Spectroscopic ellipsometry of very thin tantalum pentoxide on Si

Variable angle spectroscopic ellipsometry of very thin T₂O₅ layers on Si and the previously published appropriate algorithm for data interpretation have been successfully applied in terms of accurate characterization of very thin T₂O₅/Si systems. The simulation procedure following a simple three and four layered model was used assuming an existence of inhomogeneous interfacial layers. Quantitative determination of the thicknesses and composition identification were achieved, both for the top T₂O₅ layer and for an interfacial layer. The constituents in the interfacial layer and its depth profiles were recognized.     

Thermally tunable optical constants of vanadium dioxide thin films measured by spectroscopic ellipsometry

Smart materials with reversible tunable optical constants from visible to near-infrared wavelengths could enable excellent control over the resonant response in metamaterials, tunable plasmonic nanostructures, optical memory based on phase transition and thermally tunable optical devices. Vanadium dioxide (VO₂) is a promising candidate that exhibits a dramatic change in its complex refraction index or complex dielectric function arising from a structural phase transition from semiconductor to metal at a critical temperature of 70 °C. We demonstrated the thermal controllable reversible tunability of optical constants of VO₂ thin films. The optical/dielectric constants showed an abrupt thermal hysteresis which confirms clearly the electronic structural changes. Temperature dependence of dielectric constants as well as optical conductivity of sputtered VO₂ thin films was also reported and compared to previous theoretical and experimental reports.     

FTIR and spectroscopic ellipsometry investigations of the electron beam evaporated silicon oxynitride thin films

FTIR and variable angle spectroscopic ellipsometer in conjunction with computer simulation were employed to investigate the electron beam evaporated SiO_xN_y thin films. FTIR showed a large absorption band located between 600 and 1250 cm⁻¹, which indicates that Si-O and Si-N bands are overlap in SiO_xN_y films. A three layers model was used to fit the calculated data to the experimental ellipsometric spectra. The main layer was described by Cauchy model while the interface layer and the surface layer were described using Tauc-Lorenz oscillator and Bruggeman effective medium approximation, respectively. The thickness, the refractive index and the extinction coefficient were accurately determined. The refractive index at 630 nm was found to increase from 1.74 to 1.85 with increasing the film thickness from 191.6 to 502.2 nm. The absorption coefficient was calculated from the obtained extinction coefficient values and it has been used to calculate the Tauc and Urbach energies.     

Observation of strong light-matter coupling by spectroscopic ellipsometry

We report on the observation of strong coupling between excitons and cavity photons in a ZnO-based microresonator up to room temperature. The ZnO-based resonator was grown by means of pulsed laser deposition (PLD) on c-sapphire substrate and consists of a half-wavelength ZnO-cavity between two Bragg reflectors, each made of 10.5 layer pairs of yttria stabilized zirconia and Al₂O₃. Angle-resolved spectroscopic ellipsometry revealed the resonator to be in the strong coupling regime at room temperature. This was confirmed for temperatures between 10 K and 290 K by means of angle-resolved photoluminescence and reflection experiments. Prior studies on a Fabry–Perot resonator containing a half-wavelength YSZ-cavity (empty resonator) demonstrate the ability of ellipsometry to gain comprehensive information on mode-structure properties of resonators without coupling effects.     

椭偏光谱法研究溶胶-凝胶TiO2薄膜的光学常数

以钛酸丁酯为前驱体,采用溶胶-凝胶工艺成功制备了TiO₂薄膜.利用反射式椭圆偏振光谱仪测量了薄膜的椭偏参量Ψ和Δ,并用Cauchy模型对椭偏参数进行数据拟合,得到了薄膜的厚度和光学常数在380—800 nm的色散关系.用分光光度计测量了薄膜的反射率,并用干涉法计算薄膜的厚度;使用原子力显微镜观测了薄膜的表面微结构,分析讨论了不同退火温度处理的薄膜微结构与光学常数之间的关系.研究结果表明,Cauchy模型能较好地符合溶胶-凝胶TiO₂薄 关键词： 光学常数 2薄膜')" href="#">TiO₂薄膜 溶胶-凝胶 椭圆偏振     

Investigation of the optical anisotropy of PET and PEN films by VIS-FUV to IR spectroscopic ellipsometry

In the last years, a significant amount of research is being performed in the field of polymer research for novel applications, such as flexible electronic devices, photovoltaic cells, high performance optics, data storage, etc. Toward this direction, in this work, the optical anisotropy of biaxially stretched poly(ethylene terephthalate) (PET) and poly(ethylene naphthalate) (PEN) films has been extensively investigated. The optical properties of the films have been studied in terms of their optical, electronic and vibrational response, by Fourier transform IR spectroscopic ellipsometry (FTIRSE) (900-3500 cm⁻¹) and Vis-fUV variable angle SE (1.5-6.5 eV) techniques. The films optical anisotropy is the result of the stretching procedure during their fabrication, which results to the structural rearrangement of the macromolecular chains parallel to the stretching direction and to a higher structural symmetry. During the SE spectra analysis, the films have been approximated as uniaxial materials with their optic axis parallel to the sample/ambient interface leading to the accurate determination of the principal components ?_||(ω) and ?_⊥(ω) of the dielectric function ?(ω). The detailed study of the electronic transitions has been performed in the Vis-fUV region, where the characteristic features corresponding to the n → π* electronic transitions of the carbonyl -CO group and the ¹A_1g → ¹B_1u transition due to the π → π* excitation of the π-electron structures have been identified and analysed. Furthermore, the FTIRSE spectra allowed the accurate identification and assignment of the features of ?(ω) to the vibrational modes of the various bonding structures characteristic of the PET and PEN macromolecular chains.     

Spetroscopic ellipsometry study on electrical and elemental properties of Sb-doped ZnO thin films

Room-temperature spectroscopic ellipsometry data has been analyzed to determine the complex dielectric functions, ɛ(E) = ɛ₁(E) + iɛ₂(E) of as-deposited Sb-doped ZnO (SZO) thin films grown on n-Si(100) substrates by dual ion beam sputtering deposition system for different growth temperatures (T_g). The dielectric functions have been obtained from ellipsometry data analyses using Cody-Lorentz oscillator in the GenOsc model. A gradual reduction in the value of electron concentration and finally the conversion of doping characteristics from donor type to acceptor type was observed with the rise in T_g. This, in turn, resulted in the decline of broadening of ɛ₁ peaks, and hence in the increase of excitonic lifetime. Optical band-gap energy was observed to decrease with increase in T_g from 200 to 300 °C, and then rise continuously with further increase in T_g. X-ray diffraction measurements showed that all SZO films had (002) preferred crystal orientation. Hall measurement and X-ray photoelectron spectroscopy analysis confirmed that the change in the electrical conduction from n-to p-type was due to the enhancement in the value of Sb⁵⁺/Sb³⁺ ratio and Sb_Zn–2V_Zn complex formation in SZO films.     

Optical arrangement and proof of concept prototype for mid infrared variable angle spectroscopic ellipsometry

We present an optical setup for variable angle mid infra red spectroscopic ellipsometry. The arrangement can be placed into the sample compartment of a Bruker ifs66v/s vacuum Fourier transform infrared spectrometer. A first prototype of the setup has been tested in the spectral range from 650 cm⁻¹ to 4000 cm⁻¹ and can measure incidence angles between 8° and 87°. We compare the measured data to reference measurements with a commercial variable angle infrared spectroscopic ellipsometer. The comparison gives a proof of concept for the discussed optical arrangement.     

Nanostructure characterization of high k materials by spectroscopic ellipsometry

In this work, the optical and structural properties of high k materials such as tantalum oxide and titanium oxide were studied by spectroscopic ellipsometry, where a Tauc-Lorentz dispersion model based in one (amorphous films) or two oscillators (microcrystalline films) was used. The samples were deposited at room temperature by radio frequency magnetron sputtering and then annealed at temperatures from 100 to 500 °C. Concerning the tantalum oxide films, the increase of the annealing temperature, up to 500 °C does not change the amorphous nature of the films, increasing, however, their density. The same does not happen with the titanium oxide films that are microcrystalline, even when deposited at room temperature. Data concerning the use of a four-layer model based on one and two Tauc-Lorentz dispersions is also discussed, emphasizing its use for the detection of an amorphous incubation layer, normally present on microcrystalline films grown by sputtering.     

ZnSe/SiO2复合薄膜光学常数与荧光光谱的研究

采用溶胶-凝胶工艺与原位生长技术，制备了ZnSe/SiO₂复合薄膜.X射线衍射分 析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1 ∶1.01—1∶1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌，结果表明复合薄 膜表面既存在尺寸约为400nm的ZnSe晶粒，也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测 量了薄膜椭偏角Ψ，Δ与波长λ的关系，采用Maxwell-Garnett有效介质理论对薄膜的光学 常数、厚度、气孔率、ZnS 关键词： 2复合薄膜')" href="#">ZnSe/SiO₂复合薄膜 光学性质 椭偏光度法 荧光光谱     

Characterization of DC reactive magnetron sputtered NiO films using spectroscopic ellipsometry

Thin NiO films were deposited at 500 °C on n-type Si(1 1 1) by a DC reactive magnetron sputtering in a gas mixture of oxygen and argon. The ratio between the flow rates of oxygen and argon was respectively set at 1:4, 1:2, and 1:1. The dependence of structures and optical properties of NiO films were investigated using grazing incidence X-ray diffraction and spectroscopic ellipsometry in the spectral region of 1.5-5.0 eV. Ni-rich NiO films were obtained when the ratio between the flow rates of oxygen and argon was 1:4 and 1:2 in sputtering process. And when the ratio was 1:1, a relatively pure NiO film was formed. The partial pressure of oxygen could significantly influence the thickness and roughness of films. Refractive index n, extinction coefficient k, and direct gap energy and indirect gap energy of the NiO films were also subject to the influence of the partial pressure of oxygen.     

Characterization of wafer-scale MoS2 and WSe2 2D films by spectroscopic ellipsometry

Here, we present the spectroscopic ellipsometry investigation of synthetically grown wafer-scale two-dimensional (2D) MoS₂ and WSe₂ films to access quality and thickness uniformity. MoS₂ and WSe₂ samples were grown by chemical vapor deposition and atomic layer deposition, respectively. Complex dielectric function ($\epsilon ={\epsilon }_1+i{\epsilon }_2$) and thickness information of these 2D films were extracted from the measured data using multilayer optical calculations. Broad spectral range (1.2–6 eV) and multiple angles of incidence were used to reduce correlations among fitting parameter. Lineshape of ε of MoS₂ and WSe₂ monolayer films are consistent with literature but shows higher values, suggests better quality of our samples. Eight-inch wafer size MoS₂ monolayer sample shows ～ 70% uniformity with an average thickness of 0.65 ± 0.2 nm, and three-layer WSe₂ sample of 8 × 1 cm² area shows ～ 80% uniformity with an average thickness of 2.5 ± 0.4 nm. Our results will be helpful to accelerate commercialization process of 2D devices.     

掺纳米锗氧化硅的发光性能研究

由溶胶/凝胶法制备得到的GeO₂/SiO₂玻璃在700 ℃的条件下经H₂还原,得到具有奇特光致发光性质的Ge/SiO₂玻璃,该玻璃在室温条件下用246 nm（5.01 eV）的光激发时,能发射出很强的 392 nm（3.12 eV）、较强的 600 nm（2.05 eV）和次强的770 nm（1.60 eV） 的荧光.利用X射线衍射（XRD）、X射线光电子能谱（XPS）及透射电镜（TEM）实验证明,该玻璃能够发射3种不 关键词： 2')" href="#">Ge/SiO₂ Ge纳米晶粒 溶胶/凝胶法 光致发光     

金刚石薄膜的红外椭圆偏振光谱研究

采用红外椭圆偏振光谱对微波等离子体化学气相沉积法（MPCVD）和热丝化学气相沉积法（H-FCVD）制备的金刚石薄膜在红外波长范围（2.5—12.5μm）的光学参数进行了测量.建立了不同的光学模型，且在模型中采用Bruggeman有效介质近似方法综合考虑了薄膜表面和界面的椭偏效应.结果表明，MPCVD金刚石膜的椭偏数据在模型引入了厚度为77.5nm的硅表面氧化层、HFCVD金刚石膜引入879nm粗糙层之后能得到很好的拟合.最后对两种模型下金刚石薄膜的折射率和消光系数进行了计算，表明MPCVD金刚石薄膜的红外 关键词： 金刚石薄膜 红外椭圆偏振光谱 光学参数 有效介质近似     

Influence of ligand coordination of cobalt ions on structural properties of ZnO-ZnF2-B2O3 glass system by means of spectroscopic studies

The glasses of the composition 10ZnO-30ZnF₂-60B₂O₃ doped with different concentrations of CoO were prepared. Differential scanning calorimetric (DSC) studies, optical absorption, photoluminescence and infrared spectra of these glasses have been carried out. DSC studies have indicated that the resistance of the glass against devitrification increases with the increase in the concentration of CoO. Optical absorption spectra have exhibited one octahedral band due to ⁴T_1g(F)→²T_1g(H) and two tetrahedral bands due to ⁴A₂(⁴F)→⁴T₁(⁴P) ⁴A₂(⁴F)→⁴T₁(⁴F) transitions of Co²⁺ ions at about 525, 570 and 1400 nm, respectively. As the concentration of CoO is increased the tetrahedral bands are observed to grow at the expense of octahedral band. The luminescence spectra have exhibited two emission bands in the spectral regions of 600-700 nm and 800-900 nm due to ⁴T₁(⁴P)→⁴A₂(⁴F) and ⁴T₁(⁴P)→⁴T₂(⁴F) tetrahedral transitions of Co²⁺ ions, respectively. With the increasing content of cobalt ions in the glass matrix, the half width and intensity of these bands are observed to increase. The analysis of the results of these two spectra coupled with IR spectra has indicated that as the concentration of CoO is increased in the glass matrix, the tetrahedral occupancy of cobalt ions dominates over the octahedral occupancy and increase the rigidity of the glass network.     

Optical characteristics of amorphous V2O5 thin films colored by an excimer laser

The V₂O₅ films were prepared by an RF sputtering method, and the amorphous films were colored by an UV excimer laser. The crystallinity of the as-grown V₂O₅ film was degenerated greatly by laser irradiation, as determined by X-ray diffraction (XRD) and Raman studies. The transmission and complex refractive index spectra of the V₂O₅ film were affected by variations in the microstructure, including the surface morphology, crystalline structure, and substoichiometry with an oxygen deficiency. Considerable emissions due to oxygen vacancies and band transition of photoluminescence (PL) peaks were observed, and the peaks were significantly changed after laser irradiation. The variations in the optical properties in both films may be attributed to oxygen deficiency induced by laser irradiation.     

Interrelation between microstructure and optical properties of erbium-doped nanocrystalline thin films

Nanocrystalline silicon thin films codoped with erbium, oxygen and hydrogen have been deposited by co-sputtering of Er and Si. Films with different crystallinity, crystallite size and oxygen content have been obtained in order to investigate the effect of the microstructure on the photoluminescence properties. The correlation between the optical properties and microstructural parameters of the films is investigated by spectroscopic ellipsometry. PL response of the discussed structures covers both the visible wavelength range (a crystallite size-dependent photoluminescence detected for 5–6 nm sized nanocrystals embedded in a SiO matrix) and near IR range at 1.54 μm (Er-related PL dominating in the films with 1–3 nm sized Si nanocrystals embedded in a-Si:H). It is demonstrated that the different PL properties can be also discriminated on the basis of ellipsometric spectra.     

AlN:Cr thin films synthesized by pulsed laser deposition: Studies by X-ray diffraction and spectroscopic ellipsometry

The structure and optical properties of AlN thin films doped with Cr atoms were studied by X-ray diffractometry, Fourier transform infrared spectroscopy and spectroscopic ellipsometry analyses. The films were synthesized by pulsed laser deposition from an AlN:Cr (10% Cr) target onto Si(1 0 0) wafers in vacuum at residual pressure of 10⁻³ Pa or in nitrogen at a dynamic pressure of 0.1 Pa. The study of the XRD patterns revealed that both phases co-existed in the synthesized films and that the amorphous one was prevalent. Two different amorphous matrices, i.e. two types of chemical bond arrangements, were found in films deposited at 0.1 Pa N₂. By difference, deposition in vacuum resulted in the coexistence of hexagonal and cubic crystallites embedded into an amorphous matrix. The introduction of Cr atoms into the AlN lattice causes a broadening of the IR spectrum along with the shift toward higher wavenumbers of the characteristic Al-N bands at 2351 cm⁻¹ and 665 cm⁻¹, respectively. This was related to the generation of a compressive stress inside films. In comparison to the optical constants of pure AlN films, the synthesized AlN:Cr films exhibited a smaller refractive index and showed a weak absorption throughout the 300-800 nm spectral region, characteristic to amorphous AlN structure.     

Correlations between microstructure of plasma-modified gold nanoclusters and their optical properties

Gold nanoclusters with diameters up to 50 nm were grown in sandwich structures consisting in 15 nm of plasma deposited silicon nitride, 1 nm of gold grown by sputtering and 15 nm of plasma deposited silicon nitride (SiN/Au/SiN). Previous to the last step, ammonia plasma treatments of the gold surface were carried out with time as the main variable. The resulting structures were analyzed by high resolution transmission electron microscopy and spectroscopic ellipsometry. As a result of plasma treatments, island-like structures of as-grown gold clusters evolve to near spherical-shape features with decreasing diameter as the plasma treatment time rises. Ellipsometric spectra were modeled based on the Bruggeman effective medium approximation and the influence of size and shape of nanoparticles on the optical properties were calculated.