Effect of cobalt doping and annealing on properties of titania thin films prepared by sol-gel process

Undoped and cobalt doped titania (TiO₂) thin films have been prepared on Si(1 0 0) monocrystal and quartz substrate using the sol-gel deposition method and annealed in air at 450, 550, 650, 750, 850, 950 and 1050 °C. Several experimental techniques (AFM, XRD, Raman spectroscopy, XRR, EDX, XPS, XAS, UV-VIS spectroscopy) have been used to characterize these films. Further more the degree of light induced hydrophilicity was estimated by measuring the contact angle of a water droplet on the film. Increase of the annealing temperature and in smaller degree also cobalt doping predispose titania crystallite growth. The rutile phase was detected at lower temperatures in the cobalt doped films than in the undoped titania films. Cobalt in the cobalt doped TiO₂ was seen to be in Co²⁺ oxidation state, mainly in CoTiO₃ phase when films were annealed at temperatures higher than 650 °C. Cobalt compounds segregated into the sub-surface region and to the surface of the titania, where they formed islands. Cobalt doping red-shifted the fundamental absorption edge further into the visible range, however it did not enhance the light induced hydrophilicity of the thin film surface as compared to the undoped titania thin films.     

Superhydrophobic and transparent ZnO thin films synthesized by spray pyrolysis technique

Superhydrophobic and transparent zinc oxide (ZnO) thin films were deposited by a simple and cost effective spray pyrolysis technique (SPT) onto the glass substrates at 723 K from an aqueous zinc acetate precursor solution. The solution concentration was varied from 0.1 to 0.4 M and its effect on structural, morphological, wetting and optical properties of ZnO thin films was studied. The synthesized films were found to be polycrystalline, with preferential growth along c-axis. A slight improvement in the crystallite size and texture coefficient is observed as the concentration of the solution is increased. SEM micrographs show the uniform distribution of spherical grains of about 60-80 nm grain size. The films were specular and highly transparent with average transmittance of about 85%. The spectrum shows sharp absorption band edge at 381 nm, corresponding to optical gap of 3.25 eV. The samples of texture coefficient less than 90% and roughness less than 75 nm are hydrophobic and above these values they become superhydrophobic in nature. The hydrophobicity coupled with high transmittance is of great importance in commercial application such as transparent self-cleaning surfaces, anti-fog, anti-snow, fluid microchips and microreactors.     

Micro-structuring of TiO2 thin films by laser-assisted diffraction processing

Thin films of TiO₂ are deposited by magnetron sputtering on glass substrate and are irradiated by UV radiation using a KrF excimer laser (248 nm). These thin films are patterned with a razor blade placed on the way of the radiation just in front of the TiO₂ thin film. Just near the edge of the razor blade on the thin film, diffraction lines are observed, resulting in the ablation of the film. These patterns are characterized by optical microscopy, mechanical profilometry. Diffraction up to the 35th order is observed. The results are shown to be compatible with a model in which electronic excitation plays the major role.     

Hydrogen doping of MgO thin films prepared by pulsed laser deposition

Hydrogen doped MgO films were grown by pulsed laser deposition method. Gaseous hydrogen stored in cavities of milky MgO single crystal targets provided doping in film deposition process. Clear MgO targets without hydrogen were used in the preparation of reference films. The influence of hydrogen doping on firing voltage (FV) of gas discharge and its AC frequency dependence was investigated. According to thermoluminescence experiments, the films grown from milky targets contained two kinds of electron traps with the activation energies of 0.051 and 0.31 eV, while latter traps were absent in reference samples. The 0.31 eV trap was assigned to the hydride ion H⁻ occupying an oxygen vacancy site in MgO crystal structure. Using standard gas mixture (Ne-10% Xe), FVs of hydrogen doped sample showed considerable frequency dependence and were up to 55 V lower in comparison to the reference sample. The FVs of reference sample were shifted 14-28 V to higher values when N₂ gas was added to the mixture. The N₂ addition lowered the FVs of hydrogen doped sample up to 38 V and almost eliminated the FV frequency dependence.     

Effect of magnesium addition on the wetting of alumina by aluminium

In this report the wetting behaviour between polycrystalline alumina substrates and molten aluminium doped with magnesium as a wetting agent has been studied using the sessile drop technique. The time required for equilibrium attainment is investigated. To explore the formation of possible phases at the interface, electron microscopic studies along with EDX analysis have been employed. It is found that magnesium reduces the time and temperature required for equilibrium in the Al/Al₂O₃ system. The Al-7 wt% Mg and Al-10 wt% Mg alloys can wet alumina at temperatures as low as 900 °C. It is also found that molten aluminium doped with magnesium can wet polycrystalline alumina at temperatures below 1000 °C. A thin reaction layer was observed at the Al-Mg/Al₂O₃ interface in the present study.     

Preparation of CuInS2 thin films by metal-organic decomposition

Metal-organic decomposition (MOD) technique has been developed as a low cost thin film CuInS₂ preparation method for solar cell application. XRD and Raman spectra measurement revealed that deposited films contain CuInS₂. Stoichiometric films with a bandgap of 1.53 eV and an FWHM of 0.45° were obtained from a solution with Cu/In=1.5.     

Investigation on the effect of Zr doping in ZnO thin films by spray pyrolysis

Zirconium doped zinc oxide thin films with enhanced optical transparency were prepared on Corning 1737 glass substrates at the substrate temperature of 400 °C by spray pyrolysis method for various doping concentrations of zirconium (IV) chloride in the spray solution. The X-ray diffraction studies reveal that the films exhibit hexagonal crystal structure with polycrystalline grains oriented along (0 0 2) direction. The crystalline quality of the films is found to be deteriorating with the increase of doping concentration and acquires amorphous state for higher concentration of 8 at.% in precursor solution. The average transmittance for 5 at.% (solution) zirconium doped ZnO film is significantly increased to ∼92% in the visible region of 500-800 nm. The room temperature photoluminescence (PL) spectra of films show a band edge between 3.41 and 3.2 eV and strong blue emission at 2.8 eV irrespective of doping concentration and however intensity increases consistently with doping levels. The vacuum annealing at 400 °C reduced the resistivity of the films significantly due to the coalescence of grains and the lowest resistivity of 2 × 10⁻³ Ω cm is observed for 3 at.% (solution) Zr doped ZnO films which envisages that it is a good candidate for stable TCO material.     

Effect of indium doping in CdO thin films prepared by spray pyrolysis technique

Preparation of transparent and conducting indium doped CdO thin films by spray pyrolysis on glass substrate is reported for various concentration of indium (2-8 wt%) in the spray solution. The electrical, optical and structural properties of indium doped CdO films were investigated using different techniques such as Hall measurement, optical transmission, X-ray diffraction and scanning electron microscope. X-ray analysis shows that the undoped CdO films are preferentially orientated along (2 0 0) crystallographic direction. Increase of indium doping concentration increases the films packing density and reorient the crystallites along (1 1 1) plane. A minimum resistivity of 4.843×10⁻⁴ Ω cm and carrier concentration of 3.73×10²⁰ cm⁻³ with high transmittance in the range 300-1100 nm were achieved for 6 wt% indium doping. The band gap value increases with doping concentration and reaches a maximum of 2.72 eV for 6 wt% indium doping from 2.36 eV of that of undoped film. The minimum resistivity achieved in the present study is found to be the lowest among the reported values for In-doped CdO films prepared by spray pyrolysis method.     

Hydrogen adsorption on rhodium: Hydride formed on the surface of thin rhodium films

H₂ interaction with thin Rh films deposited on Pyrex glass under UHV conditions has been studied by simultaneous measurement of work function changes ΔΦ and hydrogen pressure P, at selected constant temperatures: 78 and 298 K. Prior to the adsorption experiments the thin film topography was illustrated using the AFM and STM methods. The influence of hydrogen adsorption on the resistance of thin Rh film was examined in the course of an independent experiment. The number of sites accessible for adsorption on the thin Rh film surface was found determining population of oxygen adatoms within the monolayer at 78 K, when incorporation of these adspecies below the surface is negligible. It was established that at all examined temperatures hydrogen adsorption led to coverage Θ approaching 1 under equilibrium pressure below 10⁻³ Pa, increasing the work function. Under higher H₂ pressure an additional uptake of hydrogen leading to Θ ∼ 1.68 at 298 K, and to Θ ∼ 2 at 78 K is reached. On this surface at low temperatures there exist weakly bound, reversibly adsorbed, positively charged adspecies characteristic for hydrogen adsorption on transition metal hydrides. The change of thin Rh film resistance caused by hydrogen adsorption was not measurable.     

Enhanced photo-induced hydrophilicity of the sol-gel-derived ZnO thin films by Na-doping

Na-doped ZnO thin films with different Na/Zn ratio were prepared by sol-gel method. The microstructure, chemical composition, surface morphology, and wettability of the thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy, and water contact angle apparatus. The relation of wettability and Na/Zn ratio has been studied in detail. The wetting behavior of the thin films can be reversibly switched from hydrophobic to hydrophilic, through alternation of UV illumination and dark storage (or thermal treatment). Photo-induced hydrophilicity of the thin films increases with increasing Na/Zn ratio up to 0.08 and then decreases. The mechanism can be attributed to surface nanostructure and the concentration of Na doping.     

Studies on surface deformation of copper sulphide thin films by holographic interferometry technique

Holographic interferometry technique used to study the surface deformation of electrodeposited copper sulphide thin films on stainless steel substrate is here presented. It is concerned with the formation and interpretation of fringe patterns, which appears when a wave generated at some earlier time and stored in a hologram is later reconstructed by interfering with comparison wave. The proposed technique uses double exposure holographic interferometry (DEHI) together with simple mathematical relation, which allows immediate finding of stress, mass deposited and thickness of thin film. It must be further noted that, fringe spacing changes with time of deposition as well as solution concentration. The structural study (XRD) is carried out for the confirmation.     

Structural characterization and optical properties of UO2 thin films by magnetron sputtering

Uranium dioxide films were deposited on Si (1 1 1) substrates by dc magnetron sputtering method at different sputtering parameters. The structure, morphology and chemical state of the films were studied by field emission scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and atomic force microscopy. Influences of film thickness on the microstructure and optical properties were investigated. Experimental results show that the film crystallites are preferentially oriented with the (1 1 1) planes. The average grain size increases with increasing film thickness. AFM images show that the root mean square roughness of the films is between 1.2 nm and 2.1 nm. Optical constants (refractive index, extinction coefficient) of the films in the wavelength range of 350-1000 nm are obtained by ellipsometric spectroscopy. The result shows that the refractive index decreases with the increasing film thickness, while extinction coefficient increases with the film thickness.     

TMOS based water repellent silica thin films by co-precursor method using TMES as a hydrophobic agent

The present paper describes the room temperature synthesis of dip coated water repellent silica coatings on glass substrates using trimethylethoxysilane (TMES) as a co-precursor. Silica sol was prepared by keeping the molar ratio of tetramethoxysilane (TMOS) precursor, methanol (MeOH) solvent, water (H₂O) constant at 1:29.27:2.09 respectively, with 0.5 M NH₄OH throughout the experiments and the TMES/TMOS molar ratio (M) was varied from 0 to 3.8. It was found that with an increase in M value, the roughness and hydrophobicity of the films increased, however the optical transmission decreased from 93% to 57% in the visible range. The hydrophobic silica films retained their hydrophobicity up to a temperature of 250 °C and above this temperature the films became hydrophilic. The hydrophobic silica thin films were characterized by taking into consideration the surface roughness studies, Fourier transform infrared (FT-IR) spectroscopy, percentage of optical transmission, scanning electron microscopy (SEM) and contact angle measurements.     

Effect of Er doping on optical band gap energy of TiO2 thin films prepared by spin coating

In order to evaluate the effect of Er doping in the range of 0–1.0 mol% on optical indirect band gap energy (E_g) of the film, the Er-doped TiO₂ (Er-TiO₂) thin films were spin-coated onto fluorine-doped SnO₂ coated (FTO) glasses. Glancing angle X-ray diffraction (GAXRD) results indicated that the films whose thickness was 550 nm consisted of pure anatase and FTO substrate. The anatase (101) TiO₂ peaks became broader and weaker with the rise in Er content. The apparent crystallite size decreased from 12 nm to 10 nm with increasing the amount of Er from 0 mol% to 1.0 mol%. UV–vis spectrophotometry showed that the values of E_g decreased from 3.25 eV to 2.81 eV with the increase of Er doping from 0 to 0.7 mol%, but changed to 2.89 eV when Er content was 1.0 mol%. The reduction in E_g might be attributed to electron and/or hole trapping at the donor and acceptor levels in the TiO₂ band structure.     

Properties of Dy-doped ZnO nanocrystalline thin films prepared by pulsed laser deposition

Highly transparent conductive Dy₂O₃ doped zinc oxide (ZnO)_1-x(Dy₂O₃)_x nanocrystalline thin films with x from 0.5% to 5% have been deposited on glass substrate by pulsed laser deposition technique. The structural, electrical and optical properties of Dy₂O₃ doped thin films were investigated as a function of the x value. The experimental results show that the Dy concentration in Dy-doped ZnO thin films has a strong influence on the material properties especially electrical properties. The resistivity decreased to a minimum value of 5.02 × 10⁻⁴ Ω cm with x increasing from 0.5% to 1.0%, then significantly increased with the further increasing of x value. On the contrary, the optical direct band gap of the (ZnO)_1-x(Dy₂O₃)_x films first increased, then decreased with x increasing. The average transmission of Dy₂O₃ doped zinc oxide films in the visible range is above 90%.     

Morphology of alkali halide thin films

Two alkali halide adsorbate-substrate systems were investigated by atomic force microscopy (AFM) working in contact mode. Adsorbate film orientation relative to the substrate was determined from the arrangement of the atomic steps of the substrate and the edges of the forming islands. In this work we present experimental results obtained for systems: NaCl/LiF(0 0 1) and LiF/NaCl(0 0 1), which exhibit a strong tendency of the self-assembly into regular structures.     

Effect of C doping on the structural and optical properties of sol–gel TiO2 thin films

Undoped and C-doped TiO₂ thin films have been prepared by sol–gel process. Their structure and optical properties have been investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and UV–vis spectroscopy. It has been observed that C dopants retard the transformation from anatase-to-rutile phase. Namely, C doping effect is attributed to the anatase phase stabilization. The optical analyses show that the optical band gap of anatase C-doped TiO₂ decreases with increasing amount of C. Also, it is founded that C dopants have been shown to make TiO₂ have a visible light photoresponse.     

Excimer laser ablation of thin titanium oxide films on glass

Thin titanium dioxide films are deposited on glass substrates by magnetron sputter deposition. They are irradiated in air, by means of a KrF excimer laser. The ablation rate is measured as a function of the laser fluence per pulse, F, and of the number of pulses, N. Above a fluence threshold, the films are partially ablated. The ablated thickness does not vary linearly with N. This is the signature of a negative feedback between the film thickness and the ablation rate. The origin of this negative feedback is shown to be due to either thermal or electronic effects, or both. At high F, the film detachs from the substrate.     

Effects of annealing ambience on ZnO:N films grown by MOCVD and the p-type doping mechanism of ZnO:N films investigated by XANES

ZnO:N thin films were deposited on sapphire substrate by metal organic chemical vapor deposition with NH₃ as N-doping sources. The reproducible p-type ZnO:N film with hole concentration of ∼10¹⁷ cm⁻³ was successfully achieved by subsequent in situ thermal annealing in N₂O plasma protective ambient, while only weak p-type ZnO:N film with remarkably lower hole concentration of ∼10¹⁵ cm⁻³ was obtained by annealing in O₂ ambient. To understand the mechanism of the p-type doping behavior of ZnO:N film, X-ray photoelectron spectroscopy (XPS) and soft X-ray absorption near-edge spectroscopy (XANES) measurements have been applied to investigate the local electronic structure and chemical states of nitrogen atoms in ZnO:N films.