C60 ion sputtering of layered organic materials

Two different organic materials, Irganox1010 and Irganox3114, were vacuum deposited as alternating layers. The layers of Irganox3114 were thin (∼2.5 nm) in comparison to the Irganox1010 (∼55 or ∼90 nm); we call these ‘organic delta layers’. Both materials are shown to have identical sputtering yields and the alternating layers may be used to determine some of the important metrological parameters for cluster ion beam depth profiling of organic materials. The sputtering yield for C₆₀ ions is shown to diminish with ion dose. Comparison with atomic force microscopy data from films of pure Irganox1010, demonstrates that the depth resolution is limited by the development of topography. Secondary ion intensities are a well-behaved function of sputtering yield and may be employed to obtain useful analytical information. Organic delta layers are shown to be valuable reference materials for comparing the capabilities of different cluster ion sources and experimental arrangements for the depth profiling of organic materials.     

Molecular depth profiling of multi-layer systems with cluster ion sources

Cluster bombardment of molecular films has created new opportunities for SIMS research. To more quantitatively examine the interaction of cluster beams with organic materials, we have developed a reproducible platform consisting of a well-defined sugar film (trehalose) doped with peptides. Molecular depth profiles have been acquired with these systems using C₆₀⁺ bombardment. In this study, we utilize this platform to determine the feasibility of examining buried interfaces for multi-layer systems. Using C₆₀⁺ at 20 keV, several systems have been tested including Al/trehalose/Si, Al/trehalose/Al/Si, Ag/trehalose/Si and ice/trehalose/Si. The results show that there can be interactions between the layers during the bombardment process that prevent a simple interpretation of the depth profile. We find so far that the best results are obtained when the mass of the overlayer atoms is less than or nearly equal to the mass of the atoms in buried molecules. In general, these observations suggest that C₆₀⁺ bombardment can be successfully applied to interface characterization of multi-layer systems if the systems are carefully chosen.     

Chemical effects in C60 irradiation of polymers

The C₆₀ erosion behaviour of poly(methyl)methacrylate (PMMA), poly(α-methyl)styrene (PAMS) and polystyrene (PS) has been studied at various temperatures and compared with that under Ga⁺ irradiation. Strong variations of erosion yields are observed, indicating that chemical degradation mechanisms are operating. In particular, our results suggest that fast depolymerization mechanisms are important in leaving the surface of the sputter crater virtually undamaged. Since such mechanisms are connected with the chemical nature of the polymer, the possibility of performing molecular depth profiling of polymers with C₆₀ appears to depend strongly on the chemical nature of the system under study.     

Molecular secondary ion formation under cluster bombardment: A fundamental review

A brief review is given regarding the application of cluster ion beams as desorption probes in molecular SIMS. The general observation is that the efficiency of secondary ion formation, particularly that of complex molecular species, is significantly enhanced if polyatomic projectiles are employed instead of atomic species. Apart from the sensitivity increase, cluster bombardment also appears to allow for molecular depth profiling studies without the accompanying damage accumulation normally associated with atomic projectiles. A few fundamental aspects are addressed in an attempt to highlight the physics behind these observations. It appears that much of the benefit associated with cluster bombardment is connected to the fact that these projectiles give access to very high sputter yields which are not accessible with atomic primary ions.     

ToF-SIMS analysis of a fluorocarbon-grafted PET with a gold cluster ion source

Cluster ions have been recognized as a superb primary species in time of flight secondary ion mass spectroscopy (ToF-SIMS) compared with monatomic primary ions, as they significantly enhance the secondary ion yields from bulk samples. Self-assembled monolayers provide an important system for studying the fundamental mechanism involved in the yield enhancement.We used a gold cluster ion source to analyze a new type of self-assembled monolayer: a fluorocarbon-grafted polyethylene terephthalate. In addition to the structure details, which helped to understand the grafting mechanism, ToF-SIMS analysis revealed that fluorocarbon secondary ion yield enhancements by cluster ions were due to the enhanced sputter efficiency. A larger information depth may also be expected from the enhancement. Both mathematical definitions of damage cross-section and disappearance cross-section were revisited under a new context. Another cross-section parameter, sputter cross-section, was introduced to differentiate the beam induced sputter process from damage process.     

ToF-SIMS cluster ion imaging of hippocampal CA1 pyramidal rat neurons

Recent studies have demonstrated the power of time-of-flight secondary ion mass spectrometry (ToF-SIMS) cluster ion imaging to characterize biological structures, such as that of the rat central nervous system. A large number of the studies to date have been carried out on the “structural scale” imaging several mm² using mounted thin sections. In this work, we present our ToF-SIMS cluster ion imaging results on hippocampal rat brain neurons, at the cellular and sub-cellular levels. As a part of an ongoing investigation to examine gut linked metabolic factors in autism spectrum disorders using a novel rat model, we have observed a possible variation in hippocampal Cornu ammonis 1 (CA1) pyramidal neuron geometry in thin, paraformaldehyde fixed brain sections. However, the fixation process alters the tissue matrix such that much biochemical information appears to be lost. In an effort to preserve as much as possible this original information, we have established a protocol using unfixed thin brain sections, along with low dose, 500 eV Cs⁺ pre-sputtering that allows imaging down to the sub-cellular scale with minimal sample preparation.     

The effect of C60 cluster ion beam bombardment in sputter depth profiling of organic-inorganic hybrid multiple thin films

The effects of C₆₀ cluster ion beam bombardment in sputter depth profiling of inorganic-organic hybrid multiple nm thin films were studied. The dependence of SIMS depth profiles on sputter ion species such as 500 eV Cs⁺, 10 keV C₆₀⁺, 20 keV C₆₀²⁺ and 30 keV C₆₀³⁺ was investigated to study the effect of cluster ion bombardment on depth resolution, sputtering yield, damage accumulation, and sampling depth.     

Fundamental studies of the cluster ion bombardment of water ice

The fundamental sputtering properties of water ice are of interest for molecular depth profiling of biological samples in their native environment. We report on a method of studying amorphous water ice films of precise thicknesses in which pure water vapor is condensed onto a pre-cooled, silver-coated quartz crystal microbalance (QCM). This scheme allows for the determination of water ice sputter yields for any primary projectile as well as providing a means for studying escape depths of atoms and molecules beneath the deposited water ice layer. Specifically, we find a removal of approximately 2500 water molecule equivalents/20 keV C₆₀⁺ projectile with an underlying silver ion escape depth of 7.0 Å.     

Secondary ion emission from Si bombarded with large Ar cluster ions under UHV conditions

Si was bombarded with size-selected 40 keV Ar cluster ions and positive secondary ions were measured using the time-of-flight technique under high and ultra-high vacuum (HV and UHV respectively) conditions. Si⁺ ions were main species detected under the incidence of 40 keV Ar cluster ions, and the yields of Si cluster ions such as Si₄⁺ were also extremely high under both conditions. On the other hand, oxidized secondary ions such as SiO⁺ were detected with high intensity only under the HV condition. The yield ratios of oxidized ions decreased in UHV to less than 1% of their values in HV. The effect of residual gas pressure on Si cluster ion yields is relatively low compared to oxidized ions, and the UHV condition is required to obtain accurate secondary ion yields.     

Molecular depth profiling of trehalose using a C60 cluster ion beam

Molecular depth profiling of organic overlayers was performed using a mass selected fullerene ion beam in conjunction with time-of-flight (TOF-SIMS) mass spectrometry. The characteristics of depth profiles acquired on a 300-nm trehalose film on Si were studied as a function of the impact kinetic energy and charge state of the C₆₀ projectile ions. We find that the achieved depth resolution depends only weakly upon energy.     

Molecular depth profiling and imaging using cluster ion beams with femtosecond laser postionization

The emergence of cluster ion sources as viable SIMS probes has opened new possibilities for detection of neutral molecules by laser postionization. Previous studies have shown that with atomic bombardment multiphoton ionization using high-power femtosecond pulses leads to photofragmentation. The large amount of photofragmentation can be mostly attributed to high amounts of internal energy imparted to the sputtered molecules during the desorption process. Several pieces of preliminary data suggest that molecules subjected to cluster beam bombardment are desorbed with lower internal energies than those subjected to atomic beam bombardment. Lower energy molecules may then be less likely to photodissociate creating less photofragments in the laser postionization spectra. Here we present data taken from coronene films prepared by physical vapor deposition comparing a 40 keV ion source with a 20 keV Au⁺ ion source, which supports this hypothesis. Furthermore, the depth profiling capabilities of cluster beams may be combined with laser postionization to obtain molecular depth profiles by monitoring the neutral flux. In addition, imaging and depth profiling may be combined with atomic force microscopy (AFM) to provide three-dimensional molecular images.     

Depth profiling of taxol-loaded poly(styrene-b-isobutylene-b-styrene) using Ga and C60 ion beams

The surface of a triblock copolymer, containing a solid-phase drug, was investigated using 15 keV Ga⁺ and 20 keV C₆₀⁺ ion beams. Overall, the results illustrate the successful use of a cluster ion beam for greatly enhancing the molecular ion and high-mass fragment ion intensities from the surface and bulk of the polymer system. The use of C₆₀⁺ also established the ability to see through common overlayers like poly(dimethyl siloxane) which was not possible using atomic ion sources. Moreover, the use of C₆₀⁺ allowed depth profiles to be obtained using primary ion dose densities in excess of 6 × 10¹⁴ C₆₀⁺/cm². Resulting sputter craters possess relatively flat bottoms without the need for sample rotation and reached depths of ca. 2 μm. AFM results illustrate the more gentile removal of surface species using cluster ions. Specifically, phase contrast and topographic images suggest the relatively high ion doses do not significantly alter the phase distribution or surface topography of the polymer. However, a slight increase in rms roughness was noticed.     

Characterization of drug-eluting stent (DES) materials with cluster secondary ion mass spectrometry (SIMS)

Secondary ion mass spectrometry (SIMS) employing an SF₅⁺ polyatomic primary ion source was utilized to analyze several materials commonly used in drug-eluting stents (DES). Poly(ethylene-co-vinyl acetate) (PEVA), poly(lactic-co-glycolic acid) (PLGA) and various poly(urethanes) were successfully depth profiled using SF₅⁺ bombardment. The resultant molecular depth profiles obtained from these polymeric films showed very little degradation in molecular signal as a function of increasing SF₅⁺ primary ion dose when experiments were performed at low temperatures (signal was maintained for doses up to ∼5 × 10¹⁵ ions/cm²). Temperature was determined to be an important parameter in both the success of the depth profiles and the mass spectral analysis of the polymers. In addition to the pristine polymer films, paclitaxel (drug released in Taxus™ stent) containing PLGA films were also characterized, where it was confirmed that both drug and polymer signals could be monitored as a function of depth at lower paclitaxel concentrations (10 wt%).     

叠片法测量“闪光二号”加速器的高功率离子束能谱

给出了利用叠片法测量“闪光二号”加速器高功率离子束能谱的基本原理及初步实验结果. 采用Ziegler的拟合公式编制程序计算了不同能量质子和碳离子穿过不同厚度Mylar膜后的能 量损失情况.在偏压法拉第筒阵列各个法拉第筒的准直孔前分别覆盖0—6μm厚的Mylar膜， 根据不同膜厚对应的信号衰减情况(叠片法)，得到了高功率离子束的离子能谱，离子的最高 能量>440keV，平均能量约为270keV，能量为200—300keV之间的离子数目最多，碳离子数和 90keV以下的质子所占总离子数的组分不多于32％.所测量离子能谱和离子数目随时间的分布 关系与二极管的电压和电流符合也较好.还将叠片法的测量结果与利用磁谱仪和采用飞行时 间法等的测量结果进行了比较，三种方法所得的测量结果基本一致. 关键词： 高功率离子束 离子能谱 法拉第筒 叠片法 能量损失     

Cluster size dependence of SiO2 thin film formation by O2 gas cluster ion beams

Cluster size effects of SiO₂ thin film formation with size-selected O₂ gas cluster ion beams (GCIBs) irradiation on Si surface were studied. The cluster size varied between 500 and 20,000 molecules/cluster. With acceleration voltage of 5 kV, the SiO₂ thickness was close to the native oxide thickness by irradiation of (O₂)_20,000 (0.25 eV/molecule), or (O₂)_10,000 (0.5 eV/molecule). However, it increased suddenly above 1 eV/molecule (5000 molecules/cluster), and increased monotonically up to 10 eV/molecule (500 molecules/cluster). The SiO₂ thickness with 1 and 10 eV/molecule O₂-GCIB were 2.1 and 5.0 nm, respectively. When the acceleration voltage was 30 kV, the SiO₂ thickness has a peak around 10 eV/molecule (3000 molecules/cluster), and it decreased gradually with increasing the energy/molecule. At high energy/molecule, physical sputtering effect became more dominant process than oxide formation. These results suggest that SiO₂ thin film formation can be controlled by energy per molecule.     

低能离子注入植物种子的深度分布及生物效应机理研究

采用四种物理测量方法：扫描电子显微镜和能量色散x射线分析，质子激发x荧光分析，双光子激光扫描显微技术和正电子湮没技术测定了能量为200keV V⁺ 注入干花生种 子的深度分布.测量结果表明，注入的低能离子在干种子花生内的深度远比TRIM95的理论计算值为高.对低能离子注入植物种子后的生物效应的机理进行了讨论. 关键词： 低能离子注入 植物种子 深度分布 生物效应机理