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1.
The effect of post sintering annealing on the dielectric response of (Pb1−xBax)(Yb0.5Ta0.5)O3 ceramics in the diffuse phase transition range (x=0.2) has been investigated. The samples are prepared by conventional solid-state reaction method. The samples are sintered at 1300 °C for 2 h and annealed at different temperatures (800, 900 and 1000 °C) for 8 h and at 800 °C for different time durations (8, 12 and 24 h). A significant change in the dielectric response has been observed in all the samples. The dielectric constant increases remarkably and the dielectric loss tangent decreases. The dielectric peaks of the annealed samples are observed to be more diffused with noticeable frequency dispersion compared to the as sintered sample.  相似文献   

2.
Ca1−xBixNb1−xCrxO3 (x=0.01-0.5) ceramic powders were synthesized using the sol-gel process. The single-phase solids can be presented at x=0.01 and 0.03. The coexistence of orthorhombic perovskite and the secondary phase of BiCrO3 was verified, as presented for x=0.05-0.5. Grains with a micro-cube topography were obtained for x=0.3-0.5. The average grain size is about 0.4 and 1.1 μm for x=0.3 and 0.5, respectively. The highest dielectric constant peak was measured at around 55 °C for x=0.5 and at 75 °C for x=0.3. The high dielectric constant was caused by the formation of barrier layers at the interface of the bi-phase mixed ceramics. Space charge polarization contributed to the observed behavior.  相似文献   

3.
Zn1−xCoxO (0 ≤ x ≤ 0.15) thin films grown on Si (1 0 0) substrates were prepared by a sol-gel technique. The effects of Co doped on the structural, optical properties and surface chemical valence states of the Zn1−xCoxO (0 ≤ x ≤ 0.15) films were investigated by X-ray diffraction (XRD), ultraviolet-visible spectrometer and X-ray photoelectron spectroscopy (XPS). XRD results show that the Zn1−xCoxO films retained a hexagonal crystal structure of ZnO with better c-axis preferred orientation compared to the undoped ZnO films. The optical absorption spectra suggest that the optical band-gap of the Zn1−xCoxO thin films varied from 3.26 to 2.79 eV with increasing Co content from x = 0 to x = 0.15. XPS studies show the possible oxidation states of Co in Zn1−xCoxO (0 ≤ x ≤ 0.05), Zn0.90Co0.10O and Zn0.85Co0.15O are CoO, Co3O4 and Co2O3, with an increase of Co content, respectively.  相似文献   

4.
R. Ghosh 《Applied Surface Science》2009,255(16):7238-7242
MgxZn1−xO (x = 0.0-0.20) thin films have been deposited by sol-gel technique on glass substrates and the effect of growth ambient (air and oxygen) on the structural, and optical properties have been investigated. The films synthesized in both ambient have hexagonal wurtzite structure. The c-axis lattice constant decreases linearly with the Mg content (x) up to x = 0.05, and 0.10 respectively for air- and oxygen-treated films, above which up to x = 0.20, the values vary irregularly with x. The change in the optical band gap values and the ultraviolet (UV) peak positions of MgxZn1−xO films show the similar change with x. These results suggest that the formation of solid solution and thus the structural and optical properties of MgxZn1−xO thin films are affected by the growth ambient.  相似文献   

5.
Structural, electronic and optical properties as well as structural phase transitions of ternary alloy CdxZn1 − xS have been investigated using the first-principles calculations based on the density functional theory. We found that the crystal structure of CdxZn1 − xS alloys transforms from wurtzite to zinc blende as Cd content of x=0.83x=0.83. Effect of Cd content on electronic structures of CdxZn1 − xS alloys has been studied. The bandgaps of CdxZn1 − xS alloys with wurtzite and zinc blende structures decrease with the increase of Cd content. Furthermore, dielectric constant and absorption coefficient also have been discussed in detail.  相似文献   

6.
The magnetic and transport properties of nanocrystalline ZnxFe3−xO4 with x=0.0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0, respectively, fabricated by the sol-gel method have been investigated. Large magnetoresistance (MR) was observed and found to be originated both from the tunneling of the spin-polarized electrons across the adjacent ferromagnetic grains and the scattering by the canted spins at the grain surface near the grain boundaries. It has been revealed that the MR for the ZnxFe3−xO4 samples (x=0, 0.5 and 1.0) increases with the temperature decreasing from room temperature until a maximum is reached at around 55 K. Then a sharp drop occurs with the further decrease in temperature, regarded as a spin (cluster) glass transition. For the samples studied, a biggest low field (0.5 T) MR value of about 20% for x=0 at 55 K has been obtained. The mechanism of the MR behavior of the materials was discussed.  相似文献   

7.
Mixed manganese-zinc and nickel-zinc ferrites of composition Mn0.2Ni0.8−xZnxFe2O4 where x=0.4x=0.4, 0.5 and 0.6 have been synthesized by the citrate precursor technique. Decomposition of the precursor at temperatures as low as 500 °C gives the ferrite powder. The ferrites have been investigated for their electrical and magnetic properties such as saturation magnetization, initial permeability, Curie temperature, AC-resistivity and dielectric constant as a function of sintering temperature and zinc content. Structural properties such as lattice parameter, grain size and density are also studied. The mixed compositions exhibited higher saturation magnetizations at sintering temperatures as low as 1200 °C. While the Curie temperature decreased with zinc content, the permeability was found to increase. The AC-resistivity ranged from 105–107 Ω cm and decreased with zinc content and sintering temperature. The dielectric constants were lower than those normally reported for the Mn–Zn ferrites. Samples sintered at 1400 °C densified to about 94% of the theoretical density and the grain size was of the order of about 1.5 μm for the samples sintered at 1200 °C and increased subsequently with sintering temperature.  相似文献   

8.
Nanocrystalline Li0.5Fe2.5−xCrxO4 (2.5≤x≥0) ferrites were prepared by a sol-gel autocombustion route. X-ray diffraction was employed to confirm the cubic spinel phase formation of the ferrites. The lattice parameter decreases with increase in Cr content. The saturation magnetization, coercivity and remanance were studied as a function of Cr content. The dielectric constant and dielectric loss were measured as a function of frequency in the frequency range 20 Hz-1 MHz. Frequency dependence of dielectric constant shows dielectric dispersion due to the Maxwell-Wagner type of interfacial polarization. In order to understand the conduction mechanism, complex impedance measurements were carried out. The substitution of chromium plays an important role in changing the dielectric and magnetic properties of lithium ferrites.  相似文献   

9.
10.
Zn1−xNixFe2O4 ferrite nanoparticles were prepared by sol–gel auto-combustion and then annealed at 700 °C for 4 h. The results of differential thermal analysis indicate that the thermal decomposition temperature is about 210 °C and Ni–Zn ferrite nanoparticles could be synthesized in the self-propagating combustion process. The microstructure and magnetic properties were investigated by means of X-ray diffraction, scanning electron microscope, and Vibrating sample magnetometer. It is observed that all the spherical nanoparticles with an average grain size of about 35 nm are of pure spinel cubic structure. The crystal lattice constant declines gradually with increasing x from 0.8435 nm (x=0.20) to 0.8352 nm (x=1.00). Different from the composition of Zn0.5Ni0.5Fe2O4 for the bulk, the maximum Ms is found in the composition of Zn0.3Ni0.7Fe2O4 for nanoparticles. The Hc of samples is much larger than the bulk ferrites and increases with the enlarging x. The results of Zn0.3Ni0.7Fe2O4 annealed at different temperatures indicate that the maximum Ms (83.2 emu/g) appears in the sample annealed at 900 °C. The Hc of Zn0.3Ni0.7Fe2O4 firstly increases slightly as the grain size increases, and presents a maximum value of 115 Oe when the grains grow up to about 30 nm, and then declines rapidly with the grains further growing. The critical diameter (under the critical diameter, the grain is of single domain) of Zn0.3Ni0.7Fe2O4 nanoparticles is found to be about 30 nm.  相似文献   

11.
We tried to prepare the bulk dilute ferromagnetic semiconductor (DMS) by mechanical milling (MM). Experimental results were as following: (1) The observation of X-ray diffraction and transmitting electron microscopy showed that the particle diameter of host ZnO powder were reduced to about 10 nm by MM. (2) The MM for the mixtures of V2O5/ZnO or γ-Fe2O3/ZnO realizes the V- or Fe-doped ZnO nano-powders. (3) The values of magnetization under the field of 5 kOe were nearly saturated to 0.8×10−3 to 3×10−3 μB/V-ion for VxZn1−xO (x=0.05, 0.1 and 0.2), and 0.2–0.3 μB/Fe-ion for FexZn1−xO (x=0.05 and 0.1) at room temperature. The above results show that the ferromagnetic DMS powder of VxZn1−xO and FexZn1−xO were successfully prepared by MM method.  相似文献   

12.
We present a systematic investigation on the structural and magnetic properties of Zn1−xCoxO nanoparticles synthesized by an auto-combustion method. The single-phase Zn1−xCoxO crystallize in the wurtzite-type structure with a homogeneity range as large as x≈0.30, which enables the observation of some anomalies. The lattice parameter a and the unit cell volume V increase with the Co content, and anomalies are discernable around x=0.15 on the ax and Vx curves. The magnetization data show no evidence of ferromagnetic (FM) ordering in our samples down to T=5 K, and the magnetization at 5 K and 5 T exhibits a maximum around x=0.125. Based on the detailed analysis of the magnetization data and the donor impurity band exchange model, the anomalies on composition dependence of both the lattice parameters and magnetization can be associated with an occurrence of cation percolation around the threshold xp (≈1.5/Z=0.125 for three-dimensional lattice with coordination number Z=12). Within the framework of the donor impurity band exchange model, the absence of FM in the well-characterized Zn1−xCoxO can be attributed to insufficient donor electron concentration.  相似文献   

13.
We present the results of the effect of Al substitution on the magnetic and electrical properties of Li0.2Zn0.6Fe2.2−xAlxO4 ferrites (0.0≤x≤0.5) prepared by the standard ceramic technique. The characterization has been performed using XRD, SEM, magnetic and dielectric response in frequency. XRD analysis confirms that the system exhibits polycrystalline single phase cubic spinel structure only for low dopant content. Doping decreases the dielectric loss tangent and the ferrite conductivity in more than two orders of magnitude in the whole analyzed frequency range. Attenuation has a maximum intensity (86 dB) near 90 MHz for x=0.4. The wider bandwidth at 20 dB (94.6 MHz) is for x=0.3.  相似文献   

14.
HfxZn1−xO thin films (x=3, 7, 10 and 15 mol%) were deposited on Si (1 0 0) using pulsed laser deposition. The influence of the Hf concentration on the microstructure and optical properties of the films was studied. It is found that Hf ions can be effectively doped into ZnO and all films crystallize in the hexagonal wurtzite structure with a preferred c-axis orientation. The lattice constants of HfxZn1−xO films increase with the Hf contents. Two ultraviolet peaks centered at about 364 and 380 nm coexist in the fluorescent spectra. With increasing the Hf contents, the intensity of fluorescent peaks enhances remarkably. At the same time the energy gaps gradually increase, while the positions of ultraviolet peaks remain unchanged. The mechanism of luminescent emission for HfxZn1−xO films was discussed.  相似文献   

15.
Solid-state reaction processing technique was used to prepare ZnxNb1−xO (0≤x≤0.02) polycrystalline bulk samples. In the present study, we find that their lattice parameters a and c tend to decrease with increasing amount of Nb additive. The electrical conductivity of all the Zn1−xNbxO samples increased with increasing temperature, indicating a semiconducting behavior in the measured temperature range. The addition of Nb2O5 to ZnO led to an increase in the electrical conductivity and a decrease in the absolute value of the Seebeck coefficient. The best performance at 1000 K has been observed for nominal 0.5 at% Nb-doped ZnO, with an electrical resistivity of about 73.13 (S cm−1) and Seebeck coefficient of ∼257.36 μV K−1, corresponding to a power factor (S2σ) of 4.84×10−4 Wm−1 K−2. The thermal conductivity, κ, of the oxide decreased as compared to pure ZnO. The figure of merit ZT values of ZnO-doped Nb2O5 samples are higher than the ZnO pure sample, demonstrating that the Nb2O5 addition is fairly effective for enhancing thermoelectric properties.  相似文献   

16.
To study the factors affecting the dielectric and piezoelectric properties of bismuth-containing complex perovskites, the solid solution (1−x)Pb(Mg1/3Nb2/3)O3-xBi(Mg2/3Nb1/3)O3 was prepared by the solid state reaction method and its dielectric and piezoelectric properties were investigated. It is found that (1) at room temperature, the nonlinearity of the DE-loop for Pb(Mg1/3Nb2/3)O3 is completely suppressed at a rather low x (<5%); (2) dielectric constant versus temperature curves deviate from the Curie-Weiss law at a temperature Td much higher than the dielectric constant peak temperature Tm and TmTd decreases considerably with increasing x; and (3) frequency dispersion ΔTm=Tm (1 MHz)−Tm (10 kHz) increases with increasing x. Possible factors responsible for the variation of the dielectric and piezoelectric properties with x are discussed.  相似文献   

17.
We investigated the nanotribological properties of Zn1−xMnxO epilayers (0 ≤ x ≤ 0.16) grown by molecular beam epitaxy (MBE) on sapphire substrates. The surface roughness and friction coefficient (μ) were analyzed by means of atomic force microscopy (AFM) and hysitron triboscope nanoindenter techniques.The nanoscratch system gave the μ value of the films ranging from 0.17 to 0.07 and the penetration depth value ranging 294-200 nm when the Mn content was increased from x = 0 to 0.16. The results strongly indicate that the scratch wear depth under constant load shows that higher Mn content leads to Zn1−xMnxO epilayers with higher shear resistance, which enhances the Mn-O bond. These findings reveal that the role of Mn content on the growth of Zn1−xMnxO epilayers can be identified by their nanotribological behavior.  相似文献   

18.
Nanoparticles of Co1−xZnxFe2O4 with stoichiometric proportion (x) varying from 0.0 to 0.6 were prepared by the chemical co-precipitation method. The samples were sintered at 600 °C for 2 h and were characterized by X-ray diffraction (XRD), low field AC magnetic susceptibility, DC electrical resistivity and dielectric constant measurements. From the analysis of XRD patterns, the nanocrystalline ferrite had been obtained at pH=12.5–13 and reaction time of 45 min. The particle size was calculated from the most intense peak (3 1 1) using the Scherrer formula. The size of precipitated particles lies within the range 12–16 nm, obtained at reaction temperature of 70 °C. The Curie temperature was obtained from AC magnetic susceptibility measurements in the range 77–850 K. It is observed that Curie temperature decreases with the increase of Zn concentration. DC electrical resistivity measurements were carried out by two-probe method from 370 to 580 K. Temperature-dependent DC electrical resistivity decreases with increase in temperature ensuring the semiconductor nature of the samples. DC electrical resistivity results are discussed in terms of polaron hopping model. Activation energy calculated from the DC electrical resistivity versus temperature for all the samples ranges from 0.658 to 0.849 eV. The drift mobility increases by increasing temperature due to decrease in DC electrical resisitivity. The dielectric constants are studied as a function of frequency in the range 100 Hz–1 MHz at room temperature. The dielectric constant decreases with increasing frequency for all the samples and follow the Maxwell–Wagner's interfacial polarization.  相似文献   

19.
(Tl0.5Pb0.5)Sr2Ca(Cu2−xMx)O7 (M=Co, Ni and Zn) have been synthesized and investigated by means of X-ray diffraction, scanning electron microscope, electrical resistivity and magnetic susceptibility measurements. X-ray diffraction patterns show that all studied samples contain the nearly single ‘1212’ phase. They crystallize in a tetragonal unit cell with a=3.8028-3.8040 Å and c=12.0748-12.1558 Å. In (Tl0.5Pb0.5)Sr2Ca(Cu2−xMx)O7 system (M=Co or Ni), the superconducting critical temperature Tc decreases linearly with both Co and Ni concentrations and the rate of Tc decrease is around −6.5 and −7.0 K/at%, respectively. For (Tl0.5Pb0.5)Sr2Ca (Cu2−xZnx)O7 system, the dependence of Tc on the Zn dopant concentration deviates from a linear behavior and the Zn substitution suppresses Tc much less (−2.5 K/at%) than the Co and Ni substitutions. The suppression in Tc in Co and Ni doped samples are attributed to the magnetic pair-breaking mechanism and the reduction in the carrier concentration. The suppression of Tc in Zn doped samples is not caused by the reduction in carrier concentration which should remain constant, but rather due to nonmagnetic pair-breaking mechanism induced by disorder as well as the filling of the local Cu dx2y2 state due to the full d band of Zn ions.  相似文献   

20.
ZnO nanorod arrays were synthesized by chemical-liquid deposition techniques on MgxZn1−xO (x = 0, 0.07 and 0.15) buffer layers. It is found that varying the Mg concentration could control the diameter, vertical alignment, crystallization, and density of the ZnO nanorods. The X-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area electron diffraction (SAED) data show the ZnO nanorods prefer to grow in the (0 0 2) c-axis direction better with a larger Mg concentration. The photoluminescence (PL) spectra of ZnO nanorods exhibit that the ultraviolet (UV) emission becomes stronger and the defect emission becomes weaker by increasing the Mg concentration in MgxZn1−xO buffer layers.  相似文献   

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