two-stage deposition process. In the first stage, Fe layer and SiO₂ interlayer of both samples are grown by ion beam deposition technique at room temperature. Then the samples are taken out to ambient atmosphere and loaded into a pulse laser deposition (PLD) chamber. Prior to the deposition of top layer, the samples are cleaned by annealing at 150 °C. In the second stage, Ni (or Co) layer is prepared by PLD technique at room temperature. The thickness of deposited layers has been measured by Rutherford back scattering (RBS). Magnetic properties of ferromagnetic bilayers have been investigated by room-temperature ferromagnetic resonance (FMR) and vibrating sample magnetometer (VSM) techniques. Standard four-point magneto-transport measurements at various temperatures have been performed. Two-step switching in the in-plane hysteresis loops of Fe/SiO₂/Ni and Fe/SiO₂/Co samples is observed. A crossing in the middle of hysteresis loops of both samples points to a weak antiferromagnetic interaction between the magnetic layers of the stacks. Saturation magnetization values have been obtained from the VSM measurements of samples with DC magnetic field perpendicular to the films surface. Magneto-transport measurements have shown the predominant contribution of anisotropic magnetic resistance both at room and low temperatures. FMR studies of Fe/SiO₂/Ni and Fe/SiO₂/Co samples have revealed additional non-uniform (surface and bulk SWR) modes, which behavior has been explained in the framework of the surface inhomogeneity model. An origin of the antiferromagnetic interaction has been discussed.     

Comparison of sulfur interaction with hydrogen on Pt(1 1 1), Ni(1 1 1) and Pt3Ni(1 1 1) surfaces: The effect of intermetallic bonding

Adsorption strengths of hydrogen and sulfur both individually and together as co-adsorbates were investigated on Pt(1 1 1), Ni(1 1 1) and Pt₃Ni(1 1 1) surfaces using density functional theory in order to determine the effect of metal alloying on sulfur tolerance. The adsorption strengths of H and S singly follow the same trend: Ni(1 1 1) > Pt(1 1 1) > Pt₃Ni(1 1 1), which correlates well with the respective d-band center positions of each surface. We find that the main effect of alloying is to distort both the sub-layer structure and the Pt overlayer resulting in a lowered d-band. For all three surfaces, the d-band shifts downward non-linearly as a function of S coverage. Nearly identical decreases in d-band position were calculated for each surface, leading to an expectation that subsequent adsorption of H would scale with surface type similarly to single species adsorption. In contradiction to this expectation, there was no clearly discernable difference between the energies of coadsorbed H on Pt(1 1 1) and Ni(1 1 1) and only a slightly lowered energy on Pt₃Ni(1 1 1). This provides evidence that coadsorbed species in close proximity interact directly through itinerant mobile electrons and through electrostatic repulsion rather than solely through the electronic structure of the surface. The combination of the lowered d-band position (arising from distorted geometry) and direct co-adsorbate interactions on Pt₃Ni(1 1 1) leads to a lower energy barrier for H₂S formation on the surface compared to pure Pt(1 1 1). Thus, alloying Pt with Ni both decreases the likelihood of S adsorption and favors S removal through H₂S formation.     

Ordering of SiO<Subscript>x</Subscript>H<Subscript>y</Subscript>C<Subscript>z</Subscript> islands deposited by atmospheric pressure microwave plasma torch on Si(100) substrates patterned by nanoindentation

SiO _x H _y C _z nanometric layers are deposited from hexamethyldisiloxane by atmospheric pressure microwave plasma torch on Si(100) substrates submitted to temperatures varying on the range [0 °C; 120 °C]. Atomic force microscopy (AFM) characterizations of samples grown at intermediate substrate temperatures (~30 °C) demonstrate a layer-by-layer growth (Frank van der Merwe growth) leading to smooth flat and compact films while films deposited at lower and higher substrates temperatures show an island-like growth (Volmer-Weber growth) generating a high surface roughness. Concomitantly, a detailed infrared spectroscopy analysis of the growing films evidences structural modifications due to changes in the bond types, Si-O-Si conformation and stoichiometry correlated with scanning electron microscopy and AFM characterizations. Then, deposition conditions and specific microstructure are selected with the aim of generating 3-dimensional SiO _x H _y C _z nanostructure arrays on nanoindented Si (100) templates. The first results are discussed.     

Structural and magnetic properties of thin epitaxial Fe films on (1 1 0) GaAs prepared by metalorganic chemical vapor deposition

Iron films have been grown on (1 1 0) GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition at substrate temperatures (T_s) between 135°C and 400°C. X-ray diffraction (XRD) analysis showed that the Fe films grown at T_s between 200°C and 330°C were single crystals. Amorphous films were observed at T_s below 200°C and it was not possible to deposit films at T_s above 330°C. The full-width at half-maximum of the rocking curves showed that crystalline qualities were improved at T_s above 270°C. Single crystalline Fe films grown at different substrate temperature showed different structural behaviors in XRD measurements. Iron films grown at T_s between 200°C and 300°C showed bulk α-Fe like behavior regardless of film thickness (100–6400 Å). Meanwhile, Fe films grown at 330°C (144 and 300 Å) showed a biaxially compressed strain between substrate and epilayer, resulting in an expanded inter-planar spacing along the growth direction. Magnetization measurements showed that Fe films (>200 Å) grown at 280°C and 330°C were ferromagnetic with the in-plane easy axis along the [1 1 0] direction. For the thinner Fe films (⩽200 Å) regardless of growth temperature, square loops along the [1 0 0] easy axis were very weak and broad.     

Epitaxial alloyed films out of the bulk stability domain: Surface structure and composition of Ni3Al and NiAl films on a stepped Ni(1 1 1) surface

We have studied by Spot Profile Analysis Low Energy Electron Diffraction (SPA-LEED) and Auger Electron Spectroscopy (AES) Ni–Al alloyed layers formed by annealing, around 780 K, Al deposits on a stepped Ni(1 1 1) surface. The surface structure and composition of the thin epitaxial Ni₃Al and NiAl films, obtained respectively below and above a critical Al initial coverage θ_c, differ markedly from those of corresponding bulk alloys.The Ni₃Al ordered films form in a concentration range larger than the stability domain of the L1₂ Ni₃Al phase. The NiAl films present a marked distortion with respect to the lattice unit cell of the B2 NiAl phase, which slowly decreases when the film thickness increases.It also appears that the value of θ_c depends on the morphology of the Ni(1 1 1) substrate, increasing from θ_c = 4.5 ML for a flat surface to θ_c = 10 ML for a surface with a miscut of 0.4°. This could be directly related to the presence of steps, which favour Ni–Al interdiffusion.     

Oxygen assisted deposition of Sr2FeMoO6 thin films on SrTiO3(1 0 0)

Epitaxial thin films of Sr₂FeMoO₆ (SFMO) were prepared by pulsed laser deposition on SrTiO₃(1 0 0) substrate. Thin films have been grown under different gas environments and they were structurally characterised by XRD. In contrast to previous reports, deposition carried out in the presence of a small amount of O₂ with Ar yields high-quality SFMO films with a saturation magnetic moment of 3.8 μ_B. These SFMO films were strained in such a way that they were elongated along the c-axis and compressed in the ab-axes directions. The large low-field magnetoresistance seen in these films has been attributed to the tunneling across the antisite boundaries.     

Magnetic anisotropy of epitaxial Fe layers grown on Si(0 0 1)

The magnetic properties of epitaxial iron films up to 80 monolayers (ML) thickness grown on Si(0 0 1) by using a template technique were investigated by means of superconducting quantum interference device and magneto-optic Kerr effect techniques. The thinnest films investigated (∼3 ML) exhibit a composition close to Fe₃Si with a Curie temperature below room temperature (RT) and strong out-of-plane remanent magnetization that reflects the presence of a dominant second order surface anisotropy term. Thicker films (⩾4 ML) are ferromagnetic at RT with remanent magnetization in film-plane and a composition closer to pure Fe with typically 8–10% silicon content. When deposited at normal incidence such films show simple in-plane fourfold anisotropy without uniaxial contribution. The relevant fourth-order effective anisotropy constant K₄^eff was measured versus film thickness and found to change its sign near 18 ML. The origin of this remarkable behavior is investigated by means of a Néel model and mainly traced back to fourth-order surface anisotropy and magneto-elastic effects related to the large biaxial in-plane compressive strain up to 3.5% in the thinnest (⩽25 ML) films.     

Magnetic and magneto-optical properties of MnSb films on various substrates

Magnetic and magneto-optical properties of MnSb films with different crystalline orientations on various semiconductors of GaAs(1 0 0), GaAs(1 1 1)A, B, and sapphire(0 0 0 1) have been measured by a vibrating sample magnetometer (VSM) and a home-made magneto-optical Kerr effect (MOKE) system. All these samples have their easy axes in the plane and show ferromagnetic properties. Among these samples, the film on GaAs(1 1 1)B has the lowest coercive force H_c and the largest squareness (SQ) value, whereas the film on GaAs(1 0 0) shows the largest H_c and the lowest SQ value. A large Kerr rotation angle of about 0.3° was observed at a wavelength of λ=632.8 nm for the film on sapphire in the field applied both parallel and perpendicular to the film plane. However, the MnSn films on other substrates do not have an observable Kerr rotation. The dynamic effect of the hysteresis was also measured using our MOKE system. As the frequency of applied magnetic field increases, the loop rounds off at the corners and the loop area increases.     

Effect of thickness on the microstructure and soft magnetic properties of CoFeHfO thin films

The thickness effects on the microstructure and soft magnetic properties of CoFeHfO thin films have been investigated in the range of 100–600 nm. There was a significant change in the coercivity (H_c) and the anisotropy (H_k) value with increasing film thickness, but the saturation induction and the resistivity almost remain unchanged. H_c and H_k reached a minimum value of 0.19 Oe and a maximum value of 50 Oe, respectively at 200 nm film thickness. The high saturation magnetic induction is 21 kG and resistivity is 500 μΩ cm. The origin of the changing H_c and H_k values is discussed in detail based on change of microstructure along with film thickness.     

Magnetic behavior of amorphous Sm-Co alloy films

Amorphous films of Sm_100–x Co _x with 70x90 were made by vapor deposition on flat glass substrates kept at 300 K. The films crystallize above 700 K. The film plane is the easy plane with the planar anisotropy of the order of 10⁷ erg cm^–3, indicating a local anisotropy of the order 10⁸ erg cm^–3. With regard to local anisotropy and magnetization, the films appear to correspond to the random anisotropy concept of amorphous magnets. Films evaporated in a magnetic field parallel to the film plane have an induced uniaxial anisotropy of the order of 10⁶ erg cm^–3. Hysteresis loops in fields parallel to the easy axis are perfectly rectangular with coercive fieldsH _c in the range 30 Oe<H _c<3000 Oe, depending on composition, temperature and heat treatment. The magnetization reverses by a thermally activated domain nucleation and growth process having a narrow distribution of time constants. Aging at temperatures below the crystallization temperature reduces the anisotropies andH _c.     

Consolidation of hydrogenation–disproportionation–desorption–recombination processed Nd–Fe–B magnets by spark plasma sintering

We have successfully consolidated hydrogenation–disproportionation–desorption–recombination (HDDR) processed Nd–Fe–Co–Zr–B–Ga powder by spark plasma sintering (SPS). The field compacted samples were sintered at different temperatures (T_S) from 550 to 600 °C with compressive pressure of 80 MPa for 20 min. Microstructural investigations by transmission electron microscopy indicated that the sintered specimen exhibits Nd₂Fe₁₄B grains of ~300 nm with Nd-rich grain boundary phase. The optimum magnetic properties of B_r: 1.22 T, H_c: 928 kA/m, _BH_c: 600 kA/m, (BH)_max: 210 kJ/m³ were obtained in the sample sintered at 550 °C. The strategy for further improving the coercivity and remanence is discussed based on the microstructure-property relationships.     

Comparative dynamical study of the HD and isotopomers interacting with Pd(1 1 1) and Cu(1 1 0) surfaces

We study the dynamics of HD and H₂ molecules interacting with Pd(1 1 1) and Cu(1 1 0) using the classical trajectory method based on potential energy surfaces obtained from Density Functional Theory calculations. Our results predict a negligible isotopic effect on the dissociative adsorption probability on Pd(1 1 1) whereas on Cu(1 1 0), the adsorption probability for HD(ν_i=0) is slightly lower than for H₂(ν_i=0), mainly due to its lower initial vibrational zero point energy. The final rotational energy distribution of scattered HD and H₂ molecules are very similar. This shows that the asymmetric mass distribution of HD, barely affects the fraction of initial translational energy transferred to rotation during the scattering process. Our calculations point to the larger number of open rotational excitation channels for HD, as the main cause of rotational excitation probabilities larger than for H₂. The theoretical apparent rotational temperature, T_rot, of HD molecules scattered from Pd(1 1 1) at impact energy , is in good agreement with the experimental value. In contrast, for Cu(1 1 0) the theoretical T_rot is much lower than the value measured for Cu(1 0 0). Possible reasons for such a discrepancy between theory and experiments are discussed.     

FMR Studies of Ultra-Thin Epitaxial Pd<Subscript>0.92</Subscript>Fe<Subscript>0.08</Subscript> Film

Magnetic anisotropies of 20 nm epitaxial film of palladium–iron alloy Pd_0.92Fe_0.08 grown on the (001) MgO substrate were studied. Ferromagnetic resonance (FMR) spectroscopy and vibrating sample magnetometry (VSM) were exploited to determine magnetic parameters of the film. It was found that the synthesized film reveals cubic anisotropy with tetragonal distortion. The simulated magnetic hysteresis loops, obtained utilizing the magnetic anisotropy constants taken from the FMR spectra analysis, agree well with those measured by VSM.     

In-plane uniaxial magnetic anisotropy of thin Fe layers on Si(1 1 1) induced upon grazing deposition of a Si capping layer

We demonstrate that an in-plane uniaxial magnetic anisotropy can be induced in Fe films grown on Si(1 1 1) by means of an appropriate Si capping layer. It is shown that grazing-incidence Si deposition reduces the three-fold symmetry of the body-centered-cubic (BCC) Fe(1 1 1) surface to two-fold, thus generating a surface-type uniaxial in-plane magnetic anisotropy contribution. The relevant magnetic easy axis direction depends in a critical way on the azimuth of the Si evaporation flux with respect to the Fe crystal surface directions. A simple qualitative model based on the change of the Fe surface by inhomogeneous chemical reaction with Si is proposed to interpret the magnetic anisotropy evolution.