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1.
Infrared reflection absorption spectroscopy (IRRAS) was used to investigate carbon monoxide (CO) adsorption on 0.15 nm-thick-0.6 nm-thick Pd-deposited Pt(1 1 1) bimetallic surfaces: Pdx/Pt(1 1 1) (where x is the Pd thickness in nanometers) fabricated using molecular beam epitaxial method at substrate temperatures of 343 K, 473 K, and 673 K. Reflection high-energy electron diffraction (RHEED) measurements for Pd0.15-0.6 nm/Pt(1 1 1) surfaces fabricated at 343 K showed that Pd grows epitaxially on a clean Pt(1 1 1), having an almost identical lattice constant of Pt(1 1 1). The 1.0 L CO exposure to the clean Pt(1 1 1) at room temperature yielded linearly bonded and bridge-bonded CO-Pt bands at 2093 and 1855 cm−1. The CO-Pt band intensities for the CO-exposed Pdx/Pt(1 1 1) surfaces decreased with increasing Pd thickness. For Pd0.3 nm/Pt(1 1 1) deposited at 343 K, the 1933 cm−1 band caused by bridge-bonded CO-Pd enhanced the spectral intensity. The linear-bonded CO-Pt band (2090 cm−1) almost disappeared and the bridge-bonded CO-Pd band dominated the spectra for Pd0.6 nm/Pt(1 1 1). With increasing substrate temperature during the Pd depositions, the relative band intensities of the CO-Pt/CO-Pd increased. For the Pd0.3 nm/Pt(1 1 1) deposited at 673 K, the linear-bonded CO-Pt and bridge-bonded CO-Pd bands are located respectively at 2071 and 1928 cm−1. The temperature-programmed desorption (TPD) spectrum for the 673 K-deposited Pd0.3 nm/Pt(1 1 1) showed that a desorption signal for the adsorbed CO on the Pt sites decreased in intensity and shifted ca. 20 K to a lower temperature than those for the clean Pt(1 1 1). We discuss the CO adsorption behavior on well-defined Pd-deposited Pt(1 1 1) bimetallic surfaces.  相似文献   

2.
We investigated carbon monoxide (CO) adsorption and desorption behaviors on 0.1-nm-, 0.15-nm-, and 0.3-nm-thick-Pd-deposited Cu(1 1 0) surfaces using infrared reflection absorption (IRRAS) and temperature-programmed desorption (TPD) spectroscopic methods. CO was exposed to the 0.1-nm-thick-Pd/Cu(1 1 0) surface at the substrate temperature of 90 K. The IR band attributable to CO bonded to Cu atoms emerged at 2092 cm−1: the band was located at 2100 cm−1 at saturation coverage, with a shoulder at 2110 cm−1. In addition to these bands, weak absorptions attributable to the PdCO bonds appeared at 2050 and 1960 cm−1. With increasing Pd thickness, the Pd related-bands became increasingly prominent. Particularly at the early stage of exposure, the band at 2115 cm−1 became visible. The band at 2117 cm−1 dominated the spectra all through the exposures for the 0.3-nm-thick-Pd surface. The TPD spectra of the surfaces showed two remarkable features at around 220-250 and 320-390 K, ascribable ,respectively, to CuCO and PdCO. The desorption peaks shifted to higher temperatures with increasing Pd thickness. Based on the TPD and IRRAS results, we discuss the adsorption-desorption behaviors of CO on the Pd/Cu(1 1 0) surfaces.  相似文献   

3.
Using infrared reflection absorption spectroscopy (IRRAS) and temperature programmed desorption (TPD), we investigated carbon monoxide (CO) adsorption and desorption behaviors on atomic checkerboard structures of Cu and Pd formed by Pd vacuum deposition at various temperatures of Cu(1 0 0). The 0.15-nm-thick Pd deposition onto a clean Cu(1 0 0) surface at room temperature (RT) showed a clear c(2 × 2) low-energy electron diffraction (LEED) pattern, i.e. Cu(1 0 0)-c(2 × 2)-Pd. The RT-CO exposure to the c(2 × 2) surfaces resulted in IRRAS absorption caused by CO adsorbed on the on-top sites of Pd. The LEED patterns of the Pd-deposited Cu(1 0 0) at higher substrate temperatures revealed less-contrasted c(2 × 2) patterns. The IRRAS intensities of the linearly bonded CO bands on 373-K-, 473-K-, and 673-K-deposited c(2 × 2) surfaces are, respectively, 25%, 22%, and 10% less intense than those on the RT-deposited surface, indicating that Pd coverages at the outermost c(2 × 2) surfaces decrease with increasing deposition temperature. In the initial stage of the 90-K-CO exposure to the RT surface, the band attributable to CO bonded to the Pd emerged at 2067 cm−1 and shifted to higher frequencies with increasing CO exposure. At saturation coverage, the band was located at 2093 cm−1. In contrast, two distinct bands around 2090 cm−1 were apparent on the spectrum of the 473-K-deposited surface: the CO saturation spectrum was dominated by an apparent single absorption at 2090 cm−1 for the 673-K-deposited surface. The TPD spectra of the surfaces showed peaks at around 200 and 300 K, which were ascribable respectively to Cu-CO and Pd-CO. Taking into account the TPD and IRRAS results, we discuss the adsorption-desorption behaviors of CO on the ordered checkerboard structures.  相似文献   

4.
Infrared reflection absorption spectroscopy (IRRAS) was used to investigate carbon monoxide (CO) adsorption on Pt(1 0 0) surfaces deposited with Co layers with different thicknesses. Pt(1 0 0) surfaces cleaned in ultrahigh vacuum showed surface reconstruction, i.e., Pt(1 0 0)-hex: two absorption bands ascribable to adsorbed CO on the 1 × 1 surface and hex domains emerge at 2086 and 2074 cm−1, respectively, after 1.0 L CO exposure. Deposition of a 0.3-nm-thick-Co layer on Pt(1 0 0)-hex at 333 K changes the low-energy electron diffraction (LEED) pattern from hex to p(1 × 1), indicating that the deposited Co lifts the reconstruction. The IRRAS spectrum for 1.0-L-CO-exposed Co0.3 nm/Pt(1 0 0)-hex fabricated at 333 K yields a single absorption band at 2059 cm−1. For Co0.3 nm/Pt(1 0 0)-hex fabricated at 693 K, the LEED pattern shows a less-contrasted hex and the pattern remains nearly unchanged even after CO exposure of 11 L, although only 1.0 L CO exposure to Pt(1 0 0)-hex lifts the surface reconstruction. A Co0.3 nm/Pt(1 0 0)-hex surface fabricated at 753 K exhibits an absorption band at 2077 cm−1, which is considered to originate from CO adsorbed on the Pt-enriched surface alloy. Co0.3 nm/Pt(1 0 0)-hex surfaces fabricated above 773 K show a clear hex-reconstructed LEED pattern, and the frequencies of the adsorbed CO bands are comparable to those of Pt(1 0 0)-hex, indicating that the deposited Co atoms are diffused near the surface region. The outermost surface of the 3.0-nm-thick-Co-deposited Pt(1 0 0)-hex is composed of Pt-Co alloy domains even at a deposition temperature of 873 K. Based on the LEED and IRRAS results, the outermost surface structures of Cox/Pt(1 0 0)-hex are discussed.  相似文献   

5.
Yunsheng Ma 《Surface science》2009,603(7):1046-1391
The formation, stability and CO adsorption properties of PdAg/Pd(1 1 1) surface alloys were investigated by X-ray photoelectron spectroscopy (XPS) and by adsorption of CO probe molecules, which was characterized by temperature-programmed desorption (TPD) and high resolution electron energy loss spectroscopy (HREELS). The PdAg/Pd(1 1 1) surface alloys were prepared by annealing (partly) Ag film covered Pd(1 1 1) surfaces, where the Ag films were deposited at room temperature. Surface alloy formation leads to a modification of the electronic properties, evidenced by core-level shifts (CLSs) of both the Pd(3d) and Ag(3d) signal, with the extent of the CLSs depending on both initial Ag coverage and annealing temperature. The role of Ag pre-coverage and annealing temperature on surface alloy formation is elucidated. For a monolayer Ag covered Pd(1 1 1) surface, surface alloy formation starts at ∼450 K, and the resulting surface alloy is stable upon annealing at temperatures between 600 and 800 K. CO TPD and HREELS measurements demonstrate that at 120 K CO is exclusively adsorbed on Pd surface atoms/Pd sites of the bimetallic surfaces, and that the CO adsorption behavior is dominated by geometric ensemble effects, with adsorption on threefold hollow Pd3 sites being more stable than on Pd2 bridge sites and finally Pd1 a-top sites.  相似文献   

6.
E.L. Wilson  G. Thornton 《Surface science》2006,600(12):2555-2561
Reflection absorption infrared spectroscopy (RAIRS) has been used to investigate the adsorption of CO on CeO2−x-supported Pd nanoparticles at room temperature. The results show that when CeO2−x is initially grown on Pt(1 1 1), a small proportion of the surface remains as bare Pt sites. However, when Pd is deposited onto CeO2−x/Pt(1 1 1), most of the Pd grows directly on top of the CeO2−x(1 1 1). RAIR spectra of CO adsorption on 1 ML Pd/CeO2−x/Pt(1 1 1) show a broad CO-Pd band, which is inconsistent with a single crystal Pd surface. However, the 5 ML and 10 ML Pd/CeO2−x/Pt(1 1 1) spectra show vibrational bands consistent with the presence of Pd(1 1 1) and (1 0 0) faces, suggesting the growth of Pd nanostructures with well defined facets.  相似文献   

7.
Adsorption of carbon monoxide on Pd(3 1 1) and (2 1 1) stepped surfaces has been investigated by the extended London-Eyring-Polyani-Sato (LEPS) method constructed using a 5-parameter Morse potential. The calculated results show that there exist common characteristics of CO adsorption on the two surfaces. At low coverage, CO occupies threefold hollow site of the (1 1 1) terrace and is tilted with respect to the surface normal. Among the threefold hollow sites on the (1 1 1) terrace, the nearer the site is to the step, the greater is the influence of the step. The twofold bridge site on the (1 0 0) step is also a stable adsorption site at high coverage. Because of the different lengths of the (1 1 1) terraces, the (3 1 1) and (2 1 1) stepped surfaces have different characteristics. A number of new sites are exposed on the boundary regions, including the fourfold hollow site (H4) of the (3 1 1) surface and the fivefold hollow site (H5) of the (2 1 1) surface. At high coverage, CO resides in the H5 site of the (2 1 1) surface, but the H4 site of the (3 1 1) surface is not a stable adsorption site. This study further shows that the on-top site on the (1 0 0) step of Pd(3 1 1) is a stable adsorption site, but the same type of site on Pd(2 1 1) is not.  相似文献   

8.
Electronic and magnetic properties of the zincblende CrSb(0 0 1) surfaces and its interfaces with GaSb(0 0 1) and InAs(0 0 1) semiconductors are studied within the framework of the density-functional theory using the FPLAPW+lo approach. We found that the Cr-terminated surfaces retain the half-metallic character, while the half-metallicity is destroyed for the Sb-terminated surfaces due to surface states, which originate from p electrons. The phase diagram obtained through the ab-initio atomistic thermodynamics shows that at phase transition has occurred. Also the half-metallicity character is preserved at both CrSb/GaSb and CrSb/InAs interfaces. The conduction band minimum (CBM) of CrSb in the minority spin case lies about 0.63 eV above that of InAs, suggesting that the majority spin can be injected into InAs without being flipped to the conduction bands of the minority spin. On the other hand the CrSb/GaSb interface has a greater valence band offset (VBO) compared with the CrSb/InAs interface and the minority electrons have lower contribution in the injected currents and hence more efficient spin injection into the GaSb semiconductor. Thus the CrSb/GaSb and CrSb/InAs heterojunctions can be useful in the field of spintronics.  相似文献   

9.
P. Hanyš 《Surface science》2007,601(18):3717-3721
An ultra thin Sn layer (6 Å) was deposited onto Rh(1 1 1) single crystal surface. We followed changes in low energy electron diffraction (LEED) pattern during progressive annealing together with development of CO adsorption capacity and photoelectron spectra obtained using synchrotron radiation. Surface bimetallic alloy development with increasing temperature was followed by LEED and synchrotron radiation photoelectron spectroscopy (SRPES). LEED results show several surface structure of Sn/Rh(1 1 1) sample in dependence on sample temperature. If it increases, the surface structure develops to the stable ordered (√3 × √3)R30° structure. Surface CO adsorption depends strongly on the amount of Sn in the top sample layer then it corresponds to the development of the surface structure. The CO adsorption capacity raises with increasing temperature.Photoelectron spectra of Sn and Rh core levels and their shifts and shapes were studied during the annealing and CO adsorption. The resulting spectra are used to discuss the Sn-Rh surface alloy creation.The goal of this paper is to demonstrate the CO adsorption on the Sn/Rh(1 1 1) surface. Valence band spectra measured at different primary energies are presented to demonstrate this effect. These spectra show different adsorption properties of the studied system in dependence on the amount of Sn in the top layer and geometric structure of the surface.  相似文献   

10.
We have investigated the electronic structure of the Yb/Si(1 1 1)-(3 × 2) surface using angle-resolved photoelectron spectroscopy. Five surface states have been identified in the gap of the bulk band projection. Among these five surface state, the dispersions of three of them agree well with those of the surface states of monovalent atom adsorbed Si(1 1 1)-(3 × 1) surfaces. The dispersions of the two other surface states agree well with those observed on the Ca/Si(1 1 1)-(3 × 2) surface, whose basic structure is the same as that of monovalent atom adsorbed Si(1 1 1)-(3 × 1) surfaces. Taking these results into account, we conclude that the five surface states observed in the band gap originate from the orbitals of Si atoms that form a honeycomb-chain-channel structure.  相似文献   

11.
In this work, we report density functional theory calculations exploring H2S dissociation on the (1 1 1) surfaces of Pd, Cu, Ag, Au, and various bimetallic surfaces consisting of those metals. To understand the contributions of lattice strain and electronic ligand effects, the thermodynamics of each elementary dissociation step were explored on model bimetallic surfaces, including PdMPd sandwiches and Pd pseudomorphic overlayers, as well as strained Pd(1 1 1) surfaces and homogeneous Pd3M alloys. Sulfuric (H2S, SH, and S) adsorption energies were found to correlate very well with lattice constant, which can be explained by the strong correlation of the lattice constant with d-band center, Fermi energy, and density of states at the Fermi level for strained Pd(1 1 1) surfaces. Compressing the Pd lattice shifts the d-band center away from the Fermi level, lowers the Fermi energy, and reduces the density of d-states at the Fermi level. All three effects likely contribute to the destabilization of sulfuric adsorption on Pd alloys. Introducing ligand effects was found to alter the distribution of the d-states and shift the Fermi level, which eliminates the correlation of the d-band center with the density of states at the Fermi level and the Fermi energy. As a result, the d-band center by itself is a poor metric of the H2S reaction energetics for bimetallic surfaces. Furthermore, combining strain with ligand effects was found to lead to unpredictable alterations of the d-band. Therefore, adsorption of H2S, SH, and S on PdMPd surfaces do not accurately predict adsorption on Pd3M surfaces.  相似文献   

12.
Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd2Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 °C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd2Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed.  相似文献   

13.
In this study, InP(1 0 0) surfaces were bombarded by argon ions in ultra high vacuum. Indium metallic droplets were created in well controlled quantities and played the role of precursors for the nitridation process. A glow discharge cell was used to produce a continuous plasma with a majority of N atomic species. X-ray photoelectron spectroscopy (XPS) studies indicated that the nitrogen combined with indium surface atoms to create InN thin films (two monolayers) on an In rich-InP(1 0 0) surface. This process occurred at low temperature: 250 °C. Synchrotron radiation photoemission (SR-XPS) studies of the valence band spectra, LEED and EELS measurements show an evolution of surface species and the effect of a 450 °C annealing of the InN/InP structures. The results reveal that annealing allows the crystallization of the thin InN layers, while the LEED pattern shows a (4 × 1) reconstruction. As a consequence, InN related structures in EELS and valence bands spectra are different before and after the annealing. According to SR-XPS measurements, the Fermi level is found to be pinned at 1.6 eV above the valence band maximum (VBM).  相似文献   

14.
The structure of the Co thin films on Pd(1 1 1) and the effect of the CO adsorption on Co thin films were studied by Co K-edge surface X-ray absorption fine structure (XAFS). The polarization dependences of the X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) spectra indicate that Co thin films grow in the fcc stacking mode on Pd(1 1 1) up to 12 ML. The analysis of the nearest neighbor shell shows little mechanical strain at the interface, indicating that Co atom does not grow pseudomorphically on Pd(1 1 1). There is no alloy-like structure at the interface. CO adsorption causes no structural change of the Co thin films but modifies the Co surface electronic state. These structural studies provide deep insight in the magnetic property of the Co thin films on Pd(1 1 1).  相似文献   

15.
We propose a dry method of cleaning Ge(1 0 0) surfaces based on nitrogen plasma treatment. Our in situ Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED) analyses demonstrate that surface contamination remaining after wet treatment was effectively removed by nitrogen radical irradiation at low substrate temperatures. The nitrogen plasma cleaned Ge(1 0 0) surface shows a well-ordered 2 × 1 reconstruction, which indicates the formation of a contamination-free Ge(1 0 0) surface with good crystallinity. We discuss the possible reaction mechanism considering how chemisorbed carbon impurities are removed by selective C-N bond formation and subsequent thermal desorption. These findings imply the advantage of plasma nitridation of Ge surfaces for fabricating nitride gate dielectrics, in which we can expect surface pre-cleaning at the initial stage of the plasma treatment.  相似文献   

16.
The adsorption of CO on Pt(1 1 1), (2 × 2) and (√3 × √3)R30° Sn/Pt(1 1 1) surface alloys has been studied using temperature programmed desorption (TPD), low energy electron diffraction (LEED) and infrared reflection adsorption spectroscopy (IRAS). The presence of Sn in the surface layer of Pt(1 1 1) reduces the binding energy of CO by a few kcal/mol. IRAS data show two C-O stretching frequencies, ∼2100 and ∼1860 cm−1, corresponding to atop and bridge bonded species, respectively. Bridge bonded stretching frequencies are only observed for Pt(1 1 1) and (2 × 2) Sn/Pt(1 1 1) alloy surfaces. A slight coverage dependence of the vibrational frequencies is observed for the three surfaces. High pressure IRAS experiments over a broad temperature range show no indication of bridge bonded CO on any of the three surfaces. Direct CO adsorption on Sn sites is not observed over the measured temperature and pressure ranges.  相似文献   

17.
The adsorption and decomposition of NO on a K-deposited Pd(1 1 1) surface were investigated using X-ray photoelectron spectroscopy, infrared reflection absorption spectroscopy, and temperature-programmed desorption. For the K-deposited Pd(1 1 1) surface, two different NO adsorption sites were observed in addition to the Pd site. On the clean Pd(1 1 1) surface, the adsorption of NO was purely molecular and reversible, but on the K-deposited surface, the adsorbed NO decomposed at two different temperatures, 530 and 610 K. These results indicate that the NO adsorption and decomposition sites were newly created by the deposition of K onto the Pd(1 1 1) surface.  相似文献   

18.
Adsorption of methanol on clean Pd(1 1 0) and on an alloyed Ag/Pd(1 1 0) surface has been studied by high-resolution photoelectron spectroscopy. On Pd(1 1 0) two different chemisorbed methanol species were observed for temperatures up to 200 K, with the one at lower binding energy remaining at low coverage. These species were attributed to methanol adsorbed in two different adsorption sites on the Pd(1 1 0) surface. As is well established for this system, heating to 250 K resulted in decomposition of methanol into CO. The adsorption and decomposition behaviour of methanol on the Ag/Pd(1 1 0) surface alloy formed by depositing Ag on Pd(1 1 0) at elevated temperature was similar to that of the pure Pd(1 1 0) surface. This suggests that the amount of Ag present in the Pd(1 1 0) surface in this study does not affect the decomposition behaviour of methanol as compared to pure Pd(1 1 0). Complementary density functional theory calculations also show little influence of Ag on the binding of methanol to Pd. These calculations predict an on-top adsorption site for low methanol coverages.  相似文献   

19.
The DOS structures of NiO (0 0 1;1 1 1) surfaces and CO adsorption on these surfaces have been studied with spin-unrestricted and periodic DFT (B3LYP) methods. On the basis of the analysis of orbital interaction on DOSs, the bonding properties of surface atomic orbitals have also been interpreted. It is found that CO adsorption on (0 0 1) and (1 1 1) surfaces have different mechanisms and adsorption energies. A four-electron σ orbital interaction is produced when CO is adsorbed on NiO (1 1 1), CO adsorbption on NiO (1 1 1) surface is obviously stronger than that on surface (0 0 1). It is easy for the clean NiO (1 1 1) surface to reconstruct to (2 × 2) structure, but the surface covered by CO does not undergo such a reconstruction.  相似文献   

20.
Electronic and geometric properties of the adsorbate-substrate complex formed upon adsorption of methyl oxirane on Si(1 0 0)2 × 1 at room temperature is reported, obtained with synchrotron radiation-induced valence and core-level photoemission. A ring-opening reaction is demonstrated to occur, followed by a five-membered ring formation involving two of the Si surface atoms bound to a surface dimer. Core-level photoemission spectra support the ring-opening reaction and the SiO and SiC bond formation, while from the valence spectra a more extended molecular fragmentation can be ruled out. We discuss the most likely geometry of the five-membered ring.  相似文献   

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