Chemical effects in C60 irradiation of polymers

The C₆₀ erosion behaviour of poly(methyl)methacrylate (PMMA), poly(α-methyl)styrene (PAMS) and polystyrene (PS) has been studied at various temperatures and compared with that under Ga⁺ irradiation. Strong variations of erosion yields are observed, indicating that chemical degradation mechanisms are operating. In particular, our results suggest that fast depolymerization mechanisms are important in leaving the surface of the sputter crater virtually undamaged. Since such mechanisms are connected with the chemical nature of the polymer, the possibility of performing molecular depth profiling of polymers with C₆₀ appears to depend strongly on the chemical nature of the system under study.     

Molecular depth profiling of trehalose using a C60 cluster ion beam

Molecular depth profiling of organic overlayers was performed using a mass selected fullerene ion beam in conjunction with time-of-flight (TOF-SIMS) mass spectrometry. The characteristics of depth profiles acquired on a 300-nm trehalose film on Si were studied as a function of the impact kinetic energy and charge state of the C₆₀ projectile ions. We find that the achieved depth resolution depends only weakly upon energy.     

Depth profiling of taxol-loaded poly(styrene-b-isobutylene-b-styrene) using Ga and C60 ion beams

The surface of a triblock copolymer, containing a solid-phase drug, was investigated using 15 keV Ga⁺ and 20 keV C₆₀⁺ ion beams. Overall, the results illustrate the successful use of a cluster ion beam for greatly enhancing the molecular ion and high-mass fragment ion intensities from the surface and bulk of the polymer system. The use of C₆₀⁺ also established the ability to see through common overlayers like poly(dimethyl siloxane) which was not possible using atomic ion sources. Moreover, the use of C₆₀⁺ allowed depth profiles to be obtained using primary ion dose densities in excess of 6 × 10¹⁴ C₆₀⁺/cm². Resulting sputter craters possess relatively flat bottoms without the need for sample rotation and reached depths of ca. 2 μm. AFM results illustrate the more gentile removal of surface species using cluster ions. Specifically, phase contrast and topographic images suggest the relatively high ion doses do not significantly alter the phase distribution or surface topography of the polymer. However, a slight increase in rms roughness was noticed.     

Sputtering of thin benzene and polystyrene overlayers by keV Ga and C60 bombardment

The mechanisms of ion-stimulated desorption of thin organic overlayers deposited on metal substrates by mono- and polyatomic projectiles are examined using molecular dynamics (MD) computer simulations. A monolayer of polystyrene tetramers (PS4) physisorbed on Ag{1 1 1} is irradiated by 15 keV Ga and C₆₀ projectiles at normal incidence. The results are compared with the data obtained for a benzene overlayer to investigate the differences in sputtering mechanisms of weakly and strongly bound organic molecules. The results indicate that the sputtering yield decreases with the increase of the binding energy and the average kinetic energy of parent molecules is shifted toward higher kinetic energy. Although the total sputtering yield of organic material is larger for 15 keV C₆₀, the impact of this projectile leads to a significant fragmentation of ejected species. As a result, the yield of the intact molecules is comparable for C₆₀ and Ga projectiles. Our data indicate that chemical analysis of the very thin organic films performed by detection of sputtered neutrals will not benefit from the use of C₆₀ projectiles.     

Controlling energy deposition during the C60 bombardment of silicon: The effect of incident angle geometry

The profile of the energy deposition footprint is controlled during the C₆₀⁺ erosion of Si surfaces by varying the incident energy and/or incident angle geometry. Sputter yield, surface topography, and chemical composition of the eroded surfaces were characterized using atomic force microscopy (AFM) and secondary ion mass spectrometry (SIMS). The experiments show that the 10 keV, 40° incident C₆₀⁺ erosion of Si results in the formation of a C containing, mound-like structure on the solid surface. We find that the occurrence of this C feature can be avoided by increasing the incident energy of the C₆₀⁺ projectile or by increasing the incident angle of the C₆₀⁺ projectile. While both strategies allow for the Si samples to be eroded, the occurrence of topographical roughening limits the usefulness of C₆₀⁺ in ultra-high resolution semiconductor depth profiling. Moreover, we find that the relative effect of changing the incident angle geometry of the C₆₀⁺ projectile on the profile of the energy deposition footprint, and thus the sputter yield, changes according to the kinetic energy of the projectile and the material of the bombarded surface, a behavior that is quite different than what is observed for an atomic counterpart.     

Quantitative depth profiling of an alternating Pt/Co multilayer and a Pt-Co alloy multilayer by SIMS using a Buckminsterfullerene (C60) source

A Buckminsterfullerene ion beam has been applied to the depth profiling of an alternating pure Pt and pure Co multilayer. Quantitative depth profiling was performed by secondary ion mass spectrometry (SIMS) with C₆₀ ions using Pt-Co alloy films with different compositions. Relative sensitivity factors (RSFs) derived from a Pt₃₉Co₆₁ alloy film were used to convert an original depth profile to a composition depth profile. A severe interface artifact observed in the depth profile of a Pt/Co multilayer was quantitatively correlated with a gradual variation of matrix composition through the Pt/Co and Co/Pt interfaces by comparison with the depth profiling of an alloy multilayer film. Moreover, the interface artifact could be compensated by conversion of the profile to a composition profile using the same RSFs. The depth resolutions of a Pt/Co multilayer derived from the composition depth profile were much larger than the apparent interface widths measured from the original depth profile due to the nonlinear relationship between the Co and Pt ion intensities and their compositions.     

Depth profiling of cells and tissues by using C60 and SF5 as sputter ions

In the present study, SF₅⁺ and C₆₀⁺ were used as primary ions for sputtering and Bi₃⁺ was used as primary ions for analysis. The depth profiling procedure was utilized to make 3D images of the chemistry of single cultured cells and tissue samples of intact intestinal epithelium.The results show sputtering of organic material from cells and tissue with both SF₅⁺ and C₆₀⁺ sources. Cholesterol fragments were found in the superficial layers when sputtering with C₆₀⁺. Spectra were collected revealing the change in yield along the z-axis of the sample. 3D images of the localization of Na, K, phosphocholine and cholesterol were constructed with both ion sources for single cell cultures and the mouse intestine.Cryostate sections of mouse intestine were analysed in 2D and the results were compared with the 3D image of the intestine. The localization of cholesterol and phosphocholine was found to be similar in cryostate sections analysed in two dimensions and the sputtered, freeze-dried intestine analysed in 3D. The comparison of 2D and 3D images suggest that the phosphocholine signal faded with C₆₀⁺ sputtering. In conclusion, both C₆₀⁺ and SF₅⁺ can be used as primary ion sources for sputtering of organic material from cells and tissues. Consecutive analysis with a Bi₃⁺ source can be used to obtain image stacks that could be used for reconstruction of 3D images.     

The effect of C60 cluster ion beam bombardment in sputter depth profiling of organic-inorganic hybrid multiple thin films

The effects of C₆₀ cluster ion beam bombardment in sputter depth profiling of inorganic-organic hybrid multiple nm thin films were studied. The dependence of SIMS depth profiles on sputter ion species such as 500 eV Cs⁺, 10 keV C₆₀⁺, 20 keV C₆₀²⁺ and 30 keV C₆₀³⁺ was investigated to study the effect of cluster ion bombardment on depth resolution, sputtering yield, damage accumulation, and sampling depth.     

Sputtering yields of PMMA films bombarded by keV C60 ions

A quartz crystal microbalance (QCM) has been used to determine total-mass sputtering yields of PMMA films by 1-16 keV C₆₀^+,2+ ion beams. Quantitative sputtering yields for PMMA are presented as mass loss per incident ion Y_m. Mass-lost rate QCM data show that a 13 keV C₆₀ cluster leads to emission equivalent to 800 PMMA molecules per ion. The power law obtained for the increase in sputtering yield with primary ion energy is in good agreement those predicted by “thermal spike” regime and MD models, when crater sizes are used to estimate sputtering.     

A comparative study of secondary ion yield from model biological membranes using Aun and C60 primary ion sources

Au_n⁺ and C₆₀⁺ primary ion sources have been used to acquire spectra from phospholipids, symmetric liposomes and asymmetric liposomes. We demonstrate that when using different ion beams different chemical information can be obtained. Symmetric and asymmetric liposomes, with 95% asymmetry, were produced and analysed with Au⁺, Au₃⁺ and C₆₀⁺ primary ion beams. C₆₀⁺ gave the greatest yield from the symmetric liposome but after correcting for the yield effects on the data obtained from the asymmetric liposome it has been shown that C₆₀⁺ is the most surface sensitive, providing the least information from the inner leaflet of the liposome. Au_n⁺ provides the greatest amount of information from the inner leaflet. The results present the possibility of designing ToF-SIMS experiments that selectively probe specific regions of a (bio)molecular surface.     

A modified electron bombardment type ion source for the study of solids

A modified electron bombardment type ion source suitable for use with mass spectrometer is described. Ion formation occurs throughout a relatively large volume in the ionisation box, since no magnetic field is used to collimate the ionising electrons. A sensitivity of 2 × 10⁻⁵ amp/torr is obtained for an ion extraction energy of 2 keV and 200 mass resolution. Trajectory tracing has been used to study the operation of the ion source. Capability of the ion source to analyse solid samples in microgram quantity was tested by studying evaporation of BaO from tungsten.     

Quantitative study of oxygen enhancement of sputtered ion yields. I. Argon ion bombardment of a silicon surface with O2 flood

A novel quantification approach is applied to determine in situ the amount of surface oxygen within the sputtered particle escape depth during steady-state sputter depth profiling of silicon under simultaneous oxygenation with an oxygen flood gas or with an oxygen primary ion beam. Quantification is achieved by comparing the secondary ion intensities of ¹⁶O that is adsorbed or implanted at the Si surface with the measured peak intensities of a calibrated ¹⁸O ion implant used as a reference standard. Sputtered ion yields can thereby be related to surface oxygen levels. In the present work the dependences of the partial silicon sputter yield Y and of the positive and negative secondary ion useful yields UY(X^±) (X = B, O, Al, Si, P) on the oxygen/silicon ratio, O/Si, in the sputtered flux are studied for ⁴⁰Ar⁺ bombardment of Si with simultaneous O₂ flooding. The silicon sputter yield is found to decrease with increasing flood pressure and O/Si ratio by up to a factor of 3. Both positive and negative secondary ion yields are enhanced by the presence of oxygen at the silicon surface. The useful ion yield of Si⁺ scales non-linearly with the atom fraction of surface oxygen; this behavior is shown to invalidate models that suggest that Si⁺ ion yield enhancement is dominated either by isolated oxygen atoms or by formation of SiO₂ precipitates. In contrast a microscopic statistical model that assumes that local Si⁺ ion formation depends only on the number of oxygen atoms coordinated to the Si atom to be ejected fits the ion yield data quantitatively.     

Improvement of depth resolution in XPS analysis of fluorinated layer using C60 ion sputtering

Depth profile of C₆₀ ion-used X-ray photoelectron spectroscopy (XPS) was studied on fluorinated organic layers with different thicknesses. We found that the depth resolution decreased, the sputtering rate went down and the surface turned rough as the layer thickness increased. This is because carbon-rich layer was formed on the surface by cross-linking reaction of the polymer and/or accumulation of degraded C₆₀ through continuous sputtering. Surprisingly, the high sputtering rate drastically improved the resolution of the analysis. The rate over 48.7 nm/min did not show any deterioration on the depth resolution, the sputtering rate and surface smoothness.     

Structural effects of C60 bombardment on various natural mineral samples—Application to analysis of organic phases in geological samples

Organic phases trapped inside natural mineral samples are of considerable interest in astrobiology, geochemistry and geobiology. Examples of such organic phases are microfossils, kerogen and oil. Information about these phases is usually retrieved through bulk crushing of the rock which means both a risk of contamination and that the composition and spatial distribution of the organics to its host mineral is lost. An attractive of way to retrieve information about the organics in the rock is depth profiling using a focused ion beam. Recently, it was shown that it is possible to obtain detailed mass spectrometric information from oil-bearing fluid inclusions, i.e. small amounts of oil trapped inside a mineral matrix, using ToF-SIMS. Using a 10 keV C₆₀⁺ sputter beam and a 25 keV Bi₃⁺ analysis beam, oil-bearing inclusions in different minerals were opened and analysed individually. However, sputtering with a C₆₀⁺ beam also induced other changes to the mineral surface, such as formation of topographic features and carbon deposition. In this paper, the cause of these changes is explored and the consequences of the sputter-induced features on the analysis of organic phases in natural mineral samples (quartz, calcite and fluorite) in general and fluid inclusions in particular are discussed.The dominating topographical features that were observed when a several micrometers deep crater is sputtered with 10 keV C₆₀⁺ ions on a natural mineral surface are conical-shaped and ridge-like structures that may rise several micrometers, pointing in the direction of the incident C₆₀⁺ ion beam, on an otherwise flat crater bottom. The sputter-induced structures were found to appear at places with different chemistry than the host mineral, including other minerals phases and fluid inclusions, while structural defects in the host material, such as polishing marks or scratches, did not necessarily result in sputter-induced structures. The ridge-like structures were often covered by a thick layer of deposited carbon.Despite the appearance of the sputter-induced structures and carbon deposition, most oil-bearing inclusions could successfully be opened and analysed. However, smaller inclusion (<15 μm) could potentially become entirely covered by sputter-resistant structures and therefore difficult to open. Therefore, it might become necessary, to for example increase the ion energy and rotate the stage to successfully open smaller inclusions for analysis.SIMS, C₆₀, carbon deposition, topography, mineral, fluid inclusions, geological samples, depth profiling.     

Structural properties of C60 in solution

In this paper SANS results on C₆₀ solutions are presented. The data analysis allows to determine the value of the gyration radius of C₆₀ dissolved in CS₂, a solvent capable to guarantee a good contrast for the neutron probe. The study indicates that the gyration radius R_g is independent of concentration.     

The effect of incident angle on the C60 bombardment of molecular solids

The effect of incident angle on the quality of SIMS molecular depth profiling using C₆₀⁺ was investigated. Cholesterol films of ∼300 nm thickness on Si were employed as a model and were eroded using 40 keV C₆₀⁺ at an incident angle of 40° and 73° with respect to the surface normal. The erosion process was characterized by determining at each angle the relative amount of chemical damage, the total sputtering yield of cholesterol molecules, and the interface width between the film and the Si substrate. The results show that there is less molecule damage at an angle of incidence of 73° and that the total sputtering yield is largest at an angle of incidence of 40°. The measurements suggest reduced damage is not necessarily dependent upon enhanced yields and that depositing the incident energy nearer the surface by using glancing angles is most important. The interface width parameter supports this idea by indicating that at the 73° incident angle, C₆₀⁺ produces a smaller altered layer depth. Overall, the results show that 73° incidence is the better angle for molecular depth profiling using 40 keV C₆₀⁺.     

Sputtering of amorphous ice induced by C60 and Au3 clusters

Molecular dynamics simulations were performed to study the behavior of cluster SIMS. Two predominant cluster ion beam sources, C₆₀ and Au₃, were chosen for comparison. An amorphous water ice substrate was bombarded with incident energy of 5 keV. The C₆₀ cluster was observed to shatter upon impact creating a crater of damage approximately 8 nm deep. Although Au₃ was also found to both break apart and form a damage crater, it continued along its initial trajectory causing damage roughly 10 nm deep into the sample and becoming completely imbedded. It is suggested that this difference in behavior is due to the large mass of Au relative to the substrate water molecule.     

Junction characteristics of C60/polycarbonate blend on Si substrate

We report a study of the interface between fullerene (C₆₀) doped polycarbonate (PC) blends and n-type Si substrate. C₆₀ is usually an electron acceptor in interpenetrated networks and an electron transport in photovoltaic cells. We have studied that the guest-host approach to prepare C₆₀ doped polycarbonate blend. In this article, we report the I-V characteristics of C₆₀ doped polycarbonate/n-type Si junction and the annealing effect on these characteristics. In this junction, a nanocomposite of organic semiconductor fullerene (C₆₀), used as the active medium, with an inert polycarbonate matrix was spin coated on n-type Si substrate. We found that the C₆₀ shows the junction characteristics with n-type Si substrate. The knee voltage and dynamic resistance varies with concentration of C₆₀ as well as temperature. Ellipsometry studies showed the annealing effect on the refractive index and thickness of C₆₀ doped polycarbonate blend on n-type Si substrate. The optical micrographs show that fullerene (C₆₀) is spherical molecule and it is blend in the form of crystallites having size of micron order.     

C60 ion sputtering of layered organic materials

Two different organic materials, Irganox1010 and Irganox3114, were vacuum deposited as alternating layers. The layers of Irganox3114 were thin (∼2.5 nm) in comparison to the Irganox1010 (∼55 or ∼90 nm); we call these ‘organic delta layers’. Both materials are shown to have identical sputtering yields and the alternating layers may be used to determine some of the important metrological parameters for cluster ion beam depth profiling of organic materials. The sputtering yield for C₆₀ ions is shown to diminish with ion dose. Comparison with atomic force microscopy data from films of pure Irganox1010, demonstrates that the depth resolution is limited by the development of topography. Secondary ion intensities are a well-behaved function of sputtering yield and may be employed to obtain useful analytical information. Organic delta layers are shown to be valuable reference materials for comparing the capabilities of different cluster ion sources and experimental arrangements for the depth profiling of organic materials.     

Modulation of the work function of fullerenes C60 and C70 by alkali-metal adsorption: A theoretical study

The impact of alkali-metal (Li/Na/Cs) adsorption on work function of fullerenes C₆₀ and C₇₀ was investigated by first-principles calculations. After adsorption, the work functions of fullerenes C₆₀ and C₇₀ decrease distinctly and vary linearly with the electronegativity of the alkali metal elements, and the positions where the alkali atoms are adsorbed considerably influence the work functions. On the contrary, a vacancy defect elevates the work functions of the fullerenes C₆₀ and C₇₀. The variation in the work functions rests with variation in Fermi level (which are attributed to charge transfer) and variation in vacuum levels (which are attributed to the induced dipole moments). Moreover, alkali-metal adsorption can also improve the electric conductivity of a fullerene mixture of C₆₀ and C₇₀.