Ni thin films vacuum-evaporated on polyethylene naphthalate substrates with and without the application of magnetic field

We study the structural properties of the surface roughness, the surface mound size and the interfacial structure in Ni thin films vacuum-deposited on polyethylene naphthalate (PEN) organic substrates with and without the application of magnetic field and discuss its feasibility of fabricating quantum cross (QC) devices. For Ni/PEN evaporated without the magnetic field, the surface roughness decreases from 1.3 nm to 0.69 nm and the surface mound size increases from 32 nm to 80 nm with the thickness increased to 41 nm. In contrast, for Ni/PEN evaporated in the magnetic field of 360 Oe, the surface roughness tends to slightly decrease from 1.3 nm to 1.1 nm and the surface mound size shows the almost constant value of 28-30 nm with the thickness increased to 35 nm. It can be also confirmed for each sample that there is no diffusion of Ni into the PEN layer, resulting in clear Ni/PEN interface and smooth Ni surface. Therefore, these experimental results indicate that Ni/PEN films can be expected as metal/insulator hybrid materials in QC devices, leading to novel high-density memory devices.     

Carbon monoxide adsorption on Pd-deposited Cu(1 1 0) surface: Infrared reflection absorption and temperature programmed desorption studies

We investigated carbon monoxide (CO) adsorption and desorption behaviors on 0.1-nm-, 0.15-nm-, and 0.3-nm-thick-Pd-deposited Cu(1 1 0) surfaces using infrared reflection absorption (IRRAS) and temperature-programmed desorption (TPD) spectroscopic methods. CO was exposed to the 0.1-nm-thick-Pd/Cu(1 1 0) surface at the substrate temperature of 90 K. The IR band attributable to CO bonded to Cu atoms emerged at 2092 cm⁻¹: the band was located at 2100 cm⁻¹ at saturation coverage, with a shoulder at 2110 cm⁻¹. In addition to these bands, weak absorptions attributable to the PdCO bonds appeared at 2050 and 1960 cm⁻¹. With increasing Pd thickness, the Pd related-bands became increasingly prominent. Particularly at the early stage of exposure, the band at 2115 cm⁻¹ became visible. The band at 2117 cm⁻¹ dominated the spectra all through the exposures for the 0.3-nm-thick-Pd surface. The TPD spectra of the surfaces showed two remarkable features at around 220-250 and 320-390 K, ascribable ,respectively, to CuCO and PdCO. The desorption peaks shifted to higher temperatures with increasing Pd thickness. Based on the TPD and IRRAS results, we discuss the adsorption-desorption behaviors of CO on the Pd/Cu(1 1 0) surfaces.     

Raman scattering studies of the Ge-In sulfide glasses

Room temperature Raman scattering measurements of samples of the (1−x)GeS₂-xIn₂S₃ (x=0.00-0.35) system have been conducted together with the FTIR transmission spectra of partial samples. Based on the Raman scattering and FTIR transmission spectra of the prepared defect spinel polycrystalline In₂S₃, the additional peaks at 306 and 245 cm⁻¹ were ascribed to the local symmetric stretching vibration of InS₄ tetrahedra and InS₆ octahedra, respectively. According to the Raman scattering spectral evolution of the Ge-In sulfide glasses, the microstructure of the studied glasses was considered to be that S₃Ge-GeS₃ and S₃In-InS₃ ethane-like units originated from the sulfur deficient with the addition of In₂S₃ are homogeneously dispersed in a disordered polymer network formed by GeS₄, InS₄ tetrahedra and a small quantity of InS₆ octahedra interconnected by sulfur bridges.     

One-phonon-assisted resonant electron Raman scattering of GaAs quantum dots in an AlAs matrix

We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with the bulk-like longitudinal optical (LO) and interface optical (IO) phonon modes in semiconductor quantum dots (QDs). Electron states are considered to be confined within the QDs. We consider the Fröhlich electron-phonon interaction in the framework of the dielectric continuum approach. We study selection rules for the processes. Some singularities in the Raman spectra are found and interpreted. A discussion of the phonon behavior for QDs with large and small size is presented. The numerical results are also compared with that of experiments.     

Surface enhanced Raman scattering in organic thin films covered with silver, indium and magnesium

In situ resonant Raman spectroscopy was applied for the investigation of the interface formation between silver, indium and magnesium with polycrystalline organic semiconductor layers of 3,4,9,10-perylene tetra-carboxylic dianhydride (PTCDA). The spectral region of internal as well as external vibrational modes was recorded in order to achieve information related to the chemistry and the structure of the interface as well as to morphology of the metal layer. The experiments benefit from a strong enhancement of the internal mode scattering intensities which is induced by the rough morphology of deposited metals leading to surface enhanced Raman scattering (SERS). The external modes, on the other hand, are attenuated at different rates indicating that the diffusion of the metal atoms into the crystalline layers is highest for indium and lowest for magnesium.     

Amorphization and grain size effect on milled PbTiO3 studied by Raman scattering and visible photoluminescence emission

Raman scattering and photoluminescence (PL) studies on milled PbTiO₃ are presented in this paper. The results suggest that the visible PL emission could be related to both the localized states in the interface between the amorphous layer and the crystalline core and the amorphous layer itself. The Raman spectrum of PbTiO₃ milled for a long time showed the vibrational density of states, and a detailed analysis of the soft mode allowed us to conclude that the PbTiO₃ crystalline core did not experience any structural phasetransition. Received: 2 February 2001 / Accepted: 23 July 2001 / Published online: 17 October 2001     

Surface chemical modification of fullerene by mechanochemical treatment

In this study different encapsulating agents have been used for chemical modification of fullerenes. Fullerenes have reacted with tetrahydrofuran, sodium dodecyl sulfate, sodium dodecylbenzene sulfonate and ethylene vinyl acetate-ethylene vinyl versatate at room temperature under mechanical milling. The obtained powder has been dispersed in water by ultrasonication. The fullerene based colloids have been characterized by UV-vis, FTIR, Raman spectroscopy and atomic force microscopy. FTIR and Raman analysis have shown the presence of C₆₀ after surface functionalization.     

Anharmonic behaviour of BaFCl using Raman scattering

Raman scattering from oriented single crystals of BaFCl was recorded at various temperatures from 20 to 1073 K for the first time. The Raman spectra, corrected for phonon population, were fitted to the sum of four Lorentzian peaks. The peak frequencies and full width at half maximum (FWHM) of the peaks were obtained from the fit. The FWHM is accounted for by cubic and quartic anharmonic processes. The quartic anharmonicity of the mode increases with the mode frequency. The quartic anharmonicity of the fluorine mode is exceptionally high. The peak frequencies decrease linearly with the increasing temperature. Fluorine mode frequencies decrease more than the internal mode frequencies do. The LO-TO splitting of the fluorine modes and that of the internal modes increases with temperature indicating the increase of the ionic bonding character. The results are discussed. Received: 12 May 1997 / Accepted: 25 July 1997     

Surface modification of doped ZnO thin films

Effects of photo-assisted electrodeless and ion RF-sputter etching on the structural and optical properties of sputtered ZnO:Al thin films were investigated. Photo-assisted electrodeless etching was appropriate for getting “smooth” surfaces and ion RF-sputter etching by high power has significantly modified the surface roughness with an increase of the light diffuse transmittance.     

Raman Spectroscopic Studies of Pressure-Induced Phase Transitions on 1-Dodecene

Raman spectroscopic features of 1-dodecene are studied in a moissanite anvil cell up to 3.0 GPa at 21℃. Our data indicate that 1-dodecene is chemically stable under the experimental condition because no new Raman peaks can be observed. However, two significant discontinuities in the plots of Raman shift versus pressure indicate two phase transitions of 1-dodecene. One is liquid~olid transition at pressure of about 500 MPa, the other is solid-solid phase transition at pressure from 1300 to 1550 MPa. The latter is considered to be related to the orientational change of the plane structure of ethylene. A rudimentary phase diagrams for 1-dodecene, n-pentane, n-hexane are proposed based on the results and previous data.     

Atomic force microscopy study of thermal stability of silver selenide thin films grown on silicon

Silver selenide thin films were grown on silicon substrates by the solid-state reaction of sequentially deposited Se and Ag films of suitable thickness. Transmission electron microscopy and particle-induced X-ray emission studies of the as-deposited films showed the formation of single phase polycrystalline silver selenide from the reaction of Ag and Se films. Atomic force microscopy images of the as-deposited and films annealed at different temperatures in argon showed the film morphology to evolve into an agglomerated state with annealing temperature. The results indicate that when annealed above 473 K, silver selenide films on silicon become unstable and agglomerate through holes generated at grain boundaries.     

Surface enhanced Raman scattering and photoluminescence properties of catalytic grown ZnO nanostructures

Sword-like (diameter ranging from 40 nm to 300 nm) and needle-like zinc oxide (ZnO) nanostructures (average tip diameter ∼40 nm) were synthesized on annealed silver template over silicon substrate and directly on silicon wafer, respectively via thermal evaporation of metallic zinc followed by a thermal annealing in air. The surface morphology, microstructure, chemical analysis and optical properties of the grown samples were investigated by field emission scanning electron microscopy, X-ray diffraction, energy dispersive X-ray analysis, room temperature photoluminescence and Raman spectroscopy. The sword-like ZnO nanostructures grown on annealed silver template are of high optical quality compared to needle-like ZnO nanorods for UV emission and show enhanced Raman scattering.     

wave superconductivity: Analysis of the electronic Raman data of and other cuprates

After briefly recalling the d + s model valid for some anisotropic high T c superconductors, we present a theory of electronic Raman spectra in that model and then compare it with new experimental data obtained for an overdoped Y123 single crystal. The d + s model appears to describe satisfactorily the experimental results, indicating a possible doping dependence of the mixing ratio. We note that the Raman spectrum of the overdoped Bi2212 could also be accounted for by the d + s superconductivity model. The case of Hg1212 (or Hg1223) is reexamined. It appears that the spontaneous breakdown of d-wave symmetry may be rather universal in high T c cuprates. Received: 3 March 1998 / Accepted: 30 April 1998     

Positioning of cationic silver nanoparticle by using AFM lithography and electrostatic interaction

One-dimensional metal lines of silver nanoparticles with a nano-sized width were generated onto silicon surface by using a nano-level lithography technique, field induced oxidation (FIO) by AFM, on self-assembled monolayer-modified Si wafers. This FIO technique provided SiO₂ lines a width of less than 100 nm. Short-time immersion of partially anodized silicon surface which is covered by a cationic silanol surfactant ((CH₃O)₃SiCH₂CH₂CH₂N(CH₃)₃⁺Cl⁻)-monolayer into quaternary ammonium (HSCH₂CH₂N(CH₃)₃⁺Br⁻)-covered silver nanoparticles readily and reproducibly gave nano-metal lines of silver onto silicon wafers. Hydrophilicity of the whole wafer surface was indispensable for homogeneously wetting the anodized SiO₂ area with a nanodimensional width.     

Porous silicon as efficient surface enhanced Raman scattering (SERS) substrate

Silver nanocrystallites are obtained through immersion of porous silicon samples in AgNO₃ solutions and a successive thermal annealing. The efficiency of nanostructures as surface enhanced Raman scattering (SERS) substrates is checked on cyanine-based dyes and horseradish peroxidase, evidencing detectable concentrations as low as 10⁻⁷ to 10⁻⁸ M. The substrate efficiency is strictly related to the Ag particle morphology, which could yield to either local surface plasmons (LSP) coupled to individual particles or to inter-particle short-range interaction.     

Raman Investigation of BaWO4-II Phase under Hydrostatic Pressures up to 14.8GPa

The BaW04-17 phase is synthesized at 5.0 GPa and 610~C with a cubic-anvil apparatus and identified by XRD. Raman scattering measurement is carried out to investigate the phase behaviour of a pure BaW04-Ⅱ phase （space group P21/n, Z = 8） under hydrostatic pressures up to 14.8 GPa at ambient temperature. In each spectrum recorded for this phase, 27 Raman modes are observed, and all bands shift toward higher wavenumber with a pressure dependence ranging from 3.8 to 0.2 cm- 1/GPa. No pressure-driven phase transition occurs in the entire pressure range in this study. Our results indicate that the previously reported high pressure phase of Ba WO4 at pressure above about 10 GPa and room temperature （Errandonea et al. Phys. Rev. B 73（2006）224103） is not the BaW04-Ⅱ phase.     

Vibrational dynamics of fullerene molecules adsorbed on metal surfaces studied with synchrotron infrared radiation

Infrared (IR) spectroscopy of chemisorbed C₆₀ on Ag (111), Au (110) and Cu (100) reveals that a non-IR-active mode becomes active upon adsorption, and that its frequency shifts proportionally with the charge transferred from the metal to the molecule by about 5 cm^-1 per electron. The temperature dependence of the frequency and the width of this IR feature have also been followed for C₆₀/Cu (100) and were found to agree well with a weak anharmonic coupling (dephasing) to a low-frequency mode, which we suggest to be the frustrated translational mode of the adsorbed molecules. Additionally, the adsorption is accompanied by a broadband reflectance change, which is interpreted as due to the scattering of conduction electrons of the metal surface by the adsorbate. The reflectance change allows determination of the friction coefficient of the C₆₀ molecules, which results in rather small values (∼2×10⁹ s^-1 for Ag and Au, and ∼1.6×10⁹ s^-1for Cu), consistent with a marked metallic character of the adsorbed molecules. Pre-dosing of alkali atoms onto the metal substrates drastically changes the IR spectra recorded during subsequent C₆₀ deposition: anti-absorption bands, as well as an increase of the broadband reflectance, occur and are interpreted as due to strong electron–phonon coupling with induced surface states. Received: 6 June 2001 / Accepted: 23 October 2001 / Published online: 3 April 2002     

Preparation of Mn<Subscript>3</Subscript>O<Subscript>4</Subscript> nanowires by calcining the precursor powders synthesized in a novel inverse microemulsion

Manganese oxide (hausmannite) nanowires were prepared by annealing precursor powders at a temperature of 800 °C for 3 h, which were produced in a novel inverse microemulsion (IμE) system. The microstructures of the as-prepared Mn₃O₄ nanowires were investigated by means of X-ray diffraction, transmission electron microscopy, and Raman spectra. It has been found that the Mn₃O₄ nanowires were relatively straight and their surfaces were smooth with a typical diameter of 75–150 nm. The formation mechanism of the Mn₃O₄ nanowires is discussed. Received: 30 May 2002 / Accepted: 7 October 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +86-25/359-5535, E-mail: wangqun@nju.edu.cn     

Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAs

It is shown that Raman spectroscopy can provide useful information on characteristic properties of thin crystalline films of compound semiconductors. Crystal orientation, carrier concentration, scattering times of charge carriers, composition of mixed crystals and depth profiles can be studied in thin layers and heterostructures of GaAs and Al_xGa_1−xAs. The advantages and disadvantages of Raman scattering compared to conventional characterization methods are discussed.     

Morphological and electronic properties of the thin film phase of pentacene investigated by AFM and STM/STS

We investigated the morphological, structural and electronic properties of Pentacene thin films grown by vacuum thermal evaporation on different inert substrates at room temperature. The results of our AFM and STM analysis give an interplanar spacing of 1.54 nm corresponding to the (0 0 1) distance of the so-called “thin film phase”. The STS measurements show an HOMO-LUMO gap of 2.2 eV.